JP2008216167A - Diagnostic system of semiconductor detector and its diagnostic method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a diagnostic system of a semiconductor detector capable of monitoring a leak current and a vacuum state of the detector being a factor of the deterioration in detector performance. <P>SOLUTION: This diagnostic system of the semiconductor detector is used for a multiple wave high analysis of a nuclide, and has the semiconductor detector 1 executing the multiple wave high analysis of the nuclide, a front end amplifier 2 amplifying an output signal of the nuclide analyzed by the semiconductor detector 1, and a leak current monitoring means 52 monitoring the detector leak current of the semiconductor detector 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor detector diagnostic apparatus for diagnosing a semiconductor detector used in a multi-wave height analyzer and a diagnostic method therefor.

  2. Description of the Related Art Conventionally, a discrimination method using a scintillation detector is widely applied to discrimination of line types in radiation measurement, for example, discrimination between neutrons and γ rays, or discrimination between α rays and β (γ) rays. Of these, for the discrimination between the former, that is, neutrons and γ rays, a method called a time discrimination method using a liquid scintillator, also known as a zero crossing method, is often used. This zero crossing method utilizes the fact that when the waveform is differentiated twice, the rise time is different, so that the time for zero crossing can be different.

  In addition, the rise time discrimination method is often used for the latter separation between α rays and β (γ) rays. This time discrimination method of rise time is to extract the time between the cross point of the signal delayed from one signal and the signal whose amplitude is attenuated as information proportional to the rise time, and once convert it into wave height information. is there. The method using the rise time discrimination for the discrimination of α and β is known as a HO switch detector.

In particular, with regard to the line type discrimination type radiation detector capable of performing high-efficiency discrimination such as the difference in charge amount and mass number of α rays and β rays, α rays and γ rays, α rays and proton rays, or ion beams,
A technique is known that performs line type discrimination in various hybrid fields when performing radiation measurement using a scintillation detector (see, for example, Patent Document 1).

  A multi-wave height analyzer using a semiconductor detector is known in a nuclide analysis system that requires this type of high measurement accuracy. Since this semiconductor detector is required to have high measurement accuracy, that is, linearity and resolution, it is necessary to take measures against deterioration of the detector performance. However, in the conventional technique, there is no means for monitoring the leak current or vacuum state of the detector which is a factor of performance deterioration.

For this reason, at present, from the viewpoint of detector protection, the liquid nitrogen liquid level is monitored, and when the level falls below a predetermined set value, a technique for cutting off the high voltage applied to the semiconductor detector is used. Yes.
JP 2001-42043 A

  In the conventional nuclide analysis system that requires high measurement accuracy as described above, a multi-wave height analyzer using a semiconductor detector is used. Since this semiconductor detector is required to have high measurement accuracy, that is, linearity and resolution, it is necessary to take measures against deterioration of the detector performance.

  However, the conventional technique has a problem that there is no means for monitoring the leakage current and vacuum state of the detector, which are factors of performance degradation. For this reason, at present, the deterioration of the performance of the detector can be known only after the linearity and the deterioration of the resolution related to the measurement accuracy are found from the measurement data.

  Also, at present, from the viewpoint of protection of the detector, the liquid nitrogen liquid level is monitored, and when the level falls below a predetermined set value, the high voltage applied to the semiconductor detector is shut off afterwards. There was a problem that it was not too much.

  The present invention has been made in order to solve the above-mentioned problems, and is provided with means for monitoring the cause of the deterioration of the detector, and an alarm is generated when the performance deterioration of the detector is detected from the obtained monitoring data. A semiconductor detector diagnostic device and a diagnostic method for adding a condition for cutting off the high voltage applied to the semiconductor detector when the monitoring data exceeds a certain set value. The purpose is to provide.

  In order to achieve the above object, the present invention provides a semiconductor detector used for multi-wave height analysis of a radionuclide, a semiconductor detector for detecting the nuclide, and an output signal of the nuclide analyzed by the semiconductor detector. And a leakage current monitoring means for monitoring a detector leakage current of the semiconductor detector.

  In order to achieve the above object, the present invention provides a semiconductor detector for use in a multi-wave height analysis of a radionuclide, wherein the semiconductor detector for detecting the nuclide and a crystal of the semiconductor detector are cooled to a low temperature state. It has a cryostat to hold, and a vacuum state monitoring means for monitoring the vacuum state of the crystal of the semiconductor detector cooled by the cryostat.

  In order to achieve the above object, the present invention provides a semiconductor detector diagnostic method used for multiple wave height analysis of a radionuclide, a wave height analysis step in which the detection of the nuclide is performed by a semiconductor detector, and the semiconductor detector. An amplification step for amplifying the output signal of the analyzed nuclide by a preamplifier, and a leakage current monitoring step for monitoring a detector leakage current leaked from the semiconductor detector by a leakage current monitoring means. Is.

  In order to achieve the above object, the present invention provides a semiconductor detector diagnostic method used for multiple wave height analysis of radionuclides, a wave height analysis step in which detection of the nuclide is performed by a semiconductor detector, A cooling step of cooling the crystal by a cryostat and maintaining the crystal in a low temperature state, and a vacuum state monitoring step of monitoring a vacuum state of the crystal of the semiconductor detector cooled by the cryostat by a vacuum state monitoring means. Is.

  According to the semiconductor detector diagnostic apparatus and method of the present invention, by providing a means for monitoring the leakage current and vacuum state of the detector, which is a factor of the detector performance deterioration, the measurement accuracy such as nuclide analysis is deteriorated. It becomes possible to grasp in advance before appearing as measurement data, and an alarm can be issued. In addition, a leak current or vacuum alarm can be added as a condition for interrupting the high voltage applied to the semiconductor detector, and the accuracy of measurement data by the detector can be improved.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a semiconductor detector diagnosis apparatus and method according to the present invention will be described below with reference to the drawings. Here, the same or similar parts are denoted by common reference numerals, and redundant description is omitted.

  FIG. 1 is a block diagram showing an electrical circuit of the semiconductor detector 1 and the preamplifier 2.

  A semiconductor detector diagnostic device used for nuclide multiple wave height analysis includes a semiconductor detector 1 and a preamplifier 2. In this semiconductor detector 1, nuclide multiple wave height analysis is performed. The nuclide output signal analyzed by the semiconductor detector 1 is transmitted to the preamplifier 2 and amplified. Further, a leakage current monitoring means 52 shown in FIG. 2 for monitoring the detector leakage current 5 leaking from the semiconductor detector 1 is provided.

  Next, the basic configuration of the semiconductor detector 1 and the preamplifier 2 will be described with reference to FIG.

  As shown in the figure, nuclide multiple wave height analysis is performed in the crystal 7 of the semiconductor detector 1. On the other hand, power is supplied to the preamplifier 2 through a preamplifier power connector 4. The nuclide output signal analyzed by the semiconductor detector 1 is transmitted to the preamplifier 2 and amplified. The amplified output signal is output from the signal output terminal 6. The detector leakage current 5 leaking from the semiconductor detector 1 is transmitted to the preamplifier 2 and amplified.

  The preamplifier 2 is provided with a test point (TP) voltage terminal 3. The detector leakage current (IL) 5 leaked from the semiconductor detector 1 is a test point voltage at the TP voltage terminal 3 when there is no radiation input to the semiconductor detector 1 (hereinafter referred to as no signal). It can be known by measuring (hereinafter referred to as TP voltage). In general, this TP voltage is measured when maintenance is inspected or when an abnormality occurs, and is used for confirming the performance of the semiconductor detector 1.

  Next, details of the leakage current monitoring means 52 will be described with reference to FIG.

  FIG. 2 is a block diagram showing the semiconductor detector diagnostic apparatus according to the first embodiment of the present invention.

  As shown in the figure, the semiconductor detector diagnosis apparatus includes a detection unit 31, a signal processing unit 32, and an arithmetic processing diagnosis unit 33. The detection unit 31 mainly includes a semiconductor detector 1 and a preamplifier 2. In this semiconductor detector 1, nuclide multiple wave height analysis is performed. The nuclide output signal analyzed by the semiconductor detector 1 is transmitted to the preamplifier 2 and amplified. Further, a leakage current monitoring means 52 for monitoring the detector leakage current 5 leaking from the semiconductor detector 1 is provided.

  The leakage current monitoring unit 52 includes a signal processing unit 32 and an arithmetic processing diagnosis unit 33.

  The detector leakage current 5 amplified in the preamplifier 2 is transmitted to the input signal processing unit 13 of the signal processing unit 32 and processed. The detector leakage current 5 is also transmitted to the spectrum memory control unit 12 via the input signal processing unit 13. In addition, a high-voltage power supply application unit 14 is provided for cutting off a high-voltage applied voltage to the preamplifier 2 as necessary using a detector leakage current 5 described later. Further, the liquid nitrogen level in the liquid nitrogen container 9 of the detection unit 31 is monitored by the liquid nitrogen liquid level monitoring unit 15. The liquid nitrogen level lowering signal transmitted to the liquid nitrogen liquid level monitoring unit 15 is transmitted to the high voltage power application unit 14 and used to cut off the high voltage applied voltage of the preamplifier 2.

  Signals from the spectrum memory control unit 12, the input signal processing unit 13, and the high voltage power supply unit 14 are sent to the command / data transfer function 20 through the transmission interface 17 and the transmission interface 17 of the arithmetic processing diagnosis unit 33. Communicated. The signal received by the command / data transfer function 20 is transmitted to the data collection diagnosis unit 19. Further, it is also transmitted to the processing cycle management unit 21.

  In the present embodiment configured as described above, the detector leakage current 5 leaking from the semiconductor detector 1 is processed by the signal processing unit 32 and the arithmetic processing diagnosis unit 33 constituting the leakage current monitoring means 52. The input signal processing unit 13 of the signal processing unit 32 is configured so that the TP voltage (Vtp) of the preamplifier 2 can be taken into the measurement system in addition to the normal detector signal output. As described above, since the TP voltage of the preamplifier 2 is configured to be transmitted into the measurement system, the detector leakage current (IL) 5 leaking from the semiconductor detector 1 can be always automatically monitored. it can.

  According to the present embodiment, it is possible to constantly monitor the leakage current (IL) 5 leaked from the semiconductor detector 1 by taking the measurement data of the TP voltage (Vtp) into the system. As described above, since the leak current (IL) 5 leaked from the semiconductor detector 1 can be always monitored automatically without using a human system, the performance deterioration diagnosis of the semiconductor detector 1 can be performed with high accuracy.

  Thus, it becomes possible to monitor the leak current 5 of the detector, which is a factor of the detector performance deterioration, and before the deterioration of the measurement accuracy such as nuclide analysis which is impossible in the prior art appears as measurement data. Alarm can be issued, and it is possible to take measures against deterioration of detector performance in advance. In addition, it is possible to add a leak current alarm as a condition for interrupting the high voltage applied to the semiconductor detector, and the accuracy of measurement data by the semiconductor detector 1 can be improved.

  Next, a modified example of the leakage current monitoring unit 52 will be described. Here, the leakage current monitoring means 52 capable of automatically diagnosing detector performance degradation at the time of background (hereinafter referred to as BG) measurement will be described.

  Since the leak current (IL) 5 from the semiconductor detector 1 is generally small, it is effective to use the leak current monitoring means 52 when the input signal to the detector is very small.

  For this reason, when it can be determined that the sample to be measured is not loaded on the semiconductor detector 1 as in the case of BG measurement (hereinafter referred to as no signal), the leakage current is automatically monitored. is there.

  In the present embodiment configured as described above, a command is transmitted to the signal processing unit 32 in the arithmetic processing diagnosis unit 33 of FIG. 2 when the processing cycle management unit 21 determines that there is no signal. This command is transmitted to the detection unit 31 via the signal processing unit 32. A test point voltage (Vtp) is measured at the TP voltage terminal 3 shown in FIG. 1 of the preamplifier 2 of the detection unit 31. By measuring the test point voltage (Vtp), data corresponding to the detector leakage current (IL) 5 at the time of BG measurement can be acquired.

  According to the present embodiment, by regularly performing BG measurement and the like, it is possible to collect detector performance diagnosis data of the semiconductor detector 1 and the like without requiring a special operation. That is, it becomes possible to monitor the detector leakage current 5 of the detector, which is a factor of the detector performance deterioration, and before the deterioration of measurement accuracy such as nuclide analysis, which is impossible in the prior art, appears as measurement data. It becomes possible to grasp in advance, and an alarm can be issued. In addition, it is possible to add an alarm relating to the leakage current as a condition for interrupting the high voltage applied to the semiconductor detector, and the accuracy of measurement data by the detector can be improved.

  Next, another modification of the leakage current monitoring unit 52 will be described. Here, the detector leakage current 5 automatically monitored at the time of no signal in the data collection diagnosis unit 19 of the arithmetic processing diagnosis unit 33 is stored, and when the data drift exceeds a certain set value, an abnormal alarm signal is generated. An alarm means for generating the error will be described. This drift means that the indication value of the semiconductor detector 1 changes slowly due to a change in ambient conditions or the like even though there is no change in input.

  In the detection unit 31, the test point voltage (Vtp) is measured at the TP voltage terminal 3 of the preamplifier 2. The measured test point voltage (Vtp) is transmitted to the data collection diagnostic unit 19 of the arithmetic processing diagnostic unit 33 via the signal processing unit 32. In the data collection diagnosis unit 19, the test point voltages (Vtp) are managed side by side in chronological order. Further, the test point voltage (Vtp) managed in the time series in the data collection diagnosis unit 19 is used to determine the presence or absence of a long-term drift tendency. When this data drift exceeds a predetermined set value, it is diagnosed that the performance of the semiconductor detector 1 is degraded. An alarm is transmitted as a result of the diagnosis through alarm means (not shown).

  According to the present embodiment, when the performance deterioration of the semiconductor detector 1 cannot be checked by a short-term or single inspection, the presence or absence of a long-term drift tendency is monitored and judged. The performance deterioration of the semiconductor detector 1 can be automatically diagnosed.

  Next, still another modification of the leakage current monitoring unit 52 will be described. Here, the detector leakage current 5 automatically monitored at the time of no signal in the data collection diagnosis unit 19 of the arithmetic processing diagnosis unit 33 is stored, and further, when this data drift exceeds a certain set value, an abnormal alarm signal is generated. An alarm means for generating the error will be described. That is, by providing the leakage current monitoring means 52, an operator generates an alarm signal as necessary using the detector leakage current 5 when there is no signal, thereby diagnosing performance deterioration of the semiconductor detector 1. Is.

  In the present embodiment configured as described above, first, an operator selects execution. Then, a command is transmitted from the arithmetic processing diagnosis unit 33 to the signal processing unit 32. In the signal processing unit 32, the high voltage power supply voltage applied from the high voltage power supply application unit 14 is controlled. The adjusted high-voltage power supply voltage is applied as an output voltage to the preamplifier 2 in the detection unit 31. Note that the arithmetic processing diagnosis unit 33 collects data corresponding to the detector leakage current 5.

  In addition, the data collection diagnosis unit 19 of the arithmetic processing diagnosis unit 33 collects output voltage value changes for each high-voltage power supply voltage value as characteristic information. This collected output voltage value change is compared with a reference value of a predetermined characteristic pattern. When the change in the output voltage value exceeds the reference value, it is diagnosed that the performance of the semiconductor detector 1 is deteriorated, and an alarm can be generated from alarm means (not shown).

  According to the present embodiment, it is possible to automatically grasp the change characteristic of the leakage current value by the control of the high-voltage power supply voltage that requires complicated work during normal operation. Thus, it becomes possible to automatically diagnose the performance deterioration of the semiconductor detector 1.

  Next, still another modification of the leakage current monitoring unit 52 will be described. Here, an alarm unit is described in which an operator diagnoses detector performance deterioration using the detector leak current 5 of the leak current monitoring unit 52 and generates an alarm signal as necessary.

  The arithmetic processing diagnosis unit 33 can monitor the detector leakage current 5 of the semiconductor detector 1 shown in FIG. By monitoring the detector leakage current 5, it is possible to generate an alarm signal for detector performance deterioration of the semiconductor detector 1. By transmitting this alarm signal as a leakage current abnormality signal to the high voltage power supply application unit 14 of the signal processing unit 32, the high voltage applied voltage of the semiconductor detector 1 of the detection unit 31 can be cut off.

  According to the present embodiment, the liquid nitrogen level lowering signal from the liquid nitrogen liquid level monitoring unit 15 conventionally used for protecting the detector is received and the high voltage applied voltage to the preamplifier 2 is cut off. The high-voltage applied voltage to the preamplifier 2 can be cut off as necessary using the detector leakage current abnormality signal. Thus, the performance deterioration diagnosis of the semiconductor detector 1 can be automatically and accurately performed.

  FIG. 3 is a front view showing a schematic configuration of a diagnostic device for a semiconductor detector according to a second embodiment of the present invention. In this figure, the vacuum detector 14 of the semiconductor detector 1 and the cryostat 8 is shown.

  In general, the crystal 7 of the semiconductor detector 1 shown in FIG. 1 is built in a cryostat 8 and cooled by liquid nitrogen in order to reduce leakage current due to thermal vibration. The cryostat 8 is said to be a low temperature thermostatic device or a low temperature thermostatic bath. The cryostat 8 is a device for maintaining and controlling the low temperature, and the wall of the container is provided with a high degree of heat insulation by using a vacuum or the like. Here, it is cooled by liquid nitrogen supplied from the liquid nitrogen container 9 shown in FIG. 2 as a cold heat source. In order to prevent thermal insulation of the semiconductor detector 1 and adhesion of impurities to the surface of the crystal 7, the cold finger 45, which is a liquid nitrogen cooling part of the semiconductor detector 1 and the cryostat 8, is partitioned by a vacuum sealing state part 42 and vacuum sealed. Held in a state. A vacuum gauge 43 constituting the vacuum state monitoring means 53 is mounted via a valve 44 on the vacuum sealed state portion 42 that holds the semiconductor detector 1 and the cryostat 8 in a vacuum sealed state.

  In the present embodiment configured as described above, the semiconductor detector 1 is built in the cryostat 8 and cooled by liquid nitrogen in order to reduce leakage current due to thermal vibration of the crystal 7. A vacuum gauge 43 is attached to the vacuum sealed state portion 42 that holds the semiconductor detector 1 and the cryostat 8 in a vacuum sealed state. This vacuum gauge 43 can automatically measure the degree of vacuum. The degree-of-vacuum data relating to the measured degree of vacuum is transmitted to the data collection diagnosis unit 19 of the arithmetic processing diagnosis unit 33.

  According to the present embodiment, the vacuum sealed state of the semiconductor detector 1 is provided for a long time by providing the vacuum gauge 43 that constitutes the vacuum state monitoring means 53 in the vacuum sealed state portion 42 containing the semiconductor detector 1 and the cryostat 8. Therefore, it is possible to automatically diagnose performance deterioration of the semiconductor detector 1. In addition, it is possible to monitor the vacuum state that is a cause of detector performance deterioration, and it becomes possible to grasp in advance before the measurement accuracy such as linearity and resolution such as nuclide analysis appear as measurement data, An operator can be notified as an alarm. Furthermore, a vacuum alarm can be added as a condition for interrupting the high voltage applied to the semiconductor detector, and the accuracy of measurement data by the detector can be improved.

  Next, another modification of the vacuum state monitoring unit 53 will be described. Here, alarm means (not shown) for generating an alarm signal when the degree of vacuum monitored by the vacuum state monitoring means 53 exceeds a predetermined set value will be described.

  Using the vacuum state monitoring means 53 shown in FIG. 3, the degree of vacuum of the vacuum sealed state part 42 containing the semiconductor detector 1 and the cryostat 8 is measured. The degree-of-vacuum data relating to the measured degree of vacuum is transmitted to the data collection diagnosis unit 19 of the arithmetic processing diagnosis unit 33 shown in FIG. In the arithmetic processing diagnosis unit 33, the transmitted vacuum degree data is arranged and managed in time series in the data collection diagnosis unit 19. The data collection / diagnosis unit 19 determines whether or not there is a long-term tendency to lower the vacuum level. When the decrease in the degree of vacuum exceeds a predetermined set value, it is diagnosed that the degree of vacuum of the semiconductor detector 1 has decreased, and an alarm can be generated by alarm means (not shown).

  According to the present embodiment, the high-voltage applied voltage can be cut off using the high-voltage power supply application unit 14 as necessary using the value of the decrease in the degree of vacuum of the semiconductor detector 1. Thus, it becomes possible to monitor the vacuum sealing state of the semiconductor detector 1 that could not be monitored so far, and it is possible to automatically diagnose a decrease in the degree of vacuum that tends to be a long term.

  Next, still another modification of the vacuum state monitoring unit 53 will be described. Here, a means for cutting off the high voltage applied to the semiconductor detector 1 when the degree of vacuum monitored by the vacuum state monitoring means 53 exceeds a predetermined set value will be described.

  In the arithmetic processing diagnosis unit 33, the degree of vacuum of the vacuum sealed state unit 42 including the semiconductor detector 1 and the cryostat 8 is measured using the vacuum state monitoring unit 53. By monitoring the degree of vacuum, an alarm for a drop in the degree of detector vacuum can be issued. This alarm is transmitted to the high voltage power application unit 14 of the signal processing unit 32 as a vacuum degree abnormality signal. A vacuum degree abnormality signal is transmitted from the high voltage power supply application unit 14 and the high voltage applied voltage of the semiconductor detector 1 is cut off.

  According to the present embodiment, the high voltage applied voltage can be cut off as necessary using the vacuum degree abnormality signal. Thus, the performance deterioration diagnosis of the semiconductor detector 1 can be automatically and accurately performed.

  Furthermore, the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit of the present invention by combining the embodiments of the present invention. Can do.

The block diagram which shows the electrical circuit of a semiconductor detector and a preamplifier. The block diagram which shows the diagnostic device of the semiconductor detector of the 1st Embodiment of this invention. The front view which shows schematic structure of the diagnostic apparatus of the semiconductor detector of the 2nd Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor detector, 2 ... Preamplifier, 3 ... TP voltage terminal, 4 ... Preamplifier power connector, 5 ... Detector leak current, 6 ... Signal output terminal, 7 ... Crystal, 8 ... Cryostat, 9 ... Liquid nitrogen container , 12 ... Spectral memory control unit, 13 ... Input signal processing unit, 14 ... High voltage power supply unit, 15 ... Liquid nitrogen liquid level monitoring unit, 17, 18 ... Transmission interface, 19 ... Data collection diagnostic unit, 20 ... Command data Transfer function, 21 ... Processing cycle management unit, 22 ... Liquid nitrogen liquid level monitoring unit, 31 ... Detection unit, 32 ... Signal processing unit, 33 ... Operation processing diagnosis unit, 42 ... Vacuum sealed state unit, 43 ... Vacuum gauge, 44 ... Valve, 45 ... Cold finger (liquid nitrogen cooling section), 52 ... Leak current monitoring means, 53 ... Vacuum state monitoring means.

Claims (10)

In a semiconductor detector diagnostic device used for multi-wave height analysis of radionuclides,
A semiconductor detector for detecting the nuclide;
A preamplifier for amplifying the output signal of the nuclide analyzed by the semiconductor detector;
Leakage current monitoring means for monitoring the detector leakage current of the semiconductor detector;
A diagnostic device for a semiconductor detector, comprising:   2. The semiconductor detector diagnosis apparatus according to claim 1, wherein the leak current monitoring means includes a data collection diagnosis unit that monitors the detector leak current and diagnoses the detector performance deterioration when there is no signal.   Alarm means for generating an alarm signal when the detector leakage current automatically monitored at the time of no signal in the data collection diagnostic unit is stored and a data drift related to the detector leakage current exceeds a set value. The diagnostic device for a semiconductor detector according to claim 2, further comprising:   2. The semiconductor according to claim 1, further comprising alarm means for an operator to diagnose deterioration of detector performance using the detector leak current of the leak current monitoring means and to generate an alarm signal if necessary. Detector diagnostic device.   5. The semiconductor detector diagnosis apparatus according to claim 3, further comprising a high voltage applied voltage unit that receives the alarm signal and interrupts a high voltage applied voltage of the semiconductor detector. In a semiconductor detector diagnostic device used for multi-wave height analysis of radionuclides,
A semiconductor detector for detecting the nuclide;
A cryostat that cools the crystal of the semiconductor detector and holds it at a low temperature; and
Vacuum state monitoring means for monitoring the vacuum state of the crystal of the semiconductor detector cooled by the cryostat,
A diagnostic device for a semiconductor detector, comprising:   7. The semiconductor detector diagnosis apparatus according to claim 6, further comprising alarm means for generating an alarm signal when the degree of vacuum monitored by the vacuum state monitoring means exceeds a predetermined set value. .   8. The semiconductor detector diagnosis apparatus according to claim 7, further comprising a high voltage applied voltage cut-off means for receiving the alarm signal and cutting off a high voltage applied voltage of the semiconductor detector. In the diagnostic method for semiconductor detectors used for multi-wave height analysis of radionuclides,
A wave height analyzing step of detecting the nuclide by the semiconductor detector;
An amplification step of amplifying the output signal of the nuclide analyzed by the semiconductor detector by a preamplifier;
A leakage current monitoring step of monitoring a detector leakage current leaked from the semiconductor detector by a leakage current monitoring means;
A method for diagnosing a semiconductor detector, comprising: In the diagnostic method for semiconductor detectors used for multi-wave height analysis of radionuclides,
A wave height analyzing step of detecting the nuclide by the semiconductor detector;
A cooling step of cooling the crystal of the semiconductor detector by a cryostat and maintaining a low temperature state;
A vacuum state monitoring step of monitoring a vacuum state of the crystal of the semiconductor detector cooled by the cryostat by a vacuum state monitoring means;
A method for diagnosing a semiconductor detector, comprising:

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