JP2008218427A - Organic light emitting device, and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device capable of balancing securement of display performance with securement of manufacturability. <P>SOLUTION: Thicknesses DR, DG and DB of barrier layers 163R, 163G and 163B within lower electrode layers 16R, 16G and 16B are made different from one another among three organic light emitting elements 30R, 30G and 30B (DR>DG>DB). By utilizing an interference phenomenon of light caused by the difference of resonance lengths among the three organic light emitting elements 30R, 30G and 30B based on the difference among the thicknesses DR, DG and DB, white light generated in a layer 18 including a luminescent layer is converted to three color light rays, that is, red light ER, green light EG, and blue light EB. Since it is not necessary to color-code the layer 18 including a luminescent layer by using a metal mask, a display size can be increased and, since it is not necessary to convert white light to three color light rays ER, EG and EB by using only a high-concentration and relatively thick color filter for color conversion, utilization efficiency of light is secured. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an organic light-emitting device that emits light using an organic electroluminescence (hereinafter referred to simply as “EL”) phenomenon and a display device including the organic light-emitting device.

  In recent years, an organic EL display that displays an image using an organic EL phenomenon has attracted attention as one of flat panel displays. This organic EL display is excellent in that the viewing angle is wide and the power consumption is low because the light emitting phenomenon of the organic light emitting element itself is used. In particular, an organic EL display is considered to have sufficient response to, for example, a high-definition high-speed video signal, and is being developed for practical use in the field of video.

  In the organic EL display, a driving panel provided with an organic light emitting element and a driving element (TFT; Thin Film Transistor) for driving the organic light emitting element and a sealing panel are mainly arranged to face each other. And the sealing panel are bonded through an adhesive layer so as to sandwich the organic light emitting element. The organic light-emitting element has a configuration in which a layer including a light-emitting layer is sandwiched between two electrode layers. The layer including the light-emitting layer includes a light-emitting layer as a light generation source and other than the light-emitting layer. This layer includes a hole transport layer, an electron transport layer, and the like. As a display method of this organic EL display, for example, a top emission type that emits light generated in the light emitting layer via one electrode layer (an electrode layer on the side close to the sealing panel), and the other electrode layer ( A bottom emission type is known which emits via an electrode layer on the side close to the drive panel.

  In this organic EL display, several mechanisms have already been technicalized as mechanisms for displaying full-color images using organic light-emitting elements. Specifically, for example, three types of light emission that can separately generate three colors corresponding to the three primary colors of light, that is, red (R; Red), green (G), and blue (B) Blue light. A display mechanism in which three organic light-emitting elements are formed by vapor-depositing layers to form three colors and pixels of three colors are formed based on these three organic light-emitting elements has been technically developed. In addition, for example, using three organic light emitting elements that generate white light, and using a color filter for color conversion, each white light is converted into light of three colors (R, G, B). A display mechanism for displaying is technically developed. In this case, in order to ensure the color conversion function of the color filter, it is necessary to increase the filter density or design the filter to be thick.

As for the display mechanism of the organic EL display, several other related technologies have been proposed. Specifically, for example, in order to improve the emission efficiency of light emitted from an organic light emitting device, a technique is known in which the thickness of layers other than the light emitting layer among the layers including the light emitting layer is different for each color. (For example, refer to Patent Document 1). In this organic EL display, light emission efficiency is improved for each color by utilizing a light interference phenomenon based on a difference in thickness of layers other than the light emitting layer, that is, a difference in optical path length in the light emission process.
JP 2000-323277 A

In addition, for example, in order to improve the light emission efficiency as in the related art described above, the thickness of the layers other than the light emitting layer is made constant for each color, and the thickness of the electrode layer (transparent electrode) is set for each color. There is known a technique for making it different from one to another (for example, see Patent Document 2). In this organic EL display, light emission efficiency is improved for each color by utilizing the light interference phenomenon based on the difference in thickness of the electrode layers.
JP 2003-142277 A

In addition, for example, in order to reduce the resistance of an electrode layer (transparent electrode), a technique of inserting a metal thin film (for example, silver (Ag) having a thickness of 50 nm or less) into the electrode layer is known (for example, a patent Reference 3). In this organic EL display, the resistance of the electrode layer is reduced by utilizing the conductive characteristics of the metal thin film.
JP 2002-334792 A

In addition, for example, in order to efficiently generate high-intensity white light, a blue light-emitting layer that generates blue light, a green light-emitting layer that generates green light, and a red light-emitting layer that generates red light are provided. A technique for forming a light emitting layer by stacking is known (for example, see Patent Document 4). In this organic EL display, white light is increased in luminance based on the structural features of the light emitting layer formed by laminating a blue light emitting layer, a green light emitting layer, and a red light emitting layer, and the generation efficiency of the white light is increased. Will improve.
JP-A-10-003990

  By the way, in order to spread the organic EL display, for example, it is necessary to ensure both display performance and manufacturability. However, the above-described conventional organic EL display has a problem that it is difficult to achieve both ensuring display performance and ensuring manufacturability mainly due to a display mechanism and a manufacturing method.

  Specifically, in a conventional organic EL display in which three organic light emitting elements are formed by depositing and coating three types of light emitting layers, for example, three colors (R; Red, Red, G: Green, B: Blue) can be used as they are, and this has an advantage in display performance that there is little use loss of light. For this reason, since a mask (for example, a metal mask) is required, it is difficult to increase the size of the metal mask. On the other hand, in a conventional organic EL display that converts white light into light of three colors (R, G, B) using a color filter, for example, each light emitting layer is made of the same material and uses a metal mask. There is an advantage in manufacturability that it is possible to increase the size of the display because it is not necessary to separately coat the light emitting layer, but white light is used by using a high-density and thick color filter. Since the light is easily absorbed in the process of converting the light into three colors of light, there is a drawback in display performance that the use loss of light becomes large.

  As for the conventional organic EL display, as described above, as a series of related technologies, there are currently several proposals for improving only the display performance, so that the organic EL display is widely used. Considering today's market trends, it can be said that there is still room for improvement in terms of manufacturability.

  The present invention has been made in view of such problems, and a first object thereof is to provide an organic light emitting device capable of ensuring both display performance and manufacturability.

  The second object of the present invention is to provide a display device comprising the organic light emitting device of the present invention.

  The organic light-emitting device according to the present invention includes three organic light-emitting elements that emit light of three different colors on a base, and these three organic light-emitting elements are all arranged in order from the side close to the base in the lower electrode. A layer including a light-emitting layer that generates light of the same color between the three organic light-emitting elements, and an upper electrode layer, and the lower electrode layer is from the side closer to the substrate. In order, there are an adhesion layer for improving the adhesion to the substrate, a resonance layer for resonating light generated in the light emitting layer with the upper electrode layer, and a barrier layer for protecting the resonance layer. It has a stacked structure, and the thickness of the barrier layer is different between the three organic light emitting elements corresponding to the three colors of light, and the three organic light emitting elements emit light generated in the light emitting layer in the resonance layer. A first end face adjacent to the barrier layer of After resonating with the second end face adjacent to the layer including the light emitting layer of the upper electrode layer, light of three colors is emitted through the upper electrode layer, and the adhesion layer is chromium (Cr), At least one metal of the group comprising indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), magnesium (Mg) and molybdenum (Mo) , The alloy of the metal, the metal oxide or the metal nitride, the resonance layer is formed of silver (Ag) or an alloy containing silver, and the barrier layer is indium (In), tin (Sn), zinc ( Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga) and aluminum (Al), at least one metal, an alloy of the metal, the metal oxide or Are those constituted by a light transmitting material containing a metal nitride thereof.

  The display device according to the present invention includes an organic light-emitting device having a configuration in which three organic light-emitting elements that emit light of three different colors are provided on a substrate, and three of the organic light-emitting devices are provided. A structure in which an organic light emitting element is formed by laminating a lower electrode layer, a layer including a light emitting layer that generates light of the same color between three organic light emitting elements, and an upper electrode layer, in order from the side closer to the substrate In order from the side closer to the substrate, the lower electrode layer resonates between the adhesion layer for enhancing the adhesion to the substrate and the light generated in the light emitting layer with the upper electrode layer. The resonant layer and a barrier layer for protecting the resonant layer are stacked, and the thickness of the barrier layer is different between the three organic light emitting devices corresponding to three colors of light. The organic light emitting device After the generated light is resonated between the first end face adjacent to the barrier layer of the resonance layer and the second end face adjacent to the layer including the light emitting layer of the upper electrode layer, the upper electrode layer is Three colors of light are emitted via the contact layer, and the adhesion layer is chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), magnesium (Mg) and at least one metal selected from the group containing molybdenum (Mo), an alloy of the metal, an alloy of the metal or a metal nitride thereof, and the resonance layer is silver (Ag) or an alloy containing silver And the barrier layer includes indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga) and aluminum (Al). Our little Kutomo one metal, an alloy of the metal, are those constituted by a light transmitting material containing the metal oxide or metal nitride thereof.

  In the organic light emitting device according to the present invention, since the thicknesses of the barrier layers constituting the lower electrode layer are different among the three organic light emitting elements, light of the same color is emitted from the light emitting layer between the three organic light emitting elements. When generated, three different colors of light are emitted from the three organic light emitting elements by utilizing the light interference phenomenon caused by the difference in resonance length based on the difference in thickness of the barrier layer.

  In addition, since the display device according to the present invention includes the organic light emitting device according to the present invention, it is not necessary to separately coat the light emitting layer using a metal mask in manufacturing the display device, and the light emitting layer is generated in the light emitting layer. There is no need to color-convert light with a color filter. As a result, the display size can be increased and the light use efficiency can be ensured.

  In the organic light emitting device according to the present invention, the thickness of the barrier layer constituting the lower electrode layer is different among the three organic light emitting elements. As a result, even if light of the same color is generated from the light emitting layer, it is possible to emit light of three different colors from the three organic light emitting elements. Therefore, using this organic light emitting device, a display device capable of ensuring both display performance and manufacturability can be configured.

  In addition, according to the display device according to the present invention, the organic light emitting device of the present invention is provided, and the display size can be increased and the light use efficiency can be ensured. It is possible to achieve both ensuring the production and securing the manufacturability.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
First, a configuration of an organic EL display as a display device according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a cross-sectional configuration of an organic EL display.

  This organic EL display displays an image using the organic EL phenomenon. For example, as shown in FIG. 1, the organic light emitting element 30 and a driving element (TFT) for driving the organic light emitting element 30 are provided. A driving panel 10 as an organic light emitting display device provided with a thin film transistor) 12 and a sealing panel 50 are disposed to face each other, and the driving panel 10 and the sealing panel 50 sandwich the organic light emitting element 30 therebetween. It has a configuration of being bonded via an adhesive layer 60. This organic EL display has, for example, a top emission type structure that emits light E generated in the organic light emitting element 30 upward, that is, from the sealing panel 50 to the outside.

  The drive panel 10 has a configuration in which three organic light emitting elements 30R, 30G, and 30B are provided as the organic light emitting elements 30 on the driving substrate 11 as a base. Specifically, the drive panel 10 is provided, for example, on the one surface of the drive substrate 11 as three TFTs 121, 122, and 123 as the TFT 12, the interlayer insulating layer 13, and two sets of each of the TFTs 121 to 123. The wiring 14, the planarizing layer 15 as a base region in which the organic light emitting elements 30R, 30G, and 30B are disposed, the organic light emitting elements 30R, 30G, and 30B, the auxiliary wiring 40, the in-layer insulating layer 17, and the protection The layer 20 is stacked in this order.

  The drive substrate 11 is for supporting the organic light emitting element 30 and the TFT 12, and is made of an insulating material such as glass.

  The TFTs 12 (121, 122, 123) are for driving the organic light emitting elements 30 (30R, 30G, 30B) to emit light. The TFT 12 includes a gate electrode, a source electrode, and a drain electrode (not shown). The gate electrode is connected to a scanning circuit (not shown), and both the source electrode and the drain electrode are provided on the interlayer insulating layer 13. The wiring 14 is connected through a connection hole (not shown). The configuration of the TFT 12 is not particularly limited, and may be, for example, a bottom gate type or a top gate type.

The interlayer insulating layer 13 is for electrically separating the TFTs 121 to 123, and is made of an insulating material such as silicon oxide (SiO ₂ ) or PSG (Phospho-Silicate Glass).

  The wiring 14 functions as a signal line and is made of a conductive material such as aluminum (Al) or aluminum copper alloy (AlCu).

The planarization layer 15 is for planarizing a base region in which the organic light emitting element 30 is disposed, and for forming a series of layers constituting the organic light emitting element 30 with high accuracy. For example, polyimide or polybenzo It is composed of an organic insulating material such as oxazole and an inorganic insulating material such as silicon oxide (SiO ₂ ).

  The organic light emitting element 30 (30R, 30G, 30R) emits light E for image display. Specifically, light of a predetermined color (wavelength) generated in a layer 18 including a light emitting layer described later is emitted. It is converted into light of three colors (R; Red, G; Green, B; Blue) corresponding to the three primary colors of light and emitted. The organic light emitting element 30R emits red light ER, and in order from the side closer to the driving substrate 11, the lower electrode layer 16R as the first electrode layer, the layer 18 including the light emitting layer, and the second The upper electrode layer 19 as an electrode layer is laminated. The organic light emitting element 30G emits green light EG, and in order from the side close to the driving substrate 11, a lower electrode layer 16G as a first electrode layer, a layer 18 including a light emitting layer, and an upper electrode The layer 19 is laminated. The organic light emitting element 30B emits blue light EB, and in order from the side closer to the driving substrate 11, a lower electrode layer 16B as a first electrode layer, a layer 18 including a light emitting layer, and an upper electrode The layer 19 is laminated. These organic light emitting elements 30R, 30G, and 30B are disposed corresponding to the TFTs 121 to 123, for example, and the lower electrode layers 16R, 16G, and 16B are all connection holes provided in the planarization layer 15. It is connected to a wiring 14 provided for each of the TFTs 121 to 123 through (not shown). The detailed configuration of the organic light emitting elements 30R, 30G, and 30B will be described later (see FIGS. 2 and 3).

  The auxiliary wiring 40 is for reducing a resistance difference between the organic light emitting element 30 by relaxing a difference in resistance between a power source (not shown) and the upper electrode layer 19, and is electrically connected to the upper electrode layer 19. It is connected. The auxiliary wiring 40 is disposed on the same level as the organic light emitting elements 30R, 30G, and 30B. For example, the auxiliary wiring 40 has a layered configuration substantially similar to that of the organic light emitting element 30R. A detailed configuration of the auxiliary wiring 40 will be described later (see FIG. 2).

The in-layer insulating layer 17 electrically isolates the organic light emitting elements 30R, 30G, 30B and the auxiliary wiring 40, and emits light E (ER, EG, EB) emitted from each organic light emitting element 30R, 30G, 30B. Is provided around the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40. The in-layer insulating layer 17 is made of, for example, an organic insulating material such as polyimide or polybenzoxazole, or an inorganic insulating material such as silicon oxide (SiO ₂ ), and has a thickness of about 600 nm.

The protective layer 20 is for protecting the organic light emitting element 30 and is, for example, a passivation film made of a light transmissive dielectric material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN).

  The sealing panel 50 has a configuration in which a color filter 52 is provided on one surface of the sealing substrate 51.

  The sealing substrate 51 supports the color filter 52 and allows the light ER, EG, EB emitted from the organic light emitting elements 30R, 30G, 30B to pass therethrough and be emitted to the outside. It is made of an insulating material such as glass.

  The color filter 52 guides the light ER, EG, and EB emitted from the organic light emitting elements 30R, 30G, and 30B to the outside of the organic EL display, and the outside light enters the organic EL display and the organic light emitting element. When the light is reflected at 30 or the auxiliary wiring 40, the reflected light is absorbed to ensure contrast. The color filter 52 includes three regions arranged corresponding to the organic light emitting elements 30R, 30G, and 30B, that is, a red region 52R, a green region 52G, and a blue region 52B. These red regions The 52R, green region 52G, and blue region 52B are made of, for example, a resin mixed with red, green, and blue pigments, respectively.

  The adhesive layer 60 is for bonding the drive panel 10 and the sealing panel 50 together and is made of an adhesive material such as a thermosetting resin.

  In FIG. 1, only three TFTs 12 (TFTs 121 to 123) and one set of organic light emitting elements 30 (three organic light emitting elements 30R, 30G, and 30B) are shown for the sake of simplicity. The drive substrate 11 is provided with a plurality of TFTs 12 in a matrix, and a plurality of sets of organic light emitting elements 30 are arranged corresponding to the plurality of TFTs 12.

  Next, with reference to FIG. 1 and FIG. 2, the detailed structure of the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40 will be described. FIG. 2 schematically shows an enlarged cross-sectional configuration of the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40.

  The organic light emitting elements 30R, 30G, and 30B have, for example, a stacked configuration having different total thicknesses as shown in FIG.

  As described above, the organic light emitting element 30B as the first organic light emitting element includes the lower electrode layer 16B, the layer 18 including the light emitting layer, and the upper electrode layer 19 stacked in this order from the side closer to the driving substrate 11. It has the structure which was made. The lower electrode layer 16B is in order from the side closer to the driving substrate 11 in order to improve the adhesion with the driving substrate 11, more specifically, the planarization layer 15 provided on one surface of the driving substrate 11. A structure in which a layer 161B, a resonance layer 162B for resonating light generated in the layer 18 including the light emitting layer with the upper electrode layer 19, and a barrier layer 163B for protecting the resonance layer 162B are stacked. have. In particular, the barrier layer 163B has a single-layer structure (barrier layer 163B1). As described above, the organic light emitting element 30B has a resonance structure (a kind of narrow band filter) that resonates light generated in the layer 18 including the light emitting layer between the resonance layer 162B and the upper electrode layer 19. The optical distance L (LB) between the resonance layer 162B and the upper electrode layer 19 satisfies, for example, the relationship of the following formula 2. In particular, the organic light emitting element 30B converts light generated in the layer 18 including the light emitting layer into blue light EB. More specifically, for example, in a top emission type organic EL display, the resonant layer 162B. The light EB resonated between the upper electrode layer 19 and the upper electrode layer 19 is emitted via the upper electrode layer 19.

(Equation 2)
(2LB) / λ + Φ / (2π) = mB
(In the formula, LB, λ, Φ, mB are LB, resonance layer 162B (end face PB1 as the first end face adjacent to barrier layer 163B of resonance layer 162B) and upper electrode layer 19 (upper electrode layer 19). Optical distance between the first end face PB2 adjacent to the layer 18 including the light emitting layer, λ is the peak wavelength of the spectrum of the light to be emitted, Φ is the resonance layer 162B (end face PB1), and (The phase shift of the reflected light generated at the upper electrode layer 19 (end face PB2), mB represents 0 or an integer (for example, mB = 0).)

The adhesion layer 161B includes, for example, chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), magnesium (Mg), and molybdenum (Mo ), At least one metal in the group including the metal, an alloy of the metal, the metal oxide, or the metal nitride thereof, and the thickness thereof is about 1 nm to 300 nm. As these “alloys”, “metal oxides” and “metal nitrides”, for example, indium tin alloy (InSn), indium zinc alloy (InZn), aluminum neodymium alloy (AlNd) and aluminum copper alloy siliconized as alloys (AlCuSi), indium tin oxide (ITO) and indium zinc oxide (IZO) as metal oxides, and titanium nitride (TiN) as metal nitrides. In particular, the adhesion layer 161B is preferably made of, for example, ITO or IZO excellent in adhesion and conductivity. For example, when the adhesion layer 161B is made of ITO or IZO excellent in conductivity as described above, the thickness is preferably about 1 nm to 300 nm, and further considering the surface flatness of the ITO. On the other hand, when it is made of chromium oxide (Cr ₂ O ₃ ) having a conductivity lower than that of ITO or IZO, the connection resistance between the wiring 14 and the lower electrode layer 16B is more preferable. In order to prevent it from becoming too large, about 1 nm to 20 nm is preferable.

  The resonance layer 162B functions as a reflection layer for causing light generated in the layer 18 including the light emitting layer to resonate with the upper electrode layer 19, and is made of, for example, silver (Ag) or an alloy containing silver. Has been. Examples of the alloy containing silver include, together with silver, palladium (Pd), neodymium (Nd), samarium (Sm), yttrium (Y), cerium (Ce), europium (Eu), gadolinium (Gd), terbium ( An alloy comprising at least one of the group comprising Tb), dysprosium (Dy), erbium (Er), ytterbium (Yb), scandium (Sc), ruthenium (Ru), copper (Cu) and gold (Au), Specific examples include silver palladium copper alloy (AgPdCu). The thickness of the resonance layer 162B is, for example, about 100 nm to 300 nm, which is larger than the thickness of the upper electrode layer 19 in the top emission type organic EL display.

The barrier layer 163B (163B1) is made of, for example, a material having a work function larger than that of the resonance layer 162B, and has a thickness of about 1 nm to 100 nm. Specifically, the barrier layer 163B includes, for example, indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga), and aluminum (Al ), A light transmissive material including at least one metal of the group, an alloy of the metal, a metal oxide, or a metal nitride thereof. These “alloys”, “metal oxides” and “metal nitrides” include, for example, indium tin alloys and indium zinc alloys as alloys, ITO, IZO, indium oxide (In ₂ O ₃ ), and oxidation as metal oxides. Examples include tin (SnO ₂ ), zinc oxide (ZnO), cadmium oxide (CdO), titanium oxide (TiO ₂ ) and chromium oxide (CrO ₂ ), and metal nitrides such as titanium nitride and chromium nitride (CrN).

  The organic light emitting element 30G as the second organic light emitting element has substantially the same configuration as the organic light emitting element 30B except that the configuration of the barrier layer 163G is different. That is, as described above, the organic light emitting element 30G has a configuration in which the lower electrode layer 16G, the layer 18 including the light emitting layer, and the upper electrode layer 19 are stacked in order from the side closer to the driving substrate 11. The lower electrode layer 16G has a configuration in which an adhesion layer 161G, a resonance layer 162G, and a barrier layer 163G are stacked in this order from the side closer to the driving substrate 11. In particular, the barrier layer 163G has, for example, a two-layer structure in which a lower barrier layer 163G1 having the same thickness as the barrier layer 163B1 and an upper barrier layer 163G2 are stacked in this order. The lower barrier layer 163G1 and the upper barrier layer 163G2 may be made of the same material or different materials, for example. Similar to the organic light emitting element 30B, the organic light emitting element 30G has a resonance structure that resonates light generated in the layer 18 including the light emitting layer between the resonance layer 162G and the upper electrode layer 19, and the resonance layer The optical distance L (LG) between 162G and the upper electrode layer 19 satisfies, for example, the following equation (3). In particular, the organic light emitting element 30G converts light generated in the layer 18 including the light emitting layer into green light EG. More specifically, for example, in a top emission type organic EL display, the resonant layer 162G is used. The light EG resonated between the upper electrode layer 19 and the upper electrode layer 19 is emitted via the upper electrode layer 19.

(Equation 3)
(2LG) / λ + Φ / (2π) = mG
(Where LG, Φ, and mG are the same as LG in the resonance layer 162G (the end surface PG1 as the first end surface adjacent to the barrier layer 163G in the resonance layer 162G) and the upper electrode layer 19 (in the upper electrode layer 19). The optical distance between the second end face adjacent to the layer 18 including the light emitting layer 18 and the Φ is reflected light generated in the resonance layer 162G (end face PG1) and the upper electrode layer 19 (end face PG2). (Phase shift, mG represents 0 or an integer (for example, mG = 0), respectively)

  The organic light emitting element 30R as the third organic light emitting element has substantially the same configuration as the organic light emitting element 30B except that the configuration of the barrier layer 163R is different. That is, as described above, the organic light emitting element 30R has a configuration in which the lower electrode layer 16R, the layer 18 including the light emitting layer, and the upper electrode layer 19 are stacked in order from the side closer to the driving substrate 11. The lower electrode layer 16R has a three-layer structure in which an adhesion layer 161R, a resonance layer 162R, and a barrier layer 163R are stacked in this order from the side closer to the driving substrate 11. In particular, the barrier layer 163R includes, for example, a lower barrier layer 163R1 having the same thickness as the barrier layer 163B1, an intermediate barrier layer 163R2 having the same thickness as the lower barrier layer 163G1, and an upper barrier layer 163R3 in this order. It has a stacked three-layer structure. The lower barrier layer 163R1, the intermediate barrier layer 163R2, and the upper barrier layer 163R3 may be made of the same material or different materials, for example. Similar to the organic light emitting element 30B, the organic light emitting element 30R has a resonance structure that resonates light generated in the layer 18 including the light emitting layer between the resonance layer 162R and the upper electrode layer 19, and the resonance layer The optical distance L (LR) between 162R and the upper electrode layer 19 satisfies, for example, the following equation (4). In particular, the organic light emitting element 30R converts light generated in the layer 18 including the light emitting layer into green light ER. More specifically, for example, in a top emission type organic EL display, the resonant layer 162R. The light ER resonated between the upper electrode layer 19 and the upper electrode layer 19 is emitted via the upper electrode layer 19.

(Equation 4)
(2LR) / λ + Φ / (2π) = mR
(In the formula, LR, Φ, and mR indicate that LR is the resonance layer 162R (the end surface PR1 as the first end surface adjacent to the barrier layer 163R of the resonance layer 162R) and the upper electrode layer 19 (of the upper electrode layer 19). The optical distance between the second end face adjacent to the layer 18 including the light emitting layer 18 and the Φ is reflected by the resonance layer 162R (end face PR1) and the upper electrode layer 19 (end face PR2). (Phase shift, mR represents 0 or an integer (for example, mR = 0), respectively)

  The adhesion layer 161G, the resonance layer 162G, and the barrier layer 163G (lower barrier layer 163G1, upper barrier layer 163G2) that constitute the organic light emitting element 30G, and the adhesion layer 161R, resonance layer 162R, and barrier layer that constitute the organic light emitting element 30R. The functions, materials, etc. of 163R (lower barrier layer 163R1, middle barrier layer 163R2, upper barrier layer 163R3) are the same as those of the adhesion layer 161B, the resonance layer 162B, and the barrier layer 163B (163B1) constituting the organic light emitting element 30B. .

  Before confirmation, in FIG. 2, in order to make it easy to see the difference in configuration between the organic light emitting elements 30R, 30G, and 30B, both the layer 18 including the light emitting layer and the upper electrode layer 19 are separated from each of the organic light emitting elements 30R, 30G, and 30B. However, in practice, for example, as shown in FIGS. 1 and 2, the layer 18 including the light emitting layer is formed of the lower electrode layer 16R (barrier layer 163R) of the organic light emitting element 30R. ) On the lower electrode layer 16G (upper barrier layer 163G2) of the organic light emitting device 30G and on the lower electrode layer 16B (upper barrier layer 163B3) of the organic light emitting device 30B. And the upper electrode layer 19 continuously extends so as to cover the light-emitting layer 18, that is, neither the layer 18 including the light-emitting layer nor the upper electrode layer 19 is present. It is shared also each of the organic light-emitting devices 30R, 30G, by 30B. A detailed configuration of 18 including the light emitting layer will be described later (see FIG. 3).

  The upper electrode layer 19 includes, for example, at least one metal selected from the group including silver (Ag), aluminum (Al), magnesium (Mg), calcium (Ca), and sodium (Na), or an alloy including the metal. Etc. Examples of the “metal-containing alloy” include a magnesium silver alloy (MgAg). For example, in the top emission type organic EL display, the thickness of the upper electrode layer 19 is thinner than the thickness of the resonance layers 162R, 162G, and 162B, and is about 1 nm to 10 nm. In particular, the upper electrode layer 19 is configured so that the light generated in the 18 including the light emitting layer is resonated with the resonant layers 162R, 162G, and 162B based on the organic light emitting elements 30R, 30G, and 30B having a resonant structure as described above. It functions as a transflective layer that reflects light to resonate between and transmits light ER, EG, and EB after resonating as necessary to emit light.

  As shown in FIG. 2, the thicknesses HR, HG, HB of the layer 18 including the light emitting layer are equal to each other among the three organic light emitting elements 30R, 30G, 30B (HR = HG = HB). The layer 18 including the light emitting layer generates light having the same color (wavelength) between the three organic light emitting elements 30R, 30G, and 30B.

  In particular, the thicknesses DR, DG, and DB of the barrier layers 163R, 163G, and 163B are different from each other among the three organic light emitting elements 30R, 30G, and 30B. Specifically, the three organic light emitting elements 30R, 30G, and The three colors of light ER, EG, and EB emitted from 30B are different from each other. That is, the thicknesses DR, DG, and DB convert the light generated by the three organic light emitting elements 30R, 30G, and 30B in the layer 18 including the light emitting layer into red light ER, green light EG, and blue light EB, respectively. Specifically, in correspondence with the red light ER, the green light EG, and the blue light EB emitted from the three organic light emitting elements 30R, 30G, and 30B. It becomes thinner in order (DR> DG> DB). As described above, “the light generated in the layer 18 including the light emitting layer is converted into red light ER, green light EG, and blue light EB and emitted” includes the light emitting layer as shown in FIG. In the process in which light generated at points NR, NG, NB in the layer 18 resonates between the resonance layers 162R, 162G, 162B and the upper electrode layer 19 and then is emitted through the upper electrode layer 19, Light having the same wavelength when generated in NR, NG, and NB by utilizing the light interference phenomenon caused by the fact that the resonance lengths between the three organic light emitting elements 30R, 30G, and 30B are different from each other. Of the organic light emitting elements 30R, 30G, and 30B, that is, the wavelength corresponding to red in the organic light emitting element 30R, the wavelength corresponding to green in the organic light emitting element 30G, and By shifting each wavelength corresponding to blue in the machine-emitting element 30B, it is finally red light ER, means of generating green light EG and blue light EB.

  For example, as shown in FIG. 2, the auxiliary wiring 40 is an element having the largest total thickness among the organic light emitting elements 30R, 30G, and 30B, that is, the organic light emitting element, except that the auxiliary wiring 40 does not include 18 including the light emitting layer. It has the same laminated structure as 30R.

  Next, with reference to FIGS. 1-3, the detailed structure of 18 containing a light emitting layer is demonstrated. FIG. 3 schematically shows an enlarged cross-sectional configuration of the layer 18 including the light emitting layer.

  For example, as described above, the layer 18 including the light emitting layer is shared by the organic light emitting elements 30R, 30G, and 30B, that is, has a common configuration among the organic light emitting elements 30R, 30G, and 30B. White light is generated as color (wavelength) light. For example, as shown in FIGS. 2 and 3, the layer 18 including the light-emitting layer includes a hole transport layer 181, a light-emitting layer 182, and an electron transport in this order from the side closer to the lower electrode layers 16R, 16G, and 16B. The layer 183 is stacked. For example, the light emitting layer 182 includes a red light emitting layer 182R that generates red light, 182G that generates green light, and 182B that generates blue light in order from the side closer to the hole transport layer 181. That is, by combining the red light, the green light, and the blue light generated from the red light emitting layer 182R, the green light emitting layer 182G, and the blue light emitting layer 182B, respectively, a white light is obtained as a result. It is supposed to be generated.

  The hole transport layer 181 is for increasing the injection efficiency of holes injected into the light emitting layer 182, and also serves as a hole injection layer, for example. The hole transport layer 181 has a hole transport property such as 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA) or α-naphthylphenyldiamine (αNPD). It is made of a material and has a thickness of about 40 nm.

  The red light emitting layer 182R includes a part of holes injected from the lower electrode layers 16R, 16G, and 16B via the hole transport layer 181 and electrons injected from the upper electrode layer 19 via the electron transport layer 183. The red light is generated by recombination with a part of the light. The red light emitting layer 182R includes, for example, at least one of a group including a red light emitting material (fluorescent or phosphorescent), a hole transporting material, an electron transporting material, and a dual charge (hole, electron) transporting material. It is composed of seeds, and its thickness is about 5 nm. As a specific constituent material of the red light emitting layer 182R, for example, about 30% by weight of 2,6-bis [(4′-methoxydiphenylamino) styryl] -1,5-dicyanonaphthalene (BSN) is mixed. 4,4′-bis (2,2-diphenylvinyl) biphenyl (DPVBi) and the like.

  The green light emitting layer 182G generates green light by recombining holes and electrons that have not been recombined in the red light emitting layer 182R. The green light emitting layer 182G is composed of, for example, at least one of a group including a green light emitting material (fluorescent or phosphorescent), a hole transporting material, an electron transporting material, and a charge transporting material. The thickness is about 10 nm. Specific examples of the constituent material of the green light emitting layer 182G include DPVBi mixed with about 5% by weight of coumarin 6 and the like.

  The blue light emitting layer 182B generates blue light by recombining holes and electrons that have not been recombined in the red light emitting layer 182R or the green light emitting layer 182G. The blue light emitting layer 182B includes, for example, at least one of a group including a blue light emitting material (fluorescent or phosphorescent), a hole transporting material, an electron transporting material, and a charge (hole, electron) transporting material. It is composed of seeds, and its thickness is about 30 nm. As a specific constituent material of the blue light emitting layer 182B, for example, 4,4′-bis [2, {4- (N, N-diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) is about 2.5 wt. % Mixed DPVBi and the like.

  The electron transport layer 183 is for increasing the injection efficiency of electrons injected into the light emitting layer 182 and also serves as an electron injection layer, for example. The electron transport layer 183 is made of, for example, 8-hydroxyquinoline aluminum (Alq3), and has a thickness of about 20 nm.

  Next, the operation of the organic EL display will be described with reference to FIGS.

  In this organic EL display, as shown in FIG. 1, three organic light emitting elements 30R, 30G, and 30B are driven using the TFTs 12 (121 to 123), that is, the lower electrode layers 16R, 16G, and 16B and the upper electrode. When a voltage is applied to each of the layers 19, as shown in FIG. 3, in the light emitting layer 182 of the layers 18 including the light emitting layer, the holes and the electron transport supplied from the hole transport layer 181 are transported. White light is generated by recombination with electrons supplied from the layer 183. The white light is a combined light in which red light generated in the red light emitting layer 182R, green light generated in the green light emitting layer 182G, and blue light generated in the blue light emitting layer 182B are combined.

  As shown in FIG. 2, the white light is emitted from the organic light emitting elements 30R, 30G, and 30B as image display light E to the outside of the organic EL display. The wavelength conversion is performed by utilizing the light interference phenomenon caused by the difference in the resonance length between the red light ER, the green light EG, and the blue light EB in the organic light emitting devices 30R, 30G, and 30R. Is done. As a result, as shown in FIG. 1, since the red light ER, the green light EG, and the blue light EB are emitted from the organic light emitting elements 30R, 30G, and 30B, respectively, these three colors of light ER, EG , EB is displayed based on the video.

  When light ER, EG, EB is emitted from the organic light emitting elements 30R, 30G, 30B, as shown in FIG. 2, in each organic light emitting element 30R, 30G, 30B, the layer 18 including the light emitting layer. Is resonated between the resonance layers 612R, 162G, 162B of the lower electrode layers 16R, 16G, 16B and the upper electrode layer 19, so that the light causes multiple interference. Thereby, the half widths of the light ER, EG, and EB finally emitted from the organic light emitting elements 30R, 30G, and 30B are reduced, and the color purity is improved.

  Next, a method for manufacturing the organic EL display shown in FIGS. 1 to 3 will be described with reference to FIGS. 4 to 9 are for explaining a manufacturing process of a main part (lower electrode layers 16R, 16G, and 16B) of the organic EL display, and all show a cross-sectional configuration corresponding to FIG. The regions SR, SG, and SB shown in FIGS. 4 to 9 represent regions in which the organic light emitting elements 30R, 30G, and 30B are formed in the subsequent processes, respectively.

  In the following, first, a manufacturing process of the entire organic EL display will be briefly described with reference to FIGS. 1 to 3, and then a method for manufacturing an organic light emitting device according to the present invention will be described with reference to FIGS. 1 to 9. The formation process of the main part of the applied organic EL display will be described. Since the material, thickness and structural characteristics of a series of components in the organic EL display have already been described in detail, the description thereof will be omitted as appropriate.

  This organic EL display can be manufactured using an existing thin film process including a film forming technique such as sputtering, a patterning technique such as photolithography, and an etching technique such as dry etching and wet etching. That is, when manufacturing an organic EL display, as shown in FIG. 1, first, a plurality of TFTs 12 (TFTs 121 to 123) are formed in a matrix pattern on one surface of the driving substrate 11, and then TFTs 121 to 123 are continuously formed. After the interlayer insulating layer 13 is formed so as to cover the driving substrate 11 in the vicinity thereof, two sets of wirings 14 are patterned for each of the TFTs 121 to 123. Subsequently, a planarizing layer 15 is formed so as to cover the wiring 14 and the surrounding interlayer insulating layer 13, thereby planarizing the underlying region in which the organic light emitting elements 30 R, 30 G, and 30 B will be formed in a later step. To do. Subsequently, a set of organic light emitting elements 30 (30R, 30G, 30B) is pattern-formed on the planarizing layer 15 corresponding to the positions where the TFTs 121 to 123 are disposed. Specifically, the organic EL element 30R is formed by laminating the lower electrode layer 16R, the layer 18 including the light emitting layer, and the upper electrode layer 19 in this order, and the lower electrode layer 16G, the layer 18 including the light emitting layer, and the upper electrode are formed. The organic light emitting element 30G is formed by laminating the layers 19 in this order, and the organic light emitting element 30B is formed by laminating the lower electrode layer 16B, the layer including the light emitting layer, and the upper electrode layer 19 in this order. When forming these organic light emitting elements 30R, 30G, and 30B, for example, as shown in FIG. 1, the organic light emitting elements 30R, 30G, and 30B are continuously extended via the lower electrode layers 16R, 16G, and 16B. The layer 18 including the light emitting layer and the upper electrode layer 19 are formed so as to be shared by the elements 30R, 30G, and 30B, and as shown in FIGS. 1 and 2, of the lower electrode layers 16R, 16G, and 16B The adhesion layers 161R, 161G, and 161B constituting a part are formed and adhered to the driving substrate 11, more specifically, the planarization layer 15 provided so as to cover the driving substrate 11. Subsequently, the drive panel 10 is formed by forming the protective layer 20 so as to cover the upper electrode layer 19.

  Subsequently, a color filter 52 including a red region 52R, a green region 52G, and a blue region 52B corresponding to the organic light emitting elements 30R, 30G, and 30B is formed on one surface of the sealing substrate 51, whereby the sealing panel 50 is formed. Form.

  Finally, using the adhesive layer 60, the drive panel 10 and the sealing panel 50 are bonded so that the organic light emitting elements 30R, 30G, and 30B are sandwiched between the driving substrate 11 and the sealing substrate 51. Thus, an organic EL display is completed.

  When forming the lower electrode layers 16R, 16G, and 16B as the main part of the organic EL display, first, as shown in FIG. 4, for example, sputtering is used to form the driving substrate 11 shown in FIG. More specifically, an adhesion layer 161 (thickness = about 20 nm), a resonance layer 162 (thickness = about 100 nm), a first layer, and the like so as to cover the planarization layer 15 provided on the driving substrate 11. A barrier layer portion 1631 (thickness = T1) as a barrier layer portion is formed and laminated in this order. The adhesion layer 161, the resonance layer 162, and the barrier layer portion 1631 are all finally patterned by using an etching process to constitute a part of the lower electrode layers 16R, 16G, and 16B. This is a preparation layer. When forming the adhesion layer 161 and the barrier layer portion 1631, the above-described metal, metal oxide, metal nitride, or metal compound is used as a forming material, for example, ITO. Further, when the resonance layer 162 is formed, the above-described silver or silver-containing alloy is used as a forming material, for example, silver palladium copper alloy (AgPdCu) is used. In this case, in particular, as described with reference to FIG. 2 above, the resonance length necessary for converting white light into blue light EB using the light interference phenomenon in the organic light emitting element 30B. Is set based on the thickness T1, the thickness T1 of the barrier layer portion 1631 is set.

The formation conditions of the adhesion layer 161, the resonance layer 162, and the barrier layer portion 1631 are, for example, as follows. That is, as the sputtering gas, in order to form the adhesion layer 161 and the barrier layer portion 1631, a mixed gas in which 0.3% of oxygen (O ₂ ) is mixed with argon (Ar) is used to form the resonance layer 162. Argon gas is used for this purpose. Moreover, as sputtering conditions, in any case, pressure = about 0.5 Pa and DC output = about 500 W.

  Subsequently, after applying a photoresist on the barrier layer portion 1631 to form a photoresist film (not shown), the photoresist film is patterned using a photolithography process, as shown in FIG. In addition, an etching mask 71 as a first mask made of, for example, a photoresist film is patterned on the region SB as the first region in which the organic light emitting element 30B is to be formed in the barrier layer portion 1631. .

  Subsequently, as shown in FIG. 5, for example, sputtering is used to cover the etching mask 71 and the surrounding barrier layer portion 1631 so as to cover the barrier layer portion 1632 (thickness = T2) is formed. The barrier layer portion 1632 is a preparation layer that will eventually constitute a part of each of the lower electrode layers 16R and 16G. When the barrier layer portion 1632 is formed, as described above with reference to FIG. 2, the white light is converted into the green light EG using the light interference phenomenon in the organic light emitting element 30G. The thickness T2 of the barrier layer portion 1632 is set so that the necessary resonance length can be secured based on the thickness (T1 + T2). In addition, as a forming material of the barrier layer portion 1632, for example, the same material as the forming material of the barrier layer portion 1631 is used.

  Subsequently, as shown in FIG. 6, a second mask made of, for example, a photoresist film is formed on the region SG as the second region in which the organic light emitting element 30 </ b> G is to be formed in the barrier layer portion 1632. As an etching mask 72, a pattern is formed.

  Subsequently, as shown in FIG. 6, the barrier layer portion 1633 (thickness = thickness = third barrier layer portion) is formed so as to cover the etching mask 72 and the surrounding barrier layer portion 1632 by using, for example, sputtering. T3) is formed. This barrier layer portion 1633 is a preparation layer that will eventually constitute a part of the lower electrode layer 16R. When the barrier layer portion 1633 is formed, as described above with reference to FIG. 2, in the organic light emitting element 30R, white light is converted into red light ER by utilizing the light interference phenomenon. The thickness T3 of the barrier layer portion 1633 is set so that the necessary resonance length can be secured based on the thickness (T1 + T2 + T3). In addition, as a formation material of the barrier layer part 1633, the same material as the formation material of the barrier layer parts 1631 and 1632 is used, for example.

  Subsequently, as shown in FIG. 7, a third mask made of, for example, a photoresist film is formed on the region SR as the third region in which the organic light emitting element 30 </ b> R is to be formed in the barrier layer portion 1633. As an etching mask 73, a pattern is formed.

  Subsequently, by using the series of etching masks 71 to 73 and successively etching and patterning the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 to 1633, as shown in FIG. 161, the resonant layer 162 and the barrier layer portions 1631 to 1633 are selectively removed except for the portions covered by the etching masks 71 to 73. By this etching process, the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 to 1633 are separated for each of the regions SR, SG, and SB. Specifically, in the region SB, the adhesion layer 161, the resonance layer 162, and the barrier layer are separated. The three-layer structure of the portion 1631 remains, the four-layer structure of the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 and 1632 remains in the region SG, and the adhesion layer 161, the resonance layer 162, and the barrier layer portion 1631 in the region SR. A five-layer structure of ˜1633 remains. During the etching process, the etching masks 71 to 73 themselves are also etched, so that the thicknesses of the etching masks 71 to 73 are reduced.

  Finally, by removing the etching masks 71 to 73, as shown in FIG. 9, due to the remaining structure of the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 to 1633, the lower electrode shown in FIG. Layers 16R, 16G, and 16B are completed. Specifically, in the region SB where the organic light emitting element 30B that emits the blue light EB is to be formed, the lower portion having a stacked structure in which the adhesion layer 161B, the resonance layer 162B, and the barrier layer 163B (163B1) are stacked. An electrode layer 16B is formed, and the barrier layer 163B is formed as a single layer structure including a barrier layer portion 1631 (barrier layer 163B1). In the region SG where the organic light emitting element 30G that emits green light EG is to be formed, the lower electrode layer 16G having a stacked structure in which the adhesion layer 161G, the resonance layer 162G, and the barrier layer 163G are stacked is formed. The barrier layer 163G is formed as a two-layer structure including a barrier layer portion 1631 (lower barrier layer 163G1) and 1632 (upper barrier layer 163G2). Further, in the region SR where the organic light emitting element 30R that emits the red light ER is to be formed, the lower electrode layer 16R having a stacked structure in which the adhesion layer 161R, the resonance layer 162R, and the barrier layer 163R are stacked is formed. The barrier layer 163R is formed as a three-layer structure including a barrier layer portion 1631 (lower barrier layer 163R1), 1632 (intermediate barrier layer 163R2), and 1633 (upper barrier layer 163R3).

  The thicknesses T1, T2, and T3 described above are arbitrary as long as the red light ER, the green light EG, and the blue light EB can be finally emitted from the organic light emitting elements 30R, 30G, and 30B, respectively. Can be set. For example, when the total thickness of the layer 18 including the light emitting layer is about 40 nm to 70 nm, T1, T2, T3 = about 2 nm to 100 nm. More specifically, when the total thickness of the layer 18 including the light emitting layer is about 50 nm to 60 nm, T1 = about 2 nm to 20 nm, (T1 + T2) = about 20 nm to 50 nm, (T1 + T2 + T3) = about 50 nm. ~ 80 nm. For reference, for example, the auxiliary wiring 40 shown in FIG. 1 can be formed in parallel through the same procedure as the formation procedure of the organic light emitting element 30R.

  In the organic EL display according to the present embodiment, as shown in FIGS. 1 and 2, the lower electrode layers 16R, 16G, and 16B of the organic light emitting elements 30R, 30G, and 30B are closer to the driving substrate 11. The adhesive layers 161R, 161G, 161B, the resonance layers 162R, 162G, 162B and the barrier layers 163R, 163G, 163B are stacked in order, and the barrier layers 163R, 163G, 163B have thicknesses DR, DG, Since the DBs are different from each other between the organic light emitting elements 30R, 30G, and 30B (DR> DG> DB), for example, as described above in the “operation of the organic EL display”, between the thicknesses DR, DG, and DB. The light emitting layer utilizing the light interference phenomenon caused by the difference in resonance length between the organic light emitting elements 30R, 30G, and 30B based on the difference The white light generated that placed a layer 18 containing three colors of light, that it is possible to convert red light ER, the green light EG and blue light EB. Therefore, in this embodiment, an image can be displayed using these three colors of light ER, EG, and EB.

  In particular, in the present embodiment, the display performance is different from the conventional organic EL display described in the section of “Background Art” on the basis of the structural features capable of constructing the display mechanism described above, as described below. It has advantages both in terms of surface and manufacturability.

  That is, in terms of manufacturability, in order to emit light of three colors (R, G, B), due to structural factors using three types of light emitting layers that can generate light of each color separately. Unlike the conventional organic EL display, which requires separate coating using a metal mask when depositing these three types of light emitting layers, as shown in FIG. 2, the three colors of light ER, EG , EB is used, and one type of light emitting layer 182 capable of generating monochromatic light (white light) is used, that is, the light emitting layer 182 is shared between the organic light emitting elements 30R, 30G, and 30B. Since there is no need to separately coat the light emitting layer 182 using a mask, the display size can be increased.

  On the other hand, in terms of display performance, after using a light-emitting layer that generates white light, white light is converted into three colors (R, G, B) using only a high-density and thick color filter for color conversion. Unlike the conventional organic EL display which has been converted to light, instead of performing color conversion using only the color filter, the thickness DR described above is used together with the color filter 52 as shown in FIGS. The white light is converted into three colors of light ER, EG, and EB by using the light interference phenomenon caused by the difference in resonance length between the organic light emitting devices 30R, 30G, and 30B based on the difference between DG, DB, and DG. Therefore, the color filter 52 can be low in concentration and thin. As a result, it is possible to prevent an increase in light use loss due to light absorption of the color filter 52 during color conversion, that is, to ensure light use efficiency.

  Therefore, in this embodiment, since it is possible to have advantages in both display performance and manufacturability, it is possible to ensure both display performance and manufacturability. In this case, in particular, on the manufacturing side, based on the point that the light-emitting layer 182 using a metal mask is not separately applied, it is possible to prevent the light-emitting layer 182 from being defective due to particles being mixed during the separate operation. You can also

  In the present embodiment, the organic light emitting elements 30R, 30G, and 30B include the resonance layers 162R, 162G, and 162B, respectively, and resonate light between the resonance layers 162R, 162G, and 162B and the upper electrode layer 19. Since the resonance structure is provided, the color purity of the light ER, EG, and EB is improved as described above as “operation of the organic EL display”. Therefore, a high-quality spectrum with a high peak intensity and a narrow wavelength width can be ensured for each of the lights ER, EG, and EB, and an image excellent in color reproducibility can be displayed. In this case, in particular, if the resonant layers 162R, 162G, and 162B are configured using highly reflective silver or an alloy containing silver, the use efficiency of the resonated light is increased, and thus the display performance is further improved. be able to.

  In the present embodiment, the barrier layers 163R, 163G, and 163B serve to provide a difference in resonance length between the organic light emitting elements 30R, 30G, and 30B as described above, and protect the resonance layers 162R, 162G, and 162B. Therefore, the resonance layers 162R, 162G, and 162B react with oxygen and sulfur components in the atmosphere to oxidize or corrode, or react with chemicals used during the manufacturing process of the organic EL display. Corrosion can be prevented.

  In the present embodiment, since the lower electrode layers 16R, 16G, and 16B are configured to include the adhesion layers 161R, 161G, and 161B for improving the adhesion with the planarization layer 15, these lower electrode layers 16R, 16G, and 16B can be firmly fixed to the planarization layer 15.

  In this embodiment, since the barrier layers 163R, 163G, and 163B are formed using a material having a work function larger than that of the resonance layers 162R, 162G, and 162B, the amount of holes injected into the light emitting layer 182 is increased. Can be made.

  The organic EL display manufacturing method according to the present embodiment has a characteristic configuration in which the thicknesses DR, DG, and DB of the barrier layers 163R, 163G, and 163B are different from each other between the organic light emitting elements 30R, 30G, and 30B. In order to form the lower electrode layers 16R, 16G, and 16B, only the existing thin film process is used, and a new and complicated manufacturing process is not used. In addition, the lower electrode layers 16R, 16G, and 16B can be continuously formed with good reproducibility using only the existing thin film process. Therefore, in the present embodiment, an organic EL display including the lower electrode layers 16R, 16G, and 16B can be easily and stably manufactured.

[Second Embodiment]
Next, a second embodiment of the present invention will be described.

The organic EL display as the display device according to the present embodiment has the configuration of the organic EL display described in the first embodiment except that the formation steps of the lower electrode layers 16R, 16G, and 16B are different (see FIG. 1 to FIG. 3), and can be manufactured using a manufacturing process similar to that of the organic EL display. In this organic EL display, in particular, for example, in order to form the barrier layers 163R, 163G, and 163B of the lower electrode layers 16R, 16G, and 16B with high accuracy, the barrier layer portion 1631 is made of tin oxide (SnO ₂ ) or oxidized. It is preferable that the barrier layer portion 1632 is made of ITO and the barrier layer portion 1633 is made of IZO.

  10 to 17 are for explaining a manufacturing process of the lower electrode layers 16R, 16G, and 16B in the organic EL display, and all show a cross-sectional configuration corresponding to FIG. 10 to 17, the same reference numerals are given to the same elements as those described in the first embodiment.

When forming the lower electrode layers 16R, 16G, and 16B, first, as shown in FIG. 10, the adhesion layer 161 (thickness = about 20 nm) is formed so as to cover the planarization layer 15 by using, for example, sputtering. ), The resonance layer 162 (thickness = about 100 nm), the barrier layer portion 1631 (thickness = T1) as the first barrier layer portion, and the barrier layer portion 1632 (thickness) as the second barrier layer portion. = T2) and a barrier layer portion 1633 (thickness = T3) as a third barrier layer portion are formed and laminated in this order. As the material for forming the adhesion layer 161 and the barrier layer portions 1631 to 1633, the metal, metal oxide, metal nitride, or metal compound described in the first embodiment is used for each. For example, the adhesion layer 161 In addition, ITO is used as the barrier layer portion 1632, tin oxide (SnO ₂ ) is used as the barrier layer portion 1631, and IZO is used as the barrier layer portion 1633. Further, as a material for forming the resonance layer 162, silver or an alloy containing silver described in the first embodiment is used, for example, silver palladium copper alloy (AgPdCu). When the barrier layer portions 1631 to 1633 are formed, as described above with reference to FIG. 2, the organic light emitting elements 30R, 30G, and 30B each convert white light into red using the light interference phenomenon. The thicknesses T1 to T3 are respectively set so as to ensure the resonance lengths necessary for conversion into the light ER, the green light EG, and the blue light EB. In particular, when the barrier layer portion 1632 made of ITO is formed, for example, when the barrier layer portion 1633 made of IZO is wet-etched in a later step, the barrier layer portion 1632 serves as a stop layer that stops the progress of the etching process. In order to function, the barrier layer portion 1632 is deposited at a high temperature, or annealed after deposition and crystallized. When the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 to 1633 are formed and stacked using sputtering, for example, these series of layers are continuously formed in the same vacuum environment. .

The formation conditions of the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 to 1633 are, for example, as follows. That is, as the sputtering gas, in order to form the adhesion layer 161 and the barrier layer portion 1632, a mixed gas in which 0.3% of oxygen (O ₂ ) is mixed with argon (Ar) is used to form the resonance layer 162. In order to form the barrier layer portion 1633, an argon gas is used to form the barrier layer portion 1631, and a mixed gas of 0.5% oxygen (O ₂ ) mixed with argon (Ar) is used to form the barrier layer portion 1631. A mixed gas in which 1.0% of oxygen (O ₂ ) is mixed with argon (Ar) is used. Moreover, as sputtering conditions, in any case, pressure = about 0.5 Pa and DC output = about 500 W.

  Subsequently, as illustrated in FIG. 11, a first mask made of, for example, a photoresist film is formed on the region SR as the first region in which the organic light emitting element 30 </ b> R is to be formed in the barrier layer portion 1633. As an etching mask 81, a pattern is formed.

Subsequently, by using wet etching together with the etching mask 81 and etching and patterning the barrier layer portion 1633, the portion of the barrier layer portion 1633 covered by the etching mask 81 as shown in FIG. The other portions are selectively removed, leaving the barrier layer portion 1633 in the region SR and exposing the barrier layer portion 1632 in the peripheral region of the region SB. When performing this wet etching treatment, as an etchant, for example, a mixed acid of phosphoric acid (H ₃ PO ₄ ), nitric acid (HNO ₃ ), and acetic acid (CH ₄ COOH), or oxalic acid (C ₂ H ₂ O _4). ). During this wet etching process, as described above, the barrier layer portion 1632 made of crystallized ITO having resistance to the etchant functions as a stop layer, and the etching process proceeds when the etching of the barrier layer portion 1633 is completed. The stopping process prevents the etching process from reaching the barrier layer portion 1632.

  Subsequently, as shown in FIG. 13, a first layer made of, for example, a photoresist film is formed on the exposed surface of the barrier layer portion 1632 on the region SG as the second region where the organic light emitting element 30G is to be formed. An etching mask 82 as a second mask is patterned. When forming the etching mask 82, for example, if necessary, the used etching mask 81 is once removed before forming the etching mask 82, and then the etching mask 82 is formed at the same time as the etching mask 81 is formed. To re-form.

  Subsequently, by using wet etching together with the etching masks 81 and 82, the barrier layer portion 1632 is etched and patterned, thereby covering the barrier layer portion 1632 with the etching masks 81 and 82 as shown in FIG. The portions other than the portion that has been formed are selectively removed, leaving the barrier layer portion 1632 in the regions SR and SG, and exposing the barrier layer portion 1631 in the peripheral regions of the regions SR and SG. When performing this wet etching process, for example, hydrochloric acid (HCl), an acid containing hydrochloric acid, or a mixed acid of hydrofluoric acid and nitric acid is used as an etchant. In this wet etching process, similarly to the barrier layer portion 1632 described above, the barrier layer portion 1631 made of tin oxide having resistance to the etchant functions as a stop layer, and etching is performed when the etching of the barrier layer portion 1632 is completed. Since the progress of the process is stopped, the etching process is prevented from reaching the barrier layer portion 1631.

  Subsequently, as shown in FIG. 15, the first surface made of, for example, a photoresist film is formed on the exposed surface of the barrier layer portion 1631 on the region SB as the third region where the organic light emitting element 30 </ b> B is to be formed. Then, an etching mask 83 as a mask 3 is patterned. When the etching mask 83 is formed, for example, if necessary, the used etching masks 81 and 82 are once removed before the etching mask 83 is formed, and then the etching mask 83 is formed and etched at the same time. The masks 81 and 82 are formed again.

  Subsequently, by using dry etching together with the etching masks 81 to 83, the adhesion layer 161, the resonance layer 162, and the barrier layer portion 1631 are continuously etched and patterned, as shown in FIG. The portions other than the portions covered by the etching masks 81 to 83 are selectively removed from the resonance layer 162 and the barrier layer portion 1631. By this etching process, the adhesion layer 161, the resonance layer 162, and the barrier layer portion 1631 are separated for each of the regions SR, SG, and SB. Specifically, in the region SR, the adhesion layer 161, the resonance layer 162, and the barrier layer portion 1631 are separated. In the region SG, a four-layer structure including the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 and 1632 remains, and in the region SB, the adhesion layer 161, the resonance layer 162, and the barrier layer. A three-layer structure consisting of the portion 1631 remains. During the etching process, the etching masks 81 to 83 themselves are also etched, so that the thickness of the etching masks 81 to 83 is reduced.

  Finally, by removing the etching masks 81 to 83, as shown in FIG. 17, due to the remaining structure of the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 to 1633, the first embodiment described above. As in FIG. 9, the lower electrode layers 16R, 16G, and 16B shown in FIG. 2 are completed.

  Also in the method of manufacturing the organic EL display according to the present embodiment, the lower electrode layers 16R, 16G, and 16B can be continuously formed with good reproducibility using only the existing thin film process. As in the first embodiment, the organic EL display can be manufactured easily and stably.

  In particular, in this embodiment, the barrier layer portions 1631 to 1633 are formed using materials having different resistances to the etchant, and specifically, the etchant for wet etching the barrier layer portion 1633 is used. The barrier layer portion 1632 is formed using a material having resistance to heat, and the barrier layer portion 1631 is similarly formed using a material resistant to an etchant for wet etching the barrier layer portion 1632. Therefore, when the barrier layer portion 1633 is etched, the barrier layer portion 1632 functions as a stop layer for stopping the etching process, and similarly, when the barrier layer portion 1632 is etched, the barrier layer portion 1631 is used as the stop layer. Function as. Therefore, it is possible to prevent the etching process from reaching unnecessary portions, so that the lower electrode layers 16R, 16G, and 16B can be formed with high accuracy.

  Further, in this embodiment, when the adhesion layer 161, the resonance layer 162, and the barrier layer portions 1631 to 1633 are formed and laminated by sputtering, these series of layers are continuously formed in the same vacuum environment. Unlike the case of forming a series of these layers in a plurality of vacuum environments, that is, via a vacuum environment and an atmospheric pressure environment, foreign matter in the atmospheric pressure environment is mixed between each layer. And the interface between the layers can be kept clean.

  The operation, action, and effect relating to the organic EL display according to the present embodiment are the same as those in the first embodiment.

  As described above, the present invention has been described with reference to some embodiments. However, the present invention is not limited to the above-described embodiments, and as long as the same effects as those embodiments can be obtained. Can be freely deformed.

  Specifically, for example, in each of the above embodiments, as shown in FIG. 3, in order to generate white light in the light emitting layer 182, the light emitting layer 182 is changed to a red light emitting layer 182R, a green light emitting layer 182G, and a blue light emitting layer 182G. The three-layer structure in which the light-emitting layer 182B is stacked is used. However, the structure is not necessarily limited thereto, and the structure of the light-emitting layer 182 can be freely changed as long as white light can be generated. Examples of the structure other than the above three-layer structure related to the light emitting layer 182 include (1) a single layer structure using a white light emitting material capable of generating white light, and (2) a red light emitting material, a green light emitting material, and a blue color. A single layer structure using a mixed material in which light emitting materials are mixed, or (3) a mixed light emitting layer made of a mixed material in which red light emitting material and green light emitting material are mixed, and a green light emitting material and a blue light emitting material are mixed. Examples thereof include a two-layer structure in which another mixed light emitting layer made of a mixed material is stacked. In any of these cases, the same effects as those of the above embodiments can be obtained.

  In each of the above embodiments, white light is generated in the light emitting layer 182. However, the present invention is not necessarily limited to this. For example, the difference in resonance length between the organic light emitting elements 30R, 30G, and 30B is obtained. As long as the light generated in the light emitting layer 182 can be converted into the three colors of light ER, EG, and EB, the color of the light generated in the light emitting layer 182 can be freely changed. Even in this case, the same effects as those of the above embodiments can be obtained.

  In each of the above embodiments, the relationship DR> DG> DB is established between the thicknesses DR, DG, DB of the barrier layers 163R, 163G, 163B constituting the organic light emitting elements 30R, 30G, 30B. However, the present invention is not necessarily limited to this, and the relationship between the thicknesses DR, DG, and DB can be freely changed as long as the same effects as those of the above embodiments can be obtained. is there. If this point is described in more detail, the relationship DR> DG> DB described in each of the above embodiments is expressed as mR = mG between mR, mG, and mB in a series of mathematical expressions (Equations 2 to 4). = MB (for example, mR = mG = mB = 0) is established, and depending on the setting of these mR, mG, and mB values, the relationship between the thicknesses DR, DG, and DB Can change. For example, when a relationship of mR (= mG) ≠ mB (for example, mR = mG = 0, mB = 1) is established between mR, mG, and mB, the thicknesses DR, DG , DB> DR> DG is established. In this case, in particular, the thickness of the thickest barrier layer 163B can be about 100 nm or more.

  Further, in each of the above embodiments, as shown in FIGS. 1 and 2, the case where the present invention is applied to a top emission type organic EL display has been described. However, the present invention is not necessarily limited thereto. As shown in FIGS. 18 and 19, the present invention may be applied to a bottom emission type organic EL display. FIG. 18 shows a cross-sectional configuration of the bottom emission type organic EL display, and FIG. 19 is an enlarged cross-sectional configuration of the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40 configuring the organic EL display shown in FIG. Schematically. As shown in FIG. 18, this organic EL display is mainly arranged so that (1) TFTs 12 (121 to 123) do not correspond to the arrangement positions of the organic light emitting elements 30 (30 R, 30 G, 30 B). (2) The color filter 52 is disposed between the driving substrate 11 and the TFT 12 and the interlayer insulating layer 13, and as shown in FIG. 19, (3) the resonance layers 162R, 162G, and 162B Except for the fact that the thickness is thinner than the thickness of the upper electrode layer 19, it has substantially the same configuration as the top emission type organic EL display shown in FIG. 1. In this organic EL display, the organic light emitting elements 30R, 30G, and 30B include light ER, EG, and EB resonated between the resonance layers 162R, 162G, and 162B and the upper electrode layer 19, and the lower electrode layers 16R, 16G, and 16B. It is supposed to be released via In this case, the resonance layers 162R, 162G, and 162B have a thickness of about 1 nm to 50 nm, and the upper electrode layer 19 has a thickness of about 100 nm to 300 nm. In the bottom emission type organic EL display, for example, as shown in FIG. 18, a hollow containing a deoxidizing material is used instead of including the protective layer 20, the adhesive layer 60, and the sealing panel 50 (sealing substrate 51). A sealing cap having a structure may be provided. Also in this bottom emission type organic EL display, the same effect as the top emission type organic EL display described in each of the above embodiments can be obtained.

  In each of the above embodiments, the case where the organic light-emitting device of the present invention is applied to an organic EL display as a display device has been described. However, the present invention is not necessarily limited thereto. You may make it apply to other display apparatuses other than an organic electroluminescent display. Of course, the organic light-emitting device of the present invention can also be applied to devices other than the display device, for example. Examples of the “device other than the display device” include a lighting device. In these cases, the same effects as those of the above embodiments can be obtained.

  The organic light-emitting device and the display device including the same according to the present invention can be applied to, for example, an organic EL display.

It is sectional drawing showing the cross-sectional structure of the organic electroluminescent display which concerns on the 1st Embodiment of this invention. It is sectional drawing which expands and represents typically the cross-sectional structure of the organic light emitting element and auxiliary wiring which were shown in FIG. FIG. 3 is a cross-sectional view schematically illustrating an enlarged cross-sectional configuration of a layer including a light emitting layer illustrated in FIG. 2. It is sectional drawing for demonstrating the manufacturing process of the organic electroluminescent display which concerns on the 1st Embodiment of this invention. FIG. 5 is a cross-sectional view for explaining a step following the step in FIG. 4. FIG. 6 is a cross-sectional view for explaining a step following the step in FIG. 5. FIG. 7 is a cross-sectional view for explaining a step following the step in FIG. 6. FIG. 8 is a cross-sectional view for explaining a step following the step in FIG. 7. FIG. 9 is a cross-sectional view for explaining a step following the step in FIG. 8. It is sectional drawing for demonstrating the manufacturing process of the organic electroluminescent display which concerns on the 2nd Embodiment of this invention. It is sectional drawing for demonstrating the process following FIG. FIG. 12 is a cross-sectional view for explaining a process following the process in FIG. 11. It is sectional drawing for demonstrating the process following FIG. It is sectional drawing for demonstrating the process following FIG. It is sectional drawing for demonstrating the process following FIG. FIG. 16 is a cross-sectional view for illustrating a process following the process in FIG. 15. FIG. 17 is a cross-sectional view for illustrating a process following the process in FIG. 16. It is sectional drawing for demonstrating the modification regarding the structure of an organic electroluminescent display. FIG. 19 is a cross-sectional view schematically showing an enlarged cross-sectional configuration of the organic light-emitting element and auxiliary wiring shown in FIG. 18.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Drive panel, 11 ... Drive board, 12 (121-123) ... TFT, 13 ... Interlayer insulation layer, 14 ... Wiring, 15 ... Planarization layer, 16R, 16G, 16B ... Lower electrode layer, 17 ... In layer Insulating layer, 18 ... layer including light emitting layer, 19 ... upper electrode layer, 20 ... protective layer, 30 (30R, 30G, 30B) ... organic light emitting element, 40 ... auxiliary wiring, 50 ... sealing panel, 51 ... sealing Substrate, 52 ... color filter, 52R ... red region, 52G ... green region, 52B ... blue region, 60 ... adhesive layer, 161, 161R, 161G, 161B ... adhesion layer, 71-73, 81-83 ... etching mask, 162, 162R, 162G, 162B ... resonance layer, 163R (163R1), 163G, 163B ... barrier layer, 163G1,163B1 ... lower barrier layer, 163B2 ... intermediate barrier layer, 16 G2, 163B3 ... upper barrier layer, 181 ... hole transport layer, 182 ... light emitting layer, 182R ... red light emitting layer, 182G ... green light emitting layer, 182B ... blue light emitting layer, 183 ... electron transport layer, 1631-1633 ... barrier layer Part, DR, DG, DB, HR, HG, HB ... thickness, E ... light (image display light), ER ... red light, EG ... green light, EB ... blue light, LR, LG, LB ... optical distance, PR1, PG1, PB1, PR2, PG2, PB2 ... end face, SR, SG, SB ... region.

Claims (14)

Three organic light-emitting elements that emit light of three different colors are provided on a base, and these three organic light-emitting elements are all in order from the side close to the base, the lower electrode layer, and the three organic light-emitting elements. An organic light emitting device having a configuration in which a layer including a light emitting layer that generates light of the same color between elements and an upper electrode layer are laminated,
The lower electrode layer includes, in order from the side closer to the substrate, an adhesion layer for enhancing adhesion to the substrate and a resonance layer for causing light generated in the light emitting layer to resonate with the upper electrode layer. And a barrier layer for protecting the resonance layer,
The thickness of the barrier layer is different between the three organic light emitting devices corresponding to the three colors of light,
The three organic light emitting devices are configured to cause light generated in the light emitting layer to be adjacent to a first end face adjacent to the barrier layer in the resonance layer and a layer including the light emitting layer in the upper electrode layer. And resonating with the second end surface to emit the light of the three colors through the upper electrode layer,
The adhesion layer is made of chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), magnesium (Mg), and molybdenum (Mo). Composed of at least one metal of the group comprising, an alloy of the metal, a metal oxide, or a metal nitride thereof,
The resonant layer is made of silver (Ag) or an alloy containing silver,
The barrier layer includes indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga), and aluminum (Al). An organic light-emitting device made of a light-transmitting material containing at least one metal, an alloy of the metal, a metal oxide, or a metal nitride thereof.   The organic light emitting device according to claim 1, wherein the thickness of the layer including the light emitting layer is equal between the three organic light emitting elements.   The organic light emitting device according to claim 1, wherein the layer including the light emitting layer is an organic layer.   The light-emitting layer includes a red light-emitting layer that generates red light, a green light-emitting layer that generates green light, and a blue light-emitting layer that generates blue light in order from the side closer to the lower electrode layer. The organic light-emitting device according to claim 1, having the configuration described above.   2. The organic light emitting device according to claim 1, wherein the thickness of the barrier layer is set such that red light, green light, and blue light are emitted from the three organic light emitting elements, respectively.   The organic light-emitting device according to claim 5, wherein a thickness of the barrier layer decreases in order corresponding to the red light, the green light, and the blue light emitted from the three organic light-emitting elements.   The organic light-emitting device according to claim 1, wherein the barrier layer has a thickness in a range of 1 nm to 100 nm. The barrier layer includes indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), and oxide. _2. The organic light-emitting device according to claim 1, wherein the organic light-emitting device is made of a light transmissive material containing at least one metal oxide selected from the group consisting of cadmium (CdO), titanium oxide (TiO ₂ ), and chromium oxide (CrO ₂ ). .   The organic light emitting device according to claim 1, wherein the barrier layer is made of a material having a work function larger than that of the resonance layer.   The resonance layer is composed of silver (Ag), palladium (Pd), neodymium (Nd), samarium (Sm), yttrium (Y), cerium (Ce), europium (Eu), gadolinium (Gd), and terbium (Tb). , Dysprosium (Dy), erbium (Er), ytterbium (Yb), scandium (Sc), ruthenium (Ru), copper (Cu), and an alloy containing at least one kind of gold (Au) The organic light-emitting device according to claim 1. The substrate is provided with a planarization layer for planarizing a base region in which the three organic light emitting elements are disposed,
The organic light-emitting device according to claim 1, wherein the adhesion layer is for improving adhesion with the planarization layer. The organic light-emitting device according to claim 1, wherein an optical distance L between the resonance layer and the upper electrode layer satisfies the relationship of Equation 1.
(Equation 1)
(2L) / λ + Φ / (2π) = m
(In the formula, L, λ, Φ, m are the same as L in the resonance layer (first end face adjacent to the barrier layer in the resonance layer) and the upper electrode layer (including the light emitting layer in the upper electrode layer). Optical distance between adjacent second end faces), λ is the peak wavelength of the spectrum of light desired to be emitted, and Φ is reflected light generated in the resonance layer (first end face) and the upper electrode layer (second end face) Phase shift, and m represents an integer.)   2. The organic light emitting device according to claim 1, wherein a thickness of the resonance layer is in a range of 100 nm to 300 nm, and a thickness of the upper electrode layer is in a range of 1 nm to 10 nm. An organic light-emitting device having a configuration in which three organic light-emitting elements that emit light of three different colors are provided on a base, and the three organic light-emitting elements of the organic light-emitting devices are all the base A display device having a configuration in which a lower electrode layer, a layer including a light emitting layer that generates light of the same color between the three organic light emitting elements, and an upper electrode layer are stacked in order from the side closer to ,
The lower electrode layer includes, in order from the side closer to the substrate, an adhesion layer for enhancing adhesion to the substrate and a resonance layer for causing light generated in the light emitting layer to resonate with the upper electrode layer. And a barrier layer for protecting the resonance layer,
The thickness of the barrier layer is different between the three organic light emitting devices corresponding to the three colors of light,
The three organic light emitting devices are configured to cause light generated in the light emitting layer to be adjacent to a first end face adjacent to the barrier layer in the resonance layer and a layer including the light emitting layer in the upper electrode layer. And resonating with the second end surface to emit the light of the three colors through the upper electrode layer,
The adhesion layer is made of chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), magnesium (Mg), and molybdenum (Mo). Composed of at least one metal of the group comprising, an alloy of the metal, a metal oxide, or a metal nitride thereof,
The resonant layer is made of silver (Ag) or an alloy containing silver,
The barrier layer includes indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga), and aluminum (Al). A display device comprising a light-transmitting material including at least one metal, an alloy of the metal, a metal oxide, or a metal nitride thereof.

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