JP2008109110A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2008109110A
JP2008109110A JP2007243405A JP2007243405A JP2008109110A JP 2008109110 A JP2008109110 A JP 2008109110A JP 2007243405 A JP2007243405 A JP 2007243405A JP 2007243405 A JP2007243405 A JP 2007243405A JP 2008109110 A JP2008109110 A JP 2008109110A
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JP
Japan
Prior art keywords
thin film
electrode
film transistor
electrically connected
drain electrode
Prior art date
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Withdrawn
Application number
JP2007243405A
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English (en)
Japanese (ja)
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JP2008109110A5 (enExample
Inventor
Atsushi Hirose
篤志 広瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007243405A priority Critical patent/JP2008109110A/ja
Publication of JP2008109110A publication Critical patent/JP2008109110A/ja
Publication of JP2008109110A5 publication Critical patent/JP2008109110A5/ja
Withdrawn legal-status Critical Current

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JP2007243405A 2006-09-29 2007-09-20 半導体装置 Withdrawn JP2008109110A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007243405A JP2008109110A (ja) 2006-09-29 2007-09-20 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006268854 2006-09-29
JP2007243405A JP2008109110A (ja) 2006-09-29 2007-09-20 半導体装置

Publications (2)

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JP2008109110A true JP2008109110A (ja) 2008-05-08
JP2008109110A5 JP2008109110A5 (enExample) 2010-10-14

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ID=39442166

Family Applications (1)

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JP2007243405A Withdrawn JP2008109110A (ja) 2006-09-29 2007-09-20 半導体装置

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JP (1) JP2008109110A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009047688A (ja) * 2007-07-25 2009-03-05 Semiconductor Energy Lab Co Ltd 光電変換装置及びその光電変換装置を具備する電子機器
CN113491016A (zh) * 2019-02-27 2021-10-08 特里纳米克斯股份有限公司 用于光学检测的光学传感器和检测器
JPWO2022065212A1 (enExample) * 2020-09-24 2022-03-31

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009047688A (ja) * 2007-07-25 2009-03-05 Semiconductor Energy Lab Co Ltd 光電変換装置及びその光電変換装置を具備する電子機器
US8913050B2 (en) 2007-07-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
CN113491016A (zh) * 2019-02-27 2021-10-08 特里纳米克斯股份有限公司 用于光学检测的光学传感器和检测器
JP2022522010A (ja) * 2019-02-27 2022-04-13 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出のための光センサ及び検出器
JP7528109B2 (ja) 2019-02-27 2024-08-05 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出のための光センサ及び検出器
CN113491016B (zh) * 2019-02-27 2025-10-17 特里纳米克斯股份有限公司 用于光学检测的光学传感器和检测器
JPWO2022065212A1 (enExample) * 2020-09-24 2022-03-31
WO2022065212A1 (ja) * 2020-09-24 2022-03-31 パナソニックＩｐマネジメント株式会社 撮像装置

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