JP2008067113A - Chip type antenna - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a chip type antenna which attains excellent radiation characteristics in a wide transmission/reception frequency band, and is downsized. <P>SOLUTION: In the chip type antenna 100, a plurality of band-shaped internal electrodes 301 to 311 are arranged with a predetermined pitch on a first substrate layer 211 and a second substrate layer 202 among a plurality of substrate layers of a substrate 200 consisting of a dielectric material or a magnetic material, and the band-shaped internal electrodes 301, 303, 305, 307, 309, 311 of the first substrate layer 211 and band-shaped internal electrodes 302, 304, 306, 308, 310 of the second substrate layer 202 are alternately arranged in a projection plane in a lamination direction A of a plurality of substrate layers 201 to 213, and are connected in series through through holes 601 to 612. This constructs a substantially spiral radiation electrode 300 with a winding axis perpendicular to the lamination direction A. The width of each of the band-shaped internal electrodes 301 to 311 is formed in a predetermined width between 0.3 to 0.7 mm. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a chip-type antenna, and more particularly to a chip-type antenna used for a mobile communication device such as a mobile phone, a wireless LAN (Local Area Network), and the like.

  In recent years, mobile phones have expanded worldwide as wireless communication devices that transmit and receive digital modulation signals, and various modulation methods have been proposed. In particular, in the GSM system that is widespread mainly in Europe, transmission / reception bands are transmitted and received as a band expansion version in addition to the approximately 900 MHz band (GSM900: hereinafter simply referred to as GSM band) with transmission / reception bands of 880-915 MHz and 925-960 MHz, respectively. Bands are approximately 1.8 GHz bands (DCS1800: hereinafter referred to simply as DCS bands), 1710-1785 MHz and 1805-1880 MHz, respectively, and approximately 1.9 GHz bands (PCS1900) in which transmission and reception bands in the United States are 1850-1910 MHz and 1930-1990 MHz, respectively. : Hereinafter simply referred to as the PCS band). Further, a UMTS (Universal Mobile Telecommunications System) system has been proposed as a standard for next-generation mobile phones in Europe. This UMTS standard includes a standard called “W-CDMA” that is currently used in 3G mobile phones in Japan, and the word “UMTS” is used instead of the word “W-CDMA”. Cases can also be seen. That is, recently, operation of a WCDMA system (WCDMA2000) in which the transmission / reception bands defined by 3GPP are 1920-1980 MHz and 2110-2170 MHz, respectively, as a third-generation modulation system in Japan has been started. Has been. Since the bandwidth of one channel of the WCDMA system is 5 MHz, 12 channels are formed by frequency division in the transmission / reception band, and more channels are formed by code division on each channel.

  In recent years, wireless LANs that connect personal computers and the like to each other via a network using wireless communication have been put into practical use, and the degree of their spread is increasing.

  Due to the demand for miniaturization of communication devices and electronic devices such as mobile phones and personal computers, antennas used for these devices also need to be miniaturized. In particular, the demand for downsizing and thinning is increasing more and more in mobile phones, while in wireless LANs, thin wireless LAN cards with built-in antennas for wireless communication are often used by connecting them to a housing such as a personal computer. .

  For this reason, since a small antenna is required as an antenna for a mobile phone or a wireless LAN, a chip antenna having a radiation electrode or the like provided on the surface or inside of a substrate such as a dielectric or a magnetic material is often used. However, further downsizing of the chip-type antenna itself is strongly desired due to the demand for further downsizing of cellular phones and the like.

  Conventionally, as a technique for reducing the size of such a chip-type antenna, for example, a substrate formed by laminating a plurality of layers made of a dielectric material or a magnetic material, and an internal electrode formed in a predetermined layer among the plurality of layers A radiation electrode constituted by: a power supply end side terminal formed on the surface of the substrate to which one end of the radiation electrode is connected; an open end side terminal formed on the surface of the substrate connected to the other end of the radiation electrode; (For example, refer to Patent Document 1, Patent Document 2, and Patent Document 3).

Japanese Patent Laid-Open No. 5-110257 JP-A-10-98322 JP 2005-217633 A

  However, the conventional chip-type antenna described in Patent Document 1 and the like cannot be sufficiently miniaturized and it is difficult to realize a wide transmission / reception frequency bandwidth. It could not be used for mobile communication devices such as telephones. That is, it has been difficult to achieve both a reduction in size and a wider band.

  Further, even the conventional chip type antennas described in Patent Documents 2 and 3 and the like cannot sufficiently meet the demand for further miniaturization. On the other hand, a chip-type antenna used for a mobile phone or the like corresponding to the above-described WCDMA system needs to have good radiation characteristics in a frequency band of 1500 MHz to 2500 MHz, for example, but is described in Patent Documents 2 and 3 above. The conventional chip-type antenna has not been provided with sufficiently good radiation characteristics in such a frequency band.

  In the conventional chip type antenna, the chip type antenna is manufactured when the components of the individual chips such as the radiation electrode formed in a substantially spiral shape inside the base do not have strict symmetry. The process may cause warping of the laminate. In addition, when the chip antenna is mounted on an internal substrate such as a mobile phone, the mounting stability may be problematic.

  A first object of the present invention is to provide a chip-type antenna that can be further reduced in size compared to the prior art, has a wide transmission / reception frequency bandwidth, and can obtain good radiation characteristics within the wide transmission / reception frequency band. .

  A second object of the present invention is to provide a chip type antenna that does not cause warpage of a laminated body in the process of manufacturing a chip type antenna and is excellent in mounting stability.

  In order to solve the above-described problems, the present inventor has conducted various studies and studies on the configuration of a wideband chip antenna having excellent radiation characteristics as well as being capable of further downsizing. The present inventors have found a chip type antenna structure that can be further downsized and has excellent radiation characteristics in a wide band. Further, it has been found that the chip type antenna having such a configuration can prevent the laminate from warping in the manufacturing process and can improve the mounting stability.

  That is, in order to solve the above-described problems, a chip antenna according to the present invention includes a substrate formed by laminating a plurality of layers made of at least one of a dielectric material and a magnetic material, and a predetermined layer among the plurality of layers. A radiation electrode constituted by the formed internal electrode, one end of the radiation electrode is connected, a power supply end terminal formed on the surface of the base, and the other end of the radiation electrode is connected, and the surface of the base Of the plurality of layers, a plurality of strip-like internal electrodes are disposed at a predetermined pitch in the first layer and the second layer, and the first layer is formed at a predetermined pitch. The strip-shaped internal electrodes of the layers and the strip-shaped internal electrodes of the second layer are alternately arranged in the projection plane in the stacking direction, and are connected in series by the through-hole electrodes, and the winding axis is A substantially spiral that is perpendicular to the stacking direction A strip-shaped radiation electrode is formed, and the width of the strip-shaped internal electrode is 0.3 mm to 0.7 mm.

  According to this configuration, the chip antenna can be further reduced in size compared to the conventional one, and excellent radiation characteristics can be obtained within a wide transmission / reception frequency band. In addition, since the components of the individual chips such as the radiation electrode formed inside the substrate have symmetry, there is no occurrence of warping of the laminate in the process of manufacturing the chip antenna, and the mounting. A chip antenna having excellent stability can be obtained.

  Also. The number of turns of the substantially spiral radiation electrode is 3 or more and 4.5 or less. According to this configuration, since the radiation electrode is formed with a relatively small number of turns, the chip antenna can be further reduced in size.

  The distance between the internal electrode of the first layer and the internal electrode of the second layer is 450 μm to 1000 μm. According to this configuration, since the internal electrode of the first layer and the internal electrode of the second layer are within the above-mentioned distance of 450 μm to 1000 μm in the substrate, the chip antenna can be sufficiently miniaturized.

  Furthermore, the frequency at which VSWR is minimized is in the range of 1500 MHz to 2500 MHz, and the bandwidth at which VSWR is 3 or less is 200 MHz or more. According to such a configuration, it is possible to realize a chip antenna having excellent radiation characteristics particularly in a wide transmission / reception frequency band that is practically effective for the WCDMA communication system.

  According to the present invention, it is possible to further reduce the size of a chip-type antenna and obtain a chip-type antenna having excellent radiation characteristics within a wide transmission / reception frequency band. Further, it is possible to prevent the laminated body from being warped in the process of manufacturing the chip-type antenna, and it is possible to obtain a chip-type antenna having excellent mounting stability.

  A chip antenna according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view of a chip antenna according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view of the chip antenna of FIG. FIG. 3 is a diagram showing the configuration of electrode patterns (radiation electrode pattern, through-hole electrode pattern, back electrode pattern) in each of the plurality of layers of the chip antenna of FIG. Further, FIG. 4 shows a second base layer (layer No. 2) 202 and an eleventh base layer (layer No. 11) in which a strip-like internal electrode is disposed among the plurality of layers shown in FIGS. 2A is an enlarged view of 211, (a) is an enlarged view of the second substrate layer (layer No. 2) 202, and (b) is an enlarged view of the 11th substrate layer (layer No. 11) 211. FIG.

  The chip type antenna 100 according to an embodiment of the present invention is formed in a chip type (ultra thin piece type) having a length of 4.5 mm, a width of 3.2 mm, and a height (thickness) of 1.0 mm, for example. Primarily, it is a so-called single band antenna having a transmission / reception frequency band corresponding to the WCDMA communication system of a mobile phone. As shown in FIGS. 1 to 3, the chip antenna 100 includes a base body 200 configured by laminating a plurality of sheet-like base layers 201 to 212 made of at least one of a dielectric material and a magnetic material, and a plurality of base materials 200. A radiation electrode 300 composed of internal electrodes 301 to 311 formed on a predetermined substrate layer of the substrate layer; one end of the radiation electrode 300 is connected; and a feed end terminal 400 formed on the surface of the substrate 200; The other end of the radiation electrode 300 is connected and includes an open end side terminal 500 formed on the surface of the base body 200.

  The chip antenna 100 according to the present embodiment is characterized in that a plurality of strip-like internal electrodes 301 to 311 are arranged at a predetermined pitch on the first substrate layer 211 and the second substrate layer 202 among the plurality of substrate layers. The band-shaped internal electrodes 301, 303, 305, 307, 309, 311 of the first base layer 211 and the band-shaped internal electrodes 302, 304, 306, 308, 310 of the second base layer 202 are The base layers 201 to 212 are alternately arranged in the projection plane in the stacking direction A (see FIG. 2), and are connected in series by the through-hole electrodes 601 to 612, and the winding axis is the stacking direction A. The reason is that a substantially spiral radiating electrode 300 is formed in a direction perpendicular to (see FIG. 2).

  Further, in the chip antenna 100 of the present embodiment, the width of each of the strip-like internal electrodes 301 to 311 is formed to a predetermined width of 0.3 mm to 0.7 mm, and the substantially spiral radiating electrode 300 The number of windings is not less than 3 and not more than 4.5, and the band-like internal electrodes 301, 303, 305, 307, 309, and 311 of the first base layer 211 and the band-like form of the second base layer 202 are formed. The interval between the internal electrodes 302, 304, 306, 308, and 310 is formed at a predetermined interval of 450 μm to 1000 μm, the frequency at which the VSWR is minimized is in the range of 1500 MHz to 2500 MHz, and the VSWR is 3 or less. It is also characterized in that it is formed such that the bandwidth becomes 200 MHz or more.

  The configuration of the chip antenna 100 according to the embodiment of the present invention shown in FIG. 1 will be described in more detail. As shown in FIG. 1, the base body 200 is formed in a rectangular piece shape as a whole by at least one of a dielectric material and a magnetic material. The substrate 200 is made of a ceramic having a low loss at a high frequency including, for example, alumina, silica, magnesium and the like. When a dielectric material is used as the substrate 200, the dielectric constant and the dielectric loss greatly affect the antenna characteristics. As shown in FIGS. 2 and 3, the base body 200 is formed by laminating a plurality of base body layers. Specifically, the base body 200 is formed from the uppermost layer (first layer) 201 to the lowermost layer (12th layer). Twelve substrate layers up to 212 are laminated. In FIG. 2, illustration of a part of the substrate layers having the same structure as the upper and lower substrate layers is omitted. 2 and 3 also show the configuration of the back surface of the lowermost layer (the twelfth layer) 212. FIG. Here, in FIG. 2, the projection surface 212b of the back surface 212B of the lowest layer (12th layer) 212 is shown.

  The configuration of each of the plurality of substrate layers 201 to 212 will be briefly described. As shown in FIG. 3, the uppermost layer (first base layer, layer No. 1) 201 is not formed with a radiation electrode, input / output electrode, through-hole electrode, etc. The base layer, that is, the radiation electrode formed on the surface of the second base layer (layer No. 2) 202 described below has a function of covering the top surface and embedding it in the base 200. Note that the reference numeral 201a indicates the surface (upper surface) of the uppermost layer (first base layer, layer No. 1) 201. For example, when the chip antenna 100 is mounted on a substrate or the like, for example, a supply end (feeding power) It is a mark formed to show the (end) side, and is formed of copper foil or the like. As will be described later, the plurality of substrate layers 201 to 212 constituting the substrate 200 are manufactured by firing after lamination, and the thickness (sheet thickness) after firing the first substrate layer (layer No. 1) 201. ) Is 50 μm.

  As shown in FIGS. 2 and 3, the second base layer (layer No. 2) 202 is provided with strip-like internal electrodes 302, 304, 306, 308, 310 at a predetermined pitch on the upper surface thereof. . The widths of the strip-like internal electrodes 302, 304, 306, 308, 310 are formed to a predetermined width from 0.3 mm to 0.7 mm. Further, as shown in FIG. 4A, the strip-shaped internal electrodes 302, 304, 306, 308, and 310 have through-hole electrode connecting portions 302a and 302b, 304a and 304b, and 306a protruding in opposite directions at both ends, respectively. 306b, 308a and 308b, 310a and 310b. These through-hole electrode connecting portions 302a and 302b, 304a and 304b, 306a and 306b, 308a and 308b, 310a and 310b have through-hole electrodes 601 and 602, 603 and 604, 605 and 606, 607 and 608, and 609, respectively. 610 is formed. The strip-shaped internal electrodes 302, 304, 306, 308, and 310 are connected to through-hole electrodes 601 and 602, 603 and 604, 605 and 606, 607 and 608, and 609 and 610, which will be described later. .11) 211 is electrically connected to the strip-shaped internal electrodes 301, 303, 305, 307, 309, 311. Thus, in the second base layer (layer No. 2) 202, the strip-shaped internal electrodes 302, 304, 306, 308, 310 are arranged at a predetermined pitch among the plurality of base layers 201-212. Constitutes the "second layer". The thickness (sheet thickness) after firing of the second base layer (layer No. 2) 202 is 50 μm.

  As shown in FIGS. 2 and 3, the third base layer (layer No. 3) 203 has no radiation electrode or the like formed on the surface (upper surface), and the third base layer (layer No. 3). Through-hole electrodes 601 and 602, 603 and 604, 605 and 606, 607 and 608, and 609 and 610 (reference numerals are omitted in FIG. 2) are formed through 203 in the thickness direction. The thickness (sheet thickness) after firing of the third base layer (layer No. 3) 203 is 50 μm.

  Fourth substrate layer (layer No. 4) 204, fifth substrate layer (layer No. 5) 205, sixth substrate layer (layer No. 6) 206, seventh substrate layer (layer No. 7) 207, eighth The base layer (layer No. 8) 208 and the ninth base layer (layer No. 9) 209 are different from the above-described third base layer (layer No. 3) 203 except that the thickness (sheet thickness) of the base layer is different. As shown in FIG. 2 [only the fourth base layer (layer No. 4) 204 is shown] and FIG. 3, the surface (upper surface) is not formed with a radiation electrode or the like, and has a similar thickness. Through-hole electrodes 601 and 602, 603 and 604, 605 and 606, 607 and 608, and 609 and 610 (the reference numerals are omitted in FIGS. 2 and 3) are formed through the vertical direction. From the fourth base layer (layer No. 4) 204 to the ninth base layer (layer No. 9) 209, the thickness (sheet thickness) after firing of each base layer is 100 μm.

  The tenth base layer (layer No. 10) 210 is configured in exactly the same manner as the above-described third base layer (layer No. 3) 203, including the thickness (sheet thickness) of the base layer. 3, no radiation electrode or the like is formed on the surface (upper surface), and the through-hole electrodes 601 and 602, 603 and 604, 605 and 606, 607 and 608, and 609 penetrate through the thickness direction. 610 (not shown in FIG. 2). The thickness (sheet thickness) after firing of the tenth base layer (layer No. 10) 210 is 50 μm.

  As shown in FIGS. 2 and 3, strip-like internal electrodes 301, 303, 305, 307, 309, and 311 are arranged on the upper surface of the eleventh base layer (layer No. 11) 211 at a predetermined pitch. ing. As described above, the eleventh base layer (layer No. 11) 211 includes strip-like internal electrodes 301, 303, 305, 307, 309, and 311 arranged at a predetermined pitch among the plurality of base layers 201 to 213. Constitutes the “first layer”. The widths of these strip-shaped internal electrodes 301, 303, 305, 307, 309, and 311 are formed to have a predetermined width of 0.3 mm to 0.7 mm. The strip-shaped internal electrode 309 constitutes a feeding end side (radiation) electrode as a part of the radiation electrode, while the strip-shaped internal electrode 311 constitutes an open end side (radiation) electrode as a part of the radiation electrode. is doing. As shown in FIG. 4B, the band-shaped internal electrode (feeding end side electrode) 309 has a through-hole electrode connecting portion 309a at the end thereof, while the band-shaped internal electrode (open end side electrode) ) 311 has a through-hole electrode connecting portion 311a at its end. As shown in FIG. 2, the through-hole electrode connecting portion 309 a of the strip-shaped internal electrode (feeding end side electrode) 309 is connected to the bottom surface of a twelfth base layer (layer No. 12) 212 described later via the through-hole electrode 611. It is connected to the power supply end side terminal 400 formed on the back surface of the base body 200. On the other hand, the strip-shaped internal electrode (open end side electrode) 311 is formed on the open end side formed on the lower surface 212B (back surface of the base body 200) of the twelfth base layer (layer No. 12) 212 through the through-hole electrode 612. It is connected to the terminal 500. As a result, as shown in FIG. 2, one end of the radiation electrode 300 is connected to the feeding end side terminal 400 formed on the surface of the base body 200, and the other end of the radiation electrode 300 is connected to the open end side terminal 500. The strip-shaped internal electrodes 301, 303, 305, 307, 309, and 311 of the first base layer 211 and the strip-shaped internal electrodes 302, 304, 306, 308, and 310 of the second base layer 202 are laminated. A substantially spiral that is alternately arranged in the projection plane in the direction A (see FIG. 2) and is connected in series by the through-hole electrodes 601 to 612 so that the winding axis is in a direction perpendicular to the stacking direction A. A radiating electrode 300 is formed. The thickness (sheet thickness) after firing of the eleventh base layer (layer No. 11) 211 is 50 μm.

  The twelfth substrate layer (layer No. 12) 212 is the lowermost layer of the substrate 200, and therefore the lower surface (back surface) 212B constitutes the mounting surface of the chip antenna 100. First, as shown in FIGS. 2 and 3, no radiation electrode or the like is formed on the surface (upper surface) 212A of the twelfth substrate layer (layer No. 12) 212, and the twelfth substrate layer (layer) is not formed. No. 12) A through-hole electrode 611 and a through-hole electrode 612 are formed through the thickness direction of No. 212. Further, on the lower surface (back surface) 212B of the twelfth base layer (layer No. 12) 212, as shown in FIG. 2 and FIG. A terminal 500 is formed. The power supply end side terminal 400 and the open end side terminal 500 are connected to the through-hole electrode 611 and the through-hole electrode 612, respectively.

  Further, on the lower surface (back surface) 212B of the twelfth base layer (layer No. 12) 212, as shown in FIGS. 2 and 3, the feeding end side terminal 400 and the open end side terminal 500 are separated from each other for reinforcement. Terminals 701 to 712 are formed. The reinforcing terminals 701 to 712 do not make electrical connection, and the lower surface (back surface) 212B of the twelfth base layer (layer No. 12) 212 that becomes the mounting surface of the chip antenna 100 is peeled off from the substrate or the like. This is a terminal that increases the adhesive strength in order to prevent this from occurring. Therefore, it is formed along the peripheral side of the lower surface (back surface) 212B of the twelfth base layer (layer No. 12) 212, excluding the portion where the power supply end side terminal 400 and the open end side terminal 500 are formed. Are formed at equal intervals at the end in the width direction. The twelfth base layer (layer No. 12) 212 has a thickness (sheet thickness) after firing of 50 μm.

  According to the above configuration, in the chip antenna 100 according to the embodiment of the present invention illustrated in FIGS. 1 to 4, the strip-shaped internal electrodes 301, 303, 305, 307, 309 of the first layer 211 are provided. The distance between 311 and the strip-like internal electrodes 302, 304, 306, 308, 310 of the second layer 202 (interval in the stacking direction A) is 750 μm. In the chip type antenna of the present invention, it is desirable that this interval is formed at a predetermined interval of 450 μm to 1000 μm.

  As described above, the chip-type antenna 100 according to the present embodiment includes a plurality of sheet-like base layers 201 to 212, through-hole electrodes 601 to 612 formed thereon, strip-like internal electrodes 301 to 311, and feed end terminals. 400, an open end side terminal 500, and reinforcing terminals 701 to 712. Each of the sheet-like base layers 201 to 212 is formed of, for example, a green sheet made of a dielectric material such as ceramic or resin that can be fired at a low temperature. In addition, each of the strip-shaped internal electrodes 301 to 311, the feeding end side terminal 400, the open end side terminal 500, and the reinforcing terminals 701 to 712 are formed by printing a conductive paste mainly composed of Ag or Cu. The sheet-like base layers 201 to 212 are arranged and laminated as described above from the first layer to the twelfth layer, and then fired, whereby the multilayer chip antenna 100 shown in FIGS. 1 to 4 is obtained. .

  The present inventor has parameters such as the width of the strip-shaped internal electrodes 301 to 311 as parameters, the electrode length of the substantially spiral-shaped radiation electrode 300 composed of these strip-shaped internal electrodes 301 to 311 and the like, and the substantially spiral-shaped radiation electrode. A chip-type antenna with 300 turns was produced, and the antenna characteristics were measured. In the chip type antennas of Examples 1 to 12 shown below, the chip type antenna 100 shown in FIGS. It explains using.

  That is, the electrode width of the strip-shaped internal electrode, the electrode length of the strip-shaped internal electrode (radiation electrode made up of, etc.), the pitch between the electrodes of the strip-shaped internal electrode, For Examples 1 to 12 in which the number of internal electrodes) was varied as shown in FIGS. 5, 9, 13, and 17, the voltage standing wave ratio with respect to frequency ( Voltage Standing Wave Ratio (hereinafter referred to as VSWR) was measured. 6 to 8, FIG. 10 to FIG. 12, FIG. 14 to FIG. 16, and FIG. 18 to FIG. 20 are graphs showing the relationship between the VSWR and frequency of the chip antennas of Examples 1 to 12, respectively.

  FIG. 5 is a diagram showing an electrode configuration of an example of the chip antenna according to the embodiment of the present invention, where (a) is Example 1, (b) is Example 2, (c) is Example 3, and FIG. Each electrode configuration is shown.

  The chip-type antenna of Example 1 includes a strip-shaped internal electrode disposed on an eleventh substrate layer (layer No. 11) 211 as a “first layer” and a second substrate layer as a “second layer”. (Layer No. 2) The strip-like internal electrodes arranged in 202 were formed in the electrode shapes shown in FIG. 5A, respectively, and arranged at the pitch shown in FIG. That is, in the chip-type antenna of Example 1, strip-like internal electrodes 302a, 304a, 306a, and 308a are arranged on the upper surface of the second base layer (layer No. 2) 202 at a predetermined pitch. The strip-shaped internal electrodes 306a and 308a are connected to the through-hole electrode at the center in the width direction of the second base layer (layer No. 2) 202, and each is formed in an L shape although the directions are different. Yes. That is, in the chip-type antenna of Example 1, the strip-like internal electrodes 306a and 308a disposed on the upper surface of the second base layer (layer No. 2) 202 are respectively shown in FIG. 3 and the open end side terminal 500 shown in FIG. Accordingly, the strip-like internal electrodes 306a and 308a disposed on the upper surface of the second base layer (layer No. 2) 202 constitute a feed end electrode and an open end electrode having a through-hole electrode connection portion.

  On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 5A, strip-like internal electrodes 301a, 303a, 305a are arranged at a predetermined pitch. The strip-shaped internal electrodes 302 a, 304 a, 306 a, and 308 a disposed on the upper surface of the second base layer (layer No. 2) 202 and the upper surface of the eleventh base layer (layer No. 11) 211 are disposed. Band-shaped internal electrodes 301a, 303a, and 305a are through-hole electrodes 601 to 606 [not shown in FIG. 5A, and are different from the positions of the through-hole electrodes 601 to 606 shown in FIGS. In some cases (hereinafter the same)], the substantially spiral radiation electrode 300 is configured. In the chip-type antenna of Example 1, the electrode widths of the respective strip-like internal electrodes 302a, 304a, 306a, and 308a and the electrode widths of the respective strip-like internal electrodes 301a, 303a, and 305a were each formed to be 0.3 mm. In addition, as shown in FIG. 5A, the number of turns of the substantially spiral radiating electrode 300 is three, and the electrode length of the radiating electrode 300 is relatively short.

  FIG. 6 shows the result of measuring the VSWR with respect to frequency for the chip antenna of Example 1. FIG. 6A is a graph showing the relationship between VSWR and frequency of the chip-type antenna of Example 1, and FIG. 6B is an enlarged scale of frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 6A and 6B, in the chip antenna of the first embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 2064 MHz. Thus, it has been found that the bandwidth where the VSWR is 3 or less is secured by the width of about 229 MHz from about 1941 MHz to about 2170 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less in a wide frequency band substantially corresponding to the target UMTS band can be obtained.

  The chip-type antenna of Example 2 includes a strip-shaped internal electrode disposed on an eleventh substrate layer (layer No. 11) 211 as a “first layer” and a second substrate layer as a “second layer”. (Layer No. 2) The strip-like internal electrodes arranged in 202 were formed in the electrode shapes shown in FIG. 5B, respectively, and arranged at the pitch shown in FIG. That is, in the chip-type antenna of Example 2, strip-shaped internal electrodes 302b, 304b, 306b, and 308b are disposed on the upper surface of the second base layer (layer No. 2) 202. The band-like internal electrodes 306b and 308b are connected to the through-hole electrode at the center in the width direction of the second base layer (layer No. 2) 202, and each is formed in an L-shape although the directions are different. This is the same as the chip antenna of the first embodiment. That is, also in the chip type antenna of Example 2, the strip-like internal electrodes 306b and 308b disposed on the upper surface of the second base layer (layer No. 2) 202 are respectively connected through the through-hole electrodes in FIGS. 3 and the open end side terminal 500 shown in FIG. Accordingly, the strip-shaped internal electrodes 306b and 308b disposed on the upper surface of the second base layer (layer No. 2) 202 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion.

  On the other hand, on the top surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 5B, strip-shaped internal electrodes 301b, 303b, 305b are arranged. The strip-shaped internal electrodes 302b, 304b, 306b, and 308b disposed on the upper surface of the second base layer (layer No. 2) 202 and the upper surface of the eleventh base layer (layer No. 11) 211 are disposed. The strip-shaped internal electrodes 301b, 303b, and 305b are connected via through-hole electrodes 601 to 606 (not shown in FIG. 5B), thereby forming a substantially spiral radiation electrode 300. . In the chip-type antenna of Example 2, the electrode width of each strip-shaped internal electrode 302b, 304b, 306b, 308b and the electrode width of each strip-shaped internal electrode 301b, 303b, 305b were all formed to be 0.5 mm.

  On the other hand, as shown in FIG. 5B, the number of turns of the substantially spiral radiating electrode 300 is three as in the chip antenna of Example 1, and the electrode length of the radiating electrode 300 is also the same as that of Example 1. Similar to the chip-type antenna, it was relatively short. Therefore, in the chip-type antenna of Example 2, the strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” 2 The shape of the strip-like internal electrode disposed on the base layer (layer No. 2) 202 is substantially the same as that of the chip antenna of the first embodiment, but the width of each electrode is 5/3 times that of the first embodiment. It has become. Therefore, as is apparent from FIGS. 5A and 5B, the band-shaped internal electrode disposed on the eleventh substrate layer (layer No. 11) 211 as the “first layer” and the “second layer” As in the chip antenna of the first embodiment, the strip-shaped internal electrode disposed on the second base layer (layer No. 2) 202 as the “layer” is the stacking direction A (see FIG. 2) is alternately arranged in the projection plane, but in the chip type antenna of the second embodiment shown in FIG. 5B, compared to the chip type antenna of the first embodiment shown in FIG. The distance between both electrodes is narrower in the projection plane.

  FIG. 7 shows the result of measuring VSWR with respect to frequency for the chip-type antenna of Example 2. FIG. 7A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 2, and FIG. 7B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 7A and 7B, in the chip type antenna of the second embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 2157 MHz. Thus, it has been found that the bandwidth where the VSWR is 3 or less is secured by the width of about 262 MHz from about 2018 MHz to about 2280 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less in a wide frequency band substantially corresponding to the target UMTS band can be obtained.

  The chip-type antenna of Example 3 includes a strip-shaped internal electrode disposed on an eleventh substrate layer (layer No. 11) 211 as a “first layer” and a second substrate layer as a “second layer”. (Layer No. 2) The strip-like internal electrodes arranged in 202 were formed in the electrode shapes shown in FIG. 5C, respectively, and arranged at the pitch shown in FIG. That is, in the chip-type antenna of Example 3, strip-shaped internal electrodes 302c, 304c, 306c, and 308c are disposed on the upper surface of the second base layer (layer No. 2) 202. The strip-shaped internal electrodes 306c and 308c are connected to the through-hole electrode at the center in the width direction of the second base layer (layer No. 2) 202, and each is formed in an L shape although the directions are different. This is the same as the chip antennas of the first and second embodiments. That is, in the chip-type antenna of Example 3, the band-like internal electrodes 306c and 308c disposed on the upper surface of the second base layer (layer No. 2) 202 are respectively shown in FIG. 2 and FIG. 3 and the open end side terminal 500 shown in FIG. Therefore, the strip-shaped internal electrodes 306c and 308c disposed on the upper surface of the second base layer (layer No. 2) 202 constitute a feed end electrode and an open end electrode having a through-hole electrode connection portion.

  On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 5C, strip-shaped internal electrodes 301c, 303c, 305c are arranged. The strip-shaped internal electrodes 302 c, 304 c, 306 c, and 308 c disposed on the upper surface of the second base layer (layer No. 2) 202 and the top surface of the eleventh base layer (layer No. 11) 211 are disposed. The band-shaped internal electrodes 301c, 303c, and 305c are connected via through-hole electrodes 601 to 606 (not shown in FIG. 5C), thereby forming a substantially spiral radiation electrode 300. . In the chip-type antenna of Example 3, the electrode widths of the strip-like internal electrodes 302c, 304c, 306c, and 308c and the electrode widths of the strip-like internal electrodes 301c, 303c, and 305c were all formed to be 0.7 mm. On the other hand, as shown in FIG. 5 (c), the number of turns of the substantially spiral radiating electrode 300 is three as in the case of the chip antennas of the first and second embodiments. Similar to the chip type antennas 1 and 2, the antenna was relatively short.

  Therefore, in the chip-type antenna of Example 3, the strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” 2 The shape of the strip-shaped internal electrode disposed on the base layer (layer No. 2) 202 is substantially the same as that of the chip antennas of the first and second embodiments, but each electrode width is 7/3 times that of the first embodiment. The width is 7/5 times that of the second embodiment. Therefore, as is apparent from FIGS. 5A, 5B, and 5C, the band-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” The strip-shaped internal electrode disposed on the second base layer (layer No. 2) 202 as the “second layer” has a plurality of base layers 201 to 213 similar to the chip antennas of the first and second embodiments. Are alternately arranged in the projection plane in the stacking direction A (see FIG. 2). However, in the chip antenna of Example 3 shown in FIG. 5C, the distance between the electrodes is eliminated in the projection plane. , Some overlap.

  FIG. 8 shows the result of measuring the VSWR with respect to frequency for the chip-type antenna of Example 3. FIG. 8A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 3, and FIG. 8B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 8A and 8B, in the chip type antenna of the third embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 2261 MHz. Thus, it has been found that the bandwidth where VSWR is 3 or less is ensured by a width of about 294 MHz from about 2108 MHz to about 2402 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less were obtained in a wide frequency band. Moreover, although the bandwidth where VSWR is 3 or less is slightly shifted to the high frequency side, it is found that the bandwidth substantially corresponds to the target UMTS band and is practically sufficient.

  FIG. 9 is a diagram showing an electrode configuration of an example of the chip antenna according to the embodiment of the present invention, where (d) is Example 4, (e) is Example 5, (f) is Example 6, and FIG. Each electrode configuration is shown.

  The chip type antenna of Example 4 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The band-like internal electrodes formed in the layer No. 2) 202 were each formed in the electrode shape shown in FIG. 9D and arranged at the pitch shown in FIG. That is, in the chip-type antenna of Example 4, strip-shaped internal electrodes 302d, 304d, 306d, and 308d are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 9D, strip-shaped internal electrodes 301d, 303d, 305d, 307d, and 309d are formed. The strip-shaped internal electrodes 307d and 309d are connected to a through-hole electrode (not shown) at the center in the width direction of the eleventh base layer (layer No. 11) 211, and the other strip-shaped internal electrodes 301d, The length is approximately half that of 303d and 305d.

  That is, in the chip-type antenna of Example 4, the strip-like internal electrodes 307d and 309d formed on the upper surface of the eleventh base layer (layer No. 11) 211 are through-hole electrodes 611 and 612 (see FIG. 2). 2 are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Accordingly, the strip-shaped internal electrodes 307d and 309d formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion. Then, the strip-shaped internal electrodes 302d, 304d, 306d, and 308d formed on the upper surface of the second base layer (layer No. 2) 202 and the strip-shaped formed on the top surface of the eleventh base layer (layer No. 11) 211. The internal electrodes 301d, 303d, and 305d are connected via through-hole electrodes 601 to 608 (not shown) to form a substantially spiral radiating electrode 300. In the chip-type antenna of Example 4, the electrode width of each of the strip-like internal electrodes 302d, 304d, 306d, 308d and 301d, 303d, 305d, 307d, 309d was formed to be 0.3 mm. Further, as can be seen from FIG. 9D, the number of turns of the substantially spiral radiating electrode 300 is four, and the electrode length of the radiating electrode 300 is longer than that of the chip antennas of Examples 1 to 3. did.

  FIG. 10 shows the result of measuring the VSWR with respect to frequency for the chip-type antenna of Example 4. FIG. 10A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 4, and FIG. 10B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 10A and 10B, in the chip type antenna of Example 4, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 1931 MHz. Thus, it was found that the bandwidth where VSWR is 3 or less is secured by a width of about 190 MHz from about 1830 MHz to about 2020 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less were obtained in a wide frequency band of about 190 MHz. However, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is shifted slightly to the low frequency side such that it is about 1931 MHz, and the bandwidth at which the VSWR is 3 or less is about 190 MHz. In addition, a width of about 200 MHz or more could not be secured.

  The chip-type antenna of Example 5 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The band-like internal electrodes formed in the layer No. 2) 202 were each formed in the electrode shape shown in FIG. 9 (e) and arranged at the pitch shown in FIG. That is, in the chip-type antenna of Example 5, strip-shaped internal electrodes 302e, 304e, 306e, and 308e are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 9E, strip-shaped internal electrodes 301e, 303e, 305e, 307e, and 309e are formed. The strip-shaped internal electrodes 307e and 309e are connected to a through-hole electrode (not shown) at the center in the width direction of the eleventh base layer (layer No. 11) 211, and the other strip-shaped internal electrodes 301e, It is the same as that of the chip type antenna of Example 4 that it is formed in substantially half length with respect to 303e and 305e.

  That is, in the chip-type antenna of Example 5, the strip-shaped internal electrodes 307e and 309e formed on the upper surface of the eleventh base layer (layer No. 11) 211 are through-hole electrodes 611 and 612 (see FIG. 2). 2 are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Therefore, the strip-shaped internal electrodes 307e and 309e formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion. Then, the strip-shaped internal electrodes 302e, 304e, 306e, 308e formed on the upper surface of the second base layer (layer No. 2) 202 and the strip-shaped formed on the top surface of the eleventh base layer (layer No. 11) 211. The internal electrodes 301e, 303e, and 305e are connected via through-hole electrodes 601 to 608 (not shown) to constitute a substantially spiral radiating electrode 300. In the chip type antenna of Example 5, the electrode width of each strip-like internal electrode 302e, 304e, 306e, 308e and the electrode width of each strip-like internal electrode 301e, 303e, 305e, 307e, 309e are all 0.5 mm. Formed.

  On the other hand, as shown in FIG. 9 (e), the number of turns of the substantially spiral radiating electrode 300 is four as in the case of the chip-type antenna of the fourth embodiment. Similarly to the chip type antenna, the chip type antennas of Examples 1 to 3 were longer. Therefore, in the chip-type antenna of Example 5, the strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” 2 The shape of the strip-shaped internal electrode disposed on the base layer (layer No. 2) 202 is substantially the same as that of the chip antenna of the fourth embodiment, but the width of each electrode is 5/3 times that of the fourth embodiment. It has become. Therefore, as is apparent from FIGS. 9D and 9E, the band-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the “second layer” The strip-shaped internal electrode disposed on the second base layer (layer No. 2) 202 as the “layer” is the stacking direction A of the base layers 201 to 213 (see FIG. In the chip type antenna of Example 5 shown in FIG. 9 (e), the chip type antenna shown in FIG. 9 (e) is compared with the chip type antenna of Example 4 shown in FIG. 9 (d). The distance between both electrodes is narrower in the projection plane.

  FIG. 11 shows the result of measuring VSWR with respect to frequency for the chip-type antenna of Example 5. FIG. 11A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 5, and FIG. 11B is an enlarged view of the frequency scale on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 11A and 11B, in the chip type antenna of the fifth embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 2044 MHz. Thus, it has been found that the bandwidth where the VSWR is 3 or less is secured by a width of about 212 MHz from about 1916 MHz to about 2136 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less in a wide frequency band substantially corresponding to the target UMTS band can be obtained.

  The chip-type antenna of Example 6 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The band-like internal electrodes formed on the layer No. 2) 202 were each formed in the electrode shape shown in FIG. 9 (f) and arranged at the pitch shown in FIG. That is, in the chip-type antenna of Example 6, strip-shaped internal electrodes 302f, 304f, 306f, and 308f are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 9 (f), strip-shaped internal electrodes 301f, 303f, 305f, 307f, and 309f are formed. The strip-shaped internal electrodes 307f and 309f are connected to a through-hole electrode (not shown) at the center in the width direction of the eleventh base layer (layer No. 11) 211, and the other strip-shaped internal electrodes 301f, It is the same as the chip type antennas of the fourth and fifth embodiments that the length is approximately half that of 303f and 305f.

  That is, in the chip-type antenna of Example 6, the strip-like internal electrodes 307f and 309f formed on the upper surface of the eleventh base layer (layer No. 11) 211 are through-hole electrodes 611 and 612 (see FIG. 2). Are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Accordingly, the strip-shaped internal electrodes 307f and 309f formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion. Then, the strip-shaped internal electrodes 302f, 304f, 306f, and 308f formed on the upper surface of the second base layer (layer No. 2) 202 and the strip-shaped formed on the top surface of the eleventh base layer (layer No. 11) 211. The internal electrodes 301f, 303f, and 305f are connected via through-hole electrodes 601 to 608 (not shown) to form a substantially spiral radiating electrode 300. In the chip-type antenna of Example 6, the electrode width of each strip-like internal electrode 302f, 304f, 306f, 308f and the electrode width of each strip-like internal electrode 301f, 303f, 305f, 307f, 309f are all 0.7 mm. Formed.

  On the other hand, as shown in FIG. 9 (f), the number of turns of the substantially spiral radiating electrode 300 is 4 times as in the case of the chip antennas of Examples 4 and 5, and the electrode length of the radiating electrode 300 is also implemented. Similar to the chip type antennas of Examples 4 and 5, the chip type antennas of Examples 1 to 3 were longer. Therefore, in the chip-type antenna of Example 6, the band-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” 2 The shape of the band-shaped internal electrode disposed on the base layer (layer No. 2) 202 is substantially the same as that of the chip antennas of Examples 4 and 5, but each electrode width is 7/3 times that of Example 4. The width is 7/5 times that of the fifth embodiment. Therefore, as is apparent from FIGS. 9D, 9E and 9F, the strip-shaped internal electrode disposed on the 11th base layer (layer No. 11) 211 as the “first layer” The strip-shaped internal electrode disposed on the second base layer (layer No. 2) 202 as the “second layer” has a plurality of base layers 201 to 213 as in the case of the chip antennas of the fourth and fifth embodiments. Are alternately arranged in the projection plane in the stacking direction A (see FIG. 2), but in the chip antenna of Example 6 shown in FIG. 9 (f), there is no gap between the electrodes in the projection plane. , Some overlap.

  FIG. 12 shows the result of measuring VSWR with respect to frequency for the chip-type antenna of Example 6. FIG. 12A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 6, and FIG. 12B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 12A and 12B, in the chip type antenna of Example 6, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 2103 MHz. Thus, it has been found that the bandwidth where the VSWR is 3 or less is ensured by a width of about 223 MHz from about 1976 MHz to about 2207 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less in a wide frequency band substantially corresponding to the target UMTS band can be obtained.

  FIG. 13 is a diagram showing an electrode configuration of an example of the chip antenna according to the embodiment of the present invention, where (g) is Example 7, (h) is Example 8, (i) is Example 9, and FIG. Each electrode configuration is shown.

  The chip-type antenna of Example 7 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The band-like internal electrodes formed in the layer No. 2) 202 were formed as shown in FIG. That is, in the chip-type antenna of Example 7, strip-shaped internal electrodes 302g, 304g, 306g, and 308g are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 13G, strip-shaped internal electrodes 301g, 303g, 305g, 307g, and 309g are formed. The strip-shaped internal electrodes 307g and 309g are connected to the through-hole electrodes at locations extending up to approximately 2/3 of the eleventh base layer (layer No. 11) 211 in the width direction, respectively. The electrode 301g, 303g, and 305g are formed with a length of about 2/3.

  That is, in the chip-type antenna of Example 7, the strip-like internal electrodes 307g and 309g formed on the upper surface of the eleventh base layer (layer No. 11) 211 are through-hole electrodes 611 and 612 (see FIG. 2). Are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Therefore, the strip-shaped internal electrodes 307g and 309g formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a feed end side electrode and an open end side electrode having a through-hole electrode connecting portion. The strip-shaped internal electrodes 302g, 304g, 306g, and 308g formed on the top surface of the second base layer (layer No. 2) 202 and the strip-shaped internal electrode formed on the top surface of the eleventh base layer (layer No. 11) 211. The internal electrodes 301g, 303g, and 305g are connected via through-hole electrodes 601 to 608 (not shown) to form a substantially spiral radiating electrode 300. In the chip-type antenna of Example 7, the electrode widths of the strip-shaped internal electrodes 302g, 304g, 306g, and 308g and the electrode widths of the strip-shaped internal electrodes 301g, 303g, 305g, 307g, and 309g are all 0.3 mm. Formed. Further, as can be seen from FIG. 13G, the number of turns of the substantially spiral radiating electrode 300 is 4.5, and the electrode length of the radiating electrode 300 is further longer than that of the chip antennas of Examples 4-6. It was long.

  FIG. 14 shows the results of measuring VSWR with respect to frequency for the chip-type antenna of Example 7. FIG. 14A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 7, and FIG. 14B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 14A and 14B, in the chip type antenna of the seventh embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 1910 MHz. It has been found that the bandwidth where VSWR is 3 or less is secured by a width of about 183 MHz from about 1808 MHz to about 1991 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less were obtained in a wide frequency band. However, the bandwidth where VSWR is 3 or less is shifted to a lower frequency side than the frequency band substantially corresponding to the target UMTS band, and the bandwidth where VSWR is 3 or less is about 183 MHz. A width of 200 MHz or more could not be secured.

  The chip-type antenna of Example 8 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The strip-like internal electrodes formed in the layer No. 2) 202 were formed as shown in FIG. That is, in the chip-type antenna of Example 8, strip-shaped internal electrodes 302h, 304h, 306h, and 308h are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 13 (h), strip-like internal electrodes 301h, 303h, 305h, 307h, and 309h are formed. The strip-shaped internal electrodes 307h and 309h are connected to the through-hole electrodes at locations extending up to approximately 2/3 of the eleventh base layer (layer No. 11) 211 in the width direction, respectively. Similar to the chip antenna of the seventh embodiment, the electrodes 301h, 303h, and 305h are formed to have a length of about 2/3.

  That is, in the chip-type antenna of Example 8, the strip-shaped internal electrodes 307h and 309h formed on the upper surface of the eleventh base layer (layer No. 11) 211 have through-hole electrodes 611 and 612, respectively (see FIG. 2). 2 are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Therefore, the strip-shaped internal electrodes 307h and 309h formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion. Then, the strip-shaped internal electrodes 302h, 304h, 306h, 308h formed on the upper surface of the second base layer (layer No. 2) 202 and the strip-shaped internal electrodes formed on the top surface of the eleventh base layer (layer No. 11) 211. The internal electrodes 301h, 303h, and 305h are connected via through-hole electrodes 601 to 608 (not shown) to constitute a substantially spiral radiating electrode 300. In the chip type antenna of Example 8, the electrode width of each strip-like internal electrode 302h, 304h, 306h, 308h and the electrode width of each strip-like internal electrode 301h, 303h, 305h, 307h, 309h are all 0.5 mm. Formed. On the other hand, as shown in FIG. 13 (h), the number of turns of the substantially spiral radiating electrode 300 is 4.5 as in the case of the chip antenna of the seventh embodiment. Similarly to the chip type antenna of Example 7, it was made longer than the chip type antennas of Examples 4-6. Therefore, in the chip-type antenna of Example 8, the strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” 2 The shape of the band-like internal electrode disposed on the base layer (layer No. 2) 202 is substantially the same as that of the chip antenna of the seventh embodiment, but the width of each electrode is 5/3 times that of the seventh embodiment. It has become. Therefore, as is apparent from FIGS. 13G and 13H, the band-shaped internal electrode disposed on the eleventh substrate layer (layer No. 11) 211 as the “first layer” and the “second layer” The strip-shaped internal electrode disposed on the second base layer (layer No. 2) 202 as a “layer” is the stacking direction A (see FIG. In the chip type antenna of Example 8 shown in FIG. 13 (h) as compared with the chip type antenna of Example 7 shown in FIG. The distance between both electrodes is narrower in the projection plane.

  FIG. 15 shows the result of measuring the VSWR with respect to frequency for the chip-type antenna of Example 8. FIG. 15A is a graph showing the relationship between VSWR and frequency of the chip-type antenna of Example 8, and FIG. 15B is an enlarged scale of frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 15A and 15B, in the chip type antenna of the eighth embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 2022 MHz. Thus, it was found that the bandwidth where the VSWR is 3 or less is secured by the width of about 213 MHz from about 1898 MHz to about 2111 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less were obtained in a wide frequency band. Further, it was found that the bandwidth where VSWR is 3 or less is a frequency band substantially corresponding to the target UMTS band.

  The chip-type antenna of Example 9 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The strip-like internal electrodes formed in the layer No. 2) 202 were formed as shown in FIG. That is, in the chip-type antenna of Example 9, strip-shaped internal electrodes 302i, 304i, 306i, and 308i are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, on the upper surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. 13 (i), strip-shaped internal electrodes 301i, 303i, 305i, 307i, and 309i are formed. The strip-shaped internal electrodes 307i and 309i are connected to the through-hole electrodes at locations extending to about 2/3 of the eleventh base layer (layer No. 11) 211 in the width direction, respectively. Similar to the chip type antennas of the seventh and eighth embodiments, the electrodes 301i, 303i, and 305i are formed to have a length of about 2/3.

  That is, in the chip antenna of Example 9, the strip-shaped internal electrodes 307i and 309i formed on the upper surface of the eleventh base layer (layer No. 11) 211 are also formed as through-hole electrodes 611 and 612 (see FIG. 2). 2 are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Accordingly, the strip-shaped internal electrodes 307i and 309i formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion. Then, the strip-shaped internal electrodes 302i, 304i, 306i, 308i formed on the upper surface of the second base layer (layer No. 2) 202 and the strip-shaped formed on the top surface of the eleventh base layer (layer No. 11) 211. The internal electrodes 301i, 303i, and 305i are connected via through-hole electrodes 601 to 608 (not shown) to form a substantially spiral radiating electrode 300. In the chip-type antenna of Example 9, the electrode width of each strip-like internal electrode 302i, 304i, 306i, 308i and the electrode width of each strip-like internal electrode 301i, 303i, 305i, 307i, 309i are all 0.7 mm. Formed. On the other hand, as shown in FIG. 13 (i), the number of turns of the substantially spiral radiating electrode 300 is 4.5 as in the case of the chip antennas of Examples 7 and 8, and the electrode length of the radiating electrode 300 is also set. Similarly to the chip type antennas of Examples 7 and 8, the chip type antennas of Examples 4 to 6 were made longer. Therefore, in the chip-type antenna of Example 9, the strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” 2 The shape of the strip-shaped internal electrode disposed on the base layer (layer No. 2) 202 is substantially the same as that of the chip antennas of Examples 7 and 8, but each electrode width is 7/3 times that of Example 7. This is 7/5 times as wide as that of the eighth embodiment. Therefore, as is apparent from FIGS. 13 (g), (h) and (i), a strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” The strip-shaped internal electrode disposed on the second base layer (layer No. 2) 202 as the “second layer” has a plurality of base layers 201 to 213 as in the chip antennas of the seventh and eighth embodiments. Are alternately arranged in the projection plane in the stacking direction A (see FIG. 2), but in the chip-type antenna of Example 9 shown in FIG. 13 (i), the distance between the two electrodes is eliminated in the projection plane. , Some overlap.

  FIG. 16 shows the result of measuring VSWR with respect to frequency for the chip-type antenna of Example 9. FIG. 16A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 9, and FIG. 16B is an enlarged view of the frequency scale on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 16A and 16B, in the chip type antenna of the ninth embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 2074 MHz. Thus, it has been found that the bandwidth where the VSWR is 3 or less is secured by the width of about 225 MHz from about 1947 MHz to about 2178 MHz. Therefore, it was confirmed that good radiation characteristics with a VSWR of 3 or less were obtained in a wide frequency band. Further, it was found that the bandwidth where VSWR is 3 or less is a frequency band substantially corresponding to the target UMTS band.

  FIG. 17 is a diagram showing an electrode configuration of an example of the chip antenna according to the embodiment of the present invention, where (j) is Example 10, (k) is Example 11, (l) is Example 12, and FIG. Each electrode configuration is shown.

  The chip-type antenna of Example 10 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The strip-like internal electrodes formed in the layer No. 2) 202 were formed as shown in FIG. That is, in the chip-type antenna of Example 10, strip-shaped internal electrodes 302j, 304j, 306j, 308j, 310j, and 312j are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, on the top surface of the eleventh base layer (layer No. 11) 211, as shown in FIG. . The strip-shaped internal electrodes 311j and 313j are connected to the through-hole electrodes at locations extending to approximately 2/3 of the eleventh base layer (layer No. 11) 211 in the width direction, and other strip-shaped internal electrodes The electrodes 301j, 303j, 305j, 307j, and 309j are formed to have a length of about 2/3.

  That is, in the chip-type antenna of Example 10, the strip-like internal electrodes 311j and 313j formed on the upper surface of the eleventh base layer (layer No. 11) 211 are through-hole electrodes 611 and 612 (see FIG. 2). Are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Accordingly, the strip-like internal electrodes 311j and 313j formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion. Then, the strip-shaped internal electrodes 302j, 304j, 306j, 308j, 310j, 312j formed on the upper surface of the second base layer (layer No. 2) 202 and the upper surface of the eleventh base layer (layer No. 11) 211 are formed. The strip-shaped internal electrodes 301j, 303j, 305j, 307j, 309j, 311j, and 313j are connected via through-hole electrodes 601 to 612 (not shown) to form a substantially spiral-shaped radiation electrode 300. is doing. In the chip type antenna of the tenth embodiment, the electrode width of each strip-shaped internal electrode 302j, 304j, 306j, 308j, 310j, 312j and the electrode of each strip-shaped internal electrode 301j, 303j, 305j, 307j, 309j, 311j, 313j The width was 0.3 mm in all cases. Further, as can be seen from FIG. 17 (j), the number of turns of the substantially spiral radiating electrode 300 is 6.5, and the electrode length of the radiating electrode 300 is further longer than the chip antennas of Examples 7-9. It was long.

  FIG. 18 shows the result of measuring VSWR with respect to frequency for the chip-type antenna of Example 10. FIG. 18A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 10, and FIG. 18B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 18A and 18B, in the chip type antenna of the tenth embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 1590 MHz. Thus, it was found that the bandwidth where the VSWR is 3 or less is secured by about 150 MHz from about 1500 MHz to about 1610 MHz. Therefore, it was found that the bandwidth where VSWR is 3 or less is larger than the frequency band substantially corresponding to the target UMTS band and is shifted to the low frequency side. In addition, the bandwidth for obtaining good radiation characteristics with a VSWR of 3 or less is narrower than the chip antennas of Examples 1 to 9 described above, and a width of about 200 MHz or more is about 150 MHz. Could not secure.

  The chip-type antenna of Example 11 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The band-like internal electrodes formed in the layer No. 2) 202 were formed as shown in FIG. That is, in the chip antenna of Example 11, strip-shaped internal electrodes 302k, 304k, 306k, 308k, and 310k are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, as shown in FIG. 17 (k), strip-shaped internal electrodes 301k, 303k, 305k, 307k, 309k, 311k are formed on the upper surface of the eleventh base layer (layer No. 11) 211. The strip-shaped internal electrodes 309k and 311k are connected to the through-hole electrodes at locations extending to approximately 2/3 of the eleventh base layer (layer No. 11) 211 in the width direction, and other strip-shaped internal electrodes Similar to the chip antenna of the tenth embodiment, the electrodes 301k, 303k, 305k, and 307k are formed to have a length of about 2/3.

  That is, in the chip antenna of Example 11, the strip-like internal electrodes 309k and 311k formed on the upper surface of the eleventh base layer (layer No. 11) 211 are through-hole electrodes 611 and 612, respectively (see FIG. 2). Are connected to the power supply end side terminal 400 and the open end side terminal 500 shown in FIGS. Therefore, the strip-shaped internal electrodes 309k and 311k formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitute a power supply end side electrode and an open end side electrode having a through-hole electrode connecting portion. Then, the strip-shaped internal electrodes 302k, 304k, 306k, 308k, 310k formed on the upper surface of the second base layer (layer No. 2) 202 and the upper surface of the eleventh base layer (layer No. 11) 211 were formed. The strip-shaped internal electrodes 301k, 303k, 305k, 307k, 309k, and 311k are connected via through-hole electrodes 601 to 610 (not shown), thereby forming a substantially spiral radiating electrode 300. In the chip type antenna of Example 11, the electrode width of each strip-shaped internal electrode 302k, 304k, 306k, 308k, 310k and the electrode width of each strip-shaped internal electrode 301k, 303k, 305k, 307k, 309k, 311k Was also formed to 0.5 mm. On the other hand, the number of turns of the substantially spiral radiating electrode 300 is 5.5 as shown in FIG. 17 (k), and the electrode length of the radiating electrode 300 is shorter than that of the chip antenna of the tenth embodiment. Further, the antenna was longer than the chip antennas of Examples 7-9. Therefore, in the chip-type antenna of Example 11, the strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” The shape of the strip-shaped internal electrodes disposed on the two base layers (layer No. 2) 202 is substantially the same as that of the chip antenna of Example 10, but the width of each electrode is 5/3 times as wide. Since the number of windings described above is as large as 5.5 (the number of strip-like internal electrodes is large), as is apparent from FIG. 17 (k), the eleventh substrate layer (the “first layer”) The strip-shaped internal electrode disposed in the layer No. 11) 211 and the strip-shaped internal electrode disposed in the second base layer (layer No. 2) 202 as the “second layer” Similarly to the chip antenna, the chip antennas of Example 11 shown in FIG. 17 (k) are alternately arranged in the projection plane in the stacking direction A (see FIG. 2) of the plurality of base layers 201-213. Then, there is no gap between the electrodes in the projection plane.

  FIG. 19 shows the result of measuring VSWR with respect to frequency for the chip-type antenna of Example 11. FIG. 19A is a graph showing the relationship between the VSWR and the frequency of the chip antenna of Example 11, and FIG. 19B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 19A and 19B, in the chip type antenna of the eleventh embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 1799 MHz. Thus, it has been found that the bandwidth where the VSWR is 3 or less is secured by the width of about 145 MHz from about 1708 MHz to about 1857 MHz. Therefore, it was found that the bandwidth where VSWR is 3 or less is larger than the frequency band substantially corresponding to the target UMTS band and is shifted to the low frequency side. Further, the bandwidth for obtaining a good radiation characteristic with VSWR of 3 or less is narrower than the chip antennas of Examples 1 to 9 described above, and a width of about 200 MHz or more is about 145 MHz. Could not secure.

  The chip-type antenna of Example 12 includes a strip-shaped internal electrode formed on an eleventh base layer (layer No. 11) 211 as a “first layer” and a second base layer (as a “second layer”). The strip-like internal electrodes formed in the layer No. 2) 202 were formed as shown in FIG. That is, in the chip-type antenna of Example 12, strip-shaped internal electrodes 302l, 304l, 306l, 308l, 310l, 312l are formed on the upper surface of the second base layer (layer No. 2) 202. On the other hand, as shown in FIG. 17 (l), strip-shaped internal electrodes 301l, 303l, 305l, 307l, 309l, 311l are formed on the upper surface of the eleventh base layer (layer No. 11) 211. The strip-shaped internal electrode 312l is connected to the through-hole electrode at a portion extending to about 1/3 of the width direction of the second base layer (layer No. 2) 202, and the other strip-shaped internal electrode 302l, The length is approximately 1/3 of 304l, 306l, 308l, 310l. On the other hand, the strip-shaped internal electrode 311l is connected to the through-hole electrode at a portion extending to about 2/3 of the eleventh base layer (layer No. 11) 211 in the width direction, and the other strip-shaped internal electrode 301l, The length is approximately 2/3 of 303l, 305l, 307l, and 309l.

  That is, in the chip-type antenna of Example 12, the band-shaped internal electrode 311l formed on the upper surface of the eleventh base layer (layer No. 11) 211 is formed through the through-hole electrode 611 (see FIG. 2) as shown in FIG. 3 and a belt-like internal electrode 312l disposed on the upper surface of the second base layer (layer No. 2) 202 is connected to the power supply terminal 400 shown in FIG. ) To the open end side terminal 500 shown in FIGS. 2 and 3. Accordingly, the band-shaped internal electrode 311l formed on the upper surface of the eleventh base layer (layer No. 11) 211 constitutes a feeding end side electrode having a through-hole electrode connection portion, while the second base layer (layer No. 2). ) The strip-shaped internal electrode 3121 disposed on the upper surface of 202 constitutes an open end side electrode having a through-hole electrode connecting portion. In FIG. 2, both the feed end side electrode and the open end side electrode are formed on the upper surface of the eleventh base layer (layer No. 11) 211. However, in the chip antenna of Example 12, the open end side electrode The electrode is formed on the upper surface of the second base layer (layer No. 2) 202. Then, it is formed on the upper surfaces of the strip-shaped internal electrodes 302l, 304l, 306l, 308l, 310l, 312l and the eleventh substrate layer (layer No. 11) 211 formed on the upper surface of the second substrate layer (layer No. 2) 202. The strip-shaped internal electrodes 301l, 303l, 305l, 307l, 309l, and 311l are connected via through-hole electrodes 601 to 610 (not shown) to form a substantially spiral radiating electrode 300. Yes. In the chip-type antenna of Example 12, the electrode width of each strip-shaped internal electrode 302l, 304l, 306l, 308l, 310l, 312l and the electrode width of each strip-shaped internal electrode 301l, 303l, 305l, 307l, 309l, 311l are , Both were formed to 0.7 mm. On the other hand, as shown in FIG. 17L, the number of turns of the substantially spiral radiating electrode 300 is 5.5, and the electrode length of the radiating electrode 300 is also larger than that of the chip antennas of Examples 7-9. It was even longer. Therefore, in the chip-type antenna of Example 12, the band-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” and the second as the “second layer” 2 The shape of the strip-shaped internal electrode disposed on the base layer (layer No. 2) 202 is substantially the same as that of the chip antennas of Examples 10 and 11, but each electrode width is 7/3 times that of Example 10. This is 7/5 times as large as that of Example 11. Therefore, as is apparent from FIGS. 17 (j), (k), and (l), the strip-shaped internal electrode disposed on the eleventh base layer (layer No. 11) 211 as the “first layer” The strip-shaped internal electrode disposed on the second base layer (layer No. 2) 202 as the “second layer” has a plurality of base layers 201 to 213 as in the case of the chip antennas of Examples 10 and 11. Are alternately arranged in the projection plane in the stacking direction A (see FIG. 2), but in the chip antenna of Example 12 shown in FIG. 17 (l), there is no gap between the electrodes in the projection plane. , Some overlap.

  FIG. 20 shows the result of measuring VSWR with respect to frequency for the chip-type antenna of Example 12. FIG. 20A is a graph showing the relationship between the VSWR and the frequency of the chip-type antenna of Example 12, and FIG. 20B is an enlarged scale of the frequency on the horizontal axis. VSWR is a value representing the degree of reflection of the transmission power sent to the antenna, and the smaller the value of VSWR on the vertical axis (close to 1), the less reflected the transmitted power is efficiently transmitted to the antenna. The value of VSWR is shown in a certain frequency band as shown in FIG.

  From the analysis results of the graphs shown in FIGS. 20A and 20B, in the chip antenna of the twelfth embodiment, the frequency at which the VSWR is minimum (the curve of the graph is closest to 1) is about 1762 MHz. Thus, it has been found that the bandwidth where the VSWR is 3 or less is secured by the width of about 147 MHz from about 1673 MHz to about 1821 MHz. Therefore, it was found that the bandwidth where VSWR is 3 or less is larger than the frequency band substantially corresponding to the target UMTS band and is shifted to the low frequency side. Further, the bandwidth for obtaining good radiation characteristics with VSWR of 3 or less is narrower than that of the chip antennas of Examples 1 to 9 described above, and a width of about 200 MHz or more is about 147 MHz. Could not secure.

  FIG. 21 is a table showing the measurement results of Examples 1 to 12 described above of the chip antenna according to the embodiment of the present invention. In FIG. 21, fo indicates a frequency at which VSWR becomes the minimum value. The bandwidth indicates a frequency range where VSWR <3. In the table of FIG. 21, the hatched range indicates a result that substantially satisfies the characteristics.

  As is clear from FIG. 21, fo became lower with an increase in the number of turns at any electrode width, and the bandwidth tended to decrease substantially. It is understood that this is because the bandwidth is narrowed because the spacing between adjacent electrodes is narrowed by increasing the number of turns and the coupling capacitance is increased. Further, when compared with the same number of turns, the larger the electrode width, the higher the approximate fo, and the wider the bandwidth. It is understood that this is because the electrode length becomes shorter when the electrode width is larger. In particular, the structure satisfying both fo and bandwidth had an electrode width of 0.5 mm and a winding number of 4.0 or 4.5. On the other hand, if the electrode width was 0.3 mm, good characteristics were obtained with 3 turns, and if the electrode width was 0.7 mm, good characteristics were obtained with 4.5 turns.

  22A and 22B are diagrams for explaining an inspection / adjustment method after the chip-type antenna according to the embodiment of the present invention is mounted on a mounting substrate. FIG. 22A is a continuity inspection method, and FIG. 22B is a center frequency thereof. The adjustment method is shown. As described above, the feeding end side terminal 400 and the open end side terminal 500 are formed on the mounting surface of the chip antenna. Therefore, a continuity inspection device 800 for performing a continuity inspection of the radiation electrode 300 formed in the base body 200 is connected to the power supply end side terminal 400 and the open end side terminal 500. The open end side terminal 500 is connected to an extension electrode for frequency adjustment.

  That is, in the chip type antenna according to the embodiment of the present invention, since the feed end side terminal 400 and the open end side terminal 500 are formed on the mounting surface of the chip type antenna, the board 810 is connected to the feed end side terminal 400. The feed line 812 and the conductive pad 814 connected to the open end side terminal 500 are formed, and the chip type antenna is connected to the feed line 812 and the conductive pad 814, respectively. As shown in FIG. 22A, for example, by connecting tester probes 816 and 818 to the feed line 812 and the conductive pad 814, respectively, the continuity test of the chip antenna can be easily performed. Can do.

  In the chip antenna according to the embodiment of the present invention, since the open end side terminal 500 is formed on the mounting surface of the chip type antenna, the open end side terminal 500 is provided on the substrate 810 as shown in FIG. The center frequency of the chip antenna can be easily adjusted by forming the extension electrode (frequency adjusting conductor pattern) 820 connected to the antenna.

  As described above, the chip-type antenna of the present invention has a plurality of strip-like internal electrodes on the first layer and the second layer among the plurality of layers constituting the substrate made of at least one of a dielectric material and a magnetic material. Are arranged alternately on the projection plane in the stacking direction at a predetermined pitch, and are connected in series by through-hole electrodes to form a substantially spiral radiating electrode, and the width of the band-like internal electrodes is 0 .3 mm to 0.7 mm.

  With this configuration, it is possible to further reduce the size of the chip-type antenna as compared with the related art and to obtain excellent radiation characteristics within a wide transmission / reception frequency band. Also. Since the number of turns of the substantially spiral radiating electrode is not less than 3 and not more than 4.5, the radiating electrode is formed with a relatively small number of turns, so that further miniaturization of the chip antenna is facilitated. Further, since the distance between the internal electrode of the first layer and the internal electrode of the second layer is 450 μm to 1000 μm, the internal electrode of the first layer and the internal electrode of the second layer in the substrate Since it is within the interval of 450 μm to 1000 μm, the chip antenna can be sufficiently downsized.

  Furthermore, since the frequency at which the VSWR is minimum is in the range of 1500 MHz to 2500 MHz and the bandwidth at which the VSWR is 3 or less is 200 MHz or more, the radiation is particularly effective within a wide transmission / reception frequency band that is practically effective for the WCDMA communication system. A chip antenna having excellent characteristics can be realized.

  In the chip-type antenna of the present invention, the first layer strip-shaped internal electrodes and the second layer strip-shaped internal electrodes constituting the radiation electrode in the substrate are alternately arranged in the projection plane in the stacking direction. Therefore, since the substantially spiral radiation electrode in the substrate is formed with symmetry, it is difficult for the laminate to warp in the process of manufacturing the chip antenna. As a result, sitting when the chip antenna is mounted on an internal substrate of a mobile phone or the like is improved, and mounting stability is improved. Further, on the lower surface (back surface) of the twelfth base layer (layer No. 12) 212 constituting the mounting surface of the chip type antenna, as shown in FIGS. 2 and 3, the feeding end side terminal 400 and the open end side terminal are provided. Reinforcing terminals 701 to 712 are formed apart from 500. These reinforcing terminals 701 to 712 are not terminals for electrical connection, but are terminals for increasing the adhesive strength in order to prevent the mounting surface of the chip type antenna 100 from being peeled off from the substrate or the like. Therefore, it is formed along the peripheral side of the lower surface (back surface) of the twelfth base layer (layer No. 12) 212, excluding the portion where the power supply end side terminal 400 and the open end side terminal 500 are formed. It is formed at equal intervals at the end in the width direction. This configuration also improves the sitting stability when the chip antenna is mounted on an internal substrate such as a mobile phone, and improves the mounting stability.

1 is a perspective view of a chip antenna according to an embodiment of the present invention. It is a disassembled perspective view of the chip-type antenna of FIG. It is a figure which shows the structure of the electrode pattern (The pattern of a radiation electrode, the pattern of a through-hole electrode, the pattern of a back surface electrode) in each of several layers of the chip-type antenna of FIG. Of the plurality of layers shown in FIGS. 2 and 3, the second base layer (layer No. 2) 202 and the eleventh base layer (layer No. 11) 211 in which the strip-like internal electrodes are disposed are shown in an enlarged manner. 4A is an enlarged view of the second base layer (layer No. 2) 202, and FIG. 4B is an enlarged view of the eleventh base layer (layer No. 11) 211. FIG. It is a figure which shows the electrode structure of the Example of the chip-type antenna which concerns on embodiment of this invention, (a) is Example 1, (b) is Example 2, (c) is the electrode structure of Example 3. FIG. Each is shown. It is a graph showing the relationship between VSWR and frequency of Example 1 of the chip-type antenna according to the embodiment of the present invention. It is a graph showing the relationship between VSWR and Example 2 of Example 2 of the chip-type antenna which concerns on embodiment of this invention. It is a graph showing the relationship between VSWR and Example 3 of Example 3 of the chip-type antenna according to the embodiment of the present invention. It is a figure which shows the electrode structure of the Example of the chip-type antenna which concerns on embodiment of this invention, (d) is Example 4, (e) is Example 5, (f) is the electrode structure of Example 6. FIG. Each is shown. It is a graph showing the relationship between the VSWR and the frequency of Example 4 of the chip-type antenna according to the embodiment of the present invention. It is a graph showing the relationship between VSWR and Example 5 of the chip type antenna according to the embodiment of the present invention. It is a graph showing the relationship between VSWR and Example 6 of the chip-type antenna according to the embodiment of the present invention. It is a figure which shows the electrode structure of the Example of the chip-type antenna which concerns on embodiment of this invention, (g) is Example 7, (h) is Example 8, (i) is the electrode structure of Example 9, and FIG. Shown respectively. It is a graph showing the relationship between VSWR of Example 7 of the chip-type antenna which concerns on embodiment of this invention, and a frequency. It is a graph showing the relationship between VSWR and Example 8 of Example 8 of the chip-type antenna which concerns on embodiment of this invention. It is a graph showing the relationship between VSWR and Example 9 of the chip-type antenna according to the embodiment of the present invention. It is a figure which shows the electrode structure of the Example of the chip-type antenna which concerns on embodiment of this invention, (j) is Example 10, (k) is Example 11, (l) is the electrode structure of Example 12, and FIG. Each is shown. It is a graph showing the relationship between VSWR and Example 10 of the chip-type antenna according to the embodiment of the present invention. It is a graph showing the relationship between VSWR and Example 11 of the chip-type antenna according to the embodiment of the present invention. It is a graph showing the relationship between VSWR of Example 12 of the chip-type antenna which concerns on embodiment of this invention, and a frequency. It is a table | surface which shows the measurement result of Examples 1-12 of the chip-type antenna which concerns on embodiment of this invention. It is a figure for demonstrating the test | inspection and adjustment method after mounting the chip-type antenna of FIG. 1 on a mounting board | substrate, (a) shows the continuity test method, (b) shows the adjustment method of the center frequency.

Explanation of symbols

100 chip antenna, 201-212 base layer,
200 substrate, 301 to 311 strip-shaped internal electrode, 300 radiation electrode,
400 power supply end side terminal, 500 open end side terminal, A stacking direction,
601-612 Through-hole electrode

Claims (4)

A substrate configured by laminating a plurality of layers made of at least one of a dielectric material and a magnetic material; a radiation electrode composed of an internal electrode formed in a predetermined layer of the plurality of layers; and In a chip-type antenna including one end connected and a feeding end side terminal formed on the surface of the base, and an open end side terminal connected to the other end of the radiation electrode and formed on the surface of the base.
Among the plurality of layers, the first layer and the second layer are provided with a plurality of strip-like internal electrodes at a predetermined pitch, and the strip-like internal electrodes of the first layer and the second layer The strip-shaped internal electrodes of the layers are arranged alternately in the projection plane in the stacking direction and are connected in series by through-hole electrodes so that the winding axis is in a direction perpendicular to the stacking direction. A chip antenna comprising a spiral radiating electrode, wherein the width of the band-like internal electrode is 0.3 mm to 0.7 mm.   2. The chip antenna according to claim 1, wherein the number of turns of the substantially spiral radiation electrode is 3 or more and 4.5 or less.   3. The chip antenna according to claim 1, wherein a distance between the internal electrode of the first layer and the internal electrode of the second layer is 450 μm to 1000 μm.   4. The chip-type antenna according to claim 1, wherein a frequency at which VSWR is minimized is in a range of 1500 MHz to 2500 MHz, and a bandwidth at which VSWR is 3 or less is 200 MHz or more. Type antenna.

Images