JP2008084638A - Light emitter - Google Patents

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JP2008084638A
JP2008084638A JP2006261927A JP2006261927A JP2008084638A JP 2008084638 A JP2008084638 A JP 2008084638A JP 2006261927 A JP2006261927 A JP 2006261927A JP 2006261927 A JP2006261927 A JP 2006261927A JP 2008084638 A JP2008084638 A JP 2008084638A
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light
light emitting
fiber
light emitter
base material
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Imei Shu
偉銘 周
Sadayuki Toda
貞行 戸田
Hisashi Koaizawa
久 小相澤
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that, since in a light emitter with a light-emitting part formed on the surface of a light-transmitting base material, the light emitter is formed on a base material formed in plane, an area of a light-emitting layer pinched by an anode and a cathode contributing to light emission is limited to the above plane area where the light emitter exists, and therefore, it has been impossible to structure a light emitter with excellent brightness. <P>SOLUTION: An area where the light emitter is formed out of an outer periphery face of the base material is formed into an arc-shaped groove, along which, a plurality of light emitting parts are formed. With this, an area of the light-emitting layer contributing to light emission is increased, and a light emitter with a higher brightness can be provided. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、光を発光する発光体に関し、その目的は輝度の優れた発光体を提供することにある。   The present invention relates to a light emitter that emits light, and an object thereof is to provide a light emitter excellent in luminance.

現在主流のアクティブマトリックス型平面表示装置は、表示面にTFT(Thin Film Transistor)からなる画素駆動スイッチと画素表示媒体からなる平面ディスプレイであり、出発点の基材はソーダライム等の透明ガラス板である。基材としてはプラスチックフィルムを用いる試みがなされているが、未だ実用化に至らず、表示媒体としては液晶が、アクティブマトリックスとしてはa-SiTFT(Amorphous-Silicon-TFT)が現在のところ主流であり、PC用、モニタ用等に10"〜20"対角サイズのディスプレイが量産されている。   The current mainstream active matrix flat panel display is a flat panel display consisting of a pixel drive switch consisting of a TFT (Thin Film Transistor) and a pixel display medium on the display surface. The starting substrate is a transparent glass plate such as soda lime. is there. Attempts have been made to use plastic film as the base material, but it has not yet been put into practical use. Currently, liquid crystal is the display medium, and a-Si TFT (Amorphous-Silicon-TFT) is the mainstream as the active matrix. 10 "to 20" diagonal displays are mass-produced for PCs, monitors and the like.

表示媒体としてのLCD(Liquid Crystal Display)は、CRT(Cathode Ray Tube)と比較すると、テレビジョン動画の表示性能、特に白色、ホワイトピーク、応答性に問題がある。これに対して、最近開発、製品化が進められている有機LED((OLED:Organic Light-Emitting-Diode)は自発光であり、白色、ホワイトピーク応答性等でLCDより優れた画質を実現できる。   LCD (Liquid Crystal Display) as a display medium has problems in display performance of television moving images, particularly white, white peak, and responsiveness, compared with CRT (Cathode Ray Tube). In contrast, organic LEDs (Organic Light-Emitting-Diodes) (OLEDs) that have recently been developed and commercialized are self-luminous and can achieve better image quality than LCDs, such as white and white peak responsiveness. .

一方、TFTも最近、低温プロセスの多結晶Si(p-Si)の開発、製品化が急速に進められている。これはまずp-SiのTFT性能が高く周辺回路内蔵が可能であり、コスト低減のメリットがあるためである。これに加えて、OLEDの駆動には駆動電流密度の面からa-SiTFTでは対応困難であり、LCDへの適用も含めてTFTは低温p-Siへの移行が全体的傾向である。   On the other hand, the development and commercialization of polycrystalline Si (p-Si), which is a low-temperature process, has been rapidly advanced recently. This is because p-Si TFT performance is high and peripheral circuits can be built in, which has the advantage of cost reduction. In addition to this, it is difficult to drive an OLED with an a-Si TFT in terms of drive current density, and the TFT tends to shift to low-temperature p-Si as a whole, including application to LCD.

アクティブマトリックス型平面表示装置をはじめとする全ての表示装置における市場の要求は、常に、表示サイズの大型化、高精細化、低コストの3点である。これらの要求に対して、現在主流のa-SiTFT−LCDは、性能改良の余地は僅かで、大型化に関しては40"対角テレビジョン、高精細化に対しては20"以下のディスプレイが実質的な限界で、コスト対応はガラス基材の大型化が唯一の手段といってよい状況である。また、そのガラス基材は高精度の平坦性が要求され、湾曲面を有する基材を用いることは難しい。   The market requirements for all display devices including active matrix flat display devices are always three points: increase in display size, higher definition, and lower cost. In response to these demands, the current mainstream a-Si TFT-LCD has little room for performance improvement, with a 40 "diagonal television for large size and a display of 20" or less for high definition. In terms of cost, the only way to deal with costs is to increase the size of the glass substrate. In addition, the glass substrate is required to have high precision flatness, and it is difficult to use a substrate having a curved surface.

これに対して、長手方向に複数のOLED素子が形成された線状発光体は可撓性に富み、これを湾曲した基材上に並べてディスプレイ装置を構成することが公知となっている(例えば、特許文献1参照)。   On the other hand, linear light emitters in which a plurality of OLED elements are formed in the longitudinal direction are rich in flexibility, and it is known to form a display device by arranging them on a curved substrate (for example, , See Patent Document 1).

この線状発光体は、断面四角形のファイバーの一面に沿って形成され、ファイバーの長手方向に形成された透明電極とその上に形成されたOLED発光層と、さらにOLED発光層の上に長手方向に沿って間隔をおいて形成された複数の陰極電極とを有している。   This linear light emitter is formed along one side of a fiber having a square cross section, and is formed of a transparent electrode formed in the longitudinal direction of the fiber, an OLED light emitting layer formed thereon, and further on the OLED light emitting layer in the longitudinal direction. And a plurality of cathode electrodes formed at intervals along the line.

しかしながら、そのような構造の線状発光体によれば、ファイバー上にOLED素子を形成した後に行われるファイバーの巻き取り、切断、基材上への配置等の際に、ファイバー上に突出している透明電極、OLED発光層及び陰極電極が治具等に接触して損傷を受けやすいので、歩留まりが低下する原因となる。   However, according to the linear light emitter having such a structure, the fiber protrudes on the fiber during winding, cutting, arrangement on the substrate, etc. performed after the OLED element is formed on the fiber. Since the transparent electrode, the OLED light-emitting layer, and the cathode electrode are easily damaged by coming into contact with a jig or the like, this causes a decrease in yield.

これを解決するために、矩形状に形成されたファイバーの側面に絶縁膜を形成し、他の一面の長手方向に沿って複数の発光部を形成した線状発光体が公知となっている(例えば、特許文献2参照)。   In order to solve this, a linear light emitter in which an insulating film is formed on a side surface of a fiber formed in a rectangular shape and a plurality of light emitting portions are formed along the longitudinal direction of the other surface is known ( For example, see Patent Document 2).

図4、図5は、係る線状発光体の製造方法の一例を示すものである。   4 and 5 show an example of a method for manufacturing such a linear light emitter.

即ち、初めに、図示しないリールに巻かれて断面が図4(a)に示すような略四角形の石英等か
らなる光透過性のファイバー1を用意し、線状発光体を形成するための基材として使用する。その断面は、例えば約0.3mm×0.3mmの大きさである。
That is, first, a light-transmitting fiber 1 made of quartz or the like having a substantially rectangular shape as shown in FIG. 4A wound around a reel (not shown) is prepared, and a base for forming a linear light emitter is prepared. Use as material. The cross section has a size of about 0.3 mm × 0.3 mm, for example.

なお、光透過性のファイバーとしては、石英の他に、ホウケイ酸塩若しくはソーダ石灰ガラス、サファイア、その他の適切なガラス材料等のガラスファイバー、又は、メタクリル酸メチル(PMMA)、ポリカーボネート、アクリル、マイラ、ポリエステル、ポリイミド、その他の適切なプラスチック材料等からなるプラスチックファイバーを用いてもよい。   In addition, as a light transmissive fiber, in addition to quartz, glass fiber such as borosilicate or soda lime glass, sapphire, and other suitable glass materials, or methyl methacrylate (PMMA), polycarbonate, acrylic, mylar Plastic fibers made of polyester, polyimide, other suitable plastic materials, or the like may be used.

次に、ファイバー1をリールから引き出して成膜装置(不図示)内に導き、図4(b)に示すように、その外周のうち隣り合う第1、第2及び第3面1a、1b、1cの上にスパッタ法により酸化インジウム錫(ITO:Indium Tin Oxide)、酸化亜鉛(ZnO )、酸化錫(SnO2)を順に堆積してなる透明電極2を約100nmの厚さに形成する。その透明導電材は、ファイバー1の第1〜第3面のそれぞれで略垂直方向に堆積される。 Next, the fiber 1 is pulled out from the reel and guided into a film forming apparatus (not shown). As shown in FIG. 4B, the first, second and third surfaces 1a, 1b adjacent to each other on the outer periphery thereof. A transparent electrode 2 formed by sequentially depositing indium tin oxide (ITO), zinc oxide (ZnO), and tin oxide (SnO 2 ) on 1c by sputtering is formed to a thickness of about 100 nm. The transparent conductive material is deposited in a substantially vertical direction on each of the first to third surfaces of the fiber 1.

次に、図4(c)に示すように、ファイバー1のうち第2面1bの両側の第1、第3面1a,1cの透明電極2上に導電性反射膜3、4をスパッタ法により所定の厚さに形成する。この導電性反射膜3、4は、クロム(Cr)、アルミニウム(Al)を順に形成した二層構造導電膜や、チタン(Ti)、アルミニウムを順に形成した二層構造導電膜から構成される。   Next, as shown in FIG. 4C, conductive reflection films 3 and 4 are formed on the transparent electrodes 2 on the first and third surfaces 1a and 1c on both sides of the second surface 1b of the fiber 1 by sputtering. A predetermined thickness is formed. The conductive reflective films 3 and 4 are composed of a two-layer structure conductive film in which chromium (Cr) and aluminum (Al) are sequentially formed, and a two-layer structure conductive film in which titanium (Ti) and aluminum are sequentially formed.

さらに、図4(d)に示すように、二酸化シリコン(SiO2)よりなる光透過性の絶縁膜5をCVD(chemical vapor deposition)法によりファイバー1、透明電極2及び導電性反射膜3,4の上に所定の厚さに形成する。その後に、絶縁膜5の上にレジスト6を塗布する。 Further, as shown in FIG. 4D, a light transmissive insulating film 5 made of silicon dioxide (SiO 2 ) is formed on the fiber 1, the transparent electrode 2, and the conductive reflective films 3 and 4 by a chemical vapor deposition (CVD) method. A predetermined thickness is formed on the substrate. Thereafter, a resist 6 is applied on the insulating film 5.

ついで、図4(e)に示すように、レジスト6を露光、現像してパターニングし、ファイバー1の第2面1b上の画素領域に開口部6aを形成する。その開口部6aは、ファイバー1の長手方向に沿って間隔をおいて複数形成され、それらの平面の大きさを例えば50μm×50μm以下とする。なお、レジスト6に照射される露光光は、ファイバー1内を透過して反対側の第4面1d上のレジスト6にも照射されるために、透明電極2が形成されない第4面上のレジスト6にも開口部6bが形成される。   Next, as shown in FIG. 4E, the resist 6 is exposed, developed and patterned to form an opening 6a in the pixel region on the second surface 1b of the fiber 1. A plurality of the openings 6a are formed at intervals along the longitudinal direction of the fiber 1, and the size of these planes is, for example, 50 μm × 50 μm or less. In addition, since the exposure light irradiated to the resist 6 is also irradiated to the resist 6 on the fourth surface 1d on the opposite side through the fiber 1, the resist on the fourth surface where the transparent electrode 2 is not formed. 6 also has an opening 6b.

次に、図4(f)に示すように、塩素系ガスを使用するドライエッチングによりレジスト6の開口部6a,6bを通して絶縁膜5をエッチングして開口部5a、5bを形成する。これにより、ファイバー1の第2面1b上の開口部5aを通して透明電極2の一部が露出し、第4面1d上の開口部5bを通してファイバー1の一部が露出する。   Next, as shown in FIG. 4F, the insulating film 5 is etched through the openings 6a and 6b of the resist 6 by dry etching using a chlorine-based gas to form the openings 5a and 5b. Thereby, a part of the transparent electrode 2 is exposed through the opening 5a on the second surface 1b of the fiber 1, and a part of the fiber 1 is exposed through the opening 5b on the fourth surface 1d.

さらに、図5(a)に示すように、絶縁膜5の開口部5aとレジスト6の開口部6aを通してOLED発光層7を蒸着法により透明電極2上に形成し、続いてマグネシウム(Mg)、銀(Ag)を順に形成してなる二層構造、又はカルシウム(Ca)、アルミニウムを順に形成してなる二層構造の陰極電極8を蒸着法により形成する。   Further, as shown in FIG. 5A, an OLED light emitting layer 7 is formed on the transparent electrode 2 by vapor deposition through the opening 5a of the insulating film 5 and the opening 6a of the resist 6, and then magnesium (Mg), A cathode electrode 8 having a two-layer structure formed by sequentially forming silver (Ag) or a two-layer structure formed by sequentially forming calcium (Ca) and aluminum is formed by vapor deposition.

その後に、図5(b)に示すように、レジスト6をウェット又はドライにより除去すると、レジスト6上に堆積したOLED発光層7及び陰極電極8が除去されるので、OLED発光層7及び陰極電極8は絶縁膜5の開口部5a内に選択的に残される。それらの陰極電極8,OLED発光層7及び透明電極2によって発光素子が構成される。   After that, as shown in FIG. 5B, when the resist 6 is removed by wet or dry, the OLED light emitting layer 7 and the cathode electrode 8 deposited on the resist 6 are removed, so that the OLED light emitting layer 7 and the cathode electrode are removed. 8 is selectively left in the opening 5 a of the insulating film 5. A light emitting element is constituted by the cathode electrode 8, the OLED light emitting layer 7 and the transparent electrode 2.

さらに、ファイバー1を所定の長さに切断した後に、図5(c)に示すように、絶縁基材11上に形成された導電性のデータラインセグメント配線12上の半田バンプ13に、陰極電極8を接続する。これにより、絶縁基材11上には、表示装置の1行分又は一列分の画素が配置される。   Further, after the fiber 1 is cut to a predetermined length, as shown in FIG. 5C, the cathode bumps are formed on the solder bumps 13 on the conductive data line segment wiring 12 formed on the insulating substrate 11. 8 is connected. Thereby, the pixels for one row or one column of the display device are arranged on the insulating base material 11.

係る発光体は、ファイバー1上で各画素を構成するOLED発光層7及び陰極電極8は、絶縁膜5の開口部5a内に形成されて絶縁膜5の上面から突出しないか、或いは絶縁膜5の厚さの調整により陰極電極8を必要量だけ突出させることができるので、ファイバー1の巻き取りや切断などの際に陰極電極8及びOLED発光層7が治具等と接触することが防止でき、損傷を受けにくくなって歩留まりが向上する。   In such a light emitter, the OLED light emitting layer 7 and the cathode electrode 8 constituting each pixel on the fiber 1 are formed in the opening 5a of the insulating film 5 and do not protrude from the upper surface of the insulating film 5, or the insulating film 5 Since the cathode electrode 8 can be protruded by a necessary amount by adjusting the thickness of the fiber, it is possible to prevent the cathode electrode 8 and the OLED light emitting layer 7 from coming into contact with a jig or the like when the fiber 1 is wound or cut. Yield is improved because it is less susceptible to damage.

また、従来の他の例として、特許文献3に示されたものが公知である。   Moreover, what was shown by patent document 3 is well-known as another example of the past.

かかる発光体は、有機発光層A1を、表示面側の透明電極板A2と背面電極A3とからなる一対の電極板により挾持してなる積層構造体の両側に、更に一対の防湿性フィルムA4、A4を積層してなるものである。表示面側の透明電極板A2は、熱可塑性樹脂基材A2a上に金属酸化物透明電極層A2bを形成してなり、更に透明電極板A2の逆側には、対向する電極として金属酸化物または金属からなる背面電極A3が設けられている。透明電極層A2および背面電極A3を含む積層構造は、更に防湿性フィルムの層A4または金属酸化物等からなる他の防湿層A5の積層により封止される。ここで透明電極板A2及び背面電極A3は、電源A6(直流または交流)に接続されるリード線が取り付けられて、有機発光層A1に電圧が印加できる仕組みとされている。
特表2002−538502号公報 特開2006−154589号公報 特開2006−154589号公報
Such a light-emitting body includes a pair of moisture-proof films A4 on both sides of a laminated structure in which the organic light-emitting layer A1 is held by a pair of electrode plates including a transparent electrode plate A2 and a back electrode A3 on the display surface side. A4 is laminated. The transparent electrode plate A2 on the display surface side is formed by forming a metal oxide transparent electrode layer A2b on the thermoplastic resin substrate A2a, and further, on the opposite side of the transparent electrode plate A2, a metal oxide or A back electrode A3 made of metal is provided. The laminated structure including the transparent electrode layer A2 and the back electrode A3 is further sealed with a moisture proof film layer A4 or another moisture proof layer A5 made of a metal oxide or the like. Here, the transparent electrode plate A2 and the back electrode A3 are provided with a lead wire connected to a power source A6 (direct current or alternating current) so that a voltage can be applied to the organic light emitting layer A1.
Japanese translation of PCT publication No. 2002-538502 JP 2006-154589 A JP 2006-154589 A

しかしながら、前記特許文献1〜3に記載された発光体は、発光表面が平面状に形成されたものである。このため、陽極と陰極とで挟まれた発光に寄与する発光層の面積は、発光部が存在する上記平面状の面積に限定され、より一層、輝度に優れた発光部を構成することが出来なかった。   However, the light emitters described in Patent Documents 1 to 3 have a light emitting surface formed in a planar shape. For this reason, the area of the light emitting layer that contributes to the light emission sandwiched between the anode and the cathode is limited to the above planar area where the light emitting part exists, and a light emitting part with even higher luminance can be configured. There wasn't.

また、特許文献2には、図6に示すように、矩形状のファイバーの一面における長手方向に沿って、複数の矩形状の窪み20を設け、この窪み20に図7に示すようにそれぞれ発光部9を形成することも記載されている。この例では、陽極層(透明電極2)が矩形状に形成された窪み20の側面を含めた全体に渡って形成され、この透明電極2の上にOLED発光層7が形成され、更にこの上に陰極層(陰極電極8)が形成されたものが示されているが、実際にはこれらの層2、7、8は極薄く且つスパッタリング法により形成されるものであり、前記側面には発光部9を構成するそれぞれの層が殆んど形成されないものになっている。従って、これら側面は発光に殆んど寄与しないものになっている。   Further, in Patent Document 2, as shown in FIG. 6, a plurality of rectangular depressions 20 are provided along the longitudinal direction of one surface of the rectangular fiber, and light is emitted in each depression 20 as shown in FIG. 7. The formation of part 9 is also described. In this example, the anode layer (transparent electrode 2) is formed over the entire surface including the side surface of the recess 20 formed in a rectangular shape, and the OLED light emitting layer 7 is formed on the transparent electrode 2, and further on this The cathode layer (cathode electrode 8) is shown in FIG. 2, but in reality, these layers 2, 7, and 8 are extremely thin and formed by sputtering, and the side surfaces emit light. The respective layers constituting the portion 9 are hardly formed. Therefore, these side surfaces hardly contribute to light emission.

本発明が解決しようとする課題は、発光部が形成される表面を弧面形状の窪み(溝を含む)に形成することにより、発光部の面積を増やし、発光部の輝度の優れた線状発光体を提供することにある。   The problem to be solved by the present invention is to increase the area of the light-emitting part by forming the surface on which the light-emitting part is formed in an arcuate depression (including a groove), and the linear shape with excellent luminance of the light-emitting part The object is to provide a light emitter.

本発明の発光体は、光透過性の基材の表面に発光部が形成された発光体において、発光部の形成される領域が断面円弧状の窪みに形成され、その窪みに沿って発光部が形成されたことを特徴とする。   The light-emitting body of the present invention is a light-emitting body in which a light-emitting portion is formed on the surface of a light-transmitting substrate. A region where the light-emitting portion is formed is formed in a recess having an arc cross section, and the light-emitting portion is formed along the recess. Is formed.

本発明は、発光部が形成される表面に円弧の窪みが形成され、この窪みに発光部が形成されているので、発光に寄与する発光層の面積が増え、より一層輝度の高い線状発光体を提供することができる。   In the present invention, an arc recess is formed on the surface where the light emitting portion is formed, and the light emitting portion is formed in this recess, so that the area of the light emitting layer contributing to light emission is increased, and linear light emission with higher luminance is achieved. The body can be provided.

以下に本発明の実施の形態を図面に基づいて詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図1は、本発明の第1実施形態に係る線状発光体を示したものである。図において、1、2、3、4、5、6、7、8は、図4〜6と同様にそれぞれ、ファイバー、透明電極、導電性反射膜、導電性反射膜、絶縁膜、透明保護膜、OLED発光層、陰極電極であり、それぞれは図5〜7と同様に機能する。図5〜7に比較して異なる点は、OLED発光層7が形成されるファイバー1の表面を弧状の溝21に形成され、この溝21の上に、透明電極2、OLED発光層7、陰極電極8が順次積層されて構成された発光部9が長手方向に沿って複数個形成されている点である。   FIG. 1 shows a linear light emitter according to a first embodiment of the present invention. In the figure, 1, 2, 3, 4, 5, 6, 7, and 8 are fibers, transparent electrodes, conductive reflective films, conductive reflective films, insulating films, and transparent protective films, respectively, as in FIGS. , OLED light emitting layer, and cathode electrode, which function in the same manner as in FIGS. 5 to 7 is different in that the surface of the fiber 1 on which the OLED light emitting layer 7 is formed is formed in an arc-shaped groove 21, and the transparent electrode 2, the OLED light emitting layer 7, the cathode are formed on the groove 21. The point is that a plurality of light emitting portions 9 formed by sequentially laminating electrodes 8 are formed along the longitudinal direction.

本実施形態は溝21の断面形状が弧状に形成され、その溝21の形状に沿ってぞれの層が積層される。従って、発光に寄与するOLED発光層7(発光部)の面積は、前記溝21の表面積に相当し、従来の平面状の面積に比較して面積が増え、発光面積を増やすことができる。この結果、発光部の輝度を高めることができる。   In the present embodiment, the cross-sectional shape of the groove 21 is formed in an arc shape, and each layer is laminated along the shape of the groove 21. Therefore, the area of the OLED light emitting layer 7 (light emitting portion) that contributes to light emission corresponds to the surface area of the groove 21, and the area increases compared to the conventional planar area, and the light emitting area can be increased. As a result, the luminance of the light emitting unit can be increased.

溝21の形状は、半楕円や半円の形状及びこれよりも小さい弧形状であることが望ましい。溝21の形状を半楕円や半円よりも大きな形状にすると、発光面積が大きくなるが、半円を超えた部分の光量利用効率が悪くなる。また溝21の形状を極端に小さな弧面で構成すると、それによって構成される溝21は浅く且つ平面に近いものとなって、発光面積を増やすことができない。従って、小さい円弧の溝21の形状は円周の32%以上50%以下の形状にするのが良い。仮に溝21の形状を半円(円周の50%)に構成した場合、平面の面積に比較して約2倍の面積に増やすことができ、発光輝度を2倍に増やすことができる。   The shape of the groove 21 is preferably a semi-elliptical or semi-circular shape or an arc shape smaller than this. If the shape of the groove 21 is larger than a semi-ellipse or a semi-circle, the light emission area is increased, but the light amount utilization efficiency in the part exceeding the semi-circle is deteriorated. Further, if the shape of the groove 21 is configured with an extremely small arc surface, the groove 21 formed thereby is shallow and close to a flat surface, and the light emitting area cannot be increased. Therefore, the shape of the small arc-shaped groove 21 is preferably 32% to 50% of the circumference. If the shape of the groove 21 is a semicircle (50% of the circumference), it can be increased to about twice the area of the plane, and the light emission luminance can be increased twice.

このようなファイバー1は、予め石英製のプリフォームの形状を前記溝21が付いた相似形状とし、これを従来の通信用石英光ファイバを製造するときと同様に、加熱・線引きすることにより容易に製造することができる。   Such a fiber 1 is made by preliminarily making the shape of a quartz preform with a similar shape with the groove 21 and heating and drawing the same as in the case of manufacturing a conventional communication quartz optical fiber. Can be manufactured.

ところで、ファイバー1の長手方向に沿って形成された透明電極2はその端部で選択ライン信号配線(不図示)に接続されるので電気的に抵抗値を低くすることが好ましい。上記の構造において導電性反射膜3,4を導電性金属で構成することにより、透明電極2の抵抗値を実質的に低下させることができる。しかし、さらに抵抗を下げたい場合には、ファイバー1の第1面1aと第3面1cの上に蒸着法によって透明導電材からなる透明電極2の下層部を予め形成しておき、その後に、上記した工程を経て、透明電極2、導電性反射膜3,4、絶縁膜5、OLED発光層7及び陰極電極8を形成してもよい。   By the way, since the transparent electrode 2 formed along the longitudinal direction of the fiber 1 is connected to a selection line signal wiring (not shown) at its end, it is preferable to electrically reduce the resistance value. In the above structure, the resistance value of the transparent electrode 2 can be substantially reduced by configuring the conductive reflective films 3 and 4 with a conductive metal. However, in order to further reduce the resistance, a lower layer portion of the transparent electrode 2 made of a transparent conductive material is previously formed on the first surface 1a and the third surface 1c of the fiber 1 by vapor deposition, and then, The transparent electrode 2, the conductive reflective films 3 and 4, the insulating film 5, the OLED light emitting layer 7, and the cathode electrode 8 may be formed through the above-described steps.

図2は本発明の他の実施形態を示すものであり、図1のものに比較して、発光部9の光放出側の面のファイバ1に凸レンズ22が形成され、光の放出角を制御するように構成されている。これにより光が集光され、単位面積の光強度が強調される効果を得ることができる。   FIG. 2 shows another embodiment of the present invention. Compared with the embodiment of FIG. 1, a convex lens 22 is formed on the fiber 1 on the light emitting side surface of the light emitting section 9 to control the light emission angle. Is configured to do. Thereby, light can be condensed and the effect that the light intensity of a unit area is emphasized can be acquired.

図3は本発明の更に他の実施形態を示すものであり、溝21の弧の半径Rを適切に制御して構成することにより、出光面の光強度面分布が調整できる効果がある。   FIG. 3 shows still another embodiment of the present invention. By appropriately controlling the radius R of the arc of the groove 21, the light intensity surface distribution of the light exit surface can be adjusted.

上記の各実施形態ではファイバーの断面を略四角形、楕円形、円形にしたが、これに限定されるものではなく、多角形、筒状、その他の形状であってもよい。     In each of the above-described embodiments, the cross section of the fiber is approximately rectangular, elliptical, or circular, but is not limited thereto, and may be polygonal, cylindrical, or other shapes.

また、上記の実施形態ではOLEDを有する発光部9について説明したが、その他の発光層を有する発光素子であってもよい。また、発光素子の代わりにトランジスタ等の能動素子であってもよい。   In the above-described embodiment, the light emitting unit 9 having the OLED has been described. However, a light emitting element having another light emitting layer may be used. Further, an active element such as a transistor may be used instead of the light emitting element.

なお、上記実施例はファイバ1の長手方向に沿って円弧の溝が形成され、この溝に沿って複数の発光部が形成された線状の発光体を示した場合を説明しているが、本発明は、発光部の形成される基材の表面が断面半球状の窪みに形成され、その窪みに発光部が1個形成された発光体であっても良い。このような実施例においても、発光部が形成される表面が円弧状に形成されているので、平面状のものに比較して表面積を増やすことができ、上記と同様にして輝度が高まった発光体を提供することができる。   In addition, although the said Example demonstrated the case where the circular groove | channel was formed along the longitudinal direction of the fiber 1, and the linear light-emitting body in which the several light emission part was formed along this groove | channel was shown, The light-emitting body in which the surface of the base material on which the light-emitting portion is formed is formed in a recess having a hemispherical cross section and one light-emitting portion is formed in the recess may be used in the present invention. Also in such an embodiment, since the surface on which the light emitting portion is formed is formed in an arc shape, the surface area can be increased as compared with the planar shape, and light emission with increased brightness in the same manner as described above. The body can be provided.

本発明の第1実施形態に係る線状発光体の要部切断端面図である。It is a principal part cutting | disconnection end elevation of the linear light-emitting body which concerns on 1st Embodiment of this invention. 本発明の第2実施形態に係る線状発光体の要部切断端面図である。It is a principal part cutting end elevation of the linear light-emitting body which concerns on 2nd Embodiment of this invention. 本発明の第3実施形態に係る線状発光体の要部切断端面図である。It is a principal part cutting | disconnection end elevation of the linear light-emitting body which concerns on 3rd Embodiment of this invention. (a)〜(f)は、従来の一例におけるファイバーに発光素子を形成する工程を示す要部切断断面図(その1)である。(A)-(f) is principal part cut sectional drawing (the 1) which shows the process of forming a light emitting element in the fiber in a conventional example. (a)〜(c)は、従来の一例における係るファイバーに発光素子を形成する工程を示す要部切断断面図(その2)である。(A)-(c) is principal part cut sectional drawing (the 2) which shows the process of forming a light emitting element in the fiber which concerns on an example of the past. 従来のファイバーの一例を示す要部切断端面図である。It is a principal part cutting end view which shows an example of the conventional fiber. 図6のファイバーに形成された従来の他の発光素子を示す要部切断端面図である。It is a principal part cutting end view which shows the other conventional light emitting element formed in the fiber of FIG. 従来の上記と異なる他の発光素子を示す要部切断端面図である。It is a principal part cutting end view which shows the other light emitting element different from the above conventional.

符号の説明Explanation of symbols

1 ファイバー
1a 面
1b 面
1c 面
1d 面
2 透明電極
3 導電性反射膜
4 導電性反射膜
5 絶縁膜
5a 開口部
5b 開口部
6 レジスト
6a 開口部
6a 開口部
6b 開口部
7 OLED発光層
8 陰極電極
10 絶縁基材
11 絶縁基材
12 データラインセグメント配線
13 半田バンプ
DESCRIPTION OF SYMBOLS 1 Fiber 1a Surface 1b Surface 1c Surface 1d Surface 2 Transparent electrode 3 Conductive reflective film 4 Conductive reflective film 5 Insulating film 5a Opening part 5b Opening part 6 Resist 6a Opening part 6a Opening part 6b Opening part 7 OLED light emitting layer 8 Cathode electrode 10 Insulating base material 11 Insulating base material 12 Data line segment wiring 13 Solder bump

Claims (3)

光透過性の基材の表面に発光部が形成された発光体において、発光部の形成される基材の表面が断面円弧状の窪みに形成され、その窪みに発光部が形成されたことを特徴とする発光体。   In the luminous body in which the light emitting portion is formed on the surface of the light-transmitting base material, the surface of the base material on which the light emitting portion is formed is formed in a recess having an arc cross section, and the light emitting portion is formed in the recess. Characteristic light emitter. 基材が光透過性のファイバーからなり、この基材の外周の一部にその基材の長手方向に沿って円弧の窪み(溝)が形成され、この窪みに沿って複数の発光部が形成されたことを特徴とする請求項1に記載の発光体。   The base material is made of a light-transmitting fiber, and a circular arc recess (groove) is formed along the longitudinal direction of the base material in a part of the outer periphery of the base material, and a plurality of light emitting portions are formed along the recess. The light-emitting body according to claim 1, wherein 窪みの形状は半円よりも小さい円弧であることを特徴とする請求項2に記載の発光体。   The light emitter according to claim 2, wherein the shape of the recess is an arc smaller than a semicircle.
JP2006261927A 2006-09-27 2006-09-27 Light emitter Pending JP2008084638A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010015775A (en) * 2008-07-02 2010-01-21 Furukawa Electric Co Ltd:The Manufacturing method of fiber substrate junction element, and fiber substrate junction element

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09190883A (en) * 1995-12-29 1997-07-22 Nec Corp Resonating organic membrane el element
JPH1012382A (en) * 1996-06-26 1998-01-16 Nec Corp El element
JPH10223368A (en) * 1997-01-31 1998-08-21 Hokuriku Electric Ind Co Ltd Organic el element and its manufacture
JP2003133057A (en) * 2001-10-24 2003-05-09 Seiko Epson Corp Light emitting device and electronic apparatus
JP2005174717A (en) * 2003-12-10 2005-06-30 Samsung Yokohama Research Institute Co Ltd Organic el element and its manufacturing method
WO2005107327A1 (en) * 2004-04-30 2005-11-10 Sanyo Electric Co., Ltd. Light-emitting display
JP2006154589A (en) * 2004-12-01 2006-06-15 Furukawa Electric Co Ltd:The Element using fiber substrate and its manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09190883A (en) * 1995-12-29 1997-07-22 Nec Corp Resonating organic membrane el element
JPH1012382A (en) * 1996-06-26 1998-01-16 Nec Corp El element
JPH10223368A (en) * 1997-01-31 1998-08-21 Hokuriku Electric Ind Co Ltd Organic el element and its manufacture
JP2003133057A (en) * 2001-10-24 2003-05-09 Seiko Epson Corp Light emitting device and electronic apparatus
JP2005174717A (en) * 2003-12-10 2005-06-30 Samsung Yokohama Research Institute Co Ltd Organic el element and its manufacturing method
WO2005107327A1 (en) * 2004-04-30 2005-11-10 Sanyo Electric Co., Ltd. Light-emitting display
JP2006154589A (en) * 2004-12-01 2006-06-15 Furukawa Electric Co Ltd:The Element using fiber substrate and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010015775A (en) * 2008-07-02 2010-01-21 Furukawa Electric Co Ltd:The Manufacturing method of fiber substrate junction element, and fiber substrate junction element

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