JP2008081754A - Thin film production device and thin film production method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To produce a thin film in a state where damage to the base caused by halogen radicals is eliminated without reducing a film deposition rate. <P>SOLUTION: CuCl is produced on a substrate 3. Thereafter, the degree of the matching in a matching unit 9 is changed by a controlling means 11, so as to reduce reactive components. An impedance is changed, and effective electric power äincident energy: RF (radio frequency) power} is increased. Thus, the CuCl as the base is functioned as an etching protective film for chlorine radicals Cl*, so as to produce a thin film of a Cu component on the substrate 3 (on the barrier metal film), and the Cu film is produced in a state where damage to the base caused by the chlorine radicals Cl* is eliminated without reducing a film deposition rate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a thin film production apparatus and a thin film production method capable of suppressing damage to an object to be processed during thin film production without reducing the film production speed.

  Currently, in the manufacture of semiconductors and the like, film formation using a plasma CVD (Chemical Vapor Deposition) apparatus is known. A plasma CVD apparatus is a gas such as an organometallic complex, which is a material of a film introduced into a chamber as a vacuum processing container, is changed to a plasma state by a high frequency incident from a high frequency antenna, and the substrate surface is activated by active excited atoms in the plasma. This is an apparatus for forming a metal thin film or the like by promoting the chemical reaction.

  On the other hand, the present inventors installed a member to be etched, which is a metal component for producing a high vapor pressure halide, and made of a metal component desired to be formed into a chamber, and converted the halogen gas into plasma to form the member to be etched. A plasma CVD apparatus (hereinafter referred to as a new type of plasma CVD apparatus) that forms a precursor, which is a halide of a metal component, by etching with a radical of halogen, and deposits only the metal component of the precursor on a substrate. And a film forming method has been developed (for example, see Patent Document 1 below).

In the above-described plasma CVD apparatus of the new type, the metal film is formed on the substrate by controlling the temperature of the substrate to be lower than the temperature of the member to be etched which is a metal source to be formed. For example, when the metal of the member to be etched is M and the halogen gas is Cl ₂ , the member to be etched is controlled to a high temperature (for example, 300 ° C. to 700 ° C.) and the substrate is controlled to a low temperature (for example, about 200 ° C.) An M thin film can be formed on the substrate. This is thought to be due to the following reaction.

(I) Plasma dissociation reaction; Cl ₂ → 2Cl ^*
(Ii) Etching reaction; M + Cl ^* → MCl (g)
(Iii) Adsorption reaction on the substrate; MCl (g) → MCl (ad)
(Iv) Film formation reaction; MCl (ad) + Cl ^* → M + Cl ₂ ↑

Here, Cl ^* represents a Cl radical, (g) represents a gas state, and (ad) represents an adsorption state.

In the new type CVD apparatus, the film forming reaction is appropriately performed by keeping the ratio of MCl and Cl ^* appropriately. That is, as the film formation conditions, the ratio of MCl and Cl ^* is set by appropriately setting the flow rate of Cl ₂ gas, pressure, power, the temperature of the substrate and the member to be etched, the distance between the substrate and the member to be etched, and the like. It can be controlled almost equally, and M is deposited without reducing the deposition rate and without causing excessive etching by Cl ^{* on} the substrate.

However, even if the process conditions are set appropriately, it is difficult to always control the ratio of MCl and Cl ^* to be equal, and it is necessary to perform control such as observing the plasma state and performing feedback control of the process conditions. It was. In particular, if the ratio of Cl ^* is excessive, the substrate will be damaged. When a thin film is formed on a substrate on which a barrier metal or the like has been prepared in advance, conditions that do not damage the barrier metal are set. There was a need. For this reason, the present condition is that the process condition which attaches the apparatus for observation or gives priority to suppression of damage is set.

JP 2003-147534 A

  The present invention has been made in view of the above circumstances, and can produce a thin film while suppressing damage to the surface of the object to be processed without complicating the apparatus and without setting special process conditions. An object of the present invention is to provide a thin film manufacturing apparatus and a thin film manufacturing method.

  In order to achieve the above object, a thin film manufacturing apparatus according to a first aspect of the present invention includes a chamber in which an object to be processed is accommodated, a metal member to be etched containing a raw material, and halogen inside the chamber. A halogen-containing gas supply means for supplying a gas, and a metal component contained in the member to be etched by generating a halogen radical by plasmaizing the inside of the chamber to generate a halogen-containing gas plasma and etching the member to be etched with the halogen radical A plasma generating means for generating a precursor composed of carbon and halogen, a temperature control means for forming a metal component of the precursor by forming the temperature of the object to be processed lower than the temperature of the member to be etched, and a plasma generating means The metal component is prepared after preparing the precursor on the surface of the object by adjusting the plasma generation status. Characterized in that an adjusting means.

  In the present invention according to claim 1, the plasma generation state is adjusted by the adjusting means, and the metal component is produced after producing the precursor on the surface of the object to be processed. It is possible to suppress excessive etching of the metal component due to halogen radicals without setting appropriate process conditions and without decreasing the film formation rate.

  The thin film production apparatus of the present invention according to claim 2 is the thin film production apparatus according to claim 1, wherein the plasma generating means is connected to an AC power source via a matching unit having a variable capacitor capacity. A high-frequency antenna that enters an electromagnetic wave therein, and the adjusting means adjusts incident energy of the electromagnetic wave from the high-frequency antenna.

  In the present invention according to claim 2, by adjusting the incident energy of the electromagnetic wave from the high frequency antenna, the incident energy can be adjusted with good responsiveness, and the surface of the object to be processed can be adjusted without reducing the adjustment thin film production speed. The metal component can be made after making the precursor.

  The thin film production apparatus of the present invention according to claim 3 is the thin film production apparatus according to claim 2, wherein the adjusting means adjusts the active power by changing the impedance by changing the capacitor capacity of the matching unit. It is a means for adjusting the incident energy.

  In the present invention according to claim 3, by adjusting the active power by changing the impedance, the incident energy can be adjusted with good responsiveness by electrical control.

  The thin film production apparatus of the present invention according to claim 4 is the thin film production apparatus according to claim 2, wherein the adjusting means changes the degree of coupling with the plasma by changing the position of the high frequency antenna. It is an antenna lifting / lowering means for adjusting energy.

  In this invention which concerns on Claim 4, incident energy can be adjusted with sufficient responsiveness with a simple mechanism by raising / lowering a high frequency antenna by an antenna raising / lowering means.

  The thin film production apparatus of the present invention according to claim 5 is the thin film production apparatus according to claim 2, wherein the adjusting means is a metal member between the high frequency antenna and the chamber with respect to the current flow direction of the high frequency antenna. It is characterized by being a coupling degree changing means for adjusting the incident energy by discontinuously disposing and changing the degree of coupling with plasma.

  In this invention which concerns on Claim 5, incident energy can be adjusted with sufficient responsiveness with a simple mechanism by arrange | positioning a metal member between a high frequency antenna and a chamber.

  The thin film production apparatus of the present invention according to claim 6 is the thin film production apparatus according to claim 5, wherein the high frequency antenna is a planar ring-shaped antenna disposed on the upper surface of the chamber, and the coupling degree changing means is The Faraday plate is characterized in that metal members and insulating members are alternately arranged with respect to the direction of current flow of the high-frequency antenna.

  In this invention which concerns on Claim 6, incident energy can be adjusted with sufficient responsiveness with a simple mechanism by inserting the Faraday plate by which the metal member and the insulating member were alternately arranged.

  The thin film production apparatus of the present invention according to claim 7 is the thin film production apparatus according to any one of claims 1 to 6, wherein a tantalum nitride barrier metal is produced on the surface of the object to be processed. It is characterized by.

  In the present invention according to claim 7, a metal portion can be formed on the surface of tantalum nitride while suppressing excessive etching of the metal component by the halogen radical, and damage to the barrier metal can be suppressed.

  In order to achieve the above object, the thin film manufacturing method of the present invention according to claim 8 provides an electromagnetic wave from a high-frequency antenna fed with a gas containing halogen into a chamber in which an object to be processed is accommodated and fed from an AC power source. To generate a halogen-containing gas plasma to generate a halogen radical, and etching the metal member to be etched with the halogen radical generates a precursor composed of a metal component and halogen contained in the member to be etched. The temperature of the object to be processed is made lower than the temperature of the member to be etched, the effective power is adjusted by changing the impedance of the circuit by the high-frequency power source, and the metal component is prepared after preparing the precursor on the surface of the object to be processed It is characterized by doing.

  In the present invention according to claim 8, after adjusting the effective power by changing the impedance of the circuit, the incident energy is adjusted with good response by electrical control, and the precursor is produced on the surface of the object to be processed. Since the metal component is produced, excessive etching of the metal component due to halogen radicals can be suppressed without reducing the thin film production rate without performing control using an observation apparatus or setting special process conditions.

  In order to achieve the above object, the thin film manufacturing method of the present invention according to claim 9 is an electromagnetic wave from a high frequency antenna fed with a halogen-containing gas into a chamber in which an object to be processed is housed and fed from an AC power source. To generate a halogen-containing gas plasma to generate a halogen radical, and etching the metal member to be etched with the halogen radical generates a precursor composed of a metal component and halogen contained in the member to be etched. The temperature of the object to be processed is made lower than the temperature of the member to be etched, the degree of coupling with the plasma of the high frequency antenna is changed, and the metal component is prepared after preparing the precursor on the surface of the object to be processed And

  In the present invention according to claim 9, the incident energy is adjusted with good responsiveness by changing the degree of coupling with the plasma of the high frequency antenna, and the metal component is produced after the precursor is produced on the surface of the object to be processed. Further, it is possible to suppress excessive etching of the metal component due to halogen radicals without performing control using an observation apparatus or setting special process conditions and without reducing the thin film production rate.

  A thin film production method according to a tenth aspect of the present invention is the thin film production method according to the eighth or ninth aspect, wherein a metal component is formed on a target object having a surface formed with a tantalum nitride barrier metal. It is characterized by doing.

  In the present invention according to claim 10, a metal portion can be formed on the surface of tantalum nitride in a state where excessive etching of the metal component by halogen radicals is suppressed, and damage to the barrier metal can be suppressed.

  The thin film production apparatus and thin film production method of the present invention reduce the film formation rate by suppressing damage to the surface of the object to be processed without complicating the apparatus and without setting special process conditions. Thus, a thin film manufacturing apparatus and a thin film manufacturing method capable of manufacturing a thin film are provided.

  FIG. 1 is a schematic side view of a thin film production apparatus according to a first embodiment of the present invention, FIG. 2 is a time-dependent change of RF power, FIG. 3 is a concept of precursor and chlorine radical states, and FIG. FIG. 5 is a schematic side view of a thin film production apparatus according to the second embodiment of the present invention, FIG. 6 is a schematic side view of a thin film production apparatus according to the third embodiment of the present invention, and FIG. A plan view of the plate is shown.

In the first embodiment to the third embodiment, Cl ₂ gas as a working gas containing halogen is supplied into a chamber provided with a member to be etched made of copper (Cu) as metal, and induction plasma is generated. And generating Cl ₂ gas plasma to generate chlorine radicals (Cl ^* ), and etching the member to be etched with chlorine radicals (Cl ^* ) to thereby form a Cu component and a Cl ₂ gas component contained in the member to be etched. The precursor CuCl is produced, and the temperature on the substrate side is made lower than the temperature of the member to be etched, so that the Cu component in a state where the precursor CuCl is reduced by chlorine radicals (Cl ^* ) is adsorbed on the surface of the substrate ( This is a thin film manufacturing apparatus designed to be deposited). As an example, a barrier metal (tantalum nitride: TaN) for preventing the diffusion of the Cu thin film and improving the adhesion of the Cu component is formed on the surface of the substrate.

(First embodiment)
A first embodiment will be described with reference to FIGS.

  As shown in FIG. 1, a support base 2 is provided in the vicinity of the bottom of a chamber 1 made of, for example, ceramics (made of an insulating material), and a substrate 3 is placed on the support base 2. . A TaN barrier metal is formed on the surface of the substrate 3. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 300 ° C.) ) Is controlled. The shape of the chamber is not limited to a cylindrical shape, and for example, a rectangular chamber can be applied. Further, the temperature control means 6 for controlling the temperature of the substrate 3 is not limited to the heater 4 and the refrigerant flow means 5, and any means can be used as long as the temperature of the substrate 3 can be controlled to a predetermined temperature.

  The upper surface of the chamber 1 is an opening, and the opening is closed by a plate-like ceiling plate 7 made of an insulating material (for example, made of quartz). A plasma antenna 8 for converting the inside of the chamber 1 into plasma is provided above the ceiling plate 7, and the plasma antenna 8 is formed in a planar ring shape parallel to the surface of the ceiling plate 7. The plasma antenna 8 is connected to a matching unit 9 and a power source 10 as an AC power source, and is supplied with a high frequency. Plasma generating means for generating induction plasma is constituted by the plasma antenna 8, the matching unit 9 and the power source 10.

  The matching unit 9 is a variable capacitance type capacitor, and the matching degree (capacitor capacity) of the matching unit 9 is adjusted by the control unit 11 as the adjusting unit. By changing the degree of matching and increasing the ineffective amount (increasing reflection), the impedance is changed and the effective power (incident energy: RF power) is adjusted.

  In the chamber 1, a member to be etched 12 made of copper (Cu) as a metal is supported by an annular member 13 made of an insulator, and the member to be etched 12 has a lattice shape. Since the member 12 to be etched is in a lattice shape, it is disposed in a discontinuous state between the substrate 3 and the ceiling plate 7 with respect to the electric flow of the plasma antenna 8. That is, the member 12 to be etched is structurally discontinuous with respect to the circumferential direction, which is the direction of electricity flow of the plasma antenna 8.

  In addition, as a structure of the member to be etched that is discontinuous with respect to the electric flow of the plasma antenna 8, a protrusion extending toward the center of the chamber 1 is provided inside the annular member 13, or a mesh shape is formed. Or the like. The member to be etched is not limited to copper as long as it is a halide forming metal such as tantalum, tungsten, and titanium.

A gas nozzle 15 for supplying a chlorine-containing gas (Cl ₂ gas) 14 containing chlorine as a halogen to the inside of the chamber 1 is provided in the cylindrical portion of the chamber 1 above the member to be etched 12. A Cl ₂ gas 14 is sent to the gas nozzle 15 via a flow rate controller 16 whose flow rate and pressure are controlled (halogen-containing gas supply means).

  Gases that are not involved in film formation are exhausted from the exhaust port 17. The inside of the chamber 1 closed by the ceiling plate 7 is maintained at a predetermined pressure by the vacuum device 18.

In the thin film manufacturing apparatus described above, the Cl ₂ gas 14 is supplied from the gas nozzle 15 into the chamber 1. When the electromagnetic wave enters the chamber 1 from the plasma antenna 8, the Cl ₂ gas 14 is ionized to generate a Cl ₂ gas plasma 20, and Cl radicals are generated in the chamber 1. The reaction at this time can be expressed by the following formula.
Cl ₂ → 2Cl ^* (1)
Here, Cl ^* represents a chlorine radical.

The generated gas plasma 20 acts on the member to be etched 12 made of Cu, whereby the member to be etched 12 is heated and an etching reaction occurs in Cu with a uniform distribution. The reaction at this time is represented by the following formula, for example.
Cu (s) + Cl ^* → CuCl (g) (2)
Here, s represents a solid state and g represents a gas state. Formula (2) is a state in which Cu is etched by gas plasma (chlorine radical Cl ^* ) 18 to be a precursor 19.

The member to be etched 12 is heated by generating the gas plasma 20 (for example, 300 ° C. to 700 ° C.), and the temperature of the substrate 3 is lower than the temperature of the member to be etched 12 by the temperature control means 6 (for example, 100 ° C. to 300 ° C.). As a result, the uniformly distributed precursor 19 is adsorbed (deposited) on the substrate 3. The reaction at this time is represented by the following formula, for example.
CuCl (g) → CuCl (ad) (3)

CuCl adsorbed on the substrate 3 is reduced by the chlorine radical Cl ^* to become a Cu component. The reaction formula at this time is represented by the following formula, for example.
CuCl (ad) + Cl ^* → Cu (s) + Cl ₂ ↑ (4)

  In the thin film production apparatus described above, the following adjustment control is performed in the reactions of the equations (3) and (4).

The matching degree (capacitor capacity) of the matching unit 9 is adjusted by the control means 11. That is, as shown in FIG. 2, the reactive power is increased by changing the degree of matching at the initial stage of film fabrication (time t1) (increasing the reflection), and the impedance is changed to change the effective power (incident energy: RF power). ). Thereby, as shown in FIG. 3A, the supply amount of the chlorine radical Cl ^{* to} the substrate 3 is reduced, and as shown in FIG. 4A, the reduction reaction does not proceed and CuCl (precursor) is formed. It is fabricated on the substrate 3 (on the barrier metal film).

After producing CuCl on the substrate 3, the control unit 11 changes the matching degree of the matching unit 9 to reduce the ineffective component (reduces reflection) and changes the impedance to change the effective power (incident energy: RF power). Is increased (time t2 in FIG. 2). As a result, as shown in FIG. 3B, the supply amount of chlorine radical Cl ^{* to} the substrate 3 is reduced, and as shown in FIG. 4A, CuCl is reduced to form a thin film of Cu component. The The underlying CuCl functions as an etching protection film against the chlorine radical Cl ^* , and as shown in FIG. 4B, a Cu component thin film is formed on the substrate 3 (on the barrier metal film). That is, as a result, no CuCl remains on the substrate 3 (on the barrier metal film), and only the Cu film is formed (see FIG. 4C).

For this reason, it is possible to produce a Cu film without reducing the film formation rate in a state where damage to the base (barrier metal film: TaN in the present embodiment ⁾ caused by chlorine radical Cl ^* is eliminated. At this time, since the control unit 11 only controls the matching unit 9 to be adjusted, the observation unit or the like is not used to complicate the apparatus, and no special process conditions are set. Damage can be suppressed and a Cu film can be produced. Since the RF power is changed by changing the matching degree of the matching unit 9 by the control unit 11, the RF power can be changed without applying a load to the plasma antenna 8.

  In the adjustment control described above, the CuCl film on the substrate 3 can be formed thin by managing the time t1 shown in FIG. Thereby, reduction of Cl from CuCl becomes easy, and residual Cl in the thin film can be reduced. In addition, by appropriately controlling the times t1 and t2 shown in FIG. 2, two-stage thin film production or continuous thin film production can be selected and performed. By performing continuous thin film production, high throughput can be maintained.

(Second Embodiment)
A second embodiment of the present invention will be described based on FIG. In addition, the same code | symbol is attached | subjected to the same member as the 1st Embodiment shown in FIG. 1, and the overlapping description is abbreviate | omitted.

  As shown in the figure, the plasma antenna 8 is connected to a matching unit 21 and a power source 10 as an AC power source, and is supplied with a high frequency. The plasma antenna 8 can be moved up and down with respect to the ceiling plate 7 via the lifting means 22. The position of the plasma antenna 8 is changed by moving the plasma antenna 8 up and down (for example, 10 mm to 20 mm) by the lifting means 22. By changing the position of the plasma antenna 8, the degree of coupling with the plasma changes and the incident energy (RF power) can be changed.

  After the CuCl (precursor) is formed on the substrate 3 (on the barrier metal film), the plasma antenna 8 is moved up and down (changed in position) to change the RF power, as in the first embodiment. A thin film of Cu component is produced.

For this reason, it is possible to produce a Cu film without reducing the deposition rate in a state in which damage to the base due to chlorine radical Cl ^* is eliminated. At this time, since the control is only performed to raise and lower the plasma antenna 8 by the lifting means 22, the apparatus is not complicated by using observation means or the like, and without setting special process conditions, Damage can be suppressed and a Cu film can be produced. Since the RF power is changed by changing the degree of coupling with the plasma by raising and lowering the plasma antenna 8, the uniformity of the plasma can be maintained.

(Third embodiment)
A third embodiment of the present invention will be described with reference to FIGS. In addition, the same code | symbol is attached | subjected to the same member as the 1st Embodiment shown in FIG. 1, and the overlapping description is abbreviate | omitted.

  As shown in FIG. 6, the plasma antenna 8 is connected to a matching unit 21 and a power source 10 as an AC power source, and is supplied with a high frequency. A Faraday plate 25 in which metal members are discontinuously arranged with respect to the direction of current flow of the plasma antenna 8 can be inserted between the plasma antenna 8 and the ceiling plate 7. By inserting the Faraday plate 25 under the plasma antenna 8, the impedance can be changed and the incident energy (RF power) can be reduced.

  As shown in FIG. 7, the Faraday plate 25 is configured such that a metal piece 27 as a fan-shaped metal member is arranged in a circumferential direction on a frame body 26 made of a disk-shaped insulating material. Since the metal pieces 27 are discontinuously arranged in the circumferential direction, even when the Faraday plate 25 is inserted under the plasma antenna 8 (see FIG. 6), the generation of plasma in the chamber 1 (see FIG. 6) is affected. Will not affect. The Faraday plate 25 is automatically inserted when necessary by insertion means (not shown).

  In addition, it is also possible to adopt a configuration in which a plurality of metal pieces are individually inserted without using the Faraday plate 25.

  By inserting the Faraday plate 25 between the plasma antenna 8 and the ceiling plate 7 and changing the degree of coupling between the plasma antenna 8 and the plasma to reduce the RF power, CuCl (precursor) is obtained as in the first embodiment. Body) is formed on the substrate 3 (on the barrier metal film), and then the Faraday plate 25 is pulled out to change the degree of coupling between the plasma antenna 8 and the plasma to increase the RF power, thereby forming a Cu component thin film. Will come to be.

For this reason, it is possible to produce a Cu film without reducing the deposition rate in a state in which damage to the base due to chlorine radical Cl ^* is eliminated. At this time, since the control is only performed by the insertion and removal operations of the Faraday plate 25, damage to the substrate can be made without complicating the apparatus using observation means or the like and without setting special process conditions. Cu film can be produced while suppressing the above. Since the RF power is changed by changing the degree of coupling between the plasma antenna 8 and the plasma by interposing a metal member, the RF power can be changed with a simple mechanism and good response.

  INDUSTRIAL APPLICATION This invention can be utilized in the industrial field | area of the thin film preparation apparatus and thin film preparation method which can suppress the damage to the to-be-processed object at the time of thin film preparation, without reducing a film preparation speed.

1 is a schematic side view of a thin film production apparatus according to a first embodiment of the present invention. It is a graph showing a time-dependent change of RF power. It is a conceptual diagram of the state of a precursor and a chlorine radical. It is a conceptual diagram showing the thin film preparation condition. It is a schematic side view of the thin film preparation apparatus which concerns on the 2nd Example of this invention. It is a schematic side view of the thin film preparation apparatus which concerns on the 3rd Example of this invention. It is a top view of a Faraday plate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Chamber 2 Support stand 3 Substrate 4 Heater 5 Refrigerant distribution means 6 Temperature control means 7 Ceiling board 8 Plasma antenna 9, 21 Matching device 10 Power supply 11 Control means 12 Member to be etched 13 Ring member 14 Chlorine containing gas (Cl ₂ gas)
DESCRIPTION OF SYMBOLS 15 Gas nozzle 16 Flow controller 18 Vacuum apparatus 19 Precursor 20 Gas plasma 22 Lifting means 25 Faraday plate 26 Frame 27 Metal piece

Claims (10)

A chamber in which an object is accommodated;
A metal member to be etched containing raw materials;
Halogen-containing gas supply means for supplying a gas containing halogen into the chamber;
Plasma is generated inside the chamber to generate a halogen-containing gas plasma to generate halogen radicals and to etch a member to be etched with the halogen radicals, thereby generating a precursor composed of a metal component and halogen contained in the member to be etched. Generating means;
Temperature control means for forming a metal component of the precursor by forming the temperature of the object to be processed lower than the temperature of the member to be etched;
A thin film production apparatus comprising: an adjustment means for producing a metal component after producing a precursor on the surface of an object to be processed by adjusting a plasma generation state of the plasma generation means. The thin film manufacturing apparatus according to claim 1,
The plasma generating means is a high-frequency antenna that is connected to an AC power source through a matching unit having a variable capacitor capacity and that enters an electromagnetic wave into the chamber.
The adjusting means adjusts the incident energy of the electromagnetic wave from the high frequency antenna. The thin film manufacturing apparatus according to claim 2,
The adjustment means is means for adjusting the incident energy by adjusting the effective power by changing the impedance by changing the capacitor capacity of the matching device. The thin film manufacturing apparatus according to claim 2,
The adjustment means is an antenna lifting / lowering means for adjusting incident energy by changing the position of the high-frequency antenna and changing the degree of coupling with plasma. The thin film manufacturing apparatus according to claim 2,
The adjusting means is a coupling degree changing means for adjusting the incident energy by disposing a metal member discontinuously between the high frequency antenna and the chamber in the current flow direction of the high frequency antenna and changing the degree of coupling with the plasma. A thin film manufacturing apparatus characterized by The thin film manufacturing apparatus according to claim 5,
The high frequency antenna is a planar ring-shaped antenna arranged on the upper surface of the chamber,
The coupling degree changing means is a Faraday plate in which metal members and insulating members are alternately arranged with respect to the direction of current flow of the high-frequency antenna. In the thin film production apparatus according to any one of claims 1 to 6,
A tantalum nitride barrier metal is formed on the surface of the object to be processed. Supplying a gas containing halogen into a chamber in which the object to be processed is accommodated;
Incident electromagnetic waves from a high-frequency antenna fed from an AC power source to generate halogen-containing gas plasma to generate halogen radicals,
Etching a metal member to be etched with halogen radicals generates a precursor composed of a metal component and halogen contained in the member to be etched,
The temperature of the object to be processed is made lower than the temperature of the member to be etched, the effective power is adjusted by changing the impedance of the circuit by the high frequency power source, and the metal component is prepared after the precursor is prepared on the surface of the object to be processed. A thin film manufacturing method characterized by the above. Supplying a gas containing halogen into a chamber in which the object to be processed is accommodated;
Incident electromagnetic waves from a high-frequency antenna fed from an AC power source to generate halogen-containing gas plasma to generate halogen radicals,
Etching a metal member to be etched with halogen radicals generates a precursor composed of a metal component and halogen contained in the member to be etched,
The temperature of the object to be processed is made lower than the temperature of the member to be etched, the degree of coupling with the plasma of the high frequency antenna is changed, and the metal component is prepared after the precursor is prepared on the surface of the object to be processed. Thin film manufacturing method. In the thin film manufacturing method according to claim 8 or 9,
A method for producing a thin film, comprising depositing a metal component on an object to be processed on which a tantalum nitride barrier metal is produced.

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