JP2008119729A - Laser beam welding method - Google Patents

Laser beam welding method Download PDF

Info

Publication number
JP2008119729A
JP2008119729A JP2006307327A JP2006307327A JP2008119729A JP 2008119729 A JP2008119729 A JP 2008119729A JP 2006307327 A JP2006307327 A JP 2006307327A JP 2006307327 A JP2006307327 A JP 2006307327A JP 2008119729 A JP2008119729 A JP 2008119729A
Authority
JP
Japan
Prior art keywords
welding
plate material
thin plate
laser
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006307327A
Other languages
Japanese (ja)
Other versions
JP5040269B2 (en
Inventor
Katsuhiko Yoshihara
克彦 吉原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Device Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Device Technology Co Ltd filed Critical Fuji Electric Device Technology Co Ltd
Priority to JP2006307327A priority Critical patent/JP5040269B2/en
Publication of JP2008119729A publication Critical patent/JP2008119729A/en
Application granted granted Critical
Publication of JP5040269B2 publication Critical patent/JP5040269B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser beam welding by which weld area can be enlarged by suppressing the generation of spatters and, as a result, bonding strength is increased. <P>SOLUTION: The laser beam welding by which weld strength is increased is provided by optimizing the power of the laser beam 7, suppressing the generation of spatters and enlarging the weld area S1 by forming a thin plate working part 2 which is thinner than the thickness L1 of an upper metal plate to be welded in a place (place to be welded) of an upper metal plate 1 to be welded onto which a laser beam 7 is emitted and making the surface 3 to be irradiated of the laser beam in this thin plate working part 2 into a recessed part 4 and its rear 5 into a projecting part 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

この発明は、重ね合わされた2枚の溶接板材をレーザ溶接する場合において、溶接時に発生するスパッタ(被溶接部材の飛散)を抑制し、溶接面積を拡大し溶接強度を大きくできるレーザ溶接方法に関する。   The present invention relates to a laser welding method capable of suppressing spatter (scattering of members to be welded) generated during welding, expanding a welding area, and increasing welding strength when laser welding two superposed welding plate materials.

図5は、従来のレーザ溶接方法を示す工程図であり、同図(a)は溶接前の溶接板材の要部断面図、同図(b)は溶接後の溶接板材の要部断面図である。
図5(a)において、下部溶接板材52の上面に上部溶接板材51を重ね合わせ、上部溶接板材51の表面よりレーザ光53を照射する。レーザ光53が上部溶接板材51の表面に照射されると、照射部分でレーザ光53が吸収され、熱エネルギに変換されることにより溶接が進行する。
5A and 5B are process diagrams showing a conventional laser welding method, in which FIG. 5A is a cross-sectional view of the main part of the welded plate material before welding, and FIG. 5B is a cross-sectional view of the main part of the welded plate material after welding. is there.
In FIG. 5A, the upper welding plate material 51 is superimposed on the upper surface of the lower welding plate material 52, and the laser beam 53 is irradiated from the surface of the upper welding plate material 51. When the laser beam 53 is irradiated on the surface of the upper welding plate material 51, the laser beam 53 is absorbed at the irradiated portion and is converted into thermal energy so that welding proceeds.

図5(b)において、レーザ光53を照射することにより、照射部分の金属が溶融・再凝固することにより溶融・再凝固部54が形成される。この場合、レーザ光53のパワー(エネルギー)が小さいと、上部溶接板材51の下部溶接板材52に対する溶け込みが少なく、溶接強度(接合強度)は低くなる。また、この部分に電流を流した場合には抵抗が大きい為に配線としての損失が大となる。   In FIG. 5B, by irradiating the laser beam 53, the irradiated portion of the metal is melted and re-solidified to form a melted and re-solidified portion 54. In this case, if the power (energy) of the laser beam 53 is small, the upper welding plate material 51 has little penetration into the lower welding plate material 52 and the welding strength (joining strength) becomes low. In addition, when a current is passed through this portion, the loss as a wiring increases due to the large resistance.

溶接強度を大きくしようとして、レーザ光53のパワーを大きくして溶接した場合、図6に示すような状態となる。すなわち、下部溶接板材52に対する上部溶接板材53の溶け込み深さは充分確保されるが、入熱過多な状態(過剰に発熱する状態)となり上部溶接板材51の溶融部がスパッタされて溶融部材が飛散してしまい溶融・再凝固部54の領域が減少する。また、このようにスパッタ55が生じるとレーザ光57のパワーはスパッタ55を発生するのに消費され、溶融させるのに十分なパワーが消費されなくなる。そのため、溶融部がスパッタされた後の溶融・再凝固部54では溶接面積S3が十分に広がらず溶接強度が低くなり、電流を流した場合にも電気抵抗が大きいために好ましくない。   When welding is performed by increasing the power of the laser beam 53 in order to increase the welding strength, the state shown in FIG. 6 is obtained. That is, the depth of penetration of the upper welding plate 53 with respect to the lower welding plate 52 is sufficiently ensured, but the heat input is excessive (a state of excessive heat generation), and the molten portion of the upper welding plate 51 is sputtered and the molten member is scattered. As a result, the area of the melting / re-solidifying portion 54 decreases. Further, when the sputter 55 is generated in this way, the power of the laser beam 57 is consumed to generate the sputter 55, and sufficient power for melting is not consumed. Therefore, in the melted / resolidified portion 54 after the melted portion is sputtered, the welding area S3 is not sufficiently widened, the welding strength is lowered, and even when an electric current is passed, the electric resistance is large, which is not preferable.

このような状態は溶接板材が厚い場合に顕著に現れる。例えば低融点材料であるNiめっき銅板の場合、上部溶接板材51の厚さが1.0mmを超えるとスパッタ55の発生が多くなる。
これを避けるために、レーザ光53が照射される箇所の上部溶接板材51に薄板加工部57(肉厚の薄い箇所)を形成し、この薄板加工部57の凹部58にレーザ光53を照射してパワーを過度に大きくしなくても溶融が十分行われるレーザ溶接方法が開示されている(特許文献1、特許文献2)。この薄板加工部57が形成された上部溶接板材51の要部断面図は図7(a)に示すように、レーザ光53が照射される面に薄板加工部57として凹部58が形成され、この面と反対の裏面59は平坦になっている。
特開2005−71465号公報 特開平11−215652号公報
Such a state appears remarkably when the welded plate material is thick. For example, in the case of a Ni-plated copper plate that is a low melting point material, spatter 55 is increased when the thickness of the upper weld plate 51 exceeds 1.0 mm.
In order to avoid this, a thin plate processed portion 57 (thin thickness portion) is formed in the upper welded plate material 51 where the laser beam 53 is irradiated, and the concave portion 58 of the thin plate processed portion 57 is irradiated with the laser beam 53. Thus, a laser welding method is disclosed in which melting is sufficiently performed without excessively increasing the power (Patent Documents 1 and 2). As shown in FIG. 7A, the cross-sectional view of the main part of the upper welded plate material 51 in which the thin plate processed portion 57 is formed has a concave portion 58 formed as a thin plate processed portion 57 on the surface irradiated with the laser beam 53. The back surface 59 opposite to the surface is flat.
JP-A-2005-71465 JP-A-11-215652

前記の図5に示したように、上部溶接板材51の厚みが厚い場合は、レーザ溶接のときに、大きなパワーが必要になり、スパッタ55の発生が起こり、溶接強度が低下する。
また特許文献1、2に開示されている図7のような方法でも、図7(a)に示すように、上部溶接板材51の裏面59が平坦なため、レーザ光53による熱60が過度に広がり溶融が不完全となり、図7(b)に示すように溶接面積S4を十分大きくできない場合がる。溶接面積S4が小さいと溶接強度が低下してしまう。
As shown in FIG. 5 described above, when the thickness of the upper welding plate material 51 is thick, a large power is required at the time of laser welding, the generation of spatter 55 occurs, and the welding strength decreases.
7 as disclosed in Patent Documents 1 and 2, as shown in FIG. 7A, the back surface 59 of the upper welded plate material 51 is flat, so that the heat 60 from the laser beam 53 is excessive. Spreading and melting may be incomplete, and the welding area S4 may not be sufficiently large as shown in FIG. If the welding area S4 is small, the welding strength decreases.

一方、レーザ光53のパワーを大きくして十分溶融させようとすると、図8で示すようにスパッタ55が発生して溶接面積S5を十分大きくとれなくなるという不具合を生じる。
この発明の目的は、前記の課題を解決して、スパッタの発生を抑制して溶接面積が大きくでき、その結果、接合強度を大きくできるレーザ溶接方法を提供することにある。
On the other hand, if the power of the laser beam 53 is increased to sufficiently melt the laser beam 53, the spatter 55 is generated as shown in FIG. 8 and the welding area S5 cannot be sufficiently increased.
An object of the present invention is to solve the above-mentioned problems and provide a laser welding method capable of increasing the welding area by suppressing the generation of spatter and, as a result, increasing the joining strength.

前記の目的を達成するために、上部溶接板材と下部溶接板材を重ね合わせてレーザ溶接する方法において、レーザ光が照射される上部溶接板材に該上部溶接板材の厚さより薄い薄板加工部を形成し、該薄板加工部がレーザ光照射側に凹部、該凹部と対向する裏面側に凸部を有し、該凸部を前記下部溶接板材に接触させて前記上部溶接板材と前記下部溶接板材を重ね合わせ、前記レーザ光を前記凹部に照射して前記上部溶接板材と前記下部溶接板材をレーザ溶接する。 In order to achieve the above-mentioned object, in a method of laser welding by superposing an upper welded plate material and a lower welded plate material, a thin plate processed portion thinner than the thickness of the upper welded plate material is formed on the upper welded plate material irradiated with laser light. The thin plate processed portion has a concave portion on the laser beam irradiation side, and a convex portion on the back surface opposite to the concave portion, and the convex portion is brought into contact with the lower welding plate material, and the upper welding plate material and the lower welding plate material are overlapped. In addition, the laser beam is irradiated to the concave portion, and the upper welding plate material and the lower welding plate material are laser-welded.

また、前記上部溶接板材と下部溶接板材の材質が、互いに低融点材料であるとよい。
また、前記低融点材料が、Niメッキ銅であるとよい。
また、前記薄板加工部の厚さが、前記上部溶接板材の前記薄板加工部が形成されない箇所の厚より薄いとよい。
また、前記薄板加工部の厚さが、1mm以下であるとよい。
Moreover, the material of the said upper welding plate material and a lower welding plate material is good in a mutually low melting point material.
The low melting point material may be Ni plated copper.
Moreover, the thickness of the said thin plate process part is good to be thinner than the thickness of the location in which the said thin plate process part of the said top weld plate material is not formed.
The thickness of the thin plate processed portion is preferably 1 mm or less.

また、前記下部溶接部材が少なくとも半導体装置のヒートスプレッダであり、前記上部溶接板材が前記半導体装置の外部導出端子であるとよい。   The lower welding member may be at least a heat spreader of a semiconductor device, and the upper welding plate may be an external lead-out terminal of the semiconductor device.

この発明によれば、上部溶接板材のレーザ光が照射される箇所(溶接箇所)に薄板加工部を形成し、この薄板加工部のレーザ光照射面を凹部とし裏面を凸部とすることにより、レーザ光のパワーを最適化し、スパッタの発生を抑制し、溶接面積を大きくすることで溶接強度を大きくできるレーザ溶接方法を提供することができる。   According to the present invention, by forming a thin plate processed portion at the location where the laser beam of the upper welded plate material is irradiated (welded location), by making the laser light irradiation surface of the thin plate processed portion a concave portion and the back surface a convex portion, It is possible to provide a laser welding method capable of increasing the welding strength by optimizing the power of laser light, suppressing the generation of spatter, and increasing the welding area.

発明の実施の形態は、2枚の溶接板材を重ね合わせてレーザ溶接する場合に、レーザ照射される側の溶接板材のレーザ照射箇所の肉厚を薄くし(薄板加工部を形成し)、この箇所の照射面側に凹部を形成し、反対の裏面側に凸部を形成して、この凸部が接するように2枚の溶接板材を重ね合わせてレーザ溶接することである。こうすることで、レーザ光のパワーを最適化できて、スパッタの発生を抑制しながら、溶接面積を拡大できて溶接強度を大きくできる。以下の実施例にて具体的に説明する。   In the embodiment of the present invention, when two welding plate materials are overlapped and laser welding is performed, the thickness of the laser irradiation portion of the welding plate material on the laser irradiation side is reduced (a thin plate processed portion is formed). A concave portion is formed on the irradiation surface side of the portion, a convex portion is formed on the opposite back surface side, and two welding plate materials are overlapped and laser-welded so that the convex portion is in contact. By doing so, the power of the laser beam can be optimized, and the welding area can be expanded and the welding strength can be increased while suppressing the generation of spatter. This will be specifically described in the following examples.

図1は、この発明の第1実施例のレーザ溶接方法を示す工程図であり、同図(a)は溶接前の上部、下部溶接板材の要部断面図、同図(b)は溶接後の上部、下部溶接板材の要部断面図である。
上部溶接部板材1のレーザ照射箇所には薄板加工部2が形成され、この薄板加工部レーザ照射面側には凹部4が形成され、この凹部4と対向するように薄板加工部2の裏面(上部溶接板材の凹部に対向する裏面)に凸部6が形成されている。
FIG. 1 is a process diagram showing a laser welding method according to a first embodiment of the present invention, in which FIG. 1 (a) is a cross-sectional view of the main parts of the upper and lower welded plates before welding, and FIG. It is principal part sectional drawing of the upper part and lower part welding plate material.
A thin plate processing portion 2 is formed at the laser irradiation portion of the upper welded portion plate material 1, a concave portion 4 is formed on the thin plate processing portion laser irradiation surface side, and the back surface of the thin plate processing portion 2 so as to face the concave portion 4 ( A convex portion 6 is formed on the back surface of the upper welded plate material facing the concave portion.

この薄板加工部の厚さL2(最小箇所の厚さ)を元の板厚(薄板加工部が形成されていない箇所の厚さ:上部溶接板材1の厚さL1)よりも薄くすることが特徴である。例えば、上部、下部溶接板材1、9が低融点材料であるNiめっき銅板の場合には、上部溶接板材1の厚さが1.5mm、薄板加工部の厚さL2を1.0mm以下とする。こうすることでレーザ光7のパワーを所定値にすることで、スパッタの発生を抑制しながら、溶接面積S1を大きくして溶接強度を高めることができる。さらに詳細に説明する。     The thickness L2 (thickness of the minimum portion) of the thin plate processed portion is made thinner than the original plate thickness (thickness of the portion where the thin plate processed portion is not formed: thickness L1 of the upper welded plate material 1). It is. For example, in the case where the upper and lower welded plate materials 1 and 9 are Ni-plated copper plates which are low melting point materials, the thickness of the upper welded plate material 1 is 1.5 mm and the thickness L2 of the thin plate processed portion is 1.0 mm or less. . In this way, by setting the power of the laser beam 7 to a predetermined value, it is possible to increase the welding area S1 and increase the welding strength while suppressing the occurrence of spatter. Further details will be described.

図1(a)に示すように、下部溶接板材9の上面に薄板加工部2を形成した上部溶接板材1を重ね、この上部溶接板材1の薄板加工部2上面よりレーザ光7を照射する。以下に具体的な一例を説明する。
上部、下部溶接板材1、9にNiめっき銅板を用いて、薄板加工部2の直径を1mm程度、薄板加工部の厚さL2を0.5mm程度、上部溶接板材の厚さL1を0.8mm程度、下部溶接板材の厚さL3を1mm程度にした場合、このレーザ光7のスポット径D(焦点の直径)を0.2mm〜0.6mm、レーザ光7のパワーを1kW〜10kWの範囲(パワー密度が3〜5MW/cm程度)で所定の値を選択することで、スパッタを抑制しながら、溶接面積S1を大きくできて、大きな溶接強度を得ることができる。尚、スポット径Dを0.2mm未満にするとレーザ光7のパワー密度が大き過ぎてスパッタが発生し、0.6mmを超えるとレーザ光7のパワー密度が小さ過ぎて十分溶融しなくなる。
As shown in FIG. 1 (a), the upper welded plate material 1 in which the thin plate processed portion 2 is formed is overlapped on the upper surface of the lower welded plate material 9, and the laser beam 7 is irradiated from the upper surface of the thin plate processed portion 2 of the upper welded plate material 1. A specific example will be described below.
Using Ni-plated copper plates for the upper and lower welded plate materials 1 and 9, the diameter of the thin plate processed portion 2 is about 1 mm, the thickness L2 of the thin plate processed portion is about 0.5 mm, and the thickness L1 of the upper welded plate material is 0.8 mm. When the thickness L3 of the lower welding plate is about 1 mm, the spot diameter D (focal diameter) of the laser beam 7 is in the range of 0.2 mm to 0.6 mm, and the power of the laser beam 7 is in the range of 1 kW to 10 kW ( By selecting a predetermined value with a power density of about 3 to 5 MW / cm 2 ), the welding area S1 can be increased while suppressing spattering, and a large welding strength can be obtained. If the spot diameter D is less than 0.2 mm, the power density of the laser beam 7 is too large and spatter occurs, and if it exceeds 0.6 mm, the power density of the laser beam 7 is too small to be sufficiently melted.

前記の例は薄板加工部の厚さL2が0.5mm程度の場合であるが、この厚さL2が1.0mm以下であれば、レーザ光7のパワー密度を3〜5MW/cm程度にすることで、スパッタを抑制しながら、溶接面積を大きくできて、大きな溶接強度を得ることができる。
図1(b)において、薄板加工部2を形成した上部溶接板材1と下部溶接板材9に溶融・再凝固部8が形成される。従来、スパッタが発生していたような厚板の上部溶接板材1でも、レーザ光7が照射される箇所(溶接箇所:薄板加工部2)を薄くすることで、スパッタの発生が抑制され、充分な溶接強度を確保することが可能となる。
The above example is a case where the thickness L2 of the thin plate processed portion is about 0.5 mm. If the thickness L2 is 1.0 mm or less, the power density of the laser light 7 is set to about 3 to 5 MW / cm 2 . By doing so, while suppressing spatter, the welding area can be increased and a large welding strength can be obtained.
In FIG. 1 (b), a melting / resolidifying portion 8 is formed on the upper welded plate material 1 and the lower welded plate material 9 on which the thin plate processed portion 2 is formed. Conventionally, even in the thick upper welded plate material 1 where spatter has been generated, the occurrence of spatter can be suppressed sufficiently by reducing the portion irradiated with the laser beam 7 (welding portion: thin plate processing portion 2). It is possible to ensure a high welding strength.

つぎに、本発明の実施例における薄板加工部の形成方法について説明する。
図2は、薄板加工部を形成する方法であり、同図(a)は平面形状が四角形で底部が平坦な場合、同図(b)は平面形状が円形で底部が平坦な場合、同図(c)は平面形状が円形で底部が半球状の場合である。この薄板加工部2がレーザ溶接を行う箇所であり、この箇所のみ薄板化されている。
Next, a method for forming the thin plate processed portion in the embodiment of the present invention will be described.
2A and 2B show a method of forming a thin plate processed portion. FIG. 2A shows a case where the planar shape is a square and the bottom is flat, and FIG. 2B shows a case where the planar shape is a circle and the bottom is flat. (C) is a case where the planar shape is circular and the bottom is hemispherical. This thin plate processing portion 2 is a place where laser welding is performed, and only this portion is thinned.

図2(a)において、底部が平坦で平面形状が四角形の凹部13aを形成した支持台12a上に上部溶接板材1aを載せ、角柱状加工治具11aにより上部溶接板材1aの表面を加圧し、塑性変形させることにより、加圧した部分のみが薄板化され、薄板加工部2aが形成される。薄板加工部2aの底面は凸部6aが形成され、上部溶接板材1aの表面は四角状の圧痕で凹部4aが形成される。   In FIG. 2 (a), the upper welded plate material 1a is placed on the support base 12a in which the bottom portion is flat and the planar shape is a quadrangular concave portion 13a, and the surface of the upper welded plate material 1a is pressurized by the prismatic processing jig 11a. By plastically deforming, only the pressurized portion is thinned, and the thin plate processed portion 2a is formed. A convex portion 6a is formed on the bottom surface of the thin plate processed portion 2a, and a concave portion 4a is formed on the surface of the upper welded plate material 1a with a square indentation.

図2(b)において、前述した図2(a)の角柱状加工治具11aの代わりに円柱状加圧治具11bと底部が平坦で平面形状が円形の凹部13bを形成した支持台12bを用いた場合である。この場合も薄板加工部2bの底面は平坦であり、円柱状加工治具11bで加圧するために上側溶接板材1bの表面には円状の圧痕が形成される。尚、図中の4bは上部溶接板材1bの表面側に形成した凹部、6bは裏面側に形成した凸部である。     In FIG. 2 (b), instead of the prismatic processing jig 11a of FIG. 2 (a) described above, a cylindrical pressure jig 11b and a support base 12b in which a recess 13b having a flat bottom and a circular planar shape is formed. This is the case. Also in this case, the bottom surface of the thin plate processed portion 2b is flat, and a circular indentation is formed on the surface of the upper welded plate material 1b in order to pressurize with the cylindrical processing jig 11b. In addition, 4b in a figure is the recessed part formed in the surface side of the upper welding board | plate material 1b, and 6b is the convex part formed in the back surface side.

図2(c)において、前述した図2(a)及び図2(b)の加工治具11a、11bの代わりに円柱状加工治具11c(先端は半球状)と底部が半球状で平面形状が円形の凹部13cを形成した支持台12cを用いた場合である。前記のようにすることで、レーザ溶接部(薄板加工部2a、2b、2c)の厚さを薄くすることでスパッタを抑制しながら、溶接面積の拡大を図ることができる。     In FIG. 2 (c), instead of the processing jigs 11a and 11b shown in FIGS. 2 (a) and 2 (b), a cylindrical processing jig 11c (having a hemispherical tip) and a hemispherical bottom and a planar shape. Is a case where the support base 12c having the circular recess 13c is used. By doing as mentioned above, expansion of a welding area can be aimed at, suppressing spatter by reducing the thickness of a laser welding part (thin plate processed part 2a, 2b, 2c).

図2では、薄板加工部部2a、2b、2cを点状に形成した場合について述べたが、溶接点数が多数の場合には、工数削減の観点から、複数の溶接部を一度に溶接できるように薄板加工部2a、2b、2cの凹部4a、4b、4cの面積の広くするとよい。
図3は、上側溶接板材の薄板加工部である凸部を帯状とした場合であり、同図(a)は凹部の底面が平坦な場合、同図(b)は凹部の底面が半球状の場合である。
In FIG. 2, the case where the thin plate processed portions 2a, 2b, and 2c are formed in a dot shape has been described. However, when the number of welding points is large, a plurality of welds can be welded at a time from the viewpoint of reducing the number of man-hours. Further, the area of the concave portions 4a, 4b and 4c of the thin plate processed portions 2a, 2b and 2c may be increased.
FIG. 3 shows a case where the convex portion, which is a thin plate processed portion of the upper welded plate material, has a band shape. FIG. 3A shows a case where the bottom surface of the concave portion is flat, and FIG. 3B shows a case where the bottom surface of the concave portion is hemispherical. Is the case.

図3(a)において、帯状加工治具11dにより薄板加工部2dが帯状に形成され、その薄板加工部2dの底面は平坦となっている。
図3(b)において、半球状加工治具11eにより薄板加工部2eが帯状に形成されその底面が半球状である。尚、前記の帯状はこれに限るものではなく、溶接箇所を複数個形成できる面積であれば任意の形状の凹部として構わない。
In FIG. 3A, the thin plate processing portion 2d is formed in a strip shape by the strip processing jig 11d, and the bottom surface of the thin plate processing portion 2d is flat.
In FIG.3 (b), the thin plate process part 2e is formed in strip | belt shape with the hemispherical processing jig | tool 11e, and the bottom face is hemispherical. The strip shape is not limited to this, and may be a concave portion having any shape as long as it has an area capable of forming a plurality of weld locations.

薄板加工部を帯状とすることにより、例えば、溶接する箇所が例えば10箇所ある場合には、点状の薄板加工部を10箇所を上部溶接板材に形成する必要があるが、図3に示したように帯状の薄板加工部2d、2eとすれば、1回の加工で薄板加工部2d、2eを形成できて、製造コストを低減できる。
また多数の点状の薄板加工部2a、2b、2cを形成する場合、同時に複数個の薄板加工部2a、2b、2cを形成することはできるが、この場合には溶接箇所が特定されてしまうので製品毎に異なる上部溶接板材1a、1b、1cが必要となり製造コストが高くなる。
By forming the thin plate processed portion into a strip shape, for example, when there are 10 locations to be welded, it is necessary to form 10 spot-shaped thin plate processed portions on the upper welded plate material as shown in FIG. Thus, if it is set as the strip | belt-shaped thin plate process parts 2d and 2e, the thin plate process parts 2d and 2e can be formed by one process, and manufacturing cost can be reduced.
Moreover, when forming many point-like thin-plate processed parts 2a, 2b, 2c, although several thin-plate processed parts 2a, 2b, 2c can be formed simultaneously, in this case, a welding location will be specified. Therefore, different upper welded plate materials 1a, 1b, and 1c are required for each product, which increases the manufacturing cost.

一方、図3の場合には、薄板加工部1d、1eの任意の箇所に溶接できるので製品が異なっても同一の上部溶接板材1d、1eが利用できるので製造コストを安くできる利点がある。尚、図中の4d、4eは上部溶接板材1d、1eに形成した凹部である。
図4は、ヒートスプレッダを有する半導体装置の要部断面図である。半導体チップ46の図示しない上部電極上に電気伝導と熱伝導に優れたNiめっき銅板のヒートスプレッダ33が半田48付けされ、このヒートスプレッダ33にNiめっき銅板の上部溶接板材(外部導出端子31)がレーザ溶接されている。また、表面回路パターン43もNiめっき銅板の上部溶接板材(外部導出端子31)がレーザ溶接されている。
On the other hand, in the case of FIG. 3, since welding can be performed at an arbitrary location of the thin plate processed portions 1d and 1e, the same upper welded plate materials 1d and 1e can be used even if the products are different, so that there is an advantage that manufacturing costs can be reduced. In the figure, 4d and 4e are concave portions formed in the upper welded plate materials 1d and 1e.
FIG. 4 is a cross-sectional view of a main part of a semiconductor device having a heat spreader. A heat spreader 33 made of a Ni-plated copper plate excellent in electrical conduction and heat conduction is soldered 48 on an upper electrode (not shown) of the semiconductor chip 46, and an upper welding plate material (external lead-out terminal 31) of the Ni-plated copper plate is laser welded to the heat spreader 33. Has been. The surface circuit pattern 43 is also laser-welded with an upper welded plate material (external lead-out terminal 31) of a Ni-plated copper plate.

上部溶接板材である外部導出端子31のレーザ光が照射される箇所は、図1に示すような表面側が凹部で裏面側が凸部の薄板加工部が施される。このような薄板加工部を設けることで、上部溶接部材である外部導出端子へのレーザ光の照射で発生した熱が下部溶接部材であるヒートスプレッダ33に過度に広がらず、比較的低いパワーで外部導出端子31とヒートスプレッダ33が適度の範囲で溶融して溶融・再凝固部33が形成されるため、スパッタの発生が抑えられ、所望の溶接面積が得られて強固な溶接強度が得られる。   As shown in FIG. 1, the surface of the external lead-out terminal 31, which is the upper welding plate material, is irradiated with a thin plate processed portion having a concave portion on the front side and a convex portion on the back side. By providing such a thin plate processed portion, the heat generated by the irradiation of the laser beam to the external lead terminal which is the upper welding member is not excessively spread to the heat spreader 33 which is the lower welding member, and the external lead is obtained with a relatively low power. Since the terminal 31 and the heat spreader 33 are melted in an appropriate range to form the melted / resolidified portion 33, the occurrence of spatter is suppressed, a desired welding area is obtained, and a strong welding strength is obtained.

外部導出端子31をヒートスプレッダ33にレーザ溶接した後で、半導体チップを含むセラミクス41の上部を樹脂モールド34する。この樹脂モールド34することでヒートスプレッダ33および外部導出端子31が固定化され、線熱膨張係数の大きな銅を材料として使用しても各部材の移動がなくヒートサイクルなどの過酷な熱ストレスが印加された場合でも、従来ゲルを用いていたときには確保できなかった溶接箇所の信頼性が確保できるようになった。   After the external lead-out terminal 31 is laser welded to the heat spreader 33, the upper part of the ceramics 41 including the semiconductor chip is resin-molded 34. By using this resin mold 34, the heat spreader 33 and the external lead-out terminal 31 are fixed, and even if copper having a large coefficient of linear thermal expansion is used as a material, each member does not move and severe heat stress such as heat cycle is applied. Even in such a case, it has become possible to ensure the reliability of the welded portion that could not be ensured when the gel was used conventionally.

尚、図中の42は裏面銅箔、43、44、45は表面回路パターン、47ははんだ、49はアルミワイヤである。   In the figure, 42 is a copper foil on the back surface, 43, 44 and 45 are front surface circuit patterns, 47 is solder, and 49 is an aluminum wire.

この発明の第1実施例のレーザ溶接方法を示す工程図であり、(a)は溶接前の上部、下部溶接板材の要部断面図、(b)は溶接後の上部、下部溶接板材の要部断面図BRIEF DESCRIPTION OF THE DRAWINGS It is process drawing which shows the laser welding method of 1st Example of this invention, (a) is principal part sectional drawing of the upper and lower welded plate material before welding, (b) is the principal of the upper and lower welded plate material after welding. Sectional view 薄板加工部を形成する方法であり、(a)は平面形状が四角形で底部が平坦な場合の図、(b)は平面形状が円形で底部が平坦な場合の図、(c)は平面形状が円形で底部が半球状の場合の図This is a method of forming a thin plate processed portion, (a) is a diagram when the planar shape is a square and the bottom is flat, (b) is a diagram when the planar shape is a circle and the bottom is flat, and (c) is a planar shape. When the circle is circular and the bottom is hemispherical 上側溶接板材の薄板加工部である凸部を帯状とした場合であり、(a)は凹部の底面が平坦な場合の図、同図(b)は凹部の底面が半球状の場合の図This is a case where the convex portion, which is a thin plate processed portion of the upper welded plate material, has a band shape, (a) is a diagram when the bottom surface of the concave portion is flat, and (b) is a diagram when the bottom surface of the concave portion is hemispherical. ヒートスプレッダを有する半導体装置の要部断面図Cross-sectional view of essential parts of a semiconductor device having a heat spreader 従来のレーザ溶接方法を示す工程図であり、(a)は溶接前の溶接板材の要部断面図、(b)は溶接後の溶接板材の要部断面図It is process drawing which shows the conventional laser welding method, (a) is principal part sectional drawing of the welded plate material before welding, (b) is principal part sectional drawing of the welded plate material after welding. レーザ光のパワーを大きくして溶接した場合の図Diagram of welding with increased laser beam power 従来のレーザ溶接方法を示す工程図であり、(a)は溶接前の上部、下部溶接板材の要部断面図、(b)は溶接後の上部、下部溶接板材の要部断面図It is process drawing which shows the conventional laser welding method, (a) is a principal part sectional view of the upper and lower welding plate material before welding, (b) is a principal part sectional view of the upper and lower welding plate material after welding. 従来のレーザ溶接方法を示す別の工程図であり、(a)は溶接前の溶接板材の要部断面図、(b)は溶接後の溶接板材の要部断面図It is another process figure which shows the conventional laser welding method, (a) is principal part sectional drawing of the welded plate material before welding, (b) is principal part sectional drawing of the welded plate material after welding.

符号の説明Explanation of symbols

1 上部溶接板材
2 薄板加工部
3 レーザ照射面
4 凹部
5 裏面
6 凸部
7 レーザ光
8 溶融・再凝固部
9 下部溶接板材
L1 上部溶接板材の厚さ
L2 薄板加工部の厚さ(最小箇所の厚さ)
L3 下部溶接板材の厚さ
D スポット径(焦点の直径)
S1 溶接面積
DESCRIPTION OF SYMBOLS 1 Upper welding plate material 2 Thin plate processing part 3 Laser irradiation surface 4 Concave part 5 Back surface 6 Convex part 7 Laser beam 8 Melting | melting / resolidification part 9 Lower welding plate material L1 Thickness of upper welding plate material L2 Thickness of thin plate processing part thickness)
L3 Lower weld plate thickness D Spot diameter (focus diameter)
S1 Welding area

Claims (6)

上部溶接板材と下部溶接板材を重ね合わせてレーザ溶接する方法において、レーザ光が照射される上部溶接板材に該上部溶接板材の厚さより薄い薄板加工部を形成し、該薄板加工部がレーザ光照射側に凹部、該凹部と対向する裏面側に凸部を有し、該凸部を前記下部溶接板材に接触させて前記上部溶接板材と前記下部溶接板材を重ね合わせ、前記レーザ光を前記凹部に照射して前記上部溶接板材と前記下部溶接板材をレーザ溶接することを特徴とするレーザ溶接方法。 In the laser welding method in which the upper welding plate and the lower welding plate are overlapped, a thin plate working portion thinner than the thickness of the upper welding plate is formed on the upper welding plate irradiated with laser light, and the thin plate working portion is irradiated with laser light. A concave portion on the side, and a convex portion on the back side opposite to the concave portion, the convex portion is brought into contact with the lower welding plate material, the upper welding plate material and the lower welding plate material are overlapped, and the laser beam is applied to the concave portion. Irradiating and laser welding the upper welded plate material and the lower welded plate material. 前記上部溶接板材と下部溶接板材の材質が、互いに低融点材料であることを特徴とする請求項1に記載のレーザ溶接方法。 The laser welding method according to claim 1, wherein the upper welding plate material and the lower welding plate material are low melting point materials. 前記低融点材料が、Niメッキ銅であることを特徴とする請求項2に記載のレーザ溶接方法。 The laser welding method according to claim 2, wherein the low melting point material is Ni plated copper. 前記薄板加工部の厚さが、前記上部溶接板材の前記薄板加工部が形成されない箇所の厚より薄いことを特徴とする請求項1〜3のいずれか一項に記載のレーザ溶接方法。 The laser welding method according to any one of claims 1 to 3, wherein a thickness of the thin plate processed portion is thinner than a thickness of a portion of the upper welded plate material where the thin plate processed portion is not formed. 前記薄板加工部の厚さが、1mm以下であることを特徴とする請求項4に記載のレーザ溶接方法。 The laser welding method according to claim 4, wherein a thickness of the thin plate processed portion is 1 mm or less. 前記下部溶接部材が少なくとも半導体装置のヒートスプレッダであり、前記上部溶接板材が前記半導体装置の外部導出端子であることを特徴とする請求項1〜5のいずれか一項に記載のレーザ溶接方法。 The laser welding method according to claim 1, wherein the lower welding member is at least a heat spreader of a semiconductor device, and the upper welding plate is an external lead-out terminal of the semiconductor device.
JP2006307327A 2006-11-14 2006-11-14 Laser welding method Active JP5040269B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006307327A JP5040269B2 (en) 2006-11-14 2006-11-14 Laser welding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006307327A JP5040269B2 (en) 2006-11-14 2006-11-14 Laser welding method

Publications (2)

Publication Number Publication Date
JP2008119729A true JP2008119729A (en) 2008-05-29
JP5040269B2 JP5040269B2 (en) 2012-10-03

Family

ID=39505051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006307327A Active JP5040269B2 (en) 2006-11-14 2006-11-14 Laser welding method

Country Status (1)

Country Link
JP (1) JP5040269B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011125928A (en) * 2009-12-15 2011-06-30 Sung Woo Hitech Co Ltd Laser welding method for steel sheet
WO2013118422A1 (en) * 2011-06-29 2013-08-15 日産自動車株式会社 Semiconductor device
WO2015159503A1 (en) * 2014-04-15 2015-10-22 パナソニックIpマネジメント株式会社 Joined body of dissimilar metals
JP2019079905A (en) * 2017-10-24 2019-05-23 三菱電機株式会社 Semiconductor device and semiconductor device manufacturing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09108874A (en) * 1995-10-13 1997-04-28 Matsushita Electric Works Ltd Laser welding method
JPH11185838A (en) * 1997-12-24 1999-07-09 Harness Syst Tech Res Ltd Laser welding structure
JPH11215652A (en) * 1998-01-23 1999-08-06 Harness Syst Tech Res Ltd Laser welding structure of bus-bar
JP2001045634A (en) * 1999-08-02 2001-02-16 Sumitomo Wiring Syst Ltd Junction structure of circuit conductor in junction block
JP2003225785A (en) * 2002-01-31 2003-08-12 Valeo Electronique & Systems De Liaison Method and apparatus for welding electric-conductive body onto substrate
JP2005071465A (en) * 2003-08-25 2005-03-17 Nhk Spring Co Ltd Metal plate welded structure and head suspension

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09108874A (en) * 1995-10-13 1997-04-28 Matsushita Electric Works Ltd Laser welding method
JPH11185838A (en) * 1997-12-24 1999-07-09 Harness Syst Tech Res Ltd Laser welding structure
JPH11215652A (en) * 1998-01-23 1999-08-06 Harness Syst Tech Res Ltd Laser welding structure of bus-bar
JP2001045634A (en) * 1999-08-02 2001-02-16 Sumitomo Wiring Syst Ltd Junction structure of circuit conductor in junction block
JP2003225785A (en) * 2002-01-31 2003-08-12 Valeo Electronique & Systems De Liaison Method and apparatus for welding electric-conductive body onto substrate
JP2005071465A (en) * 2003-08-25 2005-03-17 Nhk Spring Co Ltd Metal plate welded structure and head suspension

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011125928A (en) * 2009-12-15 2011-06-30 Sung Woo Hitech Co Ltd Laser welding method for steel sheet
WO2013118422A1 (en) * 2011-06-29 2013-08-15 日産自動車株式会社 Semiconductor device
WO2015159503A1 (en) * 2014-04-15 2015-10-22 パナソニックIpマネジメント株式会社 Joined body of dissimilar metals
JP2015211981A (en) * 2014-04-15 2015-11-26 パナソニックIpマネジメント株式会社 Dissimilar metal joint body
EP3132884A4 (en) * 2014-04-15 2017-03-08 Panasonic Intellectual Property Management Co., Ltd. Joined body of dissimilar metals
JP2019079905A (en) * 2017-10-24 2019-05-23 三菱電機株式会社 Semiconductor device and semiconductor device manufacturing method
DE102018217231B4 (en) 2017-10-24 2024-01-25 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
JP5040269B2 (en) 2012-10-03

Similar Documents

Publication Publication Date Title
CN108465933B (en) Method and device for laser welding of foil and tab
JP4924771B2 (en) Laser welding method and battery manufacturing method including the same
JP6784232B2 (en) Welding method of laminated metal foil
CN211903865U (en) Vapor chamber
JP5040269B2 (en) Laser welding method
JP6238766B2 (en) Welding equipment
JP2008282834A (en) Manufacturing method of semiconductor device
JP2008066561A (en) Method of manufacturing semiconductor device
JP2008028286A (en) Method for manufacturing semiconductor device
JP2010075967A (en) Method for welding different kind of metal
US8871049B2 (en) Method of manufacturing resistor
JP2008194707A (en) Laser welding tool, and method of manufacturing semiconductor device by using the same
CN111001930A (en) Method and apparatus for laser welding
US11123817B2 (en) Method of welding laminated metal foils
JP2001198689A (en) Method of laser welding for aluminum material
JP5453720B2 (en) Laser welding method, semiconductor device and manufacturing method thereof
CN117062687A (en) Laser welding a metal foil stack to a metal substrate
JP2012252935A (en) Semiconductor device for electricity
JP5239187B2 (en) Laser welding member and laser welding method
JP2010082673A (en) Laser beam welding member and laser beam welding method
JP2020093285A (en) Method of joining dissimilar metals
CN114502315A (en) Welding device and method for welding at least two components
JP2010051989A (en) Laser joining method
CN111390386A (en) Laser stitch welding method compatible with material pressing gap
JP2007326125A (en) High conductive workpiece to be welded and resistance welding method therefor

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20081216

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20090219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090914

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20091112

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20110422

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110930

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120612

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120625

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5040269

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150720

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250