JP2008231456A - Plasma film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition system which can continuously carry out film deposition by plasma CVD and film deposition using an evaporation source without opening a film deposition space to atmospheric pressure. <P>SOLUTION: An openable and closeable shielding member 8c is arranged at an opening of a crucible 8b filled with an evaporation material 8a, and the shielding member 8c serves also as an anode of a plasma source 2. Thereby, in a plasma CVD process, since it becomes possible to shield the evaporation material 8a with the shielding member 8c serving also as the anode, sticking of a film onto the evaporation material 8a can be prevented. Further, the influence of the shielding member 8c on the discharge of plasma can be avoided by using the shielding member 8c serving also as the anode. Furthermore, an evaporation process can be carried out by opening the shielding member 8c and evaporating the evaporation material 8a. It is also possible to evaporate and remove the evaporation material sticking on the inner side of the shielding member 8c because the shielding member 8c is heated by the plasma 5a. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus using plasma, and more particularly, to a film forming apparatus capable of performing both a film forming method using a source gas and a film forming method using an evaporation source.

  As a film forming method using plasma, a chemical vapor deposition (plasma CVD) method in which a film forming raw material gas is supplied to plasma extracted from a plasma source, and decomposition products and reaction products are deposited on the substrate, or an evaporation source is used. There are known an ion plating method in which the vapor is heated by plasma and vapor is ionized for vapor deposition, a plasma assist vapor deposition method in which the vapor deposition source is heated by resistance heating and vapor deposition is performed while irradiating the vapor with plasma. For example, Patent Document 1 discloses a method of forming a water-repellent organic compound film using an organosilicon compound as a source gas by a low temperature plasma CVD method.

On the other hand, as a method for forming an organic compound film, Patent Documents 2 and 3 disclose a film forming apparatus in which an organic material serving as an evaporation source is evaporated by heating with a heater and deposited on a substrate. In the film forming apparatuses disclosed in Patent Documents 2 and 3, the shutter that covers the evaporation source is also provided with a heater. Since the evaporation rate is unstable when heating of the evaporation source is started, the shutter remains closed, and after the evaporation source vapor reaches a predetermined evaporation rate, the shutter is opened to form a film. Until the shutter is opened, vapor adheres to the shutter and becomes a deposit. Accordingly, it has been proposed to heat or collect the exhausted organic material by heating the shutter with a heater.
JP-A-11-263860 JP-A-5-132760 Japanese Patent Laid-Open No. 10-168559

  Plasma CVD using a conventional film formation apparatus, when film formation by plasma CVD and film formation using an evaporation source such as ion plating are continuously performed in the same film formation chamber without opening to the atmosphere. There arises a problem that the product (decomposition / reaction product) due to adheres to the surface of the evaporation source and contaminates the evaporation source.

  For example, a procedure for performing continuous film formation using the conventional film formation apparatus shown in FIG. 4 will be briefly described. During film formation by the plasma CVD method, the switch 11 is closed, and a voltage is applied from the power source 4 between the cathode 5 of the plasma gun 2 and the anode 10 of the film formation chamber 3. When the plasma 5a is introduced from the plasma gun 2 toward the anode 10 and the raw material gas is supplied from the gas introduction pipe 6 to the film forming chamber 3, the raw material gas is decomposed or reacted by the plasma 5a. A film 13 is formed by depositing on the substrate 12. At this time, decomposition products or reaction products adhere to the surface of the solid evaporation source 8 and contaminate the evaporation source. When the decomposition product or the reaction product is an insulator such as an organic material, the surface of the evaporation source 8 is covered with an insulating film. Thereafter, in order to perform the ion plating method, the switch 11 is opened, the switch 9 is closed, the plasma 5a is guided to the evaporation source 8, and the evaporation source 8 is heated and evaporated. However, when the evaporation source 8 is covered with an insulating film, the plasma 5a cannot be guided to the evaporation source 8 and cannot be heated by the plasma. For this reason, the ion plating method cannot be performed continuously.

  In addition, it is conceivable that the evaporation source is shielded by a shutter during ion plating, but the shutter may affect the stable discharge of plasma, and the apparatus configuration becomes complicated.

  An object of the present invention is to provide a film forming apparatus capable of continuously performing film formation by plasma CVD and film formation using an evaporation source without opening the film formation space to atmospheric pressure. .

  In order to achieve the above object, a film forming apparatus provided by the present invention includes a film forming chamber, a plasma source that generates direct current plasma, a crucible disposed in the film forming chamber and filled with an evaporation material, A gas introduction pipe for introducing a raw material gas into the film chamber is provided, and an openable / closable shielding member is disposed at the opening of the crucible, and the shielding member also serves as an anode of the plasma source. As a result, in the plasma CVD process, the evaporation material can be shielded by the shielding member that also serves as the anode, so that the film does not adhere to the evaporation material. Further, by using the shielding member as an anode, the shielding member does not affect plasma discharge. Moreover, an ion plating process and a vapor deposition process can be performed only by opening a shielding member. Furthermore, since the shielding member is heated with plasma, it is possible to evaporate and remove the evaporate adhering to the inside of the shielding member.

  Switching means for selectively applying the anode potential of the plasma source can be connected to one of the shielding member and the crucible. Thereby, a plasma CVD process and an ion plating process can be performed continuously.

  For example, the film forming apparatus can be configured to include a drive mechanism for opening and closing the shielding member, and a control unit for controlling operations of the drive mechanism and the switching unit. The control unit closes the shielding member by the driving mechanism, applies an anode potential to the shielding member by the switching means, and directs the direct current plasma of the plasma source to the shielding member, thereby exposing the source gas to the direct current plasma and plasma chemistry. After the film formation by the vapor phase growth method, the shielding member is continuously opened by the driving mechanism, the anode potential is applied to the crucible by the switching means, and the direct current plasma is guided to the evaporation material. Can be evaporated to form a film.

  The shielding member may be connected to a potential applying means for applying the anode potential of the plasma source, and the crucible may be provided with a heating means for heating the evaporation material. Thereby, a plasma CVD process and a vapor deposition process can be performed continuously.

  For example, the film forming apparatus can be configured to include a drive mechanism for opening and closing the shielding member, and a control unit for controlling operations of the drive mechanism, the potential applying unit, and the heating unit. The control unit closes the shielding member by the driving mechanism, applies an anode potential to the shielding member by the potential applying means, and directs the direct current plasma of the plasma source to the shielding member, thereby exposing the source gas to the direct current plasma and plasma. After film formation by the chemical vapor deposition method, the crucible is heated by the heating means to evaporate the evaporation material, the shielding member is opened by the driving mechanism, and the film formation by the vapor deposition method is performed. it can.

  In this case, the controller can heat the shielding member by directing direct current plasma to the shielding member by continuing to apply the anode potential to the shielding member even after the film formation by the plasma chemical vapor deposition method. Thereby, the deposit | attachment by the vapor | steam of the evaporation material adhering to a shielding member can be removed.

  In the present invention, the film formation of the insulating film by plasma CVD and the film formation using the evaporation source can be continuously performed without opening the film formation space to the atmospheric pressure. And throughput can be improved. In addition, since the film interface does not come into contact with the air, a laminated film with high adhesion and high durability can be obtained.

  A DC discharge plasma film forming apparatus according to an embodiment of the present invention will be described with reference to the drawings.

(First embodiment)
First, the configuration of the DC discharge plasma film forming apparatus of the first embodiment will be described with reference to FIGS. This film forming apparatus can continuously perform film formation by the plasma CVD method and film formation by the ion plating method.

  As shown in FIG. 1, the film forming apparatus includes a plasma gun 2 and a film forming chamber 3 connected to the plasma gun 2. Inside the plasma gun 2, a known composite cathode structure cathode 5 suitable for shifting from glow discharge to arc discharge (DC discharge type plasma 5a) is disposed. The negative electrode of the power supply 4 is connected to the cathode 5. The plasma gun 2 is provided with a discharge gas inlet 21 for introducing the discharge gas 1.

  In the film formation chamber 3, a substrate holder 22 for holding the substrate 12 and an evaporation crucible 8b filled with the evaporation material 8a are arranged. The evaporation crucible 8 b is made of a conductive material and is electrically connected to the positive electrode of the power supply 4 via the switch 9. A control unit 30 is connected to the switch 9, and the control unit 30 closes the switch 9, whereby an anode potential is applied to the crucible 8b. Thereby, the crucible 8b acts as an anode, and when the evaporation material 8a is conductive, the plasma 5a is guided to the evaporation material 8a and ion plating can be performed.

  The opening of the evaporation crucible 8b is covered with a plate-like and conductive shielding member 8c so as to be opened and closed. Since the shielding member 8c is heated to a high temperature by the plasma 5a, the shielding member 8c is formed of carbon or a high melting point metal such as lanthanum boride, Ta, or W.

  The crucible 8b and the shielding member 8c are provided with a drive mechanism 23 for opening and closing the shielding member 8c. The drive mechanism unit 23 opens and closes the shielding member 8 c in accordance with instructions from the control unit 30. As the drive mechanism unit 23, for example, a rack and a pinion structure drive mechanism that opens and closes the shielding member 8c by installing a rack on the back surface of the shielding member 8c, attaching a pinion to the evaporation crucible 8b, and rotating the pinion by a motor. Can be used. Alternatively, the shield member 8c is provided with a ridge, a groove is provided at the edge of the crucible 8b, and a wire connected to the shield member 8c is wound with a pulley rotated by a motor to slide the shield member 8c along the groove. It is also possible to use the drive mechanism. In any mechanism, the motor is driven in accordance with an instruction from the control unit 30. However, since the shielding member 8c is heated to a high temperature by the plasma 5a, the motor is arranged at a position away from the shielding member 8c and the crucible 8b, or a rotating shaft with low thermal conductivity is used so as not to reach a high temperature. Configure.

  The shielding member 8 c is electrically connected to the positive electrode of the power supply 4 via the switch 11. The control unit 30 is connected to the switch 11, and when the control unit 30 closes the switch 11, an anode potential is applied between the shielding members 8c. Thereby, since the shielding member 8c acts as an anode, the plasma 5a is guided to the shielding member 8c.

  The film forming chamber 3 is provided with source gas introduction pipes 6 and 16. By supplying the source gases 7 and 17 from the source gas introduction pipes 6 and 16 to the plasma 5a with the plasma 5a guided to the shielding member 8c, decomposition and polymerization reaction occur, and plasma CVD can be performed. .

  An orifice 20 is disposed at the connecting portion between the plasma gun 2 and the film forming chamber 3. The orifice 20 maintains the pressure in the plasma gun 2 higher than the pressure in the film forming chamber 3 to form a pressure gradient. As a result, the plasma 5 a is drawn from the plasma gun 2 to the film formation chamber 3, and reaction products and ions are prevented from flowing back to the plasma gun 2. The orifice 20 can also be used as an intermediate electrode for guiding plasma to the anode by applying an intermediate potential between the cathode 5 and the anode.

  Although not shown, the film formation chamber 3 is provided with an exhaust port and connected to a vacuum exhaust device. A magnetic field generating means such as an electromagnet can be disposed outside the plasma gun 2 and outside the film forming chamber 3. By this magnetic field, the plasma 5 a generated from the cathode 5 can be converged in a beam shape and can easily pass through the orifice 20.

  Next, using the film forming apparatus shown in FIGS. 1 and 2, the film forming by the plasma CVD method and the film forming by the ion plating method are continuously performed without opening the film forming chamber 3 to the atmosphere. Will be described.

  As preparation, the evaporation crucible 8b is filled with an evaporation material (conductive material) to be formed by an ion plating process, and the shielding member 8c is closed. The substrate 12 is attached to the substrate holder 22. The film forming chamber 3 and the plasma gun 2 are evacuated to a predetermined degree of vacuum.

  First, a plasma CVD process is performed. A discharge gas 1 such as argon or helium is introduced into the plasma gun 2. The control unit 30 closes the switch 11 and opens the switch 9 as shown in FIG. 1, and applies a DC voltage from the power source 4 between the cathode 5 and the shielding member 8c. The cathode generates plasma due to glow discharge at the start of voltage application. However, when glow discharge is continued, the cathode 5 is heated to shift to arc discharge, and DC discharge plasma 5a is generated. The plasma 5a is drawn to the film forming chamber 3 having a pressure lower than that of the plasma gun 2 by the action of the orifice 20, and reaches the shielding member 8c to which the anode potential is applied.

  When the source gases 7 and 17 are supplied from the source gas introduction pipes 6 and 16 into the film forming chamber 3, the source gases 7 and 17 are exposed to the plasma 5 a drawn into the film forming chamber 3, and decomposed products and reaction products. And the like are deposited on the substrate 12 to form the film 13.

  At this time, the shielding member 8c shields the inside of the evaporation crucible 8b. Moreover, since the switch 9 is open and the switch 11 is closed, the plasma 5a concentrates on the shielding member 8c and does not enter the evaporation crucible 8b.

  Next, an ion plating process is performed. While the generation of the plasma 5a in the plasma CVD process is continued, the supply of the raw material gases 7 and 17 that are not used in ion plating is stopped, and the raw material gases that are not used are exhausted sufficiently. In the example of FIG. 2, only the source gas 7 is stopped and the source gas 17 is used for ion plating, so that it remains supplied.

  As shown in FIG. 2, the control unit 30 closes the switch 9, opens the shielding member 8 c by the drive mechanism 23, and further opens the switch 11. By switching in this procedure, the destination of the plasma 5a can be moved from the shielding member 8c to the inside of the evaporation crucible 8b while maintaining the discharge of the plasma 5a, and the evaporation material 8a of the crucible 8b is irradiated with the plasma 5a. can do. The evaporation material 8a is heated by the plasma 5a and evaporated. The evaporated particles are activated by the plasma 5a and deposited on the substrate 12 to form a film 14 by ion plating. When the source gas 17 is supplied as shown in FIG. 2, the source gas 17 is activated by the plasma 5 a and reacts with the evaporated particles, and the reaction product is deposited on the substrate 12 to form the film 14. .

As described above, in the present embodiment, the plasma CVD process and the ion plating process are continuously performed in one batch without opening the film forming chamber 3 to the atmospheric pressure and continuing the discharge. Thus, two different types of films can be successively formed.
Since the evaporation crucible 8b is shielded by the shielding member 8c that also serves as an anode, deposits do not adhere to the evaporation material 8a in the crucible 8b in the plasma CVD process. In addition, when switching between the plasma CVD process and the ion plating process, the film formation chamber 3 is not opened and the plasma is not stopped. Can be improved, and mass productivity can be improved.

  Further, since the film 13 formed by the plasma CVD method is not exposed to the atmosphere, the adhesion of the laminated film is increased, and the durability of the laminated film is improved.

(Second Embodiment)
Next, the configuration of the DC discharge plasma deposition apparatus of the second embodiment will be described with reference to FIG. The film formation apparatus in FIG. 3 can continuously perform film formation by a plasma CVD method and film formation by an evaporation method by resistance heating.

  The film forming apparatus of FIG. 3 is the same process as the film forming apparatus of FIG. 1 of the first embodiment, but a resistance heater 15 is disposed below the evaporation crucible 8b, and the evaporation crucible 8b, the power source 4, and Is different from the film forming apparatus of FIG. A power source 24 is connected to the resistance heater 15. Moreover, the insulating member 8e is arrange | positioned in the part which the shielding member 8c and the crucible 8b contact, and the shielding member 8c and the crucible 8b are electrically insulated. Since other configurations are the same as those of the film forming apparatus of the first embodiment, description thereof is omitted. In addition, although FIG. 3 demonstrated the case where only the source gas introduction pipe 6 was provided, it is also possible to comprise two or more source gas introduction pipes.

  An operation of performing continuous film formation by the plasma CVD method and the resistance heating vapor deposition method with the film forming apparatus of FIG. 3 will be described.

  The plasma CVD process is the same as that of the first embodiment. In a state where the opening of the crucible 8b is covered with the shielding member 8c, the switch 11 is closed, and an anode potential is applied to the shielding member 8c to generate plasma from the plasma gun 2. 5a is withdrawn and the source gas 6 is supplied. As a result, decomposition products and reaction products of the source gas are deposited on the substrate 12 to form the film 13.

  At this time, the plasma 5a drawn out from the plasma gun 2 reaches the shielding member 8c acting as the anode, so that the shielding member 8c is heated.

  When the film 13 having a required thickness is formed, the supply of the source gas 7 is stopped. At this time, the application of the anode potential to the shielding member 8c is continued, and the plasma 5a is kept generated.

  Next, a vapor deposition process is performed. The power supply 24 is turned on, and the crucible 8b and the evaporation material 8a are heated and evaporated by the resistance heater 15. The shielding member 8c is kept closed until a predetermined evaporation rate is obtained, and when the predetermined evaporation rate is reached, the shielding member 8c is opened. The vapor of the evaporation material 8a reaches the substrate 12 and forms a film. Thereby, the shielding member 8c functions as a shutter, and film formation can be performed after reaching a stable evaporation speed.

  Thus, since the shielding member 8c is closed until a predetermined evaporation rate is obtained, the vapor of the evaporation material 8a adheres to the shielding member 8c. In this embodiment, the shielding member 8c is heated by the plasma 5a. Therefore, the deposit can be re-evaporated and exhausted. Therefore, the deposit on the shielding member 8c falls on the evaporation material 8a, and the evaporation rate is not unstable and the purity of the evaporation material 8a is not lowered, so that a stable evaporation rate and high purity can be maintained.

  The plasma 5a can be stopped when the evaporation rate of the evaporation material 8a reaches a predetermined speed and the shielding member 8c is opened, or during the film-forming process by the vapor deposition method without stopping the plasma 5a. It is also possible to leave it generated. Further, if the shielding member 8c is sufficiently heated and the deposits can be evaporated by the residual heat of the shielding member 8c heated in the plasma CVD process, it is possible to stop the deposition before starting the vapor deposition method.

  In the second embodiment, since the evaporant adhering to the shielding member 8c during the film-forming process by the vapor deposition method can be removed by heating with plasma, the shutter (shielding member 8c) of the evaporation source is heated. A high-purity film can be stably formed without the special heating mechanism. This is particularly effective when an organic material or an organic monomer is used as the evaporation material.

  In addition, since it is possible to perform deposition while generating plasma, when a multilayer film is formed by alternately performing the plasma CVD process and the deposition process, the source gas is supplied immediately after the deposition. It can be supplied and plasma CVD can be performed, and the time required for film formation can be shortened.

  In the case where the plasma 5a is kept generated even during the film-forming process by the vapor deposition method, the plasma 5a is cooled by the refrigerant at a position facing the lower surface of the opened shielding member 8c (the surface to which the vapor of the evaporation material 8a is attached). By arranging the dish-shaped member, it is possible to re-evaporate the substance adhering to the lower surface of the shielding member 8c by heating with the plasma 5a and cool it with the dish-shaped member to collect it. Thereby, the evaporation material can be recovered during the film formation by the vapor deposition method, and can be recovered efficiently. Further, the recovered material can be reused, and the manufacturing cost can be reduced when the evaporation material 8a is an expensive organic material or the like.

  In the second embodiment, the configuration in which the evaporation material is heated by the resistance heater has been described. However, the method for heating the evaporation material is not limited to the resistance heater, and heating by infrared irradiation or electron beam irradiation is performed. Other methods such as can be used.

Examples of the present invention and comparative examples will be described below.
(Example)
Using the film forming apparatus of the first embodiment, a 1 μm thick organic silicon film (SiOx film), a 0.1 μm thick zinc oxide film (ZnO film), and a 1 μm thick film are formed on a polycarbonate substrate 12. An organic silicon film (SiOx film) was sequentially formed.

The film forming process is the same as that of the first embodiment, but after the plasma CVD process and the ion plating process are continuously performed, the plasma CVD process is performed again continuously. In the CVD process, hexamethyldisiloxane (HMDSO) was supplied as the source gas 7 and oxygen gas was supplied as the source gas 17 to form an organic silicon film (SiOx film). The film formation conditions for forming the organic silicon film by the plasma CVD process were set as shown in Table 1 below. In the ion plating process, Zn was used as the evaporation material 8a, and a zinc oxide film (ZnO film) was formed while supplying oxygen gas as the source gas 17. The film forming conditions during ion plating were set as shown in Table 2 below. The switching of each process was continuously performed without opening the film forming chamber 3 as described in the first embodiment.

(Comparative example)
As a comparative example, a conventional DC discharge plasma film forming apparatus shown in FIG. The film forming procedure is the same as that in the example, but the anode 10 was arranged at a position facing the ion gun 2 as shown in FIG. In order to prevent organic silicon from adhering to the surface of the evaporation source 8 used in the ion plating step during the plasma CVD step, the plasma CVD step was performed without the evaporation source 8 being disposed. After completion of the plasma CVD process, the film formation chamber 3 was opened to the atmosphere, an evaporation source 8 was disposed, and an ion plating process was performed. Other film forming conditions were the same as those in Tables 1 and 2 of the examples.

(Evaluation)
The impact resistance and chemical resistance of the laminated film were examined for the sample obtained in the example and the sample obtained in the comparative example.

  For impact resistance, a DuPont impact tester (manufactured by Toko Seimitsu Kogyo Co., Ltd.) is used to drop an iron ball having a diameter of about 10 mm, weighted to 500 g, onto the surface of the laminated film from a height of 20 cm. The evaluation was based on the damaged state of the film.

  Chemical resistance was evaluated by dropping 0.1 mol / l NaOH solution onto the surface of the laminated film and checking for the presence or absence of peeling, swelling, or alteration after 24 hours.

Table 3 shows the evaluation results. In both the film impact resistance and chemical resistance, the sample of this example was better than the sample of the comparative example. This is presumed to be because the laminated film of the example has high adhesion at each interface of the laminated film because the film is not exposed to the atmosphere when switching between the plasma CVD process and the ion plating process. .

  In addition, the film forming method of this example can stack different films continuously in one batch, and does not require the film forming chamber to be opened to the atmosphere. Therefore, the exhaust time and the plasma stabilization time are unnecessary. As a result, it was possible to shorten the entire time of the film forming process as compared with the comparative example, and it was confirmed that the film forming method of the example has high mass productivity.

Explanatory drawing which shows the process formed into a film by plasma CVD method using the film-forming apparatus using the direct-current high-density plasma of 1st Embodiment. Explanatory drawing which shows the process formed into a film by the ion plating method using the film-forming apparatus using the direct-current high-density plasma of 1st Embodiment. Explanatory drawing which shows the process formed into a film by plasma CVD method using the film-forming apparatus using the direct-current high-density plasma of 2nd Embodiment. Explanatory drawing which shows the structure of the conventional DC discharge type plasma film-forming apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Discharge gas, 2 ... Plasma gun, 3 ... Film-forming chamber, 4 ... Power supply, 5 ... Cathode, 5a ... Plasma, 6, 16 ... Raw material gas introduction tube, 7, 17 ... Raw material gas, 8a ... Evaporation material, 8b DESCRIPTION OF SYMBOLS Evaporating crucible, 8c ... Shielding member (anode), 12 ... Substrate, 13, 14 ... Membrane, 20 ... Orifice, 21 ... Discharge gas inlet, 22 ... Substrate holder, 24 ... Power source.

Claims (6)

A film forming chamber; a plasma source that generates direct current plasma; a crucible disposed in the film forming chamber and filled with an evaporation material; and a gas introduction pipe for introducing a source gas into the film forming chamber. ,
An opening and closing shielding member is disposed at the opening of the crucible, and the shielding member also serves as an anode of the plasma source.   2. The plasma film forming apparatus according to claim 1, further comprising switching means for selectively applying an anode potential of the plasma source to one of the shielding member and the crucible.   2. The plasma film forming apparatus according to claim 1, wherein a potential applying means for applying an anode potential of the plasma source is connected to the shielding member, and the crucible is heated to heat the evaporation material. A plasma film forming apparatus comprising: means. The plasma film forming apparatus according to claim 2, further comprising: a drive mechanism for opening and closing the shielding member; and a control unit for controlling operations of the drive mechanism and the switching unit.
The control unit closes the shielding member by the driving mechanism, applies the anode potential to the shielding member by the switching unit, and guides direct current plasma of the plasma source to the shielding member, thereby After film formation by plasma chemical vapor deposition by exposing the gas to the direct current plasma, the shielding member is opened by the driving mechanism, and the anode potential is applied to the crucible by the switching means. Then, the direct current plasma is guided to the evaporating material to evaporate the evaporating material to form a film. The plasma film forming apparatus according to claim 3, further comprising: a drive mechanism for opening and closing the shielding member; and a control unit for controlling operations of the drive mechanism, the potential applying unit, and the heating unit.
The control unit closes the shielding member by the driving mechanism, applies the anode potential to the shielding member by the potential applying means, and guides direct current plasma of the plasma source to the shielding member, thereby After the source gas is exposed to the direct-current plasma and film formation is performed by plasma chemical vapor deposition, the crucible is heated by the heating means to evaporate the evaporation material, and the shielding is performed by the driving mechanism. A plasma film forming apparatus characterized in that a member is opened and a film is formed by a vapor deposition method.   6. The plasma film forming apparatus according to claim 5, wherein the control unit continues to apply the anode potential to the shielding member even after the film formation by the plasma chemical vapor deposition method. A plasma film forming apparatus, wherein the direct current plasma is guided to heat the shielding member to remove deposits due to vapor of the evaporation material adhering to the shielding member.

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