JP2008226494A - Electrode and display device - Google Patents

Electrode and display device Download PDF

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JP2008226494A
JP2008226494A JP2007058939A JP2007058939A JP2008226494A JP 2008226494 A JP2008226494 A JP 2008226494A JP 2007058939 A JP2007058939 A JP 2007058939A JP 2007058939 A JP2007058939 A JP 2007058939A JP 2008226494 A JP2008226494 A JP 2008226494A
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thin film
electrode
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Ryoji Onishi
亮司 大西
Takeshi Minami
剛 南
Masao Goto
正夫 後藤
Yuichi Kimura
雄一 木村
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MT Picture Display Co Ltd
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<P>PROBLEM TO BE SOLVED: To provide an electrode having low reflection and low resistance, which can be formed by a simple method. <P>SOLUTION: This electrode 17 has an transparent electrode 12 formed in a prescribed pattern on a substrate 11. An Al thin film 15 containing aluminum a portion of which is electrically connected to the transparent electrode is provided on the transparent electrode, and a Cr thin film 16 containing chromium is formed on the AL thin film. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、EL(エレクトロルミネセンス)表示素子やPDP(プラズマディスプレイパネル)などの表示装置において表示画面側に形成される電極に関する。また、本発明は表示装置に関する。   The present invention relates to an electrode formed on a display screen side in a display device such as an EL (electroluminescence) display element or a PDP (plasma display panel). The present invention also relates to a display device.

図3に示すように、一般的な薄膜EL素子は、絶縁性基板51上に、第1方向に平行なストライプ状の複数の背面電極52、高い誘電率を有する絶縁層53、電界を印加することによって発光する蛍光体層54、高い誘電率を有する絶縁層55、第1方向と直交する第2方向に平行なストライプ状の複数の透明電極56をこの順に有している。背面電極52と透明電極56との間に電圧を印加することにより、この背面電極52と透明電極56との交点位置で蛍光体層54が発光し、この光が透明電極56を透過して画像が表示される。透明電極56としては低抵抗で透明性の高いITOなどの材料が用いられるが、その抵抗値は十分には小さくなく消費電力の増大等の問題を生じる。そこで、抵抗補助電極として、透明電極56に電気的に接触して補助電極(バス電極)57が形成される。   As shown in FIG. 3, a general thin film EL element applies a plurality of stripe-shaped back electrodes 52 parallel to the first direction, an insulating layer 53 having a high dielectric constant, and an electric field on an insulating substrate 51. Thus, a phosphor layer 54 that emits light, an insulating layer 55 having a high dielectric constant, and a plurality of striped transparent electrodes 56 parallel to the second direction orthogonal to the first direction are provided in this order. By applying a voltage between the back electrode 52 and the transparent electrode 56, the phosphor layer 54 emits light at the intersection of the back electrode 52 and the transparent electrode 56, and this light passes through the transparent electrode 56 and passes through the image. Is displayed. As the transparent electrode 56, a material such as ITO having low resistance and high transparency is used. However, the resistance value is not sufficiently small, causing problems such as an increase in power consumption. Therefore, an auxiliary electrode (bus electrode) 57 is formed as a resistance auxiliary electrode in electrical contact with the transparent electrode 56.

EL表示素子やPDP等の表示装置の電極や配線用材料としては電気良導体であるAl、Cu、Au、Agなどが幅広く用いられている。しかし、これらの材料は光反射率が高いため、これらの材料を、補助電極57のように表示画面側に形成される電極材料として用いた場合、外光が反射して画像のコントラストが低下するという問題が生じる。   Al, Cu, Au, Ag, etc., which are good electrical conductors, are widely used as electrodes and wiring materials for display devices such as EL display elements and PDPs. However, since these materials have high light reflectance, when these materials are used as an electrode material formed on the display screen side like the auxiliary electrode 57, external light is reflected and the contrast of the image is lowered. The problem arises.

この問題を解消するために、特許文献1には、良導体のAl薄膜とAl及びMoを含む金属酸化物薄膜とが積層された黒色電極が提案されている。また、特許文献2には、ルテニウム系多酸化物を含む黒色電極が提案されている。光反射抑制層として使用されるこれらの黒色電極は、金属酸化物からなり高い耐熱性を有しているので電極形成以降の製造工程における熱処理に耐えることができる。
特開平2−306505号公報 特開2004−158456号公報
In order to solve this problem, Patent Document 1 proposes a black electrode in which a good conductor Al thin film and a metal oxide thin film containing Al and Mo are laminated. Patent Document 2 proposes a black electrode containing a ruthenium-based polyoxide. Since these black electrodes used as the light reflection suppressing layer are made of metal oxide and have high heat resistance, they can withstand heat treatment in the manufacturing process after electrode formation.
JP-A-2-306505 JP 2004-158456 A

しかし、電極形成以降に熱処理を必要としない場合には、黒色電極が高い耐熱性を有している必要がないため、より低コストで簡素な工法で形成可能な低反射且つ低抵抗な電極が求められる。   However, when heat treatment is not required after electrode formation, the black electrode does not need to have high heat resistance, and therefore, a low-reflective and low-resistance electrode that can be formed at a lower cost and with a simple construction method is provided. Desired.

本発明の電極は、基板上に所定のパターンで形成された透明電極上に、その少なくとも一部が前記透明電極と電気的に接続して形成されたアルミニウムを含むAl薄膜と、前記Al薄膜上に形成されたクロムを含むCr薄膜とを備えることを特徴とする。   The electrode of the present invention comprises an Al thin film containing aluminum formed on a transparent electrode formed in a predetermined pattern on a substrate, at least a part of which is electrically connected to the transparent electrode, and the Al thin film. And a Cr thin film containing chromium formed on the substrate.

また、本発明の表示装置は上記の本発明の電極を備える。   The display device of the present invention includes the above-described electrode of the present invention.

本発明によれば、簡単な方法で形成することができ、低反射性と高導電性とを兼ね備えた電極を提供することができる。   According to the present invention, it is possible to provide an electrode that can be formed by a simple method and has both low reflectivity and high conductivity.

この電極を表示装置の表示画面側に形成される電極として用いると、外光反射が抑えられ、画質のコントラストを向上させることができる。   When this electrode is used as an electrode formed on the display screen side of the display device, external light reflection can be suppressed and the contrast of image quality can be improved.

本発明の電極は、基板上に形成された透明電極に電気的に接続したアルミニウム又はアルミニウムを含む金属化合物からなるAl薄膜と、クロム又はクロムを含む金属化合物からなるCr薄膜とを備えている。これにより、前面基板側(Cr薄膜側)から見たときに電極を黒色化することができ、電極表面での光の反射を抑制することができる。また、電極の抵抗値を、Alと同程度に低く抑えることができる。   The electrode of the present invention includes an Al thin film made of aluminum or a metal compound containing aluminum and a Cr thin film made of chromium or a metal compound containing chromium and electrically connected to a transparent electrode formed on the substrate. Thereby, the electrode can be blackened when viewed from the front substrate side (Cr thin film side), and reflection of light on the electrode surface can be suppressed. In addition, the resistance value of the electrode can be kept as low as Al.

本発明の電極の効果を確認するために行った実験結果を示す。   The experimental result performed in order to confirm the effect of the electrode of this invention is shown.

真空雰囲気下において、基板上に、Al小片を用いて通常の真空蒸着により膜厚約300nmのAl薄膜と、このAl薄膜上にCr粒を用いて通常の真空蒸着により膜厚約40nmのCr薄膜とを連続して形成した。得られた2層積層膜からなる電極の分光反射率を測定した。比較のために、Cr薄膜の膜厚を約10nm,約30nm,約100nmと変える以外は上記と同様にして形成した3種類の2層積層膜からなる電極、基板上に膜厚約300nmのAl薄膜のみを上記と同様に形成した単層の電極、及び基板上に膜厚約40nmのCr薄膜のみを上記と同様にして形成した単層の電極をそれぞれ形成して、それぞれの分光反射率を同様に測定した。結果を図1に示す。   In a vacuum atmosphere, an Al thin film having a film thickness of about 300 nm is formed on a substrate by a normal vacuum vapor deposition using a small Al piece, and a Cr thin film having a film thickness of about 40 nm is formed by a normal vacuum vapor deposition using Cr grains on the Al thin film. Were formed continuously. The spectral reflectance of the electrode composed of the obtained two-layer laminated film was measured. For comparison, an electrode composed of three types of two-layer laminated films formed in the same manner as above except that the film thickness of the Cr thin film is changed to about 10 nm, about 30 nm, and about 100 nm, and an Al film with a film thickness of about 300 nm on the substrate. A single layer electrode in which only a thin film is formed in the same manner as described above and a single layer electrode in which only a Cr thin film having a thickness of about 40 nm is formed in the same manner as described above on a substrate are formed, and the respective spectral reflectances are determined. It measured similarly. The results are shown in FIG.

図1より、Al薄膜及びCr薄膜からなる2層積層膜は、Al薄膜のみからなる単層膜に比べて、波長400〜800nmの可視光全域で反射率が大幅に低減している。更に、Cr薄膜の膜厚が約30nm,約40nm,約100nmである2層積層膜は、Cr薄膜のみからなる単層膜に比べて、反射率がほぼ同等かそれより小さい。   As shown in FIG. 1, the reflectance of the two-layer laminated film composed of the Al thin film and the Cr thin film is greatly reduced in the entire visible light with a wavelength of 400 to 800 nm as compared with the single layer film composed of only the Al thin film. Furthermore, the two-layer laminated film in which the Cr thin film has a thickness of about 30 nm, about 40 nm, or about 100 nm has substantially the same or smaller reflectance than the single layer film made of only the Cr thin film.

Al薄膜及びCr薄膜からなる2層積層膜においてCr薄膜の膜厚が100nmを超えると、その電極表面の反射率はCr薄膜のみからなる単層膜の反射率に近づき、光反射抑制効果は小さくなる。また、Al薄膜及びCr薄膜からなる2層積層膜においてCr薄膜の膜厚が10nmを下回ると、Al薄膜での反射の影響が大きくなり、同様に光反射抑制効果は小さくなる。本発明者らが実験を重ねた結果、Al薄膜及びCr薄膜からなる2層積層膜において良好な光反射抑制効果を得るためにはCr薄膜の膜厚は10〜100nmの範囲内であることが好ましく、約40nmが最適であることが分かった。   When the film thickness of the Cr thin film exceeds 100 nm in the two-layer laminated film composed of the Al thin film and the Cr thin film, the reflectance of the electrode surface approaches that of the single layer film composed of only the Cr thin film, and the light reflection suppressing effect is small. Become. Further, when the film thickness of the Cr thin film is less than 10 nm in the two-layer laminated film composed of the Al thin film and the Cr thin film, the influence of the reflection on the Al thin film is increased, and the light reflection suppressing effect is similarly reduced. As a result of repeated experiments by the present inventors, the film thickness of the Cr thin film is within the range of 10 to 100 nm in order to obtain a good light reflection suppressing effect in the two-layer laminated film composed of the Al thin film and the Cr thin film. Preferably, about 40 nm has been found to be optimal.

上記の、膜厚約300nmのAl薄膜と膜厚約40nmのCr薄膜とからなる2層積層膜、膜厚約300nmのAl薄膜のみからなる単層膜、及び膜厚約300nmのCr薄膜のみからなる単層膜の抵抗値を測定した。結果を表1に示す。   From the above-mentioned two-layer laminated film consisting of an Al thin film with a thickness of about 300 nm and a Cr thin film with a thickness of about 40 nm, a single layer film consisting only of an Al thin film with a thickness of about 300 nm, and a Cr thin film with a thickness of about 300 nm The resistance value of the resulting single layer film was measured. The results are shown in Table 1.

Figure 2008226494
Figure 2008226494

表1より、Al薄膜及びCr薄膜からなる2層積層膜は、Al薄膜のみからなる単層膜と同等の低抵抗値を有していることが分かる。   From Table 1, it can be seen that the two-layer laminated film composed of the Al thin film and the Cr thin film has a low resistance value equivalent to that of the single layer film composed of only the Al thin film.

上記の実験では、基板上にAl薄膜及びCr薄膜からなる2層積層膜を直接形成したが、基板とAl薄膜との密着性が十分でなく、フォトレジストを用いたリフトオフ法により電極を形成する場合には、細線パターンに電極を形成することが困難となる場合がある。このような場合には、基板上に、第1層としてチタン又はチタンを含む金属化合物からなるTi薄膜を形成し、この上にAl薄膜及びCr薄膜を順に積層することが好ましい。このような3層電極であれば、電極の密着性が向上し、パターニング性が向上するので、高精細パターンの電極を容易に形成することができる。   In the above experiment, a two-layer laminated film composed of an Al thin film and a Cr thin film was directly formed on the substrate, but the adhesion between the substrate and the Al thin film was not sufficient, and an electrode was formed by a lift-off method using a photoresist. In some cases, it may be difficult to form electrodes in the fine line pattern. In such a case, it is preferable that a Ti thin film made of titanium or a metal compound containing titanium is formed on the substrate as a first layer, and an Al thin film and a Cr thin film are sequentially laminated thereon. With such a three-layer electrode, the adhesion of the electrode is improved and the patterning property is improved, so that an electrode with a high-definition pattern can be easily formed.

本発明の電極を備えたEL表示素子の製造方法の一例を図2を用いて説明する。但し、以下は一例に過ぎず、本発明がこれに限定されないことはいうまでもない。   An example of a method for manufacturing an EL display element provided with the electrode of the present invention will be described with reference to FIG. However, the following is only an example, and it goes without saying that the present invention is not limited to this.

まず、図2(A)に示すように、絶縁性基板上に複数のストライプ状の背面電極、絶縁層、蛍光体層をこの順に形成した基板11を作成する。次に、基板11上に所定の線幅及び間隔でITOなどからなる複数のストライプ状の透明電極12を形成する。ここで、複数の透明電極12の延設方向は複数のストライプ状の背面電極の延設方向と直交させる。次に、所定の線幅及び間隔でフォトレジスト13のパターンを形成する。次に、全面に、真空蒸着により膜厚約200nmのTi薄膜14を形成し、Ti薄膜14上に真空蒸着により膜厚約300nmのAl薄膜15を形成し、更に、Al薄膜15上に真空蒸着により膜厚約40nmのCr薄膜16を形成する。Ti薄膜14、Al薄膜15、及びCr薄膜16からなる3層積層膜は真空雰囲気を維持したまま連続して形成する。Al薄膜15は、その少なくとも一部が透明電極12と電気的に接続して形成される。次に、フォトレジスト13を除去する。その結果、図2(B)に示すように、透明電極12上に、Ti薄膜14、Al薄膜15、及びCr薄膜16からなる補助電極17が形成されたEL表示素子を得る。   First, as shown in FIG. 2A, a substrate 11 is formed in which a plurality of striped back electrodes, insulating layers, and phosphor layers are formed in this order on an insulating substrate. Next, a plurality of striped transparent electrodes 12 made of ITO or the like are formed on the substrate 11 at a predetermined line width and interval. Here, the extending direction of the plurality of transparent electrodes 12 is orthogonal to the extending direction of the plurality of striped back electrodes. Next, a pattern of the photoresist 13 is formed with a predetermined line width and interval. Next, a Ti thin film 14 having a thickness of about 200 nm is formed on the entire surface by vacuum deposition, an Al thin film 15 having a thickness of about 300 nm is formed on the Ti thin film 14 by vacuum deposition, and vacuum deposition is further performed on the Al thin film 15. Thus, a Cr thin film 16 having a thickness of about 40 nm is formed. The three-layer laminated film composed of the Ti thin film 14, the Al thin film 15, and the Cr thin film 16 is continuously formed while maintaining a vacuum atmosphere. The Al thin film 15 is formed such that at least a part thereof is electrically connected to the transparent electrode 12. Next, the photoresist 13 is removed. As a result, as shown in FIG. 2B, an EL display element is obtained in which the auxiliary electrode 17 composed of the Ti thin film 14, the Al thin film 15, and the Cr thin film 16 is formed on the transparent electrode 12.

上記において、背面電極、絶縁体層、蛍光体層、及び透明電極の材料や形成方法は特に制限はなく、EL表示素子として公知の材料及び方法を適宜選択して使用することができる。例えば、無機EL表示素子の場合であれば、絶縁体層として無機誘電体層、蛍光体層として無機蛍光体層を使用することができる。   In the above, materials and forming methods of the back electrode, the insulator layer, the phosphor layer, and the transparent electrode are not particularly limited, and known materials and methods for the EL display element can be appropriately selected and used. For example, in the case of an inorganic EL display element, an inorganic dielectric layer can be used as the insulator layer, and an inorganic phosphor layer can be used as the phosphor layer.

本発明の電極利用分野は特に制限はないが、例えばEL表示素子やPDPなどの表示装置の表示面側に形成される電極として利用することができる。   Although there is no restriction | limiting in particular in the electrode utilization field of this invention, For example, it can utilize as an electrode formed in the display surface side of display apparatuses, such as an EL display element and PDP.

図1は、電極の分光反射率の測定結果を示した図である。FIG. 1 is a diagram showing the measurement result of the spectral reflectance of the electrode. 図2(A)及び図2(B)は、本発明の電極の製造方法の概略を順に示した断面図である。2 (A) and 2 (B) are cross-sectional views sequentially showing the outline of the method for producing an electrode of the present invention. 図3は、一般的なEL表示素子の概略構成を示した断面図である。FIG. 3 is a cross-sectional view showing a schematic configuration of a general EL display element.

符号の説明Explanation of symbols

11 基板
12 透明電極
13 フォトレジスト
14 Ti薄膜
15 Al薄膜
16 Cr薄膜
17 補助電極
51 絶縁性基板
52 背面電極
53 絶縁層
54 蛍光体層
55 絶縁層
56 透明電極
57 補助電極
11 Substrate 12 Transparent electrode 13 Photoresist 14 Ti thin film 15 Al thin film 16 Cr thin film 17 Auxiliary electrode 51 Insulating substrate 52 Back electrode 53 Insulating layer 54 Phosphor layer 55 Insulating layer 56 Transparent electrode 57 Auxiliary electrode

Claims (4)

基板上に所定のパターンで形成された透明電極上に、その少なくとも一部が前記透明電極と電気的に接続して形成されたアルミニウムを含むAl薄膜と、前記Al薄膜上に形成されたクロムを含むCr薄膜とを備えることを特徴とする電極。   An Al thin film containing aluminum formed on a transparent electrode formed in a predetermined pattern on a substrate and at least a part of which is electrically connected to the transparent electrode, and chromium formed on the Al thin film. An electrode comprising a Cr thin film. 前記透明電極と前記Al薄膜との間にチタンを含むTi薄膜を更に備える請求項1に記載の電極。   The electrode according to claim 1, further comprising a Ti thin film containing titanium between the transparent electrode and the Al thin film. 前記Cr薄膜の膜厚が10nm〜100nmの範囲内である請求項1又は2に記載の電極。   The electrode according to claim 1 or 2, wherein the Cr thin film has a thickness in a range of 10 nm to 100 nm. 請求項1〜3のいずれかに記載の電極を用いた表示装置。   The display apparatus using the electrode in any one of Claims 1-3.
JP2007058939A 2007-03-08 2007-03-08 Electrode and display device Withdrawn JP2008226494A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789494A (en) * 2009-01-22 2010-07-28 索尼公司 Organic electroluminescence device and display unit
JP2011077257A (en) * 2009-09-30 2011-04-14 Showa Denko Kk Method of manufacturing solid electrolytic capacitor
JP2015082435A (en) * 2013-10-23 2015-04-27 ソニー株式会社 Display device and electronic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789494A (en) * 2009-01-22 2010-07-28 索尼公司 Organic electroluminescence device and display unit
JP2011077257A (en) * 2009-09-30 2011-04-14 Showa Denko Kk Method of manufacturing solid electrolytic capacitor
JP2015082435A (en) * 2013-10-23 2015-04-27 ソニー株式会社 Display device and electronic device

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