JP2008141050A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor device in which burying capability of an Al film is improved. <P>SOLUTION: A control section coats the surface of a silicon substrate having a via hole VH with a metal film BM1 (Ti film) and a metal nitride film BM2 (TiN film), and uses a CVD method to form an Al-CVD film P1 in the inside of the via hole VH coated with the metal nitride film BM2. The control section coats the metal nitride film BM2 under film-depositing conditions corresponding to film-depositing condition data, so that the film thickness of the metal nitride film BM2 positioned on the bottom of the via hole VH is thinner than a reference film thickness and the thickness of the metal nitride film BM2 positioned on the top of the via hole VH is thicker than the reference film thickness. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus.

  In the multilayer wiring technology of a semiconductor device, in order to form a plug connecting conductors, a filling technology is used in which a hole provided in an interlayer insulating film is filled with a metal material. Aluminum (Al) embedding technology is indispensable for realizing a plug having low electrical resistivity and high reliability.

As an Al embedding technique, a reflow sputtering method which is one of PVD (Physical Vapor Deposition) methods is known. In the reflow sputtering method, Al is sputtered onto a substrate having holes, and then the Al deposited thereon is fluidized by raising the temperature of the substrate. This flowing Al is responsible for improving the embedding property.

  However, when the design rule is reduced with the progress of high speed and high integration of the semiconductor device, the aspect ratio of the hole is increased and it becomes difficult to completely fill the inside of the hole by the PVD method. For example, in the case of a design rule in which the inner diameter of the hole is 0.18 μm or less, or the aspect ratio is 3 or more, in the PVD method, a void (hereinafter simply referred to as a void) is generated inside the plug. End up.

Therefore, in the Al embedding technique, conventionally, a CVD (Chemical Vapor Deposition) method has been proposed in order to improve the embedding property. In Patent Document 1, a nucleation liner film such as a Ti film, a TiN film, or a Ti / TiN film is formed on the inner wall of a hole, and an Al-CVD film and an Al-PVD film are formed on the nucleation liner film. Laminate. The nucleation liner film provides a surface on which an Al-CVD film can be grown. Thereby, the hole filling property and the reliability of the semiconductor device are improved.
JP 2002-280387A

In the Al-CVD film, a precursor (for example, MPA (Methylpyrrolidine Alane)) adheres to the surface of the base, and grows by electron transfer, that is, surface reaction with the surface.
On the other hand, the TiN film has poor adhesion to the Al-CVD film (or precursor) and cannot be expected to exchange electrons with the precursor. Therefore, when the outermost surface of the substrate is covered with a TiN film, the Al-CVD film is difficult to grow on the outermost surface of the substrate, and even if it grows, it grows very unevenly and the inside of the hole To form voids.

In addition, a high resistance Ti—Al alloy is formed between the Ti film and the Al—CVD film (or precursor). Therefore, when the inner wall of the hole is a Ti film, the Al-CVD film grows in a region where the precursor adhesion probability is high, that is, a region close to the hole opening, and the hole opening is filled before filling the hole. It will be blocked. The Ti film has Ti-
Since the Al alloy is formed, the wiring resistance is increased even when the design rule is wide.

As a result, while Patent Document 1 uses the CVD method, the base film suitable for the CVD method has not been sufficiently studied, and it has been difficult to improve the embedding characteristics.
The present invention has been made to solve the above problems, and provides a method for manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device, in which the embeddability of an Al film is improved.

  The inventors have found that the growth rate of the Al-CVD film greatly depends on the thickness of the underlying metal nitride film (for example, a TiN film) while examining the filling performance of the Al-CVD film. . That is, the present inventors reflect the information of the underlying layer, that is, the characteristics of the metal film, when the metal nitride film is thinner than a predetermined film thickness (hereinafter simply referred to as a reference film thickness). The inventors have found that the growth of an Al-CVD film is started on the metal nitride film. In addition, when the thickness of the metal nitride film is larger than the reference thickness, the present inventors make it impossible for the metal nitride film to grow an Al-CVD film on the metal nitride film regardless of the underlying information. I found.

  In order to achieve the above object, according to the first aspect of the present invention, a step of coating a metal film on the surface of a substrate having a recess, a step of coating a metal nitride film on the surface of the metal film, and the metal nitriding Forming a first aluminum film inside the recess covered with the film using a CVD method, wherein the first aluminum film is grown on the metal nitride film. When the thickness of the metal nitride film is a reference film thickness, when the metal nitride film is coated on the metal film, the thickness of the metal nitride film located at the bottom of the recess is more than the reference film thickness. And forming the film thickness of the metal nitride film located above the concave portion to be thicker than the reference film thickness.

  According to this configuration, the first aluminum film grows at the bottom of the recess, and the growth of the first aluminum film is suppressed at the top of the recess. Therefore, the bottom up of the first aluminum film can be achieved, and the embedding property of the first aluminum film can be improved.

  According to a second aspect of the present invention, in the semiconductor device manufacturing method according to the first aspect, the metal nitride film is coated by a long throw sputtering method, and the metal nitride film located at the edge of the bottom is formed. The gist is to make the film thickness thinner than the reference film thickness.

  According to this configuration, the metal nitride film located at the bottom is made thin at the edge of the bottom by the shadowing effect. That is, the metal nitride film located at the bottom has a thickness smaller than the reference film thickness at the edge of the bottom, and the first aluminum film is grown from the edge of the bottom. Therefore, the first aluminum film can always be grown from the edge of the bottom, and variations in the growing position and shape can be suppressed. As a result, the concave portion can be embedded under high reproducibility.

  According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the first or second aspect, wherein the metal nitride film is coated by a reactive sputtering method, and the metal nitride film located on the upper portion is formed. The gist is to make the nitrogen composition ratio of the metal nitride film located at the bottom relatively lower than the nitrogen composition ratio.

  According to this configuration, the metal nitride film located at the bottom promotes the growth of the first aluminum film with a relatively low nitrogen composition ratio, that is, a relatively high metal composition ratio. Further, the metal nitride film located on the upper part suppresses the growth of the first aluminum film due to the relatively high nitrogen composition ratio. As a result, the embedding property of the first aluminum film can be further improved.

The invention according to claim 4 is the manufacturing method of the semiconductor device according to any one of claims 1 to 3, wherein the first aluminum film is annealed.
According to this configuration, the adhesion between the first aluminum film and the metal nitride film can be improved. Therefore, the state of the first aluminum film can be stabilized, and the embedding property of the first aluminum film can be improved more reliably.

  The invention according to claim 5 is the method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the second aluminum film is further formed on the first aluminum film by using a PVD method. The gist is to laminate.

  According to this configuration, the aluminum film is formed by the first aluminum film by the CVD method excellent in embeddability and the second aluminum film by the PVD method excellent in processing capability. Therefore, the throughput can be improved as compared with the case where all the first aluminum films are formed using the CVD method.

  The invention according to claim 6 is the method of manufacturing a semiconductor device according to any one of claims 1 to 5, wherein the metal film is made of any one of titanium, tantalum, nickel, and cobalt. In addition, the gist of the metal nitride film is any one of titanium nitride, tantalum nitride, nickel nitride, and cobalt nitride.

  The invention according to claim 7 is the method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the metal film is mainly composed of titanium, and the metal nitride film is The gist is that the main component is titanium nitride, and the reference film thickness is 5 to 10 nm.

  In order to achieve the above object, according to the invention described in claim 8, a first film forming unit that coats a metal film on the surface of the substrate and coats the metal film with a metal nitride film; A second film forming unit for forming a first aluminum film, a transport unit for transporting the substrate to the first film forming unit and the second film forming unit, and driving the transport unit and the first film forming unit. The substrate having a recess on the surface is transported to the first film forming unit, the metal film and the metal nitride film are coated on the substrate, and the transport unit and the second film forming unit are driven, A control unit that transports the substrate having the metal nitride film to a second film forming unit to form the first aluminum film in the recess covered with the metal nitride film, and the control unit Is the thickness of the metal nitride film when the first aluminum film is grown on the metal nitride film When the reference film thickness is set, the first film forming portion is driven to make the metal nitride film located at the bottom of the recess thinner than the reference thickness, and at the top of the recess The gist is to make the metal nitride film thicker than the reference film thickness.

  According to this configuration, the first aluminum film grows at the bottom of the recess, and the growth of the first aluminum film is suppressed at the top of the recess. Therefore, the bottom up of the first aluminum film can be achieved, and the embedding property of the first aluminum film can be improved.

  According to a ninth aspect of the present invention, in the semiconductor device manufacturing apparatus according to the eighth aspect of the present invention, the first film forming unit is a chamber that covers the metal film and the metal nitride film by a long throw sputtering method. The gist of the invention is that the control unit makes the film thickness of the metal nitride film located at the edge of the bottom part thinner than the reference film thickness.

  According to this configuration, the first film forming unit reduces the thickness of the metal nitride film at the bottom edge by the shadowing effect. The control unit makes the metal nitride film located at the edge of the bottom part thinner than the reference film thickness, and grows the first aluminum film from the edge of the bottom part. Therefore, the first aluminum film can always grow from the edge of the bottom, and the recess can be buried under high reproducibility.

The invention according to claim 10 is the apparatus for manufacturing a semiconductor device according to claim 8 or 9, wherein the first film forming unit is a reactive sputtering method using a target made of a constituent element of the metal film. The control unit lowers the nitrogen composition ratio of the metal nitride film located at the bottom relative to the nitrogen composition ratio of the metal nitride film located at the top. This is the gist.

  According to this configuration, the first film forming unit can change the nitrogen composition ratio in the metal nitride film by the distribution of the nitriding gas. The control unit relatively lowers the nitrogen composition ratio of the metal nitride film located at the bottom, that is, relatively increases the metal composition ratio of the metal nitride film located at the bottom. Therefore, the first aluminum film promotes growth on the metal nitride film located at the bottom and suppresses growth on the metal nitride film located at the top. As a result, the first aluminum film can further improve the embedding property.

  According to an eleventh aspect of the present invention, in the semiconductor device manufacturing apparatus according to any one of the eighth to tenth aspects, the apparatus includes an annealing unit that raises the temperature of the substrate to a predetermined temperature. Transporting the substrate to the annealing unit, the control unit driving the transport unit to transport the substrate on which the first aluminum film is formed to the annealing unit, and driving the annealing unit. The gist is to raise the temperature of the substrate to the predetermined temperature and to anneal the first aluminum film.

  According to this configuration, the control unit anneals the first aluminum film to improve the adhesion between the first aluminum film and the metal nitride film. Therefore, the state of the first aluminum film can be stabilized, and the embedding property of the first aluminum film can be improved more reliably.

  According to a twelfth aspect of the present invention, there is provided the semiconductor device manufacturing apparatus according to any one of the eighth to eleventh aspects, wherein the substrate is coated with a second aluminum film using a PVD method. A transfer unit that transfers the substrate to the third film forming unit, and the control unit drives the transfer unit to transfer the substrate on which the first aluminum film is formed to the third film forming unit. The gist is to transport the film to the film forming unit and drive the third film forming unit to further stack the second aluminum film on the first aluminum film.

  According to this configuration, the control unit stacks the second aluminum film by the PVD method having excellent processing capability on the first aluminum film by the CVD method having excellent embedding property. Accordingly, the throughput can be improved as compared with the case where all the aluminum films are formed using the CVD method.

  According to a thirteenth aspect of the present invention, in the semiconductor device manufacturing apparatus according to any one of the eighth to twelfth aspects, the first film forming portion is any one of titanium, tantalum, nickel, and cobalt. The gist is to mount a target consisting of three.

  The invention according to claim 14 is the semiconductor device manufacturing apparatus according to any one of claims 8 to 13, wherein the first film forming unit is mounted with a target mainly composed of titanium. The control unit drives the first film forming unit, transports the substrate to the first film forming unit, covers the substrate with a titanium film and a titanium nitride film, and sets the reference film thickness to 5 to 10 nm. To make it a gist.

  As described above, according to the present invention, it is possible to provide a method for manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device with improved Al film embedding.

  Hereinafter, an embodiment embodying the present invention will be described. First, a semiconductor device manufacturing apparatus will be described. FIG. 1 is a plan view schematically showing a film forming apparatus 1 as a manufacturing apparatus. 2 and 3 are schematic cross-sectional views showing the barrier metal chamber 4 and the Al-CVD chamber 5 mounted on the film forming apparatus 1, respectively.

  In FIG. 1, a film forming apparatus 1 includes a load lock chamber (hereinafter simply referred to as an LL chamber) 2 and a core chamber 3 that constitutes a transfer unit. The film forming apparatus 1 includes a barrier metal chamber 4 as a first film forming unit, an Al-CVD chamber 5 as a second film forming unit, an annealing chamber 6 as an annealing unit, and a third film forming unit. And an Al-PVD chamber 7.

  The LL chamber 2 has an internal space (hereinafter simply referred to as a storage chamber 2a) that can be decompressed, and stores a plurality of silicon substrates S so that they can be unloaded and loaded. When the film formation process of the silicon substrate S is started, the LL chamber 2 depressurizes the storage chamber 2a so that the plurality of silicon substrates S can be carried out to the core chamber 3, respectively. When the film forming process for the silicon substrate S is completed, the LL chamber 2 opens the storage chamber 2 a to the atmosphere so that the silicon substrate S stored can be carried out of the film forming apparatus 1.

  The core chamber 3 has an internal space that can be depressurized (hereinafter simply referred to as a transfer chamber 3a), and a transfer robot 3b for transferring the silicon substrate S is mounted on the transfer chamber 3a. When starting the film forming process for the silicon substrate S, the transfer robot 3b carries the silicon substrate S before the film forming process from the LL chamber 2 to the core chamber 3. The transfer robot 3b sequentially transfers the loaded silicon substrates S along the counterclockwise direction in FIG. That is, the transfer robot 3b transfers the loaded silicon substrate S in the order of the barrier metal chamber 4, the Al-CVD chamber 5, the annealing chamber 6, and the Al-PVD chamber 7. When the film forming process of the silicon substrate S is completed, the transfer robot 3b carries out the silicon substrate S after the film forming process from the core chamber 3 to the LL chamber 2.

  The barrier metal chamber 4 is a chamber for coating a metal film on the silicon substrate S using a sputtering method. As the metal film, for example, a titanium (Ti) film, a tantalum (Ta) film, a nickel (Ni) film, a cobalt (Co) film, or the like can be used. The barrier metal chamber 4 is a chamber for coating a metal nitride film on the silicon substrate S by using a reactive sputtering method. As the metal nitride film, for example, a titanium nitride (TiN) film, a tantalum nitride (TaN) film, a nickel nitride (NiN) film, or a cobalt nitride (CoN) film can be used.

In FIG. 2, the barrier metal chamber 4 has a chamber body 11 having an internal space (hereinafter simply referred to as a film forming chamber 4a) that can be decompressed. An argon (Ar) mass flow controller MC1 is connected to the chamber body 11 via a supply pipe IL1, and a nitrogen (N ₂ ) mass flow controller MC2 is connected via a supply pipe IL2. Each mass flow controller MC1, MC2 adjusts Ar gas and N ₂ gas to a predetermined flow rate and supplies them to the film forming chamber 4a.

An exhaust system 12 including a turbo molecular pump, a dry pump, and the like is connected to the chamber body 11 via an exhaust pipe OL1. The exhaust system 12 evacuates Ar gas or a mixed gas of Ar gas and N ₂ gas supplied to the film forming chamber 4a, and depressurizes the film forming chamber 4a to a predetermined pressure value.

A substrate holder 13 for placing the silicon substrate S is disposed in the chamber body 11. The substrate holder 13 places the silicon substrate S carried in from the core chamber 3, and positions and fixes the silicon substrate S at a predetermined position in the film forming chamber 4a.

  A target 14 formed in a disk shape is disposed immediately above the substrate holder 13. The target 14 contains 90% or more, preferably 95% or more of the main component of the metal film, that is, Ti, Ta, Ni or Co, and the remainder contains a metal other than the metal element, such as copper or silicon. Can be used.

  A target electrode 15 is disposed on the upper side of the target 14. The target electrode 15 is connected to an external power supply 16 and receives predetermined direct current or alternating current power from the external power supply 16. When the plasma is generated in the film forming chamber 4a, the target electrode 15 that receives direct current or alternating current power functions as a negative potential with respect to the plasma space, that is, as a cathode and causes the target 14 to be sputtered.

  The target electrode 15 makes the target 14 face the silicon substrate S, and holds the distance between the target 14 and the silicon substrate S at a predetermined distance. The distance between the target 14 and the silicon substrate S (the flight distance L in FIG. 2) is set to a sufficiently large size with respect to the radius of the target 14. The flight distance L is set to a size such that the sputtered metal particles fly along the substantially normal direction of the silicon substrate S and enter the surface of the silicon substrate S, for example, a size larger than the diameter of the silicon substrate S. That is, the barrier metal chamber 4 forms a metal film or a metal nitride film by a long throw sputtering method.

  A magnetic circuit 17 is disposed above the target electrode 15. The magnetic circuit 17 forms a magnetron magnetic field along the inner surface of the target 14 and stabilizes the plasma to increase its density when plasma is generated in the film forming chamber 4a.

  When the barrier metal chamber 4 coats the surface of the silicon substrate S with a metal film, the mass flow controller MC1 supplies Ar gas at a predetermined flow rate, and the exhaust system 12 reduces the film forming chamber 4a to a predetermined pressure value. . In this state, the barrier metal chamber 4 applies a predetermined direct current power to the external power supply 16 to cause the target 14 to be sputtered by high-density Ar plasma. The sputtered metal particles fly along a substantially normal direction of the silicon substrate S, enter the surface of the silicon substrate S, and cover the surface. Thereby, the barrier metal chamber 4 forms a metal film with excellent step coverage on the surface of the silicon substrate S.

When the metal nitride film is coated on the surface of the silicon substrate S, the barrier metal chamber 4 supplies Ar gas and N ₂ gas at a predetermined flow rate by the mass flow controllers MC1 and MC2, respectively, and the film forming chamber 4a by the exhaust system 12. Is reduced to a predetermined pressure value. In this state, the barrier metal chamber 4 applies a predetermined direct current power to the external power source 16 and causes the target 14 to be sputtered by high-density Ar / N ₂ plasma. The sputtered metal particles fly along a substantially normal direction of the silicon substrate S and enter the surface of the silicon substrate S. The metal particles react with the N ₂ plasma to form a metal nitride film and cover the surface of the silicon substrate S. Thereby, the barrier metal chamber 4 forms a metal nitride film having excellent step coverage on the surface of the silicon substrate S.

  In FIG. 1, an Al-CVD chamber 5 is a chamber for forming a first aluminum film (hereinafter simply referred to as an Al-CVD film) on a silicon substrate S using a CVD method.

In FIG. 3, the Al-CVD chamber 5 has a chamber body 21 having an internal space (hereinafter simply referred to as a film forming chamber 5a) that can be decompressed. In the chamber main body 21, an Al-CVD film source material (hereinafter simply referred to as an Al film source) is formed into a film forming chamber 5a via a supply pipe IL3.
A transportation system 22 for transportation to the vehicle is connected.

As the Al film raw material, for example, DMAH (Dimethyl Aluminum Hydride), TMAA (Trimethylamine Alane), MPA (Methylpyrrolidine Alane)) can be used. For the transport system 22, for example, a bubbling system that regulates the flow rate of the Al film material by the flow rate of the carrier gas can be used. Transportation system 2
2 includes a vapor flow control system that controls the flow rate of the Al film material in a gaseous state by a mass flow controller, and a liquid phase transport system that directly transports the Al film material in a liquid state (LDS: liquid delivery system) can be used.

  An exhaust system 23 including a dry pump is connected to the chamber body 21 via an exhaust pipe OL2. The exhaust system 23 exhausts the Al film raw material and the carrier gas supplied to the film forming chamber 5a to reduce the film forming chamber 5a to a predetermined pressure value.

  The chamber body 21 is provided with a substrate holder 24 for placing the silicon substrate S thereon. The substrate holder 24 places the silicon substrate S carried in from the core chamber 3, and positions and fixes the silicon substrate S at a predetermined position in the film forming chamber 5a. The substrate holder 24 is provided with a heater 26 connected to the heater power supply 25. When the silicon substrate S is placed, the heater 26 raises the temperature of the silicon substrate S to a predetermined temperature.

  A shower plate 27 formed in a disk shape is disposed immediately above the substrate holder 24. The shower plate 27 has a plurality of nozzles 28 communicating with the supply pipe IL3 on the side surface facing the silicon substrate S. Each nozzle 28 supplies the Al film raw material supplied from the transport system 22 toward the film formation chamber 5a, that is, the surface of the silicon substrate S.

  In the Al-CVD chamber 5, when an Al-CVD film is formed on the surface of the silicon substrate S, the temperature of the silicon substrate S is raised to a predetermined temperature by the substrate holder 24, and an Al film material is formed by the transport system 22. 5a is supplied. The Al film raw material supplied to the film forming chamber 5a adheres to the surface of the silicon substrate S and grows by electron transfer, that is, surface reaction with the surface.

  Here, when the metal nitride film with the metal film as the base constitutes the surface of the silicon substrate S, the Al film raw material has poor adhesion with the metal nitride film, and also exchanges electrons with the metal nitride film. Therefore, it is difficult to initiate a surface reaction on the metal nitride film.

  In examining the embedding performance of the Al-CVD film, the inventors of the present invention, when the metal nitride film is thinner than a predetermined film thickness, the metal nitride film displays information on the underlying layer, that is, the characteristics of the metal film. Reflecting this, it was found that the incubation time of the Al-CVD film was shortened on the metal nitride film.

  Hereinafter, regarding the film thickness of the metal nitride film, the maximum film thickness at which the Al film raw material starts a surface reaction on the metal nitride film and grows the Al-CVD film is referred to as a “reference film thickness”. For example, the reference film thickness is determined by supplying an Al film material on a metal nitride film having a different thickness with a metal film as a base, and whether an Al-CVD film is formed on the metal nitride film having each thickness. It can be defined by judging. When the metal film was a Ti film and the metal nitride film was a TiN film, the reference film thickness was 5 to 10 [nm].

In FIG. 1, the annealing chamber 6 has an internal space (hereinafter simply referred to as annealing chamber 6a) for heat-treating the silicon substrate S at a high temperature. When the silicon substrate S is transferred from the core chamber 3, the annealing chamber 6 accommodates the silicon substrate S in the annealing chamber 6 a and heat-treats the silicon substrate S in an inert gas (for example, Ar) atmosphere.

  In FIG. 1, an Al-PVD chamber 7 has an internal space (hereinafter simply referred to as a film forming chamber 7a) for forming an aluminum film on a silicon substrate S by using a sputtering method. When the silicon substrate S is transferred from the core chamber 3, the Al-PVD chamber 7 stores the silicon substrate S in the film formation chamber 7 a, sputters an Al target for forming an aluminum film, and Then, an aluminum film is formed. The aluminum film formed by the Al-PVD chamber 7 is referred to as a second aluminum film (hereinafter simply referred to as an Al-PVD film).

Next, the electrical configuration of the film forming apparatus 1 will be described. FIG. 4 is an electric block circuit diagram showing an electrical configuration of the film forming apparatus 1.
In FIG. 4, the control unit 31 causes the film forming apparatus 1 to execute various processing operations (for example, a transfer process of the silicon substrate S and a film forming process of the silicon substrate S). The control unit 31 includes a CPU for executing various arithmetic processes, a RAM for storing various data, a ROM for storing various control programs, a hard disk, and the like. For example, the control unit 31 reads a film forming process program stored in the hard disk and causes the film forming process to be executed according to the film forming process program.

  An input / output unit 32 is connected to the control unit 31. The input / output unit 32 includes various operation switches such as a start switch and a stop switch, and various display devices such as a liquid crystal display. The input / output unit 32 inputs data used for various processing operations to the control unit 31 and outputs data related to the processing status of the film forming apparatus 1. The input / output unit 32 inputs data relating to film formation parameters (for example, gas flow rate, pressure value in the internal space, temperature of the silicon substrate S, film formation time, etc.) to the control unit 31 as film formation condition data Id. That is, the input / output unit 32 controls the film formation parameters for forming the metal film, the metal nitride film, the Al-CVD film, and the Al-PVD film, and the parameters for executing the annealing process as the film formation condition data Id. Input to the unit 31. The control unit 31 receives the film forming condition data Id input from the input / output unit 32, and causes each film forming process to be executed under the film forming condition corresponding to the film forming condition data Id.

  An LL chamber driving circuit 33 for driving and controlling the LL chamber 2 is connected to the control unit 31. The LL chamber drive circuit 33 detects the state of the LL chamber 2 and inputs the detection result to the control unit 31. For example, the LL chamber drive circuit 33 detects the pressure value of the storage chamber 2 a and inputs a detection signal related to the pressure value to the control unit 31. The control unit 31 uses the detection signal input from the LL chamber drive circuit 33 and outputs a drive control signal corresponding to the LL chamber drive circuit 33 to the LL chamber drive circuit 33. The LL chamber drive circuit 33 responds to the drive control signal from the control unit 31 and allows the silicon substrate S to be loaded or unloaded by reducing the pressure in the storage chamber 2a or opening it to the atmosphere.

  A core chamber drive circuit 34 for driving and controlling the core chamber 3 is connected to the control unit 31. The core chamber drive circuit 34 detects the state of the core chamber 3 and inputs the detection result to the control unit 31. The core chamber drive circuit 34 detects the arm position of the transfer robot 3b, for example, and inputs a detection signal related to the arm position to the control unit 31. The control unit 31 uses the detection signal input from the core chamber drive circuit 34 and outputs a drive control signal corresponding to the core chamber drive circuit 34 to the core chamber drive circuit 34. The core chamber drive circuit 34 responds to the drive control signal from the control unit 31, and converts the silicon substrate S into the LL chamber 2, the core chamber 3, the barrier metal chamber 4, the Al-CVD chamber 5, the annealing chamber 6, and the Al-PVD chamber. Transport in the order of 7.

  A barrier metal chamber drive circuit 35 for driving and controlling the barrier metal chamber 4 is connected to the control unit 31. The barrier metal chamber drive circuit 35 detects the state of the barrier metal chamber 4 and inputs the detection result to the control unit 31. The barrier metal chamber drive circuit 35 detects, for example, the pressure value of the film forming chamber 4a, the actual flow rate of each gas type, the output value of the external power supply 16, and the like, and inputs detection signals related to these parameters to the control unit 31. The control unit 31 uses the detection signal input from the barrier metal chamber drive circuit 35 and outputs a drive control signal corresponding to the film formation condition data Id to the barrier metal chamber drive circuit 35. The barrier metal chamber drive circuit 35 drives the mass flow controllers MC1 and MC2, the exhaust system 12, the external power supply 16 and the like in response to the drive control signal from the control unit 31, and the film formation conditions corresponding to the film formation condition data Id. The film forming process of the metal film and the metal nitride film is executed.

  An Al-CVD chamber driving circuit 36 for driving and controlling the Al-CVD chamber 5 is connected to the control unit 31. The Al-CVD chamber drive circuit 36 detects the state of the Al-CVD chamber 5 and inputs the detection result to the control unit 31. The Al-CVD chamber drive circuit 36 detects, for example, the pressure value of the film forming chamber 5a, the actual flow rate of the Al film material, the actual temperature of the silicon substrate S, and the like, and inputs detection signals related to these parameters to the control unit 31. The control unit 31 uses the detection signal input from the Al-CVD chamber drive circuit 36 and outputs a drive control signal corresponding to the film formation condition data Id to the Al-CVD chamber drive circuit 36. The Al-CVD chamber drive circuit 36 drives the transport system 22, the exhaust system 23, the heater power supply 25, etc. in response to the drive control signal from the control unit 31, under the film formation conditions corresponding to the film formation condition data Id. Then, the film forming process of the Al-CVD film is executed.

  An annealing chamber drive circuit 37 for driving and controlling the annealing chamber 6 is connected to the control unit 31. The annealing chamber drive circuit 37 detects the state of the annealing chamber 6 and inputs the detection result to the control unit 31. The annealing chamber drive circuit 37 detects, for example, the pressure value of the annealing chamber 6a, the actual temperature of the silicon substrate S, and the like, and inputs detection signals regarding these parameters to the control unit 31. The control unit 31 uses the detection signal input from the annealing chamber driving circuit 37 and outputs a driving control signal corresponding to the film forming condition data Id to the annealing chamber driving circuit 37. In response to the drive control signal from the control unit 31, the annealing chamber drive circuit 37 executes the annealing process for the silicon substrate S under the film formation conditions corresponding to the film formation condition data Id.

  An Al-PVD chamber driving circuit 38 for driving and controlling the Al-PVD chamber 7 is connected to the control unit 31. The Al-PVD chamber drive circuit 38 detects the state of the Al-PVD chamber 7 and inputs the detection result to the control unit 31. The Al-PVD chamber drive circuit 38 detects, for example, the pressure value of the film forming chamber 7 a and the power value applied to the Al target, and inputs detection signals related to these parameters to the control unit 31. The control unit 31 uses the detection signal input from the Al-PVD chamber drive circuit 38 and outputs a drive control signal corresponding to the film formation condition data Id to the Al-PVD chamber drive circuit 38. In response to the drive control signal from the control unit 31, the Al-PVD chamber drive circuit 38 executes the Al-PVD film formation process under the film formation conditions corresponding to the film formation condition data Id.

Next, a method for manufacturing a semiconductor device using the film forming apparatus 1 will be described. 5 to 9 are process diagrams showing the manufacturing process of the semiconductor device.
First, a plurality of silicon substrates S having a diameter of 200 [mm] are set in the LL chamber 2. As shown in FIG. 5, the silicon substrate S includes a metal wiring ML and an interlayer insulating film DL stacked on the metal wiring ML. Various metal materials such as Al wiring and copper wiring can be used for the metal wiring ML. Various insulating materials such as a silicon oxide film or a silicon oxide film to which phosphorus or boron is added can be used for the interlayer insulating film DL.

  On the surface of the interlayer insulating film DL (upper surface in FIG. 5), a hole (via hole VH (Via hole)) as a recess penetrating to the metal wiring ML is formed. The inner diameter Rvh of the via hole VH is 145 [nm], and the depth Dvh of the via hole VH is 600 [nm]. That is, the surface of the silicon substrate S has a via hole VH having an aspect ratio of 4.13. Here, the upper end portion of the via hole VH is defined as a hole upper end portion VHt. Further, the bottom edge of the via hole VH is defined as a hole lower end VHb.

  The control unit 31 receives the film formation condition data Id from the input / output unit 32. Further, the control unit 31 drives the LL chamber 2 and the core chamber 3 via the LL chamber driving circuit 33 and the core chamber driving circuit 34, and transports the silicon substrate S in the storage chamber 2 a to the barrier metal chamber 4.

  When the silicon substrate S is carried into the film forming chamber 4a, the control unit 31 drives the barrier metal chamber 4 via the barrier metal chamber driving circuit 35, and the metal under the film forming conditions corresponding to the film forming condition data Id. The film BM1 is coated (hereinafter simply referred to as a metal film process).

  As shown in FIG. 5, in this metal film process, the metal particles are formed in the via hole VH by the amount of using the long throw sputtering method, that is, the amount of deviation of the incident direction of the metal particles in the normal direction of the silicon substrate S. Reach up to the bottom. Therefore, the inside of the via hole VH is entirely covered with the metal film BM1 having high adhesion with the interlayer insulating film DL. Note that, at the hole upper end portion VHt, the thickness of the metal film BM1 is increased as the incidence of metal particles is higher. Conversely, at the bottom of the via hole VH, the metal film BM1 has a mountain shape under the influence of the shadowing effect, and the film thickness decreases toward the hole lower end VHb.

As the film forming conditions in the metal film step, the following conditions are preferably mentioned.
-Main component of target 14: Ti
Ar flow rate: 5 to 100 [sccm]
Film forming pressure: 1 × 10 ^{−2 to} 0.5 [Pa]
-Substrate temperature: Room temperature to 350 [° C]
・ Deposition rate: 10-200 [nm / min]
Film thickness: 5 to 40 [nm] (more preferably 15 [nm])
When the pressure in the film forming chamber 4a increases from 10 [Pa], the incident direction of the sputtered metal particles (Ti particles) is greatly inclined from the normal direction of the silicon substrate S, and the metal film BM1 (Ti film) The step coverage is significantly impaired. Similarly, the step coverage of the Ti film is significantly impaired even under conditions where the deposition rate is higher than 500 [nm / min].

  When the metal film BM1 is formed, the control unit 31 drives the barrier metal chamber 4 via the barrier metal chamber drive circuit 35 and covers the metal nitride film BM2 under the film formation conditions corresponding to the film formation condition data Id. (Hereinafter simply referred to as a metal nitride film process).

  As shown in FIGS. 6 and 7, in the above metal nitride film process, only the amount of using the long throw sputtering method, that is, the amount of biasing the distribution of the incident direction of the metal particles in the normal direction of the silicon substrate S, The metal particles reach the bottom of the via hole VH, and the metal nitride film BM2 covers the entire metal film BM1. More specifically, in the vicinity of the hole upper end portion VHt, the metal nitride film BM2 is made thicker as the incident probability of the metal particles is higher. Conversely, at the bottom of the via hole VH, the metal nitride film BM2 has a mountain shape under the influence of the shadowing effect, and its film thickness decreases toward the hole lower end VHb.

  At this time, the film thickness corresponding to the hole upper end portion VHt in the film thickness of the metal nitride film BM2 is referred to as an upper end film thickness Tt. The film thickness corresponding to the hole lower end VHb in the film thickness of the metal nitride film BM2 is referred to as the lower end film thickness Tb. The control unit 31 makes the upper end film thickness Tt thicker than the reference film thickness (for example, 10 [nm]) by the film formation parameters (for example, pressure and film formation time) according to the film formation condition data Id. And this lower end film thickness Tb is made thinner than the reference film thickness. For example, the control unit 31 sets the upper film thickness Tt to 20 [nm] and the lower film thickness Tb to 5 [nm].

In addition, the control unit 31 generates N ₂ plasma on the silicon substrate S, so that the nitrogen composition ratio of the metal nitride film BM2 located at the hole upper end portion VHt is changed to that of the metal nitride film BM2 located at the hole lower end portion VHb. Relatively higher than the nitrogen composition ratio. That is, the control unit 31 makes the metal composition ratio of the metal nitride film BM2 located at the hole lower end VHb relatively higher than the metal composition ratio located at the hole upper end VHt.

As the film forming conditions in the metal nitride film process, the following conditions are preferably mentioned.
-Main component of target 14: Ti
Ar flow rate: 5 to 100 [sccm]
・ N ₂ flow rate: 5 to 100 [sccm]
Film forming pressure: 5 × 10 ^{−2 to} 100 [Pa]
-Substrate temperature: Room temperature to 350 [° C]
・ Deposition rate: 10-200 [nm / min]
-Thickness of hole upper end portion VHt (hereinafter simply referred to as upper end film thickness Tt): 4 to 20 [nm]
-Thickness of hole lower end portion VHb (hereinafter simply referred to as lower end thickness Tb): 1 to 5 [nm]
When the metal nitride film BM2 is formed, the control unit 31 drives the Al-CVD chamber 5 via the Al-CVD chamber drive circuit 36 and performs Al-CVD under the film formation conditions corresponding to the film formation condition data Id. A film P1 is formed (hereinafter simply referred to as an Al-CVD film process).

  As shown in FIG. 7, in the Al-CVD film process, the lower end film thickness Tb is thinner than the reference film thickness. Therefore, the nucleus of the Al-CVD film P1 is formed in the hole lower end portion VHb, and the Al-CVD film P1 starts to grow from the hole lower end portion VHb. On the other hand, the upper end film thickness Tt is larger than the reference film thickness. Therefore, the nucleus of the Al-CVD film P1 is not formed at the hole upper end portion VHt, and the metal nitride film BM2 maintains the opening diameter of the via hole VH.

  Moreover, the metal composition ratio of the metal nitride film BM2 located at the hole lower end VHb is relatively higher than the metal composition ratio located at the hole upper end VHt. Therefore, the metal nitride film BM2 located at the hole lower end VHb relatively reflects the characteristics of the metal film BM1 and accelerates the growth of the Al-CVD film P1. On the contrary, the metal nitride film BM2 located at the hole upper end portion VHt relatively reflects its own characteristics as a nitride film, and suppresses the growth of the Al-CVD film P1 more reliably.

  Furthermore, the outermost surface of the Al-CVD film P1 exhibits a mountain shape reflecting the shape of the metal nitride film BM2 located at the bottom during the growth process. For this reason, the Al-CVD film P1 does not protrude from the side wall of the via hole VH and continues to grow toward the opening while exhibiting a shape in which voids are difficult to form.

  As a result, as shown in FIG. 7, the control unit 31 bottoms up the Al—CVD film P <b> 1 while maintaining the state where the opening of the via hole VH is opened. Then, as shown in FIG. 8, the control unit 31 grows the Al-CVD film P1 only inside the via hole VH, completely fills the inside of the via hole VH with the Al-CVD film P1, and forms the Al-CVD film P1. Finish the film formation.

As film formation conditions in the Al-CVD film process, the following conditions are preferable.
・ MPA flow rate: 1 to 100 [sccm]
-Film formation pressure: 5 to 1500 [Pa]
Substrate temperature: 80 to 300 [° C.] (more preferably 100 [° C.])
・ Deposition rate: 10-300 [nm / min]
Note that when the pressure in the film forming chamber 5a falls below 1 [Pa], the film forming speed of the Al-CVD film P1 is significantly impaired due to the decrease in MPA concentration. Conversely, when the pressure in the film forming chamber 5a increases from 2000 [Pa], the uniformity of MPA, that is, the film thickness uniformity of the Al-CVD film P1 is impaired. Moreover, when the substrate temperature falls below 80 [° C.], the deposition rate of the Al-CVD film P1 is significantly impaired.

  When the Al-CVD film P1 is formed, the control unit 31 drives the annealing chamber 6 via the annealing chamber driving circuit 37, and the silicon substrate S, that is, Al under the film forming conditions corresponding to the film forming condition data Id. -The CVD film P1 is annealed (hereinafter simply referred to as an annealing step). In this annealing step, the adhesion between Al and the metal nitride film is improved. Therefore, when another film is stacked on the Al-CVD film, it is possible to avoid outflow or peeling of the Al-CVD film from the via hole VH. As a result, the inside of the via hole VH can be completely filled with the Al-CVD film, and a more reliable via plug can be formed.

As the heat treatment conditions in the annealing step, the following conditions are preferable.
Film deposition pressure: 1 × 10 ^{−5 to} 500 [Pa]
Substrate temperature: 250 to 500 [° C.] (more preferably, 460 [° C.])
・ Processing time: 0.1-10 [min]
When the annealing step is finished, the control unit 31 drives the Al-PVD chamber 7 via the Al-PVD chamber drive circuit 38, and the Al-PVD film P2 under the film formation conditions corresponding to the film formation condition data Id. (Hereinafter, simply referred to as an Al-CVD film process). The Al-PVD film P2 is a sacrificial film for planarizing the surface of the Al-CVD film P1, and most of it is polished in the planarization process. For this reason, as the film formation conditions in the Al-PVD film process, conditions in which the film formation speed is high (for example, conditions in which electric power applied to the Al target is large) are preferable in order to shorten the processing time.

According to the said embodiment, there exist the following effects.
(1) In the above embodiment, the controller 31 covers the surface of the silicon substrate S having the via hole VH with the metal film BM1 (Ti film) and the metal nitride film BM2 (TiN film), and covers the metal nitride film BM2. An Al-CVD film P1 was formed inside the formed via hole VH using the CVD method. Then, the control unit 31 covers the metal nitride film BM2 under the film formation condition corresponding to the film formation condition data Id, and the film thickness of the metal nitride film BM2 located at the bottom of the via hole VH is smaller than the reference film thickness. The metal nitride film BM2 formed above the via hole VH is formed thicker than the reference film thickness.

  Therefore, an Al-CVD film can be grown from the bottom of the via hole VH, and the opening of the via hole VH can be continuously opened. As a result, bottom-up of the Al-CVD film can be achieved, and the embedding property of the Al-CVD film can be improved.

(2) In addition, the control unit 31 coats the metal nitride film BM2 by the long throw sputtering method, and the bottom edge thickness Tb corresponding to the bottom edge of the via hole VH, that is, the hole lower end VHb is thinner than the reference film thickness. did. Therefore, the Al-CVD film P1 can always be grown from the hole lower end portion VHb, and variations in the growth starting position and the shape of the growth process can be reduced. As a result, the via hole VH can be filled with the Al-CVD film P1 under high reproducibility.

  (3) In the above embodiment, the control unit 31 coats the metal nitride film BM2 by reactive sputtering, coats the metal nitride film BM2 having a relatively high nitrogen composition ratio in the vicinity of the hole upper end portion VHt, A metal nitride film BM2 having a relatively high metal composition ratio was coated in the vicinity of the hole lower end VHb. Therefore, the metal nitride film BM2 positioned at the bottom of the via hole VH further promotes the growth of the Al-CVD film P1, and the metal nitride film BM2 positioned above the via hole VH further suppresses the growth of the Al-CVD film P1. Let As a result, the burying property of the Al-CVD film P1 can be further improved.

  (4) In the above embodiment, the control unit 31 anneals the Al-CVD film P1. Therefore, the adhesion between the Al-CVD film P1 and the metal nitride film BM2 can be improved, and the embedded state of the Al-CVD film P1 can be stabilized.

  (5) In the said embodiment, the control part 31 laminates | stacks the Al-PVD film | membrane P2 further using the PVD method on the Al-CVD film | membrane P1. Therefore, a via plug can be formed by the Al-CVD film P1 by the CVD method having excellent embedding property and the Al-PVD film P2 by the PVD method having excellent processing ability. As a result, the throughput can be improved as compared with the case where all via plugs are formed using the CVD method.

  (6) In the above embodiment, the metal film BM1 and the metal nitride film BM2 can be formed in the same chamber, that is, the barrier metal chamber 4. Therefore, the configuration of the film forming apparatus 1 can be simplified as compared with the case where the metal film BM1 and the metal nitride film BM2 are covered by different chambers.

In addition, you may implement the said embodiment in the following aspects.
In the above embodiment, the concave portion is embodied as the via hole VH. For example, the recess may be embodied as a contact hole. Further, as shown in FIG. 10, a groove for forming a damascene wiring may be embodied as a concave portion.

  In the above embodiment, the barrier metal chamber 4 is embodied as a chamber for forming a film by the long throw sputtering method. For example, the barrier metal chamber 4 may be embodied as a PVD chamber or a CVD chamber that does not use the long throw sputtering method. In other words, the barrier metal chamber 4 may be a chamber in which the upper end film thickness Tt is thicker than the reference film thickness and the lower end film thickness Tb is thinner than the reference film thickness.

  In the above embodiment, the barrier metal chamber 4 is embodied as a DC magnetron type chamber. For example, the barrier metal chamber 4 may be embodied as a simple DC sputtering method, AC sputtering method, or AC magnetron chamber. In other words, the barrier metal chamber 4 may be a chamber in which the upper end film thickness Tt is thicker than the reference film thickness and the lower end film thickness Tb is thinner than the reference film thickness.

  In the above embodiment, the annealing part is embodied in the annealing chamber 6. For example, the annealing unit may be embodied as a heating unit (substrate stage or lamp heater) that enables annealing, and may be provided in the film forming chamber 7 a of the Al-PVD chamber 7. According to this, the configuration of the film forming apparatus 1 can be simplified as much as the annealing chamber 6 is not required.

In the above embodiment, the second aluminum film is formed by the Al-PVD chamber 7. For example, the second aluminum film may be formed by the Al-CVD chamber 5. According to this, the configuration of the film forming apparatus 1 can be simplified as much as the Al-PVD chamber 7 is not required.

1 is a schematic plan view showing a film forming apparatus. The schematic sectional drawing which shows a barrier metal chamber. The schematic sectional drawing which shows an Al-CVD chamber. The electric block circuit diagram which shows the electrical constitution of the film-forming apparatus. Process drawing which shows the manufacturing method of a semiconductor device. Process drawing which shows the manufacturing method of a semiconductor device. Process drawing which shows the manufacturing method of a semiconductor device. Process drawing which shows the manufacturing method of a semiconductor device. Process drawing which shows the manufacturing method of a semiconductor device. Process drawing which shows the manufacturing method of the semiconductor device in the example of a change.

Explanation of symbols

  BM1 ... Metal film, BM2 ... Metal nitride film, P1 ... First aluminum film, P2 ... Second aluminum film, S ... Silicon substrate, VH ... Via hole as a recess, 1 ... Film forming apparatus as a semiconductor device manufacturing apparatus, DESCRIPTION OF SYMBOLS 3 ... Core chamber as a conveyance part, 4 ... Barrier metal chamber as a 1st film-forming part, 5 ... Al-CVD chamber as a 2nd film-forming part, 6 ... Annealing chamber as an annealing part, 7 ... 3rd composition Al-PVD chamber as a film part, 14 ... target, 31 ... control part.

Claims (14)

Coating a metal film on the surface of the substrate having a recess;
Coating the surface of the metal film with a metal nitride film;
Forming a first aluminum film using a CVD method inside the recess covered with the metal nitride film;
A method of manufacturing a semiconductor device having
When the thickness of the metal nitride film when the first aluminum film grows on the metal nitride film is a reference film thickness,
When the metal nitride film is coated on the metal film, the metal nitride film located at the bottom of the recess is formed thinner than the reference film thickness, and the metal nitride located at the top of the recess Forming the film thickness to be thicker than the reference film thickness;
A method of manufacturing a semiconductor device. A method of manufacturing a semiconductor device according to claim 1,
Coating the metal nitride film by a long throw sputtering method, and making the film thickness of the metal nitride film located at the edge of the bottom part thinner than the reference film thickness,
A method of manufacturing a semiconductor device. A method of manufacturing a semiconductor device according to claim 1 or 2,
The metal nitride film is coated by a reactive sputtering method, and the nitrogen composition ratio of the metal nitride film located at the bottom is relatively lower than the nitrogen composition ratio of the metal nitride film located at the top. thing,
A method of manufacturing a semiconductor device. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 3,
Annealing the first aluminum film;
A method of manufacturing a semiconductor device. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 4,
A second aluminum film is further laminated on the first aluminum film using a PVD method;
A method of manufacturing a semiconductor device. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 5,
The metal film is made of any one of titanium, tantalum, nickel, and cobalt;
The metal nitride film is made of any one of titanium nitride, tantalum nitride, nickel nitride, and cobalt nitride;
A method of manufacturing a semiconductor device. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 6,
The metal film has titanium as a main component;
The metal nitride film is mainly composed of titanium nitride;
The reference film thickness is 5 to 10 nm;
A method of manufacturing a semiconductor device. A first film-forming part for coating a metal film on the surface of the substrate and coating the metal film with a metal nitride film;
A second film forming unit that forms a first aluminum film on the substrate using a CVD method;
A transport unit for transporting the substrate to the first film forming unit and the second film forming unit;
Driving the transport unit and the first film forming unit, transporting the substrate having a recess on the surface to the first film forming unit to cover the metal film and the metal nitride film on the substrate; The transporting unit and the second film forming unit are driven, the substrate having the metal nitride film is transported to the second film forming unit, and the first aluminum film is formed inside the recess covered with the metal nitride film. And a control unit for forming
The controller is
When the thickness of the metal nitride film when the first aluminum film is grown on the metal nitride film is defined as a reference film thickness, the metal nitride that is positioned at the bottom of the recess is driven by the first film forming portion. Making the film thickness thinner than the reference film thickness, and making the film thickness of the metal nitride film located above the recess thicker than the reference film thickness,
An apparatus for manufacturing a semiconductor device. A semiconductor device manufacturing apparatus according to claim 8,
The first film forming unit is a chamber for coating the metal film and the metal nitride film by a long throw sputtering method.
The controller is configured to make the thickness of the metal nitride film located at the edge of the bottom portion thinner than the reference thickness;
An apparatus for manufacturing a semiconductor device. A manufacturing apparatus of a semiconductor device according to claim 8 or 9,
The first film forming unit is a chamber for forming the metal nitride film by a reactive sputtering method using a target made of a constituent element of the metal film;
The control unit lowers the nitrogen composition ratio of the metal nitride film located at the bottom relative to the nitrogen composition ratio of the metal nitride film located at the top;
An apparatus for manufacturing a semiconductor device. It is a manufacturing apparatus of the semiconductor device according to any one of claims 8 to 10,
An annealing portion for raising the temperature of the substrate to a predetermined temperature,
The transport unit transports the substrate to the annealing unit;
The control unit drives the transport unit to transport the substrate on which the first aluminum film is formed to the annealing unit, and drives the annealing unit to raise the temperature of the substrate to the predetermined temperature. Annealing the first aluminum film;
An apparatus for manufacturing a semiconductor device. It is a manufacturing apparatus of the semiconductor device according to any one of claims 8 to 11,
A third film-forming part for covering the substrate with a second aluminum film using a PVD method;
The transport unit transports the substrate to the third film forming unit;
The control unit drives the transport unit to transport the substrate on which the first aluminum film is formed to the third film forming unit, and drives the third film forming unit to drive the first aluminum film. Further laminating the second aluminum film on the top,
An apparatus for manufacturing a semiconductor device. It is a manufacturing apparatus of the semiconductor device according to any one of claims 8 to 12,
The first film forming unit is equipped with a target made of any one of titanium, tantalum, nickel, and cobalt,
An apparatus for manufacturing a semiconductor device. It is a manufacturing apparatus of the semiconductor device according to any one of claims 8 to 13,
The first film forming unit is equipped with a target mainly composed of titanium,
The controller is
The transport unit and the first film forming unit are driven to transport the substrate to the first film forming unit so that the substrate is covered with a titanium film and a titanium nitride film, and the reference film thickness is set to 5 to 10 nm. thing,
A method of manufacturing a semiconductor device.

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