JP2008182196A - Electronic device package and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic device package by which thinning and high reliability are attained. <P>SOLUTION: In the electronic device package, first and second plate-like cover substrates (15, 16) are joined on an upper and a lower parts of a plate-like sensor substrate 14 with the sensor substrate located between the first and the second cover substrates. The sensor substrate 14 includes: a first detecting portion 20A and a second detecting portion 20B as a detecting means 19; an outer peripheral portion of the sensor substrate 14 as a frame surrounding the detecting means 19 through space 17; at least two beams 18a, 18b joining the detecting means 19 with the outer peripheral portion of the sensor substrate 14; and an electrode 21 which is disposed at the outer peripheral portion of the sensor substrate 14, and is electrically connected to the detecting means 19. The first cover substrate 15 or the second cover substrate 16 includes a throughhole 25 in which an inner wall of its end face is brought into contact with at least one portion of the electrode 21 to attain such thinning and high reliability. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electronic element package such as an acceleration sensor and a manufacturing method thereof.

  In the electronic element package described in Patent Document 1 shown in FIG. 19 and the like, the acceleration sensor chip 1 is accommodated in a package having a recess 12, and the acceleration sensor chip 1 is supported by a substrate 2 fixed at the center. 3 and a weight portion 4 disposed around the support portion 3. The weight portion 4 is suspended by being coupled to the other end side of the detection beam 5 whose one end side is connected to the upper portion of the support portion 3. The support portion 3, the weight portion 4, and the detection beam 5 are integrally formed of a semiconductor substrate by a micromachine technique.

  A detection element 6 that changes the output signal corresponding to the distortion caused by the acceleration applied to the weight portion 4 is formed above the detection beam 5. The substrate 2 is fixed to the inner bottom surface of the package with an adhesive 7.

  The bonding pad 8 formed on the upper end surface of the support portion 3 and the detection element 6 are electrically connected by a lead (not shown). The bonding pad 8 is connected to an external lead terminal 9 formed on the package side by a gold wire 10. The external lead terminal 9 is connected to an electrode terminal 11 formed on the bottom surface of the package by a conductive film formed along the package wall. 13 is a cap.

  Further, in Patent Document 2, as shown in FIG. 20, a partition wall 53 is formed on one surface of an element substrate 52 on which an electronic element 51 is formed so as to surround the electronic element 51, and a through electrode 54 is provided. The electronic device 51 is sealed by closing the opening of the partition wall portion 53 with the cover substrate 55. Reference numeral 56 denotes an electrode formed on the outside of the cover substrate 55, which is electrically connected to the through electrode 54 and leads out the electrode of the electronic element 51 to the outside.

  21 and 22 show an electronic element package described in Patent Document 3. FIG. FIG. 21 is an exploded view before the lower glass substrate 81 and the upper glass substrate 82 are bonded together, and FIG. 22 is a cross-sectional view taken along the line XX of FIG. 21 after the bonding.

The angular velocity detection unit 83 formed on the lower glass substrate 81 is a movable side where both ends 83 a and 83 b are supported by the lower glass substrate 81 and the middle 83 c is not in contact with the lower glass substrate 81. The upper glass substrate 82 is bonded to a frame portion 84 provided on the outer peripheral portion of the lower glass substrate 81 to be hermetic sealed. In the external lead electrode, signal output portions 85 a, 85 b, 85 c are formed on the lower glass substrate 81 separately from the frame portion 84, and the signal output portions 85 a, 85 b, 85 c are bonded to the upper glass substrate 82 to form via holes 86. It is pulled out to the outside.
JP 2006-170856 A JP-A-6-318625 JP 2000-186931 A

  In the configuration of Patent Document 1, it is difficult to reduce the thickness even if the support portion 3, the weight portion 4, and the detection beam 5 are integrally formed of a semiconductor substrate by a micromachine technique. On the other hand, in the configurations of Patent Documents 2 and 3, it is possible to reduce the thickness, but it is currently required to improve the reliability of the hermetic seal structure.

  Further, in the configuration of Patent Document 2, it is necessary to prepare a cover substrate 55 in which the through electrode 54 is formed in advance, and to bond the cover substrate 55 to the element substrate 52. Even in the configuration of Patent Document 3, it is necessary to form the via hole 86 in advance.

  An object of the present invention is to provide an electronic device package that can be thinned and does not require the formation of a through electrode or a via hole as an external lead electrode.

  The electronic device package according to claim 1 of the present invention is an electronic device in which a plate-like sensor substrate on which detection means is formed is centered, and plate-like first and second cover substrates are directly or indirectly joined to the upper and lower sides thereof. In the element package, the sensor substrate includes at least a first detection unit and a second detection unit as the detection unit, a frame surrounding the detection unit via a space, and at least two connecting the detection unit and the frame. And an electrode disposed on the frame and electrically connected to the detection means, wherein the inner wall of the end surface of the first cover substrate or the second cover substrate is in contact with at least a part of the electrode. A through hole is provided.

  The electronic device package according to claim 2 of the present invention is the electronic device package according to claim 1, wherein the electrode is surrounded by a side of a part of the frame facing the detection unit through a space and an outer periphery of the frame. It is characterized by being disposed in the region.

  According to a third aspect of the present invention, in the electronic device package according to the first aspect, a concave portion is formed at a position corresponding to the detection portion on a surface of the cover substrate facing the sensor substrate.

According to a fourth aspect of the present invention, in the electronic device package according to the first aspect, the sensor substrate is formed such that a portion of the detection means is thinner than a periphery thereof.
According to a fifth aspect of the present invention, there is provided a method for manufacturing an electronic device package, wherein the plate-like sensor substrate on which the detecting means is formed is centered, and the plate-like first and second cover substrates are directly or indirectly provided above and below the plate-like sensor substrate. When the bonded electronic device package is manufactured, the first and second cover substrates corresponding to the sensor substrate are formed above and below the first wafer on which a large number of sensor substrates on which detection parts are formed are taken as the center. The second and third wafers in which a large number of wafers are removed are bonded to form a bonded wafer, and the bonded wafer is cut to be separated into electronic element packages.

  According to a sixth aspect of the present invention, there is provided an electronic element package in which an element substrate on which an electronic element is formed and a cover substrate are joined, and the electronic element is surrounded by a partition wall in a gap between the element substrate and the cover substrate. In addition, the cover substrate has an introduction hole corresponding to the first electrode of the element substrate, and the shape of the introduction hole is configured to have a diameter that decreases toward the element substrate. The end of the element substrate is closed by a second electrode formed on the cover substrate, and the first electrode and the second electrode are in contact with each other.

According to a seventh aspect of the present invention, in the electronic device package according to the sixth aspect, a groove extending toward the device substrate is formed in the inner periphery of the introduction hole.
According to an eighth aspect of the present invention, there is provided an electronic device package mounting method comprising: joining an element substrate on which an electronic element is formed and a cover substrate; and surrounding the electronic element by a partition wall in a gap between the element substrate and the cover substrate. In addition to sealing, an electronic element package in which an introduction hole having a diameter decreasing toward the element substrate corresponding to the first electrode of the element substrate is formed on the cover substrate is formed on the land formed on the substrate. In mounting, a conductive material is placed on the land at the mounting position of the substrate, and the electronic element package is pressed against the mounting position of the substrate with the introduction hole directed toward the substrate, to the land at the mounting position. The stacked conductive material is guided from the introduction hole of the electronic element package to the first electrode side of the element substrate, and the land of the substrate is interposed through the conductive material. Characterized by electrically connecting the electronic element of the element substrate.

  According to this configuration, an electronic device package capable of being thinned and highly reliable can be realized.

Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 10 and FIGS. 11 to 18. In addition, the same code | symbol is attached | subjected and demonstrated to what comprises the same effect | action.
(Embodiment 1)
1 to 4 show Embodiment 1 of the present invention.

  1A is a cross-sectional view of an electronic element package according to Embodiment 1 of the present invention, FIG. 1B is a top view, and FIG. 1C is a bottom view. FIG. 1A is a cross-sectional view taken along the line A-AA in FIG.

  This electronic element package is an acceleration sensor, with a plate-like sensor substrate 14 in the center, a plate-like first cover substrate 15 above the sensor substrate 14, and a plate-like first substrate below the sensor substrate 14. Two cover substrates 16 are provided, and the three substrates are joined.

  Holes 17A and 17B are formed in the sensor substrate 14 made of silicon or quartz by dry etching or the like as shown in FIG. 2A and FIG. 2B showing the B-BB cross section. A movable piece 19 supported from the outer peripheral portion is formed. A first detection unit 20 </ b> A is configured on the right side of the movable piece 19 with respect to the beam 18, and a second detection unit 20 </ b> B is configured on the left side of the beam 18.

  In the first and second detectors 20A and 20B, a Pt film having a thickness of 0.3 μm is formed on the movable piece 19 as shown in FIG. 2C showing the C-CC cross section of FIG. The PZT having a thickness of 2.75 μm is formed thereon, and the Au film having a thickness of 0.3 μm is further formed thereon.

  In the vicinity of the four corners of the sensor substrate 14, through holes 21a, 21b, 21c, 21d having electrodes formed on the inner periphery are formed as shown in FIG. 2A and FIG. 2D showing the D-DD cross section. The through holes 21a and 21b are connected to the Pt film and the Au film of the first detection unit 20A by wiring electrodes 22a and 22b formed on the sensor substrate 14, respectively. The through holes 21c and 21d are connected to the Pt film and the Au film of the second detection unit 20B by wiring electrodes 22c and 22d formed on the sensor substrate 14.

  The first cover substrate 15 made of silicon or quartz corresponds to the first and second detectors 20A and 20B as shown in FIG. 3A and FIG. 3B showing the E-EE cross section. A recess 23 is formed at the position by dry etching or the like.

  The second cover substrate 16 made of silicon or quartz corresponds to the first and second detectors 20A and 20B as shown in FIG. 3C and FIG. 3D showing the F-FF cross section. A recess 24 is formed at the position by dry etching or the like. Further, the second cover substrate 16 is shown in FIG. 3C, FIG. 3D showing the F-FF cross section, and FIG. 3E showing the G-GG cross section of FIG. 3C. In addition, through holes 25a, 25b, 25c, and 25d having electrodes formed on the inner periphery corresponding to the through holes 21a, 21b, 21c, and 21d of the sensor substrate 14 are formed.

Bonding of the sensor substrate 14 to the first cover substrate 15 and the second cover substrate 16 is performed in the following steps.
In FIG. 4A, an adhesive is provided around the outer peripheral portion of the upper surface and the lower peripheral portion of the sensor substrate 14, around the through holes 21 a to 21 d on the upper surface of the sensor substrate 14, and around the through holes 21 a to 21 d on the lower surface of the sensor substrate 14. 26 is applied.

  4B, the sensor substrate 14, the first cover substrate 15 and the second cover substrate 16 are bonded together, and then solder 27 is supplied from the through holes 25a to 25d as shown in FIG. 4C. Then, reflow is performed to form external connection terminals, and the assembly is completed.

  Here, the case of bonding using the adhesive 26 has been described as an example, but bonding can also be performed as follows. Specifically, energy such as plasma, atomic beam, or light energy is applied to the upper and lower surfaces of the sensor substrate 14, the lower surface of the first cover substrate 15, and the upper surface of the second cover substrate 16 in a vacuum chamber. After the pre-treatment of performing surface cleaning and activation by irradiation, the upper surface of the sensor substrate 14 and the lower surface of the first cover substrate 15 are brought into contact with each other in the same vacuum chamber and pressed, and bonded by a room temperature bonding process. To do. Further, the lower surface of the sensor substrate 14 and the upper surface of the second cover substrate 16 are brought into contact with each other and pressurized, and bonded by a room temperature bonding process. Thereafter, the solder 27 is supplied from the through holes 25a to 25d and reflowed to form external connection terminals, thereby completing the assembly.

Here, the configuration of the first embodiment will be described in comparison with the configurations of FIGS. 21 and 22 cited as conventional examples.
In the conventional example shown in FIGS. 21 and 22, the sealing structure by bonding the lower glass substrate 81 and the upper glass substrate 82 is a narrow frame portion 84 provided on the outer peripheral portion of the lower glass substrate 81. In addition, the interior of the electronic device package is sealed by adhering to the upper glass substrate 82 only in a small area with the signal output portions 85a, 85b, and 85c formed in an island shape independently of the frame portion 84. . In such a seal structure, gap areas 87a, 87b, 87c that do not effectively act on the hermetic seal exist between the frame portion 84 and the signal output portions 85a, 85b, 85c.

  On the other hand, the configuration of the first embodiment is an electronic element package in which the sensor substrate 14 is centered and the plate-like first and second cover substrates 15 and 16 are directly or indirectly joined to the upper and lower sides thereof. The plate-shaped sensor substrate 14 on which the movable piece 19 as the detection means is formed has the first and second detection portions 20A and 20B and the first and second detection portions through the holes 17A and 17B as spaces. Arranged on the outer periphery of the sensor substrate 14, which is a frame surrounding 20 </ b> A and 20 </ b> B, at least two beams 18 a and 18 b that connect the movable piece 19 and the outer periphery of the sensor substrate 14, and the sensor substrate 14. The through holes 21a to 21d as electrodes electrically connected to the movable piece 19 are provided, and the inner walls of the end surfaces of the first cover substrate 15 or the second cover substrate 16 have through holes 21a to 21d. Since the through holes 25a to 25d as through holes that contact at least a part are provided, the upper surface of the sensor substrate 14 and the lower surface of the first cover substrate 15 are joined, and the lower surface of the sensor substrate 14 and the second cover substrate 16 are bonded. As shown in FIGS. 1B, 1C and 2A, the area where the through holes 21a to 21d of the sensor substrate 14 are formed is also the first cover substrate. 15 is an effective joint surface. Further, the sensor substrate 14 and the second cover substrate 16 are joined not only by the narrow frame portion 84 as shown in FIGS. 21 and 22, but through holes 21a to 21d of the sensor substrate 14 are formed. This area is also an effective joint surface with the second cover substrate 16.

  Therefore, in the first embodiment, the bonding area between the sensor substrate 14 and the first and second cover substrates 15 and 16 is larger than that of the conventional example shown in FIGS. 21 and 22 and effectively acts on the hermetic seal. Thus, the reliability of the seal is extremely high.

(Embodiment 2)
FIG. 5 shows a second embodiment of the present invention.
In the first embodiment, the sensor substrate 14 and the first and second cover substrates 15 and 16 are joined for each electronic element package. In the second embodiment, as shown in FIG. A first wafer 28 in which a large number of sensor substrates 14 are taken, and a second wafer 29 in which a large number of first cover substrates 15 are taken corresponding to the portions of the sensor substrates 14 of the first wafer 28 Then, a bonded wafer 31 is formed by bonding the third wafer 30 having a large number of second cover substrates 16 corresponding to the portions of the sensor substrates 14 of the first wafer 28, as shown in FIG. ), The bonded wafer 31 is cut by a dicing saw 32 and separated into electronic element packages 33.

(Embodiment 3)
In each of the above embodiments, the external connection terminals are formed near the four corners of the electronic element package. However, in the third embodiment shown in FIG. 6, the external connection terminals are formed at the corners of the electronic element package. Yes.

  FIG. 6A shows the sensor substrate 14 in this case, and arc-shaped electrodes 34a, 34b, 34c, and 34d are formed at corner portions. The electrodes 34a and 34b are connected to the Pt film and the Au film of the first detection unit 20A by wiring electrodes 35a and 35b formed on the sensor substrate 14. The electrodes 34c and 34d are connected to the Pt film and the Au film of the second detection unit 20B by wiring electrodes 35c and 35d formed on the sensor substrate 14. Similarly, electrodes 36a, 36b, 36c, and 36d are formed at the corners corresponding to the electrodes 34a to 34d on the second cover substrate 16, and as shown in FIG. The second cover substrates 15 and 16 are joined, solder 27 is applied across the electrodes 34b and 36b, and solder 27 is also applied to the electrodes 34c and 36c, the electrodes 34a and 36a, and the electrodes 34d and 36d. External connection terminals.

  Such an electronic device package can be formed by cutting the bonded wafer 31 by a dicing saw 32 into individual pieces as shown in FIG. In this case, in the state of the bonded wafer 31 before being cut by the dicing saw 32, after supplying solder to the through hole portion of the third wafer 30 and reflowing, external connection is performed as shown in FIG. 6B can be obtained by cutting the portion to be a terminal into pieces by cutting the position of the cutting line 37 with a dicing saw 32. The electronic device package 33 shown in FIG.

(Embodiment 4)
In the second embodiment, the bonded wafer 31 is cut by the dicing saw 32 and separated into the electronic element package 33. However, in the fourth embodiment, the dicing saw 32 is used to form FIGS. 7 (a) and 7 (b). As shown in FIG. 2, the first wafer 38 is cut into a plurality of aggregates 38a to 38n, and the second and third wafers 39 and 40 are also a plurality of aggregates 39a to 39n having the same size as the aggregates 38a to 38n. , 40a to 40n, and in the step shown in FIG. 7C, the aggregates 39a to 39n cut out from the second wafer 39 with the respective assemblies 38a to 38n cut out from the first wafer 38 as the center. 39 n and the aggregates 40 a to 40 n cut out from the third wafer 40 are joined to form a joined aggregate 41, and the joined aggregate 41 is separated into pieces by the dicing saw 32. Thereby, even if the original wafer size becomes large, the bonding process is assembled by the same apparatus.

(Embodiment 5)
8 and 9 show a fifth embodiment of the present invention.
In the first cover substrate 15 and the second cover substrate 16 of each of the above embodiments, the recesses 23 and 24 corresponding to the first and second detection units 20A and 20B of the sensor substrate 14 were formed. However, in the sensor substrate 14B of the fifth embodiment, as shown in FIG. 9, the first and second cover substrates 15B, 16B are not formed with the recesses 23, 24.

FIG. 8 shows the sensor substrate 14B in this case.
8B is a cross-sectional view taken along B-BB in FIG. 8A, FIG. 8C is a cross-sectional view taken along C-CC in FIG. 8A, and FIG. 8D is a cross-sectional view taken along D- in FIG. FIG. 8D is a sectional view of DD, and the sensor substrate 14B is formed such that the first and second detection portions 20A and 20B are thinner than the outer peripheral portion 42 of the sensor substrate 14 as shown in FIG.

  In the electronic device package according to the fifth embodiment, the first and second cover substrates 15B and 16B in which the recesses 23 and 24 are not formed are joined to the upper and lower surfaces of the sensor substrate 14B as shown in FIG. Supply and reflow to form external connection terminals and complete the assembly.

(Embodiment 6)
The sensor substrate of the electronic device package of each of the above embodiments has a cantilever structure in which one end on the center side of the first and second detection units 20A and 20B is supported by the beam 18, but FIG. As shown in FIG. 5B, the same configuration can be obtained by forming the holes 17A, 17B, 17C, and 17D so that both ends of the movable piece 19 are connected to and supported by the outer peripheral portion 42 of the sensor substrate 14 by the beam 43. Further, as shown in FIG. 10B, the same configuration can be obtained by forming the hole 17 so that the movable piece 19 is connected to and supported by the outer peripheral portion 42 of the sensor substrate 14 by a plurality of beams 43.

(Embodiment 7)
11 to 14 show a seventh embodiment of the present invention.
FIG. 11A shows a cross-sectional view of an electronic device package according to Embodiment 7 of the present invention, and FIG. 11B shows a bottom view.

This electronic element package A is configured by laminating an element substrate 58 shown in FIG. 12 and a cover substrate 59 shown in FIG.
As shown in FIGS. 12A and 12B, an electronic element 60 and a wiring electrode 61 as a first electrode are formed on one surface of the element substrate 58. The input / output lines of the electronic element 60 are electrically connected to the wiring electrode 61.

  As shown in FIGS. 13A and 13B, the cover substrate 59 has an electrode 62 as a second electrode corresponding to the position of the wiring electrode 61 of the element substrate 58, and the first of the element substrate 58. For example, a tapered introduction hole 63 whose diameter decreases toward the element substrate 58 is formed at a position corresponding to the electrode. An end of the introduction hole 63 on the element substrate 58 side is closed by an electrode 62 formed on the cover substrate 59. The introduction hole 63 can be formed by a laser, a chemical etching method, a dry etching method, a blast method, or the like.

  Further, the electrode 64 is formed in an annular shape on the element substrate 58 so as to surround the electronic element 60. On the cover substrate 59, electrodes 65 are formed in an annular shape corresponding to the electrodes 64 of the element substrate 58. In this embodiment, the wiring electrode 61 and the electrode 62 are made of the same material, for example, gold. The electrodes 64 and 65 are made of the same material, for example, gold.

  When the element substrate 58 and the cover substrate 59 are bonded to each other, for example, plasma, atomic beam, light in the vacuum chamber with respect to the surface of the wiring electrode 61, the surface of the electrode 64, the surface of the electrode 62, and the surface of the electrode 65. After the pretreatment in which surface cleaning and activation are performed by irradiating energy such as energy, the surface of the wiring electrode 61 of the element substrate 58 and the surface of the electrode 62 of the cover substrate 59 are brought into contact with each other in the same vacuum chamber. The surface of the electrode 64 of the element substrate 58 and the surface of the electrode 65 of the cover substrate 59 are pressed in a state where they are in contact with each other, and are bonded by a room temperature bonding process.

The joined annular electrode 64 and annular electrode 65 form a partition 66 that surrounds and seals the electronic element 60.
FIG. 14 shows a process of mounting the electronic device package A formed in this way on the land 68 formed on the substrate 67.

  First, as shown in FIG. 14A, solder 69 as a conductive material is stacked on the land 68 of the substrate 67. In FIG. 14B, the electronic device package A is pressed against the mounting position of the substrate 67 with the introduction hole 63 facing the substrate 67 with the solder 69 melted by reflow.

  As a result, the molten solder 69 is guided to the wiring electrode 61 side of the element substrate 58 through the introduction hole 63, and the solder 69 is connected to the electrode 62 of the cover substrate 59. When the solder 69 is solidified in this state, the land 68 formed on the substrate 67 is electrically connected to the electronic element 60 via the solder 69, the electrode 62, and the wiring electrode 61.

  Depending on the combination of the size of the introduction hole 63 and the wiring electrode 61 and the viscosity of the molten solder 69, bubbles may be present in the molten solder in the introduction hole during reflow. The bubbles in the molten solder may make the electrical connection between the electronic device 60 and the board land 68 unstable. In this case, although not shown, if an air escape hole is provided on the side surface of the introduction hole 63 to release bubbles in the solder at the time of melting, the influence of the bubbles in the molten solder on the electrical connection is reduced. Can do.

Further, according to this configuration, even when the distance 76 between the lands 68 is smaller than the size of the lands 68 on the substrate 67, a good mounting state can be obtained without generating a solder bridge.
In this embodiment, the solder 69 is used as the conductive material, but it can also be implemented with a conductive resin. In this case, the conductive resin before curing provided on the land 68 is pressed against the mounting position of the substrate 67 of the electronic element package A, so that the conductive resin before curing enters the introduction hole 63. The land 68 formed on the substrate 67 is electrically connected to the electronic element 60 through the conductive resin, the electrode 62 and the wiring electrode 61. A form in which the conductive resin is cured by applying heat is also effective.

(Embodiment 8)
FIG. 15 shows an eighth embodiment of the present invention.
In the seventh embodiment, the thickness of the element substrate 58 is about 0.2 to 0.3 mm, and the cover substrate 59 is a relatively thick electronic element package A having a thickness of 0.3 mm or more. As shown, the cover substrate 59 can be implemented similarly in the case of a relatively thick electronic device package having a thickness of 0.2 mm or less.

(Embodiment 9)
FIG. 16 shows Embodiment 9 of the present invention.
In the seventh embodiment, the inner peripheral surface of the introduction hole 63 is smooth. However, in the ninth embodiment shown in FIG. 16, a groove 70 extending toward the element substrate 58 is formed on the inner peripheral surface of the introduction hole 63. Is formed. By providing the groove 70 in this manner, the solder wettability is improved by the capillary phenomenon, and an electronic element package with more stable bonding quality can be obtained.

(Embodiment 10)
FIG. 17 shows a tenth embodiment of the present invention.
FIG. 17 shows the manufacturing process of the electronic element package.

As shown in FIG. 17A, the semiconductor wafer 71 has a large number of element substrates 58, and the cover wafer 72 has a plurality of cover substrates 59 similarly.
The electrodes 64 and 65 of the partition wall 66 are formed of a metal material on the semiconductor wafer 71 and the cover wafer 72 as a grid pattern by a sputtering or plating process.

  A bonded semiconductor wafer 73 in which the semiconductor wafer 71 and the cover wafer 72 are bonded and integrated by a normal temperature bonding process by activation by applying cleaning and applying a load in a vacuum chamber is diced as shown in FIG. The electronic device package A is cut into pieces by cutting with a saw 74.

(Embodiment 11)
In the tenth embodiment, one bonded semiconductor wafer 73 is cut by a dicing saw 74 and separated into electronic element packages A. However, as shown in FIG. The aggregates 75a to 75n are cut, the cover wafers 72A having the same size as the aggregates 75a to 75n are joined to the aggregates 75a to 75n, and the dicing saw 74 separates them. Thereby, even if the original wafer size becomes large, the bonding process can be assembled by the same apparatus.

  In Embodiment 9 described above, the groove 70 is provided for the purpose of improving the wettability of the inner peripheral surface of the introduction hole 63. However, the inner peripheral surface of the introduction hole 63 is formed of a mat surface and is made of a conductive material. It is also possible to form a film that improves the wettability with respect to the conductive material or improves the wettability with respect to the conductive material on the inner peripheral surface of the introduction hole 63.

(Embodiment 12)
In each of the embodiments shown in FIGS. 1 to 10, through holes 21 a to 21 d as electrodes disposed on the outer peripheral portion of the sensor substrate 14 and electrically connected to the movable piece 19 are provided, and the first cover substrate 15 or the first cover substrate 15 is provided. 2 The cover substrate 16 is provided with through holes 25a to 25d as through holes in which the inner walls of the end surfaces are in contact with the through holes 21a to 21d. The through holes in which the inner walls of the end surfaces are in contact with the through holes 21a to 21d Instead of the through-holes 25a to 25d formed, the through-holes whose diameter decreases toward the substrate 14 are formed in the same manner as the tapered introduction holes 63 of the embodiments shown in FIGS. In the same manner as in the case shown in FIG. 14, the electronic element package is pressed against the mounting position, and the conductive material stacked on the land at the mounting position is used as the electronic element package. It may be configured to electrically connect to lead to the side of the electrode of the sensor substrate 14 from the introduction hole.

(Embodiment 13)
In each of the embodiments and the twelfth embodiments shown in FIGS. 1 to 10, only the first cover substrate 15 and the second cover substrate 16 among the second cover substrates 16 sandwiching the sensor substrate 14 are arranged. Although the through hole in which the inner wall of the end surface is in contact with the through holes 21a to 21d is formed, the through hole in which the inner wall of the end surface is in contact with the through holes 21a to 21d is formed in both the first cover substrate 15 and the second cover substrate 16. You can also

  The present invention can contribute to the realization of an electronic device package that can be thinned and highly reliable.

Sectional drawing, the top view, and bottom view of the electronic device package in Embodiment 1 of this invention Plan view, B-BB sectional view, C-CC sectional view, D-DD sectional view of the sensor substrate of the same embodiment The bottom view and E-EE sectional view of the first cover substrate of the same embodiment, the bottom view, F-FF sectional view and G-GG sectional view of the second cover substrate Sectional view of the joining process of the embodiment Manufacturing process diagram in Embodiment 2 of the present invention The top view of the sensor substrate in Embodiment 3 of this invention, sectional drawing of the electronic element package which assembly was completed, and bottom view of the aggregate | assembly before cut | disconnecting Manufacturing process diagram according to Embodiment 4 of the present invention Plan view, B-BB sectional view, C-CC sectional view, and D-DD sectional view of a sensor substrate in Embodiment 5 of the present invention Sectional drawing of the electronic device package of the embodiment Plan view of sensor substrate of another embodiment The expanded sectional view and bottom view of the electronic device package in Embodiment 7 of this invention Sectional view and plan view of element substrate 58 of the same embodiment Sectional view and plan view of cover substrate 59 of the same embodiment Cross-sectional view of the mounting process of the same embodiment The expanded sectional view of the electronic device package in Embodiment 8 of this invention Enlarged bottom view and cross-sectional view of an electronic device package according to Embodiment 9 of the present invention Manufacturing process perspective view of the electronic device package in Embodiment 10 of this invention The manufacturing process perspective view of the electronic device package in Embodiment 11 of this invention Enlarged sectional view of the electronic device package of Patent Document 1 Enlarged sectional view of the electronic device package of Patent Document 2 The exploded perspective view of the electronic device package of patent document 3 Sectional view of electronic device package of Patent Document 3

Explanation of symbols

14 Sensor substrates 15 and 16 First and second cover substrates 17A to 17D Hole 18 Beam 19 Movable piece 20A First detector 20B Second detectors 21a to 21d Through holes 22a to 22d Wiring electrodes 23 and 24 Recesses 25a to 25d Through hole 26 Adhesive 27 Solder 28 First wafer 29 Second wafer 30 Third wafer 31 Bonded wafer 32 Dicing saw 33 Electronic element packages 34a to 34d Electrodes 35a to 35d Wiring electrodes 36a to 36d Electrodes 38a to 38n, 39a -39n, 40a-40n Assembly 41 Joint assembly 42 Outer peripheral portion 43 of sensor substrate 14 Beam A Electronic device package 58 Device substrate 59 Cover substrate 60 Electronic device 61 Wiring electrode (first electrode)
62 electrode (second electrode)
63 Tapered introduction hole 64 Electrode 65 Electrode 66 Partition part 67 Substrate 68 Land 69 Solder (conductive material)
70 Groove 71 Semiconductor wafer 72 Cover wafer 73 Bonded semiconductor wafer

Claims (8)

An electronic element package in which a plate-like sensor substrate on which detection means is formed is centered, and plate-like first and second cover substrates are directly or indirectly joined to the upper and lower sides thereof,
In the sensor substrate,
As the detection means, at least a first detection unit and a second detection unit,
A frame surrounding the detection means via a space;
At least two beams connecting the detection means and the frame;
An electrode disposed on the frame and electrically connected to the detection means;
In the first cover substrate or the second cover substrate,
An electronic device package having a through hole in which an inner wall of an end surface is in contact with at least a part of the electrode. The electrode;
The electronic device package according to claim 1, wherein the electronic element package is disposed in a region surrounded by a side of a part of the frame facing the detection unit via a space and an outer periphery of the frame. The electronic device package according to claim 1, wherein a concave portion is formed at a position corresponding to the detection portion on a surface of the cover substrate facing the sensor substrate. The sensor substrate is
The electronic device package according to claim 1, wherein a portion of the detecting means is formed to be thinner than its periphery. When manufacturing an electronic device package in which the plate-like sensor substrate on which the detection means is formed is centered and the plate-like first and second cover substrates are directly or indirectly joined to the upper and lower sides thereof,
A first wafer having a large number of sensor substrates on which detection portions are formed is centered on the top and bottom of the first wafer, and second and second cover substrates corresponding to the sensor substrate are numerous. 3 wafers are bonded to form a bonded wafer,
A method of manufacturing an electronic device package, wherein the bonded wafer is cut into individual electronic device packages. Bonding the element substrate on which the electronic element is formed and the cover substrate,
Surrounding and sealing the electronic element by a partition wall in the gap between the element substrate and the cover substrate,
The cover substrate has an introduction hole corresponding to the first electrode of the element substrate, and the shape of the introduction hole is configured to have a diameter that decreases toward the element substrate.
An electronic element package in which an end of the introduction hole on the element substrate side is closed by a second electrode formed on the cover substrate, and the first electrode and the second electrode are in contact with each other. The electronic device package according to claim 6, wherein a groove extending toward the device substrate is formed in an inner periphery of the introduction hole. The element substrate on which the electronic element is formed and the cover substrate are joined, and the electronic element is surrounded and sealed by a partition wall in a gap between the element substrate and the cover substrate. When mounting an electronic element package in which an introduction hole having a shape whose diameter decreases toward the element substrate corresponding to one electrode is formed on a land formed on the substrate,
A conductive material is stacked on the land at the mounting position of the substrate,
The conductive material stacked on the land at the mounting position by pressing the electronic element package against the mounting position of the substrate with the introduction hole directed toward the substrate is transferred from the introduction hole of the electronic element package to the element substrate. A method for mounting an electronic device package, wherein the electronic device package is led to the first electrode and electrically connects a land of the substrate and an electronic device of the device substrate through the conductive material.

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