JP2008076770A - Substrate for organic semiconductor element, substrate with organic transistor, and organic semiconductor element using them - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate for an organic semiconductor element from which the organic semiconductor element using an organic transistor and having time-lapse stability of performance can be manufactured, and to provide a substrate with the organic transistor. <P>SOLUTION: The substrate for the organic semiconductor element is characterized in that it has a substrate, a transparent electrode formed on the substrate, and a frame-shaped partition wall part for organic transistor protection formed on the transparent electrode and having an opening part. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate for an organic semiconductor element used for an organic semiconductor element, a substrate with an organic transistor, and an organic semiconductor element using these.

  In recent years, semiconductor transistors typified by TFTs tend to expand their applications with the development of display devices. Such a semiconductor transistor functions as a switching element when electrodes are connected via a semiconductor material.

  Conventionally, inorganic semiconductor materials such as silicon (Si), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs) have been used as semiconductor materials used in the semiconductor transistors. A semiconductor transistor using such an inorganic semiconductor material is also used for a TFT array substrate for a display of a liquid crystal display device which has been spreading in recent years.

  On the other hand, as the semiconductor material, an organic semiconductor material made of an organic compound is also known. The organic semiconductor material has an advantage that the area can be increased at a lower cost than the inorganic semiconductor material and can be formed on a flexible plastic substrate. It also has the advantage of being stable against mechanical shock. For this reason, an organic transistor using an organic semiconductor material has been actively studied assuming application to a next-generation display device such as a flexible display typified by electronic paper.

  By the way, the organic semiconductor material has the advantages as described above, but it is destroyed or exposed to moisture or oxygen in the air, etc. Has the aspect of being easily damaged. This is a problem that appears prominently in organic semiconductor materials. Therefore, when an organic transistor using the organic semiconductor material is put into practical use in a display device or the like, it is an essential technical problem to prevent such deterioration of the organic semiconductor material over time.

Under such circumstances, Patent Documents 1 and 2 disclose a technique for preventing deterioration of an organic semiconductor material over time by forming a passivation layer on the organic semiconductor layer made of the organic semiconductor material.
However, even if such a passivation layer is formed, the deterioration over time of the organic semiconductor material cannot be sufficiently prevented. In addition, as described above, the organic semiconductor material may lose its properties as a semiconductor by the action with other compounds. Therefore, as in Patent Document 1, when a passivation layer is formed on the organic semiconductor layer, The organic semiconductor layer is destroyed due to the film stress of the passivation, or the organic semiconductor layer is heated at a high temperature in the process of forming the passivation layer, thereby causing deterioration of the semiconductor performance of the organic semiconductor layer. . Furthermore, since the passivation layer is in contact with the organic semiconductor layer, there is a problem that the organic semiconductor material is destroyed due to this, and the properties as the semiconductor are deteriorated over time.

  For this reason, the organic transistor using the organic semiconductor has a problem that it is difficult to obtain a transistor with excellent performance stability over time while its usefulness is recognized.

JP 2004-247343 A JP-A-8-306955

  The present invention has been made in view of such problems, and is an organic semiconductor element using an organic transistor, which is capable of producing an organic semiconductor element having excellent performance stability over time. The main object is to provide a substrate for a semiconductor element and a substrate with an organic transistor.

  In order to solve the above problems, the present invention includes a substrate, a transparent electrode formed on the substrate, and a frame-shaped organic transistor protection partition wall formed on the transparent electrode and having an opening. An organic semiconductor device substrate is provided.

  According to the present invention, for example, when an organic semiconductor element is manufactured using the organic semiconductor element substrate of the present invention, the organic transistor is accommodated in the opening of the organic transistor protection partition wall. It is possible to prevent the organic transistor from being destroyed by contact with other compounds or being deteriorated with time. For this reason, according to the substrate for organic semiconductor elements of the present invention, an organic semiconductor element having excellent performance stability over time can be produced.

  The present invention also provides an organic semiconductor element having a transistor-side substrate comprising the substrate for an organic semiconductor element according to the present invention, a substrate, and an organic transistor formed on the substrate, wherein the organic transistor protection Provided is an organic semiconductor element characterized in that the organic semiconductor element substrate and the transistor-side substrate are arranged to face each other so that the organic transistor is accommodated in an opening of a partition wall for a semiconductor.

  According to the present invention, the organic transistor element substrate and the transistor-side substrate are disposed to face each other so that the organic transistor is accommodated in the opening of the organic transistor protection partition wall. Can be prevented from aging due to contact with other compounds. For this reason, according to this invention, the organic-semiconductor element excellent in the temporal stability of performance can be obtained.

  In order to solve the above problems, the present invention provides a substrate, a plurality of organic transistors formed on the substrate, and a frame-like shape formed on the substrate so as to surround the organic transistor and having an opening. There is provided a substrate with an organic transistor, characterized by having a partition wall for protecting an organic transistor.

According to the present invention, since the organic transistor is surrounded by the organic transistor protective partition wall, when the organic semiconductor element is manufactured using the substrate with an organic transistor of the present invention, the organic transistor partition wall The opening is blocked by the opposing substrate. For this reason, in the organic-semiconductor element manufactured using the board | substrate with an organic transistor of this invention, it can prevent that the said organic transistor deteriorates with time by contact with another compound.
Therefore, according to the substrate with an organic transistor of the present invention, an organic semiconductor element having excellent performance over time can be produced.

  The present invention also provides an organic semiconductor element having a substrate with an organic transistor according to the present invention, and a counter substrate having the substrate and a transparent electrode formed on the substrate, wherein the organic transistor is formed by the counter substrate. Provided is an organic semiconductor element characterized in that the substrate with an organic transistor and a counter substrate are arranged to face each other so that an opening of a protective partition wall is closed.

  According to the present invention, the organic transistor includes the organic transistor protection substrate and the opposing substrate so that the opening of the partition for protecting the organic transistor is closed by the opposing substrate. It is possible to prevent deterioration with time due to contact with other compounds. For this reason, according to this invention, the organic-semiconductor element excellent in the temporal stability of performance can be obtained.

  In the organic semiconductor element according to the present invention, it is preferable that the inside of the organic transistor protecting partition wall is decompressed. This is because when the inside of the organic transistor protecting partition wall is decompressed, the organic transistor can be prevented from being deteriorated with time due to exposure to oxygen or moisture in the air.

  The substrate for an organic semiconductor element and the substrate with an organic transistor of the present invention are organic semiconductor elements in which an organic transistor is used, and have an effect that an organic semiconductor element having excellent performance stability over time can be produced.

The present invention relates to a substrate for an organic semiconductor element, a substrate with an organic transistor, and an organic semiconductor element.
Hereinafter, the substrate for an organic semiconductor element, the substrate with an organic transistor, and the organic semiconductor element of the present invention will be described in order.

A. First, the organic semiconductor element substrate of the present invention will be described. The substrate for an organic semiconductor element of the present invention has a substrate, a transparent electrode formed on the substrate, and a frame-shaped organic transistor protection partition wall formed on the transparent electrode and having an opening. It is a feature.

Such an organic semiconductor element substrate of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view showing an example of a substrate for an organic semiconductor element of the present invention. Here, FIG. 1A is a schematic view showing an example of the substrate for an organic semiconductor element of the present invention, and FIG. 1B is a cross-sectional view taken along line XX ′ in FIG. is there.
As illustrated in FIGS. 1A and 1B, an organic semiconductor element substrate 10 of the present invention is formed on a substrate 1, a transparent electrode 2 formed on the substrate 1, and a transparent electrode 2. And a frame-shaped organic transistor protecting partition wall 3 having an opening.

  According to the present invention, for example, when an organic semiconductor element is manufactured using the organic semiconductor element substrate of the present invention, the organic transistor is accommodated in the opening of the organic transistor protection partition wall. It can be prevented that the organic transistor deteriorates with time due to contact with other compounds. For this reason, according to the substrate for organic semiconductor elements of the present invention, an organic semiconductor element having excellent performance stability over time can be produced.

Here, the reason why an organic semiconductor element having excellent performance stability over time can be produced by using the organic semiconductor element substrate of the present invention will be described more specifically.
The substrate for an organic semiconductor element of the present invention is usually used for manufacturing an organic semiconductor element by disposing the substrate and a transistor side substrate having a plurality of organic transistors formed on the substrate. .

A representative method for producing an organic semiconductor element using the organic semiconductor element substrate of the present invention will be described with reference to the drawings. FIG. 2 is a schematic view showing an example of a method for producing an organic semiconductor element using the organic semiconductor element substrate of the present invention. As illustrated in FIG. 2, when an organic semiconductor element is manufactured using the organic semiconductor element substrate of the present invention, the organic semiconductor element substrate 10 of the present invention, the substrate 31, and the substrate 31 are formed. A transistor-side substrate 30 having a plurality of organic transistors 32 is used (FIG. 2A), so that the organic transistors 32 are accommodated in the openings of the organic transistor protection partition walls 3 of the organic semiconductor element substrate 10. A method of manufacturing the organic semiconductor element 40A is used by placing the organic semiconductor element substrate 10 and the substrate 30 with an organic transistor facing each other in a reduced pressure atmosphere and then returning to the atmospheric pressure atmosphere (FIG. 2B). )).
The organic semiconductor element 40A thus manufactured is in a state in which the organic transistor 32 is accommodated inside the opening of the organic transistor protecting partition 3. For this reason, in the organic semiconductor element 40A manufactured using the organic semiconductor element 10 of the present invention, it is possible to prevent the performance from being deteriorated over time due to another compound coming into contact with the organic transistor 32 or the like.
Therefore, for example, as illustrated in FIG. 3, a liquid crystal display element is formed using the organic semiconductor element 40 </ b> A by filling the liquid crystal material 41 between the organic semiconductor element substrate 10 and the transistor-side substrate 30. Even in the case where the liquid crystal material 41 is in contact with the organic transistor 32, the performance of the organic transistor can be prevented from being deteriorated over time.
Thus, according to the organic semiconductor element substrate of the present invention, an organic semiconductor element having excellent performance stability over time can be produced.

The substrate for an organic semiconductor element of the present invention has at least a substrate, a transparent electrode, and a partition wall for protecting an organic transistor, and may have other configurations as necessary.
Hereinafter, each structure used for the organic semiconductor element substrate of the present invention will be described in order.

1. First, the organic transistor protecting partition used in the present invention will be described. The organic transistor protecting partition used in the present invention is formed on a transparent electrode to be described later, and has a frame shape having an opening. The organic transistor protecting partition used in the present invention has a protective function for preventing the organic transistor from aging in an organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention. is there. Furthermore, the organic transistor protecting partition used in the present invention is disposed so as to face the organic semiconductor element substrate of the present invention in an organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention. It has a function of controlling the distance from the substrate.
Hereinafter, the organic transistor protecting partition wall will be described in detail.

  In the organic semiconductor element substrate of the present invention, the organic transistor protecting partition wall is formed on the transparent substrate described later on the transparent electrode described later, using the organic semiconductor element substrate of the present invention. When the organic semiconductor element is manufactured, the organic transistor is not particularly limited as long as the organic transistor is located within the opening of the organic transistor protection partition wall.

  In addition, when manufacturing an organic semiconductor element using the organic semiconductor element substrate of the present invention, the number of organic transistors housed inside the opening of each organic transistor protection partition wall is one. It may be good or plural.

  Further, in the organic semiconductor element substrate of the present invention, the number of organic transistor protection partition walls formed per unit area is the same as that of the organic semiconductor element substrate of the present invention. There is no particular limitation as long as the transistor can be protected and the distance from the opposing substrate can be within a desired range in accordance with the type and size of the organic semiconductor element.

  In the present invention, usually, a plurality of organic transistor protecting partition walls are arranged at equal intervals.

In addition, the height of the organic transistor protecting partition used in the present invention is the same as that of the organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention. It corresponds to the interval. For this reason, the height of the partition for protecting the organic transistor is not particularly limited as long as the height is preferable as the interval.
For example, when the organic semiconductor element substrate of the present invention is used for producing a liquid crystal display device using a ferroelectric liquid crystal, the height is preferably in the range of 0.5 μm to 2.5 μm, particularly It is preferably in the range of 1 μm to 2 μm. In addition, when used for manufacturing a liquid crystal display device using other liquid crystals instead of ferroelectric liquid crystals, the height is preferably in the range of 2 μm to 10 μm, and more preferably in the range of 5 μm to 7 μm. It is preferable to be within. Furthermore, when the substrate for an organic semiconductor element of the present invention is used for producing electronic paper, the height is preferably within a range of 10 μm to 300 μm, and particularly preferably within a range of 30 μm to 100 μm. .

  The shape of the partition for protecting the organic transistor used in the present invention is an opening that can accommodate the organic transistor inside the organic semiconductor element when the organic semiconductor element substrate of the present invention is used. There is no particular limitation as long as it has a frame shape having a shape. Such a shape may be a polygon such as a quadrangle, or may be a circle.

  In the present invention, a plurality of types of organic transistor protecting partition walls having different shapes may be used.

  Furthermore, the aspect in which the partition part for protecting an organic transistor used in the present invention is formed is not particularly limited as long as the aspect is formed so as to have a frame-like portion having the opening. . Therefore, as an aspect in which the organic transistor protecting partition wall portion is formed, for example, as illustrated in FIG. 1A, a frame-shaped one may be formed individually, or For example, as illustrated in FIGS. 4 (1) to (3), a plurality of organic transistor protecting partition walls may be integrally formed.

  Here, as a specific example of the aspect in which the organic transistor protection partition wall portion used in the present invention is integrally formed with a plurality of organic transistor protection partition wall portions, ribs or the like that regulate the alignment state of the liquid crystal material The aspect currently formed as a part of other member can be mentioned.

  The area inside the opening of the partition for protecting the organic transistor used in the present invention is that the organic transistor is stored inside the opening when the organic semiconductor element is manufactured using the substrate for the organic semiconductor element of the present invention. It is not particularly limited as long as it is within the range, and may be determined as appropriate according to the size of the organic transistor.

Such an organic transistor protecting partition used in the present invention can be formed by a known method such as a 2P (Photo Polymerization) method or a photolithography method. In the 2P method, for example, ethylene glycol (meth) acrylate, diethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, dipropylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) ) Acrylate, hexane glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, glycerin di (meth) acrylate, glycerin tridi (meth) acrylate, trimethylolpropane di (meth) acrylate, 1,4-butanediol di Acrylate, pentaerythritol (meth) acrylate, dipentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate , Monomers such as dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, urethane acrylate, epoxy acrylate, polyester acrylate, epoxy, vinyl ether, polyene / thiol-based oligomers, polyvinyl cinnamon that causes photodimerization reaction A photocrosslinkable polymer such as an acid-based resin is applied on a substrate, cured by irradiating with ultraviolet rays in a state where the original plate for forming an organic transistor protection partition wall is pressed against the coating film, and then the original plate is peeled off. As a result, an organic transistor protection partition wall can be formed.
In the photolithography method, a material as exemplified in the above-described 2P method is applied onto a base material, and the coating film is exposed through a desired photomask for forming an organic transistor protection partition wall, and then developed. As a result, an organic transistor protection partition wall can be formed.
In addition, said (meth) acrylate shall mean an acrylate or a methacrylate.

2. Transparent electrode Next, the transparent electrode used for this invention is demonstrated. The transparent electrode used for this invention is formed on the board | substrate mentioned later. Moreover, the transparent electrode used for this invention functions as an electrode which controls the light emission intensity of each pixel, when using the organic-semiconductor element manufactured using the board | substrate for organic-semiconductor elements of this invention for a display apparatus. .

  The material constituting the transparent electrode used in the present invention is not particularly limited as long as it has desired transparency and conductivity, and is manufactured using the organic semiconductor element substrate of the present invention. It can be appropriately selected and used according to the use of the organic semiconductor element. In particular, in the present invention, a transparent electrode made of indium oxide, tin oxide, or indium tin oxide (ITO) is preferably used.

3. Substrate Next, the substrate used in the present invention will be described. The substrate used in the present invention supports the transparent electrode and the partition for protecting the organic transistor.
Hereinafter, such a substrate will be described in detail.

The organic semiconductor element substrate of the present invention is not particularly limited as long as it has desired transparency. Among them, the substrate used in the present invention preferably has a transmittance in the visible light region of 80% or more, and more preferably 90% or more. When the transmittance is in the above range, it is possible to prevent a decrease in display luminance when an organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention is used in a display device. It is.
Here, the transmittance | permeability of a board | substrate can be measured by JISK7361-1 (the test method of the total light transmittance of a plastic transparent material).

  The substrate used in the present invention may be a rigid substrate having no flexibility such as a glass substrate, or may be a flexible substrate having flexibility such as a resin film substrate. In particular, in the present invention, it is preferable to use a flexible substrate. This is because by using the flexible substrate, the organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention can be used for manufacturing a flexible display device. In addition, the use of a flexible substrate also has an advantage that the organic semiconductor element substrate of the present invention can be manufactured by a Roll to Roll process.

  Examples of the resin film substrate include thermoplastic films such as polyethylene terephthalate (PET), polycarbonate (PC), and polyethersulfone (PES), crosslinkable resins such as epoxy resins, organic-inorganic composite materials, Polyimide (PI), polyamide, aromatic polyamide, polyethylene (PE), polypropylene (PP), polyester, polyolefin, polyacrylonitrile, ethylene vinyl acetate copolymer (EVA), cellulose triacetate (TAC), polyethylene naphthalate, The film which consists of polyphenylene sulfide (PPS), polyether ether ketone (PEEK), etc. can be mentioned.

  The structure of the substrate used in the present invention may be a structure composed of a single layer or a structure in which a plurality of layers are laminated. Further, in the case of having a configuration in which a plurality of layers are laminated, a configuration in which layers having the same composition are laminated may be used, or a configuration in which a plurality of layers having different compositions may be laminated. Good.

In addition, the thickness of the substrate used in the present invention is usually preferably in the range of 0.01 mm to 3 mm, more preferably in the range of 0.25 mm to 2 mm, particularly 0.1 mm to 1 mm. It is preferable to be within the range.
In addition, when the board | substrate used for this invention has the structure by which the several layer was laminated | stacked, the said thickness shall point out the thickness as the whole board | substrate which totaled the thickness of each layer.

In addition, the substrate used in the present invention preferably has a surface roughness (RSM value) of 10 nm or less, more preferably 3 nm or less, and particularly preferably 1 nm or less.
Here, the surface roughness can be measured with an atomic force microscope (AFM) or a laser interference type profilometer.

4). Other Configurations The organic semiconductor element substrate of the present invention may have other configurations in addition to the organic transistor protecting partition wall, the transparent electrode, and the substrate. Such other configuration is not particularly limited, and a configuration having an arbitrary function can be used according to the use of the organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention.
Among these, other configurations suitably used in the present invention include a color filter layer formed between the substrate and the transparent electrode, having a plurality of colored layers, formed on the transparent electrode, and a liquid crystal material. And an alignment layer having an alignment regulating force, and a spacer portion formed on the transparent electrode.
Hereinafter, the color filter layer, the alignment layer, and the spacer portion will be described in order.

(1) Color filter layer First, the color filter layer will be described. The color filter layer used in the present invention is formed between the substrate and the transparent electrode and has a plurality of colored layers. By having such a color filter layer, an organic semiconductor element suitably used for a color filter type liquid crystal display device can be produced using the organic semiconductor element substrate of the present invention.

An embodiment in which the color filter layer is formed on the organic semiconductor element substrate of the present invention will be described with reference to the drawings. FIG. 5 is a schematic view showing an example in which the color filter layer is formed on the organic semiconductor element substrate of the present invention. As illustrated in FIG. 5, the organic semiconductor element substrate 10 ′ of the present invention includes a plurality of colored layers 4 a (4 a ′, 4 a ″, 4 a ′ ″) between the substrate 1 and the transparent electrode 2. The color filter layer 4 to be formed may be formed.
As illustrated in FIG. 5, when the color filter layer 4 is formed on the organic semiconductor element substrate 10 ′ of the present invention, the organic transistor protecting partition wall portion 3 is usually provided with the colored layers 4 a ′ and 4 a ′. It is formed on the boundary of “4a”.
Further, as illustrated in FIG. 5, the color filter layer 4 used in the present invention may have an overcoat layer 4b formed so as to cover the colored layer 4a.

  Hereinafter, such a color filter layer will be described in detail.

a. Colored layer As the colored layer of the color filter layer used in the present invention, any color can be produced as long as it can develop a desired color according to the use of the organic semiconductor element produced using the organic semiconductor element substrate of the present invention. It is not limited. As such a colored layer, a colored layer of each color generally used for a color filter for a liquid crystal display device can be used. In particular, in the present invention, a plurality of colored layers composed of three colors of R, G, and B are usually used.

  Further, the colored layer used in the present invention is usually formed in a pattern so that a plurality of colors are regularly arranged. The pattern employ | adopted for this invention is not specifically limited, According to the use etc. of the organic-semiconductor element manufactured using the board | substrate for organic-semiconductor elements of this invention, it can select suitably. Examples of such a pattern include a stripe type, a mosaic type, a triangle type, and a 4-pixel arrangement type. At this time, the area and thickness of each colored layer are appropriately adjusted according to the resolution of the organic semiconductor element produced using the organic semiconductor element substrate of the present invention.

  In addition, as a structural component of the said colored layer, if a desired color development property can be provided to each colored layer, it will not specifically limit. Since the material constituting such a colored layer is the same as that used for the colored layer of a general color filter, detailed description thereof is omitted here.

b. Color filter layer The color filter layer used in the present invention has at least the above-described colored layer, but may have a configuration other than the above colored layer as necessary. Such other configurations are not particularly limited, and those having an arbitrary function can be used according to the use of the organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention. Especially in this invention, it is preferable to have the light-shielding part formed in the boundary of the colored layer mentioned above as such another structure. This is because, by having such a light-shielding portion, in the organic semiconductor element manufactured using the substrate for organic semiconductor elements of the present invention, it is possible to prevent malfunctions from occurring when the organic transistor is irradiated with light.

  A case where the color filter layer used in the present invention has such a light shielding portion will be described with reference to the drawings. FIG. 6 is a schematic view showing an example of the case where the color filter layer used in the present invention has the light shielding portion. As illustrated in FIG. 6, the color filter layer 4 ′ used in the present invention preferably has a light shielding portion 4c formed at the boundary between the colored layers 4a ′, 4a ″ and 4a ′ ″. .

  The light shielding portion used in the present invention is not particularly limited as long as it is made of a material having a desired light shielding property, and a material used for a light shielding portion of a color filter for a general liquid crystal display device is used. be able to. Examples of such a material include a material made of a light shielding material and a resin, or a metal material such as chromium.

  The color filter layer used in the present invention may be one in which an overcoat layer is formed so as to cover the colored layer. Here, since the overcoat layer used in the present invention is the same as that used in a color filter used in a general liquid crystal display device or the like, detailed description thereof is omitted here.

(2) Orientation layer Next, the orientation layer used for this invention is demonstrated. The alignment layer used in the present invention is formed on the transparent electrode and has an alignment regulating force for the liquid crystal material. By forming such an alignment layer, the organic semiconductor element manufactured using the organic semiconductor element substrate of the present invention can be suitably used for a liquid crystal display device.

  The case where the substrate for organic semiconductor elements of the present invention has the alignment layer will be described with reference to the drawings. FIG. 7 is a schematic view showing an example when the substrate for an organic semiconductor element of the present invention has the alignment layer. As illustrated in FIG. 7, the organic semiconductor element substrate 10 ″ of the present invention has the organic transistor protecting partition wall 3 and the alignment layer 5 having an alignment regulating force for the liquid crystal material on the transparent electrode 2. It may be.

  Hereinafter, such an alignment layer will be described in detail.

  As an aspect in which the alignment layer is formed in the organic semiconductor element substrate of the present invention, when the organic semiconductor element is produced on the transparent electrode and using the organic semiconductor element substrate of the present invention, There is no particular limitation as long as the liquid crystal material can be aligned by the alignment regulating force of the alignment layer. As such an embodiment, for example, as shown in FIG. 7, it may be formed on the transparent electrode 2 and the organic transistor protecting partition wall 3, or in FIG. 8. As shown, it may be formed on the transparent electrode 2 and between the organic transistor protecting partition walls 3.

The alignment layer used in the present invention is not particularly limited as long as it has an alignment regulating force for the liquid crystal material. Such alignment layers include a rubbing film obtained by subjecting a polymer material such as polyimide to a rubbing treatment, or a photo-alignment treatment obtained by subjecting a photo-alignment material containing a photoisomerizable compound or a photoreactive compound to a photo-alignment treatment. A film etc. can be mentioned. In particular, the alignment layer used in the present invention is preferably one in which a photo-alignment film is used as the alignment treatment film. This is because the photo-alignment film is useful in that the alignment process can be performed in a non-contact manner, so that no static electricity or dust is generated and the alignment process can be controlled quantitatively.
In addition, about the said rubbing film | membrane and said photo-alignment film used for this invention, since a well-known thing can be used as a rubbing film | membrane and photo-alignment film | membrane generally used for a liquid crystal display device, detailed description here Omitted.

  In addition, the alignment layer used in the present invention may have a configuration in which a reactive liquid crystal layer formed by fixing reactive liquid crystals on the rubbing film or the photo alignment film is formed. When the alignment layer used in the present invention has a configuration in which such a reactive liquid crystal layer is formed, for example, an organic semiconductor element manufactured using the substrate for an organic semiconductor element of the present invention, This is because the alignment stability of the ferroelectric liquid crystal can be improved when used in a liquid crystal display device using a ferroelectric liquid crystal.

  Examples of the reactive liquid crystal layer used in the present invention include those obtained by polymerizing a polymerizable liquid crystal monomer such as a monoacrylate monomer and a diacrylate monomer.

(3) Spacer part Next, the spacer part used for this invention is demonstrated. The spacer part used in the present invention is formed on the transparent electrode. Moreover, the spacer part used for this invention is arrange | positioned facing the said organic-semiconductor-element board | substrate and the said organic-semiconductor-element board | substrate in the organic-semiconductor element manufactured using the organic-semiconductor-element board | substrate of this invention. It has a function of maintaining a uniform distance from the substrate.

The case where the said spacer part is formed in the board | substrate for organic-semiconductor elements of this invention is demonstrated, referring a figure. FIG. 9 is a schematic view showing an example in which the spacer portion is formed on the organic semiconductor element substrate of the present invention. Here, FIG. 9A is a schematic view showing an example of the case where the spacer portion is formed on the organic semiconductor element substrate of the present invention, and FIG. 9B is the above-mentioned FIG. 9A. It is YY 'arrow sectional drawing.
As illustrated in FIG. 9A, the organic semiconductor element substrate 10 ′ ″ of the present invention may have a spacer portion 6 formed on the transparent electrode 2.
Further, as illustrated in FIG. 9B, when the spacer portion 6 is formed on the organic semiconductor element substrate 10 ′ ″ of the present invention, the spacer portion 6 is usually an organic transistor protection partition wall portion. 3 and the same height.

  The spacer portion used in the present invention is not particularly limited as long as it has the above-described function, and a spacer generally used for adjusting a cell gap in a liquid crystal display device can be used. Examples of such a spacer portion include a wall spacer, a columnar spacer, and a bead-containing spacer containing beads and a resin material. In the present invention, any spacer portion composed of any of these spacers can be suitably used, but among them, a spacer portion composed of a wall spacer or a columnar spacer is preferably used. Since it is difficult to control the position where the bead spacer is arranged, for example, when an organic semiconductor element is produced using the organic semiconductor element substrate of the present invention, the spacer is provided in a pixel region that contributes to image display. As a result, the display quality of the organic semiconductor element may be impaired. However, this is because the wall-shaped spacer and the columnar spacer are less likely to have such a problem because the positions where they are formed can be controlled.

  The method for forming the spacer portion composed of the wall spacer and the columnar spacer is not particularly limited as long as it can form a spacer portion having a predetermined shape. As such a method, for example, a method similar to the method for forming the organic transistor protective partition wall described in the above section “1. Organic transistor protective partition wall” can be used.

  In addition, the spacer part used for this invention may be formed integrally with the said partition part for organic transistor protection. Moreover, the spacer part used for this invention is normally formed in the same height as the said organic transistor protective partition part.

4). Next, the manufacturing method of the substrate for organic semiconductor elements of the present invention will be described. The method for producing an organic semiconductor element substrate of the present invention is not particularly limited as long as it is a method capable of producing an organic semiconductor element substrate having the above-described configuration. As such a manufacturing method, for example, using the substrate, a transparent electrode forming step of forming a transparent electrode on the substrate, and an organic transistor protection partition wall forming the organic transistor protection partition wall portion on the transparent electrode The method which consists of a part formation process can be illustrated.

  The method for forming the transparent electrode on the substrate in the transparent electrode forming step is not particularly limited as long as the transparent electrode made of a desired material can be formed with a uniform film thickness. As such a method, for example, a known method can be used as a method used for forming a transparent electrode generally used in a liquid crystal display device, such as a CVD method, a sputtering method, an ion plating method, or the like. .

  Further, in the organic transistor protection partition wall forming step, as a method of forming the organic transistor protection partition wall on the transparent electrode, a method capable of forming an organic transistor protection partition wall having a desired shape at a predetermined position. If it is, it will not specifically limit. As such a method, for example, a method generally used for forming a wall-like or columnar spacer when manufacturing a liquid crystal display device such as a lithography method or a transfer method can be used.

  The organic transistor protecting partition wall forming step may simultaneously form the organic transistor protecting partition wall and a spacer portion made of the same material as the organic transistor protecting partition wall.

B. Next, the substrate with an organic transistor of the present invention will be described. The substrate with an organic transistor of the present invention includes a substrate, a plurality of organic transistors formed on the substrate, and a frame-shaped organic transistor protection having an opening formed on the substrate so as to surround the organic transistor. And a partition wall portion.

Such a substrate with an organic transistor of the present invention will be described with reference to the drawings. FIG. 10 is a schematic view showing an example of the substrate with an organic transistor of the present invention. Here, FIG. 10A is a schematic view showing an example of the substrate with an organic transistor of the present invention, and FIG. 10B is a cross-sectional view taken along line xx ′ in FIG. .
As illustrated in FIGS. 10A and 10B, the substrate 20 with an organic transistor of the present invention includes a substrate 21, a plurality of organic transistors 22 formed on the substrate 21, and the substrate 21. The organic transistor 22 includes a frame-shaped organic transistor protection partition wall 23 formed so as to surround the organic transistor 22 and having an opening.

According to the present invention, since the organic transistor is surrounded by the organic transistor protective partition wall, when the organic semiconductor element is manufactured using the substrate with an organic transistor of the present invention, the organic transistor partition wall The opening is closed by a substrate disposed opposite to the substrate with an organic transistor of the present invention. For this reason, in the organic semiconductor element manufactured using the board | substrate with an organic transistor of this invention, it can prevent that the said organic transistor deteriorates with time by contacting with another compound.
Therefore, according to the substrate with an organic transistor of the present invention, an organic semiconductor element having excellent performance over time can be produced.

The reason why an organic semiconductor element having excellent performance stability over time can be produced by using the substrate with an organic transistor of the present invention will be described more specifically.
The substrate with an organic transistor of the present invention is usually used for producing an organic semiconductor element by disposing a substrate and a counter substrate having a transparent electrode formed on the substrate.

A typical method for producing an organic semiconductor element using the substrate with an organic transistor of the present invention will be described with reference to the drawings. FIG. 11 is a schematic view showing an example of a method for producing an organic semiconductor element using the substrate with an organic transistor of the present invention. As illustrated in FIG. 11, when an organic semiconductor element is formed using the substrate with an organic transistor of the present invention, the substrate with an organic transistor 20 of the present invention, the substrate 51, and the transparent formed on the substrate 51. The counter substrate 50 having the electrode 52 is used (FIG. 11A), and the opening of the organic transistor protection partition wall 23 included in the organic transistor-attached substrate 20 is closed by the transparent substrate 50. A method of manufacturing the organic semiconductor element 40B by placing the organic transistor-equipped substrate 20 and the transparent substrate 50 facing each other in a reduced pressure atmosphere and then returning to the atmospheric pressure atmosphere is used (FIG. 11B).
The organic semiconductor element 40B thus manufactured is in a state where the organic transistor 22 is sealed inside the opening of the organic transistor protecting partition wall 23. For this reason, the organic semiconductor element 40B manufactured using the board | substrate 20 with an organic transistor of this invention can prevent that a performance deteriorates with time, when another compound contacts the organic transistor 22, etc.
For this reason, according to the substrate with an organic transistor of the present invention, it is possible to manufacture an organic semiconductor element having excellent performance stability over time.

The board | substrate with an organic transistor of this invention has a board | substrate, an organic transistor, and the partition part for organic transistor protection at least, and may have another structure as needed.
Hereafter, each structure used for the board | substrate with an organic transistor of this invention is demonstrated in detail.

1. First, the organic transistor protecting partition used in the present invention will be described. The partition part for protecting an organic transistor used in the present invention is formed on a substrate described later so as to surround the organic transistor, and has a frame shape having an opening. Moreover, the partition part for organic transistor protection used for this invention has a protection function which prevents that an organic transistor deteriorates with time in the organic-semiconductor element manufactured using the board | substrate with an organic transistor of this invention. Furthermore, the organic transistor protecting partition used in the present invention is an organic semiconductor element manufactured using the substrate with an organic transistor of the present invention, and a substrate disposed so as to face the substrate with an organic transistor of the present invention. Hereinafter, such an organic transistor protection partition wall portion will be described in detail.

  In the substrate with an organic transistor of the present invention, the aspect in which the organic transistor protective partition is formed is not particularly limited as long as it is formed so as to surround the organic transistor described later. As such a form of formation, an organic transistor protection partition wall may be formed individually for each organic transistor to be described later, or a plurality of organic transistor protection partition walls may be integrated. The aspect currently formed may be sufficient.

  As a specific example of the aspect in which the organic transistor protection partition wall portion used in the present invention is formed integrally with a plurality of organic transistor protection partition wall portions, there are other ribs or the like that regulate the alignment state of the liquid crystal material. The aspect currently formed as a part of member can be mentioned.

  In the substrate with an organic transistor of the present invention, it is preferable that all of the organic transistors described later are surrounded by an organic transistor protection partition wall. Therefore, the number of partition walls for protecting the organic transistor used in the present invention may be appropriately determined according to the number of organic transistors in the present invention.

  The height of the organic transistor protecting partition used in the present invention is not particularly limited as long as it is higher than the height of the organic transistor described later. Further, the height of the partition for protecting the organic transistor corresponds to the distance between the substrate for organic semiconductor element and the substrate facing the organic semiconductor element manufactured using the substrate with organic transistor of the present invention. Become. For this reason, the height of the organic transistor protecting partition wall may be set to a preferable height as the interval in a range higher than the height of the organic transistor described later. For example, when the substrate with an organic transistor of the present invention is used for producing a liquid crystal display device using a ferroelectric liquid crystal, the height is preferably in the range of 0.5 μm to 2.5 μm, particularly It is preferably in the range of 1 μm to 2 μm. In addition, when used for manufacturing a liquid crystal display device using other liquid crystals instead of ferroelectric liquid crystals, the height is preferably in the range of 2 μm to 10 μm, and more preferably in the range of 5 μm to 7 μm. It is preferable to be within. Furthermore, when using the board | substrate with an organic transistor of this invention in order to produce electronic paper, it is preferable that the said height exists in the range of 10 micrometers-300 micrometers, and it is especially preferable that it exists in the range of 30 micrometers-100 micrometers.

  In addition, the shape of the partition for protecting the organic transistor used in the present invention is such that when the organic semiconductor element is produced using the organic semiconductor element substrate of the present invention, the organic transistor can be accommodated inside the organic semiconductor element. It is not particularly limited as long as it has a frame shape having an opening. Such a shape is the same as that described in the above section “A. Substrate for Organic Semiconductor Element”, and thus the description thereof is omitted here.

  The area inside the opening of the partition part for protecting an organic transistor used in the present invention is not particularly limited as long as it can accommodate an organic transistor described later in the opening.

  The method for forming the organic transistor protective substrate used in the present invention is the same as the method described in the section “A. Substrate for organic semiconductor element”, and the description thereof is omitted here.

2. Next, the organic transistor used in the present invention will be described. The organic transistor used in the present invention uses an organic semiconductor material.

  The organic transistor used in the present invention will be specifically described with reference to the drawings. FIG. 12 is a schematic view showing an example of an organic transistor used in the present invention. As illustrated in FIG. 12, the organic transistor 22 used in the present invention is generally formed of a gate electrode 22A, a gate insulating film 22B formed on the gate electrode 22A, and the gate insulating film 22B. It has an organic semiconductor layer 22C made of a semiconductor material, and a source electrode 22D and a drain electrode 22E formed on the organic semiconductor layer 22C so as to face each other at a constant interval.

In FIG. 12, an example of an organic transistor having a bottom gate / top contact structure has been described as the organic transistor used in the present invention. However, the organic transistor used in the present invention has such a structure. It is not limited to. Therefore, the organic transistor used in the present invention may have a bottom gate / bottom contact structure, a top gate / top contact structure, or a top gate / bottom contact structure. Among them, in the present invention, the bottom gate / top contact structure and the bottom gate / bottom contact structure are particularly preferable.
Hereinafter, such an organic transistor will be described.

(1) Organic Semiconductor Layer First, the organic semiconductor layer used in the present invention will be described. The organic semiconductor layer used in the present invention is made of an organic semiconductor material.

  The organic semiconductor material is not particularly limited as long as it is a material capable of forming an organic semiconductor layer having desired semiconductor characteristics, depending on the use of an organic semiconductor element manufactured using the substrate with an organic transistor of the present invention. It is not a thing. Examples of such organic semiconductor materials include π-electron conjugated aromatic compounds, chain compounds, organic pigments, and organosilicon compounds. More specifically, low molecular organic semiconductor materials such as pentacene, and polypyrroles such as polypyrrole, poly (N-substituted pyrrole), poly (3-substituted pyrrole), and poly (3,4-disubstituted pyrrole). , Polythiophene, poly (3-substituted thiophene), poly (3,4-disubstituted thiophene), polythiophenes such as polybenzothiophene, polyisothianaphthenes such as polyisothianaphthene, and polychess such as polychenylene vinylene Nylene vinylenes, poly (p-phenylene vinylenes) such as poly (p-phenylene vinylene), polyanilines such as polyaniline and poly (N-substituted aniline), polyacetylenes such as polyacetylene, polyazulenes such as polydiacetylene and polyazulene High molecular organic semiconductor materials such as Of these, pentacene or polythiophenes can be preferably used in the present invention.

  In addition, the thickness of the organic semiconductor layer used in the present invention is not particularly limited as long as the organic semiconductor layer having desired semiconductor characteristics can be developed according to the kind of the organic semiconductor material. In particular, in the present invention, the thickness is preferably 1000 nm or less, particularly preferably in the range of 5 nm to 300 nm, and more preferably in the range of 20 nm to 100 nm.

(2) Gate Insulating Layer Next, the gate insulating layer used in the present invention will be described. The gate insulating layer used in the present invention is made of an insulating material.

  The insulating material is not particularly limited as long as a desired insulating property can be imparted to the gate insulating layer. Therefore, the insulating material used in the present invention may be an inorganic material or an organic material.

Examples of such insulating materials include silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, polyethylene, polyester, polyimide, polyphenylene sulfide, polyparaxylene, polyacrylonitrile, and various insulating LB films. Oxides such as ₂ O ₅ , ZrO ₂ , La ₂ O ₃ , TiO ₂ , Y ₂ O ₃ , CeO ₂ , nitrides such as Si ₂ N ₃ , oxynitrides such as SiO _x N _y , fluorine such as CaF And organic materials such as a compound, diamond-like carbon (DLC), a thermosetting resin, a thermoplastic resin, a photo-curing resin by UV, and the like, and PVP, PVA, and the like.

  In the present invention, such an insulating material may be used alone, or two or more kinds may be used in combination.

  The thickness of the gate insulating layer used in the present invention is particularly limited as long as it is within a range in which a desired insulating property can be imparted to the gate insulating layer, depending on the type of insulating material constituting the gate insulating layer. is not. In particular, in the invention, it is preferably 100 μm or less, particularly preferably in the range of 0.1 μm to 10 μm, and more preferably in the range of 0.3 μm to 1 μm.

(3) Source and drain electrodes Next, the source and drain electrodes used in the present invention will be described. The source electrode and the drain electrode used in the present invention are formed so as to be in contact with the organic semiconductor layer.

  The source electrode and drain electrode used in the present invention are usually composed of a metal material. Such a metal material is not particularly limited as long as it has desired conductivity, and a metal material generally used for an electrode of a transistor can be used.

Examples of the metal material used in the present invention include metals such as Au, ITO, platinum, chromium, palladium, aluminum, indium, molybdenum, low-resistance polysilicon, low-resistance amorphous silicon, tin oxide, indium oxide, and the like. Metals such as indium tin oxide (ITO), Al, Cu, Cr, sodium, sodium-potassium alloy, magnesium, lithium, aluminum, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture , Aluminum / aluminum oxide (Al ₂ O ₃ ) mixture, indium, lithium / aluminum mixture, rare earth, and the like.

  In addition, the source electrode and drain electrode used for this invention are normally comprised from the same metal material.

(4) Gate electrode Next, the gate electrode used for this invention is demonstrated. The gate electrode used in the present invention is formed on the gate insulating layer.
Here, since the gate electrode used in the present invention is generally the same as that used in an organic transistor, a detailed description thereof is omitted here.

(5) Others The organic transistor used in the present invention may have other configurations in addition to the gate insulating layer, the organic semiconductor layer, the source electrode, the drain electrode, and the gate electrode. As such another structure, what has arbitrary functions according to the use etc. of the organic-semiconductor element manufactured using the board | substrate with an organic transistor of this invention can be used. Among them, as the above-described other configuration, a passivation layer formed so as to be positioned on the outermost surface of the organic transistor can be exemplified to prevent deterioration with time of the organic semiconductor layer. . As such a passivation layer, what consists of fluororesin, PVA, PVP, etc. can be used, for example.

3. Substrate Next, the substrate used in the present invention will be described. The substrate used in the present invention supports the organic transistor and the organic transistor protecting partition wall.
Here, the substrate used in the present invention is the same as that described in the above section “A. Substrate for Organic Semiconductor Element”, and therefore the description thereof is omitted here.

4). Other Configurations The substrate with an organic transistor of the present invention may have other configurations in addition to the organic transistor protecting partition wall, the organic transistor, and the substrate. Such other configuration is not particularly limited, and a configuration having an arbitrary function can be used according to the use of the organic semiconductor element manufactured using the substrate with an organic transistor of the present invention. Among these, the other configuration suitably used in the present invention includes an alignment layer having an alignment regulating force for the liquid crystal material, a spacer portion, and a pixel electrode formed so as to be connected to the drain electrode of the organic transistor. Can be mentioned.
Hereinafter, such an alignment layer, a spacer portion, and a pixel electrode will be described in order.

(1) Orientation layer First, the orientation layer used for this invention is demonstrated. The alignment layer used in the present invention has an alignment regulating force for the liquid crystal material. By forming such an alignment layer, the organic semiconductor element manufactured using the substrate with an organic transistor of the present invention can be suitably used for a liquid crystal display device.

  A case where the substrate with an organic transistor of the present invention has the alignment layer will be described with reference to the drawings. FIG. 13 is a schematic view showing an example in the case where the substrate with an organic transistor of the present invention has the alignment layer. As illustrated in FIG. 13, the organic transistor-attached substrate 20 ′ of the present invention includes an organic transistor protection partition wall 23 and an alignment layer 24 having an alignment regulating force with respect to the liquid crystal material on the organic transistor 22. It may be.

  In addition, as an aspect in which the alignment layer is formed in the substrate with an organic transistor of the present invention, a liquid crystal material is used when an organic semiconductor element manufactured using the substrate with an organic transistor of the present invention is used in a liquid crystal display device. There is no particular limitation as long as the orientation can be regulated. As such an embodiment, for example, as shown in FIG. 13, the organic transistor and the organic transistor protection partition wall may be formed on the organic transistor, or as shown in FIG. It may be formed on the substrate 21 and between the organic transistor protecting partition wall portions 23.

  Here, the alignment layer used in the present invention is the same as that described in the above section “A. Substrate for organic semiconductor element”, and thus the description thereof is omitted here.

(2) Spacer part Next, the spacer part used for this invention is demonstrated. The spacer part used for this invention is a board | substrate arrange | positioned so as to oppose the board | substrate with an organic transistor of this invention, and the board | substrate with an organic transistor in the organic-semiconductor element manufactured using the board | substrate with an organic transistor of this invention. It has the function to hold | maintain the space | interval uniformly.

The case where the spacer portion is formed on the substrate with an organic transistor of the present invention will be described with reference to the drawings. FIG. 15 is a schematic view showing an example in which a spacer portion is formed on the substrate with an organic transistor of the present invention. Here, FIG. 15A is a schematic diagram showing an example in which a spacer portion is formed on the substrate with an organic transistor of the present invention. FIG. 15B is a cross-sectional view taken along line yy ′ in FIG.
As illustrated in FIG. 15A, the organic transistor-attached substrate 20 ″ of the present invention may have a spacer portion 25 formed on the substrate 21.
Further, as illustrated in FIG. 22B, when the spacer portion 25 is formed on the organic transistor-attached substrate 20 ″ of the present invention, the spacer portion 25 is usually formed with the organic transistor protecting partition wall portion 23. They are formed at the same height.

  Here, the spacer portion used in the present invention is the same as that described in the above section “A. Organic Semiconductor Element Substrate”, and therefore, the description thereof is omitted here.

(3) Pixel Electrode Next, the pixel electrode used in the present invention will be described. The pixel electrode used in the present invention is formed so as to be connected to the drain electrode of each organic transistor included in the substrate with an organic transistor of the present invention.
By forming such a pixel electrode, the organic semiconductor element manufactured using the substrate with an organic transistor of the present invention can be suitably used for a display device.

  As the pixel electrode used in the present invention, those generally used as a pixel electrode for a liquid crystal display device can be used. In particular, in the present invention, a pixel electrode made of indium oxide, tin oxide, or indium tin oxide (ITO) is preferably used.

5. Next, a method for manufacturing a substrate with an organic transistor according to the present invention will be described. The method for producing a substrate with an organic transistor of the present invention is not particularly limited as long as it is a method capable of producing a substrate with an organic transistor having the above-described configuration. As such a manufacturing method, for example, an organic transistor forming step for forming an organic transistor on the substrate using the substrate, and an organic transistor for forming the organic transistor protection partition wall so as to surround the organic transistor A method comprising a protective partition wall forming step can be exemplified.

  In the organic transistor forming step, the method for forming the organic transistor is not particularly limited as long as it is a method capable of forming an organic transistor having a desired structure. As such a method, a generally known method can be used as a method for forming an organic transistor.

  Further, in the organic transistor protection partition wall forming step, the method for forming the organic transistor protection partition wall is not particularly limited as long as it can form the organic transistor protection partition wall so as to surround the organic transistor. It is not something. As such a method, a method similar to the method described in the above section “A. Organic Semiconductor Device Substrate” can be used, and thus the description thereof is omitted here.

C. Organic Semiconductor Element Next, the organic semiconductor element of the present invention will be described. The organic semiconductor element of the present invention includes an aspect (first aspect) in which the substrate for an organic semiconductor element according to the present invention is used, and an aspect (second aspect) in which the substrate with an organic transistor according to the present invention is used. Can be divided into Therefore, hereinafter, the organic semiconductor element of the present invention will be described separately for each embodiment.

C-1. First, the organic semiconductor element according to the first aspect of the present invention will be described. The organic semiconductor element of this embodiment is one in which the organic semiconductor element substrate according to the present invention is used. That is, the organic semiconductor element of this aspect is an organic semiconductor element having a transistor-side substrate having the substrate for an organic semiconductor element according to the present invention, and a substrate and an organic transistor formed on the substrate. The organic semiconductor element substrate and the transistor side substrate are arranged to face each other so that the organic transistor is accommodated in the opening of the organic transistor protection partition wall.

  Such an organic semiconductor element of this embodiment will be described with reference to the drawings. FIG. 16 is a schematic view showing an example of the organic semiconductor element of this embodiment. As illustrated in FIG. 16, the organic semiconductor element 40 </ b> A of this embodiment includes a substrate 10 for an organic semiconductor element according to the present invention, a substrate 31, and an organic transistor 32 formed on the substrate 31. The side substrate 30 is used, and the organic transistor 32 for the organic semiconductor element is arranged so that the organic transistor 32 included in the transistor side substrate 30 is accommodated in the opening of the partition 3 for protecting the organic transistor included in the substrate 10 for organic semiconductor element. The substrate 10 and the transistor side substrate 30 are arranged to face each other.

  According to this aspect, the organic transistor is placed in the opening of the organic transistor protection partition wall so that the organic semiconductor element substrate and the transistor side substrate are opposed to each other. It is possible to prevent deterioration with time due to contact with other compounds. For this reason, according to this aspect, an organic semiconductor element excellent in performance stability over time can be obtained.

The organic semiconductor element of this embodiment has at least a substrate for an organic semiconductor element and a transistor side substrate, and may have other configurations as necessary.
Hereinafter, each structure used for the organic semiconductor element of this aspect is demonstrated in order.

1. First, an organic semiconductor element substrate used in this embodiment will be described. The substrate for an organic semiconductor element used in this embodiment is the organic semiconductor element substrate of the present invention. Accordingly, the organic semiconductor element substrate used in this embodiment is the same as that described in the above section “A. Organic Semiconductor Element Substrate”, and the description thereof is omitted here.

2. Next, the transistor side substrate used in this embodiment will be described. The transistor side substrate used in this embodiment has a substrate and a plurality of organic transistors formed on the substrate.

  Here, the substrate and the organic transistor are the same as those described in the section “B. Substrate with Organic Transistor”, and thus the description thereof is omitted here.

Moreover, the transistor side substrate used in this embodiment may have a configuration other than the above substrate and the organic transistor. As such another structure, the structure which has a desired function can be used according to the use etc. of the organic-semiconductor element of this aspect. In particular, other configurations suitably used for the organic semiconductor element of the present embodiment include, for example, a pixel electrode formed so as to be connected to the drain electrode that constitutes the organic transistor, and an alignment regulating force for the liquid crystal material An alignment layer can be mentioned.
Note that the pixel electrode and the alignment layer are the same as those described in the section “B. Substrate with Organic Transistor”, and thus the description thereof is omitted here.

3. Organic Semiconductor Element The organic semiconductor element of this embodiment may have a configuration other than the organic semiconductor element substrate and the transistor side substrate. Such other configurations are not particularly limited, and those having an arbitrary function can be used depending on the use of the organic semiconductor element of this embodiment.

  In the organic semiconductor element of this aspect, it is preferable that the inside of the organic transistor protecting partition wall is decompressed. This is because when the inside of the organic transistor protecting partition wall is decompressed, the organic transistor can be prevented from being deteriorated with time due to exposure to oxygen or moisture in the air.

  In this embodiment, when the inside of the organic transistor protecting partition wall is depressurized, the degree of depressurization is preferably within a range of 0.00001 Torr to 100 Torr, and particularly within a range of 0.001 Torr to 50 Torr. Is more preferable, and it is preferable to be within the range of 0.05 Torr to 10 Torr. This is because, when the degree of decompression is within such a range, the organic semiconductor element of this embodiment can be made more excellent in stability over time of performance.

In addition, the atmospheric pressure in the organic transistor protecting partition wall is normally the atmospheric pressure when the organic semiconductor element substrate and the transistor side substrate are bonded together in the process of manufacturing the organic semiconductor element of this aspect. Therefore, in order to bring the atmospheric pressure in the organic transistor protection partition wall into the above range, in the step of manufacturing the organic semiconductor element of this embodiment, the organic semiconductor element substrate and the transistor side substrate are bonded together. The atmospheric pressure may be within the above range.
Conversely, in the step of manufacturing the organic semiconductor element of this embodiment, when the organic semiconductor element substrate and the transistor side substrate are bonded together under reduced pressure, the inside of the organic transistor protection partition wall is decompressed. It will be.

4). Use of Organic Semiconductor Element The organic semiconductor element of this embodiment can be used as a liquid crystal display element by, for example, filling a liquid crystal material between the organic semiconductor element substrate and the transistor side substrate.
In addition to the liquid crystal display element, the organic semiconductor element of this embodiment includes a microcapsule type electrophoretic display, a twist ball type electronic paper, an electronic powder fluid type electronic paper, an in-plane type electrophoretic display, a colored solution type electrophoretic display, It can be used for electrophoretic displays such as particle transfer electronic paper.

5. Manufacturing method of organic semiconductor element The organic semiconductor element of this aspect can be manufactured by bonding the substrate for an organic semiconductor element and the transistor-side substrate. Moreover, the organic semiconductor element by which the inside of the said organic-transistor protection partition part was pressure-reduced can be manufactured by bonding together the said board | substrate for organic-semiconductor elements, and the said transistor side board | substrate under pressure reduction. Here, as a method for bonding the organic semiconductor element substrate and the transistor side substrate, generally known methods can be used, and therefore detailed description thereof is omitted.

C-2. Next, the organic semiconductor element according to the second aspect of the present invention will be described. The organic semiconductor element of this embodiment uses the substrate with an organic transistor according to the present invention. That is, the organic semiconductor element of this embodiment is an organic semiconductor element having a substrate with an organic transistor according to the present invention, and a counter substrate having a substrate and a transparent electrode formed on the substrate. The substrate with an organic transistor and the counter substrate are arranged to face each other so that the opening of the partition for protecting the organic transistor is closed by the substrate.

  Such an organic semiconductor element of this embodiment will be described with reference to the drawings. FIG. 17 is a schematic view showing an example of the organic semiconductor element of this embodiment. As illustrated in FIG. 17, the organic semiconductor element 40 </ b> B of this aspect includes a counter substrate having the substrate 20 with an organic transistor according to the present invention, a substrate 51, and a transparent electrode 52 formed on the substrate 51. 50, and the counter substrate 50 is opposed to the organic transistor-coated substrate 20 so that the opening of the organic transistor protecting partition wall 23 of the organic transistor-coated substrate 20 is closed. The substrate 50 is disposed opposite to the substrate 50.

  According to the present invention, the organic transistor includes the organic transistor protection substrate and the opposing substrate so that the opening of the partition for protecting the organic transistor is closed by the opposing substrate. It is possible to prevent deterioration with time due to contact with other compounds. For this reason, according to this invention, the organic-semiconductor element excellent in the temporal stability of performance can be obtained.

The organic semiconductor element of this embodiment has at least the above-mentioned substrate with an organic transistor and a counter substrate, and may have other configurations as necessary.
Hereafter, each structure used for the liquid crystal display device of this aspect is demonstrated in order.

1. First, the substrate with an organic transistor used in this embodiment will be described. The substrate with an organic transistor used in this embodiment is the substrate with an organic transistor of the present invention. Therefore, the substrate with an organic transistor used in this embodiment is the same as that described in the section “B. Substrate with an organic transistor”, and the description thereof is omitted here.

2. Next, the counter substrate used in this embodiment will be described. The counter substrate used in this embodiment has a substrate and a transparent electrode formed on the substrate.
Here, the substrate and the transparent electrode used for the counter substrate are the same as those described in the section of “A. Substrate for organic semiconductor element”, and thus the description thereof is omitted here.

  The counter substrate used in this embodiment may have other configurations besides the substrate, the transparent electrode, and the transparent electrode. As such another structure, the structure which has a desired function can be used according to the use etc. of the organic-semiconductor element of this aspect. In particular, as another configuration suitably used for the counter substrate, a color filter layer formed between the substrate and the transparent electrode and including a plurality of colored layers can be exemplified. By forming such a color filter layer, the organic semiconductor element of this embodiment can be suitably used for a liquid crystal display element by a color filter method.

  The color filter layer used in this embodiment is the same as that described in the section “A. Substrate for organic semiconductor element”, and the description thereof is omitted here.

3. Organic Semiconductor Element The organic semiconductor element of this embodiment may have a configuration other than the substrate with an organic transistor and the counter substrate. Such other configurations are not particularly limited, and those having an arbitrary function can be used depending on the use of the organic semiconductor element of this embodiment.

  In the organic semiconductor element of this aspect, it is preferable that the inside of the organic transistor protecting partition wall is decompressed. This is because when the inside of the organic transistor protecting partition wall is decompressed, the organic transistor can be prevented from being deteriorated with time due to exposure to oxygen or moisture in the air.

  In this embodiment, when the inside of the organic transistor protecting partition wall is depressurized, the degree of depressurization is preferably in the range of 0.00001 Torr to 100 Torr, and particularly in the range of 0.001 Torr to 50 Torr. It is preferable that it is in the range of 0.05 Torr to 10 Torr. This is because, when the degree of decompression is within such a range, the organic semiconductor element of this embodiment can be made more excellent in stability over time of performance.

Note that the atmospheric pressure in the organic transistor protecting partition wall is normally the atmospheric pressure when the organic transistor-attached substrate and the counter substrate are bonded together in the step of manufacturing the organic semiconductor element of this aspect. Therefore, in order to bring the atmospheric pressure in the partition for protecting the organic transistor into the above range, in the step of manufacturing the organic semiconductor element of this aspect, the atmospheric pressure when the substrate with the organic transistor and the counter substrate are bonded together is set. It may be within the above range.
Conversely, in the process of manufacturing the organic semiconductor element of this embodiment, when the organic transistor-attached substrate and the counter substrate are bonded together under reduced pressure, the inside of the organic transistor protection partition wall is decompressed. .

4). Use of Organic Semiconductor Element The organic semiconductor element of this embodiment can be used as a liquid layer display element by filling a liquid crystal material between the substrate with an organic transistor and the counter substrate, for example. In addition to the liquid crystal display element, the organic semiconductor element of this embodiment includes a microcapsule type electrophoretic display, a twist ball type electronic paper, an electronic powder fluid type electronic paper, an in-plane type electrophoretic display, a colored solution type electrophoretic display, It can be used for electrophoretic displays such as particle transfer electronic paper.

5. Manufacturing method of organic-semiconductor element The organic-semiconductor element of this aspect can be manufactured by bonding together the said board | substrate with an organic transistor, and the said opposing board | substrate. Moreover, the organic-semiconductor element by which the inside of the said organic-transistor protection partition part was pressure-reduced can be manufactured by bonding together the said board | substrate with an organic transistor, and the said opposing board | substrate under pressure reduction. Here, since a generally known method can be used as a method for bonding the substrate with an organic transistor and the counter substrate, detailed description thereof is omitted here.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

  Hereinafter, the present invention will be described more specifically by showing examples.

1. Example (1) Production of a substrate with an organic transistor (step of forming a gate electrode)
First, a metal mask having a gate electrode-shaped opening was placed on the surface of a glass substrate having a size of 150 mm × 150 mm × 0.7 mm, and then a chromium film having a thickness of 10 nm was formed. Next, a 200 nm aluminum film was deposited to form a gate electrode. The degree of vacuum at the time of vapor deposition was 1 × 10 ⁴ Pa, and the vapor deposition rate was about 1 kg / sec.

(Gate insulation layer formation process)
Next, a photoresist (acrylic negative resist) was spin-coated on the substrate as a gate insulating layer. The spin coating at this time was held at 800 rpm for 10 seconds. Thereafter, the substrate was dried at 80 ° C. for 3 minutes and then subjected to pattern exposure at 350 mJ / cm ² . Next, a development step was performed to remove portions other than the gate electrode, and then the substrate was dried in an oven at 200 ° C. for 30 minutes.

(Alignment layer formation process)
A 2% by mass cyclopentanone solution of a photo-dimerization reaction type photo-alignment film material (trade name: ROP-102, manufactured by Roric Technology) is spin-coated on the substrate, dried at 130 ° C. for 10 minutes, and then subjected to linear ultraviolet radiation. The alignment treatment was performed by irradiating polarized light of about 100 mJ / cm ² .

(Source / drain electrode formation process)
Next, a metal mask having source / drain electrode-shaped openings was disposed on the surface of the substrate after forming the gate insulating layer, and then an Au film having a thickness of 50 nm was deposited to form source / drain electrodes. At this time, the degree of vacuum at the time of vapor deposition was 1 × 10 ⁴ Pa, and the vapor deposition rate was about 1 kg / sec. When the formed source electrode and drain electrode were observed with a reflection optical microscope, the distance between the source electrode and the drain electrode (channel length) was 50 μm.

(Organic transistor protection partition wall manufacturing process)
A transparent resist (trade name: NN780, manufactured by JSR) was spin-coated on the substrate on which the organic transistor was formed, dried under reduced pressure, and pre-baked at 90 ° C. for 3 minutes.
Subsequently, it exposed to a mask with 100 mJ / cm ² ultraviolet rays, developed with an inorganic alkali solution, and post-baked at 230 ° C. for 30 minutes.
Thus, an organic transistor protection partition wall portion having a height of 1.5 μm surrounding the organic TFT portion was formed.

(Organic semiconductor layer formation process)
An organic semiconductor layer made of a thiophene-based organic semiconductor having a thickness of 50 nm was deposited on the entire surface of the substrate on which the source electrode and the drain electrode were formed.
Through the above steps, a substrate with an organic transistor having an organic transistor was produced.

As a result of measuring the transistor characteristics of the organic transistor of the produced substrate with an organic transistor, it was found that it was driven as a transistor. At this time, the ON current of the organic transistor was 1 × 10 ⁻⁴ A, and the OFF current was 1 × 10 ⁻¹¹ A. The measurement conditions were that the gate voltage was applied in increments of -2V from 100V to -80V.
Next, the source-drain voltage was fixed at −80 V, and the current value flowing between the source and drain was measured. In any transistor evaluation, measurement was performed in the air in any case.

(2) Production of counter substrate A glass substrate on which an ITO electrode is formed as a common electrode is thoroughly washed, and a photodimerization reaction type photo-alignment film material (trade name: ROP-103, manufactured by Roric Technology) on this glass substrate A 2 mass% cyclopentanone solution was spin-coated, dried at 130 ° C. for 10 minutes, and then irradiated with about 100 mJ / cm ^{2 of} linear ultraviolet light for alignment treatment.

(3) Production of liquid crystal display element (organic semiconductor element) The relationship with the glass substrate on which the organic TFT has been formed by applying an ultraviolet curable sealing material to the peripheral edge of the counter substrate is parallel to the polarized ultraviolet irradiation direction and anti The sealing agent was photocured while applying pressure while facing both substrates so as to be in a parallel state.

  Next, an inlet for injecting liquid crystal into the cell gap of both glass substrates is provided at one end, and a liquid crystal material (R2301 manufactured by AZ Electronic Materials) is attached to the upper part of the inlet, and the inside of the vacuum chamber is 10 Torr. In a state where exhaust was performed, the cell gap was injected at a temperature 10 to 20 ° C. higher than the nematic phase-isotropic transition temperature. After the injection, the liquid crystal material was gradually cooled to room temperature.

(4) Evaluation The organic transistor was not destroyed even after the liquid crystal was injected, and as a result of measuring the transistor characteristics of the organic transistor, it was found that it was driven as a transistor. At this time, the ON current of the organic transistor was 1 × 10 ⁻⁴ A and the OFF current was 1 × 10 ⁻¹¹ A, and there was no change. The measurement conditions were that the gate voltage was applied from 100 V to -80 V in increments of -2 V, then the source-drain voltage was fixed at -80 V, and the current value flowing between the source and drain was measured. In any transistor evaluation, measurement was performed in the air in any case.
Further, when the change in the transistor characteristics with time was evaluated as immediately after production, 1 day, 3 days, 7 days, 2 weeks, and 1 month, no decrease was observed in both ON current and OFF current.

2. Comparative Example 1
(1) Production of substrate with organic transistor A substrate with an organic transistor having an organic transistor was produced in the same manner as in Example, except that the organic transistor protection partition wall production step was not performed.

As a result of measuring the transistor characteristics of the organic transistor of the produced substrate with an organic transistor, it was found that it was driven as a transistor. At this time, the ON current of the organic transistor was 1 × 10 ⁻⁴ A, and the OFF current was 1 × 10 ⁻¹¹ A. The measurement conditions were that the gate voltage was applied from 100 V to -80 V in increments of -2 V, then the source-drain voltage was fixed at -80 V, and the current value flowing between the source and drain was measured. In any transistor evaluation, measurement was performed in the air in any case.

(2) Production of counter substrate A glass substrate on which an ITO electrode is formed as a common electrode is thoroughly washed, and a photodimerization reaction type photo-alignment film material (trade name: ROP-103, manufactured by Roric Technology) on this glass substrate A 2 mass% cyclopentanone solution was spin-coated, dried at 130 ° C. for 10 minutes, and then irradiated with about 100 mJ / cm ^{2 of} linear ultraviolet light for alignment treatment. Next, 1.5 μm bead spacers were dispersed with a spin coater.

(3) Production of liquid crystal display element (organic semiconductor element) The relationship with the glass substrate on which the organic TFT has been formed by applying an ultraviolet curable sealing material to the peripheral edge of the counter substrate is parallel to the polarized ultraviolet irradiation direction and anti The sealing agent was photocured while applying pressure while facing both substrates so as to be in a parallel state. Next, an inlet for injecting liquid crystal into the cell gap of both glass substrates is provided at one end, and a liquid crystal material (R2301 made by AZ Electronic Materials) is attached to the upper part of the inlet, and the inside of the vacuum chamber is 10 Torr. In a state where exhaust was performed, the cell gap was injected at a temperature 10 to 20 ° C. higher than the nematic phase-isotropic transition temperature. After the injection, the liquid crystal material was gradually cooled to room temperature.

(4) Evaluation After injecting the liquid crystal, the organic transistor was destroyed by the liquid crystal and was found not to be driven as a transistor.

3. Comparative Example 2
(1) Preparation of substrate with organic transistor Organic substrate was formed by the same method as in Example, except that the organic transistor protective partition wall manufacturing step was not performed and the following passivation layer forming step was performed after the organic semiconductor layer forming step. A substrate with an organic transistor having a transistor was manufactured.

(Passivation layer formation process)
The passivation layer was formed by spin-coating a PVP solution diluted to 15% by mass with an ethanol solvent onto the substrate after forming the organic semiconductor layer. At this time, spin coating was performed at 2000 rpm for 15 seconds. Thereafter, the substrate was dried on a hot plate at 100 ° C. for 30 minutes.

As a result of measuring the transistor characteristics of the organic transistor of the produced organic semiconductor element, it was found that the transistor was driven as a transistor. At this time, the ON current of the organic transistor was 1 × 10 ⁻⁵ A, and the OFF current was 1 × 10 ⁻¹¹ A. The measurement conditions were that the gate voltage was applied from 100 V to -80 V in increments of -2 V, then the source-drain voltage was fixed at -80 V, and the current value flowing between the source and drain was measured. In any transistor evaluation, measurement was performed in the air in any case.

(2) Production of counter substrate A glass substrate on which an ITO electrode is formed as a common electrode is thoroughly washed, and a photodimerization reaction type photo-alignment film material (trade name: ROP-103, manufactured by Roric Technology) on this glass substrate A 2 mass% cyclopentanone solution was spin-coated, dried at 130 ° C. for 10 minutes, and then irradiated with about 100 mJ / cm ^{2 of} linear ultraviolet light for alignment treatment. Next, 1.5 μm bead spacers were dispersed with a spin coater.

(3) Production of liquid crystal display element (organic semiconductor element) The relationship with the glass substrate on which the organic TFT has been formed by applying an ultraviolet curable sealing material to the peripheral edge of the counter substrate is parallel to the polarized ultraviolet irradiation direction and anti The sealing agent was photocured while applying pressure while facing both substrates so as to be in a parallel state.
Next, an inlet for injecting liquid crystal into the cell gap of both glass substrates is provided at one end, and a liquid crystal material (R2301 made by AZ Electronic Materials) is attached to the upper part of the inlet, and the inside of the vacuum chamber is 10 Torr. In a state where exhaust was performed, the cell gap was injected at a temperature 10 to 20 ° C. higher than the nematic phase-isotropic transition temperature. After the injection, the liquid crystal material was gradually cooled to room temperature.

(4) Evaluation When the characteristics of the organic transistor were evaluated after injecting the liquid crystal, it was found that the organic transistor was not driven as a transistor.

4). Example 2
(1) Production of substrate for organic semiconductor element A glass substrate on which an ITO electrode is formed as a transparent electrode is thoroughly washed, and a transparent resist (trade name: NN780, manufactured by JSR) is spin-coated on the glass substrate to reduce the pressure. It dried and prebaked at 90 degreeC for 3 minute (s).
Subsequently, it exposed to a mask with 100 mJ / cm ² ultraviolet rays, developed with an inorganic alkali solution, and post-baked at 230 ° C. for 30 minutes. Thus, an organic transistor protection partition wall having a height of 1.5 μm surrounding the organic transistor was formed.

A 2% by mass cyclopentanone solution of a photodimerization reaction type photo-alignment film material (trade name: ROP-103, manufactured by Roric Technology) was spin-coated on the glass substrate on which the organic transistor protecting partition wall was formed, After drying at 130 ° C. for 10 minutes, alignment treatment was performed by irradiation with about 100 mJ / cm ^{2 of} linearly polarized ultraviolet rays.

(2) Fabrication of transistor side substrate (gate electrode forming step)
First, a metal mask having a gate electrode-shaped opening was placed on the surface of a glass substrate having a size of 150 mm × 150 mm × 0.7 mm, and then a chromium film having a thickness of 10 nm was formed. Next, a 200 nm aluminum film was deposited to form a gate electrode. The degree of vacuum at the time of vapor deposition was 1 × 10 ⁴ Pa, and the vapor deposition rate was about 1 kg / sec.

(Gate insulation layer formation process)
Next, a photoresist (acrylic negative resist) was spin-coated on the substrate as a gate insulating layer. The spin coating at this time was held at 800 rpm for 10 seconds. Thereafter, the substrate was dried at 80 ° C. for 3 minutes and then subjected to pattern exposure at 350 mJ / cm ² . Next, a development step was performed to remove portions other than the gate electrode, and then the substrate was dried in an oven at 200 ° C. for 30 minutes.

(Alignment layer formation process)
A 2% by mass cyclopentanone solution of a photo-dimerization reaction type photo-alignment film material (trade name: ROP-102, manufactured by Roric Technology) is spin-coated on the substrate, dried at 130 ° C. for 10 minutes, and then subjected to linear ultraviolet radiation. The alignment treatment was performed by irradiating polarized light of about 100 mJ / cm ² .

(Source / drain electrode formation process)
Next, a metal mask having source / drain electrode-shaped openings was disposed on the surface of the substrate after forming the gate insulating layer, and then an Au film having a thickness of 50 nm was deposited to form source / drain electrodes. At this time, the degree of vacuum at the time of vapor deposition was 1 × 10 ⁴ Pa, and the vapor deposition rate was about 1 kg / sec. When the formed source electrode and drain electrode were observed with a reflection optical microscope, the distance between the source electrode and the drain electrode (channel length) was 50 μm.

(Organic semiconductor layer formation process)
An organic semiconductor layer made of a thiophene-based organic semiconductor having a thickness of 50 nm was deposited on the entire surface of the substrate on which the source electrode and the drain electrode were formed.

As a result of measuring the transistor characteristics of the organic transistor of the manufactured transistor side substrate, it was found that the transistor was driven as a transistor. At this time, the ON current of the organic transistor was 1 × 10 ⁻⁴ A, and the OFF current was 1 × 10 ⁻¹¹ A. The measurement conditions were that the gate voltage was applied in increments of -2V from 100V to -80V. The source / drain voltage was fixed at −80 V, and the value of the current flowing between the source and drain was measured. In any transistor evaluation, measurement was performed in the air in any case.

(3) Production of liquid crystal display element (organic semiconductor element) An ultraviolet curable sealant is applied to the peripheral portion of the organic semiconductor element substrate, and the relationship with the transistor side substrate is parallel to the polarized ultraviolet irradiation direction and anti-polarized. The sealing agent was photocured while applying pressure while facing both substrates so as to be in a parallel state. Next, an inlet for injecting liquid crystal into the cell gap of both substrates is provided at one end, and a liquid crystal material (R2301 manufactured by AZ Electronic Materials) is attached to the upper part of the inlet, and the inside of the vacuum chamber is 10 Torr. In a state where exhaust was performed, the gas was injected into the cell gap at a temperature 10 to 20 ° C. higher than the nematic phase-isotropic transition temperature. After the injection, the liquid crystal material was gradually cooled to room temperature.

(4) Evaluation The organic transistor was not destroyed even after the liquid crystal was injected, and as a result of measuring the transistor characteristics of the organic transistor, it was found that it was driven as a transistor. At this time, the ON current of the organic transistor was 1 × 10 ⁻⁴ A and the OFF current was 1 × 10 ⁻¹¹ A, and there was no change. The measurement conditions were that the gate voltage was applied from 100 V to -80 V in increments of -2 V, then the source-drain voltage was fixed at -80 V, and the current value flowing between the source and drain was measured. In any transistor evaluation, measurement was performed in the air in any case.

5. Comparative Example 3
(1) Production of liquid crystal display element (organic semiconductor element) A liquid crystal display element (organic semiconductor element) was produced in the same manner as in Example 2 except that the substrate for organic semiconductor element produced by the following method was used. did.

(Method for producing substrate for organic semiconductor element)
A glass substrate on which an ITO electrode was formed as a transparent electrode was thoroughly washed, and a bead spacer having a diameter of 1.5 μm was applied on the glass substrate.

Next, a 2% by mass cyclopentanone solution of a photodimerization reaction type photo-alignment film material (trade name: ROP-103, manufactured by Rorlic Technology Co., Ltd.) is spin-coated on the glass substrate coated with the bead spacer, and 130 After drying at 10 ° C. for 10 minutes, alignment treatment was performed by irradiating with linearly polarized ultraviolet rays at about 100 mJ / cm ² .

(2) Evaluation The organic transistor was destroyed after injecting the liquid crystal, and as a result of measuring the transistor characteristics of the organic transistor, it was found that it was not driven as a transistor.

It is the schematic which shows an example of the board | substrate for organic-semiconductor elements of this invention. It is the schematic for demonstrating the effect of the board | substrate for organic-semiconductor elements of this invention. It is the schematic for demonstrating the effect of the board | substrate for organic-semiconductor elements of this invention. It is the schematic which shows the other example of the board | substrate for organic-semiconductor elements of this invention. It is the schematic which shows the other example of the board | substrate for organic-semiconductor elements of this invention. It is the schematic which shows the other example of the board | substrate for organic-semiconductor elements of this invention. It is the schematic which shows the other example of the board | substrate for organic-semiconductor elements of this invention. It is the schematic which shows the other example of the board | substrate for organic-semiconductor elements of this invention. It is the schematic which shows the other example of the board | substrate for organic-semiconductor elements of this invention. It is the schematic which shows an example of the board | substrate with an organic transistor of this invention. It is the schematic for demonstrating the effect of the board | substrate with an organic transistor of this invention. It is the schematic which shows an example of the organic transistor used for the board | substrate with an organic transistor of this invention. It is the schematic which shows the other example of the board | substrate with an organic transistor of this invention. It is the schematic which shows the other example of the board | substrate with an organic transistor of this invention. It is the schematic which shows the other example of the board | substrate with an organic transistor of this invention. It is the schematic which shows an example of the organic-semiconductor element of the 1st aspect of this invention. It is the schematic which shows an example of the organic-semiconductor element of the 2nd aspect of this invention.

Explanation of symbols

1, 2, 31, 51 ... Substrate 2, 52 ... Transparent electrode 3, 23 ... Organic transistor protecting partition 4 ... Color filter layer 4a, 4a ', 4a'',4a''' ... Colored layer 4b ... Overcoat Layer 4c ... Light-shielding part 5, 24 ... Orientation layer 6, 25 ... Spacer part 10, 10 ′, 10 ″, 10 ′ ″... Organic semiconductor element substrate 20, 20 ′, 20 ″. 32 ... Organic transistor 22A ... Gate electrode 22B ... Gate insulating film 22C ... Semiconductor layer 22D ... Source electrode 22E ... Drain electrode 30 ... Transistor side substrate 40A, 40B ... Organic semiconductor element 41 ... Liquid crystal material

Claims (5)

  A substrate for an organic semiconductor element, comprising: a substrate; a transparent electrode formed on the substrate; and a frame-shaped organic transistor protective partition wall formed on the transparent electrode and having an opening. An organic semiconductor element having a transistor-side substrate comprising the substrate for an organic semiconductor element according to claim 1 and a substrate and an organic transistor formed on the substrate,
The organic semiconductor element, wherein the organic semiconductor element substrate and the transistor side substrate are arranged to face each other so that the organic transistor is accommodated in an opening of the organic transistor protecting partition wall.   A substrate, a plurality of organic transistors formed on the substrate, and a frame-shaped organic transistor protection partition wall formed on the substrate so as to surround the organic transistor and having an opening. A substrate with an organic transistor. An organic semiconductor element having a substrate with an organic transistor according to claim 3 and a counter substrate having a substrate and a transparent electrode formed on the substrate,
The organic semiconductor element, wherein the substrate with an organic transistor and the counter substrate are arranged to face each other so that the opening of the partition for protecting the organic transistor is closed by the counter substrate.   5. The organic semiconductor element according to claim 2, wherein the inside of the organic transistor protecting partition wall is depressurized. 6.

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