JP2008205508A - Substrate carrier, and vacuum processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate carrier for carrying a chucked insulating substrate. <P>SOLUTION: A chucking device 23 having electrodes of 4 mm wide arranged at an interval of 2 mm or less is fixed to the arm 22 of a substrate carrier 20. Since a big gradient force is obtained, an insulating substrate 11 can be chucked. The insulating substrate 11 can be carried in a suspended state or standing state. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate transfer apparatus, and more particularly to a substrate transfer apparatus that can transfer an insulating substrate while adsorbing the insulating substrate.

Conventionally, a substrate transfer robot has been used for loading and unloading a substrate into and from a vacuum apparatus.
Reference numeral 110 in FIG. 10A denotes a vacuum processing apparatus (sputtering apparatus), which includes a vacuum chamber 112 and a substrate transfer apparatus 120. A cathode electrode 113 is disposed on the ceiling side in the vacuum chamber 112, and a substrate adsorption device 114 is disposed on the bottom wall side.

  The substrate transfer device 120 includes a driving device 121, an arm portion 122 attached to the driving device 121, and a placement portion 123 attached to the tip of the arm portion 122.

  When the substrate is carried into the vacuum chamber 112, the substrate 111 is placed on the placement unit 123, the arm unit 122 is moved horizontally, and the substrate 111 is stopped on the substrate suction device 114.

  Next, the lifting mechanism 106 arranged at the bottom of the vacuum chamber 112 is operated to transfer the substrate 111 from the placement unit 123 onto the substrate suction device 114.

As shown in FIG. 11, the substrate attracting device 114 has two electrodes 131 ₁ and 131 ₂ disposed in a dielectric 130. When a positive and negative voltage is applied between the electrodes 131 ₁ and 131 ₂ , 111 serves as an electrode, and capacitors 132 ₁ and 132 ₂ are formed between the substrate 111 and the electrodes 131 ₁ and 131 ₂ , respectively. An electrostatic attracting force is generated between the electrodes of the capacitors 132 ₁ and 132 ₂ , whereby the substrate 111 is electrostatically attracted to the surface of the dielectric 130. FIG. 10B shows this state.

  10B, the arm portion 122 and the mounting portion 123 are extracted from the vacuum chamber 112, the vacuum chamber 112 is sealed, a sputtering gas is introduced, and the target disposed on the cathode electrode 113 is sputtered.

  As described above, when the substrate 111 is transported on the placement unit 123 of the substrate transport apparatus 120, the substrate 111 is placed on the recess of the placement unit 123. When it is desired to move at high speed, it is necessary to mechanically clamp on the mounting portion 123 or to arrange the substrate suction device as described above on the mounting portion 123 and transport the substrate 111 while electrostatically attracting. There is.

  However, in the case of a large glass substrate for a liquid crystal display, since the substrate is made of an insulating material, a capacitor is not formed between the substrate and the substrate transport using the substrate suction device as indicated by reference numeral 114 above. The device cannot be used.

Therefore, in the substrate transport apparatus of the prior art, the glass substrate is mechanically clamped and transported, but the edge portion of the substrate may be damaged, causing a decrease in yield.
Japanese Patent Laid-Open No. 02-288352 Japanese Patent Laid-Open No. 06-061334

  The present invention was created to solve the above-described problems of the prior art, and an object of the present invention is to provide a substrate transfer apparatus that can transfer an insulating substrate while adsorbing it.

  When the substrate is placed on a conventional adsorption device, a dielectric layer exists between the electrode and the substrate, and thus the substrate and the electrode form a capacitor with the dielectric layer interposed therebetween. Therefore, when a voltage is applied between the substrate and the electrode, charges having opposite polarities are generated on the electrode and the substrate, a Coulomb force is developed between the two, and the substrate is adsorbed by the adsorption device.

Generally, the electrostatic attraction force F is expressed by the following formula.
F = 1/2 · a · (V / d) ²
a is a constant depending on the dielectric constant, V is the voltage, and d is the thickness of the dielectric layer (distance between the electrodes).

As the dielectric, a material having a high dielectric constant such as Al ₂ O ₃ , AlN, SiC, sialon, diamond, polyimide, silicone rubber or the like is used.

The above equation is an adsorption force considering only the dielectric polarization phenomenon, and the obtained adsorption force is very small. Therefore, conventionally, the dielectric layer has a resistivity of about 10 ⁸ to 10 ¹² Ω · cm, a minute leakage current is generated between the substrate and the electrode, and a large adsorption force due to the Johnsen-Rahbek effect has been obtained.

  In the case of a glass substrate, it is possible to adjust the purity and flow a leakage current. However, since a glass substrate used for a liquid crystal display device or the like is required to have a high purity with very few impurities, the leakage current is low. It does not flow and the Johnsen Rabeck effect cannot be obtained.

  Further, since the Johnsen-Rahbek effect depends on the resistivity, the adsorption force also changes when the substrate temperature changes. In particular, in recent years, since the substrate temperature changes from a high temperature of several hundred degrees to a low temperature around −100 ° C., the adsorption force due to the Johnsen-Rahbek effect tends to become unstable.

  Thus, the inventors of the present invention have focused on the gradient force and have completed the present invention. The gradient force is a force acting on a dielectric in a non-uniform electric field. When a dielectric having a polarizability α is placed in a non-uniform electric field E, the dielectric is expressed by the following equation per unit volume. The gradient power that works is working.

f = 1/2 · α · grad (E ² )
Therefore, an electrode may be arranged so that grad (E ² ) becomes large with respect to a dielectric such as a glass substrate. The following table shows the comparison results of the adsorptive power when using the electrode of the prior art and when using the electrode of the present invention.

Electrode of the present invention: electrode width 4 mm, distance between electrodes 1 mm
Conventional electrode: electrode width 8 mm, distance between electrodes 2 mm
Dielectric layer… Al ₂ O ₃
Volume resistivity of dielectric layer: 10 ¹² Ω · cm
Dielectric layer thickness: 500μm
Substrate material ... Soda lime glass Size of substrate ... 100x100x5mm
Substrate volume resistivity: 10 ¹⁷ Ω · cm (room temperature)
As can be seen from Table 1 above, the electrode used in the present invention has an adsorption power 1.5 times that of the prior art electrode.

When the specific gravity of the glass is 3 g / cm ³ , the load of the substrate used in the experiment is 150 g. However, the adsorption force of the electrode used in the present invention is as follows when the applied voltage is ± 5 kV (voltage between the electrodes). 10 kV) and 45 kgf or more in terms of the substrate, it can be seen that the substrate having a thickness equal to or larger than the thickness of the substrate used in the experiment can be adsorbed in a suspended state.

The present invention has been created based on the above findings, the invention described in the claim 1, an arm portion that is movable in, provided in the arm portion, by the movement of the arms A substrate transport apparatus having a suction device configured to move, wherein the suction device is provided with first and second electrodes having a width of 4 mm or less and an interval of 2 mm or less. The second electrode is connected to a power source capable of forming an electric field of at least 1.0 × 10 ⁶ V / m or more between the first and second electrodes, and the first and second electrodes are Provided on the suction surface facing downward of the suction device, a voltage is applied between the first and second electrodes by the power source, the insulating substrate is sucked on the suction surface in a vacuum atmosphere, and the insulating substrate is suspended. A substrate transfer device configured to be able to move the suction device while being lowered. That.
According to a second aspect of the invention, there is provided a substrate transfer apparatus according to claim 1, wherein the first, on the surface of the second electrode is disposed the dielectric layers, when adsorbing the insulating substrate to the suction surface In addition, the insulating substrate is a substrate transfer device configured to be in contact with the dielectric layer.
According to a third aspect of the invention, there is provided a substrate transfer apparatus according to claim 1, wherein the surface of said first, second electrodes are exposed, when adsorbing the insulating substrate to the suction surface, said insulating substrate Is a substrate transfer device configured to come into contact with the first and second electrodes.
Fourth aspect of the present invention, there is provided a substrate transfer apparatus according to claim 1, wherein the first, between the second electrode projections are provided, upon adsorbing the insulating substrate to the suction surface, The substrate transfer apparatus is configured such that the insulating substrate is in contact with the protrusion and a gap is formed between the insulating substrate and the first and second electrodes.
Invention of claim 5, wherein, a substrate transfer apparatus according to any one of claims 1 to 4, wherein the suction device is provided with a plurality of said arms, the suction surface of the respective adsorbers The substrate transfer device is configured to have the same height and be configured to be able to suck one piece of the insulating substrate by each of the suction devices.
A sixth aspect of the present invention is the substrate transfer apparatus according to the fifth aspect , wherein the substrate transfer apparatus is configured to be able to supply a voltage to the desired suction apparatus among the plurality of suction apparatuses.
Invention of claim 7, wherein a vacuum chamber having a substrate transfer apparatus according to any one of claims 1 to 6, hung by adsorbing the insulating substrate by the substrate transfer device, the It is a vacuum processing apparatus configured to carry an insulating substrate into and out of the vacuum chamber.
Invention of Claim 8 has a vacuum chamber and the board | substrate conveyance apparatus of any one of Claim 1 thru | or 6 , The said adsorption | suction apparatus is arrange | positioned in the said vacuum chamber, In the said vacuum chamber, Vacuum processing configured to adsorb and move the insulating substrate to the adsorption device and to align the adsorbed insulating substrate with another substrate arranged below the insulating substrate Device.

  Note that a material such as aluminum oxide, aluminum nitride, silicon carbide, sialon, diamond, polyimide, or silicone rubber can be used as the dielectric for disposing the first and second electrodes used in the present invention.

  Further, when the potential of the vacuum chamber or the transfer chamber is set to the ground potential, a positive voltage may be applied to one of the first and second electrodes, and a negative voltage may be applied to the other. Alternatively, either the positive voltage or the negative voltage may be applied to one of the first and second electrodes, and the other electrode may be set to the ground potential.

In that case, it was experimentally confirmed that an insulating substrate having a size with no practical problem can be adsorbed by setting the electric field between the first and second electrodes to 1.0 × 10 ⁶ V / m or more. ing. In particular, when the insulating substrate is erected or suspended, increasing the applied voltage and increasing the electric field formed will improve safety and avoid the risk of the substrate falling or falling. Can do.

The insulating substrate can be conveyed while adsorbed in a vacuum atmosphere.
In particular, since the insulating substrate can be conveyed in a standing posture or suspended, it can be used for various processes.
In addition, since the insulating substrate can be aligned in a vacuum atmosphere, sealing the panel for display without removing the film-forming surface into the atmosphere when the vacuum-treated substrate and the substrate are bonded and sealed in a vacuum atmosphere can do.
Further, when a plurality of adsorption devices are used, a plurality of small adsorption devices can be arranged to adsorb a large insulating substrate.

A substrate transfer apparatus of the present invention will be described with reference to the drawings.
Referring to FIG. 1, reference numeral 10 denotes a vacuum processing apparatus according to an example of the present invention, and reference numeral 20 denotes an example of a substrate transfer apparatus according to the present invention.

  The vacuum processing apparatus 10 includes a vacuum chamber 12 and a transfer chamber 15, a cathode electrode 13 is disposed on the ceiling side of the vacuum chamber 12, and a mounting table 14 is disposed on the bottom wall.

  In the transfer chamber 15, the above-described substrate transfer device 20 is disposed. The substrate transfer device 20 includes a driving device 21, an arm portion 22, and a suction device 23.

  A motor (not shown) is disposed in the drive device 21, and one end of the arm portion 22 is connected to the motor, and is configured to be able to extend and contract in the horizontal plane and move in the vertical direction. Yes.

  The suction device 23 is provided at the other end of the arm portion 22 and is configured to move in the horizontal direction and the vertical direction as the arm portion moves.

A sectional view of the adsorption device 23 is shown in FIG. The adsorption device 23 includes a metal plate 24 and a dielectric 25 disposed on the metal plate 24. This dielectric is made of ceramics mainly composed of Al ₂ O ₃ , and first and second electrodes 27 ₁ and 27 ₂ are embedded therein.

A plan view of the first and second electrodes 27 ₁ and 27 ₂ is shown in FIG. The first and second electrodes 27 ₁ and 27 ₂ are formed in a comb shape, and are arranged so that their tooth portions mesh with each other. FIG. 6A corresponds to a cross-sectional view taken along line AA in FIG. The widths of the first and second electrodes 27 ₁ and 27 ₂ are 4 mm, and the distance between the electrodes is 1 mm.

_On the surfaces of the first and second electrodes 27 ₁ and 27 ₂ , a dielectric layer 26 having a thickness of 500 μm or less (for example, 400 μm) constituted by the dielectric 25 is disposed.

A sputtering power source 16, a suction power source 17, and a computer 18 are disposed outside the vacuum chamber 12 and the transfer chamber 15. The cathode electrode 13 is connected to a sputtering power source 16, and the first and second electrodes 27 ₁ and 27 ₂ are connected to an adsorption power source 17.

  An unillustrated unloading / unloading chamber is connected to the transfer chamber 15, and when performing a sputtering operation, an insulating substrate to be deposited is placed in the load / unload chamber, and the vacuum chamber 12, the transfer chamber 15, Keep the entrance and vacuum atmosphere.

  The sputter power supply 16 and the suction power supply 17 are connected to a computer 18. First, the substrate transport device 20 is operated by the computer 18 to place an insulating substrate placed in the carry-in / out chamber on the suction device 23.

Next, the suction power source 17 is activated, and a voltage having a predetermined magnitude is applied between the _first and _second electrodes 27 ₁ and 27 ₂ .

The vacuum chamber 12 and the transfer chamber 15 are connected to a ground potential. A positive voltage is applied to one of the first and second electrodes 27 ₁ and 27 _{2 and} a negative voltage is applied to the other with respect to the ground potential. When an electric field of 1.0 × 10 ⁶ V / m or more is formed inside the insulating substrate by application, the insulating substrate is adsorbed on the surface of the dielectric layer 26.

  FIG. 3 is a diagram schematically showing the state. The code | symbol 11 has shown the insulating board | substrate (here glass substrate) arrange | positioned on the adsorption | suction apparatus 23, and the code | symbol E has shown the electric field. The symbol f indicates the direction of the gradient force acting on the insulating substrate 11.

  In this state, the arm portion 22 is expanded and contracted, and the insulating substrate 11 is taken out from the carry-in / out chamber and carried into the vacuum chamber 12. At that time, since the insulating substrate 11 is strongly adhered to the surface of the adsorption device 23, the insulating substrate 11 does not fall off the adsorption device 20 even if the adsorption device 20 is moved at a high speed. Moreover, since the insulating substrate 11 is not mechanically clamped, dust is not generated by the clamp and the end portion is not chipped.

FIG. 1 shows a state in which the insulating substrate 11 is stationary on the mounting table 14.
In this state, the application of voltage to the _first and second electrodes 27 ₁ and 27 ₂ is stopped and the suction to the insulating substrate 11 is released. Then, the suction device 23 is lowered to place the insulating substrate 11 on the mounting table 14. Move up.

  Next, the adsorption device 23 and the arm portion 22 are extracted from the vacuum chamber 12, the space between the vacuum chamber 12 and the transfer chamber 15 is closed, and argon gas is introduced in a state where the vacuum chamber 12 is sealed.

  When the inside of the vacuum chamber 12 is stabilized at a predetermined pressure, the sputtering power source 16 is activated by the computer 18, a voltage is applied to the cathode electrode 13, and the target disposed on the cathode electrode 13 is sputtered. A thin film such as a metal thin film can be formed on the surface 10 (the surface of the insulating substrate 11).

In the adsorption device 23, the dielectric layer 26 is disposed on the surfaces of the _first and second electrodes 27 ₁ and 27 _2. However, in the adsorption device 31 of FIG. 4A, the first and second electrodes are arranged. The electrodes 27 ₁ and 27 ₂ are exposed on the surface of the dielectric 25. Further, the adsorption device 32 of FIG. 5B has a structure in which the bottom surface portions of the first and second electrodes 27 ₁ and 27 ₂ are cut into the surface of the dielectric 25.

When the insulating substrate 11 is disposed on the adsorption devices 31 and 32, the insulating substrate 11 is in direct contact with the first and second electrodes 27 ₁ and 27 _2, and the insulating substrate 11 is the first. Since the second electrodes 27 ₁ and 27 ₂ are very close to each other, a large gradient force can be obtained. In this case, since no current flows through the insulating substrate 11, the first and second electrodes 27 ₁ and 27 ₂ are not short-circuited.

Next, the adsorption device 33 in FIG. 3C has a structure in which the surfaces of the _first and _second electrodes 27 ₁ and 27 ₂ are formed at the same height as the surface of the dielectric 25. When the insulating substrate 11 is disposed on the adsorption device 33, the back surface of the insulating substrate 11 is in contact with the first and second electrodes 27 ₁ and 27 ₂ and the surface of the dielectric 25.

The adsorbing device 34 in FIG. 4D has a structure in which _first and _second electrodes 27 ₁ and 27 ₂ are disposed in a groove 28 formed on the surface of the dielectric 25. The surfaces of the first and second electrodes 27 ₁ , 27 ₂ are located on the deeper part of the groove 28 than the surface of the dielectric 25. Eventually, the first and second electrodes 27 ₁ , 27 are located. Between the _{two, a} projecting portion 29 made of a material constituting the dielectric 25 is arranged.

Since the tip portion of the protrusion 29 has the same height, when the insulating substrate 11 is arranged on the suction device 34, the back surface of the insulating substrate 11 is brought into contact with the tip of the protrusion 29, and the first portion A gap is formed between the second electrodes 27 ₁ and 27 ₂ .

  A substrate transfer apparatus in which the suction devices 31 to 34 shown in FIGS. 4A to 4D are attached to the tip of the arm portion 22 is also included in the present invention.

Further, the pattern of the first and second electrodes is not limited to the pattern of the first and second electrodes 27 ₁ and 27 ₂ shown in FIG.

The adsorption device 35 in FIG. 5A has a comb-like shape, and has first and second electrodes 41 ₁ and 41 _{2 in} which the comb teeth are arranged concentrically. The comb teeth of the first and second electrodes 41 ₁ and 41 ₂ are alternately arranged in a state of being insulated from each other.

The adsorbing device 36 in FIG. 5B has eight electrodes. The eight electrodes include four first electrodes 42A ₁ , 42B ₁ , 42C ₁ , 42D ₁ to which voltages having the same polarity are applied, and four voltages to which voltages having different polarities are applied. The second electrode 42A ₂ , 42B ₂ , 42C ₂ , 42D ₂ is constituted. The magnitude of the applied voltage can be arbitrarily set as required.

The first electrodes 42A ₁ , 42B ₁ , 42C ₁ , 42D ₁ and the second electrodes 42A ₂ , 42B ₂ , 42C ₂ , 42D ₂ are patterned in a comb shape, and the comb teeth are concentric. Arranged in a shape. The first electrodes 42A ₁ , 42B ₁ , 42C ₁ , 42D ₁ and the comb electrodes of the second electrodes 42A ₂ , 42B ₂ , 42C ₂ , 42D ₂ are alternately arranged so as to engage with each other without contact. Has been.

The adsorbing device 37 in FIG. 5C is a device in which first and second electrodes 43 ₁ and 43 ₂ are arranged in a double spiral shape.

  A substrate transfer device in which the suction devices 35 to 37 are attached to the tip of the arm portion 22 is also included in the present invention.

  As described above, as shown in FIG. 6, the case where the film formation surface 10a of the insulating substrate 11a to be transported is directed vertically upward has been described, but the substrate transport apparatus of the present invention is not limited thereto.

  Like the insulating substrate 11b in the standing posture in the figure, the film formation surface 10b can be transported even in the horizontal direction.

  In this case, the suction surfaces of the suction devices 23 and 31 to 37 may be made vertical and the surface opposite to the film formation surface 10b of the insulating substrate 11b may be sucked.

  In addition, the film-forming surface 10c of the substrate 11c in the figure is directed vertically downward. However, when the substrate 11c in this posture is transported, the suction surfaces (first and second electrodes of the suction devices 23, 31 to 37). The formed surface) may be directed downward, and the surface of the substrate 11c opposite to the film forming surface 10c may be adsorbed. In this case, the substrate 11c is transported in a suspended state.

  Since it is difficult to manufacture a large ceramic plate (dielectric 25), it is difficult to transport a large insulating substrate with the substrate transport apparatus described above.

On the other hand, the substrate transport device 53 of FIG. 7 is provided with a plurality of suction devices 38 _{1 to} 38 ₉ (here, nine) on the arm portion 52. Each adsorber 38 _{1-38 9} in the configuration of any of the above adsorber 23,31～37 is employed, the suction surface of the suction device 38 ₁ to 38 ₉ are arranged on the same plane . Accordingly, in the substrate transfer apparatus 53, using the suction device 38 ₁ to 38 ₉ small, as shown in FIG. 8, can adsorb a large insulating substrate 11d.

  Further, in the two substrate transfer devices 54 and 55 shown in FIG. 9, the suction devices 39 and 40 are attached to the tips of the arm portions 57 and 58, respectively. Also for the adsorption devices 39 and 40, any one of the above-described adsorption devices 23 and 31 to 37 is adopted, the adsorption surface of one adsorption device 39 is directed vertically downward, and the adsorption of the other adsorption device 40 is adopted. The surface is oriented vertically upward.

  When the insulating substrate 11e is adsorbed and suspended on one adsorption device 39, and the insulating substrate 11f is arranged and adsorbed on the other adsorption device 40, the two insulating substrates 11e and 11f face each other horizontally.

  In this state, the two insulating substrates 11e and 11f are moved relative to each other in the horizontal direction, and when the suction devices 39 and 40 are moved in the vertical direction in the aligned state, the two insulating substrates 11e and 11f are moved. The film formation surfaces 10e and 10f can be bonded together.

  At this time, the film formation surfaces 10e and 10f are not in contact with the adsorption devices 39 and 40, and the state immediately after the vacuum processing is maintained. The film-forming surfaces 10e and 10f do not have to be flat, for example, grooves are patterned, and a fluorescent material or the like may be applied. Furthermore, the film formation surfaces 10e and 10f are not limited to the surface on which the thin film is formed, but include a wide range of surfaces to be vacuum processed.

  Although the vacuum processing apparatus 10 is a sputtering apparatus, the substrate transfer apparatuses 23 and 53 to 55 according to the present invention are apparatuses that perform vacuum processing on an object to be processed in a vacuum such as a CVD apparatus, an etching apparatus, or an ion implantation apparatus. Besides, it can be widely used in an apparatus for aligning an insulating substrate in a vacuum atmosphere.

In addition, the electric field strength between the first and second electrodes of the present invention should be as large as possible without causing dielectric breakdown, and it is desirable to form an electric field having a strength of 1.0 × 10 ⁶ V / m or more.

  Therefore, it is desirable that the distance between the first and second electrodes be narrow as long as dielectric breakdown does not occur. The first and second electrodes are made of, for example, conductive carbon, and can be formed by a screen printing method or a method of forming a film using a mask (PVD, CVD, ion implantation). Moreover, it can form using an etching technique. The degree to which the distance between the electrodes can be made close by any forming method depends on the patterning accuracy of each forming method.

  Further, the longer the length of the portion where the first and second electrodes face each other, the greater the adsorption force. Therefore, it is desirable that the electrode width is narrow. How much the width can be reduced depends on the patterning accuracy.

The figure which shows an example of the board | substrate conveyance apparatus and vacuum processing apparatus of this invention (a): Cross-sectional view of an example of an adsorption device used in the present invention (b): A diagram showing patterns of the first and second electrodes Illustration for explaining the state of electric field formation (a)-(d): Sectional drawing of 2nd example-5th example of adsorption | suction apparatus used for this invention (a)-(c): The figure for demonstrating the 2nd example-the 4th example of the 1st, 2nd electrode arrangement | positioning method of the adsorption | suction apparatus used for this invention. Diagram showing insulating substrates in various positions Example of substrate transfer device with multiple suction devices The figure which shows the state which made the board | substrate conveyance apparatus adsorb the insulating board | substrate The figure which shows the example which applied the board | substrate conveyance apparatus of this invention to position alignment (a), (b): The figure for demonstrating the board | substrate conveyance apparatus of a prior art (a), (b): The figure for demonstrating the conventional electrostatic attraction apparatus using Coulomb force

Explanation of symbols

20, 53 to 55... Substrate transfer device 22, 52, 57, 58... Arm portion 23, 31 to 40... Attracting device 26 .. dielectric layers 27 ₁ , 41 ₁ , 42 A ₁ , 42 B ₁ , 42 C ₁ , 42D ₁ , 43 ₁ ...... first electrode 27 ₂ , 41 ₂ , 42A ₂ , 42B ₂ , 42C ₂ , 42D ₂ , 43 ₂ ...... second electrode 29 ...... projection 10 ...... vacuum processing apparatus 11 , 11a to 11f …… Insulating substrate 12 …… Vacuum chamber 17 …… Power supply

Claims (17)

An arm configured to be movable;
A substrate transfer device provided on the arm portion and having a suction device configured to be movable by movement of the arm portion,
The adsorption device is provided with first and second electrodes having a width of 4 mm or less and an interval of 2 mm or less,
The adsorption apparatus is a substrate transfer apparatus configured to be movable with a voltage applied between the first and second electrodes. A dielectric layer is disposed on the surfaces of the first and second electrodes, and when a substrate is brought into close contact with the surface of the adsorption device, a dielectric layer is interposed between the first and second electrodes and the substrate. The substrate transfer apparatus according to claim 1, wherein the substrate transfer apparatus is configured to exist. 2. The structure according to claim 1, wherein the surfaces of the first and second electrodes are exposed, and the first and second electrodes are in contact with the substrate when the substrate is brought into close contact with the adsorption device. Substrate transfer device. A protrusion is provided between the first and second electrodes, and when the substrate is brought into close contact with the suction device, the substrate is brought into contact with the protrusion, and the substrate and the first and second electrodes The substrate transfer apparatus according to claim 1, wherein a gap is formed between the electrodes. 5. The substrate transfer apparatus according to claim 1, wherein a plurality of the adsorption devices are provided, wherein the surfaces of the adsorption devices are substantially the same height, and a desired one of the adsorption devices. A substrate transfer device configured to supply a voltage to the substrate. 6. The apparatus according to claim 1, further comprising: a power source configured to form an electric field of at least 1.0 × 10 ⁶ V / m between the first and second electrodes. The substrate transfer apparatus according to 1. A vacuum chamber; and a substrate transfer device according to any one of claims 1 to 6,
A vacuum processing apparatus configured to allow the insulating substrate to be carried into or out of the vacuum chamber in a state where the insulating substrate is adsorbed onto the adsorption device of the substrate transfer apparatus. A vacuum chamber; and a substrate transfer device according to any one of claims 1 to 6,
At least the suction device is disposed in the vacuum chamber, the vacuum chamber is placed in a vacuum atmosphere, the insulating substrate is sucked by the suction device, and the insulating substrate is suspended in the vacuum chamber. Constructed vacuum processing equipment. The other board | substrate is arrange | positioned under the said suspended insulation board | substrate, and it was comprised so that the relative alignment of the said suspended board | substrate and the said other board | substrate could be performed. Vacuum processing equipment. An arm configured to be movable;
A substrate transfer device having a suction device provided on the arm portion and configured to move by movement of the arm portion,
The adsorption device is provided with first and second electrodes having a width of 4 mm or less and an interval of 2 mm or less,
A power source capable of forming an electric field of at least 1.0 × 10 ⁶ V / m or more is connected between the first and second electrodes, the first and second electrodes,
The first and second electrodes are provided on a suction surface facing downward of the suction device, a voltage is applied between the first and second electrodes by the power source, and the suction surface is applied to the suction surface in a vacuum atmosphere. A substrate transfer device configured to move the suction device while sucking the insulating substrate and suspending the insulating substrate.   A dielectric layer is disposed on the surfaces of the first and second electrodes, and the insulating substrate is configured to come into contact with the dielectric layer when the insulating substrate is attracted to the attracting surface. 10. The substrate transfer apparatus according to 10.   11. The surfaces of the first and second electrodes are exposed, and the insulating substrate is configured to contact the first and second electrodes when the insulating substrate is adsorbed on the adsorption surface. The board | substrate conveyance apparatus of description.   A protrusion is provided between the first and second electrodes, and when the insulating substrate is adsorbed on the adsorption surface, the insulating substrate is brought into contact with the protrusion, and the insulating substrate and the first, The board | substrate conveyance apparatus of Claim 10 comprised so that a clearance gap might be formed between 2nd electrodes.   The said arm part is provided with two or more said adsorption | suction apparatuses, The said adsorption | suction surface of each said adsorption | suction apparatus is made the same height, It was comprised so that the said one insulating substrate could be adsorb | sucked by each said adsorption | suction apparatus. The board | substrate conveyance apparatus of any one of Claim 13.   The substrate transfer apparatus according to claim 14, wherein a voltage can be supplied to a desired suction apparatus among the plurality of suction apparatuses. A substrate transfer device according to any one of claims 10 to 15 having a vacuum chamber,
A vacuum processing apparatus configured to adsorb and suspend the insulating substrate by the substrate transfer device so that the insulating substrate can be carried into and out of the vacuum chamber. A substrate transport device according to any one of claims 10 to 15 having a vacuum chamber,
The adsorption device is disposed in the vacuum chamber,
In the vacuum chamber, the insulating substrate is adsorbed and moved by the adsorption device,
A vacuum processing apparatus configured to perform alignment between the adsorbed insulating substrate and another substrate disposed below the insulating substrate.

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