JP2008092401A - Oscillation device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problems that current consumption is large and the amplitude of an oscillation signal is small. <P>SOLUTION: An oscillation device includes a first NPN type transistor, a second NPN type transistor, a crystal vibrator, a first resistor, a first capacitor, and a second capacitor. The emitter of the first NPN type transistor is connected substantially to a ground potential, the collector of the second NPN transistor is connected substantially to a power supply potential, and the base of the first NPN type transistor is connected to the emitter of the second NPN type transistor. The crystal vibrator and first resistor are connected in parallel to each other between the collector of the first NPN type transistor and the base of the second NPN type transistor, the first capacitor is connected between the collector of the first NPN type transistor and the power supply potential, and the second capacitor is connected between the base and emitter of the second NPN type transistor. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an oscillation device including a bipolar transistor that can operate at a low voltage.

  As shown in FIG. 28, a conventional oscillation device OSC100 includes an oscillation unit U101 (corresponding to a “piezoelectric oscillator” described in Patent Document 1 below) that generates an oscillation signal OS having an oscillation frequency f, and the oscillation. And an output unit U102 for taking out and outputting the oscillation signal OS from the unit U101.

  The oscillation unit U101 includes a first NPN transistor TR101 and a second NPN transistor TR102 in order to generate the oscillation signal OS.

  The first NPN transistor TR101 has a base connected to the emitter of the second NPN transistor TR102 and a collector to stabilize the base voltage of the second NPN transistor TR102, that is, the base current. The base voltage of the second NPN transistor TR102 is substantially connected to the base of the second NPN transistor TR102, thereby changing the base voltage of the second NPN transistor TR102 in accordance with the variation of the emitter voltage of the second NPN transistor TR102. .

  The second NPN transistor TR102 has its collector connected directly to the power supply potential Vcc (eg 3V, 5V) so that the oscillation signal OS can be generated at a low voltage (eg 3V, 5V). ing.

  In the oscillation unit U101 having such a configuration, a current for generating the oscillation signal OS flows as indicated by an arrow in FIG.

  On the other hand, the output unit U102 has a buffer function, and the third NPN transistor TR103 whose emitter is grounded outputs the oscillation signal OS from the output terminal OUT.

  FIG. 29 shows the result of actual measurement of the negative resistance (impedance when the circuit side is viewed from both ends of the crystal resonator) of the conventional oscillation device described above. In the case of C101 = 10 pF, C102 = 20 pF, R101 = 2.2 kΩ, R102 = 10 kΩ, R103 = 1 kΩ, for example, when the power supply potential Vcc = 2.0 V, the oscillation device OSC100 has The negative resistance Rbci is 620Ω (absolute value), which is a value sufficient to perform the oscillation.

JP 2004-48631 A

  It is known that the magnitude of the negative resistance Rbci is approximately directly proportional to the magnitude of the mutual conductance gm of the second NPN transistor TR102. That is, in order to increase the mutual conductance gm, the circuit current shown by the arrow in FIG. 28 must be increased. However, when the circuit current is increased, the current consumption of the oscillation device OSC100 increases as shown in FIG. For example, when the power supply potential Vcc = 2.0V, a current of 1.8 mA is consumed.

  In the oscillation unit U101, only the second NPN transistor TR102 contributes to the generation of the oscillation signal OS, and the first NPN transistor TR101 does not contribute to the generation of the oscillation signal OS. However, as shown in FIG. 31, when the power supply potential Vcc = 2.0 V, it is 560 mVpp (peak to peak), and the output voltage is limited to a relatively small value.

In order to solve the above-described problem, the first oscillation device according to the present invention is:
A first NPN transistor;
A second NPN transistor;
A crystal unit,
A first resistor;
A first capacitor;
A second capacitor;
The emitter of the first NPN transistor is substantially connected to ground potential;
A collector of the second NPN transistor is substantially connected to a power supply potential;
A base of the first NPN transistor and an emitter of the second NPN transistor are connected;
The crystal resonator and the first resistor are connected in parallel between the collector of the first NPN transistor and the base of the second NPN transistor,
The first capacitor is connected AC between the collector of the first NPN transistor and the power supply potential,
The second capacitor is connected between a base and an emitter of the second NPN transistor.

The first oscillation device according to the present invention described above is
A third capacitor;
The third capacitor is connected between the base and emitter of the first NPN transistor.

The first oscillation device according to the present invention described above is
A second resistor;
The second resistor is connected between the collector of the first NPN transistor and the power supply potential.

A second oscillation device according to the present invention includes:
A first NPN transistor;
A second NPN transistor;
A crystal unit,
A first resistor;
A first capacitor;
A second capacitor;
An emitter of the first NPN transistor is connected to a power supply potential;
A collector of the second NPN transistor is connected to a ground potential;
A base of the first NPN transistor and an emitter of the second NPN transistor are connected;
The crystal resonator is connected between a base and a collector of the first NPN transistor,
The first resistor is between the collector of the first NPN transistor and the base of the second NPN transistor, or between the base of the first NPN transistor and the second NPN transistor. Connected between the emitters,
The first capacitor is connected AC between the collector of the first NPN transistor and the power supply potential,
The second capacitor is connected between a base and an emitter of the second NPN transistor.

The first and second oscillation devices according to the present invention described above are
A second resistor;
The second resistor is connected between the collector of the first NPN transistor and the power supply potential.

  According to the first and second oscillation devices according to the present invention, the first NPN transistor, the second NPN transistor, the crystal resonator, the first resistor, and the first resistor Since the first capacitor and the second capacitor have the connection relationship as described above, the current consumption can be reduced and the amplitude of the oscillation signal can be increased as compared with the conventional oscillation device. It becomes possible.

  Embodiments of an oscillation device according to the present invention will be described with reference to the drawings.

Example 1
FIG. 1 shows the configuration of the oscillation device according to the first embodiment. As shown in FIG. 1, the oscillation device OSC1 according to the first embodiment includes a first NPN transistor TR1, a second NPN transistor TR2, a first impedance Z1, a second impedance Z2, and a first impedance Z2. 3 impedance Z3 and 4th impedance Z4.

  Here, the main characteristic points of the first embodiment are the connection related to the first NPN transistor TR1 and the connection related to the first impedance Z1. Further, as described later, since the second impedance Z2 naturally exists due to the impedance (internal impedance) between the base and emitter of the first NPN transistor TR1, the base of the first NPN transistor TR1 and the second impedance Z2 It is not necessary to attach externally between the emitters.

  For the purpose of operating at a low voltage, the emitter of the first NPN transistor TR1 is directly connected to the ground potential GND. The collector of the NPN transistor TR2 is directly connected to the power supply potential Vcc. In addition, in order to stabilize the base current of the second NPN transistor TR2, the base of the first NPN transistor TR1 and the emitter of the second NPN transistor TR2 are connected, and the first NPN transistor The collector of the type transistor TR1 and the base of the second NPN type transistor TR2 are connected.

  The first impedance Z1 is connected between the collector of the first NPN transistor TR1 and the base of the second NPN transistor TR2, and the second impedance Z2 is the base of the first NPN transistor TR1. The third impedance Z3 is connected between the base and the emitter of the second NPN transistor TR2, and the fourth impedance Z4 is connected to the collector of the first NPN transistor TR1 and the power supply potential. Connected between Vcc.

  FIG. 2 shows an equivalent circuit of the oscillation device according to the first embodiment. As shown in FIG. 2, the equivalent circuit OSC1 (eq) of the oscillation device OSC1 according to the first embodiment has a function of the first NPN transistor TR1 and supplies a current (gm × Z2 × i2). CC1, a constant current source CC2 having the function of the second NPN transistor TR2 and supplying a current (gm × Z3 × i1), and first to fourth impedances Z1 to Z4.

  FIG. 3 shows a detailed equivalent circuit of the first embodiment of the oscillation device according to the present invention. As shown in FIG. 3, the detailed equivalent circuit OSC1 (eq_dt) of the oscillation device OSC1 of the first embodiment includes a crystal resonator X (impedance zxt) and a resistor connected in parallel to each other. The second impedance Z2 is composed of a resistor R2, a capacitor C2, and an internal resistance Rπ and an internal capacitance Cπ between the base and emitter of the first NPN transistor TR1 connected in parallel with each other. The third impedance Z3 is composed of a capacitor C3, an internal resistance Rπ between the base and emitter of the second NPN transistor TR2, and an internal capacitance Cπ, which are connected in parallel to each other. The impedance Z4 is composed of a resistor R4 and a capacitor C4 connected in parallel to each other.

  When Kirchhoff's law is applied to the detailed equivalent circuit OSC1 (eq_dt) of the oscillation device OSC1, Equations (1), (2), (3), and (4) are obtained from the relationship between current and voltage. It is done.

（１）式〜（４）式を整理すると、（５）式が得られる。

When the formulas (1) to (4) are arranged, the formula (5) is obtained.

（５）式中のＺ１〜Ｚ５は、（６）式で与えられ、（５）式中のｒ２、ｃ２、ｒ４、ｃ４、ｒ５、ｃ５は、（７）式で与えられる。

Z1 to Z5 in the formula (5) are given by the formula (6), and r2, c2, r4, c4, r5, c5 in the formula (5) are given by the formula (7).

水晶振動子Ｘを除く、詳細な等価回路ＯＳＣ１（ｅｑ＿ｄｔ）の回路抵抗をＲｃｉとし、容量性リアクタンスをＣｃｉとすると、（５）式は、（８）式に置き換えることができる。

If the circuit resistance of the detailed equivalent circuit OSC1 (eq_dt) excluding the crystal resonator X is Rci and the capacitive reactance is Cci, the equation (5) can be replaced with the equation (8).

（８）式中のＲｃｉ、Ｃｃｉは、（９）式により与えられ、また、（８）式中のｒａ、ｘａ、ｒｂ、ｘｂ、ｒｓ、ｘｓ、ｒｔ、ｘｔは、（１０）式により与えられる。

Rci and Cci in equation (8) are given by equation (9), and ra, xa, rb, xb, rs, xs, rt, and xt in equation (8) are given by equation (10). It is done.

図４は、実施例１の発振装置の具体的回路を示したものである。図１と図４との比較から明らかなように、具体的回路ＯＳＣ１（ｅｍｂ１）では、第１のインピーダンスＺ１は、相互に並列接続された水晶振動子Ｘ及び抵抗器Ｒ１により構成され、第２のインピーダンスＺ２は、「外付け素子」としては存在せず（内部的には存在する。）、第３のインピーダンスＺ３は、キャパシタＣ３により構成され、第４のインピーダンスＺ４は、相互に並列接続された、抵抗器Ｒ４及びキャパシタＣ４により構成されている。なお、キャパシタＣ４は、第１のＮＰＮ型トランジスタＴＲ１のコレクタ及びエミッタ間に接続されているものの、交流的には、キャパシタＣｐ（電源−ＧＮＤ間を交流的に短絡する素子）を介して抵抗器Ｒ４と並列接続されていることと等価である。

FIG. 4 shows a specific circuit of the oscillation device according to the first embodiment. As is clear from the comparison between FIG. 1 and FIG. 4, in the specific circuit OSC1 (emb1), the first impedance Z1 is constituted by the crystal resonator X and the resistor R1 connected in parallel to each other, and the second impedance Z1 The impedance Z2 does not exist as an “external element” (it exists internally), the third impedance Z3 is constituted by the capacitor C3, and the fourth impedance Z4 is connected in parallel to each other. The resistor R4 and the capacitor C4 are included. The capacitor C4 is connected between the collector and the emitter of the first NPN transistor TR1, but in terms of AC, a resistor is connected via a capacitor Cp (an element that short-circuits between the power source and GND). Equivalent to being connected in parallel with R4.

  Here, the capacitor C4 is an element necessary for an AC operation (oscillation operation), and the resistor R4 is an element required for a DC operation (transistor bias setting). . The capacitor Cp is a bypass capacitor (pass capacitor), and the capacitor Cc is a coupling capacitor.

  5, FIG. 6 and FIG. 7 show experimental results of a specific circuit of the first embodiment of the oscillation device according to the present invention. In the specific circuit OSC1 (emb1) described above, when the frequency f of the crystal resonator X is 10 MHz, the resistor R1 = 20 kΩ, the resistor R4 = 2 kΩ, the capacitor C3 = C4 = 22 pF, and Cp = Cc = 0.1 μF, When the power supply voltage Vcc = 2.0V, the negative resistance Rbci is 1200Ω (absolute value), the current consumption of the specific circuit OSC1 (emb1) is 950 μA, and the amplitude of the oscillation signal OS is 2000 mVpp. . That is, as compared with the conventional oscillation device OSC100, the operation at a low voltage of 2.0V can be maintained as in the conventional oscillation device OSC100. On the other hand, unlike the conventional oscillation device OSC100, the negative resistance Rbci can be increased from 620Ω to 1200Ω, the current consumption can be decreased from 1800 μA to 950 μA, and the amplitude of the oscillation signal OS can be increased from 560 mVpp to 2000 mVpp.

  As shown in FIG. 6, the specific circuit OSC1 (emb1) of the oscillation device OSC1 has a frequency deviation df / f of the oscillation signal OS of 50 ppm in the range of the power supply potential Vcc from 1.5V to 3.0V. Therefore, it can oscillate relatively stably.

  Further, in the specific circuit OSC1 (emb1) of the oscillation device OSC1, the oscillation signal OS has a waveform close to a sine wave with relatively little distortion, as shown in FIG.

<< Modification of Example 1 >>
FIG. 8 illustrates another specific circuit of the oscillation device according to the first embodiment. The other specific circuit OSC1 (emb2) illustrated in FIG. 8 has a configuration similar to that of the specific circuit OSC1 (emb1) illustrated in FIG. 4, and in addition, the first impedance Z2 is the first impedance Z2. A capacitor C2 is provided between the base and emitter of the NPN transistor TR1.

  9, FIG. 10 and FIG. 11 show experimental results of other specific circuits of the oscillation device of the first embodiment. In the specific circuit OSC1 (emb2), the frequency f of the crystal unit X = 10 MHz, the resistor R1 = 470 kΩ, the resistor R4 = 2 kΩ, the capacitor C3 = C4 = 22 pF, the capacitor C2 = 20 pF, Cp = Cc = 0.1 μF. In this case, when the power supply potential Vcc = 2.0V, the negative resistance Rbci is 850Ω (absolute value), the current consumption of the specific circuit OSC1 (emb2) is 700 μA, and the amplitude of the oscillation signal OS is 1100 mVpp. That is, compared with the specific circuit OSC1 (emb1) described above, the current consumption and the amplitude of the oscillation signal OS are substantially the same, but the negative resistance Rbci is slightly inferior.

  However, as shown in FIG. 10, the specific circuit OSC1 (emb2) has a frequency deviation df / f of the oscillation signal OS in the range of the power supply potential Vcc from 1.5V to 3.0V. Therefore, it is possible to oscillate more stably than the above-described specific circuit OSC1 (emb1).

  In the specific circuit OSC1 (emb2), in addition, the oscillation signal OS has a sine wave with less distortion than the specific circuit OSC1 (emb1) shown in FIG. 7, as shown in FIG. A waveform approximately equal to is obtained.

Example 2
FIG. 12 shows the configuration of the second embodiment of the oscillation device according to the present invention. As shown in FIG. 12, the oscillation device OSC2A according to the second embodiment includes a first NPN transistor TR1, a second NPN transistor TR2, a first impedance Z1, a second impedance Z2, and a second impedance Z2. 3 impedance Z3, 4th impedance Z4, and 5th impedance Z5. Here, the main characteristic points of the oscillation device OSC2 of Example 2A are the connection relating to the first NPN transistor TR1 and the connection relating to the third impedance Z3.

  In the oscillation device OSC2A according to the second embodiment, the emitter of the first NPN transistor TR1 is directly connected to the ground potential GND for the purpose of operating at a low voltage, similarly to the oscillation device OSC1 according to the first embodiment. The collector of the second NPN transistor TR2 is directly connected to the power supply potential Vcc. Further, in order to stabilize the base current of the second NPN transistor TR2, the base of the first NPN transistor TR1 and the emitter of the second NPN transistor TR2 are connected, and the first NPN transistor TR2 is connected. The collector of the transistor TR1 and the base of the second NPN transistor TR2 are substantially connected.

  As for the first to fifth impedances Z1 to Z5, the first impedance Z1 is connected between the collector and the base of the first NPN transistor TR1, and the second impedance Z2 is the first NPN transistor. The third impedance Z3 is connected between the base and the emitter of the transistor TR1, and the third impedance Z3 is connected between the collector of the first NPN transistor TR1 and the base of the second NPN transistor TR2. Z4 is connected between the collector of the first NPN transistor TR1 and the power supply potential Vcc, and the fifth impedance Z5 is connected between the base and emitter of the second NPN transistor TR2.

  FIG. 13 shows an equivalent circuit of the second embodiment of the oscillation device according to the present invention. As shown in FIG. 13, an equivalent circuit OSC2A (eq) of the oscillation device OSC2A according to the second embodiment has a function of the first NPN transistor TR1 and supplies a current (gm × Z2 × i2). CC1, a constant current source CC2 having the function of the second NPN transistor TR2 and supplying a current (gm × Z3 × i5), and a first impedance Z1 made of a crystal resonator X are connected in parallel to each other. In addition, a second impedance Z2 composed of an internal resistance Rπ and an internal capacitance Cπ between the base and emitter of the capacitor C2 and the first NPN transistor TR1 and a third impedance Z3 composed of a resistor R3 are parallel to each other. A fourth impedance Z4 comprising a connected capacitor C4 and resistor R4, and a capacitor C5 and a second NP connected in parallel with each other Represented by a fifth impedance Z5 comprising the internal resistance Rπ and internal capacitance Cπ between the base and emitter of the type transistor TR2.

  When Kirchoff's law is applied to the equivalent circuit OSC2A (eq) of the second embodiment, Expressions (11) to (15) are obtained from the relationship between current and voltage.

上記の（１１）式〜（１５）式を整理すると、（１６）式が得られる。

By arranging the above equations (11) to (15), equation (16) is obtained.

（１６）式中のＺ１〜Ｚ５は、上記した（６）式で与えられ、（１５）式中のｒ２、ｃ２、ｒ４、ｃ４、ｒ５、ｃ５は、上記した（７）式で与えられる。

Z1 to Z5 in the formula (16) are given by the above formula (6), and r2, c2, r4, c4, r5, and c5 in the formula (15) are given by the above formula (7).

  When the circuit resistance Rci and the capacitive reactance Cci of the equivalent circuit OSC2A (eq) are used, the expression (16) can be replaced with the expression (17).

（１７）式中のＲｃｉ、Ｃｃｉは、（１８）式により与えられ、また、（１７）式中のｒａ、ｘａ、ｒｂ、ｘｂ、ｒｓ、ｘｓ、ｒｔ、ｘｔは、（１９）式により与えられる。

Rci and Cci in the equation (17) are given by the equation (18), and ra, xa, rb, xb, rs, xs, rt, and xt in the equation (17) are given by the equation (19). It is done.

図１４は、本発明に係る発振装置の実施例２の具体的回路を示したものである。発振装置ＯＳＣ２Ａの具体的回路ＯＳＣ２Ａ（ｅｍｂ）では、図１４に示されるように、第１のインピーダンスＺ１は、水晶振動子Ｘから構成され、第２のインピーダンスＺ２は、キャパシタＣ２から構成され、第３のインピーダンスＺ３は、抵抗器Ｒ３から構成され、第４のインピーダンスＺ４は、交流的に相互に並列接続された、抵抗器Ｒ４及びキャパシタＣ４から構成され、第５のインピーダンスＺ５は、キャパシタＣ５から構成されている。

FIG. 14 shows a specific circuit of the second embodiment of the oscillation device according to the present invention. In the specific circuit OSC2A (emb) of the oscillation device OSC2A, as shown in FIG. 14, the first impedance Z1 is composed of the crystal resonator X, the second impedance Z2 is composed of the capacitor C2, The third impedance Z3 is composed of the resistor R3, the fourth impedance Z4 is composed of the resistor R4 and the capacitor C4 connected in parallel with each other in an alternating manner, and the fifth impedance Z5 is derived from the capacitor C5. It is configured.

  Here, the capacitor C4 is an element necessary for an AC operation (oscillation operation), and the resistor R4 is an element required for a DC operation (transistor bias setting). .

  15, FIG. 16, and FIG. 17 show experimental results of specific circuits of the oscillation device of the second embodiment. In the specific circuit OSC2A (emb) of the oscillation device OSC2A described above, the frequency f of the crystal unit X = 10 MHz, the resistor R3 = 100 kΩ, the resistor R4 = 12 kΩ, the capacitor C3 = C4 = 22 pF, C5 = 0 pF, Cp = In the case of 0.1 μF and Cc = 33 μF, when the power supply potential Vcc = 2.0 V, the negative resistance Rbci is 600Ω (absolute value), and the current consumption of the specific circuit OSC2A (emb) is 200 μA. The amplitude of the oscillation signal OS is 1000 mVpp. That is, as compared with the conventional oscillation device OSC100, as in the conventional oscillation device OSC100, the operation at a low voltage of 2.0 V is maintained and the negative resistance Rbci is maintained at a value that can oscillate. On the other hand, unlike the conventional oscillation device OSC100, the current consumption can be reduced from 1800 μA to 200 μA, and the amplitude of the oscillation signal OS can be increased from 560 mVpp to 1000 mVpp.

  As shown in FIG. 16, the specific circuit OSC2A (emb) of the oscillation device OSC2A suppresses the frequency deviation of the oscillation signal OS within 5 ppm in the range of the power supply potential Vcc from 1.5V to 3.0V. Therefore, it can oscillate extremely stably.

  In the specific circuit OSC2A (emb) of the oscillation device OSC2A, the oscillation signal OS has a waveform substantially equal to a sine wave with little distortion, as shown in FIG.

<< Modification of Example 2 >>
18 shows a configuration of a modification of the second embodiment of the oscillation device according to the present invention, FIG. 19 shows an equivalent circuit thereof, and FIG. 20 shows a specific circuit thereof. As shown in FIGS. 18 and 19, the oscillation device OSC2B according to the modification of the second embodiment is similar to the oscillation device OSC2A of the second embodiment, and includes a first NPN transistor TR1 and a second NPN transistor TR2. A first impedance Z1, a second impedance Z2, a third impedance Z3, a fourth impedance Z4, and a fifth impedance Z5.

  In the oscillation device OSC2B of the modified example, as is clear from the comparison between FIGS. 12 and 18, the comparison between FIGS. 13 and 19, and the comparison between FIGS. 14 and 20, the first, second, fourth, The fifth impedances Z1, Z2, Z4, and Z5 are connected to positions similar to those of the oscillation device OSC2A. On the other hand, the third impedance Z3 is only the insertion position of the oscillation device OSC2A of the second embodiment. Are connected between the base of the first NPN transistor TR1 and the emitter of the second NPN transistor TR2 instead of between the collector of the first NPN transistor TR1 and the base of the second NPN transistor TR2. ing.

  The circuit resistance Rci and the capacitive reactance Cci of the equivalent circuit OSC2B (eq) of the modified example are expressed by the equation (18) similarly to the equivalent circuit OSC2A (eq) of the second embodiment.

  21, FIG. 22, and FIG. 23 show experimental results of specific circuits of modifications of the second embodiment of the oscillation device according to the present invention. In the specific circuit OSC2B (emb) of the oscillation device OSC2B described above, the frequency f of the crystal resonator X is f = 10 MHz, the resistor R3 = 100 kΩ, the resistor R4 = 12 kΩ, the capacitor C3 = C4 = 22 pF, C5 = 0 pF, Cp = In the case of 0.1 μF and Cc = 33 μF, when the power supply potential Vcc = 2.0 V, the negative resistance Rbci is 250Ω (absolute value), and the consumption current of the specific circuit OSC2B (emb) is 100 μA. The amplitude of the oscillation signal OS is 1000 mVpp. That is, as compared with the conventional oscillation device OSC100, as in the conventional oscillation device OSC100, the operation at a low voltage of 2.0 V is maintained and the negative resistance Rbci is maintained at a value that can oscillate. On the other hand, unlike the conventional oscillation device OSC100, the current consumption can be reduced from 1800 μA to 100 μA, and the amplitude of the oscillation signal OS can be increased from 560 mVpp to 1000 mVpp.

  As shown in FIG. 22, the specific circuit OSC2B (emb) of the oscillation device OSC2B can suppress the frequency deviation of the oscillation signal OS within 3 ppm in the range of the power supply potential Vcc from 2V to 3.0V. Therefore, it can oscillate very stably.

  Further, in the specific circuit OSC2B (emb) of the oscillation device OSC2B, the oscillation signal OS has a waveform almost similar to a sine wave with relatively little distortion, as shown in FIG.

<< Other Modifications of Embodiments 1 and 2 >>
Another modification of the oscillation devices of the first and second embodiments will be described.

<Another Modification of Example 1>
As shown in FIGS. 24 to 27, the oscillation devices OSC1p (1) and OSC1p (2) of another modification example of the first embodiment, and the oscillation device OSC2p (1) of another modification example of the second embodiment, The OSC 2p (2) uses a PNP transistor instead of the NPN transistor used in the oscillation devices OSC1, OSC2A, and OSC2B of the first and second embodiments.

  More specifically, as shown in FIG. 24, the oscillation device OSC1p (1) is different from the oscillation device OSC1 of the first embodiment, and includes a third PNP transistor TR3 instead of the first NPN transistor TR1, And a fourth PNP transistor TR4 instead of the second NPN transistor TR2.

  In order to enable operation at a low voltage, the emitter of the third PNP transistor TR3 is connected to the power supply potential Vcc, and the collector of the fourth PNP transistor TR4 is connected to the ground potential GND. Has been. In addition, in order to stabilize the base current of the fourth PNP transistor TR4, the base of the third PNP transistor TR3 and the emitter of the fourth PNP transistor TR4 are connected, and the third PNP transistor TR4 is connected. The collector of TR3 and the base of the fourth PNP transistor TR4 are substantially connected.

  In addition, the oscillation device OSC1p (1) has a first impedance Z1 (resistor R1 and crystal resonator X), a third impedance Z3 (capacitor C3), and a fourth impedance, similarly to the oscillation device OSC1 of the first embodiment. Impedance Z4 (resistor R4).

  The first impedance Z1 is connected between the collector of the third PNP transistor TR3 and the base of the fourth PNP transistor TR4, and the third impedance Z3 is the base of the fourth PNP transistor TR4 and The fourth impedance Z4 is connected between the emitters, and is connected between the collector of the third PNP transistor TR3 and the ground potential GND. As shown in FIG. 25, the base of the third PNP transistor TR3 and the ground potential GND are used as the second impedance Z2, similarly to the modification OSC1 (emb2) of the first embodiment shown in FIG. A capacitor C2 may be connected between them.

<Another Modification of Example 2>
Further, as shown in FIG. 26, the oscillation device OSC2p (1) of the modification of the second embodiment is different from the oscillation device OSC2A of the second embodiment, and is a third PNP transistor that replaces the first NPN transistor TR1. TR3 and a fourth PNP transistor TR4 instead of the second NPN transistor TR2.

  In order to enable operation at a low voltage, the emitter of the third PNP transistor TR3 is connected to the power supply potential Vcc, and the collector of the fourth PNP transistor TR4 is connected to the ground potential GND. Has been. In addition, in order to stabilize the base current of the fourth PNP transistor TR4, the base of the third PNP transistor TR3 and the emitter of the fourth PNP transistor TR4 are connected, and the third PNP transistor TR4 is connected. The collector of the type transistor TR3 and the base of the fourth PNP type transistor TR4 are substantially connected.

  In addition, the oscillation device OSC2p (1), like the oscillation device OSC2A of the second embodiment, has a first impedance Z1 (quartz crystal X), a second impedance Z2 (capacitor C2), and a third impedance Z3 ( A resistor R3), a fourth impedance Z4 (resistor R4 and capacitor C4), and a fifth impedance Z5 (capacitor C5).

  The first impedance Z1 is connected between the collector and the base of the third PNP transistor TR3, and the second impedance Z2 is connected between the base of the third PNP transistor TR3 and the ground potential GND. The third impedance Z3 is connected between the collector of the third PNP transistor TR3 and the base of the fourth PNP transistor TR4, and the fourth impedance Z4 is connected to the third PNP transistor TR3. The fifth impedance Z5 is connected between the collector and the ground potential GND, and is connected between the emitter and the base of the fourth PNP transistor TR4.

  As shown in FIG. 27, as with the oscillation device OSC2B of the modification of the second embodiment shown in FIG. 18, the third impedance Z3 is equal to the collector of the third PNP transistor TR3 and the fourth impedance. Instead of the base of the PNP transistor TR4, it may be connected between the base of the third PNP transistor TR3 and the emitter of the fourth PNP transistor TR4.

  The oscillation devices OSC1p (1), OSC1p (2), OSC2p (1), and OSC2p (2) having the above-described configuration are the same as the oscillation devices OSC1, OSC2A, and OSC2B of the first and second embodiments. Effects can be obtained.

1 is a diagram illustrating a configuration of an oscillation device according to Embodiment 1. FIG. FIG. 3 is a diagram illustrating an equivalent circuit of the oscillation device according to the first embodiment. FIG. 3 is a diagram illustrating a detailed equivalent circuit of the oscillation device according to the first embodiment. FIG. 3 is a diagram illustrating a specific circuit of the oscillation device according to the first embodiment. FIG. 6 is a diagram illustrating an experimental result of a specific circuit of the oscillation device according to the first embodiment (part 1); FIG. 2 is a diagram illustrating experimental results of a specific circuit of the oscillation device according to the first embodiment (No. 2). FIG. 3 is a diagram illustrating experimental results of a specific circuit of the oscillation device according to the first embodiment (part 3); FIG. 5 is a diagram illustrating another specific circuit of the oscillation device according to the first embodiment. FIG. 6 is a diagram illustrating an experimental result of another specific circuit of the oscillation device according to the first embodiment (first); FIG. 6 is a diagram illustrating an experimental result of another specific circuit of the oscillation device according to the first embodiment (No. 2). FIG. 6 is a diagram illustrating experimental results of another specific circuit of the oscillation device according to the first embodiment (part 3); FIG. 6 is a diagram illustrating a configuration of an oscillation device according to a second embodiment. FIG. 6 is a diagram illustrating an equivalent circuit of the oscillation device according to the second embodiment. FIG. 6 is a diagram illustrating a specific circuit of the oscillation device according to the second embodiment. FIG. 6 is a diagram illustrating experimental results of a specific circuit of the oscillation device according to the second embodiment (part 1); FIG. 6 is a diagram illustrating experimental results of a specific circuit of the oscillation device according to the second embodiment (part 2); FIG. 9 is a diagram illustrating experimental results of a specific circuit of the oscillation device according to the second embodiment (part 3); FIG. 6 is a diagram illustrating a configuration of an oscillation device according to a modification of the second embodiment. FIG. 10 is a diagram illustrating an equivalent circuit of an oscillation device according to a modification of the second embodiment. FIG. 10 is a diagram illustrating a specific circuit of an oscillation device according to a modification of the second embodiment. FIG. 10 is a diagram illustrating an experimental result of a specific circuit of the oscillation device according to the modification of the second embodiment (part 1); FIG. 11 is a diagram illustrating experimental results of a specific circuit of the oscillation device according to the modification of the second embodiment (part 2); FIG. 13 is a diagram illustrating experimental results of a specific circuit of the oscillation device according to the modification of the second embodiment (part 3); The figure which shows the structure of the oscillation apparatus of the other modification of Example 1 (the 1). FIG. 2 is a diagram illustrating a configuration of an oscillation device according to another modification of the first embodiment (No. 2). FIG. 11 is a diagram illustrating a configuration of an oscillation device according to another modification of the second embodiment (part 1); FIG. 11 is a diagram illustrating a configuration of an oscillation device according to another modification of the second embodiment (part 2); The figure which shows the structure of the conventional oscillation apparatus. The figure which shows the negative resistance of the conventional oscillation apparatus. The figure which shows the current consumption of the conventional oscillation apparatus. The figure which shows the amplitude of the oscillation signal of the conventional oscillation apparatus.

Explanation of symbols

  OSC1 (emb1) ... specific circuit, TR1 ... first NPN transistor, TR2 ... second NPN transistor, X ... crystal resonator, R1 ... first resistor, C3, C4 ... capacitor.

Claims (5)

A first NPN transistor;
A second NPN transistor;
A crystal unit,
A first resistor;
A first capacitor;
A second capacitor;
An emitter of the first NPN transistor is connected to a ground potential;
A collector of the second NPN transistor is connected to a power supply potential;
A base of the first NPN transistor and an emitter of the second NPN transistor are connected;
The crystal resonator and the first resistor are connected in parallel between the collector of the first NPN transistor and the base of the second NPN transistor,
The first capacitor is connected AC between the collector of the first NPN transistor and the power supply potential,
The oscillation device, wherein the second capacitor is connected between a base and an emitter of the second NPN transistor. A third capacitor;
The oscillation device according to claim 1, wherein the third capacitor is connected between a base and an emitter of the first NPN transistor. A second resistor;
2. The oscillation device according to claim 1, wherein the second resistor is connected between a collector of the first NPN transistor and the power supply potential. A first NPN transistor;
A second NPN transistor;
A crystal unit,
A first resistor;
A first capacitor;
A second capacitor;
An emitter of the first NPN transistor is connected to a power supply potential;
A collector of the second NPN transistor is connected to a ground potential;
A base of the first NPN transistor and an emitter of the second NPN transistor are connected;
The crystal resonator is connected between a base and a collector of the first NPN transistor,
The first resistor is between the collector of the first NPN transistor and the base of the second NPN transistor, or between the base of the first NPN transistor and the second NPN transistor. Connected between the emitters,
The first capacitor is connected AC between the collector of the first NPN transistor and the power supply potential,
The oscillation device, wherein the second capacitor is connected between a base and an emitter of the second NPN transistor. A second resistor;
5. The oscillation device according to claim 4, wherein the second resistor is connected between a collector of the first NPN transistor and the power supply potential.

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