JP2008088466A - Vapor deposition mask, substrate holder for vapor deposition, and method for determining vapor deposition state - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition mask, a substrate holder for vapor deposition, and a method for determining a vapor deposition state for correctly and efficiently measuring the film thickness even when performing the film deposition while moving a substrate. <P>SOLUTION: A quartz resonator 16 for monitor is held by a vapor deposition mask 19 moving together with a substrate during the film deposition, and a film deposition state is monitored by the quartz resonator 16. Thus, the vapor deposition rate and the film thickness can be correctly and efficiently obtained even without remodeling a vapor deposition chamber 11. Further, in the vapor deposition mask 19, a terminal 16 for the quartz resonator 16 is exposed to the side opposite to the side opposing a vapor deposition source 12. Consequently, in the vapor deposition mask 19 after the film deposition, the resonance frequency of the quartz resonator 16 can be measured only by placing a probe 21 on a side opposite to the side facing the vapor deposition source 12. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vapor deposition mask, a vapor deposition substrate holder, and a vapor deposition state determination method used in a vapor deposition method such as vacuum vapor deposition or sputter vapor deposition. More specifically, the present invention relates to a technique for determining a deposition state when forming a film while moving the substrate.

In a vapor deposition apparatus such as vacuum vapor deposition or sputter vapor deposition, a monitor crystal resonator is arranged in the film formation chamber at the side of the space between the vapor deposition source (evaporation source or target) and the substrate. A method for obtaining the deposition rate and film thickness by measuring the resonance frequency of the crystal resonator after film formation has been proposed (see Patent Document 1).
Japanese Patent Laid-Open No. 2005-206896

  However, if the method disclosed in Patent Document 1 is adopted in a rotary evaporation apparatus that performs evaporation while rotating the substrate or an in-line evaporation apparatus that performs evaporation while moving the substrate in the in-plane direction, the substrate moves, but the monitor Since the quartz crystal resonator for use does not move, the substrate and the quartz crystal resonator have different film forming conditions, and there is a problem that the deposition rate and the film thickness cannot be obtained accurately.

  As a solution to such a problem, film formation is performed with a small glass substrate attached to the substrate, and after the film formation, the small glass substrate is removed from the substrate, and the thin film formed on the glass substrate is removed. A method of measuring the film thickness using an ellipsometer or a step meter is conceivable. However, in this method, in order to ensure measurement accuracy, it is necessary to increase the thickness of the thin film to some extent. For example, when forming a film so as to include a dopant material having a low deposition rate, the film is formed. It takes a long time and takes a long time to measure the film thickness.

  Another possible solution is to provide a drive mechanism for the crystal unit for monitoring and move the crystal unit together with the substrate. However, this method complicates the structure of the vapor deposition chamber as much as the drive mechanism for the quartz crystal resonator is provided in the vapor deposition chamber, and may cause deterioration in the quality of the formed thin film due to dust generation from the drive mechanism. It is not preferable.

  In view of the above problems, an object of the present invention is to provide a deposition mask, a deposition substrate holder, and a deposition state capable of accurately and efficiently measuring a film thickness even when a film is formed while moving the substrate. It is to provide a determination method.

  In order to solve the above-described problems, the present invention includes an opening corresponding to a pattern formed on a substrate by vapor deposition or sputtering, and is disposed on the side where the vapor deposition source is located with respect to the substrate during film formation. It is a vapor deposition mask, and a crystal resonator for film formation monitoring is held on the side facing the vapor deposition source.

  In the present invention, since the crystal oscillator for monitoring is held on the vapor deposition mask that moves together with the substrate during film formation, the film is formed on the crystal resonator under the same conditions as the substrate. Therefore, in a rotary evaporation device that performs evaporation while rotating the substrate or an in-line evaporation device that performs evaporation while moving the substrate in the in-plane direction, the evaporation speed and film thickness can be accurately adjusted without modifying the evaporation chamber. And can be obtained efficiently.

  In the vapor deposition mask according to the present invention, it is preferable that a terminal for the crystal resonator is provided on the surface opposite to the side facing the vapor deposition source. With this configuration, after the film formation, the resonance frequency of the crystal resonator can be measured by simply placing the probe on the surface of the vapor deposition mask that is opposite to the side facing the vapor deposition source.

  In the vapor deposition mask according to the present invention, the crystal resonator is detachably held in a through-hole penetrating a surface side facing the vapor deposition source and a surface side opposite to the side facing the vapor deposition source. Preferably it is. With this configuration, the crystal unit can be easily replaced, and a terminal for the crystal unit can be provided on the surface of the vapor deposition mask opposite to the side facing the vapor deposition source.

  In another embodiment of the present invention, when performing film formation on the substrate by vapor deposition or sputtering, the substrate holder for vapor deposition moves the substrate relative to the vapor deposition source, on the surface facing the vapor deposition source, It is characterized by holding a crystal unit for monitoring.

  In the present invention, since the crystal oscillator for monitoring is held on the evaporation donor substrate holder that moves together with the substrate during film formation, the crystal is formed on the crystal oscillator under the same conditions as the substrate. Therefore, in a rotary evaporation device that performs evaporation while rotating the substrate or an in-line evaporation device that performs evaporation while moving the substrate in the in-plane direction, the evaporation speed and film thickness can be accurately adjusted without modifying the evaporation chamber. And can be obtained efficiently.

  In the substrate holder for vapor deposition according to the present invention, it is preferable that a terminal for the crystal unit is provided on the surface opposite to the side facing the vapor deposition source. With this configuration, after the film formation, it is possible to measure the resonance frequency of the crystal resonator by simply placing the probe on the surface of the evaporation donor substrate holder opposite to the side facing the evaporation source.

  In the substrate holder for vapor deposition according to the present invention, the crystal resonator is detachably held in a through hole that penetrates a surface side facing the vapor deposition source and a surface side opposite to the side facing the vapor deposition source. It is preferable. If comprised in this way, while being able to replace | exchange crystal oscillator easily, in the substrate holder for vapor deposition, the terminal with respect to a crystal oscillator can be provided in the surface side opposite to the side facing a vapor deposition source.

  In the present invention, when forming a film on the substrate by vapor deposition while moving the substrate with respect to the vapor deposition source, the vapor deposition substrate holder for holding and moving the substrate, or the movement held by the vapor deposition substrate holder The film is formed with the crystal resonator for film formation being held on the side where the vapor deposition source is located in the member, the resonance characteristics of the crystal resonator are measured, and the thickness of the formed thin film is determined. It is characterized by measuring.

  In the present invention, film formation is performed in a state where a plurality of crystal resonators are held on the deposition substrate holder or the moving member on the side where the evaporation source is located, and resonance characteristics of the plurality of crystal resonators are measured. The film thickness distribution may be measured.

  In the present invention, the moving member is, for example, a vapor deposition mask having an opening corresponding to a pattern to be formed on the substrate. The moving member may be a dummy substrate, for example.

  A film thickness measuring method and a vapor deposition apparatus to which the present invention is applied will be described below with reference to the drawings. In each figure, the scale is different for each member in order to make each member recognizable on the drawing. Moreover, in the following embodiment, the line head which is an example of an organic electroluminescent apparatus is illustrated as an object where the vapor deposition apparatus of this invention is used.

[First Embodiment]
(Configuration example of organic EL device)
FIGS. 1A and 1B are a cross-sectional view and a plan view of the main part of a line head, which is an example of an organic EL device manufactured using the vapor deposition apparatus of the present invention. 2 (a), 2 (b), and 2 (c) are respectively a plan view of a large substrate used in manufacturing the element substrate shown in FIG. 1, a plan view showing an enlarged main part of the large substrate, and It is a top view of an element substrate.

  An organic EL device 1 shown in FIGS. 1A and 1B is a line head used in a printer using an electrophotographic method, and is a light emitting element array (light emitting section) formed by arranging a plurality of organic EL elements 3. Line) 3A is provided in one or a plurality of rows, for example, three rows. In such a line head, among the organic EL elements 3 included in the light emitting element array 3A, a predetermined organic EL element 3 is turned on and irradiated on the photosensitive drum, whereby an image (latent image) is formed on the photosensitive drum. ). Here, the organic EL device 1 has an elongated rectangular shape. Usually, as shown in FIGS. 2A and 2B, the organic EL element 3 and the like are formed on one large substrate 2A. Thereafter, the substrate is cut into a plurality of element substrates 2 having a single size as shown in FIG. 2C, and in the case of the bottom emission method, a sealing substrate 2B is attached to the element substrate 2.

  In FIG. 1A again, in the case of the bottom emission method in which the organic EL device 1 emits the light emitted from the light emitting layer 7 from the pixel electrode 4 side, the emitted light is extracted from the element substrate 2 side. Therefore, a transparent or translucent substrate is used as the element substrate 2. For example, glass, quartz, resin (plastic, plastic film) and the like can be mentioned, and a glass substrate is particularly preferably used. On the element substrate 2, a circuit portion 5 including a driving transistor 5 a (thin film transistor) electrically connected to the pixel electrode 4 is formed along the light emitting element row 3 </ b> A. An organic EL element 3 is formed. The organic EL element 3 includes a pixel electrode 4 that functions as an anode, a hole transport layer 6 that injects / transports holes from the pixel electrode 4, a light-emitting layer 7 (organic functional layer) made of an organic EL material, An electron injection layer 8 for injecting / transporting electrons and a cathode 9 are stacked in this order. As shown in FIGS. 2A and 2B, an external connection terminal 5b is connected to the circuit portion 5 of the element substrate 2 so that each organic EL element 3 can be controlled from the outside.

(Manufacturing method of the organic EL device 1)
In order to manufacture the organic EL device 1 described with reference to FIGS. 1 and 2, each layer is formed on the element substrate 2 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. However, organic functional layers such as the hole transport layer 6, the light emitting layer 7, and the electron injection layer 8 are easily deteriorated by moisture and oxygen. For this reason, when an organic functional layer such as the light emitting layer 7 is formed, and further, when the cathode 9 is formed, if a patterning process using a resist mask is performed, the resist mask is removed with an etching solution or oxygen plasma. In some cases, the organic functional layer is deteriorated by moisture or oxygen.

  Therefore, in this embodiment, when forming an organic functional layer such as the light emitting layer 7 and further when forming the cathode 9, a thin film having a predetermined shape is formed on the element substrate 2 by using a mask vapor deposition method. A patterning process using a resist mask is not performed. In this mask vapor deposition method, vapor deposition is performed in a vapor deposition chamber, which will be described later, with a vapor deposition mask superimposed on a predetermined position of a large substrate 2A (element substrate 2 / substrate to be processed). In the case of forming the light emitting layer 7, the low molecular organic EL material is heated and evaporated, and the light emitting layer 7 is formed in a stripe shape on the lower surface of the large substrate 2A through the opening of the evaporation mask. The formation of the hole transport layer 6, the electron injection layer 8, the cathode 9 and the like is performed in substantially the same manner. The present invention can also be applied when forming the light emitting layer 7 in which the host material is doped with a fluorescent dye.

(Structure of vapor deposition equipment)
FIG. 3 is a schematic configuration diagram showing a configuration of a vapor deposition apparatus to which the present invention is applied.

  In FIG. 3, the vapor deposition apparatus 10 is provided with a vapor deposition substrate holder 18 that holds a large substrate 2 </ b> A (element substrate 2) at an upper position in the vapor deposition chamber 11, and the vapor deposition substrate holder 18 includes a mask. A vapor deposition mask 19 is also held through the holder. A vapor deposition source 12 that supplies vapor deposition molecules and vapor atoms toward the large substrate 2 </ b> A is configured at a lower position in the vapor deposition chamber 11.

  Here, if the vapor deposition apparatus 10 is a rotary type, the vapor deposition substrate holder 18 rotates, and accordingly, the large substrate 2A and the vapor deposition mask 19 also rotate. On the other hand, if the vapor deposition apparatus 10 is an in-line type, the vapor deposition substrate holder 18 holding the large substrate 2 </ b> A and the vapor deposition mask 19 sequentially passes through the vapor deposition chamber 11. In any vapor deposition apparatus 10, the vapor deposition source 12 is fixed, but the large substrate 2A is formed while moving.

(Structure of evaporation mask)
4A and 4B are a perspective view and an enlarged cross-sectional view, respectively, of a vapor deposition mask to which the present invention is applied. In this embodiment, as shown in FIGS. 4A and 4B, the vapor deposition mask 19 has a plurality of openings 19a corresponding to the film formation pattern on the element substrate 2 formed in parallel and at regular intervals. . In this embodiment, the width of the opening 19a is about 1 to 3 mm, the length is 200 to 300 mm, and the pitch P is about 12 mm, for example.

  Here, the vapor deposition mask 19 includes, for example, a mask member in which an opening 19a is formed and a support substrate that supports the mask member. The mask member has a thickness of about 0.25 to 0. A thin plate made of a metal of 5 mm (for example, stainless steel, invar, 42 alloy, nickel alloy). In forming the evaporation mask 19, glass, ceramics, silicon, or the like may be used in addition to the metal material. Further, when the vapor deposition mask 19 is configured, a magnetic material such as SUS430 may be used so that it is attracted and fixed by a magnet during vapor deposition.

  In the vapor deposition mask 19 configured as described above, in this embodiment, a through hole 190 whose opening is enlarged toward the substrate side is formed in the peripheral portion of the vapor deposition mask 19. For example, the through hole 190 has a structure in which an annular first step portion 190a and second step portion 190b are formed in this order from the vapor deposition source side to the substrate side. Further, in the vapor deposition mask 19, the crystal resonator 16 is mounted using the first step portion 190 a in the through hole 190, and the edge portion of one surface 16 a of the crystal resonator 16 is the first. The edge portion of the other surface 16 b is held by the fastener 25. By arranging in this way, the crystal resonator 16 is held in a state exposed on the surface on the vapor deposition source side in the vapor deposition mask 19, and on the surface opposite to the vapor deposition source side in the vapor deposition mask 19, The terminal 16c of the crystal resonator 16 is in an exposed state.

(Film forming operation and film thickness measuring operation)
With reference to FIG. 3 and FIG. 4, the film-forming operation | movement with the vapor deposition apparatus to which this invention is applied is demonstrated. When film formation is performed using the vapor deposition apparatus 10 of this embodiment, first, before film formation, as shown in FIG. 4B, the terminal 16c of the crystal resonator 16 mounted on the vapor deposition mask 19 is used. The terminal 21a of the probe 21 is brought into contact with the quartz resonator 16, and the resonance frequency of the crystal resonator 16 is measured.

  Next, as shown in FIG. 3, vapor deposition is performed in the vapor deposition chamber 11 while the vapor deposition mask 19 and the large substrate 2 </ b> A are held by the vapor deposition substrate holder 18. At this time, the deposition substrate holder 18 rotates or passes through the deposition chamber 11, and the large substrate 2 </ b> A is deposited while moving. As a result, film formation is also performed on the surface of the crystal unit 16 facing the vapor deposition source 12.

  After the film formation on the large substrate 2A is completed, the terminal 21a of the probe 21 is brought into contact with the terminal 16c of the crystal resonator 16 mounted on the evaporation mask 19, the resonance frequency of the crystal resonator 16 is measured, and the resonance before and after the film formation is measured. The film thickness of the thin film formed on the crystal resonator 16 is calculated from the change in frequency, and this is used as the film thickness of the thin film formed on the large substrate 2A.

(Main effects of this form)
As described above, in the vapor deposition apparatus 10 of this embodiment, the crystal resonator 16 for monitoring is held on the vapor deposition mask 19 (moving member) that moves together with the substrate during film formation. The film is formed under the same conditions. Therefore, in a rotary deposition apparatus that performs deposition while rotating the substrate and an in-line deposition apparatus that performs deposition while moving the substrate in the in-plane direction, the deposition rate and film thickness can be increased without modifying the deposition chamber 11. It can be determined accurately and efficiently.

  Further, since the degree of deposition of the deposition material that adheres to the deposition mask 19 can be managed, the necessity of cleaning the deposition mask 19 can be managed.

  Furthermore, since the terminal 16c for the crystal unit 16 is exposed on the surface of the vapor deposition mask 19 opposite to the side facing the vapor deposition source 12, the vapor deposition mask 19 is exposed to the vapor deposition source 12 after film formation. The resonance frequency of the crystal unit 16 can be measured simply by placing the probe 21 on the side opposite to the facing side. Therefore, since it is not necessary to remove the crystal resonator 16 from the vapor deposition mask 19 at the time of measurement, the measurement can be performed efficiently.

  Furthermore, since the crystal resonator 16 is held in the through hole 190 in the vapor deposition mask 19, the surface of the vapor deposition mask 19 opposite to the side facing the vapor deposition source 12 is opposed to the crystal resonator 16. A terminal 16c can be provided. In addition, the crystal unit 16 can be easily replaced by simply removing the fastener 25.

  Moreover, in the vapor deposition apparatus 10 of this embodiment, it is not necessary to provide a device such as a rate monitor equipped with a crystal resonator in the vapor deposition chamber 11. Therefore, the configuration in the vapor deposition chamber 11 can be simplified.

  Further, in the vapor deposition apparatus 10 of this embodiment, an ellipsometer or a step meter is used to calculate the film thickness of the thin film formed on the element substrate 2 by changing the resonance frequency of the crystal resonator 16 before and after film formation. Compared with the method of using and measuring the film thickness, the film thickness required for the film thickness measurement can be reduced, so that the measurement accuracy is also improved. In particular, the vapor deposition apparatus 10 of this embodiment is effective when a dopant material having a very low vapor deposition rate is vapor-deposited on an element substrate and the thickness of a thin film formed thereby is measured.

[Second Embodiment]
In the first embodiment, the film thickness of the thin film formed on the element substrate 2 is measured by the monitoring crystal resonator 16 disposed on the vapor deposition mask 19, but the second embodiment is described. In the embodiment, a plurality of crystal resonators 16 are arranged on the deposition substrate holder 18, and the film thickness of the thin film formed on the element substrate 2 using the plurality of crystal resonators 16 arranged on the deposition substrate holder 18 is changed. The form to measure is shown.

  FIG. 5 is a plan view of an evaporation donor substrate holder according to the second embodiment of the present invention. As shown in FIG. 5, the vapor deposition substrate holder 18 of the present embodiment is formed with a plurality of through holes 180 whose openings are enlarged toward the substrate side. For example, each of the plurality of through holes 180 has a structure in which an annular first step portion 180a and second step portion 180b are formed in this order from the deposition source side toward the substrate side. Further, in the evaporation donor substrate holder 18, the crystal resonator 16 is mounted using the first step portion 180 a in the through hole 180, and the crystal resonator 16 has an edge portion on one surface 16 a at the first portion. The edge portion of the other surface 16 b is held by the fastener 25. By arranging in this way, the plurality of crystal resonators 16 are held in a state exposed on the surface of the vapor deposition source in the vapor deposition substrate holder 18, and on the opposite side of the vapor deposition source side in the vapor deposition substrate holder 18 In this plane, the terminals 16c of the plurality of crystal resonators 16 are exposed.

  In the vapor deposition apparatus 10 of this embodiment, first, as shown in FIG. 5B, the terminal 21 a of the probe 21 is brought into contact with the terminal 16 c of the crystal vibrator 16 mounted on the vapor deposition substrate holder 18, and the crystal vibrator 16. The resonance frequency of is measured.

  Next, before performing film formation on the substrate, vapor deposition is performed in the vapor deposition chamber 11 on the vapor deposition mask holder 19 and the vapor deposition substrate holder 18 that does not hold the large substrate 2A. At this time, the deposition substrate holder 18 rotates or passes through the deposition chamber 11, and film deposition is performed on the deposition substrate holder 18 under the same conditions as when the large substrate 2 </ b> A is deposited. As a result, film formation is also performed on the surface of the crystal unit 16 facing the vapor deposition source 12.

  After the film formation on the deposition substrate holder 18 is completed, the terminal 21a of the probe 21 is brought into contact with the terminal 16c of the crystal resonator 16 mounted on the deposition substrate holder 18, the resonance frequency of the crystal resonator 16 is measured, and the film is formed. The film thickness of the thin film formed on the crystal resonator 16 is calculated from the change in the resonance frequency before and after, and this is used as the film thickness of the thin film formed on the large substrate 2A. The result is fed back to the subsequent film formation on the substrate.

  As described above, in the vapor deposition apparatus 10 of the present embodiment, the crystal resonator 16 for monitoring is held on the vapor deposition substrate holder 18 that moves together with the substrate during film formation. The film is formed under conditions. Therefore, in a rotary deposition apparatus that performs deposition while rotating the substrate or an in-line type deposition apparatus that performs deposition while moving the substrate in the in-plane direction, the deposition rate, film thickness, Furthermore, the film thickness distribution can be obtained accurately and efficiently.

  In addition, since the terminal 16c for the crystal unit 16 is exposed on the surface opposite to the side facing the vapor deposition source 12 in the vapor deposition substrate holder 18, the vapor deposition source in the vapor deposition substrate holder 18 after film formation. The resonance frequency of the quartz crystal resonator 16 can be measured simply by placing the probe 21 on the surface opposite to the side facing 12. Therefore, since it is not necessary to remove the crystal unit 16 from the evaporation donor substrate holder 18 during measurement, the measurement can be performed efficiently.

  Furthermore, since the crystal resonator 16 is held in the through hole 180 in the vapor deposition substrate holder 18, the crystal resonator is disposed on the surface opposite to the side facing the vapor deposition source 12 in the vapor deposition substrate holder 18. A terminal 16c for 16 can be provided. In addition, the crystal unit 16 can be easily replaced by simply removing the fastener 25.

  Moreover, in the vapor deposition apparatus 10 of this embodiment, it is not necessary to provide a device such as a rate monitor equipped with a crystal resonator in the vapor deposition chamber 11. Therefore, the configuration in the vapor deposition chamber 11 can be simplified.

  Furthermore, in the vapor deposition apparatus 10 of this embodiment, an ellipsometer or a step meter is used to calculate the film thickness of the thin film formed on the element substrate 2 based on the change in the resonance frequency of the crystal resonator 16 before and after film formation. Compared with the method of measuring the film thickness using the film thickness, the film thickness required for the film thickness measurement can be reduced, so that the measurement accuracy is also improved. In particular, the vapor deposition apparatus 10 of this embodiment is effective when a dopant material having a very low vapor deposition rate is vapor-deposited on the element substrate and the film thickness distribution of the thin film formed thereby is measured.

[Other embodiments]
In the above embodiment, the crystal oscillator 16 for monitoring is held on the vapor deposition mask 19 or the vapor deposition substrate holder 18 that moves under the same conditions as the substrate, but the crystal oscillator 16 for monitoring is held on the dummy substrate. Alternatively, the dummy substrate may be held on the deposition substrate holder 18 to form a film on the dummy substrate, and the film formation state may be measured.

(A), (b) is the principal part sectional drawing of the line head which is an example of an organic EL apparatus, respectively, and a top view. (A), (b), (c) is a plan view of a large substrate used when manufacturing the element substrate shown in FIG. 1, a plan view showing an enlarged main part of the large substrate, and an element substrate. FIG. It is a schematic block diagram which shows the structure of the vapor deposition apparatus to which this invention is applied. (A), (b) is the perspective view of the vapor deposition mask which concerns on the 1st Embodiment of this invention, respectively, and its expanded sectional view. (A), (b) is respectively the top view of the substrate holder for vapor deposition which concerns on the 2nd Embodiment of this invention, and its expanded sectional view.

Explanation of symbols

1 .... Organic EL device, 2 .... Element substrate, 2A ... Large substrate, 3 .... Organic EL element, 7 .... Light emitting layer, 10 .... Evaporation device, 11 .... Evaporation chamber, 12 .... Evaporation source, 16 .. Crystal oscillator, 18 .. Substrate holder for vapor deposition, 19 .. Mask for vapor deposition, 21 .. Probe, 25.

Claims (9)

An evaporation mask provided with an opening corresponding to a pattern to be formed on a substrate by an evaporation method or a sputtering method, and disposed on a side where an evaporation source is positioned with respect to the substrate at the time of film formation,
A vapor deposition mask characterized by holding a crystal oscillator for monitoring on the side of the surface facing the vapor deposition source.   The evaporation mask according to claim 1, further comprising a terminal for the crystal resonator on a side opposite to the side facing the evaporation source.   3. The crystal resonator is detachably held in a through hole that penetrates a surface side facing the vapor deposition source and a surface side opposite to the side facing the vapor deposition source. The vapor deposition mask according to 1. A substrate holder for vapor deposition that holds and moves the substrate relative to a vapor deposition source when forming a film on the substrate by vapor deposition,
A substrate holder for vapor deposition characterized by holding a crystal resonator for monitoring on the surface facing the vapor deposition source.   The evaporation donor substrate holder according to claim 4, further comprising a terminal for the crystal unit on a surface opposite to the side facing the evaporation source.   6. The crystal resonator is detachably held in a through hole penetrating a surface side facing the vapor deposition source and a surface side opposite to the side facing the vapor deposition source. The substrate holder for vapor deposition as described in 2. In forming a film on the substrate by vapor deposition or sputtering while moving the substrate relative to the vapor deposition source,
The deposition substrate holder that holds and moves the substrate, or the deposition member that holds the crystal resonator for deposition monitoring on the side where the deposition source is located on the moving member held by the deposition substrate holder. And determining the thickness of the thin film formed by measuring the resonance characteristics of the crystal resonator.   Film formation is performed in a state where a plurality of crystal resonators are held on the deposition substrate holder or the moving member on the side where the evaporation source is located, and the resonance characteristics of the plurality of crystal resonators are measured to determine the film thickness. 8. The deposition state determination method according to claim 7, wherein the distribution is measured.   The vapor deposition state determination method according to claim 7, wherein the moving member is a vapor deposition mask provided with an opening corresponding to a pattern to be formed on the substrate.

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