JP2008123700A - Organic el display device and repairing method therefor, and manufacturing method for the organic el display device - Google Patents

Organic el display device and repairing method therefor, and manufacturing method for the organic el display device Download PDF

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JP2008123700A
JP2008123700A JP2006302771A JP2006302771A JP2008123700A JP 2008123700 A JP2008123700 A JP 2008123700A JP 2006302771 A JP2006302771 A JP 2006302771A JP 2006302771 A JP2006302771 A JP 2006302771A JP 2008123700 A JP2008123700 A JP 2008123700A
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Kohei Nagayama
耕平 永山
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Canon Inc
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<P>PROBLEM TO BE SOLVED: To provide an active-matrix type organic EL display device that can flows a current that can open destruct a defective part. <P>SOLUTION: The active-matrix type organic EL display device has a plurality of organic EL elements, respectively in which an organic light-emitting layer is sandwiched between a cathode electrode and an anode electrode. Each organic EL element is connected to each of a plurality of signal lines, each of a plurality of scanning lines, and each of a plurality of anode lines, respectively. A protrusion part is formed to the anode line, and the protruding part of the anode line and the anode electrode or an electrode, having the same potential as that of the anode electrode, are laminated across an insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は有機EL表示装置とその修復方法、及び有機EL表示装置の製造方法の技術分野に属する。   The present invention belongs to a technical field of an organic EL display device, a repair method thereof, and a method of manufacturing an organic EL display device.

有機EL表示装置は、有機発光層がアノード電極とカソード電極との間に挟まれた構造であり、アノード電極とカソード電極とがショートした場合、その部分の有機EL素子が発光しなくなるため、非点灯欠陥が発生する。   The organic EL display device has a structure in which an organic light emitting layer is sandwiched between an anode electrode and a cathode electrode. When the anode electrode and the cathode electrode are short-circuited, the organic EL element in that portion does not emit light. A lighting defect occurs.

このような非点灯欠陥の補修方法としてエージングという方法が知られている。有機EL素子の製造工程において、アノード電極とカソード電極との間に電圧を印加するエージング処理を行って膜欠陥部を予めオープン破壊させておくという方法である。   A method called aging is known as a method for repairing such non-lighting defects. In the manufacturing process of the organic EL element, an aging process is performed in which a voltage is applied between the anode electrode and the cathode electrode, so that the film defect portion is preliminarily broken open.

例えば、特許文献1や特許文献2には、アクティブマトリクス型の有機EL表示装置のエージング方法が開示されている。図4に、特許文献に開示されたピクセル部分の回路構成を示す。各ピクセルは、スイッチング用TFTと駆動用TFTと、有機発光(EL)素子と、コンデンサで構成されている。   For example, Patent Literature 1 and Patent Literature 2 disclose an aging method for an active matrix organic EL display device. FIG. 4 shows a circuit configuration of the pixel portion disclosed in the patent document. Each pixel includes a switching TFT, a driving TFT, an organic light emitting (EL) element, and a capacitor.

特開2003−51384号公報JP 2003-51384 A 特開2005−340149号公報JP 2005-340149 A

アクティブマトリクス型の有機EL表示装置は、微小電流を制御するためにポリシリコンTFTで駆動回路が構成され、駆動用TFTに流すことのできる電流は数μAである。そのため、オープン破壊に必要な電流が得られず、十分なエージング効果が得られなかった。   In an active matrix type organic EL display device, a drive circuit is constituted by a polysilicon TFT in order to control a minute current, and a current that can be supplied to the drive TFT is several μA. Therefore, a current required for open breakdown cannot be obtained, and a sufficient aging effect cannot be obtained.

そこで、本発明は上記問題に鑑み、欠陥部にオープン破壊できる電流を流すことのできるアクティブマトリクス型の有機EL表示装置とその修復方法、及び有機EL表示装置の製造方法を提供することを目的とする。   SUMMARY OF THE INVENTION In view of the above problems, the present invention has an object to provide an active matrix organic EL display device capable of passing an open breakable current to a defective portion, a repair method thereof, and a method of manufacturing the organic EL display device. To do.

上記背景技術の課題を解決するための手段として、請求項1に記載した発明に係る有機EL表示装置は、
カソード電極とアノード電極との間に有機発光層を挟んだ有機EL素子を複数有し、各々の有機EL素子は、複数の信号線、複数の走査線、及び複数のアノード線の各1本にそれぞれ接続されて成るアクティブマトリックス型の有機EL表示装置において、
アノード線に突起部が形成されており、このアノード線の突起部とアノード電極又は同アノード電極と同電位の電極とは、絶縁層を挟んで積層されていることを特徴とする。
As means for solving the problems of the background art, an organic EL display device according to the invention described in claim 1 is:
A plurality of organic EL elements each having an organic light emitting layer sandwiched between a cathode electrode and an anode electrode, and each organic EL element is connected to each of a plurality of signal lines, a plurality of scanning lines, and a plurality of anode lines. In an active matrix type organic EL display device connected to each other,
A protrusion is formed on the anode line, and the protrusion of the anode line and the anode electrode or an electrode having the same potential as the anode electrode are stacked with an insulating layer interposed therebetween.

本発明によれば、アノード線に形成された突起部とアノード電極又は同アノード電極と同電位の電極とを、絶縁層を挟んで積層している。この積層部分にレーザー照射し、アノード線とカソード電極とを接続する。その後、アノード電極とカソード電極との間に電圧印加して欠陥部をエージングしてオープン破壊すると、駆動TFTを介さずに有機EL素子に電流が流れる。そのため、駆動TFTの特性に制限されること無く電流を流すことができ、欠陥部を確実にオープン破壊することができる。   According to the present invention, the protrusion formed on the anode line and the anode electrode or the electrode having the same potential as the anode electrode are stacked with the insulating layer interposed therebetween. The laminated portion is irradiated with laser to connect the anode line and the cathode electrode. Thereafter, when a voltage is applied between the anode electrode and the cathode electrode to age the defect portion and open break, a current flows through the organic EL element without passing through the driving TFT. Therefore, a current can be passed without being restricted by the characteristics of the driving TFT, and the defective portion can be surely broken open.

以下、本発明に係る有機EL表示装置とその修復方法、及び有機EL表示装置の製造方法の実施形態について図面を参照して説明する。なお、本実施形態で特に図示又は記載されない部分に関しては、当該技術分野の周知又は公知技術を適用する。また、本実施形態は、発明の一つの実施形態であって、これらに限定されるものではない。   Hereinafter, embodiments of an organic EL display device, a repair method thereof, and a method of manufacturing an organic EL display device according to the present invention will be described with reference to the drawings. In addition, the well-known or well-known technique of the said technical field is applied regarding the part which is not illustrated or described in particular in this embodiment. Moreover, this embodiment is one embodiment of the invention, and is not limited thereto.

<第1の実施の形態>
先ず、本発明に係る有機EL表示装置の構成を製造方法に沿って説明する。
<First Embodiment>
First, the structure of the organic EL display device according to the present invention will be described along the manufacturing method.

ガラス基板などの絶縁性基板101上にポリシリコン層102を形成し、その上に例えばSiO2からなるゲート絶縁膜103を形成した(図2を参照)。ゲート絶縁膜103の厚さは100nm〜200nmが好ましく、駆動能力を向上させるためにTa25などの酸化物でも良い。 A polysilicon layer 102 was formed on an insulating substrate 101 such as a glass substrate, and a gate insulating film 103 made of, for example, SiO 2 was formed thereon (see FIG. 2). The thickness of the gate insulating film 103 is preferably 100 nm to 200 nm, and an oxide such as Ta 2 O 5 may be used in order to improve driving capability.

ゲート絶縁膜103上に、トランジスタのゲート電極104とアノード線105とゲート線107及びスイッチング用TFT117のゲート電極を形成するべく、例えば、Cr、MoW、Alなどの金属材料をスパッタ法により成膜し、フォトエッチング法などによりパターン形成した。このとき、アノード線105に突起部106を形成しておき、後に層間絶縁膜108を挟んでアノード接続用電極109と積層構造とされる(図1及び図2を参照)。なお、ゲート電極104、アノード線105の厚さは150nm〜350nmが好ましい。   On the gate insulating film 103, for example, a metal material such as Cr, MoW, or Al is formed by sputtering to form the gate electrode 104, the anode line 105, the gate line 107, and the gate electrode of the switching TFT 117. Then, a pattern was formed by a photoetching method or the like. At this time, the protrusion 106 is formed on the anode line 105, and the anode connection electrode 109 is laminated with the interlayer insulating film 108 interposed therebetween (see FIGS. 1 and 2). Note that the thickness of the gate electrode 104 and the anode line 105 is preferably 150 nm to 350 nm.

これらを覆うようにSiO2などからなる層間絶縁膜108を形成し、その上に、信号線110とアノード接続用電極109を形成した。その結果、アノード線105の突起部106は、層間絶縁膜108を挟んでアノード接続用電極109と積層構造となる。なお、欠陥画素の修復工程時に、この部分をレーザー照射によって、アノード線105の突起部106とアノード接続用電極109とを接続させるために、積層部のサイズは5μm×5μm以上で、層間絶縁膜108の厚さとしては600nm以下が好ましい。 An interlayer insulating film 108 made of SiO 2 or the like was formed so as to cover them, and a signal line 110 and an anode connection electrode 109 were formed thereon. As a result, the protrusion 106 of the anode line 105 has a laminated structure with the anode connection electrode 109 with the interlayer insulating film 108 interposed therebetween. In the repair process of the defective pixel, in order to connect the protrusion 106 of the anode line 105 and the anode connection electrode 109 by laser irradiation at this portion, the size of the stacked portion is 5 μm × 5 μm or more, and the interlayer insulating film The thickness of 108 is preferably 600 nm or less.

ちなみに、上記工程でおいて信号線110はトランジスタのソース電極とスルーホールを介して接続される。信号線110の材料としては、Cr、MoW、AlまたはMo/Al/Moなどの積層膜が用いられ、配線抵抗を低くするために厚さは300nm〜800nmが好ましい。   Incidentally, in the above process, the signal line 110 is connected to the source electrode of the transistor through a through hole. As the material of the signal line 110, a laminated film such as Cr, MoW, Al or Mo / Al / Mo is used, and the thickness is preferably 300 nm to 800 nm in order to reduce the wiring resistance.

トランジスタや配線の凹凸を緩和するためにアクリル樹脂等の平坦化膜111をスピンコート法などにより基板上に形成し、後にアノード電極113とアノード接続用電極109とを接続するためのスルーホール112を形成した。十分な平坦性を得るためには平坦化膜111の厚さは1μm〜3μmが好ましい。   A planarizing film 111 such as an acrylic resin is formed on the substrate by a spin coat method or the like in order to alleviate the unevenness of the transistors and wirings, and a through hole 112 for connecting the anode electrode 113 and the anode connection electrode 109 later is formed. Formed. In order to obtain sufficient flatness, the thickness of the planarizing film 111 is preferably 1 μm to 3 μm.

平坦化膜111上にアノード電極113を形成し、スルーホール112を介してアノード接続用電極109と接続した。アノード電極113は、光反射性の部材であることが好ましく、例えばCr、Al、Ag、Au、Pt等の材料からなることが好ましい。反射率が高い部材であるほど、光取り出し効率を向上できるからである。   An anode electrode 113 was formed on the planarizing film 111 and connected to the anode connection electrode 109 through the through hole 112. The anode electrode 113 is preferably a light-reflective member, and is preferably made of a material such as Cr, Al, Ag, Au, or Pt. This is because the higher the reflectance, the higher the light extraction efficiency.

スルーホール112及びアノード電極113のエッジを覆うように素子分離膜114を形成した。   An element isolation film 114 was formed so as to cover the through hole 112 and the edge of the anode electrode 113.

このような基板に対して、公知の手段により、有機発光層115、カソード電極116を積層して各々の画素領域に有機EL素子を作製し、有機EL表示装置を得た。   The organic light emitting layer 115 and the cathode electrode 116 were laminated on such a substrate by a known means to produce an organic EL element in each pixel region, thereby obtaining an organic EL display device.

有機発光層115は、複数の層であってもよく、例えば正孔輸送層、発光層、電子輸送層の積層であってもよいし、正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層の積層であってもよい。   The organic light emitting layer 115 may be a plurality of layers, for example, a stacked layer of a hole transport layer, a light emitting layer, and an electron transport layer, or a hole injection layer, a hole transport layer, a light emitting layer, and an electron. It may be a laminate of a transport layer and an electron injection layer.

カソード電極116は、光透過性の部材であることが好ましく、例えばITO、IZO等の透明導電材料からなることが好ましい。また、半透過性の反射部材を用いてもよく、この場合には例えば、厚さ1nm〜60nm程度の金属膜であることが好ましい。   The cathode electrode 116 is preferably a light-transmitting member, and is preferably made of a transparent conductive material such as ITO or IZO. Moreover, a semi-transmissive reflective member may be used. In this case, for example, a metal film having a thickness of about 1 nm to 60 nm is preferable.

なお、本発明において、光取り出し方向は下部電極側あるいは上部電極側のどちらであってもよい。下部電極側から光を取り出す場合には、上記の説明とは逆に下部電極が光透過性の部材であることが好ましく、上部電極が光反射性の部材であることが好ましい。   In the present invention, the light extraction direction may be either the lower electrode side or the upper electrode side. In the case where light is extracted from the lower electrode side, the lower electrode is preferably a light transmissive member, and the upper electrode is preferably a light reflective member, contrary to the above description.

続いて、上記構成の有機EL表示装置の修復方法を説明する。   Next, a method for repairing the organic EL display device having the above configuration will be described.

先ず、上記構成の有機EL表示装置を全面点灯させて、非発光画素を検知する。次に、検知した画素のアノード線105の突起部106とアノード接続用電極109との積層部にレーザーを照射する(図3(a)を参照)。レーザーのパワーが十分大きい場合には、金属が融解し、層間絶縁膜108が破壊され、前記アノード線105の突起部106とアノード接続用電極109とが接続される(図3(b)を参照)。すると、アノード電極113とアノード線105とが駆動用TFT118を介さず直結されるため、アノード線105とカソード電極116との間に電圧を印加すれば、欠陥画素に十分な電流を流すことができる。そこで、欠陥部のオープン破壊に必要な電流を流し、欠陥画素を修復する。有機EL素子が直接駆動されるので、任意の電圧、電流、及び波形を印加することができ、効率的に欠陥画素の修復を行うことができる。   First, the entire surface of the organic EL display device having the above configuration is turned on to detect non-light emitting pixels. Next, a laser is applied to the laminated portion of the protrusion 106 of the anode line 105 and the anode connection electrode 109 of the detected pixel (see FIG. 3A). When the laser power is sufficiently high, the metal melts, the interlayer insulating film 108 is destroyed, and the protrusion 106 of the anode line 105 and the anode connection electrode 109 are connected (see FIG. 3B). ). Then, since the anode electrode 113 and the anode line 105 are directly connected without passing through the driving TFT 118, if a voltage is applied between the anode line 105 and the cathode electrode 116, a sufficient current can be supplied to the defective pixel. . Therefore, a current necessary for open breakdown of the defective portion is supplied to repair the defective pixel. Since the organic EL element is directly driven, an arbitrary voltage, current, and waveform can be applied, and defective pixels can be repaired efficiently.

次に、アノード線105と突起部106とをレーザー照射し切断する(図3(c)を参照)。すると、アノード線105とアノード電極113とが電気的に切り離され、修復した画素が正常画素と同様に動作する(図3(d)を参照)。   Next, the anode wire 105 and the protrusion 106 are cut by laser irradiation (see FIG. 3C). Then, the anode line 105 and the anode electrode 113 are electrically disconnected, and the repaired pixel operates in the same manner as a normal pixel (see FIG. 3D).

<第2の実施の形態>
第2の実施形態は、欠陥画素のオープン破壊の方法にレーザー照射を用いる場合である。図3(b)の工程において、カソード電極116とアノード線105との間に電流を流すと欠陥部が発熱する。これをサーモビューワー又は赤外線カメラで観察すると、発熱箇所を特定することができる。この発熱部にレーザーを照射して、欠陥部をオープン状態にする。
<Second Embodiment>
In the second embodiment, laser irradiation is used as a method for open destruction of defective pixels. In the step of FIG. 3B, when a current is passed between the cathode electrode 116 and the anode line 105, the defective portion generates heat. When this is observed with a thermoviewer or an infrared camera, a heat generation point can be specified. This heat generating portion is irradiated with a laser to open the defective portion.

以後、第1の実施の形態と同様に、アノード線105と突起部106とをレーザー照射し切断する(図3(c)を参照)。すると、アノード線105とアノード電極113とが電気的に切り離され、修復した画素が正常画素と同様に動作する(図3(d)を参照)。   Thereafter, similarly to the first embodiment, the anode line 105 and the protrusion 106 are cut by laser irradiation (see FIG. 3C). Then, the anode line 105 and the anode electrode 113 are electrically disconnected, and the repaired pixel operates in the same manner as a normal pixel (see FIG. 3D).

本発明に係る有機EL表示装置を示す平面模式図である。1 is a schematic plan view showing an organic EL display device according to the present invention. 図1に示すA点とB点との間の構造を表す断面模式図である。It is a cross-sectional schematic diagram showing the structure between the A point and B point shown in FIG. 本発明に係る有機EL表示装置の欠陥画素の修復工程を示す図である。It is a figure which shows the repair process of the defective pixel of the organic electroluminescence display which concerns on this invention. 画素回路の従来例を示す図である。It is a figure which shows the prior art example of a pixel circuit.

符号の説明Explanation of symbols

101 ガラス基板
102 ポリシリコン層
103 ゲート絶縁膜
104 ゲート電極
105 アノード線
106 突起部
107 ゲート線
108 層間絶縁膜
109 アノード接続用電極
110 信号線
111 平坦化膜
112 スルーホール
113 カソード電極
114 素子分離膜
115 有機発光層
116 カソード電極
117 スイッチング用TFT
118 駆動用TFT
DESCRIPTION OF SYMBOLS 101 Glass substrate 102 Polysilicon layer 103 Gate insulating film 104 Gate electrode 105 Anode line 106 Projection part 107 Gate line 108 Interlayer insulating film 109 Anode connection electrode 110 Signal line 111 Planarization film 112 Through hole 113 Cathode electrode 114 Element isolation film 115 Organic light emitting layer 116 Cathode electrode 117 Switching TFT
118 Driving TFT

Claims (4)

カソード電極とアノード電極との間に有機発光層を挟んだ有機EL素子を複数有し、各々の有機EL素子は、複数の信号線、複数の走査線、及び複数のアノード線の各1本にそれぞれ接続されて成るアクティブマトリックス型の有機EL表示装置において、
アノード線に突起部が形成されており、このアノード線の突起部とアノード電極又は同アノード電極と同電位の電極とは、絶縁層を挟んで積層されていることを特徴とする、有機EL表示装置。
A plurality of organic EL elements each having an organic light emitting layer sandwiched between a cathode electrode and an anode electrode, and each organic EL element is connected to each of a plurality of signal lines, a plurality of scanning lines, and a plurality of anode lines. In an active matrix type organic EL display device connected to each other,
A projection is formed on the anode line, and the projection of the anode line and the anode electrode or the electrode having the same potential as the anode electrode are stacked with an insulating layer interposed therebetween, and the organic EL display apparatus.
カソード電極とアノード電極との間に有機発光層を挟んだ有機EL素子を複数有し、各々の有機EL素子は、複数の信号線、複数の走査線、及び複数のアノード線の各1本にそれぞれ接続されて成り、
前記アノード線に突起部が形成されており、このアノード線の突起部とアノード電極又は同アノード電極と同電位の電極とは、絶縁層を挟んで積層されたアクティブマトリックス型の有機EL表示装置の修復方法であって、
カソード電極とアノード電極との間がショートした有機EL素子の位置を検知する工程と、
前記検知した有機EL素子のアノード線の突起部にレーザーを照射し、前記アノード線とアノード電極とを直結する工程と、
前記アノード線と前記カソード電極とに電圧を印加して欠陥部をオープン破壊させる工程と、
前記アノード線の突起部をレーザー照射により切断する工程と、
を備えることを特徴とする、有機EL表示装置の修復方法。
A plurality of organic EL elements each having an organic light emitting layer sandwiched between a cathode electrode and an anode electrode, and each organic EL element is connected to each of a plurality of signal lines, a plurality of scanning lines, and a plurality of anode lines. Each connected,
A projection is formed on the anode line, and the projection of the anode line and the anode electrode or the electrode having the same potential as the anode electrode of the active matrix type organic EL display device laminated with an insulating layer interposed therebetween A repair method,
Detecting the position of the organic EL element short-circuited between the cathode electrode and the anode electrode;
A step of irradiating a laser beam to the protruding portion of the anode line of the detected organic EL element and directly connecting the anode line and the anode electrode;
Applying a voltage to the anode line and the cathode electrode to open-break the defective portion;
Cutting the projection of the anode line by laser irradiation;
A method of repairing an organic EL display device, comprising:
カソード電極とアノード電極との間に有機発光層を挟んだ有機EL素子を複数有し、各々の有機EL素子は、複数の信号線、複数の走査線、及び複数のアノード線の各1本にそれぞれ接続されて成り、
前記アノード線に突起部が形成されており、このアノード線の突起部とアノード電極又は同アノード電極と同電位の電極とは、絶縁層を挟んで積層されたアクティブマトリックス型の有機EL表示装置の修復方法であって、
カソード電極とアノード電極との間がショートした有機EL素子の位置を検知する工程と、
前記検知した有機EL素子のアノード線の突起部にレーザーを照射し、前記アノード線とアノード電極とを直結する工程と、
前記アノード線と前記カソード電極とに電圧を印加して欠陥部を発熱させる工程と、
前記欠陥部から発する熱又は赤外線を検出し、前記検出部にレーザーを照射して、欠陥部をオープン破壊する工程と、
前記アノード線の突起部をレーザー照射により切断する工程と、
を備えることを特徴とする、有機EL表示装置の修復方法。
A plurality of organic EL elements each having an organic light emitting layer sandwiched between a cathode electrode and an anode electrode, and each organic EL element is connected to each of a plurality of signal lines, a plurality of scanning lines, and a plurality of anode lines. Each connected,
A projection is formed on the anode line, and the projection of the anode line and the anode electrode or the electrode having the same potential as the anode electrode of the active matrix type organic EL display device laminated with an insulating layer interposed therebetween A repair method,
Detecting the position of the organic EL element short-circuited between the cathode electrode and the anode electrode;
A step of irradiating a laser beam to the protruding portion of the anode line of the detected organic EL element and directly connecting the anode line and the anode electrode;
Applying a voltage to the anode line and the cathode electrode to generate heat at the defective portion;
Detecting heat or infrared rays emitted from the defective portion, irradiating the detection portion with a laser, and opening the defective portion; and
Cutting the projection of the anode line by laser irradiation;
A method of repairing an organic EL display device, comprising:
カソード電極とアノード電極との間に有機発光層を挟んだ有機EL素子を複数有し、各々の有機EL素子は、複数の信号線、複数の走査線、及び複数のアノード線の各1本にそれぞれ接続されて成るアクティブマトリックス型の有機EL表示装置の製造方法において、
アノード線を形成する工程において、予めアノード線に突起部を形成しておき、このアノード線の突起部と絶縁膜を挟んでアノード電極又は同アノード電極と同電位の電極とを積層するように形成することを特徴とする、有機EL表示装置の製造方法。
A plurality of organic EL elements each having an organic light emitting layer sandwiched between a cathode electrode and an anode electrode, and each organic EL element is connected to each of a plurality of signal lines, a plurality of scanning lines, and a plurality of anode lines. In the manufacturing method of the active matrix type organic EL display device each connected,
In the step of forming the anode line, a protrusion is formed in advance on the anode line, and the anode electrode or the anode electrode and the electrode having the same potential are stacked with the protrusion of the anode line sandwiched between the insulating films. A method for manufacturing an organic EL display device.
JP2006302771A 2006-11-08 2006-11-08 Organic el display device and repairing method therefor, and manufacturing method for the organic el display device Withdrawn JP2008123700A (en)

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