JP2008182158A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2008182158A
JP2008182158A JP2007016129A JP2007016129A JP2008182158A JP 2008182158 A JP2008182158 A JP 2008182158A JP 2007016129 A JP2007016129 A JP 2007016129A JP 2007016129 A JP2007016129 A JP 2007016129A JP 2008182158 A JP2008182158 A JP 2008182158A
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JP
Japan
Prior art keywords
fet
layer
semiconductor device
semiconductor layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007016129A
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English (en)
Japanese (ja)
Other versions
JP2008182158A5 (https=
Inventor
Kohei Naito
耕平 内藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2007016129A priority Critical patent/JP2008182158A/ja
Priority to US12/020,982 priority patent/US20080210989A1/en
Publication of JP2008182158A publication Critical patent/JP2008182158A/ja
Publication of JP2008182158A5 publication Critical patent/JP2008182158A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2007016129A 2007-01-26 2007-01-26 半導体装置 Withdrawn JP2008182158A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007016129A JP2008182158A (ja) 2007-01-26 2007-01-26 半導体装置
US12/020,982 US20080210989A1 (en) 2007-01-26 2008-01-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007016129A JP2008182158A (ja) 2007-01-26 2007-01-26 半導体装置

Publications (2)

Publication Number Publication Date
JP2008182158A true JP2008182158A (ja) 2008-08-07
JP2008182158A5 JP2008182158A5 (https=) 2010-03-11

Family

ID=39725806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007016129A Withdrawn JP2008182158A (ja) 2007-01-26 2007-01-26 半導体装置

Country Status (2)

Country Link
US (1) US20080210989A1 (https=)
JP (1) JP2008182158A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009101870A1 (ja) * 2008-02-12 2011-06-09 日本電気株式会社 半導体装置
JP2015079800A (ja) * 2013-10-15 2015-04-23 富士通株式会社 半導体装置及びその製造方法
JP2016163017A (ja) * 2015-03-05 2016-09-05 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
JP2018093239A (ja) * 2018-03-12 2018-06-14 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2023189037A1 (https=) * 2022-03-29 2023-10-05

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7845622B2 (ja) * 2022-09-09 2026-04-14 住友電工デバイス・イノベーション株式会社 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260405A (ja) * 1996-03-27 1997-10-03 Mitsubishi Electric Corp 半導体装置とその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009101870A1 (ja) * 2008-02-12 2011-06-09 日本電気株式会社 半導体装置
JP2015079800A (ja) * 2013-10-15 2015-04-23 富士通株式会社 半導体装置及びその製造方法
JP2016163017A (ja) * 2015-03-05 2016-09-05 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
JP2018093239A (ja) * 2018-03-12 2018-06-14 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2023189037A1 (https=) * 2022-03-29 2023-10-05
WO2023189037A1 (ja) * 2022-03-29 2023-10-05 ヌヴォトンテクノロジージャパン株式会社 電力増幅半導体装置
JP7577895B2 (ja) 2022-03-29 2024-11-05 ヌヴォトンテクノロジージャパン株式会社 電力増幅半導体装置
US12278601B2 (en) 2022-03-29 2025-04-15 Nuvoton Technology Corporation Japan Power amplifier semiconductor device

Also Published As

Publication number Publication date
US20080210989A1 (en) 2008-09-04

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