JP2008169420A - Vacuum deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum deposition system capable of correctly performing the control of a vapor deposition rate to the body to be vapor-deposited. <P>SOLUTION: Regarding the vacuum deposition system, an evaporation source 2 and the body 3 to be vapor-deposited are arranged in a vacuum chamber 1, further, a space between the evaporation source 2 and the body 3 to be vapor-deposited is surrounded by a cylindrical body 4 heated at a temperature in which a substance in the vapor deposition source 2 is vaporized, and, in a state where the evaporation source 2 and the body 3 to be vapor-deposited are relatively moved, the substance 9 vaporized from the evaporation source 2 is made to arrive at the surface of the body 3 to be vapor-deposited through the cylindrical body 4, and vapor deposition is performed. The vacuum deposition system further comprises: breaking-down bodies 12 provided at the opening part 5 opposite to the body 3 to be vapor-deposited in the cylindrical body 4, and capable of being broken toward the inside of the opening part 5; vapor deposition thickness measurement means 7 vapor-depositing the substance 9 vaporized from the evaporation source 2 and measuring the vapor deposition thickness thereof; and a breaking-down controlling means 13 controlling the degree of the breaking-down of the breaking-down bodies 12 in accordance with the vapor deposition thickness measured by the vapor deposition thickness measurement means 7. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vacuum deposition apparatus in which an evaporation source is vaporized in a vacuum atmosphere and a vaporized substance is deposited on a deposition target.

  A vacuum deposition apparatus arranges an evaporation source and a deposition target in a vacuum chamber and heats the evaporation source in a state where the inside of the vacuum chamber is depressurized to melt and evaporate the evaporation source. The vaporized material is sublimated or vaporized, and the vaporized material is deposited on the surface of the vapor deposition target for vapor deposition. The vaporized material generated from the evaporation source when heated is discharged straight from the evaporation source in the normal direction, but the vaporization material goes straight because the discharge space is kept in a vacuum, and is placed facing the evaporation source. It adheres and deposits on the surface of the to-be-deposited body.

  However, since the vaporized material is released straightly from the evaporation source in the normal direction, there are many vaporized materials that do not travel toward the deposition target, and the vaporized material that does not travel toward the deposition target as described above. There is a problem that it does not adhere to the surface of the vapor deposition body, and the yield of the evaporation source is lowered and the vapor deposition rate on the surface of the vapor deposition body is slow.

  Therefore, a vacuum deposition apparatus that surrounds the space where the evaporation source disposed in the vacuum chamber and the deposition target face with a cylindrical body, and vaporizes the material evaporated from the evaporation source on the surface of the deposition target through the cylindrical body. Has been proposed (see, for example, Patent Document 1).

  FIG. 5 shows an example of this. A cylindrical body 4 that opens up and down is disposed in the vacuum chamber 1. The evaporation source 2 is disposed in the lower portion of the cylindrical body 4, and a heating element 21. The evaporation source 2 can be vaporized by heating. In addition, a heater 20 is wound around the cylindrical body 4 so that the cylindrical body 4 can be heated. The deposition target 3 is disposed above the opening at the upper end of the cylindrical body 4. A vacuum pump 22 evacuates the vacuum chamber 1 to create a vacuum atmosphere.

In this case, when the inside of the vacuum chamber 1 is evacuated and the evaporation source 2 is heated and vaporized by the heating element 21, the substance 9 evaporated from the evaporation source 2 flies through the cylindrical body 4 and passes through. The vapor deposition material 9 can be deposited by depositing the vaporized substance 9 on the deposition target body 3 through the opening at the upper end of the cylindrical body 4 and adhering to the surface of the deposition target body 3. And in this thing, since the space which the evaporation source 2 and the to-be-deposited body 3 oppose is surrounded by the cylindrical body 4, in the state which surrounded the vaporization substance 9 generated from the evaporation source 2 in the cylindrical body 4, The vaporized substance can be advanced toward the deposition target 3 while being reflected by the inner surface of the cylindrical body 4, and most of the vaporized substance 9 generated from the evaporation source 2 can reach the surface of the deposition target 3. It is possible to perform deposition with a high yield by reducing the amount of escape without adhering to the deposition target 3. Further, the cylindrical body 4 is heated by the heater 20, and even if the vaporized substance 9 adheres to the inner surface of the cylindrical body 4, it is reheated and revaporized, and this revaporized substance reaches the deposition target 3. Thus, a vapor deposition layer is formed, and the vaporized substance 9 is not deposited on the cylindrical body 4 to reduce the yield.
JP 2002-080961 A

  Here, the control of the vapor deposition rate on the deposition target 3 is performed by adjusting the heat generation temperature of the heating element 21, controlling the vaporization rate of the evaporation source 2, and controlling the movement amount of the vaporized substance 9 to the deposition target 3. It can be done by doing.

  However, if the space between the evaporation source 2 and the deposition target 3 is surrounded by the heated cylindrical body 4 as described above, the radiant heat from the cylindrical body 4 evaporates in addition to the temperature of the heating element 21. Since it acts on the source 2, the heating temperature of the evaporation source 2 cannot be adjusted quickly and accurately even if the heating temperature of the heating element 21 is controlled. Therefore, there is a problem in that it is difficult to control the deposition rate because the movement amount of the vaporized substance 9 from the evaporation source 2 to the deposition target 3 cannot be accurately controlled by controlling the heating temperature of the heating element 21. .

  The present invention has been made in view of the above points, and an object of the present invention is to provide a vacuum vapor deposition apparatus capable of accurately controlling the vapor deposition rate on the vapor deposition target.

  In the vacuum vapor deposition apparatus according to claim 1 of the present invention, the evaporation source 2 and the deposition target 3 are disposed in the vacuum chamber 1 and the substance of the evaporation source 2 is placed in the space between the evaporation source 2 and the deposition target 3. Surrounded by the cylindrical body 4 heated at the temperature to be vaporized, the vaporized substance 9 from the evaporation source 2 is vapor-deposited through the cylindrical body 4 with the evaporation source 2 and the vapor-deposited body 3 relatively moved. In the vacuum vapor deposition apparatus that reaches the surface of the body 3 for vapor deposition, the tube 4 is provided in the opening 5 facing the deposition target body 3 and can be folded toward the inside of the opening 5. The body 12, the deposition thickness measuring means 7 for depositing the vaporized substance 9 from the evaporation source 2 and measuring the deposition thickness, and the folding body 12 being folded according to the deposition thickness measured by the deposition thickness measuring means 7. And a folding control means 13 for controlling the degree of indentation. It is an.

  The opening area of the opening 5 can be adjusted according to the degree of folding inside the folding body 12 provided in the opening 5 of the cylindrical body 4, and passes through the opening 5 from the cylindrical body 4 to be covered. The amount of the vaporized substance 9 moving to the vapor deposition body 3 can be controlled, and the degree of folding of the folding body 12 is controlled according to the vapor deposition thickness measured by the vapor deposition thickness measuring means 7. By controlling by means 13 and controlling the amount of vaporized substance 9 passing through opening 5, the amount of vaporized substance 9 moving to vapor-deposited body 3 can be controlled according to the deposition thickness. .

  According to a second aspect of the present invention, in the first aspect, the substance vaporized from the evaporation source 2 is allowed to reach the surface of the deposition target 3 through the cylindrical body 4 after passing through the communication port 14. An opening / closing means 6 capable of adjusting the opening degree of the opening 14, and an opening / closing control means 8 for adjusting the opening degree of the communication port 14 by the opening / closing means 6 according to the deposition thickness measured by the deposition thickness measuring means 7. It is characterized by comprising.

  According to this invention, the vaporizing substance 9 is connected to the communication port by controlling the opening / closing means 6 for adjusting the opening degree of the communication port 14 according to the vapor deposition thickness measured by the vapor deposition thickness measuring unit 7. 14 can be controlled, and the amount of movement of the vaporized substance 9 to the deposition target 3 can be controlled more quickly according to the deposition thickness.

  According to a third aspect of the present invention, in the first or second aspect, the temperature adjusting means 10 for adjusting the temperature of the cylindrical body 4 and the temperature adjusting means according to the vapor deposition thickness measured by the vapor deposition thickness measuring means 7. And a temperature control means 11 for controlling the temperature of the cylindrical body 4 adjusted at 10.

  According to the present invention, the temperature of the cylindrical body 4 adjusted by the temperature adjusting means 10 is controlled by the temperature control means 11 in accordance with the vapor deposition thickness measured by the vapor deposition thickness measuring means 7. The vaporization rate can be controlled, and the vaporization rate of the evaporation source 2 can be accurately controlled to more accurately control the movement amount of the vaporized substance 9 to the deposition target 3.

  According to the present invention, the vaporizing substance 9 causes the opening 5 to be formed by controlling the degree of folding of the folded body 12 by the folding control means 13 according to the deposition thickness measured by the deposition thickness measuring means 7. The passing amount can be controlled, and the amount of the vaporized substance 9 moving to the deposition target 3 can be controlled according to the deposition thickness, and the deposition rate to the deposition target is accurately controlled. It is something that can be done.

  Hereinafter, the best mode for carrying out the present invention will be described.

  FIG. 1 shows an example of an embodiment of the present invention. The vacuum chamber 1 can be decompressed to a vacuum state by evacuating with a vacuum pump 22. A cylindrical body 4 is disposed in the vacuum chamber 1.

  The cylindrical body 4 is formed in a cylindrical shape having an upper surface opened, and the opening 5 on the upper surface is closed with a dispersion plate 29 provided with a large number of through holes 28. A heater 20 such as a sheathed heater is wound around the outer periphery of the cylindrical body 4. The cylindrical body 4 can be heated by supplying power from a power source 26 connected to the heater 20 to generate heat. It is. A heating container 31 such as a crucible is disposed in the lower end portion of the cylindrical body 4, and the evaporation source 2 is set in the heating container 31. Although any material can be used as the evaporation source 2, for example, an organic material such as an organic electroluminescence material can be used. A heating element 21 is attached to the heating container 31, and the heating source 36 such as a power source connected to the heating element 21 is controlled to cause the heating element 21 to generate heat, thereby heating the evaporation source 2 in the heating container 31. I can do it.

  A folded body 12 is provided in the opening 5 on the upper surface of the cylindrical body 4. The folding body 12 is provided along the entire circumference of the opening 5, and is formed, for example, by connecting a plurality of plates divided in the circumferential direction with a stretchable plate. The heater 20 is also provided in the folding body 12. The folded body 12 has its lower end rotatably attached to the upper end edge of the opening 5 by a pivotal support 38 such as a hinge, and rises above the wall surface of the tubular body 4 and the tubular body 4. It is made to rotate between the state which is folded inward of the opening part 5 and becomes parallel to the opening surface of the opening part 5. This rotation of the folding body 12 is performed by a rotation drive unit 39 including a link mechanism driven by a motor or the like. The rotation drive unit 39 is electrically connected to the folding control means 13 formed with a CPU, a memory, and the like, and the operation of the rotation control means 39 is controlled by a control signal output from the folding control means 13. And the angle of folding inward of the folding body 12 can be adjusted.

  A deposition target 3 such as a substrate on which vapor deposition is performed is arranged above the cylindrical body 4 so as to face the opening 5 at the upper end of the cylindrical body 4. The deposition target 3 is moved horizontally in a direction across the opening 5. As a means for moving the deposition target 3 in this manner, an arbitrary device such as a conveying device including a pulley and a belt can be used. Further, instead of moving the deposition target 3 as described above, the cylindrical body 4 may be moved, and the deposition target 3 and the cylindrical body 4 may be moved relative to each other. is there.

  Further, a deposition thickness measuring means 7 is provided in the vicinity of the deposition target 3. The vapor deposition thickness measuring means 7 may be disposed between or near the evaporation source 2 and the vapor deposition target 3, but in order to measure the vapor deposition film thickness on the vapor deposition target 3 more accurately, It is preferable to arrange in the vicinity of the body 3. The deposition thickness measuring means 7 is not particularly limited, but a film thickness meter that can automatically measure the film thickness deposited and deposited on the surface, such as a quartz crystal resonator thickness meter, can be used. The vapor deposition thickness measuring means 7 is electrically connected to the folding control means 13 so that the vapor deposition film thickness data measured by the vapor deposition thickness measuring means 7 is input to the folding control means 13. is there. The adjustment of the folding angle of the folding body 12 is controlled based on the vapor deposition film thickness data input to the folding control means 13.

  In performing vapor deposition with the vacuum vapor deposition apparatus formed as described above, first, the evaporation source 2 is filled and set in the heating container 31, and the vapor deposition target 3 is placed in the opening 5 at the upper end of the cylindrical body 4. Set horizontally upward. Next, the vacuum pump 22 is operated to reduce the pressure in the vacuum chamber 1 to a vacuum state, the heating element 21 is heated to heat the evaporation source 2, and the cylindrical body 4 is heated by the heater 25. The heating temperature of the cylindrical body 4 is set to a temperature at which the substance 9 evaporated from the evaporation source 2 evaporates and vaporizes again even if it adheres to the cylindrical body 4 and is not decomposed.

  When the inside of the vacuum chamber 1 is depressurized and the evaporation source 2 is heated by the heating element 21 as described above, the evaporation source 2 is vaporized by melting, evaporation, or sublimation, and the vaporized substance 9 generated from the evaporation source 2 is It goes straight inside the cylindrical body 4. A space between the evaporation source 2 through which the vaporized substance 9 travels and the deposition target 3 is surrounded by a cylindrical body 4, and the vaporized substance 9 is confined in the cylindrical body 4, and therefore, as shown in FIG. Thus, the vaporized substance 9 is reflected by the inner surface of the cylindrical body 4 and proceeds toward the opening 5 at the upper end. At this time, since the opening at the upper end of the cylindrical body 4 is closed by the dispersion plate 29 provided with a large number of through holes 28, the vaporized substance 9 in the cylindrical body 4 passes through the through holes 28 of the dispersion plate 29. After that, it comes out of the opening 5 at the upper end of the cylindrical body 4, reaches the surface of the deposition target 3, and the vaporized substance 9 can be deposited on the surface of the deposition target 3 for vapor deposition. Thus, since the vaporized substance 9 passes through the plurality of through holes 28 of the dispersion plate 29 and proceeds to the vapor deposition target 3, the vaporized substance 9 can reach the vapor deposition target 3 with a uniform distribution. It can vapor-deposit on the to-be-deposited body 3 with a sufficient film thickness.

  Further, the substance 9 vaporized from the evaporation source 2 as described above is regulated in the cylindrical body 4, and the vaporized substance 9 can be prevented from scattering in all directions and is generated from the evaporation source 2. Most of the vaporized substance 9 to be reached can reach the surface of the deposition target 3 and be attached thereto. Therefore, most of the vaporized substance 9 generated from the evaporation source 2 adheres to the surface of the deposition target 3 and contributes to the film formation, thereby reducing the ineffective material, increasing the material utilization efficiency of the evaporation source 2 and increasing the yield. Can be deposited at a high rate, and the film forming speed on the surface of the deposition target 3 can be increased. Moreover, since the cylindrical body 4 is heated and becomes a hot wall, even if the vaporized substance 9 adheres to the surface of the cylindrical body 4, the deposit is reheated and vaporized by the cylindrical body 4, The vaporized substance 9 thus re-vaporized is deposited on the surface of the deposition target 3 in the same manner as described above. The folded body 12 is also heated by the heater 20, and the dispersion plate 29 attached in contact with the inner periphery of the cylindrical body 4 is heated by heat transfer or radiant heat from the cylindrical body 4. Even if the vaporized substance 9 adheres to the folded body 12 or the dispersion plate 29, it vaporizes again by evaporation or the like, and is deposited on the surface of the deposition target 3. Therefore, it is possible to prevent the vaporized substance 9 from being deposited on the cylindrical body 4, the folded body 12, and the dispersion plate 29 and not being used for vapor deposition, and the yield of vapor deposition is not reduced.

  Here, the vaporized substance 9 reaches the surface of the deposition target 3 and deposits, and at the same time reaches the deposition thickness measuring means 7 and deposits, and has a correlation with the film thickness deposited on the deposition target 3. The vapor deposition is performed on the vapor deposition thickness measuring means 7 by the thickness. Therefore, by measuring the vapor deposition film thickness with the vapor deposition thickness measuring means 7, it is possible to detect the film thickness deposited on the deposition target 3, and with the vapor deposition thickness measuring means 7, the vapor deposition film thickness per unit time, that is, By measuring the deposition rate, the deposition rate on the deposition target 3 can be detected.

  The substance 9 evaporated from the evaporation source 2 in the cylindrical body 4 moves to the deposition target 3 after passing through the opening 5 and is deposited on the deposition target 3. The opening area of the opening 5 can be adjusted by the folding angle of the folding body 12. When the folding angle of the folding body 12 is large, the opening area of the opening 5 is small. When the folding angle of the folding body 12 is small, the opening area of the opening 5 is large. Become. As described above, the opening area of the opening 5 can be adjusted according to the degree of inward folding of the folded body 12, and the vaporized substance that passes through the opening 5 and moves to the deposition target 3. The amount of 9 can be adjusted. That is, since the vaporized substance 9 is a gas, if the opening area of the opening 5 is reduced, the amount of the vaporized substance 9 that moves through the opening 5 decreases, and conversely, if the opening area of the opening 5 is increased. The amount of the vaporized substance 9 that moves through the opening 5 increases. Further, when the opening area of the opening 5 is reduced, the amount of vaporization from the evaporation source 2 is reduced and the amount of the vaporized substance 9 passing through the opening 5 is reduced. When the opening area of the opening 5 is increased, the evaporation source 2 The amount of vaporized substance 9 increases and the amount of the vaporized substance 9 passing through the opening 5 also increases.

  Therefore, in the present invention, the vapor deposition thickness measuring means 7 measures the vapor deposition thickness and vapor deposition rate, and the folding control means 13 controls the degree of folding of the folded body 12 based on the measured data, thereby the cylindrical body 4. By adjusting the opening area of the opening 5, the amount of the vaporized substance 9 that passes through the opening 5 and moves to the deposition target 3 can be controlled, and the deposition thickness and deposition on the deposition target 3 can be controlled. The speed can be controlled.

  The control of the deposition thickness and the deposition rate will be specifically described. First, the degree of vacuum in the vacuum chamber 1, the heating temperature of the cylindrical body 4 by the heater 20, and the heating temperature of the evaporation source 2 by the heating element 21 are set to the same conditions as in actual vapor deposition, and the folded body A preliminary test is performed to obtain correlation data between the opening area of the opening 5 of the cylindrical body 4 adjusted by the folding angle of 12 and the deposition rate measured by the deposition thickness measuring means 7. Further, since the amount of vaporization decreases as the amount of substance in the evaporation source 2 decreases due to vaporization, the correlation data is corrected in accordance with the time change of the deposition rate measured by the deposition thickness measuring means 7. Thus obtained correlation data between the opening area of the opening 5 of the cylindrical body 4 and the deposition rate is stored in the memory of the folding control means 13.

  When actually depositing the deposition target 3, the folding control means 13 is adjusted so that the opening area of the opening 5 of the cylindrical body 4 corresponds to the target value of the deposition rate on the deposition target 3. The vapor deposition is performed by controlling the folding angle of the folding body 12. Further, during the vapor deposition, when the vapor deposition rate measured by the vapor deposition thickness measuring means 7 becomes larger than the target value, the folding control means 13 controls the folding body 12 so that the folding angle becomes large. Thus, when the opening area of the opening 5 is reduced and the vapor deposition rate measured by the vapor deposition thickness measuring means 7 is smaller than the target value, the folding control means 13 reduces the folding angle of the folding body 12. The opening area of the opening 5 is controlled to increase the opening area of the opening 5 in this manner, and the opening area of the opening 5 is feedback-controlled in this way so that the target deposition rate is maintained. At this time, if the folding angle of the folding body 12 is increased so that the opening area of the opening 5 of the cylindrical body 4 is reduced, the opening 5 faces only a part of the deposition target 3. In some cases, the vaporized substance 9 passing through the opening 5 may be deposited on a part of the body 3 to be deposited. For this reason, the vapor-deposited body 3 is moved in a direction crossing the opening 5 so that the vapor-deposited body 3 and the cylindrical body 4 are moved relatively, and the vapor-deposited body 3 crosses the upper portion of the opening 5. At this time, vapor deposition is uniformly performed on the entire surface of the deposition target 3.

  As described above, the folding angle of the folding body 12 is controlled by the folding control means 13 while the deposition thickness measuring means 7 measures the deposition thickness and deposition rate, and the opening of the opening 5 of the cylindrical body 4 is controlled. By adjusting the area, it is possible to control the amount of the vaporized substance 9 that passes through the opening 5 and moves to the deposition target 3 according to the deposition thickness and deposition rate. Vapor deposition can be performed while controlling the amount of vaporized substance 9 transferred to the vapor deposition body 3 and accurately controlling the vapor deposition thickness and vapor deposition rate.

  FIG. 2 shows another embodiment of the present invention, in which an evaporation source accommodating chamber 24 forming a part of the cylindrical body 4 is provided on the bottom surface of the cylindrical body 4. The evaporation source accommodating chamber 24 is formed in a closed bottomed cylindrical shape except that it communicates with the inside of the cylindrical body 4 through the communication port 14 at the upper end. The heater 20 is also provided in the evaporation source accommodation chamber 24. The heating container 31 for setting the evaporation source 2 is disposed in the lower end portion of the evaporation source storage chamber 24, and the opening / closing means 6 is provided at the communication port 14 above the evaporation source 2. The opening / closing means 6 is formed by an electric valve, an electric shutter, or the like, so that the opening degree of the communication port 14 can be adjusted. The opening / closing means 6 is electrically connected to an opening / closing control means 8 formed with a CPU, a memory and the like so that the opening degree of the opening / closing means 6 is controlled by a control signal output from the opening / closing control means 8. It has become. The vapor deposition film thickness data measured by the vapor deposition thickness measuring means 7 is inputted to the opening / closing control means 8, and the opening / closing means 6 is based on the vapor deposition film thickness data inputted to the opening / closing control means 8. The degree of opening of the communication port 14 is controlled. In the embodiment of FIG. 2, the opening / closing control means 8 is formed so as to be used also as the folding control means 13. Other configurations are the same as those in FIG.

  In this material, the substance 9 evaporated from the evaporation source 2 in the evaporation source storage chamber 24 moves through the cylindrical body 4 after passing through the communication port 14, and further passes through the opening 5 to be deposited. Deposited on the body 3. The amount of the vaporized substance 9 passing through the communication port 14 can be adjusted by adjusting the opening degree of the communication port 14 with the opening / closing means 6. That is, since the vaporized substance 9 is a gas, if the opening degree of the communication port 14 is reduced, the amount of the vaporized substance 9 that passes through the communication port 14 and moves to the deposition target 3 decreases, and conversely the communication port 14. When the opening degree of the is increased, the amount of the vaporized substance 9 that passes through the communication port 14 and moves to the deposition target 3 increases. Further, when the opening degree of the communication port 14 is reduced, the amount of vaporization from the evaporation source 2 is reduced and the amount of the vaporized substance 9 passing through the communication port 14 is also reduced. When the opening degree of the communication port 14 is increased, the evaporation source 2 The amount of vaporized substance 9 increases and the amount of vaporized substance 9 passing through the communication port 14 also increases.

  Therefore, the deposition thickness measuring means 7 measures the deposition thickness and the deposition rate, and the opening / closing means 6 is controlled by the opening / closing control means 8 to adjust the opening degree of the communication port 14 of the evaporation source accommodation chamber 24 based on the measurement data. By doing so, the amount of the vaporized substance 9 that passes through the communication port 14 and moves to the deposition target 3 can be controlled, and the deposition thickness and deposition rate on the deposition target 3 can be controlled. is there.

  The control of the deposition thickness and the deposition rate will be specifically described. First, the degree of vacuum in the vacuum chamber 1, the heating temperature of the cylindrical body 4, the heating temperature of the evaporation source 2, and the opening area of the opening portion by the folding body 12 are set to the same conditions as when performing actual vapor deposition. Then, a preliminary test is performed to obtain correlation data between the degree of opening of the communication port 14 adjusted by the opening / closing means 6 and the deposition rate measured by the deposition thickness measuring means 7. Further, since the amount of vaporization decreases as the amount of substance in the evaporation source 2 decreases due to vaporization, the correlation data is corrected in accordance with the time change of the deposition rate measured by the deposition thickness measuring means 7. Thus obtained correlation data between the degree of opening of the communication port 14 and the vapor deposition rate is stored in the memory of the open / close control means 8.

  When actually depositing on the deposition target 3, the opening / closing control unit 8 controls the opening / closing unit 6 so that the degree of opening of the communication port 14 corresponding to the target value of the deposition rate on the deposition target 3 is obtained. Then, vapor deposition is performed. Further, during the vapor deposition, when the vapor deposition rate measured by the vapor deposition thickness measuring means 7 becomes larger than the target value, the open / close control means 8 controls the open / close means 6 to reduce the opening degree of the communication port 14. When the vapor deposition rate measured by the vapor deposition thickness measuring means 7 becomes smaller than the target value, the open / close control means 8 controls the open / close means 6 to increase the opening degree of the communication port 14. The opening degree is feedback-controlled so that the target deposition rate is maintained.

  By controlling the degree of opening of the communication port 14 of the evaporation source storage chamber 24 together with the control of the opening area of the opening 5 of the cylindrical body 4 described above, the evaporation source 2 to the deposition target 3 can be controlled. The movement amount of the vaporized substance 9 can be controlled more accurately, and vapor deposition can be performed while accurately controlling the vapor deposition thickness and vapor deposition rate.

  FIG. 3 shows another embodiment of the present invention. A temperature adjusting means 10 is provided on the outer periphery of the cylindrical body 4 instead of the heater 20 described above. The temperature adjusting means 10 includes a heating element 10a formed by a sheathed heater or the like, and a cooling body 10b formed by a cooling pipe or the like through which a refrigerant is passed, and the heating element 10a and the cooling element 10b are connected to the cylinder. The temperature adjusting means 10 is provided on the cylindrical body 4 by alternately spirally winding the outer periphery of the cylindrical body 4. The heating element 10a can adjust the heat generation temperature by controlling the heat source 34 formed by a power source or the like, and the cooling body 10b controls the cooling source 35 formed by a refrigerant cooling / feeding device or the like. By doing so, the cooling temperature can be adjusted. In the embodiment of FIG. 3, an evaporation source accommodation chamber 24 similar to that of FIG. 2 is provided, and the evaporation source 2 is disposed in the evaporation source accommodation chamber 24, and a part of the cylindrical body 4 is disposed. The temperature adjusting means 10 is also provided on the outer periphery of the evaporation source accommodating chamber 24. The temperature adjusting means 10 is also provided on the folding body 12. In the embodiment of FIG. 3, the opening / closing means 6 of FIG. 2 is not provided. Other configurations are the same as those in FIGS. 1 and 2.

  The heating source 34 and the cooling source 35 of the temperature adjusting means 10 and the heating source 36 of the heating element 21 are each electrically connected to a temperature control means 11 formed with a CPU, a memory and the like. In accordance with a control signal output from the control means 11, the heat source 34 and the cooling source 35 are controlled to control the heat generation temperature of the heat generating body 10a and the cooling temperature of the cooling body 10b, thereby adjusting the temperature composed of the heat generating body 10a and the cooling body 10b. The temperature of the cylindrical body 4 can be adjusted by the means 10. Further, the heating signal is controlled by the control signal output from the temperature control means 11 to control the heating temperature of the heating element 21 and the heating temperature of the evaporation source 2 by the heating element 21 can be adjusted. Yes. The vapor deposition film thickness data measured by the vapor deposition thickness measuring means 7 is inputted to the temperature control means 11, and the temperature adjustment is performed based on the vapor deposition film thickness data inputted to the temperature control means 11. The temperature adjustment of the cylindrical body 4 by means 10 and the adjustment of the heating temperature of the evaporation source 2 by the heating element 21 are controlled. In the embodiment of FIG. 3, the temperature control means 11 is formed so as to be used also as the folding control means 13 described above.

  In the vacuum deposition apparatus formed as described above, the heating element 21 is heated to heat the evaporation source 2, and the heating element 10a of the temperature adjusting means 10 is heated to heat the cylindrical body 4, Vapor deposition can be performed in the same manner as described above. Then, the vapor deposition thickness and the vapor deposition rate are measured by the vapor deposition thickness measuring unit 7 as described above, and the temperature control unit 11 controls the heating temperature of the evaporation source 2 by the heating element 21 according to the vapor deposition thickness and vapor deposition rate thus measured. Thus, the vaporization rate can be controlled by adjusting the vaporization rate from the evaporation source 2 and adjusting the amount of the vaporized substance 9 transferred from the evaporation source 2 to the deposition target 3. However, when the radiant heat from the cylindrical body 4 acts on the vaporized substance 9, the movement speed of the vaporized substance 9 in the cylindrical body 4 is unlikely to change, and the change in the amount of movement of the vaporized substance 9 to the deposition target body 3 occurs. Was very small. Therefore, in the present embodiment, the amount of the vaporized substance 9 present in the cylindrical body 4 is controlled by adjusting the temperature of the cylindrical body 4.

  That is, the temperature of the cylindrical body 4 is controlled by controlling the heating by the heating element 10a of the temperature adjusting means 10 and the cooling by the cooling body 10b. The temperature can be adjusted over a wide temperature range from a low temperature at which the second substance does not vaporize. Although the cylindrical body 4 has a large heat capacity, the temperature adjustment can be performed quickly by providing the heating element 10a and the cooling body 10b in this way. And when the vapor deposition rate measured by the vapor deposition thickness measuring means 7 is larger than the target value, the temperature control means 11 is controlled by the temperature control means 11 so as to give priority to the cooling by the cooling body 10b, for example. Control is performed such that the temperature of the vapor deposition source 2 is lowered below the temperature at which the material of the vapor deposition source 2 is not vaporized to deposit the material of the vapor deposition source 2 on the inner surface of the cylindrical body 4 and the movement amount of the vaporized material 9 to the vapor deposition target 3 is reduced. To do. If the temperature of the cylindrical body 4 is lowered below the temperature at which the substance of the evaporation source 2 is not vaporized, the vaporized substance 9 is deposited as a solid or liquid on the inner periphery of the cylindrical body 4. Since the vaporization is performed again by raising the temperature, the deposition yield does not decrease.

  In addition to controlling the movement amount of the vaporized substance 9 to the deposition target 3 in this way, the control can be performed as follows. First, when the vapor deposition rate measured by the vapor deposition thickness measuring means 7 is smaller than the target value, for example, the temperature control means 11 controls the temperature adjusting means 10 so as to give priority to heating by the heating element 10a. The temperature of 4 is raised so that high-temperature radiant heat acts on the evaporation source 2, and the temperature of the evaporation source 2 is controlled to rise in a short time. When the vapor deposition rate measured by the vapor deposition thickness measuring means 7 is larger than the target value, for example, the temperature control means 11 is controlled by the temperature control means 11 so as to give priority to the cooling by the cooling body 10b, so that the cylindrical body 4 Is controlled so that the radiant heat does not act on the evaporation source 2 and the temperature of the evaporation source 2 is decreased in a short time.

  In this way, by adjusting the temperature of the cylindrical body 4 with the temperature adjusting means 10 and controlling the influence of the radiant heat acting on the evaporation source 2, the heating temperature of the evaporation source 2 can be controlled quickly and accurately. By using this control together with the control of the opening area of the opening 5 of the cylindrical body 4, it is possible to control the amount of the vaporized substance 9 transferred from the evaporation source 2 to the deposition target 3. It becomes accurate, and vapor deposition can be performed while accurately controlling the vapor deposition thickness and vapor deposition rate.

  FIG. 4 shows an example of another embodiment of the present invention. In the embodiment of FIG. 3, the opening / closing means 6 of the embodiment of FIG. is there. Other configurations are the same as those in FIGS. 1 to 3, and the opening / closing control means 8 and the temperature control means 11 are also used as the folding control means 13.

  In this case, as described in the embodiment of FIG. 1, the degree of folding of the folding body 12 by the folding control unit 13 based on the deposition rate data measured by the deposition thickness measuring unit 7. By controlling the opening area of the opening 5 of the cylindrical body 4, the amount of the vaporized substance 9 that passes through the opening 5 and moves to the deposition target 3 can be controlled. The vapor deposition thickness and vapor deposition rate on the body 3 can be controlled. In addition, as described in the embodiment of FIG. 2, the open / close control means 8 controls the open / close means 6 based on the vapor deposition rate measurement data measured by the vapor deposition thickness measuring means 7 to communicate the evaporation source accommodation chamber 24. By adjusting the opening degree of the port 14, the amount of the vaporized substance 9 that passes through the communication port 14 and moves to the deposition target 3 can be controlled, and the deposition thickness and deposition rate on the deposition target 3 can be controlled. Can be controlled. Further, as described in the embodiment of FIG. 3, based on the deposition rate data measured by the deposition thickness measuring unit 7, the temperature control unit 11 controls the temperature adjustment of the cylindrical body 4 by the temperature adjusting unit 10. Thereby, the control of the amount of movement of the vaporized substance 9 from the evaporation source 2 to the deposition target 3 becomes more accurate. Therefore, by using these controls in combination, the movement amount of the vaporized substance 9 from the evaporation source 2 to the vapor deposition target 3 becomes more accurate, and vapor deposition is performed while accurately controlling the vapor deposition thickness and vapor deposition rate. It is something that can be done.

It is a schematic sectional drawing which shows an example of embodiment of this invention. It is a schematic sectional drawing which shows another example of embodiment of this invention. It is a schematic sectional drawing which shows another example of embodiment of this invention. It is a schematic sectional drawing which shows another example of embodiment of this invention. It is a schematic sectional drawing which shows a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Evaporation source 3 Deposited body 4 Cylindrical body 5 Opening part 6 Opening / closing means 7 Deposition thickness measurement means 8 Opening / closing control means 9 Vaporized substance 10 Temperature adjusting means 11 Temperature control means 12 Folding body 13 Folding control means 14 Communication port

Claims (3)

  The evaporation source and the deposition target are arranged in the vacuum chamber, and the space between the evaporation source and the deposition target is surrounded by a cylindrical body heated at a temperature at which the substance of the evaporation source is vaporized. In a vacuum deposition apparatus in which a substance evaporated from an evaporation source reaches the surface of the deposition target through the cylindrical body and is deposited while the body is relatively moved, facing the deposition target of the cylindrical body A foldable body provided in the opening and capable of folding toward the inside of the opening, a deposition thickness measuring means for depositing a vaporized substance from the evaporation source and measuring the deposition thickness, and a deposition thickness measuring means. And a folding control means for controlling the degree of folding of the folded body in accordance with the measured deposition thickness.   The vaporized material from the evaporation source is allowed to reach the surface of the deposition target through the cylindrical body after passing through the communication port, and the opening / closing means capable of adjusting the opening degree of the communication port and the above-described vapor deposition thickness measuring unit. The vacuum deposition apparatus according to claim 1, further comprising an opening / closing control means for adjusting an opening degree of the communication port by the opening / closing means in accordance with the measured deposition thickness.   Temperature adjusting means for adjusting the temperature of the cylindrical body, and temperature control means for controlling the temperature of the cylindrical body adjusted by the temperature adjusting means according to the vapor deposition thickness measured by the vapor deposition thickness measuring means. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein

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