JP2008215979A - Mask for ion milling sample manufacturing apparatus, and the sample manufacturing device - Google Patents

Mask for ion milling sample manufacturing apparatus, and the sample manufacturing device Download PDF

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JP2008215979A
JP2008215979A JP2007052393A JP2007052393A JP2008215979A JP 2008215979 A JP2008215979 A JP 2008215979A JP 2007052393 A JP2007052393 A JP 2007052393A JP 2007052393 A JP2007052393 A JP 2007052393A JP 2008215979 A JP2008215979 A JP 2008215979A
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sample
mask
ion
irradiation region
optical microscope
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JP4851365B2 (en
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Shunsuke Asahina
俊輔 朝比奈
Maki Kikuchi
真樹 菊地
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Jeol Ltd
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Jeol Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask for an ion milling sample manufacturing apparatus, capable of manufacturing a sample having a desired cross section of high positional accuracy, and to provide a sample manufacturing device. <P>SOLUTION: A mask of a several micron-several hundred micron unit is applied to the edge part of the mask for prescribing an ion irradiation region and an ion non-irradiation region and the positional relation of the mask, and the sample is confirmed, on the basis of the mark to facilitate the observation due to an optical microscope to manufacture a cross-sectional sample high in positional precision of about several microns. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、イオンミーリング試料作製装置においてイオン銃と試料間に配置されるマスク、及びそのイオンミーリング試料作製装置に関する。   The present invention relates to a mask disposed between an ion gun and a sample in an ion milling sample preparation apparatus, and an ion milling sample preparation apparatus thereof.

これまで、走査電子顕微鏡（ＳＥＭ）や透過電子顕微鏡（ＴＥＭ）で観察される試料を作製する装置として、たとえば特開２００５-６２１３１号公報（特許文献１）や、特開２００５-９１０９４号公報（特許文献２）に記載されているようなイオンミーリング装置が知られている。 特許文献１のイオンミーリング試料作製装置においては、図１に示すように、直線状の側面４を有する板状マスク３（遮蔽板）が試料ホルダ８に取り付けられ、イオン源１で発生したイオンビーム２が試料５を照射するように構成されている。マスク３の側面４を境界として試料５はエッチングされるので、図１中の斜線部分６が削り取られ新たな試料断面７が作製される。この試料断面７をＳＥＭやＴＥＭで観察をおこなう。   Up to now, as an apparatus for producing a sample observed with a scanning electron microscope (SEM) or a transmission electron microscope (TEM), for example, Japanese Patent Application Laid-Open No. 2005-62131 (Patent Document 1) and Japanese Patent Application Laid-Open No. 2005-91094 ( An ion milling device as described in Patent Document 2) is known. In the ion milling sample preparation apparatus of Patent Document 1, as shown in FIG. 1, a plate-like mask 3 (shielding plate) having a straight side surface 4 is attached to a sample holder 8, and an ion beam generated by the ion source 1. 2 is configured to irradiate the sample 5. Since the sample 5 is etched with the side surface 4 of the mask 3 as a boundary, the hatched portion 6 in FIG. 1 is scraped off and a new sample cross section 7 is produced. This sample cross section 7 is observed by SEM or TEM.

特開２００５-６２１３１JP 2005-62131 A 特開２００５-９１０９４JP2005-91094

さて、図２は図１で示されたイオンミーリング試料作製装置の試料５とマスク３の側面４近傍での位置関係を拡大して示してある。この装置には、マスク３の側面４のエッジ部２４を試料５上の目標物９の直上に正確に位置決めする為に照明光つきの可倒式の光学顕微鏡１０が配置されている。なお、この光学顕微鏡１０は、後に説明するように、試料５のイオンミーリング時にはイオンビーム光軸から退避可能に構成されている。   FIG. 2 is an enlarged view showing the positional relationship in the vicinity of the side surface 4 of the sample 5 and the mask 3 of the ion milling sample preparation apparatus shown in FIG. In this apparatus, a tiltable optical microscope 10 with illumination light is disposed in order to accurately position the edge portion 24 of the side surface 4 of the mask 3 directly above the target 9 on the sample 5. As will be described later, the optical microscope 10 is configured to be retractable from the ion beam optical axis when the sample 5 is ion milled.

前記光学顕微鏡１０を使用して試料５上の目標物９が、マスク３のエッジ部２４の下部に一致するように試料位置の調整を行い、目的物９の位置決めを行う。
この位置決めは、より正確な位置精度の断面試料を作製するため、光学顕微鏡１０の倍率を数十倍から数百倍程度にして数ミクロン単位での位置精度が要求される。 Using the optical microscope 10, the sample position is adjusted so that the target 9 on the sample 5 coincides with the lower portion of the edge 24 of the mask 3, and the target 9 is positioned.
In this positioning, in order to produce a cross-sectional sample with a more accurate positional accuracy, the optical microscope 10 is required to have a positional accuracy in the order of several microns with the magnification of the optical microscope 10 being several tens to several hundreds.

然しながら、この目標物９の直前には、ほぼ垂直に立ち上がった約１．５ｍｍの高さの側面４の壁が立ちはだかっており、光学顕微鏡１０での観察は、この１．５ｍｍの高さのマスク３のエッジ部２４の下部と試料５上の目的物９とが作り出すコーナー１１の極めて狭い範囲で行われ、あたかも、灯台の足元での観察と同様にきわめて観察し難いと言える。   However, the wall of the side surface 4 having a height of about 1.5 mm that stands up almost vertically stands immediately before the target 9, and the observation with the optical microscope 10 shows that the mask has a height of 1.5 mm. 3 is performed in a very narrow range of the corner 11 created by the lower part of the edge portion 24 and the object 9 on the sample 5, and it can be said that it is extremely difficult to observe as in the observation at the foot of the lighthouse.

側面４は目標物９の隅々までイオンビーム２が均等に照射され、正しく加工が行われるように、また、上方からの光学顕微鏡１０による観察を容易にするため、イオンビーム２の光軸に対し僅かながら角度が数度程度開いており、微かな台形形状であると共に鏡面の状態に研磨されている。   The side surface 4 is applied to the optical axis of the ion beam 2 so that the ion beam 2 is uniformly irradiated to every corner of the target 9 and processing is performed correctly, and in order to facilitate observation with the optical microscope 10 from above. On the other hand, the angle is slightly opened to several degrees, and it has a fine trapezoidal shape and is polished to a mirror surface.

その為、光学顕微鏡１０でのコーナー１１の観察では、試料５の目標物９の表面構造がエッジ部２４で反射し、エッジ部２４には目標物９の反射像が投影される。   Therefore, in the observation of the corner 11 with the optical microscope 10, the surface structure of the target 9 of the sample 5 is reflected by the edge portion 24, and a reflected image of the target 9 is projected on the edge 24.

この結果、光学顕微鏡１０での画像の中には、目標物９の表面像とエッジ部２４による目標物９の反射像が重なって観察されていた。このため従来においては、目標物９とマスク３のエッジ部２４との境界を明確に認識することが極めてむずかしかった。これらの理由により光学顕微鏡１０によるマスクと試料の位置合わせは、現状では+-１０ミクロン程度が限界であると言える。
本発明はこのような点に鑑みてなされたものであり、その目的は所望の断面を有する位置精度の高い試料を作製できるイオンミーリング試料作製装置用マスクおよび試料作製装置を提供することにある。 As a result, the surface image of the target 9 and the reflection image of the target 9 by the edge portion 24 were observed in the image with the optical microscope 10 in an overlapping manner. For this reason, in the prior art, it has been extremely difficult to clearly recognize the boundary between the target 9 and the edge 24 of the mask 3. For these reasons, it can be said that the alignment of the mask and the sample by the optical microscope 10 is currently limited to about + -10 microns.
The present invention has been made in view of these points, and an object of the present invention is to provide a mask for an ion milling sample preparation device and a sample preparation device capable of producing a sample having a desired cross section with high positional accuracy.

上記目的を達成する本発明のイオンミーリング試料作製装置用マスクは、試料面上にイオン照射領域とイオン非照射領域を形成するために、イオンビームが照射される試料面上に配置されるイオンミーリング試料作製装置用マスクであって、イオン照射領域とイオン非照射領域を規定するマスクのエッジ部に数ミクロンから数百ミクロン単位のマークを付けることにより、このマークに注目してマスクと試料の位置関係を確認することにより、光学顕微鏡での観察を容易にし、数ミクロン程度の位置精度の高い断面試料を作製することを特徴としている。   The mask for an ion milling sample preparation apparatus of the present invention that achieves the above object is provided by ion milling arranged on a sample surface irradiated with an ion beam in order to form an ion irradiation region and an ion non-irradiation region on the sample surface. This is a mask for a sample preparation device, and marks on the edge of the mask that define the ion irradiation region and ion non-irradiation region are marked in units of several microns to several hundred microns. By confirming the relationship, observation with an optical microscope is facilitated, and a cross-sectional sample with high positional accuracy of about several microns is produced.

従って本発明によれば、数ミクロンの位置精度の断面を有する試料を作製することのできるイオンミーリング試料作製装置用マスクおよび試料作製装置を提供する事ができる。   Therefore, according to the present invention, it is possible to provide a mask for an ion milling sample preparation device and a sample preparation device capable of producing a sample having a cross section with a positional accuracy of several microns.

以下、図面を用いて本発明の実施の形態について説明する。図３（Ａ），（Ｂ）は、本発明のイオンミーリング試料作製装置の一例を示した図である。（Ａ）はイオンミーリング試料作製装置を大気の状態にして、光学顕微鏡を使用して試料の位置合わせ、および試料とマスクの位置合わせを行う状態をしめしており、（Ｂ）は（Ａ）での調整を完了した後、真空排気を行い、イオンビームによる試料作製の状態を示している。（Ｂ）では、（Ａ）と構成が同一であるため、部品の符号は省略してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. 3A and 3B are views showing an example of an ion milling sample preparation apparatus according to the present invention. (A) shows the state where the ion milling sample preparation apparatus is in the atmospheric state, and the sample is aligned using the optical microscope, and the sample and the mask are aligned. (B) is (A) After completion of the adjustment, vacuum evacuation is performed to show a state of sample preparation by an ion beam. In (B), since the configuration is the same as (A), the reference numerals of parts are omitted.

（Ａ）において１２は真空チャンバであり、真空チャンバ１２の上部にはイオン銃１が取り付けられている。このイオン銃１としてガスイオン銃が用いられており、例えばＡｒガスを放電によりイオン化させてＡｒイオンを放出させるガスイオン銃が用いられている。   In (A), 12 is a vacuum chamber, and the ion gun 1 is attached to the upper part of the vacuum chamber 12. A gas ion gun is used as the ion gun 1, for example, a gas ion gun that releases Ar ions by ionizing Ar gas by discharge.

１３は試料ステージ引出機構であり、試料ステージ引出機構１３は、真空チャンバ１２に対し開閉可能に取り付けられている。（Ａ）は、試料ステージ引出機構１３が開けられた状態である。この試料ステージ引出機構１３の上には試料ステージ（傾斜ステージ）１４が取り付けられており、試料ステージ１４は傾斜軸Ｋ（傾斜軸ＫはＹ軸と一致）の周りに傾斜可能に試料ステージ引出機構１３に取り付けられている。１５は試料ステージ１４をＫ軸に対し傾斜させる為の傾斜駆動回路である。   Reference numeral 13 denotes a sample stage drawing mechanism, and the sample stage drawing mechanism 13 is attached to the vacuum chamber 12 so as to be openable and closable. (A) is a state in which the sample stage drawing mechanism 13 is opened. A sample stage (tilt stage) 14 is mounted on the sample stage pull-out mechanism 13, and the sample stage 14 can tilt around the tilt axis K (the tilt axis K coincides with the Y-axis). 13 is attached. Reference numeral 15 denotes an inclination driving circuit for inclining the sample stage 14 with respect to the K axis.

そして、前記試料ステージ１４上には試料位置調節機構１６が配置されており、試料位置調節機構１６はＸおよびＹ軸方向に移動可能に構成されている。さらにこの試料位置調節機構１６は、イオンビームの光軸即ちＺ軸の周りに回転可能に構成されている。また、本図では試料５を保持した試料ホルダ８が試料位置調節機構１６に取り付けられている。マスク位置調節機構１７が試料ステージ１４の上に設置されている。このマスク位置調節機構１７はＹ軸方向に移動可能に構成されている。マスク傾斜機構１８がマスク位置調節機構１７上に配置されており、マスク３を保持したマスク保持機構１９がマスク傾斜機構１８上に取り付けられ、軸Ｑを中心として点線で示したようにマスク３を跳ね上げる構造となっており、マスク３を跳ね上げて試料５の位置合わせをおこなうことができる。   A sample position adjusting mechanism 16 is arranged on the sample stage 14, and the sample position adjusting mechanism 16 is configured to be movable in the X and Y axis directions. Further, the sample position adjusting mechanism 16 is configured to be rotatable around the optical axis of the ion beam, that is, the Z axis. In this figure, a sample holder 8 holding the sample 5 is attached to the sample position adjusting mechanism 16. A mask position adjusting mechanism 17 is installed on the sample stage 14. The mask position adjusting mechanism 17 is configured to be movable in the Y axis direction. A mask tilting mechanism 18 is disposed on the mask position adjusting mechanism 17, and a mask holding mechanism 19 that holds the mask 3 is mounted on the mask tilting mechanism 18, and the mask 3 is moved as shown by a dotted line about the axis Q. It has a structure of flipping up, and the mask 5 can be flipped up to align the sample 5.

また、光学顕微鏡傾斜機構２０が試料ステージ引出機構１３の上端部に取り付けられている。そして照明光つき光学顕微鏡１０を保持した光学顕微鏡位置調節機構２１が、光学顕微鏡傾斜機構２０上に取り付けられている。即ち、光学顕微鏡位置調節機構２１は軸Ｒを中心として傾斜できる構造となっている。   An optical microscope tilting mechanism 20 is attached to the upper end portion of the sample stage pulling mechanism 13. An optical microscope position adjusting mechanism 21 holding the optical microscope 10 with illumination light is attached on the optical microscope tilting mechanism 20. That is, the optical microscope position adjusting mechanism 21 has a structure that can be tilted about the axis R.

このように、試料ステージ引出機構１３を大気中に引き出し、照明光つき光学顕微鏡１０を使用して試料上の目的物とマスクのエッジ部との位置合わせを行ったのち、試料ステージ引出機構１３を真空チャンバ１２に組み込み、真空排気装置２２で真空排気を行い、（Ｂ）で示されるようにイオンビームで試料作製が行われる。本図では、光学顕微鏡１０が光学顕微鏡傾斜機構２０により、イオン銃と干渉しないように、傾斜して示されている。   In this way, after pulling out the sample stage drawing mechanism 13 into the atmosphere and using the optical microscope 10 with illumination light to align the object on the sample with the edge portion of the mask, the sample stage drawing mechanism 13 is moved. The sample is built in the vacuum chamber 12, evacuated by the evacuation device 22, and a sample is prepared with an ion beam as shown in (B). In this figure, the optical microscope 10 is shown tilted by the optical microscope tilting mechanism 20 so as not to interfere with the ion gun.

図４は今回の発明におけるマスクのエッジ部平面と試料面で作り出すコーナーでの観察について詳しく示している。その特徴としてマスク３のエッジ部２４即ち、マスク側面４の試料側端部にはマーク２３がつけられている。本図では細長いマーク２３が複数、エッジ部２４のエッジ方向に沿って同一直線上につけられている場合について示している。   FIG. 4 shows in detail the observation at the corner created by the edge plane of the mask and the sample surface in the present invention. As a feature thereof, a mark 23 is provided on the edge portion 24 of the mask 3, that is, the sample side end portion of the mask side surface 4. This figure shows a case where a plurality of elongated marks 23 are provided on the same straight line along the edge direction of the edge portion 24.

図５では、本発明によるマークつきマスクと試料の位置決めの実施例を示している。図５（Ａ）では、マスク３の側面４のエッジ部２４にマーク２３として長さ７５ミクロン、幅５ミクロン、厚さ１ミクロンのメタルデポジションによるマークをＦＩＢデポジションにより形成したこと、そして、光学顕微鏡１０を使用して、このマスク３のエッジ部２４を試料５上の目標物９に正しく位置あわせを行う様子を示している。   FIG. 5 shows an embodiment of positioning of a marked mask and a sample according to the present invention. In FIG. 5A, a metal deposition mark having a length of 75 microns, a width of 5 microns, and a thickness of 1 micron is formed as a mark 23 on the edge 24 of the side surface 4 of the mask 3 by FIB deposition. A state in which the edge portion 24 of the mask 3 is correctly aligned with the target 9 on the sample 5 using the optical microscope 10 is shown.

図５（Ｂ）はその光学顕微鏡１０による画像を示している。本画像中Ｊで示される下半分の部分は目標物９の表面像であり、そして画像中Ｉで示される上半分の部分は、目標物９の表面像がマスク３のエッジ部２４に反射した反射像である。このように、目標物９の表面像とその反射像が同時に観察され、かつ、その表面像と反射像の境界の帯状部分Ｈは幅広い黒い部分で表示され、マスク３のエッジ２４と目標物９との正確な境界を見つけることが難しいことがわかる。   FIG. 5B shows an image obtained by the optical microscope 10. The lower half portion indicated by J in the main image is a surface image of the target 9, and the upper half portion indicated by I in the image reflects the surface image of the target 9 on the edge 24 of the mask 3. It is a reflection image. Thus, the surface image of the target 9 and its reflection image are observed simultaneously, and the band-like portion H at the boundary between the surface image and the reflection image is displayed as a wide black portion, and the edge 24 of the mask 3 and the target 9 are displayed. It is difficult to find the exact boundary.

本画像中のほぼ中央に矢印２３で示されたひときわ明るい水平方向の短い直線部分が観察されている、これがさきに説明したＦＩＢデポジションによるマークである。上部からの光学顕微鏡観察のための光照射により、マーク２３の厚さ方向での光の散乱が行われ、マーク２３の部分が明るい白線として黒い帯状の境界部分Ｈの中にコントラスト高く観察されることがわかる。   A particularly bright horizontal short straight line portion indicated by an arrow 23 is observed in the center of the main image, and this is the mark by the FIB deposition described above. Light irradiation in the thickness direction of the mark 23 is performed by light irradiation for optical microscope observation from above, and the portion of the mark 23 is observed as a bright white line in the black belt-like boundary portion H with high contrast. I understand that.

このように、マーク２３の明るい白線を基準として、マスク３のエッジ部分２４と試料５上の目標物９の境界を明確に知ることができ、正確な両者の位置合わせが可能となる。   In this way, the boundary between the edge portion 24 of the mask 3 and the target 9 on the sample 5 can be clearly known with the bright white line of the mark 23 as a reference, and accurate alignment between the two is possible.

もちろん、これらのマーク２３は、その大きさ、間隔などは光学顕微鏡の使用する倍率に対応した値であることが重要であり、数ミクロン高さで、長さ数十ミクロンから数百ミクロン程度でかつ狭い領域のコーナー１１での複雑な光の反射などを考慮し、数ミクロンの厚さを持った凸の構造を持つ事が好ましい。すなわち、マーク２３は、マスク３の側面４からの厚さが数ミクロン程度となるように側面４の試料側エッジ部２４に形成すべきである。   Of course, it is important that these marks 23 have values corresponding to the magnification used by the optical microscope, such as the size and interval, and are several microns high and several tens to several hundred microns long. In consideration of complicated light reflection at the corner 11 in a narrow area, it is preferable to have a convex structure having a thickness of several microns. That is, the mark 23 should be formed on the sample side edge portion 24 of the side surface 4 so that the thickness from the side surface 4 of the mask 3 is about several microns.

また、マーク２３の形成は集束イオンビーム（ＦＩＢ）によるメタルデポジションによる手法に限定されるものではなく、露光技術によるスパッタ膜付着手法、やメッキによる手法等を用いるようにしてもよい。   The formation of the mark 23 is not limited to a metal deposition method using a focused ion beam (FIB), and a sputtered film deposition method using an exposure technique, a plating method, or the like may be used.

従来のイオンミーリング試料作製装置を説明するための図である。It is a figure for demonstrating the conventional ion milling sample preparation apparatus. 従来のマスク位置合わせを説明するための図である。It is a figure for demonstrating the conventional mask position alignment. 従来のイオンミーリング装置を説明するための図である。It is a figure for demonstrating the conventional ion milling apparatus. 本発明のマーク付マスクを説明するための図である。It is a figure for demonstrating the mask with a mark of this invention. 本発明のマーク付マスクを説明するための図である。It is a figure for demonstrating the mask with a mark of this invention.

符号の説明Explanation of symbols

（同一または類似の動作を行うものには共通の符号を付す。）
１イオン源
２イオンビーム
３マスク
４側面
５試料
６削除部
７試料断面
８試料ホルダ
９目的物
１０光学顕微鏡
１１コーナー
１２真空チャンバ
１３ステージ引出機構
１４試料ステージ
１５傾斜駆動回路
１６試料位置調節機構
１７マスク位置調節機構
１８マスク傾斜機構
１９マスク保持機構
２０光学顕微鏡傾斜機構
２１光学顕微鏡位置調節機構
２２真空排気装置
２３マーク
２４エッジ部
Ｈ境界部分
Ｉ反射像
Ｊ表面像 (Those that perform the same or similar operations are denoted by a common reference.)
1 ion source 2 ion beam 3 mask 4 side surface 5 sample 6 deletion part 7 sample cross section 8 sample holder 9 object 10 optical microscope 11 corner 12 vacuum chamber 13 stage extraction mechanism 14 sample stage 15 tilt drive circuit 16 sample position adjustment mechanism 17 mask Position adjusting mechanism 18 Mask tilting mechanism 19 Mask holding mechanism 20 Optical microscope tilting mechanism 21 Optical microscope position adjusting mechanism 22 Vacuum exhaust device 23 Mark 24 Edge portion H Boundary portion I Reflected image J Surface image

Claims (5)

試料面上にイオンビーム照射領域とイオンビーム非照射領域を形成するために、イオンビームが照射される試料面上に配置されるイオンミーリング試料作製装置用マスクであって、試料面上にイオンビーム照射領域とイオンビーム非照射領域の境界を規定するマスクのエッジ部分に光学顕微鏡観察用のマークが形成されていることを特徴とするイオンミーリング試料作製装置用マスク。   A mask for an ion milling sample preparation device disposed on a sample surface irradiated with an ion beam to form an ion beam irradiation region and an ion beam non-irradiation region on the sample surface, the ion beam on the sample surface A mask for an ion milling sample preparation apparatus, wherein marks for observation with an optical microscope are formed at an edge portion of a mask that defines a boundary between an irradiation region and an ion beam non-irradiation region. 前記マスクはイオンビームにほぼ平行な側面を有し、その側面の試料側エッジ部によって前記境界が規定されており、その試料側エッジ部分に前記マークが付けられていることを特徴とする請求項1記載のイオンミーリング試料作製装置用マスク。   The mask has a side surface substantially parallel to the ion beam, the boundary is defined by a sample-side edge portion of the side surface, and the mark is attached to the sample-side edge portion. 2. A mask for an ion milling sample preparation apparatus according to 1. 前記マークは凸状に形成されていることを特徴とする請求項１または２記載のイオンミーリング試料作製装置用マスク。   3. The ion milling sample preparation apparatus mask according to claim 1, wherein the mark is formed in a convex shape. 前記マークは、前記エッジ部分のエッジ方向に沿って同一直線上に複数形成されていることを特徴とする請求項１から３の何れかに記載のイオンミーリング試料作製装置用マスク。   4. The mask for an ion milling sample preparation apparatus according to claim 1, wherein a plurality of the marks are formed on the same straight line along an edge direction of the edge portion. 5. 試料にイオンビームを照射するためのイオン銃と、試料面上にイオン照射領域とイオン非照射領域を形成するために、前記イオンビームが照射される試料面上に配置されるマスクとを備えた試料作製装置において、試料面上にイオン照射領域とイオン非照射領域の境界を規定する前記マスクのエッジ部分に、光学顕微鏡観察用のマークが形成されていることを特徴とする試料作製装置。   An ion gun for irradiating a sample with an ion beam, and a mask disposed on the sample surface irradiated with the ion beam to form an ion irradiation region and an ion non-irradiation region on the sample surface In the sample preparation device, a mark for optical microscope observation is formed on an edge portion of the mask that defines a boundary between an ion irradiation region and an ion non-irradiation region on the sample surface.
JP2007052393A 2007-03-02 2007-03-02 Mask for ion milling sample preparation device and sample preparation device Expired - Fee Related JP4851365B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016100111A (en) * 2014-11-19 2016-05-30 日本電子株式会社 Sample holder, sample manufacturing device, and alignment method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11218473A (en) * 1998-02-02 1999-08-10 Mitsubishi Electric Corp Method and device for preparing sample for section transmission electron microscope
JP2005055346A (en) * 2003-08-06 2005-03-03 Toshiba Corp Mask for manufacturing observation sample of electron microscope, manufacturing method and manufacturing apparatus of observation sample using mask
JP2005062131A (en) * 2003-08-20 2005-03-10 Jeol Ltd Mask for ion milling sample manufacturing apparatus and sample manufacturing apparatus
JP2005091094A (en) * 2003-09-16 2005-04-07 Jeol Ltd Device and method for preparing sample
JP2006098189A (en) * 2004-09-29 2006-04-13 Jeol Ltd Method and apparatus for producing sample
JP2007014996A (en) * 2005-07-08 2007-01-25 Hitachi High-Tech Science Systems Corp Ion milling device, and ion milling method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11218473A (en) * 1998-02-02 1999-08-10 Mitsubishi Electric Corp Method and device for preparing sample for section transmission electron microscope
JP2005055346A (en) * 2003-08-06 2005-03-03 Toshiba Corp Mask for manufacturing observation sample of electron microscope, manufacturing method and manufacturing apparatus of observation sample using mask
JP2005062131A (en) * 2003-08-20 2005-03-10 Jeol Ltd Mask for ion milling sample manufacturing apparatus and sample manufacturing apparatus
JP2005091094A (en) * 2003-09-16 2005-04-07 Jeol Ltd Device and method for preparing sample
JP2006098189A (en) * 2004-09-29 2006-04-13 Jeol Ltd Method and apparatus for producing sample
JP2007014996A (en) * 2005-07-08 2007-01-25 Hitachi High-Tech Science Systems Corp Ion milling device, and ion milling method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016100111A (en) * 2014-11-19 2016-05-30 日本電子株式会社 Sample holder, sample manufacturing device, and alignment method

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