JP2008047780A5 - - Google Patents
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- Publication number
- JP2008047780A5 JP2008047780A5 JP2006223534A JP2006223534A JP2008047780A5 JP 2008047780 A5 JP2008047780 A5 JP 2008047780A5 JP 2006223534 A JP2006223534 A JP 2006223534A JP 2006223534 A JP2006223534 A JP 2006223534A JP 2008047780 A5 JP2008047780 A5 JP 2008047780A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- thin film
- film transistor
- microlens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 8
- 239000011229 interlayer Substances 0.000 claims 7
- 239000010409 thin film Substances 0.000 claims 7
- 239000010410 layer Substances 0.000 claims 5
- 239000007788 liquid Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 230000001678 irradiating Effects 0.000 claims 1
- 230000031700 light absorption Effects 0.000 claims 1
- 239000011344 liquid material Substances 0.000 claims 1
- 230000002940 repellent Effects 0.000 claims 1
- 239000005871 repellent Substances 0.000 claims 1
Claims (4)
前記薄膜トランジスタ上に層間絶縁膜を形成し、
前記層間絶縁膜上に液滴吐出法によりレンズ材料となる液状物質を着弾させ、
着弾した前記液状物質を硬化させることによってマイクロレンズを形成し、
前記マイクロレンズにレーザ光を照射し、前記薄膜トランジスタの絶縁膜に前記レーザ光を集光することによって、前記絶縁膜および前記層間絶縁膜の一部を除去して、前記薄膜トランジスタの半導体層を露呈する開口部を形成することを特徴とする半導体装置の作製方法。 A thin film transistor formed on a substrate,
Forming an interlayer insulating film on the thin film transistor,
A liquid substance that becomes a lens material is landed on the interlayer insulating film by a droplet discharge method,
It landed the liquid material to form the microlens by Rukoto curing the,
A laser beam is irradiated prior Symbol microlens, I'll to focus the laser beam to the insulating film of the thin film transistor, by removing a portion of the insulating film and the interlayer insulating film, the TFT semiconductor A manufacturing method of a semiconductor device, wherein an opening for exposing a layer is formed.
前記層間絶縁膜上に、液滴吐出法によりレンズ材料となる液状物質を着弾させる前に、
前記層間絶縁膜表面に、撥液処理を施すことを特徴とする半導体装置の作製方法。 Oite to claim 1,
Before landing a liquid substance that becomes a lens material on the interlayer insulating film by a droplet discharge method,
A method for manufacturing a semiconductor device, wherein a liquid repellent treatment is performed on a surface of the interlayer insulating film .
前記半導体層上に、前記絶縁膜を形成する前に、Before forming the insulating film on the semiconductor layer,
前記半導体層上の前記開口部を形成する領域に、前記レーザ光の波長に吸収性を有する材料を含む光吸収層を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: forming a light absorption layer including a material having an absorptivity for a wavelength of the laser light in a region where the opening is formed on the semiconductor layer.
前記薄膜トランジスタ上に層間絶縁膜を形成し、Forming an interlayer insulating film on the thin film transistor;
前記基板裏面に液滴吐出法によりレンズ材料となる液状物質を着弾させ、A liquid substance that becomes a lens material is landed on the back surface of the substrate by a droplet discharge method,
着弾した前記液状物質を硬化させることによってマイクロレンズを形成し、A microlens is formed by curing the landed liquid substance,
前記マイクロレンズにレーザ光を照射し、前記薄膜トランジスタの絶縁膜に前記レーザ光を集光することによって、前記絶縁膜および前記層間絶縁膜の一部を除去して、前記薄膜トランジスタの半導体層を露呈する開口部を形成することを特徴とする半導体装置の作製方法。By irradiating the microlens with laser light and condensing the laser light on the insulating film of the thin film transistor, a part of the insulating film and the interlayer insulating film is removed to expose the semiconductor layer of the thin film transistor. A manufacturing method of a semiconductor device, wherein an opening is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006223534A JP4969177B2 (en) | 2006-08-18 | 2006-08-18 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006223534A JP4969177B2 (en) | 2006-08-18 | 2006-08-18 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008047780A JP2008047780A (en) | 2008-02-28 |
| JP2008047780A5 true JP2008047780A5 (en) | 2009-09-17 |
| JP4969177B2 JP4969177B2 (en) | 2012-07-04 |
Family
ID=39181202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006223534A Expired - Fee Related JP4969177B2 (en) | 2006-08-18 | 2006-08-18 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4969177B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2755223B2 (en) * | 1995-09-20 | 1998-05-20 | 日本電気株式会社 | Via hole forming method and apparatus |
| JP4932173B2 (en) * | 2004-03-25 | 2012-05-16 | 株式会社半導体エネルギー研究所 | Method for forming a film pattern |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
-
2006
- 2006-08-18 JP JP2006223534A patent/JP4969177B2/en not_active Expired - Fee Related
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