JP2008192752A - Organic device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem wherein the adhesion between an organic layer of an organic transistor and the source-drain electrode is poor, resulting in higher contact resistance. <P>SOLUTION: The problem is solved by providing an organic transistor which comprises a substrate, a gate electrode formed on the substrate, an insulating layer formed on the gate electrode, an organic molecule layer with the insulating layer surface covalent-bonded to one end, a catalyst layer covalent-bonded to the other end of the molecule layer, and the source-drain electrode formed on the catalyst layer. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a field effect transistor using an organic compound. More specifically, the present invention relates to an organic transistor using a self-assembled film.

Organic devices are actively studied for application to solar cells, EL elements, and thin film transistors because they can be reduced in cost, flexible, and increased in area. However, there is still a problem that the lifetime is short.
One reason why the lifetime of the organic device cannot be extended is considered to be the adhesion between the substrate or electrode and the organic layer. More specifically, the substrate or electrode portion is generally composed of an inorganic compound such as a metal or metal oxide.

  However, since layers that perform functions such as semiconductivity, luminescence, and photoelectric conversion in organic devices are organic compounds, the affinity between these organic compounds and the inorganic compounds that form the substrate and electrodes is low, and the organic-inorganic interface Due to the low adhesion at, peeling due to stress or the like is likely to occur. Further, the contact resistance is high at the organic-electrode interface with low adhesion, and it is conceivable that thermal degradation is further promoted by resistance heat when a current is passed.

That is, in order to obtain an organic device having a long lifetime and high mobility, it is considered important to improve the adhesion with the substrate and the electrode.
Therefore, in recent years, an organic transistor using a self-assembled film whose adhesion is improved by covalently bonding a substrate or an electrode and an organic compound has been devised.

  That is, in Japanese Patent Application Laid-Open No. 2003-92411 (Patent Document 1), an alkyl chain part of an insulating layer and a pyrene part of a semiconductor layer which are covalently connected to a gate electrode of low resistance silicon implanted with a high concentration are described. A so-called top contact type organic transistor is disclosed, in which gold is formed by vacuum deposition as a source electrode and a drain electrode on the self-assembled film having the self-assembled film.

JP 2003-92411 A

  In the above-mentioned Patent Document 1, since it is connected to the gate electrode by a covalent bond, the adhesion to the lower electrode is high, but the upper electrode (source and drain electrode) portion directly injecting charges into the organic substance is in physical contact with the organic compound. Therefore, the adhesiveness is low, and there is a problem that causes the deterioration as described above.

  According to the present invention, a substrate, a gate electrode formed on the substrate, an insulating layer formed on the gate electrode, an organic molecular layer in which one end is covalently bonded to the surface of the insulating layer, and the molecule There is provided an organic transistor comprising a catalyst layer in which the other end of the layer is covalently bonded, and a source and drain electrode formed on the catalyst layer.

  Furthermore, according to the present invention, the molecular layer is formed by covalently bonding a first step of forming a gate electrode and a gate insulating layer on a substrate and one end of an organic molecular layer on the surface of the gate insulating layer. An organic transistor comprising a second step of arranging, a third step of covalently bonding the other end of the molecular layer and a catalyst layer, and a fourth step of forming source and drain electrode layers on the catalyst layer A manufacturing method is provided.

According to the structure and the manufacturing method of the organic transistor of the present invention, the gate electrode-insulating layer-organic molecule-source / drain electrode are connected by a covalent bond. It is possible to obtain a long-life device without peeling off at the same time.
In addition, an organic molecular layer bonded to the catalyst layer (hereinafter also simply referred to as a molecular layer) is composed of a molecular layer having a functional group containing an atom having an unshared electron pair at the terminal portion, so that the molecular layer is formed of a catalyst metal. Since a coordination bond is formed, there is no peeling and it is possible to obtain a long-life device with low contact resistance.

  In addition, the organic molecular layer can be formed by laminating a plurality of organic molecular layers, so that the film thickness can be controlled during the device fabrication process, and the catalyst layer is covalently bonded to the end of the laminated molecular layer. It is possible to introduce various functional groups such as a functional group and a stable terminal functional group (terminal molecular layer).

  In addition, selective conversion of the functional group at the end of the molecular layer, that is, conversion from a functional group covalently bonded to the catalyst layer to a terminal functional group that is not covalently bonded, or covalent bonding from a precursor functional group that is not covalently bonded to the catalyst layer. By converting to a functional group, the catalyst layer can be selectively introduced into the region of the functional group to be covalently bonded, so that the source and drain electrodes can be patterned.

Furthermore, since the functional group to be covalently bonded is an amino group or a pyridyl group and the catalyst layer is composed of palladium, the coordination ability is more excellent. Therefore, the catalyst layer and the subsequent source and drain electrodes are formed. It is possible to pattern with high definition.
Further, by forming the source and drain electrodes by electroless plating, the electrodes can be formed without using a vacuum process.

  The structure, material, and manufacturing method of the organic transistor of the present invention will be specifically described with reference to FIGS.

First, the structure will be described.
FIG. 1 schematically shows the structure of the organic transistor of the present invention. The organic transistor of the present invention includes a substrate 11, a gate electrode 12, an insulating layer 13, an organic molecular layer 14, a catalyst layer 15, and source and drain electrodes 16 and 17.

The insulating layer 13 may be formed on the gate electrode 12, and the gate electrode may also serve as the substrate. The molecular layer may be a monomolecular layer or a laminated film in which a plurality of molecular layers are laminated.
When the molecular layer is composed of a plurality of layers, the film thickness of the organic film, the packing density can be controlled, and the functional groups on the surface can be converted, so that an advantageous device design is possible.
According to the organic transistor having such a structure, since the gate electrode-insulating layer-organic molecule-source / drain electrode are connected by a covalent bond, there is no peeling at each layer interface, and a long-life device can be obtained. It is.

Next, materials will be described.
As a material (part excluding the gate electrode and the insulating layer) that can be used for the substrate 11, a material having high transparency is preferable in consideration of a TFT element for display, and specifically, glass, quartz, acrylic resin, and the like can be given. It is done.
Furthermore, when a flexible display is considered, polymer materials such as acrylic resin, polyethylene sulfone resin, and polyimide resin are also preferable.

  A material that can be used for the gate electrode layer 12 is preferably a low-resistance conductor, specifically, an inorganic oxide conductor such as ITO (indium tin oxide) or IZO (indium zinc oxide), or a low resistance in which impurities are implanted. Examples include metals such as silicon, aluminum, gold, and platinum. In consideration of a flexible display, it is also preferable to use a conductive polymer such as doped polyaniline.

Next, it is preferable that a hydroxyl group is exposed on the outermost surface after the insulating layer 13 is formed.
Specific examples include inorganic oxide insulating films such as SiO ₂ and Al ₂ O ₃ and organic films such as polyvinyl alcohol and polyvinyl phenol.

Next, the main chain skeleton of the organic molecular layer, the position of the functional group, and the type of functional group covalently bonded to each layer will be described.
First, the position of the main chain skeleton and the functional group will be described with reference to FIG.
The skeleton of the organic molecule forming the molecular layer is preferably a π-conjugated compound. Specific examples of the π-conjugated compounds include those having a monocyclic structure such as benzene, pyridine, thiophene, and pyrrole (see, for example, FIG. 2a) and those having a condensed ring structure such as naphthalene, anthracene, tetracene, and pentacene. (For example, see FIG. 2b)) and those having a polycyclic structure such as biphenyl, bipyridyl, terphenyl, terthiophene (for example, see FIG. 2c)).

The position at which the functional group is bonded to the skeleton is preferably a para-position such as 1,4- or 2,5-position in the six-membered ring skeleton, and preferably the 2,5-position in the five-membered ring skeleton.
According to such a configuration, it becomes possible to continuously stack in a direction substantially perpendicular to the substrate, and an organic film with high orientation can be produced. Therefore, an organic layer with high carrier mobility can be formed. Is possible.

Next, the functional group bonded to each layer will be described with reference to FIG.
The functional group bonded to the insulating layer is preferably a trialkoxysilyl group such as a trimethoxysilyl group or a triethoxysilyl group, or a trihalogensilyl group such as a trichlorosilyl group (see, for example, FIG. 3a). According to such a functional group, a hydroxyl group on the surface of the insulating layer and a siloxane bond are formed, and a strong covalent bond is formed with the substrate, so that adhesion is improved and deterioration due to peeling can be prevented.

  In the case of being composed of a plurality of molecular layers, the functional group connecting the molecular layers is arbitrary as long as it causes a chemical reaction and causes a covalent bond.

  First, the reaction proceeds under mild conditions such as normal temperature, normal pressure, and atmospheric conditions. This is because there is little damage to the substrate and the electrode.

  Second, the molecular layer is connected by a π-conjugated bond. This is because π conjugation in the molecular chain direction can be extended, and the mobility of carriers is improved.

  As a first example, a combination of a compound having an amino group and a compound having a carboxyl group is preferable. N- (3-dimethylaminopropyl) -N′-ethylcarbodiimide (hereinafter abbreviated as EDC) or dicyclohexylcarbodiimide (hereinafter referred to as EDC) , Abbreviated as DCC), it is possible to form an amide bond between these compounds.

  In addition, as a second example, a combination of a compound having an ethynyl group and a compound having a halogen group is preferable. By reacting with a palladium catalyst and a copper catalyst, the compounds can be linked with each other by an acetylene bond. (See, for example, FIG. 3b)).

  As the functional group covalently bonded to the catalyst metal in the catalyst layer of the molecular layer, those having an unshared electron pair capable of forming a complex with the catalyst metal by coordination bond are preferable. Specific examples include nitrogen-containing functional groups such as amino group, pyridyl group, bipyridyl group, and ethylenediamino group, and phosphorus-containing functional groups such as dimethylphosphine and diphenylphosphine (see, for example, FIG. 3c).

  A functional group having an unshared electron pair forms a complex by coordinating with a catalytic metal to form a device that hardly peels between the organic layer and the metal layer, has little deterioration, and has low contact resistance. It is possible to obtain.

Next, the catalyst layer will be described.
The catalyst metal that forms the catalyst layer is preferably one that can form a complex with a functional group having an unshared electron pair and has a catalytic ability to metallize metal ions by electroless plating. Specific examples include palladium and palladium / tin.

  Furthermore, palladium is particularly preferable because it is excellent in coordination bond formation with an amino group, a pyridyl group, and an ethylenediamino group, so that the catalyst layer and the subsequent electrode layer can be patterned with high definition.

Next, the source and drain electrode layers will be described.
The source and drain electrode layers are preferably metallized (electroless plating) by a catalyst layer, and specific examples include nickel, cobalt, palladium, copper, silver, and gold. Among them, it is preferable to use gold or copper because it is a low resistance metal.

Next, the manufacturing method of the organic transistor of this invention is demonstrated concretely using FIG.
First, as shown in FIG. 4a), a gate electrode 12 is formed on a substrate 11 by a known method, for example, sputtering, ion plating, vacuum deposition, etc., and an insulating layer 13 is formed on the gate electrode 12. It is formed by a known method, for example, a thermal oxidation method, a CVD method, a sputtering method, a vacuum deposition method, a spin coating method, a sol-gel method, or the like.

Next, as shown in FIG. 4 b), a first organic molecular layer 141 is formed on the insulating layer 13.
In order to connect the catalyst layer or the second layer of the molecular layer to be subsequently covalently bonded, a monomolecular film having a uniform film quality and a functional group exposed on the surface is preferable. The silane coupling agent self-polymerizes in the presence of water, and when a polymer is formed in the system, it may form grains on the substrate if the polymer is physically and chemically adsorbed to the substrate. In the case of the method, it is preferable to use a dehydrated solvent such as anhydrous toluene. In the case of the gas phase method, it is preferable to form the vessel in an atmosphere in which moisture and humidity are controlled, for example, by replacing the container with nitrogen.

  Next, as shown in FIG. 4 c), the second and subsequent molecular layers 142 are formed on the first molecular layer 141. It is preferable to continuously laminate using a known chemical reaction.

  Explaining in detail with reference to FIG. 5, a method of alternately laminating two types of molecules having two identical functional groups (see AA + B-B type (for example, FIG. 5a)) and two types that react with one molecule. It is divided into the method (refer to the AB type (for example, FIG. 5b)) of continuously laminating molecules having the functional group.

In the A-A + B-B type, it is necessary to prepare two types of molecules. However, unlike the A-B type, there is no possibility of self-reaction, and therefore, monolayers can be stacked.
In the AB type, it is preferable to protect the functional group B in order to prevent a self-reaction (functional group B ′). After laminating the protected material, it is preferable to remove the protective group and laminate the next molecular layer. According to this method, since only one kind of molecule is used, the manufacturing cost can be reduced.
By laminating a plurality of molecular layers as described above, the film thickness of the organic film can be controlled in the process of device fabrication, and various functional groups can be introduced on the surface of the molecular layer.

  Next, as shown in FIG. 4 d), a covalent bond forming region 143 and a covalent bond non-forming region 144 are selectively formed on the plurality of molecular layers 142.

  This will be described in detail with reference to FIG. As a first technique, first, the molecular layer 61 having a functional group covalently bonded to the catalyst layer is laminated, and then the functional group covalently bonded to the catalyst layer is protected by a known technique such as photolithography. A molecular layer having a stable functional group that is not covalently bonded to the catalyst layer or a molecular layer having no functional group (terminal molecular layer) 62 is laminated there. Finally, by removing the protective film (resist film), a covalent bond formation region and a covalent bond non-formation region with the catalyst layer are separately formed (FIG. 6a)).

  The functional group covalently bonded to the catalyst layer in the above method preferably has an unshared electron pair and is covalently bonded to the terminal molecular layer, and specifically, an amino group is preferable. The terminal molecular layer is preferably a molecular layer that provides a stable surface and prevents adhesion of the catalyst, and is preferably a hydrocarbon compound such as unsubstituted benzene or alkane.

  As a second technique, first, a precursor molecular layer 63 of a covalent bond functional group with the catalyst layer is laminated. Next, by selectively applying external stimuli such as light and heat, the precursor functional group is converted into a functional group that is covalently bonded to the catalyst layer, thereby creating a region that is covalently bonded to the catalyst layer and a region that is not covalently bonded ( FIG. 6 b)).

  The external stimulus of the above method is preferably light. By causing a photochemical reaction, the functional group can be easily converted in a non-contact manner. Specifically, as shown in FIG. 7a), there is a method of converting a 2-nitrobenzyl ester group of carbamic acid into an amino group covalently bonded to the catalyst layer by light irradiation (for example, Ann Caviani Pease et al., “ Light-generated oligonuculeotide arrays for rapid DNA sequence analysis ", Proc. Natl. Acad. Sci., USA, 91 (1994), 5022-5026).

In addition to the method of converting a functional group by a one-step reaction as in the above method, the functional group may be converted by a plurality of steps of reaction.
Specifically, as shown in FIG. 6b), there is a method in which a chloromethyl group is converted to a formyl group by light irradiation and then converted to an amino group by reacting with ammonia (for example, SL Brandow et al., “Fabricatin of Patterned Amine Reactivity Templates Using 4-Chloromethylphenylsiloxane Self-Assembled Monolayer Films ”, Langmuir, Vol. 15, (1999), pages 5429-5432).

According to the above method, since the region that is not covalently bonded to the catalyst layer is not terminated with a precursor functional group having a functional group sensitive to a photochemical reaction but terminated with a formyl group, a stable surface can be obtained.
Next, a method for forming the catalyst layer 15 on the molecular layer 14 as shown in FIG.

  A substrate having a molecular layer capable of binding to the surface is immersed in an aqueous solution of a metal chloride salt forming a catalyst layer. As the solvent for dissolving the catalyst species, it is preferable to use a buffer solution in which the pH, ion species, and ion concentration are controlled, the formation rate of the catalyst layer is stabilized, and a uniform catalyst layer can be obtained. Furthermore, it is preferable to form the catalyst layer in a pH range of 2 to 10, which is a pH range with little damage to the molecular layer. According to this method, since the molecular layer becomes a ligand and can be coordinated to the catalyst metal of the catalyst layer, it is possible to produce a device having no contact resistance and low contact resistance.

Finally, source and drain electrodes 16 and 17 are formed on the catalyst layer 15 as shown in FIG.
First, as shown in Table 1 below, a plating solution is prepared from a combination of a metal complex to be formed with an electrode and a reducing agent.

Next, the substrate on which the catalyst layer is formed is immersed for several hours, and the ionic species and metal species adhering excessively are washed to form electrodes. At this time, the rate of electrode formation is highly dependent on the temperature and pH of the solution, so a heating device that can keep the temperature constant is used, and a buffer is added to the solution to stabilize the pH. It is preferable. Furthermore, it is preferable to form an electrode in a pH range of 2 to 10, which is a pH range with little damage to the molecular layer.
An organic transistor can be manufactured by the above method.

  The following examples are intended to illustrate the present invention and are not intended to limit the present invention in any way.

Example 1
8a) to 8j) schematically show a method for producing the organic transistor of the present invention.

Step 1:
First, as shown in FIG. 8 a), a substrate was prepared in which an insulating layer 83 of a thermal oxide film of 100 nm was formed on a gate electrode layer 81 of highly doped n-type silicon. Next, after immersing in acetone and degreasing by ultrasonic cleaning, the organic compound adhered by oxygen plasma treatment was removed, and a clean surface (hydroxyl surface) was exposed.

Step 2:
Next, as shown in FIG. 8b), a first molecular layer 841 was formed. Specifically, the substrate and p-aminophenylmethoxysilane were sealed in a Teflon (registered trademark) bottle, heated in an oven at 100 ° C. for 120 minutes, and ultrasonically cleaned with acetone.

Step 3:
Next, as shown in FIG. 8c), a second molecular layer 842 was laminated. Specifically, first, terephthalic acid was used as a molecule to be laminated, and a saturated aqueous solution thereof was prepared. Next, the substrate on which N- (3-dimethylaminopropyl) -N′-ethylcarbodiimide (EDC) hydrochloride and the first molecular layer 841 were formed was immersed in a terephthalic acid solution and stirred at room temperature for 3 hours. Finally, ultrasonic cleaning was performed with ultrapure water to remove the solute physically adsorbed on the substrate.

Step 4:
Next, as shown in FIG. 8D), a molecular layer third layer 843 was laminated. Specifically, first, an EDC aqueous solution was prepared, and the substrate on which the second molecular layer was formed was immersed therein. Next, 1,4-phenylenediamine hydrochloride was added as a molecule laminated on the aqueous solution, and the mixture was stirred for 3 hours at room temperature. Finally, ultrasonic cleaning was performed with ultrapure water to remove the solute physically adsorbed on the substrate.

Step 5:
Next, as shown in FIG. 8e), the above steps 3 and 4 were repeated 8 times to alternately stack dicarboxylic acid and diamine, for a total of 11 molecular layers.
Step 6:
Next, a precursor molecular layer 844 was laminated as shown in FIG. Specifically, first, 4- (chloromethyl) benzoic acid was used as a precursor molecule, and a dimethylformamide solution thereof was prepared. Next, EDC and the substrate on which the plurality of molecular layers 843 were formed were immersed and stirred at room temperature for 3 hours. Finally, it was rinsed well with dimethylformamide and ultrasonically cleaned with acetone to remove the solute physically adsorbed on the substrate.

Step 7:
Next, functional group conversion by light irradiation was performed as shown in FIG. Specifically, first, chromium is deposited on quartz as a transparent substrate, and channel lengths of 20 μm, 40 μm, 60 μm, 80 μm, and 100 μm are respectively formed by photolithography, and electrode patterns having channel widths of 400 μm are formed. Photomasks each having a chromium coating peeled off so that they could be formed were produced. Next, ultraviolet light of 193 nm was irradiated from above the photomask in an air atmosphere to selectively convert the methylchloro group into a formyl group (see FIG. 8h).

Step 8:
Next, as shown in FIG. 8i), the formyl group was converted to an amino group capable of forming a covalent bond with the catalyst by amidation and reduction. Specifically, ammonium acetate and sodium cyanoborohydride were dissolved in methanol, and the selectively formylated substrate was immersed therein and stirred at room temperature for 3 hours. Finally, ultrasonic cleaning with acetone was performed to remove the solute physically adsorbed on the substrate.

Step 9:
Next, as shown in FIG. 8 j), the catalyst layer 85 was supported on the molecular layer 84. Specifically, palladium is used as the catalyst layer, and its chloride salt, sodium tetrachloropalladate trihydrate (Na ₂ PdCl ₄ .3H ₂ O), is dissolved in a small amount of sodium chloride aqueous solution, A 2- (morpholino) ethanesulfonic acid buffer solution was added to prepare a catalyst solution.
Next, the substrate on which the molecular layer 84 was formed was immersed in the catalyst solution and allowed to stand at room temperature for 30 minutes. Finally, it was washed thoroughly with ultrapure water to remove the excessively attached catalyst.

Step 10:
Next, source and drain electrodes 86 and 87 were formed as shown in FIG. Specifically, first, gold is used as the source and drain electrodes, 0.47 g of sodium tetrachloroaurate (NaAuCl ₄ ), which is a chloride salt thereof, is dissolved in 100 ml of water, and further sodium thiosulfate (Na ₂ S _2). 1.6 g O ₃ ), 1.0 g sodium sulfite (Na ₂ SO ₃ ), 0.26 g ammonium chloride (NH ₄ Cl) and 4.4 g sodium L-ascobate (C ₆ H ₇ NaO ₆ ) Prepare the plating solution (please enter the amount of each reagent).

  This was heated to 60 ° C. with a water bath, and the substrate on which the catalyst layer 85 was formed was immersed for 4 minutes. After dipping the substrate, the thickness of the electrode was measured with an electron microscope and found to be 100 nm. Finally, it was thoroughly washed with ultrapure water to remove excessively attached gold and solute.

  Top contact transistors having a channel length of 20 μm, 40 μm, 60 μm, 80 μm, or 100 μm and a channel width of all 400 μm were manufactured by the above-described method.

  As the evaluation of the fabricated element, the contact resistance of the source and drain electrodes was measured by the TML method (Transmission Line Model) often used as a method for evaluating the ohmic contact between the silicon semiconductor and the metal electrode.

Specifically, as shown in FIG. 9, the resistance value R _total between the source and drain electrodes of each channel length was measured. From the equation (1), the electrode contact resistance R _c was calculated from the y-intercept of the straight line obtained by plotting the resistance value R _total against the channel length L.

Comparative Example In accordance with steps 1 to 4, p-aminophenylmethoxysilane, terephthalic acid and 1,4-phenylenediamine are laminated on a substrate with a gate electrode layer of highly doped n-type silicon and an insulating layer of a silicon thermal oxide film. Up to the third layer was formed.
Next, alternating lamination of terephthalic acid and 1,4-phenylenediamine was performed 7 times to form a total of 10 molecular layers. Furthermore, aniline was laminated as a terminal molecular layer to form a total of 11 molecular layers.
Finally, 100 nm of gold was formed by vacuum deposition as the source and drain electrodes, and a transistor in which the organic layer-upper electrode interface was in physical contact was fabricated.
When the contact resistance was measured by the TML method in the same manner as in the above example, the contact resistance value was 10 times larger than that of the device produced by the present invention.

  From this result, it can be said that the transistor of the present invention is a long-life element having low contact resistance and excellent adhesion.

According to the structure and the manufacturing method of the organic transistor of the present invention, the gate electrode-insulating layer-organic molecule-source / drain electrode are connected by a covalent bond. It is possible to obtain a long-life device without peeling off at the same time.
In addition, the organic molecular layer bonded to the catalyst layer is composed of a molecular layer having a functional group containing an atom having an unshared electron pair at the terminal portion, so that the molecular layer forms a coordinate bond with the catalyst metal, so that peeling occurs. It is possible to obtain a long-life device with low contact resistance.

  In addition, the organic molecular layer can be formed by laminating a plurality of organic molecular layers, so that the film thickness can be controlled during the device fabrication process, and the catalyst layer is covalently bonded to the end of the laminated molecular layer. It is possible to introduce various functional groups such as a functional group and a stable terminal functional group (terminal molecular layer).

  In addition, selective conversion of the functional group at the end of the molecular layer, that is, conversion from a functional group covalently bonded to the catalyst layer to a terminal functional group that is not covalently bonded, or covalent bonding from a precursor functional group that is not covalently bonded to the catalyst layer. By converting to a functional group, the catalyst layer can be selectively introduced into the region of the functional group to be covalently bonded, so that the source and drain electrodes can be patterned.

Furthermore, since the functional group to be covalently bonded is an amino group or a pyridyl group and the catalyst layer is composed of palladium, the coordination ability is more excellent. Therefore, the catalyst layer and the subsequent source and drain electrodes are formed. It is possible to pattern with high definition.
Further, by forming the source and drain electrodes by electroless plating, the electrodes can be formed without using a vacuum process.

It is the schematic of the organic transistor of this invention. It is a figure which shows an example of the molecular skeleton of the organic transistor of this invention. It is a figure which shows an example of the functional group of the organic transistor of this invention. It is the schematic which shows the manufacturing process of the organic transistor of this invention. It is the schematic which shows an example of the lamination | stacking method of the organic transistor of this invention.

It is the schematic which shows the patterning of the functional group of the organic transistor of this invention. It is a figure which shows an example of the functional group conversion of the organic transistor of this invention. It is the schematic which shows the manufacturing process of the organic transistor of this invention. It is the schematic which shows the measuring method of the contact resistance of the organic transistor of this invention.

Explanation of symbols

11: substrate
12: gate electrode,
13: Insulating layer,
14: multiple molecular layers;
141: first molecular layer,
142: second and subsequent molecular layers,
143: Covalent bond formation region with the catalyst layer,
144: Covalent bond non-formation region with the catalyst layer,
15: catalyst layer,
16, 17: Source and drain electrodes.
61: Molecular layer having a covalent bond functional group with the catalyst layer 62: Terminal molecule 63: Precursor molecular layer of the covalent bond functional group with the catalyst layer 81: Gate electrode,
83: Insulating layer,
841: first molecular layer,
842: second molecular layer,
843: the third molecular layer,
844: precursor molecular layer,
84: molecular layer,
85: catalyst layer,
86, 87: Source and drain electrodes 91: Substrate, gate electrode,
92: Insulating layer,
93: molecular layer (semiconductor layer),
94: catalyst layer,
95: Source and drain electrodes

Claims (9)

  A substrate, a gate electrode formed on the substrate, an insulating layer formed on the gate electrode, an organic molecular layer in which one end of the insulating layer is covalently bonded, and the other end of the molecular layer is shared An organic transistor comprising a combined catalyst layer and source and drain electrodes formed on the catalyst layer.   The other end of the molecular layer covalently bonded to the catalyst layer has a functional group containing an atom having an unshared electron pair, and the functional group is coordinated to the catalyst layer. Organic transistor.   The organic transistor according to claim 1, wherein the functional group to be coordinated is an amino group or a pyridyl group, and the catalyst layer contains palladium.   The organic transistor according to claim 1, wherein the molecular layer is formed of a plurality of molecular layers.   A first step of forming a gate electrode and a gate insulating layer on a substrate; a second step of arranging the molecular layer by covalently bonding one end of an organic molecular layer on the surface of the gate insulating layer; and A method for producing an organic transistor, comprising: a third step of covalently bonding the other end of the molecular layer and the catalyst layer; and a fourth step of forming source and drain electrode layers on the catalyst layer.   In the second step, after arranging an organic molecular layer to be covalently bonded on the gate insulating layer, a plurality of organic molecular layers are stacked, and the end of the stacked molecular layer is not covalently bonded to a region to be covalently bonded to the catalyst layer. The method for producing an organic transistor according to claim 5, further comprising a fifth step of selectively creating regions.   In the fifth step, a precursor molecular layer having a functional group that is not covalently bonded to the catalyst layer is stacked at the end of the stacked molecular layer, and this functional group is selectively converted into a functional group that is covalently bonded to the catalyst layer. The manufacturing method of the organic transistor of Claim 6 including a process.   The fifth step includes a step of laminating a molecular layer having a functional group covalently bonded to the catalyst layer at the end of the laminated molecular layer and selectively laminating a terminal molecular layer not covalently bonded to the catalyst layer. 6. A method for producing an organic transistor according to 6.   The method for producing an organic transistor according to claim 5, wherein the step of forming the source / drain electrode layer in the fourth step includes a step of forming an electrode by electroless plating.

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