JP2008139112A

JP2008139112A - Semiconductor temperature sensor device

Info

Publication number: JP2008139112A
Application number: JP2006324351A
Authority: JP
Inventors: Natsuki Hashiba; 夏樹羽柴
Original assignee: Seiko NPC Corp
Current assignee: Seiko NPC Corp
Priority date: 2006-11-30
Filing date: 2006-11-30
Publication date: 2008-06-19

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor temperature sensor device of satisfactory thermal responsivity. <P>SOLUTION: This semiconductor temperature sensor device 1 is made by mounting a chip-like semiconductor temperature sensor 3, by means of flip chip bonding on the side of its temperature sensitive surface 3a, on a thin polyimide film 2 of low thermal conductivity, and is put in a non-sealed state without being packaged. With the rear face 3b of insulation silicone exposed on the opposite side of the sensitive surface 3a of the temperature sensor 3, the exposed rear face 3b is kept in direct contact with a measured object 6 to perform measurement. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、チップ状の半導体温度センサを用いた半導体温度センサ装置に関する。 The present invention relates to a semiconductor temperature sensor device using a chip-shaped semiconductor temperature sensor.

チップ状の半導体温度センサは、支持部材との電気的な接続を行った後、樹脂により封止され、パッケージ形態となって使用されるのが一般的である（例えば、特許文献１）。 A chip-shaped semiconductor temperature sensor is generally used in a package form after being electrically connected to a support member and then sealed with a resin (for example, Patent Document 1).

特開２００４−１６５４０４号公報JP 2004-165404 A

ところが、上述の一般的な半導体温度センサでは、パッケージ形態のため、その適用範囲が、電気回路の基板上に実装されて温度計測を行う用途にほぼ限定されている。また、パッケージ形態のため、被測定物と半導体温度センサとは間接的にしか接触できないので、熱応答性が劣り、半導体温度センサの持つ優れた機能、すなわち、高速熱応答性、温度−出力特性における直線性、動作の安定性、周辺回路不要でアナログ電圧出力を得られることによる出力信号の後処理の容易性、を十分に活かしきれていない。本発明は、このような不都合を解消した半導体温度センサ装置を提供することを目的とする。 However, since the above-described general semiconductor temperature sensor has a package form, its application range is almost limited to an application in which temperature measurement is performed by mounting on a substrate of an electric circuit. In addition, because of the package form, the object to be measured and the semiconductor temperature sensor can only contact indirectly, so the thermal response is inferior, and the excellent functions of the semiconductor temperature sensor, that is, high-speed thermal response, temperature-output characteristics The linearity, operational stability, and ease of post-processing of the output signal by obtaining an analog voltage output without the need for peripheral circuits are not fully utilized. An object of this invention is to provide the semiconductor temperature sensor apparatus which eliminated such an inconvenience.

本発明に係る半導体温度センサ装置は、半導体温度センサ自体を直接被測定物に接触し得るようにしたもので、具体的には、熱伝導性が低い支持部材、例えば薄いポリイミドフィルム上に、チップ状の半導体温度センサをその感温面側において、フリップチップボンディングにより実装し、パッケージ化せずに非封止状態にして、半導体温度センサの裏面を露出状態としたものである。 The semiconductor temperature sensor device according to the present invention is configured so that the semiconductor temperature sensor itself can be in direct contact with an object to be measured. Specifically, a chip is formed on a support member having a low thermal conductivity, such as a thin polyimide film. The semiconductor temperature sensor is mounted on the temperature-sensitive surface side by flip-chip bonding and is not packaged and is not sealed, and the back surface of the semiconductor temperature sensor is exposed.

本発明に係る半導体温度センサ装置によれば、パッケージ化せず、非封止状態としたので、半導体温度センサの適用範囲が拡大し、また、熱伝導性の低い支持部材上に半導体温度センサをフリップチップボンディングにより実装するので、熱の流入、流出が少なくなって熱応答性が向上するとともに、露出した裏面で半導体温度センサ自体を非測定物に直接接触させることにより、熱応答性がより一層向上して、半導体温度センサが有する本来の優れた機能を十分に発揮できるという効果を奏する。 According to the semiconductor temperature sensor device of the present invention, since it is not packaged and is in an unsealed state, the application range of the semiconductor temperature sensor is expanded, and the semiconductor temperature sensor is mounted on a support member having low thermal conductivity. Mounting by flip-chip bonding improves heat responsiveness by reducing heat inflow and outflow, and further improves thermal responsiveness by bringing the semiconductor temperature sensor itself into direct contact with non-measured objects on the exposed back surface. This improves the original excellent function of the semiconductor temperature sensor.

以下、本発明の好適な実施形態を、図１及び図２に示す概略的な正面図に基づいて説明する。図１に示すように、半導体温度センサ装置１は、熱伝導性が低い支持部材として、薄い、例えば厚さ２５μｍ程度のポリイミドフィルム２を採用し、このポリイミドフィルム２上に、チップ状の半導体温度センサ３をその感温面３ａ側において、フリップチップボンディングにより実装したものである。また、図１中、４は電気的接合材で、薄い、例えば厚さ１７μｍ程度の銅箔であり、５はエポキシ樹脂系接着剤からなるアンダーフィルである。 DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, a preferred embodiment of the invention will be described with reference to schematic front views shown in FIGS. As shown in FIG. 1, the semiconductor temperature sensor device 1 employs a thin polyimide film 2 having a thickness of, for example, about 25 μm as a supporting member having low thermal conductivity, and a chip-like semiconductor temperature is formed on the polyimide film 2. The sensor 3 is mounted on the temperature-sensitive surface 3a side by flip chip bonding. In FIG. 1, 4 is an electrical bonding material, which is a thin copper foil having a thickness of, for example, about 17 μm, and 5 is an underfill made of an epoxy resin adhesive.

チップ状の半導体温度センサ３は、液状樹脂を塗布する等によるパッケージ化を行わずに、非封止状態にあるので、いわゆるベアチップとなっている。そして、フリップチップボンディングにより実装したので、前記半導体温度センサ３の感温面３ａと反対側、すなわち絶縁シリコン裏面３ｂは露出状態にある。一方、前記感温面３ａは、アンダーフィル５によって保護された状態にある。 The chip-shaped semiconductor temperature sensor 3 is a so-called bare chip because it is in an unsealed state without being packaged by applying a liquid resin or the like. And since it mounted by flip chip bonding, the opposite side to the temperature sensitive surface 3a of the said semiconductor temperature sensor 3, ie, the insulated silicon back surface 3b, is an exposed state. On the other hand, the temperature sensitive surface 3 a is in a state protected by the underfill 5.

上述のように構成した半導体温度センサ装置１は、図２に示すように、半導体温度センサ３の露出した裏面３ｂを、温度の測定対象である被測定物６に直接接触させて、測定することができる。このため、熱応答がよくなる。また、ポリイミドフィルム２の熱伝導性が低いので、半導体温度センサ３の低熱容量と相まって、熱の流入、流出が少ないため、高速熱応答化が可能となるとともに、高精度の測定が可能となる。また、絶縁シリコン裏面３ｂが露出しているので、通常必要な絶縁が不要となる。 As shown in FIG. 2, the semiconductor temperature sensor device 1 configured as described above performs measurement by directly contacting the exposed back surface 3 b of the semiconductor temperature sensor 3 with the object 6 to be measured. Can do. For this reason, the thermal response is improved. In addition, since the thermal conductivity of the polyimide film 2 is low, the heat inflow and outflow are small in combination with the low heat capacity of the semiconductor temperature sensor 3, so that high-speed thermal response is possible and high-precision measurement is possible. . Further, since the insulating silicon back surface 3b is exposed, normally necessary insulation is not required.

半導体温度センサ装置の概略的な正面図。The schematic front view of a semiconductor temperature sensor apparatus. 同装置の測定状態を示す概略的な正面図。The schematic front view which shows the measurement state of the apparatus.

Explanation of symbols

１半導体温度センサ装置
２ポリイミドフィルム
３半導体温度センサ
３ａ感温面
３ｂ裏面
４電気的接合材
５アンダーフィル
６被測定物
DESCRIPTION OF SYMBOLS 1 Semiconductor temperature sensor apparatus 2 Polyimide film 3 Semiconductor temperature sensor 3a Temperature sensitive surface 3b Back surface 4 Electrical joining material 5 Underfill 6 Measured object

Claims

A semiconductor temperature sensor device, wherein a chip-like semiconductor temperature sensor is mounted on a supporting member having low thermal conductivity by flip chip bonding on the temperature-sensitive surface side, and is in an unsealed state.