JP2008077880A - Organic light-emitting diode element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic light-emitting diode element capable of eliminating the reflected light of an external light ray, using light interference. <P>SOLUTION: In this organic light-emitting diode element 2, a color filter 27, a transparent conductive layer 22, a translucent conductive layer 23, a transparent positive electrode layer 24, an organic layer 25 and a negative electrode layer 26 are formed sequentially on a transparent substrate 21. A part of the external light ray MO is reflected at the transparent conductive layer 23, as first reflected light M1, and another part thereof permeates the translucent conductive layer 23 and is reflected on the negative electrode layer 26, as second reflected light M2. The first reflected light and the second reflected light satisfy the expression 2L/λmax+ψ/(2π)=m+1/2, where L is the sum of optical film thicknesses of the transparent conductive layer 22, the transparent positive electrode layer 24 and the organic layer 25; ψ is the difference between the phase of the first reflected light M1 and that of the second reflected light M2; m is an integer; and λmax is the wavelength, at which the transmittance of the color filter 27 becomes maximum. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an organic light-emitting diode element, and more particularly, to an organic light-emitting diode element that uses optical interference to cancel light reflection of external light rays.

  Organic light-emitting diode elements can produce red, green, and blue light with high luminous efficiency, can be driven with a low driving voltage (for example, about several volts), and have a wide viewing angle so that images can be observed. Applications of organic light emitting diode elements in displays are becoming important.

  FIG. 1 is a cross-sectional view of a conventional organic light emitting diode element. The organic light emitting diode element mainly includes a glass substrate 10, an anode electrode layer 12, an organic layer 14, and a cathode electrode layer 16. The organic layer 14 includes a hole injection layer (not shown), a hole transport layer (not shown), a light emitting layer (not shown), an electron transport layer (not shown), and an electron injection from the bottom to the top in the figure. Layers are included in order. The anode electrode layer 12 is made of indium tin oxide (ITO), which is usually transparent and conductive. The cathode electrode layer 16 typically has a low-work function and is formed from a highly reflective metal.

  When a voltage is applied across the organic layer 14, the organic layer 14 emits light, and light is emitted in each direction from the organic light emitting diode element. Since the cathode electrode layer 16 is made of a highly reflective metal, the light generated by the organic layer 14 is reflected by the cathode electrode layer 16, and this reflected light is reflected by the organic layer 14, the transparent anode electrode layer 12, and the glass substrate 10. The light emission brightness of the organic light-emitting diode element is increased.

  However, light rays that are incident on the organic light emitting diode element from the outside (hereinafter referred to as external light rays) also pass through the transparent substrate 10 and are reflected by the cathode electrode 16, and the reflected external light rays are displayed on the display. In order to reduce the contrast of the panel, the display on the display is unclear.

Patent Document 1 discloses an organic light emitting device using a non-reflective laminated structure having a structure in which a second semi-transmissive layer made of an organic EL material is sandwiched between a first semi-transmissive layer made of an aluminum thin film and a highly reflective layer as a cathode electrode. A diode element is disclosed. In this organic light emitting diode element, since reflection at the cathode electrode is reduced, a decrease in contrast of the display panel due to external light rays is prevented.
JP 2004-127725 A (see FIGS. 4 to 7 and paragraphs [0033] to [0045])

  However, according to the configuration described in Patent Document 1, the cathode electrode 16 prevents reflection of light emitted from the organic layer 14 as well as external light, so that the light emission luminance of the organic light emitting diode element is also reduced. There is a risk that.

  Therefore, the present invention has been made in view of the above problems, and improves the configuration of an electrode layer (for example, an anode) disposed between an organic layer and a transparent substrate to prevent a decrease in contrast of the display panel. An object of the present invention is to provide an organic light emitting diode element that can be used.

  Specifically, the present invention pays attention to the fact that the organic light emitting diode element has a film layer structure, and the thickness of each layer can be precisely designed, and the reflected light of the external light beam is erased using optical interference, The object is to improve the contrast of the display panel.

  An organic light-emitting diode element according to the present invention is an organic light-emitting diode element that erases reflected light of an external ray using optical interference, and includes a transparent substrate, a transparent conductive layer formed on the transparent substrate, and a transparent conductive layer. A translucent conductive layer formed on the transparent first electrode layer formed on the translucent conductive layer, an organic layer formed on the transparent first electrode layer, and a reflective first layer formed on the organic layer. 2 electrode layers. Then, a part of the external light incident from the transparent substrate side is reflected as the first reflected light in the semitransparent conductive layer, and the other part is transmitted through the semitransparent conductive layer. The electrode layer is reflected as the second reflected light, and the first reflected light and the second reflected light interfere with each other, and at least a part thereof is canceled out.

  When the organic light emitting diode element further has a selective transmission according to the wavelength and further includes a color filter layer disposed on the transparent substrate side with respect to the transparent conductive layer, the external light transmitted through the color filter layer is light interference. Will at least partially cancel.

  The color filter layer has a maximum transmittance of a predetermined wavelength in the visible light region, and the thickness of the transparent first electrode layer is such that the first reflected light and the second reflected light of the predetermined wavelength are interfered with each other, and at least one It is set to cancel the part.

The organic light emitting diode element satisfies the formula (1).
2L / λmax + φ / (2π) = m + 1/2 (1)
(L is the sum of the optical film thicknesses of the semitransparent conductive layer, the transparent first electrode layer, and the organic layer, λmax is the wavelength at which the transmittance of the color filter layer is maximized, and φ is the first for the same external ray. (The phase difference between the first reflected light and the second reflected light, m is an integer.)

  When the color filter layer includes first and second filter layers that transmit light of different colors, the thickness of the transparent first electrode layer formed on the first filter layer is set above the second filter layer. It is preferable that the thickness of the transparent first electrode layer is different from that of the first electrode layer. Then, at least a part of the external light beam transmitted through each of the first and second filter layers is canceled by optical interference.

  The first filter layer has the maximum transmittance at the first predetermined wavelength, and the second filter layer has the maximum transmittance at the second predetermined wavelength, which is a wavelength different from the first predetermined wavelength. The thickness of the transparent first electrode layer formed on the layer is set so that the first reflected light and the second reflected light having the first predetermined wavelength are interfered with each other and at least a part thereof is canceled out. The thickness of the transparent first electrode layer formed on the second filter layer is such that the first reflected light and the second reflected light of the light having the second predetermined wavelength are interfered with each other and at least a part thereof is canceled out. It is preferable that it is set to.

  The translucent conductive layer may be a metal material or a conductive light reflective material, and for example, any of silver, gold, aluminum, and nickel is used as the metal material. For example, as the conductive light reflective material, any of a ceramic structure, calcium titanate, and a nonconductive material to which a metal material is added is used. The physical thickness of the translucent conductive layer is, for example, 1 nm to 50 nm. The translucent conductive layer is preferably formed by vacuum deposition or sputtering.

  The transparent conductive layer includes, for example, indium tin oxide, and the reflective second electrode layer has reflectivity and non-transparency, and includes, for example, a metal. The transparent first electrode layer contains, for example, indium tin oxide. The transparent first electrode layer is, for example, an anode, and the reflective second electrode layer is, for example, a cathode. The total physical thickness of the transparent conductive layer and the transparent first electrode layer is preferably 170 nm to 300 nm.

  As described above, the organic light-emitting diode element of the present invention is provided with the semitransparent conductive layer and the transparent first electrode layer on the first electrode layer side, and the reflection of external light by adjusting the thickness of each layer. Light is prevented from being emitted to the outside. Further, since the transparent conductive layer is formed on the transparent substrate side of the semitransparent conductive layer on the first electrode layer side, the conductivity of the transparent first electrode layer is compensated.

The present invention will be described below with reference to the accompanying drawings.
FIG. 2 is a cross-sectional view according to a first embodiment of the organic light-emitting diode element of the present invention. In the first embodiment, the organic light emitting diode element 2 includes a transparent substrate 21, a transparent conductive layer 22, a semi-transparent conductive layer 23, a transparent anode electrode layer 24 (transparent first electrode layer), an organic A layer 25, a cathode electrode layer 26 (reflective second electrode layer), a color filter layer 27, and a power source 40. The material of the transparent substrate 21 is, for example, glass, ceramic, or plastic material. The color filter layer 27 is a color filter that is formed on the transparent substrate 21 and is made of glass, plastic, or the like, and transmits light of a predetermined color. For example, any of blue, red, and green light Is transparent. That is, the color filter layer 27 has selective transparency according to the wavelength, and the transmittance at a predetermined wavelength in the visible light region is maximized. The color filter layer 27 may be formed below the transparent substrate 21 in FIG.

  The transparent conductive layer 22 is formed on the color filter layer 27. As a material of the transparent conductive layer 22, for example, indium tin oxide (ITO) is used. Note that a transparent protective film or the like that appropriately protects the color filter layer 27 and smoothes the upper surface of the color filter layer 27 may be formed between the color filter layer 27 and the transparent electrode layer 22.

  The translucent conductive layer 23 is laminated on the transparent conductive layer 22, and its physical thickness is limited from the viewpoints of transparency and reflectivity, and is set to, for example, 1 nm to 50 nm. As the material of the translucent conductive layer 23, a metal material such as silver, gold, aluminum, or nickel, a light-reflective conductive material of a ceramic or a non-metallic conductive material of a calcium titanate structure, or a metal in a non-conductive material A material added with a material or the like may be used.

  The translucent conductive layer 23 is laminated on the transparent conductive layer 22 by vacuum evaporation or sputtering. The transparent anode electrode layer 24 is laminated on the translucent conductive layer 23 and is made of, for example, indium tin oxide. The total physical thickness of the transparent conductive layer 22 and the transparent anode electrode layer 24 is required to be at least 170 nm or more, preferably 220 nm to 300 nm, in order to ensure the conductivity of the anode.

  The organic layer 25 is laminated on the transparent anode electrode layer 24. For example, in order from the anode side, a hole injection layer (not shown), a hole transport layer (not shown), a light emitting layer (not shown), an electron transport layer. (Not shown) and an electron injection layer are laminated.

  The light emitting layer is, for example, a low molecular electric excitation light emitting thin film, and in this case, is formed by vacuum vapor deposition. The light emitting layer is, for example, a polymer electroexcited light emitting thin film, and in this case, the light emitting layer is formed using a method such as spin coating, ink jetting, or screen printing. The cathode electrode layer 26 is a general metal cathode electrode layer, and is laminated on the organic layer 25. That is, the cathode electrode layer 26 is formed of a material that is non-transmissive and reflective.

  The power source 40 is connected to the cathode electrode layer 26 and the transparent conductive layer 22, and inputs current to the organic layer 25. The organic layer 25 emits, for example, white light when an electric current is input, and the white light emitted from the organic layer 25 is partially reflected by the cathode electrode layer 26 and then a predetermined color filter layer 27 It is converted into colored light and irradiated outside.

  Hereinafter, the operation of the organic light emitting diode element 2 according to the present embodiment will be described. In the following description, the external light ray M0 is white light, the color filter layer 27 is a blue filter layer, and the wavelength at which the transmittance of the color filter layer 27 is maximized (hereinafter referred to as λmax) is 450 nm. A case where

  When the external light ray M0 is incident on the color filter layer 27 through the transparent substrate 21, red and green light in the external light ray M0 is absorbed by the color filter layer 27, and the light transmitted through the color filter layer 27 has an intensity. Becomes a blue light whose wavelength is λmax (450 nm).

  A part of the light transmitted through the color filter layer 27 is reflected by the semitransparent conductive layer 23 with the reflectance R1, and is emitted to the outside as the first reflected light M1, and the other part is semitransparent conductive layer. 23, is reflected by the cathode electrode layer 26 at the reflectance R2, and is emitted to the outside as the second reflected light M2. The reflectance R1 is set lower than the reflectance R2.

  In the present embodiment, since the translucent conductive layer 23, the transparent anode electrode layer 24, and the organic layer 25 are film layers and have a predetermined thickness, the optical path of the first reflected light M1 in the organic light emitting diode element 2 An optical path difference is generated between the second reflected light and the optical path M2. Due to this optical path difference, destructive interference occurs in the waves of the first and second reflected lights M1 and M2, and the first reflected light M1 and the second reflected light M2 cancel each other. In this example, the translucent conductive layer 23 and the transparent anode electrode layer 24 are so arranged that light having a wavelength of λmax (450 nm) is erased by destructive interference at a higher rate than light of other wavelengths. And the thickness of the organic layer 25 is designed to satisfy the following formula (1).

2L / λmax + φ / (2π) = m + 1/2 (1)
In formula (1), L is the sum of the optical film thickness of the translucent conductive layer 23, the optical film thickness of the transparent anode electrode layer 24, and the optical film thickness of the organic layer 25. φ is the phase difference between the first reflected light M1 and the second reflected light M2, and m is an integer. In Expression (1), the incident angle of the external ray is assumed to be 0 °, but it is most important to erase the light near the incident angle of 0 ° in the display panel.

  When the expression (1) is satisfied, light having a wavelength λmax (450 nm) and a wavelength near λmax is erased by destructive interference, and a blue external light is effectively erased by destructive interference. Become. In addition, since the red and green external rays are absorbed by the color filter layer 27 as described above, the external rays can be effectively erased by the combination of the color filter layer 27 and destructive interference in this embodiment. It becomes.

In the present embodiment, for example, when φ = 0 and m = 1, the expression (1) can be expressed as follows.
2L / λmax = 3/2 (1) ′

  From the above formula (1) ′, when λmax = 450 nm, L = 337.5 nm, but the optical film thickness of the organic layer 25 is limited by the layer configuration, and is, for example, 150 nm. Moreover, the optical film thickness of the translucent conductive layer 23 is limited from the viewpoint of transparency and reflectivity as described above, and is set to 20 nm, for example. On the other hand, the optical film thickness of the transparent anode electrode layer 24 is set relatively freely, and is set to 167.5 nm so that L = 337.5 nm, so that the blue external light is effective due to destructive interference. Will be erased.

When the transparent anode electrode layer 24 is made of ITO, the refractive index is 2.1, and the physical thickness of the transparent anode electrode layer 24 is 80 nm from the formula (2), and the transparent electrode layer 22 The physical thickness is set without any particular limitation, and is, for example, 140 nm. Therefore, in this embodiment, the total physical thickness of the transparent conductive layer 22 and the transparent anode electrode layer 24 is 220 nm, and the conductivity of the anode is sufficiently compensated.
n × d = 1 (2)
(Where n is the refractive index, d is the physical thickness, and l is the optical film thickness.)

  As described above, in the present embodiment, the combination of the color filter layer 27 and the destructive interference can effectively erase the external light beam incident on the organic light emitting diode element 2, thereby preventing reflection of the external light beam. The contrast of the organic light emitting diode element 2 is prevented from being lowered. Further, the transparent anode electrode layer 24 is thin, and this layer alone cannot sufficiently secure the conductivity of the anode. However, in this embodiment, the provision of the transparent conductive layer 22 compensates for the conductivity of the anode. The Moreover, since the structure of the organic light emitting diode element 2 has a simple structure as in the conventional case, the contrast of the panel can be improved without complicating the manufacturing process.

  In the present embodiment, the case where the color filter layer 27 is a blue filter layer and λmax = 450 nm has been described. However, the color filter layer 27 is not particularly limited as long as λmax is in the visible light range. 27 may be other color filter layers such as a green filter layer and a red filter layer. In the above formula (1), m may be an integer other than 1, but if m = 2, 3 or the like, the thickness of the transparent anode electrode layer 24 becomes too large, and therefore m = 1 is preferable. Furthermore, the thickness of the organic layer 25 is appropriately changed depending on the layer configuration, and when the thickness of the organic layer 25 is changed, the thickness of the transparent anode electrode layer 24 and the transparent electrode layer 22 is the thickness thereof. It is changed according to. Further, the semitransparent conductive layer 23 can also be changed within a predetermined range, and in this case, the thicknesses of the layers 22 and 24 are similarly changed as appropriate.

  The organic light emitting diode element of the present invention may be provided with three color filters in order to realize a full color display. FIG. 3 shows a cross-sectional view of the second embodiment of the present invention, in which the organic light emitting diode element 2 ′ includes three color filters.

  As shown in FIG. 3, in the present embodiment, a red filter layer 27 </ b> R, a green filter layer 27 </ b> G, and a blue filter layer 27 </ b> B are formed on the transparent substrate 21. On the filter layers 27R, 27G, and 27B, the transparent conductive layers 22R, 22G, and 22B, the semi-transparent conductive layers 23R, 23G, and 23B, the transparent anode electrode layer 24R, 24G, 24B (transparent first electrode layer), organic layers 25R, 25G, 25B, cathode electrode layers 26R, 26G, 26B (reflective second electrode layer) are formed. In addition, about each point provided with the structure similar to 1st Embodiment, the description is abbreviate | omitted. In the following description, it is assumed that the external light incident on the organic light emitting diode element 2 'is white light.

  In the present embodiment, each organic layer 25R, 25G, 25B emits white light when a current is input from a power source (not shown) connected to the transparent conductive layer and the cathode electrode layer. The white light is converted into red, green, and blue light by the red filter layer 27R, the green filter layer 27G, and the blue filter layer 27B, and is irradiated to the outside. The external light beam M0 is converted into red, green, and blue light by the red filter layer 27R, the green filter layer 27G, and the blue filter layer 27B, respectively, and enters the organic light emitting diode element 2 '. For example, a part of the external light M0 that has passed through the red filter layer 27R and entered the organic light emitting diode element 2 ′ is reflected by the translucent conductive layer 23R with a reflectance R1, and is externally provided as the first reflected light M1. The other part is transmitted through the semi-transparent conductive layer 23R, reflected by the cathode electrode layer 26R at the reflectance R2, and emitted to the outside as the second reflected light M2.

  The red filter layer 27R has a wavelength λmax with a maximum transmittance of, for example, 650 nm, and the external light ray M0 transmitted through the red filter layer 27R is a red light having a wavelength with a maximum intensity of λmax (650 nm). is there. Accordingly, the film thicknesses of the translucent conductive layer 23R, the transparent anode electrode layer 24R, and the organic layer 25R formed on the red filter layer 27R are described above so that light having a wavelength of λmax is most effectively erased. It is designed to satisfy the formula (1).

  When the optical film thickness of each layer is designed so as to satisfy the formula (1), the reflected light M1 and M2 of the external rays transmitted through the red filter layer 27R are destroyed and interfered with each other, and are effectively erased. It becomes. Furthermore, since the green and blue external rays are absorbed by the red filter layer 27R, in this embodiment, the external rays incident on the red filter layer 27R are more effective due to the combination of the red filter layer 27R and destructive interference. Will be erased.

  From the above formula (1) ′, when λmax = 650 nm, for example, L = 487.5 nm, but as described above, the optical film thicknesses of the organic layer 25R and the semitransparent conductive layer 23R are limited, and each is, for example, 150 nm. 20 nm. Therefore, the optical film thickness of the transparent anode electrode layer 24R is set to 317.5 nm.

  When the transparent anode electrode layer 24R is made of ITO, the physical thickness of the transparent anode electrode layer 24R is 151 nm from the above formula (2), and the physical thickness of the transparent electrode layer 22R is not particularly limited. For example, it is set to 69 nm. Therefore, in this embodiment, the total physical thickness of the transparent conductive layer 22R and the transparent anode electrode layer 24R is, for example, 220 nm, and the conductivity of the anode is sufficiently compensated.

  The green filter layer 27G has a wavelength λmax with a maximum transmittance of, for example, 550 nm, and the external light ray M0 transmitted through the green filter layer 27G is a green light with a wavelength having a maximum intensity of λmax (550 nm). is there. Therefore, the film thicknesses of the semitransparent conductive layer 23G, the transparent anode electrode layer 24G, and the organic layer 25G satisfy the above-described formula (1) so that light having a wavelength of λmax is most effectively erased. Is set.

  When the optical film thickness of each layer is designed so as to satisfy the formula (1), the reflected light M1 and M2 of the external light transmitted through the green filter layer 27G can be effectively erased by destructive interference. Become. In addition, since the blue and red external rays are absorbed by the green filter layer 27G, the external rays incident on the organic light emitting diode 2 ′ from the green filter layer 27G are effective by the combination of the green filter layer 27G and destructive interference. Will be erased.

  That is, in the above formula (1) ′, when λmax = 550 nm, for example, L = 412.5 nm. However, as described above, the optical film thickness of the organic layer 25G and the semitransparent conductive layer 23G is limited. 150 nm and 20 nm. Therefore, the optical film thickness of the transparent anode electrode layer 24G is set to 242.5 nm.

  When the transparent anode electrode layer 24G is made of ITO, the physical thickness of the transparent anode electrode layer 24G is 115 nm from the above formula (2), and the physical thickness of the transparent electrode layer 22G is not particularly limited. For example, it is set to 105 nm. Therefore, in the present embodiment, the total physical thickness of the transparent conductive layer 22G and the transparent anode electrode layer 24G laminated on the green filter layer 27G is 220 nm, and the conductivity of the anode is sufficiently compensated. .

  The thickness of each layer formed on the blue filter layer 27B is also set in the same manner as in the first embodiment so as to satisfy the above formula (1), and external light incident on the blue filter layer 27B is also It is effectively erased by the combination of the blue filter layer 27B and destructive interference. Note that the optical film thickness of each of the organic layer 25B, the semitransparent conductive layer 23B, and the transparent anode electrode layer 24B is set to 150 nm, 20 nm, and 167.5 nm, for example, and external light transmitted through the blue filter layer 27B is effective due to destructive interference. Will be erased. On the other hand, the physical thickness of the transparent electrode layer 22B is set to 140 nm, for example, and the conductivity on the anode side is sufficiently compensated.

  As described above, in the present embodiment, the optical film thicknesses of the transparent anode electrode layers 24R, 24G, and 24B formed on the filter layers 27R, 27G, and 27B are different, and are set according to the wavelength λmax. Is done. Therefore, the external light incident on the organic light emitting diode 2 'is effectively erased by the combination of each filter layer and destructive interference. Also in the present embodiment, the provision of the transparent conductive layer 22 compensates for the conductivity of the transparent anode electrode layer 24.

  In the present embodiment, the physical thicknesses of the transparent conductive layers 22R, 22G, and 22B are set to be different from each other, and the total physical thickness of the transparent conductive layer, the semitransparent conductive layer, and the transparent anode electrode layer is set. The thickness becomes equal. Therefore, the height positions of the upper surfaces of the transparent anode electrode layers 24R, 24G, and 24B are equalized, which facilitates the lamination of the organic layer and the cathode electrode layer.

  FIG. 4 is a diagram illustrating a modification of the second embodiment. In the second embodiment, the organic layers 25R, 25G, and 25B laminated on the transparent anode electrode layers 24R, 24G, and 24B are laminated independently, but in this modification, as shown in FIG. The organic layers stacked on the transparent anode electrode layers 24R, 24G, and 25B are composed of the same organic layer 25. Further, a cathode layer 26 that sandwiches the organic layer 25 together with the transparent anode electrode layers 24R, 24G, and 25B is also laminated across the transparent anode electrode layers 24R, 24G, and 25B. With such a configuration, for example, the single organic layer 25 can be sandwiched between a plurality of anodes arranged in the same direction and a plurality of cathodes arranged in the vertical direction. Since other configurations are the same as those of the second embodiment, the description thereof is omitted.

  In the first and second embodiments, the transparent first electrode layer is an anode and the reflective second electrode layer is a cathode. However, the transparent first electrode layer is a transparent cathode and is reflective. The reflective second electrode layer may be a reflective anode. Moreover, the above description is only description of embodiment of this invention, and does not restrict | limit the claim of this invention.

It is sectional drawing of the conventional organic light emitting diode element. 1 is a cross-sectional view of an organic light emitting diode element according to a first embodiment of the present invention. It is sectional drawing of the organic light emitting diode element which concerns on the 2nd Embodiment of this invention. It is sectional drawing of the organic light emitting diode element which concerns on the modification of the 2nd Embodiment of this invention.

Explanation of symbols

2, 2 'organic light emitting diode element 21, 21R, 21G, 21B Transparent substrate 22, 22R, 22G, 22B Transparent conductive layer 23, 23R, 23G, 23B Translucent conductive layer 24, 24R, 24G, 24B Transparent anode electrode layer ( Transparent first electrode layer)
25, 25R, 25G, 25B Organic layer 26, 26R, 26G, 26B Cathode electrode layer (reflective second electrode layer)
27 Color filter 27R Red filter layer 28G Green filter glass 29B Blue filter glass

Claims (15)

In an organic light emitting diode element that erases reflected light of external rays using light interference,
A transparent substrate;
A transparent conductive layer formed on the transparent substrate;
A translucent conductive layer formed on the transparent conductive layer;
A transparent first electrode layer formed on the translucent conductive layer;
An organic layer formed on the transparent first electrode layer;
A reflective second electrode layer formed on the organic layer,
A part of the external light beam incident from the transparent substrate side is reflected as the first reflected light in the semitransparent conductive layer, and the other part is transmitted through the semitransparent conductive layer. Reflected as second reflected light in the second electrode layer,
The organic light emitting diode element according to claim 1, wherein the first reflected light and the second reflected light interfere with each other and at least a part thereof is canceled out. A color filter layer having selective transparency according to a wavelength, and further disposed on the transparent substrate side from the transparent conductive layer;
2. The organic light emitting diode element according to claim 1, wherein at least a part of the external light beam transmitted through the color filter layer is canceled by the optical interference. The color filter layer has a maximum transmittance of a predetermined wavelength in the visible light region,
The thickness of the transparent first electrode layer is set so that the first reflected light and the second reflected light having the predetermined wavelength are interfered with each other and at least a part thereof is canceled out. An organic light-emitting diode element as described in 1. The organic light-emitting diode element according to claim 2, wherein the organic light-emitting diode element satisfies the formula (1).
2L / λmax + φ / (2π) = m + 1/2 (1)
(L is the sum of the optical film thicknesses of the translucent conductive layer, the transparent first electrode layer, and the organic layer, λmax is the wavelength at which the transmittance of the color filter layer is maximized, and φ is the same for the same external ray. (The phase difference between the first reflected light and the second reflected light, m is an integer.) The color filter layer includes first and second filter layers that transmit light of different colors, respectively.
The thickness of the transparent first electrode layer formed on the first filter layer is different from the thickness of the transparent first electrode layer formed on the second filter layer,
The organic light emitting diode element according to claim 2, wherein at least a part of the external light beam transmitted through each of the first and second filter layers is canceled by the optical interference. The first filter layer has a maximum transmittance at a first predetermined wavelength, and the second filter layer has a maximum transmittance at a second predetermined wavelength, which is a wavelength different from the first predetermined wavelength,
The thickness of the transparent first electrode layer formed on the first filter layer is such that the first reflected light and the second reflected light having the first predetermined wavelength are caused to interfere with each other and at least a part thereof is canceled out. Is set to
The thickness of the transparent first electrode layer formed on the second filter layer is such that the first reflected light and the second reflected light of the second predetermined wavelength light interfere with each other, and at least a part thereof is canceled out. The organic light emitting diode element according to claim 5, wherein the organic light emitting diode element is set to be   The organic light emitting diode element according to claim 1, wherein the translucent conductive layer has a physical thickness of 1 nm to 50 nm.   The organic light-emitting diode element according to claim 1, wherein the translucent conductive layer is a metal material or a conductive light-reflective material.   9. The organic light emitting diode element according to claim 8, wherein the semitransparent conductive layer includes any one of silver, gold, aluminum, and nickel.   The organic light-emitting diode element according to claim 8, wherein the semi-transparent conductive layer includes any one of a ceramic structure, calcium titanate, and a non-conductive material to which a metal material is added.   The organic light-emitting diode element according to claim 1, wherein the transparent conductive layer includes indium tin oxide.   The organic light-emitting diode element according to claim 1, wherein the semitransparent conductive layer is formed by vacuum deposition or sputtering.   The organic light emitting diode element according to claim 1, wherein the reflective second electrode layer includes a metal.   The organic light-emitting diode element according to claim 1, wherein the transparent first electrode layer includes indium tin oxide.   The organic light emitting diode element of claim 1, wherein the total physical thickness of the transparent conductive layer and the transparent first electrode layer is 170 nm to 300 nm.

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