JP2008187190A5

JP2008187190A5 -

Info

Publication number: JP2008187190A5
Application number: JP2008039913A
Authority: JP
Filing date: 2008-02-21
Publication date: 2011-02-17
Anticipated expiration: 2018-01-14

Claims

A temperature raising step of placing and heating the silicon wafer in an inert gas atmosphere;
A first DCS treatment step in which dichlorosilane (DCS) is introduced to cause a surface reaction of the silicon wafer;
A first deposition step of introducing tungsten hexafluoride in addition to dichlorosilane to deposit tungsten silicide on the surface of the silicon wafer;
A second DCS treatment step to stop tungsten hexafluoride and introduce dichlorosilane;
A second deposition step of depositing tungsten silicide by introducing tungsten hexafluoride in addition to dichlorosilane;
A third DCS treatment step to stop tungsten hexafluoride and introduce dichlorosilane;
The treatment step of stopping the dichlorosilane and introducing the inert gas is carried out sequentially,
Introducing dichlorosilane from the first deposition step to the third DCS treatment step, the introduction amount of dichlorosilane and tungsten hexafluoride in the first deposition step and the second deposition step is as follows. A method for forming a tungsten silicide film, which is different.

2. The method of forming a tungsten silicide film according to claim 1, wherein the surface of the silicon wafer is reduced by the temperature raising step and the first DCS treatment step.

The first DCS treatment step and the first deposition step are performed at 1.5 to 3.0 times the atmospheric pressure in the temperature raising step, the second DCS treatment step, and the second deposition step. 3. The method for forming a tungsten silicide film according to claim 1, wherein the method is performed at atmospheric pressure.

The mixing ratio of tungsten hexafluoride and dichlorosilane in the first deposition step is in the range of 1: 300 to 1: 500, and the mixing ratio of tungsten hexafluoride and dichlorosilane in the second deposition step is 1: 4. The method for forming a tungsten silicide film according to claim 1, wherein the method is in a range of 30 to 1:50.

4. The method for forming a tungsten silicide film according to claim 1, wherein the amount of dichlorosilane introduced in the second DCS treatment step and the second deposition step is substantially equal.

4. The tungsten silicide film formation according to claim 1, wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 1: 1 to 5: 1. Method.

The method for forming a tungsten silicide film according to claim 6, wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 3: 1 to 5: 1.

Prior to the first DCS treatment step, a surface treatment step of processing the surface of the silicon wafer into a surface state in which dichlorosilane is easily decomposed is performed. A method for forming the tungsten silicide film as described.

9. The method of forming a tungsten silicide film according to claim 8, wherein the surface state is termination of Si by F (fluorine).

9. The surface treatment step includes a step of treating the surface of the silicon wafer with a dilute hydrofluoric acid aqueous solution (DHF), and a step of drying while leaving an F component on the surface of the silicon wafer. Or a method for forming a tungsten silicide film according to 9;

10. The method for forming a tungsten silicide film according to claim 8, wherein the surface treatment step includes a step of treating the surface of the silicon wafer with one of gas phase HF, NF3, and ClF3.

12. The method of forming a tungsten silicide film according to claim 11, wherein the gaseous HF is anhydrous hydrofluoric acid (Anhydrous HF).

12. The method for forming a tungsten silicide film according to claim 11, wherein the gas phase HF is ionized HF generated by passing through an alcohol solvent.

The method for forming a tungsten silicide film according to claim 11, wherein the surface treatment step is performed in a processing chamber for forming the tungsten silicide film.

Prior to the temperature raising step, the silicon wafer is treated with a hydrogen peroxide solution, a treatment solution in which ozone is dissolved, a treatment solution in which hydrogen peroxide solution and ozone are dissolved, a hydrogen peroxide solution, ozone and HF. The processing process of processing with the processing liquid containing water, the processing liquid containing hydrogen peroxide water and HF, or the processing liquid containing ozone and HF is implemented. A method for forming a tungsten silicide film.

The processing step of processing the silicon wafer with O ₂ gas, O ₃ gas, or H ₂ O vapor is performed between the temperature raising step and the first DCS processing step. The method for forming a tungsten silicide film according to any one of?

The method of forming a tungsten silicide film according to claim 16 , wherein the O ₂ gas, O ₃ gas, or H ₂ O vapor contains 0.001 to 0.5% of HF.

The forming method according to any one of claims 1 to 17 a method of manufacturing a semiconductor device characterized by comprising the step of forming the tungsten silicide film.

The first chamber, the second chamber, and the first chamber and the second chamber are connected to each other and movable between the first chamber and the second chamber to be opened or closed. Partition means, support means for supporting the silicon wafer in the first chamber and / or the second chamber, and a processing chemical solution for the silicon wafer in the first chamber and the second chamber, respectively. A semiconductor wafer comprising: an introduction means for introducing a processing gas; and a control means for controlling a chemical solution or a processing gas introduced into the first chamber and / or the second chamber, and processing the silicon wafer. 2. The tungsten carbide film according to claim 1, wherein a tungsten silicide film is formed on the silicon wafer using a processing apparatus. The method of forming the silicide film.

A temperature raising step of introducing a silicon wafer having polysilicon deposited on the surface thereof into the processing chamber and raising the temperature of the silicon wafer in an inert gas atmosphere;
A first surface treatment step of introducing dichlorosilane to cause a surface reaction of the polysilicon;
A first deposition step of introducing tungsten hexafluoride in addition to dichlorosilane to deposit a tungsten silicide film on the surface of the polysilicon;
A second surface treatment step of stopping the tungsten hexafluoride and introducing dichlorosilane;
A second deposition step of depositing tungsten silicide film by introducing tungsten hexafluoride in addition to dichlorosilane;
A third surface treatment step for stopping tungsten hexafluoride and introducing dichlorosilane;
The treatment step of stopping the dichlorosilane and introducing the inert gas is carried out sequentially,
Continue to introduce dichlorosilane from the first deposition step to the third surface treatment step,
After the processing step, a first tungsten silicide layer is provided on the silicon wafer, a second tungsten silicide layer is provided on the first tungsten silicide layer,
A method of forming a tungsten silicide film, wherein the second tungsten silicide layer is thicker than the first tungsten silicide layer.

21. The method of manufacturing a semiconductor device according to claim 20 , wherein the surface of the polysilicon is reduced by the temperature raising step and the first surface treatment step.

The mixing ratio of tungsten hexafluoride and dichlorosilane in the first deposition step is in the range of 1: 300 to 1: 500, and the mixing ratio of tungsten hexafluoride and dichlorosilane in the second deposition step is 1: 21. The method of manufacturing a semiconductor device according to claim 20 , wherein the range is 30 to 1:50.

21. The method of manufacturing a semiconductor device according to claim 20 , wherein the amount of dichlorosilane introduced in the second surface treatment step and the second deposition step is substantially equal.

24. The method of manufacturing a semiconductor device according to claim 23 , wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 1: 1 to 5: 1.

25. The method of manufacturing a semiconductor device according to claim 24 , wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 3: 1 to 5: 1.

  A temperature raising step of placing and heating the silicon wafer in an inert gas atmosphere;
  A first DCS treatment step in which dichlorosilane (DCS) is introduced to cause a surface reaction of the silicon wafer;
  A first deposition step of introducing tungsten hexafluoride in addition to dichlorosilane to deposit tungsten silicide on the surface of the silicon wafer;
  A second DCS treatment step that stops tungsten hexafluoride and introduces dichlorosilane;
  Sequentially performing a second deposition step of introducing tungsten hexafluoride in addition to dichlorosilane to deposit tungsten silicide,
  Introducing dichlorosilane from the first deposition step to the second deposition step, the introduction amounts of dichlorosilane and tungsten hexafluoride in the first deposition step and the second deposition step are different. A method for forming a tungsten silicide film.

27. The method of forming a tungsten silicide film according to claim 26, wherein the surface of the silicon wafer is reduced by the temperature raising step and the first DCS treatment step.

The first DCS treatment step and the first deposition step are performed at 1.5 to 3.0 times the atmospheric pressure in the temperature raising step, the second DCS treatment step, and the second deposition step. 28. The method of forming a tungsten silicide film according to claim 26 or 27, wherein the method is performed at atmospheric pressure.

The mixing ratio of tungsten hexafluoride and dichlorosilane in the first deposition step is in the range of 1: 300 to 1: 500, and the mixing ratio of tungsten hexafluoride and dichlorosilane in the second deposition step is 1: 29. The method for forming a tungsten silicide film according to claim 26 or 28, wherein the range is from 30 to 1:50.

29. The method for forming a tungsten silicide film according to claim 26, wherein the amount of dichlorosilane introduced in the second DCS treatment step and the second deposition step is substantially equal.

29. The tungsten silicide film formation according to claim 26 or 28, wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 1: 1 to 5: 1. Method.

32. The method for forming a tungsten silicide film according to claim 31, wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 3: 1 to 5: 1.

The surface treatment step of processing the surface of the silicon wafer into a surface state in which dichlorosilane is easily decomposed is performed prior to the first DCS treatment step, according to any one of claims 26 to 32. A method for forming the tungsten silicide film as described.

34. The method of forming a tungsten silicide film according to claim 33, wherein the surface state is termination of Si by F (fluorine).

The surface treatment step includes a step of treating the surface of the silicon wafer with a dilute hydrofluoric acid solution (DHF), and a step of drying while leaving an F component on the surface of the silicon wafer. 35. The method for forming a tungsten silicide film according to 34.

In the surface treatment step, the surface of the silicon wafer is transformed into gas phase HF, NF _3Three Or ClF _3Three 35. The method of forming a tungsten silicide film according to claim 33 or 34, further comprising a step of processing by any of the above.

37. The method of forming a tungsten silicide film according to claim 36, wherein the gas phase HF is anhydrous hydrofluoric acid (Anhydrous HF).

37. The method for forming a tungsten silicide film according to claim 36, wherein the gas phase HF is ionized HF generated by passing through an alcohol solvent.

The method for forming a tungsten silicide film according to any one of claims 36 to 38, wherein the surface treatment step is performed in a processing chamber for forming the tungsten silicide film.

Prior to the temperature raising step, the silicon wafer is treated with a hydrogen peroxide solution, a treatment solution in which ozone is dissolved, a treatment solution in which hydrogen peroxide solution and ozone are dissolved, a hydrogen peroxide solution, ozone and HF. 33. The processing step of processing with a processing solution containing hydrogen, a processing solution containing hydrogen peroxide and HF, or a processing solution containing ozone and HF is carried out. A method for forming a tungsten silicide film.

The silicon wafer is inserted between the temperature raising step and the first DCS treatment step. ₂₂ Gas, O _3Three Gas or H ₂₂ The method for forming a tungsten silicide film according to any one of claims 26 to 32, wherein a processing step of processing with O vapor is performed.

O above ₂₂ Gas, O _3Three Gas or H ₂₂ 42. The method of forming a tungsten silicide film according to claim 41, wherein the O vapor contains 0.001 to 0.5% HF.

43. A method of manufacturing a semiconductor device, comprising a step of forming a tungsten silicide film by the formation method according to any one of claims 26 to 42.

The first chamber, the second chamber, and the first chamber and the second chamber are connected to each other and movable between the first chamber and the second chamber to be opened or closed. Partition means, support means for supporting the silicon wafer in the first chamber and / or the second chamber, and a processing chemical solution for the silicon wafer in the first chamber and the second chamber, respectively. A semiconductor wafer comprising: an introduction means for introducing a processing gas; and a control means for controlling a chemical solution or a processing gas introduced into the first chamber and / or the second chamber, and processing the silicon wafer. 27. The tongue according to claim 26, wherein a tungsten silicide film is formed on the silicon wafer using a processing apparatus. The method of forming the down silicide film.

  A temperature raising step of introducing a silicon wafer having polysilicon deposited on the surface thereof into the processing chamber and raising the temperature of the silicon wafer in an inert gas atmosphere;
  A first surface treatment step of introducing dichlorosilane to cause a surface reaction of the polysilicon;
  A first deposition step of introducing tungsten hexafluoride in addition to dichlorosilane to deposit a first tungsten silicide film on the surface of the polysilicon;
  A second surface treatment step of stopping the tungsten hexafluoride and introducing dichlorosilane;
  Sequentially performing a second deposition step of introducing tungsten hexafluoride in addition to dichlorosilane to deposit a second tungsten silicide film;
  Introducing dichlorosilane from the first deposition step to the second deposition step, the film thickness of the second tungsten silicide film is larger than the film thickness of the first tungsten silicide film. A method for manufacturing a semiconductor device.

46. The method of manufacturing a semiconductor device according to claim 45, wherein the surface of the polysilicon is reduced by the temperature raising step and the first surface treatment step.

The mixing ratio of tungsten hexafluoride and dichlorosilane in the first deposition step is in the range of 1: 300 to 1: 500, and the mixing ratio of tungsten hexafluoride and dichlorosilane in the second deposition step is 1: 46. The method of manufacturing a semiconductor device according to claim 45, wherein the range is from 30 to 1:50.

46. The method of manufacturing a semiconductor device according to claim 45, wherein the amount of dichlorosilane introduced in the second surface treatment step and the second deposition step is substantially equal.

46. The method of manufacturing a semiconductor device according to claim 45, wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 1: 1 to 5: 1.

50. The method of manufacturing a semiconductor device according to claim 49, wherein a flow rate ratio of dichlorosilane in the first deposition step and the second deposition step is in a range of 3: 1 to 5: 1.