JP2008122563A - Color filter with sub photo spacer (ps) using white design system, and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a color filter with a sub-PS by using a white (transparent film) design system, with which a film thickness difference is produced between a PS and a sub-PS by using a white portion formed on a color filter substrate having a light shielding portion and a pixel portion the an opening portion of the light shielding portion. <P>SOLUTION: The method for manufacturing a color filter includes forming a PS in the center portion of a white pattern and in the peripheral portion of the white pattern. The formation of the PS pattern on the center portion of the white pattern includes at least a step of forming a resist having a wavy profile of the film thickness in such a manner that the resist is thick in the center portion and is thin in the peripheral region on the white pattern. Thus, a color filter with the sub-PS using the white design system is manufactured. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a color filter with a sub-PS (photo spacer) using a white design (transparent film) used for a liquid crystal display device and the like, and a manufacturing method thereof.

  In the manufacture of a conventional liquid crystal display panel, the color filter should have a PS arrangement density as low as possible in order to give the panel flexibility when it is bonded to the TFT substrate. The PS is an abbreviation for Photo PSacer (photo spacer), and is a columnar spacer formed by a photolithographic method of applying a photosensitive resin, pattern exposure to the photosensitive resin, and development thereof. The gap (gap) between the color filter and the TFT substrate is regulated by the height of the columnar spacer. The bonding gap between the color filter substrate and the TFT substrate depends on the film thickness of the PS. In a liquid crystal display device, a substrate on which a color filter is formed and a TFT substrate are opposed to each other with a gap, and both substrates are bonded together so that liquid crystal or the like is vacuum-sealed in the gap.

  However, when the pressure is pressed from the panel surface after bonding, for example, with a finger or the like, if the PS arrangement density is low, the PS is crushed, the gap between the color filter and the TFT substrate is narrowed, and the cell gap is reduced. In order to be defective, it is better that the PS arrangement density is higher after bonding.

  Therefore, in the conventional technique, there is no influence at the time of bonding, and in order to support the panel when pressed with a finger or the like after bonding, the film thickness is slightly lower than PS for forming a bonding gap, that is, It is necessary to add a sub-PS having a low height. For this reason, a color filter with a sub-PS (photo spacer) and a manufacturing method thereof have been proposed.

  For example, as a method for forming the sub-PS, there is a method in which a PS for gap formation (hereinafter simply referred to as PS) and a sub-PS are simultaneously formed in a single PS forming step. The forming method makes a difference in the opening area of the PS pattern formed on the photomask used for pattern exposure and the sub PS pattern, that is, widens the opening area of the PS pattern and narrows the opening area of the sub PS pattern. Thus, the film thickness is formed by a method in which the difference in film thickness is caused by the difference in exposure amount.

  On the other hand, for a liquid crystal display device, a transflective liquid crystal panel technology that satisfies energy saving and high quality in mobile applications has been proposed. Among these techniques, a technique called a White design method is known. In this method, a step portion with a transparent film (White) protruding is formed in a part of the color filter, and the liquid crystal cell gap in the transparent film (White) portion is reduced to increase brightness and increase the response speed. There is a purpose. In the following description, “White design” refers to a level difference of a transparent film formed in a color filter incorporated in a White design type liquid crystal display device. The formation of a white pattern using the white design is effective in obtaining a transflective color filter with high brightness and high-speed response.

  An example of a method for manufacturing a color filter with a sub-PS (photo spacer) using the White design will be described. First, a resist solution for forming a light shielding pattern is applied on a substrate for a color filter, pattern exposure is performed on the resist, and a light shielding pattern, for example, BM (black matrix) is formed on the substrate by development processing. Note that the BM has an opening that transmits light and is involved in image display, and has a role of shielding light that enters the area other than the opening. The BM pattern has a lattice shape or a stripe shape, and pixels are formed in the openings.

  Next, an R (red) pixel, a G (green) pixel, and a B (blue) pixel pattern for coloring the transmitted light are formed in the opening. The R pixel is formed by applying an R pixel resist solution on the substrate, pattern exposing the resist, and forming an R pixel pattern portion on the substrate by development processing. The formation of the pixel pattern is performed for the R pixel, the G pixel, and the B pixel, and three processes are performed.

  Next, a transparent film (White) pattern portion is formed on each of the pixel portions. The white pattern is formed by applying a white resist solution on the transparent electrode of the substrate, exposing the white pattern to the resist, and forming a white portion by development processing. Further, a transparent electrode made of a metal oxide film covering the pixel portion including the light shielding pattern and the transparent film (White) pattern portion is formed by a vacuum film forming method.

  Next, the PS and the sub PS are formed at a predetermined position, for example, a position above the light shielding portion. Below, the formation method of PS and sub-PS is demonstrated. In addition, White (transparent film level | step difference) is a pattern of the transparent resin base material of the special shape formed after each pixel part formation, and is a transparent layer with a uniform film thickness. The sub-PS is formed at the same time as the PS and has a lower height than the PS.

  3A to 3B are side sectional views for explaining an example of a conventional method for forming PS and sub-PS.

  The process of PS in FIGS. 3A to 3B is a forming method using a difference in exposure amount. First, the photosensitive resist 9 for PS is uniformly applied to the entire surface of the substrate 1 to form a layer (see FIG. 3A). Next, the photomask 20 having a difference between the opening dimensions of the PS pattern and the sub PS pattern, that is, the large area mask opening 21 as the PS pattern and the small area mask opening 22 as the sub PS pattern is formed. Using the PS and sub-PS mask patterns, the resist is exposed. That is, by making the PS pattern opening area wide and the sub PS pattern opening area narrow, a difference is made in the exposure amount of each opening. As a result, a sufficiently exposed PS pattern necessary to sufficiently cure the photosensitive resist and a sub-PS pattern resist subjected to insufficient exposure resulting in insufficient curing are formed.

  3B, the unexposed resist is dissolved with a developer to form a PS5 having a normal shape and height and a sub-PS6 having a thin shape and a low height. That is, the forming method of FIG. 3 is a method of providing a difference in film thickness after the development process due to a difference in exposure amount, and causes a difference in height between PS and sub-PS.

  FIG. 4 is a side sectional view for explaining an example of another conventional method for forming PS and sub-PS.

  That is, the sub-PS formation method of FIG. 4 is a diagram in which PS and sub-PS are formed by the application of the resist onto the laminated base (resist waviness phenomenon after application). In this PS process, a PS resist is applied to the entire surface of the base substrate having the laminated portion where the BM2, RGB pixels 3a, 3b, 3c and the transparent electrode 4 are laminated. In the laminated base substrate, there is a step in a portion laminated in advance on the resist coating surface, and by emphasizing the step in the laminated portion, for example, BM2, RGB pixels 3a, 3b, 3c and transparent electrode 4 And other parts, for example, a part where BM2 and the transparent electrode 4 are laminated. When a resist is applied to this laminated base substrate, the applied resist surface position is high in the vicinity of the part where the step of the laminated part is emphasized, that is, the resist film thickness is thick, and otherwise, the resist surface height is low. In other words, the resist film thickness is reduced.

  The example shown in FIG. 4 is an example in which the R pixel 3a, the G pixel 3b, the B pixel 3c, and the transparent electrode 4 are formed on the light shielding film BM2, and the other normal steps are as follows. It is on the light shielding film BM2 and the transparent electrode 4. Next, the PS and the sub-PS mask pattern are transferred to the resist using the photomask on which the PS and the sub-PS pattern are formed. That is, the PS pattern is formed at a position where the resist is thick, and the sub PS pattern is formed at a position where the resist is thin, so that a PS pattern and a sub PS pattern having different resist film thicknesses are formed.

  Next, the unexposed resist is dissolved with a developing solution by the processing of the developing step to form PS5 and sub-PS6 having a height lower than PS. That is, the difference between the heights of the PS and the sub-PS is generated by a method of differentiating the film thickness by a resist coating method based on the stacked base layer (resist waviness phenomenon).

  Next, description will be made on the bonding of the color filter substrate with PS and the TFT substrate in the production of the liquid crystal display device. FIG. 5 is a side sectional view when the color filter substrate with PS 1 and the TFT substrate 30 are bonded together, (a) is when the two substrates are bonded, and (b) is between the substrates. After the liquid crystal is sealed and bonded, that is, a panel is formed.

  In FIG. 5A, when the color filter substrate 1 with sub-PS and the TFT substrate 30 are bonded together, they are supported only by PS5. The broken line s in the figure is the contact start position between the surface of PS5 and the TFT substrate 30 surface. In this state, the sub-PS 6 is not in contact with the TFT substrate 30 and the substrates 1 and 30 are bonded together mainly through the PS 5 and are bonded with the panel having flexibility.

  Next, FIG. 5B shows a state in which the liquid crystal 40 is sealed after the color filter substrate 1 with sub-PS and the TFT substrate 30 are bonded together. A broken line e is a contact end position between the color filter substrate 1 and the TFT substrate 30. After the color filter 50 with the sub-PS and the TFT substrate 30 are bonded together, as shown in FIG. 5 (c), when the pressing force is applied from the panel surface, for example, when pressed by a finger or the like, the PS is deformed and both substrates The gap is narrowed, but if it is narrowed to some extent, it is supported by the sub-PS, so it will not narrow further. Since the panel strength is enhanced by PS and sub-PS, the gap between the color filter and the TFT substrate and the cell gap are stabilized even when pressure is applied.

  However, the sub-PS formation method has a problem in each case.

  In the method of forming the sub-PS by the exposure amount difference, a portion where the exposure amount at the pattern opening of the photomask is insufficient, that is, the sub-PS opening is insufficient. For this reason, the sub-PS has a thin shape and a reduced film thickness, which causes problems such as the sub-PS being easily peeled off. Further, in the development processing of a resist with an insufficient exposure amount, the development conditions become unstable, and there is a problem that the resist shape or size after development becomes large.

  When the sub-PS is formed on the above-described laminated base, the difference in resist film is usually reduced due to the flattening characteristics of the resist solution for PS. Therefore, in order to secure a sufficient film thickness, the step is emphasized. Although it is necessary to enlarge the area, there are many cases where there is no room in design, and there is a problem that cannot be realized.

The known literature is described below.
JP 2003-84289 A

  In a method for manufacturing a color filter with a sub-PS using a white design, a step between a light-shielding portion and a white portion formed on a color filter substrate having a pixel portion at its opening is used to make a PS and a sub-PS. The object is to provide a method of manufacturing a color filter that provides a difference in film thickness.

According to the first aspect of the present invention, a light-shielding portion on a substrate, a pixel portion in its opening, a transparent film (White) portion having a step, and a transparent electrode thereon are formed, and then PS is formed. A method of manufacturing a color filter with a sub-PS using a white design to be formed,
A method of manufacturing a color filter with a sub-PS using a white design, characterized in that a PS is formed in the central portion of the white pattern and a sub-PS is formed in the peripheral portion of the white pattern.

  The invention according to claim 2 of the present invention is the method of manufacturing a color filter with sub-PS using the white design according to claim 1, wherein the PS is formed on the white portion.

  The invention according to claim 3 of the present invention is characterized in that the PS is formed of a thick PS and a thin PS at a time, with a sub PS using the white design according to claim 1 or 2 It is a manufacturing method of a color filter.

  According to a fourth aspect of the present invention, in the PS pattern formation, the resist film is formed such that the resist film thickness is thick in the central part region of the white pattern and the resist film thickness is thin in the peripheral part region of the white pattern. The color filter with a sub-PS using the White design according to any one of claims 1 to 3, wherein the color filter is manufactured by a configuration including at least a step of forming a resist so that the thickness is swelled. It is a manufacturing method.

  In the color filter manufacturing method of the present invention, the PS having the white design portion formed therein is formed in the white design portion. At this time, since the PS is formed on the surface of the White pattern, the PS film is thick in the central portion of the White pattern and the PS film is thin in the peripheral portion of the White pattern due to the influence of the resist waviness during the resist formation. . Therefore, a high PS can be formed in the center portion of the white pattern, and a low PS, that is, a sub-PS can be formed in the peripheral portion.

The invention according to claim 5 of the present invention is a color filter with a sub-PS in which a light shielding portion on a substrate, a pixel portion, a white portion, and a transparent electrode are formed on the opening, and a PS is formed. There,
A color filter with a sub-PS using a white design, characterized in that a PS is formed in a central area of the white pattern and a sub-PS is formed in a peripheral area of the white pattern.

  The invention according to claim 6 of the present invention is the color filter with sub-PS using the white design according to claim 5, wherein the PS is formed in a white portion.

  In the color filter of the present invention, PS is arranged in the central part of the White pattern and PS is arranged in the peripheral part of the pattern. In the present invention, since the PS arrangement position is a white pattern, it is possible to change the PS film thickness difference, and PS and sub-PS can be formed by one pattern exposure.

  If the method for manufacturing a color filter with a sub-PS using the White design of the present invention is used, it is not necessary to narrow down the exposure amount in the formation of the sub-PS, so that normal development processing can be performed and even if the height is low. A sub-PS that hardly peels off can be formed.

  If the method for manufacturing a color filter with a sub-PS using the White design of the present invention is used, the sub-PS which is difficult to peel off can be formed even if the height is low because the film thickness waviness of the resist for PS is used.

  If the manufacturing method of the color filter with sub-PS using the White design of the present invention is used, the film thickness of the resist for PS is used, so that the light-shielding portion for forming a laminated structure such as RGB that reduces the transmittance is unnecessary. The color filter having a sufficient film thickness difference between PS and sub-PS, which is difficult to peel off even when the height is low, can be produced, and sub-PS using the White design of the present invention. By using the attached color filter, there is an effect that the problem concerning PS and sub PS at the time of bonding the color filter with sub PS and the TFT substrate can be solved.

  A color filter according to the present invention, particularly a color filter with a sub-PS using White design, and a manufacturing method thereof will be described below based on an embodiment.

  FIG. 1 is a partially enlarged view of an embodiment of a color filter with sub-PS using the White design of the present invention, FIG. 1 (a) is a top view, and FIG. 1 (b) is FIG. It is a sectional side view in the yy 'line of a). FIG. 1C is a front sectional view of the x-x ′ plane. In FIG. 1B, PS is formed on White 10, but the PS pattern is not shown.

  In the method of manufacturing the color filter of the present invention shown in FIG. 1, that is, the color filter with sub-PS using the White design, the BM 2 as the light shielding portion is formed on the color filter substrate 1. Next, after the pixel 3 is formed in the opening 2 a between the BMs 2, the White 10 is formed on the BM 2 and the pixels 3. Next, the conductive transparent electrode 4 is laminated on the BM 2, the pixel 3, and the White 10. Next, PS and sub-PS are formed on the surface of the transparent electrode 4 by pattern formation using a known photolithography process.

  The top view of FIG. 1A shows the formation surface of the PS and sub-PS, and the pattern of the light-shielding part BM2 is formed in the horizontal direction and arranged at a predetermined interval in the vertical direction. That is, the BM has a stripe shape. Between each BM2, for example, an R (red) pixel 3a, a G (green) pixel 3b, and a B (blue) pixel 3c are formed in the BM pattern opening 2a, and a pattern of White 10 is formed on the surface thereof, on the surface. It is a top view in which the transparent electrode 4 was formed.

  The White 10 in FIG. 1 is arranged and formed in a planar view band shape so as to intersect the BM 2 at an angle of 90 degrees. A plurality of Whites are arranged at predetermined intervals in the horizontal direction in FIG. 1, but only one is displayed in FIG. White 10 has a formation width of around 100 μm. The surface on the white pattern in a side view has a step protruding from the pixel portion due to the thickness of the white, that is, the region of the peripheral portion 12 and the central portion sandwiched between the regions of the peripheral portion 12 Is formed.

  In the present invention, a PS is formed in the region of the central portion 11 of the white, and a sub-PS is formed in the region of the peripheral portion 12 of the white. In the present invention, when a resist for forming PS is applied, the resist film thickness changes between the central portion and the peripheral portion of the white pattern as a base, thereby changing the PS film thickness. We focused on what would be possible. For example, using the resist waviness phenomenon, the height (average value) of PS is made higher than the sub-PS (average value), and the difference in height (average value) is 20 times the height of PS. The manufacturing position of the color filter which selected the formation position of PS and sub-PS so that it might become% -25% and formed in this position was invented. The manufacturing method of the present invention is most suitable for a color filter with a sub-PS using White design.

  FIG. 1B is a side sectional view taken along line y-y ′ of FIG. The BM of the substrate 1 is formed, and the pixels 3 are formed in the openings. White 10 is formed on the formation surface of the BM and the pixel, and the transparent electrode 4 is formed on the formation surface. In the formation of PS, which is the next process, a resist coating surface is formed.

  The method for forming the PS and the sub-PS is a pattern forming method using a photolithographic process method. In the pattern forming material application step, the substrate is a substrate with poor flatness. That is, the resist is applied to a substrate on which a step surface and a flat surface with relatively good flatness are mixed. Since the flatness is poor, the resist film thickness is thick in the central region on the white pattern and the resist film is thin in the periphery of the white pattern, that is, in the step region. That is, a resist waviness phenomenon occurs.

  A region near the position where PS5 is arranged is a central portion of the White pattern. In the central portion of the white pattern, the applied resist has a uniform film thickness on the flat surface. On the other hand, the region near the position where the sub-PS 6 is arranged is the peripheral portion of the white pattern, that is, the step portion having poor flatness. The resist film thickness is thin.

  As shown in FIG. 1C, which is an enlarged plan view of the dotted line portion of FIG. 1A, the central portion 11 of the White pattern is a region having a high resist thickness, and the peripheral portion 12 of the White pattern is a resist. This is a region with a low thickness.

  It is preferable that the distance 13 from the white pattern edge to the outer periphery of the sub-PS in the drawing is located at a position of 20 μm or less.

  2A to 2C are partially enlarged side sectional views for explaining the PS process of the color filter with sub-PS using the white design of the present invention. This is to explain the swell phenomenon of the resist described above. 2A is a substrate surface before applying a PS forming resist, FIG. 2B is a substrate surface after applying a resist, and FIG. 2C is a substrate surface on which PS and sub-PS are formed. is there.

  As shown in FIG. 2A, the pattern is divided into a central portion 11 of the white pattern and peripheral portions 12 of the white pattern on both sides of the central portion 11. In the vicinity of the white portion 12 of the white pattern is a step surface with a step formed as a white pattern and a pixel, and conversely, the central portion 11 of the white pattern is a flat surface with few steps. In the peripheral portion 12 of the White pattern, a step due to the difference in thickness between the White pattern and the pixel is formed, and in order to become the end portion of the White pattern, the film surface of the applied resist solution is lowered, that is, the pixel surface It is a portion that flows in three directions and the resist thickness is reduced. A difference in film thickness occurs between the central portion and the peripheral portion of the white pattern due to the swell phenomenon of the resist.

  In FIG. 2B, a PS resist 9 is applied and formed on the substrate. Due to the above-described swell phenomenon of the resist, the resist film is formed thick in the central portion 11 of the white pattern as a base and thin in the peripheral portion 12 of the white pattern. Each film thickness difference is the difference between the heights of PS and sub-PS. Therefore, it is important to optimize the fluidity (liquid viscosity) of the resist solution and the coating conditions (spin speed).

  By performing a photolithography process on the substrate of FIG. 2B, PS5 and sub-PS6 are formed on the substrate as shown in FIG. 2C. In the central portion 11 of the White pattern, PS5 is formed and its height is high, and in the peripheral portion 12 of the White pattern, the sub-PS is low. The difference between the PS and sub-PS heights is the resist film thickness difference. The dashed curve is the position of the resist 9 surface.

  It should be noted that conventional PS formation is applied to a resist having a thick resist film thickness in the central portion of the white pattern of the present invention and a thin resist film thickness in the peripheral region, that is, a resist utilizing the swell phenomenon of the resist. It is also possible to use a method for forming PS and sub-PS using a difference in exposure amount, or a method for forming using a stacked base layer. This method is convenient when the film thickness difference between PS and sub-PS is arbitrarily adjusted. The method will be described below (see FIGS. 1, 3, and 4).

  The formation of PS and sub-PS according to the present invention is a pattern forming method using a photolithographic process, and the resist coating process includes a surface of a region with relatively good flatness and a region with poor flatness with steps. This is a manufacturing method in which a resist is applied on a substrate having a mixed surface and PS and sub-PS are collectively formed using the resist.

  When the manufacturing method according to the present invention is used in combination with a method using a stacked base board, on the BM 2 or on a stacked base substrate in which an R pixel 3a (or G pixel 3b or B pixel 3c) and a white pattern are stacked. It is possible to form the transparent electrode 4 and form a white pattern and a region on the transparent electrode 4. In this case, the area of the central portion of the white pattern is formed, for example, on the substrate on which the R pixel 3a is stacked. In the coating process, the substrate in which the surface of the central portion of the white pattern and the region surface of the peripheral portion of the white pattern are mixed on the laminated surface of the R pixel 3a, the white pattern, and the transparent electrode 4 on the BM2. This is a manufacturing method in which a resist is applied on top and PS and sub-PS are formed on the resist. In this method, a resist is applied on a substrate at a step-emphasized portion of a multi-layer laminated portion used in accordance with a central portion region of a white pattern, and the resist film thickness difference is further enlarged. This is a manufacturing method in which the difference in film thickness is enlarged (see FIG. 4).

  Further, the manufacturing method for finely adjusting the difference in film thickness between PS and sub-PS is a conventional forming method using a difference in exposure dose, and a large-area mask opening 21 is formed for forming PS and a small area is formed for forming sub-PS. The PS pattern and the sub PS pattern are respectively transferred to the resist using the photomask 20 in which the mask opening 22 is formed. Next, development is performed while finely adjusting the development conditions to form a PS pattern and a sub-PS pattern resist. It should be noted that in the formation method using the stacking underlayer using the conventional exposure amount difference utilizing the difference between the center and peripheral arrangement positions of the white pattern of the present invention, each addition and subtraction and setting of the conditions thereof are studied. It is important to optimize the result of the evaluation test (see FIG. 3).

  An embodiment of a color filter with a sub-PS using the White design, which is a color filter of the present invention, will be described below. The first embodiment will be described with reference to FIGS.

  A method of manufacturing a color filter with sub-PS using the White design of Example 1 of the present invention will be described. First, BM2 was formed on a color filter substrate.

Next, a pattern of an R pixel 3a, a G pixel 3b, and a B pixel 3c was formed in the opening 2a. Next, a pattern of White (transparent film) 10 was formed on the pixel 3. Next, a transparent electrode 4 was formed on the substrate (see FIG. 2A).

  As the white resist, a negative resist (manufactured by JSR Corporation) was used, and the resist film thickness was 2.3 μm. The white photomask is formed with the white pattern shown in FIG. 2 and has a line width of 100 μm.

  Next, PS and sub-PS were formed on White10. PS5 is disposed on the central portion 11 of the White pattern, and the sub-PS6 is disposed on the peripheral portion 12 of the White pattern (see FIG. 2B).

  Negative resist (manufactured by JSR Corporation) was used as the resist for PS and sub-PS. The resist film thickness was formed on White 10 under a coating condition of 2.3 μm.

The white photomask was octagonal, and the pattern line width was 12 μm. In the pattern exposure, the exposure gap was set to 150 μm, and the exposure amount was 150 mJ / cm ² . Next, in the development processing, an inorganic alkaline solution was used as the developer, and the development time was 40 seconds to form PS and sub-PS. The sub PS formation position was 8 μm from the edge of the White pattern (see FIG. 2C).

  The evaluation result of the color filter of Example 1 is 2.3 μm in height in PS. Its line width is 12 μm. The sub PS has a height of 1.8 μm. The line width is 12 μm. The color filter of Example 1 has good shape evaluation and strength evaluation.

FIG. 3 is a partial view of a color filter with a sub-PS using the white design of the present invention, where (a) is a top view, (b) is a side sectional view, and (c) is a partially enlarged top view. It is a sectional side view of the partial expansion of the color filter with sub-PS using the White design of the present invention, (a) before application, (b) after application, and (c) after PS formation. . It is a sectional side view explaining the example of the formation method of the conventional PS and sub-PS, and is at the time of exposure, (b) is after image development. It is a sectional side view explaining one example of the formation method of the conventional PS and sub-PS. It is a sectional side view at the time of pasting together the conventional color filter with PS and the substrate for TFT, (a) at the time of pasting, (b) after pasting, (c) at the time of pressing evaluation, That is, a panel.

Explanation of symbols

1 ... Substrate 2 ... BM
2a ... BM opening 3 ... pixel 3a ... R pixel 3b ... G pixel 3c ... B pixel 4 ... transparent electrode 5 ... PS
6 ... Sub PS
9 ... Resist 10 ... White
DESCRIPTION OF SYMBOLS 11 ... Center part of White pattern 12 ... Peripheral part 13 of White pattern ... Distance from White pattern edge to sub-PS outer peripheral part 20 ... Photomask 21 ... Large area opening 22 ... Large area opening 30 ... TFT substrate 40 ... Liquid crystal 50 ... Color filter

Claims (6)

Color with sub-PS using White design that forms PS after forming light-shielding part on substrate, pixel part in opening, transparent film (White) part with step and transparent electrode on it A method for manufacturing a filter, comprising:
A method of manufacturing a color filter with a sub-PS using a white design, characterized in that a PS is formed in a central portion of a white pattern and a sub-PS is formed in a peripheral portion of the white pattern.   2. The method of manufacturing a color filter with a sub-PS using the white design according to claim 1, wherein the PS is formed on a white portion.   3. The method of manufacturing a color filter with a sub-PS using the white design according to claim 1, wherein the PS is formed by forming a thick PS and a thin PS at a time.   In the PS pattern formation, the resist film is formed so that the resist film thickness is thick in the central part region of the white pattern and the resist film thickness is swelled in the peripheral part region of the white pattern. 4. The method of manufacturing a color filter with sub-PS using the white design according to claim 1, wherein the color filter is manufactured by a configuration including at least a process. A color filter with a sub-PS in which a light-shielding portion on a substrate, a pixel portion in its opening, a white portion, a transparent electrode formed thereon, and a PS formed thereon,
A color filter with a sub-PS using a white design, characterized in that a PS is formed in a region of a central portion of the white pattern and a sub-PS is formed in a region of a peripheral portion of the white pattern.   6. The color filter with sub-PS using the white design according to claim 5, wherein the PS is formed in a white portion.

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