JP2008203634A - Creation method for photomask data, photomask and pattern forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To pattern a patterning object layer with high accuracy even when a plurality of regions of different compositions are present in the patterning object layer where desired patterns are to be formed. <P>SOLUTION: A creation method for photomask data aims to form a photomask to be used to expose a photoresist film formed on a patterning object layer which has a plurality of regions of different compositions and which is to be etched into a desired pattern. The method includes a step of creating the photomask data of the photomask to be formed by correcting the basic pattern data of patterns to be formed in the respective regions of different compositions in the patterning object layer by using the following shift amounts. They are: a first shift amount generated by the difference in etching states of the regions of different compositions depending on the distance between patterns of resist patterns formed on the respective regions of different compositions; and a second shift amount generated by the difference in an etching state of the photoresist film depending on the distance between patterns of the photomask. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a photomask data creation method, a photomask produced using the method, and a pattern formation method for forming a desired pattern on a patterning layer using the photomask.

When forming a device pattern on the patterning layer, the following steps are generally performed. First, a photoresist film is formed on a layer to be patterned, and the photoresist film is exposed using a photomask formed in a design pattern and developed by etching to form a resist pattern. Thereafter, the patterning layer is etched using the resist pattern as a mask to pattern the patterning layer.
At this time, it is important to pattern the layer to be patterned according to the design pattern, but as the device pattern becomes finer, it becomes difficult to faithfully form the pattern due to factors that adversely affect patterning that occurs in each process. As a result, there is a problem that the final finished pattern does not follow the design pattern. In particular, the optical proximity effect that occurs in lithography, which is the most important for achieving microfabrication, and the process proximity effect that occurs in the etching process (etching density effect) greatly affect the dimensional accuracy of the final pattern with respect to the desired pattern. It is thought that there is.

  Here, the optical proximity effect means that when the photoresist film is exposed, if the adjacent patterns of the photomask are close to each other, the light passing through the photomask interferes with each other, and the light intensity between the patterns changes to follow the pattern. This is a phenomenon in which a line width shift (litho shift) occurs as a result of no exposure. In addition, the process proximity effect is a phenomenon in which, when etching a film to be etched, the amount of by-product produced by the etching reaction differs depending on the pattern density of the resist pattern, resulting in a shift in the line width (etching shift). That is.

  FIG. 1 is a graph showing the optical proximity effect. According to this graph, when the distance between photomask patterns is longer than a specific distance, the line width of the resist pattern becomes narrower (shifted) than the pattern line width of the photomask. On the other hand, if the distance between patterns is shorter than the specific distance, the resist pattern line width becomes narrower than the photomask pattern line width (shift amount becomes negative). You can see that FIG. 1 shows the case of a positive resist.

  FIG. 2 is a graph showing the process proximity effect. According to this graph, when the distance between the patterns of the resist pattern is longer than a specific distance, the pattern line width of the patterned layer after etching is larger than the line width of the resist pattern. Tend to be thicker (shift amount becomes positive), and conversely, if the inter-pattern distance is shorter than the specific distance, the pattern line width of the patterned layer after etching becomes narrower than the line width of the resist pattern ( It can be seen that the shift amount tends to be negative.

For this reason, technologies to improve the dimensional accuracy of the finished pattern after processing have been studied, and optical proximity correction (OPC) technology that corrects dimensional variations that occur in the lithography process with patterns and dimensional variations that occur in the etching process are patterned. A process proximity effect correction (PPC) technique or the like that is corrected by (1) is reported (for example, see Patent Documents 1 and 2).
The OPC technique is a technique for correcting the pattern size of a photomask according to the pattern density to be formed after recognizing the shift amount (deviation amount) of the pattern line width caused by the optical proximity effect. The PPC technique is a technique for recognizing the shift amount of the pattern line width caused by the above-described process proximity effect and correcting the dimension of the mask pattern in accordance with the pattern density to be formed.
JP-A-3-36549 JP-A-8-32450

  However, when the present inventor examined the PPC technique, it was found that the processing conversion difference (etching shift) due to etching is affected by effects other than the distance between patterns. For example, when etching a polysilicon film, the processing conversion difference varies depending on whether or not ions are implanted into the polysilicon film. This means that, for example, when a gate pattern is etched into a selectively ion-implanted polysilicon film, the dimensional conversion difference varies depending on whether or not ion implantation is performed. Therefore, the mask pattern cannot be completely corrected by the PPC technique described above.

  The present invention has been made in view of the above problems, and can pattern a patterning layer with high precision even when a plurality of different composition regions having different compositions exist in the patterning layer where a desired pattern is to be formed. Provided are a photomask data creation method, a photomask, and a pattern formation method.

  Thus, according to the present invention, a photo for forming a photomask for use in exposing a photoresist film formed on a patterned layer having a plurality of different composition regions having different compositions etched into a desired pattern. A mask data creation method, wherein basic pattern data of a pattern to be formed in each different composition region in the layer to be patterned is etched in each different composition region according to an inter-pattern distance of a resist pattern formed on each different composition region Correction is performed using the first shift amount generated in different states and the second shift amount generated in different etching states of the photoresist film depending on the pattern-to-pattern distance of the photomask. Provided is a photomask data creation method comprising a process of creating mask data That.

Moreover, according to another viewpoint of this invention, the photomask formed based on the photomask data produced by the said photomask data production method is provided.
According to still another aspect of the present invention, a step of forming a photoresist film on a layer to be patterned having a plurality of different composition regions having different compositions, and photomask data created by the photomask data creation method A pattern having a step of exposing and developing the photoresist film using a photomask formed on the basis of the mask and forming a resist pattern, and a step of etching the patterned layer using the resist pattern as a mask A forming method is provided.

  According to the present invention, even when a plurality of different composition regions having different compositions are present in a patterning layer on which a desired pattern is to be formed, the patterning layer can be patterned with high accuracy and a desired finished dimension can be obtained. This makes it possible to improve device characteristics and yield.

The photomask data creation method of the present invention forms a photomask for use in exposing a photoresist film formed on a patterned layer having a plurality of different composition regions having different compositions that are etched into a desired pattern. The photomask data creation method according to claim 1, wherein basic pattern data of a pattern to be formed in each different composition region in the layer to be patterned is changed to each different composition region according to an inter-pattern distance of a resist pattern formed on each different composition region. The photomask to be formed is corrected by using the first shift amount that is caused by different etching states of the photomask and the second shift amount that is caused by different etching states of the photoresist film depending on the inter-pattern distance of the photomask. The step of creating the photomask data is provided.
FIG. 5 is a flowchart showing the steps until a gate pattern is formed using the photomask data creation method of the present invention.

In the present invention, the layer to be patterned has a plurality of different composition regions having different compositions as described above. Here, the layer to be patterned includes not only a layer formed on a support (substrate, wafer, etc.), but also the support itself. Examples of the layer to be patterned include a semiconductor substrate, a semiconductor layer formed on a substrate made of a semiconductor or other materials, and the like. Accordingly, the plurality of different composition regions of the layer to be patterned means that, for example, one region existing in a plane on the semiconductor substrate or the semiconductor layer and the other region are configured with different compositions. The composition region can be formed by partial impurity implantation, impurity removal, or the like in the semiconductor substrate or semiconductor layer.
Specifically, the layer to be patterned can be exemplified by a configuration having a first different composition region made of polysilicon and a second different composition region made of phosphorus-containing polysilicon. It is not limited to.

In the present invention, the step of creating the photomask data includes: (a) creating a basic pattern data of a pattern to be formed in each different composition region in the patterning layer; and (b) a pattern in the basic pattern data. When the layer to be patterned is etched using a resist pattern having the same pattern as the mask as a mask, the etching state varies depending on the distance between the patterns of the resist patterns in the different composition regions. Generating first correction data based on the first correction data, correcting the basic pattern data using the first correction data, and generating resist pattern data of a resist pattern to be formed; and (c) in the resist pattern data A frame with the same pattern as the pattern When the photoresist film exposed using a mask is developed to form a pattern, the optical proximity effect varies depending on the inter-pattern distance of the photomask, and the etching state varies based on the second shift amount. And generating the second correction data and correcting the resist pattern data using the second correction data to generate photomask data of a photomask to be formed.
Hereinafter, steps (a) to (c) will be described in detail.

<Process (a)>
The basic pattern data in the step (a) is data specifying the shape and arrangement of a pattern which is a non-etched portion, and the line width data of each pattern and the inter-pattern distance data (etching width) between adjacent patterns. Data).

<Step (b)>
As described with reference to FIG. 2, when a layer to be patterned is etched using a resist pattern as a mask, a process proximity effect (etching density effect) acts and the etching rate varies depending on the distance between the resist patterns. It cannot be formed on the layer to be patterned.
Furthermore, as shown in FIG. 3, the processing conversion difference (etching shift) caused by etching the patterning layer using the resist pattern as a mask is influenced not only by the distance between the patterns but also by the difference in the composition of the patterning layer. ing. FIG. 3 is a graph showing that when the polysilicon film is etched using the resist pattern as a mask, the etching shift amount varies depending on whether or not phosphorus ions are implanted into the polysilicon.
Furthermore, as shown in FIG. 4, the etching shift of the layer to be patterned is affected by the difference in the concentration of the implanted impurity ions. FIG. 4 is a graph showing that the etching shift amount varies depending on the phosphorus ion concentration when the polysilicon film is etched using the resist pattern as a mask.
Therefore, in the step (b), the first shift amount is used for each of the inter-pattern distances that are generated by different etching rates depending on the inter-pattern distances of the resist pattern in each of the plurality of different composition regions in the patterning layer. 1 Create correction data.

  In the present invention, in order to obtain the first shift amount, a test resist pattern having a plurality of different inter-pattern distances is formed on a test patterning layer having a plurality of different composition regions having the same composition as the patterning layer, Etching using the test resist pattern as a mask to form a test pattern in each different composition region, a plurality of pattern line widths or a plurality of pattern distances included in the test pattern, and a plurality of patterns included in the test resist pattern The method may further include a step of creating a first relational expression based on a relationship with a line width or the distance between the plurality of patterns. Thus, in the step (b), the first shift amount can be calculated using the inter-pattern distance of the resist pattern based on the basic pattern data and the first relational expression. The step of creating the first relational expression (first correction function) is performed for each composition of each different composition region of the layer to be patterned. That is, the necessary number of first relational expressions are created in advance. Therefore, when the test patterning layer has a single composition, the above-described process is performed using a plurality of test patterning layers corresponding to the compositions of the different composition regions.

An example of the process of creating this first relational expression will be described in detail below.
For example, when the layer to be patterned is a polysilicon film having a region where phosphorus ions are not implanted and a region where phosphorous ions are implanted, it is formed on the semiconductor substrate 1 via the oxide film 2, for example, as shown in FIG. A polysilicon film 3 (without phosphorus ion implantation) is prepared as a first test patterning layer, and different inter-pattern distances A ₁ , B ₁ and C ₁ are formed on the polysilicon film 3 of the test patterning layer. A test resist pattern 4 is formed. For example, the inter-pattern distance of the test pattern is set to 10000 nm from the minimum value (about 180 nm) of the design rule. For example, when the inter-pattern distance is about the minimum value (180 nm) of the design rule (about 300 nm) to 300 nm, the inter-pattern distance is set to a different inter-pattern distance by increasing / decreasing by an arbitrary value from 2 nm to 5 nm. Similarly, when the inter-pattern distance is 300 to 500 nm, it is increased or decreased by an arbitrary value in the range of 10 to 20 nm, and when the inter-pattern distance is 500 to 1000 nm, it is increased or decreased by an arbitrary value in the range of 50 to 100 nm. When the distance between patterns is 1000 to 10000 nm, the distance between patterns is set differently by increasing or decreasing by an arbitrary value in the range of 1000 to 2000 nm.
At this time, the resist pattern 4 is made of the same material as the resist pattern used for etching the layer to be patterned performed in an actual process.

The thickness of the polysilicon film 3 is preferably about the same as the thickness set in the patterning layer from the viewpoint of experimental accuracy. Further, the line width of the resist pattern 4 is arbitrary, and in FIG. 6A, the pattern line widths at the pattern distances A ₁ , B ₁ and C ₁ are WA ₁ , WB ₁ and WC ₁ . The pattern line widths WA ₁ , WB _1, and WC ₁ can be set to arbitrary values in a range from about the minimum (130 nm) of the design rule to about 1000 nm, for example.
Note that it is preferable to increase the experimental accuracy by increasing the distance between patterns as small as possible and increasing the experimental accuracy. The distances between patterns A ₁ , B ₁ and C ₁ and the pattern line widths are set as WA ₁ , WB ₁ and WC. ₁ can be shaken in a matrix to produce a test resist pattern 4. The setting of the inter-pattern distance and the pattern line width is the same for the positive resist and the negative resist.

Next, as shown in FIG. 6B, the polysilicon film 3 is etched using the resist pattern 4 as a mask, and the resist pattern 4 is removed. Etching conditions such as an etching solution used at this time are the same as the etching conditions employed for etching the layer to be patterned.
Thereafter, the pattern line widths Wa ₁ , Wb _1, and Wc ₁ and / or the pattern distances a ₁ , b _1, and c ₁ of the patterned test polysilicon pattern 30 are measured.
As a result, the etching shift amount at the inter-pattern distance A ₁ is calculated as WA ₁ -Wa ₁ (or Wa ₁ -WA ₁ ) or A ₁ -a ₁ (or a ₁ -A ₁ ). Similarly, the etching shift amount is calculated for the inter-pattern distances B ₁ and C ₁ . Then, the first relational expression regarding the polysilicon film 3 is created based on the etching shift amount corresponding to the distance between the patterns.

Further, similarly to the creation of the first relational expression relating to the polysilicon film 3 described above, a polysilicon film into which phosphorus ions have been implanted is prepared as a patterning layer for testing, and the first relational expression is also applied to this phosphorus ion-containing polysilicon film. Create In this case, if the layer to be patterned has a plurality of different composition regions having different phosphorus ion concentrations, a plurality of test patterning layers having different phosphorus ion concentrations at the same concentration are prepared. Create 1 relational expression.
As described above, in the step (b), a plurality of first relational expressions corresponding to the compositions of the different composition regions thus obtained and the inter-pattern distance of the resist pattern based on the basic pattern data. Are used to calculate the first shift amount.

<Step (c)>
As described with reference to FIG. 1, when a resist film is exposed and developed using a photomask, the optical proximity effect acting on the resist film differs depending on the distance between the photomask patterns. Can not. Therefore, in the step (c), the second correction data is created by using the second shift amount for each inter-pattern distance that is caused by different optical proximity effects depending on the inter-pattern distance of the photomask.
In the present invention, in order to obtain the second shift amount, a test photoresist is exposed and developed using a test photomask having a plurality of different inter-pattern distances, and a test resist pattern is formed. The method further includes the step of creating a second relational expression based on a relationship between a pattern line width or a plurality of inter-pattern distances and a plurality of pattern line widths or the plurality of inter-pattern distances of the test photomask. Also good. Thus, in the step (c), the second shift amount can be calculated using the inter-pattern distance of the photomask pattern based on the resist pattern data and the second relational expression.
In the present invention, the light source wavelength and transfer method of the photolithography process for forming a resist pattern on the layer to be patterned are not limited.
An example of the process of creating the second relational expression (second correction function) will be described in detail below.

(For positive resists)
As shown in FIG. 7A, for example, a positive photoresist film 6 that is the material of the resist pattern described in FIG. 6 is applied on a substrate 5 such as a semiconductor substrate or a glass substrate, and different pattern distances A _2. The photoresist film 6 is exposed using a test positive photomask 7 having B ₂ and C ₂ . At this time, the film thickness of the photoresist film 6 is preferably about the same as the film thickness of the photoresist film applied on the patterning layer from the viewpoint of experimental accuracy. The line width of the photomask 7 is arbitrary. In FIG. 7A, the pattern line widths at the inter-pattern distances A ₂ , B ₂ and C ₂ are WA ₂ , WB ₂ and WC ₂ . In order to improve the experimental accuracy, it is preferable that the distance between patterns is as large as possible and is varied by small distances.

Next, as shown in FIG. 7B, the exposed photoresist film 6 is developed. Etching conditions such as an etching gas used at this time are the same as those employed for forming a resist pattern formed on the patterning layer.
Thereafter, the pattern line widths Wa ₂ , Wb _2, and Wc _{2 of} the patterned test resist pattern 60 and / or the inter-pattern distances a ₂ , b _2, and c ₂ are measured.
As a result, the etching shift amount at the pattern distance A ₂ is calculated as WA ₂ -Wa ₂ (or Wa ₂ -WA ₂ ) or A ₂ -a ₂ (or a ₂ -A ₂ ), Similarly, the etching shift amount is calculated for the inter-pattern distances B ₂ and C ₂ . Then, the second relational expression relating to the photoresist film 6 is created based on the etching shift amount corresponding to the distance between the patterns.
Then, as described above, in the step (c), the second shift amount is calculated using the second relational expression thus obtained and the inter-pattern distance of the photomask based on the resist pattern data. To do.

(In the case of negative resist)
As shown in FIG. 8A, a negative photoresist film 8 that is the resist pattern material described in FIG. 6 is applied on a substrate 5 such as a semiconductor substrate or a glass substrate, and different pattern distances WA _2. The photoresist film 8 is exposed using a negative test photomask 9 having WB ₂ and WC ₂ . At this time, the film thickness of the photoresist film 8 is preferably about the same as the film thickness of the photoresist film applied on the patterning layer from the viewpoint of experimental accuracy. The line width of the photomask 9 is arbitrary. In FIG. 8A, the pattern line widths at the inter-pattern distances WA ₂ , WB ₂ and WC ₂ are A ₂ , B ₂ and C ₂ . Also in this case, it is preferable to increase the experimental accuracy by increasing the distance between the patterns as much as possible and making them different by small distances.

Next, as shown in FIG. 8B, the exposed photoresist film 8 is developed. Etching conditions such as an etching gas used at this time are the same as those employed for forming a resist pattern formed on the patterning layer.
Thereafter, the pattern line widths Wa ₂ , Wb ₂ and Wc _{2 of} the patterned test resist pattern 80 and / or the distances between patterns a ₂ , b ₂ and c ₂ are measured.
As a result, the etching shift amount when the inter-pattern distance WA ₂ is calculated as WA ₂ −Wa ₂ (or Wa ₂ −WA ₂ ) or A ₂ −a ₂ (or a ₂ −A ₂ ) Similarly, the etching shift amount is calculated for the inter-pattern distances WB ₂ and WC ₂ . Then, the second relational expression relating to the photoresist film 8 is created based on the etching shift amount corresponding to the distance between the patterns.
Then, as described above, in the step (c), the second shift amount is calculated using the second relational expression thus obtained and the inter-pattern distance of the photomask based on the resist pattern data. To do.

As described above, in the step (c), the second correction data is created based on the second shift amount that is generated due to the difference in the etching state due to the difference in the optical proximity effect depending on the inter-pattern distance of the photomask. Is used to correct the resist pattern data to create photomask data for the photomask to be formed.
Then, a photomask is formed based on the photomask data.

Next, a pattern forming method using a photomask formed based on photomask data by the above-described method will be described with reference to FIGS.
This pattern forming method was formed on the basis of a step of forming a photoresist film on a layer to be patterned having a plurality of different composition regions having different compositions and photomask data created by the above-described photomask data creation method. The method includes a step of exposing and developing the photoresist film using a photomask to form a resist pattern, and a step of etching the layer to be patterned using the resist pattern as a mask.
Hereinafter, a case will be described in which a patterning layer having a polysilicon region into which phosphorus is not implanted and a phosphorus-containing polysilicon region is patterned to form a gate electrode pattern of a MOS transistor.

First, as shown in FIG. 9A, a gate oxide film 12 having a thickness of about 1 to 30 nm and a thickness of 50 to 300 nm are formed on a Si substrate 11 on which an element isolation film and an impurity diffusion layer (not shown) are formed. A polysilicon film 13 is formed to a degree. Next, as shown in FIG. 9B, in order to suppress the gate depletion of the NMOS transistor with the miniaturization of the device, the resist pattern 14 that opens the NMOS transistor region 13a and covers the PMOS transistor region 13b is formed. Phosphorus (P) ions are formed on the polysilicon film 13 and implanted into the NMOS transistor region 13a at a concentration of about 2E15 to 5E15 (stms / cm ² ). In FIG. 9B, the arrow indicates ion implantation.

After removing the resist pattern 14, as shown in FIG. 9C, a positive photoresist film 15 having a film thickness of 100 to 1000 nm is formed on the NMOS and PMOS transistor regions 13a and 13b. Then, the photoresist film 15 is exposed using the positive type photomask 16 that has been subjected to the PPC correction and the OPC correction formed based on the above-described photomask data, and then the photoresist as shown in FIG. A resist pattern 17 is formed by developing the film 15.
Next, as shown in FIG. 10B, the polysilicon film 13 is dry-etched using the resist pattern 17 as a mask, and the resist pattern 17 is removed as shown in FIG. A gate electrode pattern 18 is simultaneously formed in the regions 13a and 13b. The line width of the gate electrode pattern 18 is accommodated with a small error of about ± 5 to 20 nm with respect to the line width of the pattern to be formed in the NMOS and PMOS transistor regions 13a and 13b of the polysilicon film 13.

  In the present embodiment, the polysilicon film having a plurality of different composition regions constituting the gate electrode pattern is exemplified, but the present invention is not limited to a specific layer. For example, the present invention can be applied to pattern formation of metal wiring layers and contact hole layers having different compositions, and gate layers and contact hole layers having different compositions.

It is a graph showing the distance dependence between patterns of a litho shift. It is a graph showing the distance dependence between patterns of an etching shift. It is a graph showing that the distance dependence between patterns of an etching shift changes with the presence or absence of phosphorus in a polysilicon film. It is a graph showing that the amount of etching shifts changes with the density | concentration of phosphorus in a polysilicon film. It is a flowchart which shows the process until it forms a gate pattern using the photomask data creation method of this invention. It is a figure explaining an example of the process which creates the 1st relational expression in the present invention. It is a figure explaining an example of the process of creating the 2nd relational expression in the present invention. It is a figure explaining another example of the process of creating the 2nd relational expression in the present invention. It is process drawing explaining one Embodiment of the pattern formation method of this invention. FIG. 9 is a process diagram illustrating a process continued from FIG. 8.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Oxide film 3 Polysilicon film 4 Test resist pattern 5 Substrate 6, 8 Photoresist film 7 Test positive photomask 9 Test negative photomask 11 Silicon substrate 12 Gate oxide film 13 Polysilicon film 13a NMOS Transistor region 13b PMOS transistor region 14 Resist pattern 15 Positive photoresist film 16 Photomask 17 Resist pattern 18 Gate electrode pattern 30 Test polysilicon pattern 60, 80 Test resist pattern A ₁ , B ₁ , C ₁ Test resist pattern pattern during distance WA _1, WB _1, WC ₁ pattern line width a ₁ a test resist pattern, b _1, c ₁ test pattern distance WA ₁ polysilicon pattern, WB _1, WC ₁ test polysilicon pattern Emissions of pattern line width A _2, B _2, the pattern of C ₂ pattern distance WA ₂ of the test photomask, WB _2, WC ₂ pattern line width a ₂ of the test photomask, b _2, c ₂ test resist pattern Distance between patterns WA ₂ , WB ₂ , WC ₂ Test resist pattern pattern line width

Claims (7)

A photomask data creation method for forming a photomask for use in exposing a photoresist film formed on a patterned layer having a plurality of different composition regions having different compositions to be etched into a desired pattern,
The basic pattern data of the pattern to be formed in each different composition region in the layer to be patterned is generated as a result of the etching state in each different composition region being different depending on the inter-pattern distance of the resist pattern formed on each different composition region. A step of creating photomask data of a photomask to be formed by performing correction using the shift amount and a second shift amount that is caused by different etching states of the photoresist film depending on a distance between patterns of the photomask. A photomask data creation method characterized by comprising: The step of creating the photomask data includes
(A) creating basic pattern data of a pattern to be formed in each different composition region in the patterning layer;
(B) When the patterning layer is etched using a resist pattern having the same pattern as the pattern in the basic pattern data as a mask, the etching rate varies depending on the distance between the patterns of the resist patterns in the different composition regions. Creating first correction data based on the first shift amount produced in different states, and creating resist pattern data of a resist pattern to be formed by correcting the basic pattern data using the first correction data. When,
(C) When a pattern is formed by developing the exposed photoresist film using a photomask having the same pattern as the pattern in the resist pattern data, the optical proximity effect varies depending on the inter-pattern distance of the photomask. Thus, photomask data of a photomask to be formed by generating second correction data based on the second shift amount generated in different etching states and correcting the resist pattern data using the second correction data. The method for creating photomask data according to claim 1, further comprising: A test resist pattern having a plurality of different inter-pattern distances is formed on a test patterning layer having a plurality of different composition regions having the same composition as the patterning layer, and etching is performed using the test resist pattern as a mask. A test pattern is formed in each different composition region, and a plurality of pattern line widths or a plurality of pattern distances included in the test pattern and a plurality of pattern line widths or a plurality of pattern distances included in the test resist pattern Further comprising creating a first relational expression based on the relationship;
3. The photomask data creation method according to claim 2, wherein, in the step (b), the first shift amount is calculated using an inter-pattern distance of a resist pattern based on the basic pattern data and the first relational expression. Using a test photomask having a plurality of different inter-pattern distances, the test photoresist is exposed and developed to form a test resist pattern, and the test resist pattern has a plurality of pattern line widths or a plurality of inter-pattern distances. And a step of creating a second relational expression based on the relationship between the plurality of pattern line widths or the plurality of inter-pattern distances of the test photomask,
4. The photomask according to claim 2, wherein, in the step (c), the second shift amount is calculated using an inter-pattern distance of a photomask pattern based on the resist pattern data and the second relational expression. 5. Data creation method.   The photomask according to any one of claims 1 to 4, wherein the layer to be patterned has a first different composition region made of polysilicon and a second different composition region made of phosphorus-containing polysilicon. Data creation method.   A photomask formed on the basis of photomask data created by the photomask data creation method according to claim 1.   A process for forming a photoresist film on a layer to be patterned having a plurality of different composition regions having different compositions, and photomask data created by the photomask data creation method according to any one of claims 1 to 5 A pattern having a step of exposing and developing the photoresist film using a photomask formed on the basis of the mask and forming a resist pattern, and a step of etching the patterned layer using the resist pattern as a mask Forming method.

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