JP2008130674A - Manufacturing method of color transformation light-emitting substance equipment using electromigration - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a color transformation light-emitting substance device, capable of preventing elements separating out due to ion migration, when a phosphor layer is made to adhere through electrophoresis. <P>SOLUTION: When two or more metal parts 4 and 5, where ion migration can occur, are located in an electromigration process, they are set at the same potential, by electrically interconnecting them or electrically connecting them to an auxiliary cathode 23 to connecting wires 24a and 24b. Since ion migration occurs, when two or more regions where the same element is used are located and a potential difference occurs between the regions, ion migration can be prevented by electrically connecting them to keep the same potential. Since fluorescent particles are migrated and accumulated on the entire metal parts which are electrically connected together, the auxiliary cathode 23 with an opening is arranged so as to enable the fluorescent particles to selectively accumulate at desired parts. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a color conversion light emitting device in which a phosphor layer for converting a light emission color is provided on the surface of a light emitting element.

  There is known an optical device that converts part of blue light emitted from a light emitting diode (LED) into red light and green light by a phosphor and emits white light in which three colors of blue, red, and green are mixed. As a structure of such an optical device, for example, a structure in which a blue LED chip is disposed inside a light-reflective cup and a space in the cup around the LED chip is filled with a phosphor is known. Yes.

Patent Document 1 discloses that a phosphor layer having a uniform thickness using electrophoresis in order to reduce the occurrence of uneven color in the emission color due to uneven thickness of the phosphor layer disposed around the LED chip. A technique for adhering to the LED chip surface is disclosed. In the electrophoresis process, aluminum nitride serving as phosphor particles, a charging agent and a binder is added to and dispersed in a solution mainly composed of isopropyl alcohol and water, and the LED chip and its supporting member (submount) are dispersed in this solution. ) As a cathode, and an electric field is applied between the cathode and the anode disposed oppositely. The phosphor particles positively charged by the electric resistance agent are electrophoresed toward the cathode when an electric field is applied, and are deposited on the conductive portion of the LED chip surface to form a phosphor layer.
JP 2003-69086 A

  As described above, in the electrophoresis step, the LED chip and its support member are immersed in a solution and a voltage is applied. For this reason, the elements on the LED chip and its supporting member may be eluted by ion migration under predetermined conditions. The conditions under which ion migration occurs are that there are two or more regions using the same element among Ag, Pb, Cu, Sn, and Ni known as elements that are likely to cause ion migration in the LED and its supporting substrate, This is the case where there is a potential difference between the regions. When these conditions are met, an ion migration phenomenon occurs in which the above elements are eluted as ions from the high potential region, and the eluted ions move to a region having a lower potential than that region and precipitate. Among the above elements, it is known that particularly Ag tends to cause ion migration.

  Since the element is conductive, if it is deposited between adjacent electrode patterns, it causes an electrical short circuit and causes a decrease in reliability. Moreover, since the eluted ions have a positive charge like the phosphor particles, they are electrophoresed and may be deposited on the surface of a lower potential LED chip. Since the deposited element is a fine particle having a particle size smaller than the visible light wavelength, it becomes a black light absorption point in the phosphor layer, resulting in a decrease in luminous intensity of the LED device.

  An object of the present invention is to provide a method of manufacturing a color conversion light-emitting device capable of preventing element precipitation due to ion migration when a phosphor layer is attached by electrophoresis.

  In order to achieve the above object, in the present invention, when there are two or more metal parts that can cause ion migration in the electrophoresis step, they are electrically connected to each other or to a ground potential electrode or the like. To be the same potential. Ion migration occurs when there are two or more regions using the same element and there is a potential difference between the regions. Therefore, ion migration can be prevented by connecting them to the same potential. In addition, since the phosphor particles migrate and deposit on the entire surface of the connected metal part, an auxiliary cathode having an opening is disposed so that the phosphor particles are selectively deposited on a desired part.

  Specifically, according to the first aspect of the present invention, the following method for manufacturing a color conversion light emitting device is provided. That is, the step of disposing the phosphor device on which the semiconductor light emitting element is mounted and the anode in the solution in which the phosphor particles are dispersed, and the predetermined plurality of conductive portions of the phosphor device to have the same potential, The step of connecting the plurality of conductive portions and the direct current between the anode and the light emitter device so that the potential of the portion of the semiconductor light emitting element where the phosphor particles are to be deposited are lower than the anode potential. A step of applying a voltage to move the phosphor particles in the solution to the semiconductor light emitting device and attaching the phosphor particles to the surface of the semiconductor light emitting device, and a step of cutting the connection of the plurality of conductive portions. It is a manufacturing method of a color conversion light-emitting device. In this way, by connecting a plurality of predetermined conductive portions to the same potential by connection, even if these conductive portions contain the same element of any of Ag, Pb, Cu, Sn, Ni, ions The occurrence of migration can be suppressed.

  Further, an auxiliary cathode is disposed between the light emitting device and the anode, and a plurality of predetermined conductive portions are connected via the auxiliary cathode, so that the auxiliary cathode and the predetermined plurality of conductive portions have the same potential. It is also possible. By providing the auxiliary cathode with an opening at a position facing the semiconductor light emitting element, the phosphor particles that have passed through the opening can be selectively deposited on the semiconductor light emitting element. As a result, the auxiliary cathode acts as a mask, and it is possible to prevent the phosphor particles from being deposited at undesired locations.

  In the case where a conductive layer is disposed in a portion where the phosphor particles of the semiconductor light emitting element are to be deposited, it is possible to connect the conductive layer to a plurality of predetermined conductive portions so as to have the same potential. Thereby, even if it is a case where the element which tends to produce ion migration is contained in a conductive layer, a phosphor layer can be deposited on it, suppressing ion migration.

  When the light emitting device includes a reflecting member having a metal layer on the surface, the metal layer of the reflecting member can be connected to a plurality of other conductive portions to have the same potential. Thereby, even if it is a case where the element which is easy to produce ion migration, such as Ag, is contained in the metal layer of a reflection member, ion migration can be suppressed.

  A method of manufacturing a color conversion light emitting device according to an embodiment of the present invention will be described with reference to the drawings.

  First, the structure of the color conversion light emitting device manufactured in the present embodiment will be described with reference to FIG. The color conversion light-emitting device of FIG. 1 has a configuration in which a blue LED chip (die) 2 based on GaN is mounted on a support member 3, and the blue LED chip 2 is covered with a phosphor layer 7.

  The support member 3 includes a p-type contact extraction electrode 4 and an n-type contact extraction electrode 5 on the surface of the insulating substrate 3a. The LED chip 2 is a known blue LED, which is not shown, but is laminated in order from the support member 3 side, and has a low electrical resistance p-type contact layer, p-type cladding layer, active layer, n-type cladding layer, And a low electrical resistance n-type contact layer. A surface electrode serving as a bonding pad is disposed on the n-type contact layer. The p-type contact layer which is the lowermost surface of the LED chip 2 is die-bonded on the p-type contact extraction electrode 4 of the support member 3 with a solder material or the like. On the other hand, the surface electrode of the LED chip 2 is connected to the n-type contact extraction electrode 5 by a bonding wire 6.

  The phosphor layer 7 covering the blue LED chip 2 is a layer of particles of YAG (yttrium, aluminum, garnet) phosphor.

  In the color conversion light emitting device of FIG. 1, when a current is passed from the p-type contact extraction electrode 4 and the n-type contact extraction electrode 5 to the LED chip 2, blue light is generated from the LED chip 2. The phosphor layer 7 absorbs a part of the blue light and emits fluorescence that has been converted to yellow. Accordingly, white light obtained by mixing yellow light and blue light is emitted from the color conversion light emitting device.

Next, an outline of a method for manufacturing the color conversion light emitting device of the present embodiment will be described.
First, the LED chip 2 manufactured in advance is die-bonded onto the p-type contact extraction electrode 4 of the support member using a solder material or the like, and then the surface electrode of the LED chip 2 and the n-type contact extraction electrode 5 are connected to the wire 6. Bonding with Thereby, the LED package 1 in which the LED chip 1 is mounted on the support member 3 is obtained. In addition, since the manufacturing method of LED chip 2 and the supporting member 3 is widely known, description is abbreviate | omitted here.

  Next, the phosphor layer 7 is formed on the surface of the LED chip 2 of the LED package 1 using electrophoresis. Electrophoresis is basically a phenomenon in which a potential difference is applied between two electrodes (anode and cathode) and a “charged substance” existing between both electrodes is moved by an electric field. By using electrophoresis, it is possible to deposit a “substance having a charge” on an electrode having a polarity opposite to the charge of the “substance having a charge”. (Hereinafter, this process is referred to as an electrophoretic electrodeposition process or simply an electrodeposition process.) In this embodiment, an aqueous solution in which phosphor particles to which charges are added is dispersed is prepared, the LED package 1 is used as a cathode, and an anode So as to oppose the electrode and apply a voltage between the cathode and anode. The phosphor particles imparted with a positive charge move to and deposit on the conductive region on the surface of the LED package 1 by electrophoresis.

When the LED package 1 of FIG. 1 is used as a cathode as it is, the LED package 1 has a plurality of metal portions such as extraction electrodes 4 and 5, a surface electrode of the LED chip 2, a solder material for die bonding, etc. In the metal part, a potential is applied to the metal part other than the part directly connected to the power source due to the conductivity of the solution. The potentials of these metal portions are not equipotential due to the structure of the LED chip die 2. For example, when the p-type contact extraction electrode is connected to the power source negative electrode, the potential of the metal component of the LED package 1 is
n-type contact extraction electrode 5 ≧ die bonding solder> LED chip die 2 surface> p-type contact extraction electrode 4
It becomes in order. In the LED package 1, the surface electrode of the LED chip die 2, the die bonding solder material, the extraction electrodes 4 and 5 formed on the support member 3, etc. contain one element of Ag, Pb, Cu, Sn, Ni. Can be configured. Therefore, when two or more regions containing the same element among these elements are included, a potential difference occurs, ion migration occurs in the aqueous solution, and cations are eluted in the solution.

  In the present embodiment, the plurality of metal portions of the LED package 1 are connected in advance to each other or to ground potential electrodes so that the plurality of metal portions have the same potential in the solution of the electrodeposition process. A plurality of metal parts having the same potential do not cause ion migration even if they contain the same element of Ag, Pb, Cu, Sn, and Ni, so that these are formed on the phosphor layer on the surface of the LED chip die 2. It is possible to prevent the element from precipitating and becoming a light absorption point, or precipitating at the electrode part and lowering the electrical reliability. These connections are temporary during the electrodeposition process, and are cut or removed after electrodeposition.

  Further, since the phosphor particles migrate and deposit on the entire connected metal portion, an auxiliary cathode having an opening is disposed so that the phosphor particles are selectively deposited on the surface of the LED chip 2.

  Hereinafter, the electrodeposition process of the present invention will be described in more detail with reference to first to third embodiments.

(First embodiment)
As a first embodiment, an electrodeposition process for forming phosphor particles on the LED package 1 that includes an element that easily causes ion migration and is included in the electrodes 4 and 5 will be described with reference to FIGS.

  The apparatus shown in FIG. 2 is an electrodeposition apparatus by electrophoresis, and the deposition treatment tank 20 is filled with a solution 21 in which phosphor (YAG) particles are dispersed, and an anode (platinum) 22 is disposed at the bottom thereof. Has been. The LED package 1 is disposed on the top of the solution 21 as a cathode so as to face the anode 22.

  An auxiliary cathode 23 is disposed between the LED package 1 serving as a cathode and the anode 22. The auxiliary cathode 23 has an opening 43 at a position facing the LED chip die 2 in order to selectively attach phosphor particles to the surface of the LED chip die 2. The shape of the opening 43 corresponds to the shape of the upper surface of the LED chip die 2. As a material constituting the auxiliary cathode 23, it is desirable to use a conductive base material that does not elute by an electrochemical reaction during the electrodeposition process. That is, it is possible to use a conductive material not containing Ag, Pb, Cu, Sn, or Ni that easily causes ion migration, for example, a metal material such as Pt or SUS, a carbon material, or the like.

  The p-type contact extraction electrode 4 of the LED package 1 is connected to the negative electrode (ground potential) of the DC power supply 26 by the wiring 24a. The n-type contact extraction electrode 5 is connected to the auxiliary cathode 23 by the wiring 24b. The auxiliary cathode 23 is connected to the negative electrode of the power supply 26 by the wiring 27. Therefore, the extraction electrodes 4 and 5 and the auxiliary cathode 23 are all at the ground potential. On the other hand, the anode 22 is connected to the positive electrode of the DC power supply 26 by the wiring 25.

  The distance between the auxiliary cathode 23 and the LED package 1 is set within, for example, 2 mm so that the phosphor particles can be selectively attached to the surface of the LED chip die 2 through the opening 43 of the auxiliary cathode 23.

The solution 21 is made by dispersing phosphor particles (YAG) and magnesium nitrate (Mg (NO ₃ ) ₂ ) serving as a charging agent and a binder of the phosphor particles in a solvent mainly composed of isopropyl alcohol and water. Use the same thing. For example, as the phosphor particles (YAG), a solution 21 in which 4 g / L and magnesium nitrate (Mg (NO ₃ ) ₂ ) are dispersed so as to have a concentration of 5 mmol / L can be used. The phosphor particles may have a primary particle size of several nanometers to several tens of micrometers.

  As an operation procedure of the electrodeposition process, the LED package 1 and the auxiliary cathode 23 are set in the deposition treatment tank 20 as shown in FIG. The phosphor particles in the solution 21 are given positive charges by dissolving magnesium nitrate into ions, so that the phosphor particles are directed from the anode 22 side toward the auxiliary cathode 23 and the LED package 1 as the cathode. Electrophoresed.

  A part of the phosphor particles is deposited on the auxiliary cathode 23. The other part passes through the opening 43 of the auxiliary cathode 23, reaches the LED package 1, and is deposited on the surface of the LED chip 2. Thereby, the phosphor layer 7 is formed.

  After the phosphor layer 7 is deposited, the wirings 24a and 24b are removed or cut. The LED package 1 is taken out from the deposition treatment tank 20. If the phosphor particles are deposited around the openings 43 on portions other than the surface of the LED chip die 2, they are removed by wiping or blowing away the phosphor particles. Through the above steps, the color conversion light emitting device of FIG. 1 in which the phosphor layer 7 having a uniform thickness is formed on the surface of the LED chip die 2 can be obtained.

  In the electrodeposition process, the extraction electrodes 4 and 5 on the LED package 1 are connected to the negative electrode of the power supply 26 or the auxiliary cathode 23 and thus have the same potential (ground potential). For this reason, even if the same elements (for example, Ag) of Ag, Pb, Cu, Sn, and Ni that easily cause ion migration are included in the extraction electrodes 4 and 5, ion migration does not occur. Thereby, precipitation of Ag fine particles on the surface of the LED chip die 2 on which the phosphor is to be deposited can be prevented, and as a result, the phosphor layer 7 on the surface of the chip die 2 can be prevented from being blackened.

  Further, since the extraction electrodes 4 and 5 are at the ground potential, the phosphor particles are attracted to the extraction electrodes 4 and 5 by electrophoresis. In the present embodiment, the auxiliary cathode 23 covers the extraction electrodes 4 and 5. Since it is arranged, the auxiliary cathode 23 acts as a mask and can be selectively deposited on the surface of the LED chip 2.

  In the present embodiment, as shown in FIG. 2, the LED package 1 is disposed opposite to the anode 22, but the present invention is not limited to this, and the main plane of the LED chip die 2 package 1 is the anode. It is also possible to rotate the LED package 1 with respect to the anode 22 in order to arrange it perpendicularly to 22 or to reduce thickness unevenness of the phosphor layer 7 to be deposited.

(Second Embodiment)
FIG. 2 shows an electrodeposition process in the case where an LED package 1 having a reflective ring is used as the second embodiment and an element that easily causes ion migration is used not only in the extraction electrodes 4 and 5 but also in the reflective ring. 4 will be described.

  As shown in FIG. 4, the LED package 1 includes a reflective ring 8 around the LED chip die 2. The reflection ring 8 is a mirror that reflects the light emitted from the LED chip die 2 toward the upper side of the LED chip die 2, and is disposed so as to surround the LED chip die 2. By disposing the reflection ring 8, light with high directivity can be emitted toward the normal direction (upward) of the main plane of the LED package 1.

  The reflection ring 8 includes a metal layer that increases the reflectivity on the inner wall surface, and this metal layer is structurally not electrically connected to the electrodes 4 and 5 of the support portion 3 and the LED chip die 2. When immersed in 21, they are electrically connected to each other via the solution 21. For this reason, when the metal layer of the reflective ring 8 contains an element (for example, Ag) that easily causes ion migration such as Ag, Pb, Cu, Sn, and Ni, it can be a source of ions. Therefore, in this embodiment, as shown in FIG. 4, the Ag layer of the reflection ring 8 is connected to the n-type contact extraction electrode 5 by the wiring 41. The extraction electrode 5 is connected to the auxiliary cathode 23 through the wiring 24b as in the first embodiment. The extraction electrode 4 and the auxiliary cathode 27 are also connected to the negative electrode of the power supply 26 via the wiring 24a and the wiring 27, as in the first embodiment.

  As a result, all of the extraction electrodes 4 and 5 and the metal layer of the reflection ring can be dropped together with the auxiliary cathode 23 to the ground potential. Since the extraction electrodes 4 and 5 and the metal layer of the reflection ring have the same potential, even if an element that easily causes ion migration is included, ion migration does not occur.

  Other configurations and work procedures are the same as those in the first embodiment, and the phosphor particles pass through the opening 43 of the auxiliary cathode 23 and are deposited on the upper surface of the chip die 2 of the LED package 1.

  Note that the connection method of the extraction electrodes 4 and 5, the reflection ring 9, and the auxiliary cathode 23 is not limited to the configuration of FIG. 4, and any connection may be used as long as they have the same potential. For example, the reflective ring 8 and the auxiliary cathode 23 are connected, the reflective ring 8 and the p-type contact extraction electrode 4 are connected, or the reflective ring 8 and the n-type contact extraction electrode are connected to the auxiliary cathode 23, respectively. It is possible to take this method.

(Third embodiment)
As a third embodiment, a case will be described in which an LED package 1 is used in which an LED chip die 2 includes both an n-type electrode and a p-type electrode on the lower surface of the chip die 2 as shown in FIG. As shown in FIG. 6, the p-type electrode and the n-type electrode are electrically and mechanically joined to the p-type contact take-out electrode 4 and the n-type contact take-out electrode 5 by contact electrodes 61 and 62, respectively.

  When the surface of the LED chip die 2 is made of a non-conductive material (for example, a sapphire substrate), a conductive layer 71 is disposed in order to provide conductivity necessary as a cathode for electrophoresis.

  The contact electrodes 61 and 62 and the conductive layer 71 contain an element that easily causes ion migration. Specifically, the contact electrodes 61 and 62 are made of an Au—Sn compound, and the conductive layer 71 is made of an antimony-tin oxide compound containing Sn. The conductive layer 71 can be formed by applying or spraying a suspension of fine particles such as an antimony-tin oxide compound.

  The electrodeposition process of 3rd Embodiment is demonstrated using FIG. As shown in FIG. 6, the electrodeposition apparatus is the same as in the first and second embodiments, but the conductive layer 71 on the surface of the chip die 2 is connected to the n-type contact extraction electrode 5 by the wiring 72. Further, the n-type contact extraction electrode 5 is connected to the auxiliary cathode 23 by a wiring 24b. The p-type contact extraction electrode 4 and the auxiliary cathode 23 are connected to the negative electrode of the power supply 26 by wirings 24a and 27, respectively.

  Thereby, all the extraction electrodes 4 and 5 and the conductive layer 71 can be dropped to the ground potential together with the auxiliary cathode 23. Since the extraction electrodes 4 and 5 and the conductive layer 71 have the same potential, even if a metal that easily causes ion migration is included, ion migration does not occur.

  Other configurations and work procedures are the same as those in the first embodiment. The phosphor particles pass through the opening 43 of the auxiliary cathode 23 and are deposited on the upper surface of the conductive layer 71 of the chip die 2.

  In addition, the connection method of the extraction electrodes 4 and 5 and the conductive layer 71 is not limited to the configuration of FIG. 6 and any connection may be used as long as they have the same potential. For example, various connection methods such as connecting the conductive layer 71 and the p-type contact extraction electrode 4 can be used.

(Fourth embodiment)
The LED package 1 of the fourth embodiment has the same configuration as the LED package 1 of the third embodiment, but further includes a reflection ring 9 having the same configuration as that of the second embodiment. .

  The contact electrodes 61 and 62, the conductive layer 71, and the metal layer of the reflection ring 9 contain an element that easily causes ion migration. Specifically, the contact electrodes 61 and 62 are made of an Au—Sn compound, the conductive layer 71 is an antimony-tin oxide compound containing Sn, and the metal layer of the reflective ring 9 is an Ag layer.

  Therefore, in the electrodeposition process of the fourth embodiment, as shown in FIG. 7, the conductive layer 71 on the surface of the chip die 2 is connected to the metal layer of the reflection ring 9 by the wiring 91. The metal layer of the reflection ring 9 is connected to the n-type contact extraction electrode 5 by the wiring 41. The n-type contact extraction electrode 5 is connected to the auxiliary cathode 23 by a wiring 24b. The p-type contact extraction electrode 4 and the auxiliary cathode 23 are connected to the negative electrode of the power supply 26 by wirings 24a and 27, respectively.

  Thereby, the extraction electrodes 4, 5, the conductive layer 71, and the reflection ring 9 can all be dropped to the ground potential together with the auxiliary cathode 23. Therefore, even if they contain a metal that easily causes ion migration, ion migration does not occur. Other configurations and work procedures are the same as those in the first embodiment. The phosphor particles pass through the opening 43 of the auxiliary cathode 23 and are deposited on the upper surface of the conductive layer 71 of the chip die 2.

  In addition, the connection method of the extraction electrodes 4 and 5 and the conductive layer 71 is not limited to the configuration of FIG. 6 and any connection may be used as long as they have the same potential.

  As described above, according to each embodiment of the present invention, even when an element that easily causes ion migration is included in a plurality of metal portions of the LED package, wiring is temporarily performed during the electrodeposition process. By doing so, the occurrence of ion migration can be suppressed. Thereby, since these elements do not precipitate between the phosphor layers and the electrodes due to ion migration, it is possible to manufacture a color conversion light emitting device having high luminous intensity and high electrode reliability. In addition, a phosphor layer can be formed in a desired region by using an auxiliary cathode having an opening.

  In the electrodeposition process of the present embodiment, the phosphor layer is formed by setting one LED package 1 on which the LED chip 2 is mounted in a processing tank. However, the present invention is a plurality of continuous LED packages. 1 may be set in the treatment tank to form a phosphor layer.

  When a plurality of continuous LED packages are set in the processing tank, a step of individually separating the plurality of LED packages after forming the phosphor layer is required. Further, by continuously forming the take-out electrodes of the adjacent LED packages, it can be configured in a state of being connected between the take-out electrodes in the phosphor attaching step. Furthermore, in the separation step, the connection electrode can be cut along with the separation step by designing the extraction electrode pattern on the support member so that the extraction electrodes of adjacent LED packages are cut.

  In addition, regarding the connection between the extraction electrode and the reflection member, not only the connection by the conductive wire, but also a plating pattern continuous with the extraction electrode is provided on the support member, and the reflection member is mounted on this, whereby the extraction is performed by the plating pattern. The electrode and the reflection member (conductive portion thereof) may be connected (connected). After the phosphor attaching step, the connection can be cut by removing the plating pattern by laser irradiation.

  In the embodiment described above, the auxiliary cathode 23 is used and the phosphor layer is selectively deposited on the LED chip 2. However, the phosphor layer can be deposited without using the auxiliary cathode 23. is there. Even in this case, the effect of preventing ion migration can be obtained by setting the plurality of metal regions of the LED package 1 to the same potential. However, when the auxiliary cathode 23 is not used, the phosphor layer adheres to the entire conductive region such as a metal region having the same potential of the LED package 1, and therefore it is necessary to perform a step of removing the phosphor layer in unnecessary regions. There is.

  In each of the above embodiments, a plurality of metal regions including an element that easily causes ion migration is dropped to the ground potential. However, the same potential is sufficient for suppressing ion migration. Therefore, other potentials lower than the anode potential can be used.

  The conductive portion that can cause ion migration is not limited to the above-described embodiment, and the LED chip electrode, the conductive layer provided on the surface of the LED chip, the LED, depending on the configuration of the LED chip or LED package. A metal layer formed in the chip, a wiring part and a reflection part formed on the support member, a bonding material for bonding the LED chip and the support member, a reflection member formed on the support member, and the like are conceivable. For example, Ag, Ni, Cu is used as one layer of the base material or the laminated structure, and Sn, Pb, etc. are used as the solder material. Here, the conductive portion containing Ag, Pb, Cu, Sn, and Ni is configured not only as the outermost surface of the LED package but also as one layer (not the outermost surface) in the underlayer or the laminated structure. Even if it is a case where it is carried out, since it can become a cause of generation | occurrence | production of ion migration through a pinhole, ion migration can be prevented by the electrodeposition process using the connection of this invention.

Sectional drawing of the color conversion light-emitting body apparatus manufactured in 1st and 2nd embodiment. Explanatory drawing of the electrodeposition apparatus which performs the electrodeposition process of 1st Embodiment. The perspective view which shows the positional relationship of the anode 22, the auxiliary cathode 23, and the LED package 1 of the electrodeposition apparatus of 1st Embodiment. Explanatory drawing of the electrodeposition apparatus which performs the electrodeposition process of 2nd Embodiment. Sectional drawing of the light-emitting body apparatus manufactured in 3rd Embodiment. Explanatory drawing of the electrodeposition apparatus which performs the electrodeposition process of 3rd Embodiment. Explanatory drawing of the electrodeposition apparatus which performs the electrodeposition process of 4th Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... LED package, 2 ... LED chip (die), 3 ... Supporting member, 3a ... Insulating substrate, 4 ... P-type contact extraction electrode 4, 5 ... N-type contact extraction electrode, 6 ... Bonding wire, 7 ... Fluorescence Body layer, 20 ... deposition treatment tank, 21 ... solution, 22 ... anode, 23 ... auxiliary cathode, 24a, 24b ... wiring, 25 ... wiring, 41 ... wiring, 44 ... opening, 72 ... wiring, 91 ... wiring.

Claims (6)

A step of disposing a phosphor device mounted with a semiconductor light emitting element and an anode in a solution in which phosphor particles are dispersed;
Connecting the plurality of conductive portions in order to bring the predetermined plurality of conductive portions of the light emitter device to the same potential;
A direct current voltage is applied between the anode and the light emitter device so that the potential of the portion where the phosphor particles of the semiconductor light emitting element are to be deposited is lower than the anode potential. Moving the phosphor particles to the semiconductor light emitting device and attaching the phosphor particles to the surface of the semiconductor light emitting device;
Cutting the connection of the plurality of conductive portions. A method for manufacturing a color conversion light emitting device.   The color conversion light emitting device manufacturing method according to claim 1, wherein the predetermined plurality of conductive portions include the same element of any one of Ag, Pb, Cu, Sn, and Ni. Method for manufacturing a light emitter device.   2. The method of manufacturing a color conversion light emitting device according to claim 1, wherein an auxiliary cathode is disposed between the light emitting device and the anode, and the plurality of predetermined conductive portions are connected via the auxiliary cathode. A method of manufacturing a color conversion light emitting device characterized by the above.   4. The method of manufacturing a color conversion light emitting device according to claim 3, wherein the auxiliary cathode has an opening at a position facing the semiconductor light emitting element, and selectively emits phosphor particles that have passed through the opening. A method of manufacturing a color conversion light-emitting device characterized by being deposited on an element.   5. The method of manufacturing a color conversion light-emitting device according to claim 1, wherein a conductive layer is disposed on a portion of the semiconductor light-emitting element on which phosphor particles are to be deposited, and the conductive layer is disposed on the conductive layer. A method of manufacturing a color conversion light-emitting device, wherein the plurality of predetermined conductive portions are connected to have the same potential.   6. The method of manufacturing a color conversion light emitting device according to claim 1, wherein the light emitting device includes a reflecting member having a metal layer on a surface thereof, and the reflecting member includes the predetermined plurality of the reflecting members. A method for manufacturing a color conversion light-emitting device, characterized by being connected to a conductive portion and having the same potential.

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