JP2008198647A5 - - Google Patents
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- Publication number
- JP2008198647A5 JP2008198647A5 JP2007029316A JP2007029316A JP2008198647A5 JP 2008198647 A5 JP2008198647 A5 JP 2008198647A5 JP 2007029316 A JP2007029316 A JP 2007029316A JP 2007029316 A JP2007029316 A JP 2007029316A JP 2008198647 A5 JP2008198647 A5 JP 2008198647A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- group
- island
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 claims 57
- 239000004065 semiconductor Substances 0.000 claims 42
- 239000012535 impurity Substances 0.000 claims 13
- 229910052795 boron group element Inorganic materials 0.000 claims 12
- 229910052696 pnictogen Inorganic materials 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007029316A JP5142546B2 (ja) | 2007-02-08 | 2007-02-08 | 半導体装置及びその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007029316A JP5142546B2 (ja) | 2007-02-08 | 2007-02-08 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008198647A JP2008198647A (ja) | 2008-08-28 |
| JP2008198647A5 true JP2008198647A5 (enrdf_load_stackoverflow) | 2010-02-25 |
| JP5142546B2 JP5142546B2 (ja) | 2013-02-13 |
Family
ID=39757353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007029316A Active JP5142546B2 (ja) | 2007-02-08 | 2007-02-08 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5142546B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8901615B2 (en) | 2012-06-13 | 2014-12-02 | Synopsys, Inc. | N-channel and P-channel end-to-end finfet cell architecture |
| US8723268B2 (en) * | 2012-06-13 | 2014-05-13 | Synopsys, Inc. | N-channel and P-channel end-to-end finFET cell architecture with relaxed gate pitch |
| CN117690344B (zh) * | 2023-10-31 | 2024-10-15 | 惠科股份有限公司 | 可拉伸显示模组及显示装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2761496B2 (ja) * | 1992-02-25 | 1998-06-04 | 株式会社 半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置およびその作製方法 |
| JPH08316487A (ja) * | 1995-05-17 | 1996-11-29 | Sanyo Electric Co Ltd | 薄膜半導体装置の製造方法 |
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2007
- 2007-02-08 JP JP2007029316A patent/JP5142546B2/ja active Active