JP2008182223A - Bonding method for solid state imaging device and solid state imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding method for solid state imaging device by which performance of an optical function-provided film is maintained and a solid state imaging element wafer is well bonded to a translucent substrate with high airtightness, and to provide the solid state imaging device. <P>SOLUTION: By bonding the solid state imaging element wafer 14 after processing the optical function-provided film 12 formed on a glass wafer 11, the glass wafer 11 is well bonded to the solid state imaging element wafer 14 with high airtightness without deteriorating characteristics of the optical function-provided film 12. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device joining method and a solid-state imaging device for joining two kinds of plate-like members in the manufacture of a solid-state imaging device.

  In recent years, solid-state imaging devices made up of CCD (Charge Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) used in digital cameras and mobile phones have been required to be further reduced in size and mass-produced.

  In order to reduce the size and mass production of the solid-state imaging device from such a demand, a solid-state imaging device wafer in which a large number of solid-state imaging device light-receiving portions are formed and a translucent substrate (glass wafer) A solid-state imaging device manufactured through steps such as formation of a through wiring and dicing after bonding through a spacer formed corresponding to a position surrounding the substrate, and a manufacturing method thereof have been proposed (for example, (See Patent Document 1 or Patent Document 2.)

  In such a method for manufacturing a solid-state imaging device, particularly in the bonding step, a voltage is applied at a high temperature while two plate-shaped members of the solid-state imaging device wafer and the glass wafer are in contact with each other via a spacer. A method by anodic bonding for bonding by heating has been proposed (see, for example, Patent Document 3 or Patent Document 4).

  In the anodic bonding, for example, as shown in FIG. 7, a silicon wafer 61 as a first plate member such as a solid-state imaging device wafer, a glass wafer 62 as a second plate member, and a table on which the silicon wafer 61 is placed. 63, and a bonding apparatus 60 having a configuration such as a high-voltage power supply 64 connected to the table 63 and the glass wafer 62.

  In the bonding apparatus 60, the contacted silicon wafer 61 and glass wafer 62 are heated at a high temperature of 400 ° C. to 500 ° C. by a heating device (not shown), and the high voltage power source 64 uses the glass wafer 62 side as a cathode from 500V. A DC high voltage of about 1000V is applied.

  As a result, a large electrostatic attractive force is generated between the silicon wafer 61 and the glass wafer 62, and the silicon wafer 61 and the glass wafer 62 are firmly bonded by chemical bonding at the interface.

In addition, as a method of joining two types of plate-like members, a method of joining the plate-like member by activating the joining surface of the plate-like member with an energy wave such as plasma or ion beam has been proposed (for example, Patent Document 5, Or refer to Patent Document 6.)
JP 2001-351997 A JP 2004-88082 A JP 2001-64041 A JP 2005-187321 A JP 2006-73780 A JP 2006-248895 A

  In glass wafers used in solid-state imaging devices as described in Patent Documents 1 and 2, light is efficiently introduced into the solid-state imaging device, and high transmittance characteristics are required. An optical function imparting film (referred to as an antireflection film or an AR film) such as MgF2, SiO, or SiO2 film is formed on the surface.

  However, a transparent glass wafer having a thermal expansion coefficient close to that of Si, such as “Pyrex (registered trademark) glass”, is used for the glass wafer. However, the glass wafer is made of a material different from that of the optical function imparting film and has a different coefficient of thermal expansion. The glass wafer is warped by heating in the bonding process. For this reason, the joining defect of a solid-state image sensor wafer and a glass wafer generate | occur | produced, and it became a big problem in the joining process of a solid-state imaging device.

  The surface of the member to be joined is preferably mirror-finished with a surface roughness of 1 nm or less, but the surface roughness of the optical function imparting film may be 10 nm or more, or 10 nm or more. There are many cases. Further, the optical function-imparting film may contain a fluorine compound that is water repellent, and the film density varies greatly depending on the film formation conditions, so there are fine defects, which may be unsuitable for bonding methods such as anodic bonding. .

  The present invention has been made for such a problem, and while maintaining the performance of the optical function-imparting film, the solid-state imaging device that bonds the solid-state imaging device wafer and the glass wafer well with high confidentiality can be bonded. It is an object to provide a method and a solid-state imaging device.

  In order to achieve the above object, according to the present invention, a first plate-like member on which a solid-state image sensor is formed and an optical function-imparting film for antireflection are formed on the surface. The second plate member and the spacer, which are joined to each other by providing a gap between the first plate member and the second plate member via a spacer member. In the joining method with a member, the optical function imparting film surface is processed.

  According to the invention of claim 1, an optical function comprising a solid-state imaging device wafer on which a solid-state imaging device as a first plate-like member is formed, and an AR film for the purpose of preventing reflection as a second plate-like member. The glass wafer on which the application film is formed is bonded with a gap between the glass wafer and the glass wafer. In the bonding, a direct bonding method such as anodic bonding or surface active bonding is used. At the time of bonding, the optical function imparting film is processed so as to be suitable for bonding.

  As a result, the solid-state imaging device wafer and the spacer are bonded with high confidentiality, and as a result, the solid-state imaging device wafer and the glass wafer are bonded with high confidentiality and the performance of the optical function imparting film is impaired. There is no.

  According to a second aspect of the present invention, in the first aspect of the present invention, the second plate-like member obtained by processing the surface of the optical function-imparting film and the third member having the shape of the spacer member. After joining the plate-like member, the third plate-like member is processed into the shape of the spacer member.

  According to invention of Claim 2, the 3rd plate-shaped member used as a spacer member to the 2nd plate-shaped member in which the optical function provision film | membrane surface by which the process suitable for joining was given with respect to the surface was formed is provided. After being joined, the third plate member is processed into a spacer member shape through various processes such as etching.

  Thereby, a solid-state image sensor wafer and a spacer are joined with high confidentiality, and as a result, a solid-state image sensor wafer and a glass wafer are favorably joined with high confidentiality.

  The invention described in claim 3 is characterized in that in the invention described in claim 1 or 2, the optical function imparting film is an oxide film, a nitride film, or a fluoride film.

  According to the invention of claim 3, when the optical function-imparting film is activated and smoothed by plasma, the surface property of the optical function-imparting film efficiently becomes the most suitable surface property for bonding, and the solid-state imaging device wafer and glass The wafer is well bonded with high confidentiality.

  According to a fourth aspect of the present invention, in the invention according to any one of the first, second, or third aspect, the optical function imparting film is an antireflection film.

  According to the fourth aspect, when the optical function-imparting film is activated and smoothed by plasma, the film thickness hardly changes and the optical function is not affected.

  According to a fifth aspect of the present invention, in the invention according to any one of the first, second, third, or fourth aspect, the processing to the optical function-imparting film includes surface roughness, constituent elements, and density. It is characterized in that the surface property of the optical function-imparting film including the value is changed.

  According to the fifth aspect, the surface properties including the surface roughness, constituent elements, and density of the optical function imparting film are changed to conditions suitable for bonding by polishing, changing the film forming conditions, or the like. Thereby, a solid-state image sensor wafer and a glass wafer are favorably bonded with high confidentiality.

  According to a sixth aspect of the present invention, in the invention according to any one of the first, second, third, or fourth aspect, the first plate-shaped member is the first plate-shaped member. The optical function-imparting film on the joint surface to be joined to the plate-like member 2 is removed.

  According to the sixth aspect of the present invention, the optical function imparting film formed on the bonding surface where the solid-state image sensor wafer is joined to the glass wafer is removed by a method such as etching, and the solid-state image sensor wafer is sandwiched without sandwiching the optical function imparted film. Are bonded to the glass wafer. Thereby, a solid-state image sensor wafer and a glass wafer are favorably bonded with high confidentiality.

  The invention described in claim 7 is the invention described in any one of claims 1, 2, 3, or 4, wherein the processing of the optical function-imparting film is performed by activating the surface of the optical function-providing film with plasma. It is characterized by making it.

  According to the seventh aspect, the optical function imparting film surface is activated by the plasma, and the solid-state imaging device wafer and the glass wafer are favorably bonded with high confidentiality by the surface active bonding.

  The invention described in claim 8 is characterized in that, in the invention described in any one of claims 1, 2, 3, or 4, the processing to the optical function imparting film is smoothing by plasma etching. It is said.

  According to claim 8, by activating and smoothing the optical function imparting film with plasma, unlike the smoothing by polishing, no polishing residue or the like remains on the smoothed surface, and the solid-state imaging device wafer and the glass wafer Is well bonded with stable high confidentiality.

  The invention according to claim 9 is the invention according to any one of claims 1 to 8, wherein the optical function imparting film includes the first plate-like member, the second plate-like member, and the like. For the desired thickness of the optical function-imparting film that is required after bonding, the thickness is changed to the surface of the second plate-like member by the amount of change in the thickness of the optical function-imparting film due to the processing. It is characterized by forming.

  According to the ninth aspect, even when the surface properties of the optical function-imparting film such as roughness and contained elements are controlled, even if the thickness changes and the optical properties change, the optical properties are maintained by performing smoothing. It becomes possible to do.

  As described above, according to the solid-state imaging device joining method and solid-state imaging device of the present invention, the optical function-imparting film formed on the glass wafer is suitable for joining without degrading the performance of the optical function-giving film. The solid-state imaging device wafer and the glass wafer are well bonded with high confidentiality.

  A preferred embodiment of a solid-state imaging device joining method and a solid-state imaging device according to the present invention will be described below in detail with reference to the accompanying drawings.

  FIG. 1 shows an outline of a joining process in a joining method for joining a solid-state imaging device and a joining device for joining the solid-state imaging device according to the present invention.

  In the bonding apparatus, the solid-state imaging device wafer 10 as the first plate-like member and the glass wafer 11 formed of glass as the second plate-like member are first placed under a reduced pressure in the chamber, and plasma processing is performed.

  Thereby, the surfaces of the solid-state imaging device wafer 10 and the glass wafer 11 are activated, and are smoothed and hydrophilized.

  Subsequently, the solid-state imaging device wafer 10 and the glass wafer 11 are returned to the atmosphere, and the entire bonding surfaces of both members are brought into close contact with each other, and temporary bonding is performed. After the temporary bonding, the solid-state imaging device wafer 10 and the glass wafer 11 are pressurized and heated by a heating device (not shown), and the temperature is increased to a bonding temperature (for example, 400 ° C. to 500 ° C.). In this state, a DC high voltage (for example, 500 V to 1000 V) is applied by the high voltage power supply 16 with the glass wafer 11 side as a cathode.

  As a result, a large electrostatic attraction is generated between the solid-state imaging device wafer 10 and the glass wafer 11, and the solid-state imaging device wafer 10 and the glass wafer 11 are firmly bonded by chemical bonding at the interface.

  In the above bonding method, the solid-state imaging device wafer 10 and the glass wafer 11 are mirror-finished, and preferably have a flatness of 100 μm and a surface roughness of 1 nm or less.

  Further, in the bonding method according to the present invention and the bonding apparatus for manufacturing the bonding member according to the present invention, not only the above-described bonding process, but any bonding process may be used as long as it is a known bonding process involving a heating process. However, it can be suitably used.

  FIG. 2 is a perspective view showing an external shape of the solid-state imaging device according to the embodiment of the present invention. The solid-state imaging device 1 includes a solid-state imaging element chip 2 provided with a solid-state imaging element 3, a frame-shaped spacer 5 that is attached to the solid-state imaging element chip 2 and surrounds the solid-state imaging element 3, and is attached to the spacer 5 and is solid. It is comprised from the cover glass 4 which seals the image pick-up element 3. FIG.

  The solid-state image pickup device chip 2 includes a rectangular chip substrate formed by cutting the solid-state image pickup device wafer 10 with a dicing device or the like, a solid-state image pickup device 3 formed on the chip substrate, and an outside of the solid-state image pickup device 3. A plurality of pads (electrodes) 6 are arranged for wiring with the outside. As a material of the chip substrate, for example, a silicon single crystal is used.

  The cover glass 4 is formed by cutting the glass wafer 11 by dicing or the like. The cover glass 4 is made of a transparent glass having a thermal expansion coefficient close to that of silicon, such as “Pyrex (registered trademark) glass”, and has a thickness of, for example, about 500 μm. On the surface of the cover glass 4, an optical function imparting film made of an AR film for the purpose of preventing reflection, such as an oxide film, a nitride film, or a fluoride film, such as MgF2, SiO, or SiO2 film, is formed.

  The spacer 5 is an inorganic material and is preferably made of a material having similar physical properties such as a thermal expansion coefficient to the chip substrate and the cover glass 4, and therefore, for example, polycrystalline silicon is used. The spacer 5 is formed in the shape of the spacer 5 by a method such as dry etching after a polycrystalline silicon wafer as a third plate member is bonded to the glass wafer 11, or as the third plate member. The polycrystalline silicon wafer may be previously formed into the shape of the spacer 5 and then bonded to the glass wafer 11 on which the optical function providing film is formed.

  The spacer 5 is bonded to the solid-state imaging device chip 2 and the cover glass 4 by a direct bonding method such as anodic bonding or surface active bonding.

  Next, a first embodiment of the solid-state imaging device joining method according to the present invention will be described. FIG. 3 is a cross-sectional view showing a joining method of the solid-state imaging device according to the first embodiment.

  As shown in FIG. 3 (a1) and FIG. 3 (a2), MgF2 is formed on one surface of the glass wafer 11 as the second plate member, which becomes the cover glass 4 by being cut by a dicing apparatus or the like. An optical function imparting film 12 made of an AR film such as SiO, SiO 2 film or the like is formed.

  At this time, the optical function imparting film 12 is preferably formed to the entire surface of the glass wafer 11 or the vicinity of the outer periphery of the surface (for example, 0.2 mm from the outer periphery of the glass wafer 11, preferably 0.1 mm).

  Thereby, after bonding the solid-state imaging device wafer 10 and the glass wafer 11 shown in FIG. 1, the outer peripheral portion is locally formed in the outer peripheral portion by the gap generated by the optical function imparting film 12 not being formed in the vicinity of the outer peripheral portion of the glass wafer 11. Stress concentration is prevented, and damage to the solid-state imaging device wafer 10 and the glass wafer 11 is prevented.

  As shown in FIGS. 3 (b1) and 3 (b2), the spacer 5 is bonded to the glass wafer 11 on which the optical function imparting film 12 is formed. The spacers 5 are formed in advance so as to surround a plurality of solid-state image pickup devices 3 formed on the solid-state image pickup device wafer 14 as the first plate-like member, which becomes the solid-state image pickup device chip 2 by being individually cut by dicing or the like. Is formed.

  When the spacer 5 is bonded to the glass wafer 11, it is bonded by a direct bonding method such as anodic bonding. At this time, the optical function imparting film 12 is smoothed by plasma etching, so that the surface roughness that is usually 10 nm or more is changed to Rrms <2 nm. More preferably, it should be changed to Rrms <0.5 nm.

  Thus, by changing the surface properties of the optical function-imparting film 12, the surface of the optical function-imparting film 12 becomes closer to a mirror surface suitable for bonding, and is bonded well with high confidentiality.

  The change in the surface properties of the optical function-providing film 12 is not limited to plasma etching, but the surface roughness, constituent elements, and density of the optical function-providing film 12 can be changed by methods such as polishing, reflow, ion implantation, wet etching, and annealing. The value may be changed, and the surface property may be changed either when the optical function imparting film 12 is formed or after the film formation.

  Further, as shown in FIG. 3B 2, the processing of the optical function imparting film 12 is performed only on the optical function imparting film 12 on the joint surface where the solid-state imaging element wafer 14 and the glass wafer 11 are joined via the spacer 5. It is more desirable to be processed. As a result, the optical function imparting film 12 may be deteriorated in properties such as antireflection due to processing such as polishing, but unlike the case where the entire surface is processed as shown in FIG. Only the part to be joined is processed, and only the processed part 13 is deteriorated.

  Since the spacer 5 is bonded to the processed portion 13 as shown in FIG. 3 (c2), the light incident on the solid-state imaging device 3 is not affected, and the optical function imparting film 12 in the portion where the light enters is not affected. The function is not impaired, and the solid-state imaging device wafer 14 and the glass wafer 11 are bonded well with high confidentiality.

  The bonded solid-state imaging device wafer 14 and glass wafer 11 are cut by a dicing device or the like and divided into individual solid-state imaging devices.

  Next, a second embodiment of the solid-state imaging device joining method according to the present invention will be described. FIG. 4 is a cross-sectional view illustrating a solid-state imaging device joining method according to the second embodiment.

  As shown in FIGS. 4 (a1) and 4 (a2), an optical function imparting film 12 made of an AR film such as MgF 2, SiO, or SiO 2 film is formed on one surface of the glass wafer 11.

  At this time, the optical function imparting film 12 is preferably formed to the entire surface of the glass wafer 11 or the vicinity of the outer periphery of the surface (for example, 0.2 mm from the outer periphery of the glass wafer 11, preferably 0.1 mm).

  As shown in FIG. 4B1 and FIG. 4B2, the spacer 5 is bonded to the glass wafer 11 on which the optical function imparting film 12 is formed. The spacers 5 are formed in advance so as to surround a plurality of solid-state image sensors 3 formed on the solid-state image sensor wafer 14.

  When bonding the spacer 5 to the glass wafer 11, a surface active bonding method is used in which the surfaces of the optical function imparting film 12 are activated and smoothed by a method such as plasma irradiation. At this time, as shown in FIG. 4 (b2), the surface is masked leaving the optical function imparting film 12 on the bonding surface where the solid-state imaging device wafer 14 and the glass wafer 11 are bonded via the spacer 5. Unlike the case where the entire surface is activated and smoothed as shown in 4 (b1), only the optical function imparting film 12 on the bonding surface is activated and smoothed.

  As a result, the optical function imparting film 12 may be deteriorated in properties such as antireflection due to plasma irradiation, but only the portion where the spacer 5 is joined is activated and smoothed, and only the activated portion 15 is deteriorated. . Since the spacer 5 is bonded to the activated portion 15, the light incident on the solid-state imaging device 3 is not affected, and the function of the optical function imparting film 12 in the portion where the light is incident is not impaired. The wafer 11 is well bonded with high confidentiality.

  The bonded solid-state imaging device wafer 14 and glass wafer 11 are cut by a dicing device or the like and divided into individual solid-state imaging devices.

  Next, a third embodiment of the solid-state imaging device joining method according to the present invention will be described. FIG. 5 is a cross-sectional view illustrating a solid-state imaging device joining method according to the third embodiment.

  In the third embodiment, as shown in FIG. 5A1, an optical function imparting film 12 made of an AR film such as MgF2, SiO, or SiO2 film is formed on one surface of the glass wafer 11. .

  At this time, the optical function imparting film 12 is preferably formed to the entire surface of the glass wafer 11 or the vicinity of the outer periphery of the surface (for example, 0.2 mm from the outer periphery of the glass wafer 11, preferably 0.1 mm).

  As shown in FIG. 5 (b1), the spacer 5 is bonded to the glass wafer 11 on which the optical function imparting film 12 is formed. The spacers 5 are formed in advance so as to surround a plurality of solid-state image sensors 3 formed on the solid-state image sensor wafer 14.

  When the spacer 5 is bonded to the glass wafer 11, the optical function imparting film 12 on the bonding surface where the solid-state imaging device wafer 14 and the glass wafer 11 are bonded via the spacer 5 is etched or diced. Then, as shown in FIG. 5C1, the glass wafer 11 and the spacer 5 are directly bonded. The spacer 5 and the glass wafer 11 are bonded by a direct bonding method such as anodic bonding or surface activated bonding. Since the spacer 5 and the glass wafer 11 are bonded without interposing the optical function imparting film 12, they are bonded well with high confidentiality.

  Further, in the third embodiment, as shown in FIG. 5 (a2), the spacer 5 is joined by a direct joining method, or polycrystalline silicon as a third plate member joined in advance to the glass wafer 11. By processing the wafer by a method such as dry etching, the spacer 5 is formed on the glass wafer 11 on which the optical function imparting film 12 is not formed. Thereafter, as shown in FIG. 5C2, an optical function imparting film 12 may be formed on the glass wafer 11 on which the spacer 5 is not formed.

  Thereby, the solid-state image sensor wafer 14 and the glass wafer 11 are favorably bonded with high confidentiality without deteriorating the performance of the optical function imparting film 12.

  When the optical function imparting film 12 is removed by a method such as etching or dicing, a plurality of optical function imparting films 12 are formed by forming a plurality of grooves in the vertical and horizontal directions with respect to the optical function imparting film 12 that is not removed. You may divide into. Accordingly, when heating is performed during bonding, warpage caused by a difference in thermal expansion coefficient between the optical function imparting film 12 and the glass wafer 11 is reduced, and the solid-state imaging element wafer 14 and the glass wafer 11 are high. It becomes possible to join well with confidentiality.

  As described above, according to the solid-state imaging device joining method and the solid-state imaging device according to the present invention, when maintaining the performance of the optical function imparting film and heating and joining the plate-like members having different thermal expansion coefficients. In addition, the state of the bonding surface is changed to a state suitable for bonding, and the solid-state imaging device wafer and the glass wafer can be bonded well with high confidentiality.

  In the present embodiment, the optical function imparting film 12 is formed only on one side. However, the present invention is not limited thereto, and may be formed on both sides of the glass wafer 11 as shown in FIG. It can be suitably implemented.

  When the optical function imparting film 12 is formed on both surfaces, as shown in FIGS. 6 (b1) and 6 (b2), the solid-state imaging device wafer 14 and the glass wafer 11 are bonded by a method involving heating. Due to the difference in thermal expansion coefficient, the solid-state imaging device wafer 14, the glass wafer 11, and the optical function imparting film 12 are bonded in a state of being expanded with different lengths. Since the glass wafer 11 cooled after the bonding and the optical function-imparting film 12 contract with different lengths, the glass wafer 11 having the optical function-imparting film 12 formed only on one side is as shown in FIG. Warping occurs. As shown in FIG. 6 (c1), the glass wafer 11 having the optical function imparting films 12 formed on both sides has the same upper and lower shrinkage lengths, so that the difference in expansion caused by the difference in thermal expansion coefficient is alleviated. And reducing the warpage of the glass wafer.

  Thereby, the solid-state imaging device wafer 14 and the glass wafer 11 can be favorably bonded with high confidentiality.

  Further, in the present embodiment, the optical function imparting film 12 formed on the glass wafer 11 is formed with a normally required film thickness (for example, 100 nm or more and 500 nm or less), but the present invention is not limited thereto. It is thicker than the film thickness of the optical function imparting film 12 required after bonding the solid-state imaging device wafer 14 and the glass wafer 11 (for example, 50 nm thicker than the normal film thickness. Desirably, 100 nm from the normal film thickness). Thick.) It may be formed.

  Thereby, even if the thickness changes and the optical characteristics change when controlling the surface properties of the optical function imparting film 12 such as roughness and contained elements, smoothing is performed to reduce the thickness to the required thickness. Thus, the optical characteristics can be maintained. The reduction in thickness is not limited to plasma etching, and may be performed using a method such as polishing.

Schematic of the joining process in the joining apparatus which joins this solid-state imaging device. 1 is a perspective view of a solid-state imaging device according to the present invention. Sectional drawing which showed 1st Embodiment of the joining method of the solid-state imaging device which concerns on this invention. Sectional drawing which showed 2nd Embodiment of the joining method of the solid-state imaging device which concerns on this invention. Sectional drawing which showed 3rd Embodiment of the joining method of the solid-state imaging device which concerns on this invention. Sectional drawing which showed the joining method at the time of forming the optical function provision film | membrane on both surfaces. The schematic diagram which showed the joining apparatus of anodic bonding.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Solid-state imaging device, 2 ... Solid-state image sensor chip, 3 ... Solid-state image sensor chip, 4 ... Cover glass, 5 ... Spacer, 6 ... Pad, 11 ... Glass wafer (glass wafer, 2nd plate-shaped member), 12 ... optical function imparting film, 13 ... processed part, 14 ... solid-state image sensor wafer (first plate-like member), 15 ... activated part

Claims (15)

The first plate member on which the solid-state imaging element is formed and the second plate member on the surface of which the optical function-imparting film for the purpose of preventing reflection is disposed via the spacer member, thereby the first plate. In the joining method of the second plate-shaped member and the spacer member, which is joined by providing a gap between the shaped member and the second plate-shaped member,
A method of joining a solid-state imaging device, wherein the surface of the optical function imparting film is processed.   After joining the second plate-like member processed on the surface of the optical function imparting film and the third plate-like member having the shape of the spacer member, the third plate-like member is 2. The joining method for a solid-state imaging device according to claim 1, wherein the spacer member is processed into a shape of a spacer member.   The solid-state imaging device joining method according to claim 1, wherein the optical function imparting film is an oxide film, a nitride film, or a fluoride film.   The solid-state imaging device joining method according to claim 1, wherein the optical function imparting film is an antireflection film.   The processing to the optical function-imparting film is to change the surface properties of the optical function-imparting film including values of surface roughness, constituent elements, and density. 5. The joining method of the solid-state imaging device of any one of 4.   The processing into the optical function-imparting film is to remove the optical function-imparting film on a joint surface where the first plate-like member is joined to the second plate-like member. Item 5. The method for joining a solid-state imaging device according to any one of Items 1, 2, 3, and 4.   5. The solid according to claim 1, wherein the processing to the optical function-imparting film is to activate a surface of the optical function-imparting film with plasma. A method for joining imaging devices.   The solid-state imaging device joining method according to claim 1, wherein the processing to the optical function imparting film is smoothing by plasma etching.   The optical function-imparting film is formed by performing the optical function on the desired thickness of the optical function-imparting film required after the first plate member and the second plate member are joined. 9. The solid-state imaging device bonding according to claim 1, wherein the thickness is changed on the surface of the second plate-like member by an amount corresponding to the change in thickness of the applied film. 10. Method. The first plate member on which the solid-state imaging element is formed and the second plate member on the surface of which the optical function-imparting film for the purpose of preventing reflection is disposed via the spacer member, thereby the first plate. In a solid-state imaging device manufactured by bonding with a gap between the plate-shaped member and the second plate-shaped member,
A solid-state imaging device manufactured by processing the surface of the optical function imparting film.   After joining the second plate-like member processed on the surface of the optical function imparting film and the third plate-like member having the shape of the spacer member, the third plate-like member is The solid-state imaging device according to claim 10, wherein the solid-state imaging device is manufactured by processing into a shape of a spacer member.   The solid-state imaging device according to claim 10, wherein the optical function imparting film is an oxide film, a nitride film, or a fluoride film.   The solid-state imaging device according to claim 10, wherein the optical function imparting film is an antireflection film.   14. The solid-state imaging device according to claim 10, wherein the processing to the optical function-imparting film is to activate the optical function-imparting film with plasma. .   The solid-state imaging device according to claim 10, wherein the processing of the optical function imparting film is smoothing by plasma etching.

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