JP2008147568A5 - - Google Patents

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Publication number
JP2008147568A5
JP2008147568A5 JP2006335889A JP2006335889A JP2008147568A5 JP 2008147568 A5 JP2008147568 A5 JP 2008147568A5 JP 2006335889 A JP2006335889 A JP 2006335889A JP 2006335889 A JP2006335889 A JP 2006335889A JP 2008147568 A5 JP2008147568 A5 JP 2008147568A5
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JP
Japan
Prior art keywords
image sensor
refractive index
value
photoelectric conversion
pixel
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Pending
Application number
JP2006335889A
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Japanese (ja)
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JP2008147568A (en
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Priority to JP2006335889A priority Critical patent/JP2008147568A/en
Priority claimed from JP2006335889A external-priority patent/JP2008147568A/en
Publication of JP2008147568A publication Critical patent/JP2008147568A/en
Publication of JP2008147568A5 publication Critical patent/JP2008147568A5/ja
Pending legal-status Critical Current

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Claims (8)

光の入射する側が、屈折率が低い材質から始まり、深さ方向に向かって段階的に屈折率が高くなる材質からなる、少なくとも可視光に対して透明な屈折層を配置し、該屈折層の表面に、反射防止コートを配置した、こと特徴とするイメージセンサ。 A light incident side is made of a material having a refractive index starting from a material having a low refractive index and gradually increasing in the depth direction, and at least a refractive layer transparent to visible light is disposed . An image sensor characterized in that an antireflection coating is disposed on the surface . 前記屈折層は、屈折率が不連続的に高くなる、ことを特徴とする請求項１に記載のイメージセンサ。 The image sensor according to claim 1, wherein the refractive layer has a refractive index that increases discontinuously . 前記屈折層は、各画素の光電変換素子のある箇所が局所的に屈折率が高くなる、ことを特徴とする請求項１又は２に記載のイメージセンサ。 3. The image sensor according to claim 1, wherein the refractive layer has a refractive index that locally increases at a portion where the photoelectric conversion element of each pixel is located . 4. 前記屈折層の直下で、且つ光電変換素子の直上に位置する層において、各画素の光電変換素子の中心を通る軸のまわりに、該軸の中心に向かって屈折率が高くなるＧＩ導波路が画素毎に配置される、ことを特徴とする請求項１〜３のいずれか一項に記載のイメージセンサ。 In a layer located immediately below the refractive layer and directly above the photoelectric conversion element, a GI waveguide whose refractive index increases toward the center of the axis around the axis passing through the center of the photoelectric conversion element of each pixel. The image sensor according to any one of claims 1 to 3, wherein the image sensor is arranged for each pixel . 前記ＧＩ導波路は、光束の入射側は高屈折率の領域の径が大きく、光電変換素子に近づくに従い高屈折率の領域の径が徐々に狭くなる、ことを特徴とする請求項４に記載のイメージセンサ。 The GI waveguide, the incident side of the light beam diameter larger region of high refractive index, diameter of the high refractive index region becomes gradually narrower in approaching the photoelectric conversion element, claim 4, wherein Image sensor. 前記ＧＩ導波路に代えてフォトニックバンドギャップを設けた、ことを特徴とする請求項４又は５に記載のイメージセンサ。 The image sensor according to claim 4, wherein a photonic band gap is provided in place of the GI waveguide . 請求項１〜６のいずれか一項に記載のイメージセンサを備えることを特徴とする撮像装置。An image pickup apparatus comprising the image sensor according to claim 1. 前記イメージセンサ上のレンズ光軸上に略対応する少なくともひとつの画素に対する結合効率が最も高い範囲の値を示す入射光束の最も明るいＦ値を、該イメージセンサのＦ値として定義し、前記イメージセンサに組み合わせて使用する結像レンズの最も明るいＦ値が、該イメージセンサのＦ値に対して０．５段以上の差をもたない、ことを特徴とする請求項７に記載の撮像装置。The brightest F value of an incident light beam showing a value in a range in which the coupling efficiency with respect to at least one pixel substantially corresponding to the lens optical axis on the image sensor corresponds to the highest is defined as the F value of the image sensor, The imaging apparatus according to claim 7, wherein the brightest F value of the imaging lens used in combination with the image sensor does not have a difference of 0.5 steps or more with respect to the F value of the image sensor.
JP2006335889A 2006-12-13 2006-12-13 Image sensor and imaging device Pending JP2008147568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006335889A JP2008147568A (en) 2006-12-13 2006-12-13 Image sensor and imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006335889A JP2008147568A (en) 2006-12-13 2006-12-13 Image sensor and imaging device

Publications (2)

Publication Number Publication Date
JP2008147568A JP2008147568A (en) 2008-06-26
JP2008147568A5 true JP2008147568A5 (en) 2010-02-04

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JP2006335889A Pending JP2008147568A (en) 2006-12-13 2006-12-13 Image sensor and imaging device

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010268099A (en) * 2009-05-13 2010-11-25 Honda Motor Co Ltd Imaging apparatus for vehicle,and vehicle periphery monitoring apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62156860A (en) * 1985-12-28 1987-07-11 Toshiba Corp Solid-state image pickup device
JPH04252074A (en) * 1991-01-28 1992-09-08 Nec Corp Solid-state image sensing element
JP3200856B2 (en) * 1991-02-12 2001-08-20 ソニー株式会社 Solid-state imaging device
JPH0595098A (en) * 1991-10-02 1993-04-16 Olympus Optical Co Ltd Solid state imaging device
JPH05344279A (en) * 1992-06-10 1993-12-24 Fujitsu Ltd Solid-state image pickup device and its manufacture
JP3467434B2 (en) * 1999-07-28 2003-11-17 Ｎｅｃエレクトロニクス株式会社 Solid-state imaging device and method of manufacturing the same
JP2003133536A (en) * 2001-10-24 2003-05-09 Fuji Film Microdevices Co Ltd Solid-stage imaging device
JP2005026567A (en) * 2003-07-04 2005-01-27 Matsushita Electric Ind Co Ltd Solid state imaging device and method for manufacturing the same
JP2005203526A (en) * 2004-01-15 2005-07-28 Sony Corp Solid state imaging device and its fabrication process
JP4498884B2 (en) * 2004-10-20 2010-07-07 日立マクセル株式会社 Optical waveguide, optical waveguide manufacturing method, and liquid crystal display device using the optical waveguide
JP2006332347A (en) * 2005-05-26 2006-12-07 Sharp Corp Inlay lens, solid-state image sensing element, electronic information device, formation method of inlay lens and manufacturing method of solid-state image sensing element
JP5092251B2 (en) * 2006-02-22 2012-12-05 住友電気工業株式会社 Photodetector

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