JP2008047525A - イオン注入中にウエハ温度を一時的に低下させる方法 - Google Patents
イオン注入中にウエハ温度を一時的に低下させる方法 Download PDFInfo
- Publication number
- JP2008047525A JP2008047525A JP2007195980A JP2007195980A JP2008047525A JP 2008047525 A JP2008047525 A JP 2008047525A JP 2007195980 A JP2007195980 A JP 2007195980A JP 2007195980 A JP2007195980 A JP 2007195980A JP 2008047525 A JP2008047525 A JP 2008047525A
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- Prior art keywords
- workpiece
- ion beam
- scan
- ion
- ion implantation
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims description 29
- 230000007246 mechanism Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000012636 effector Substances 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 25
- 230000008569 process Effects 0.000 description 15
- 238000013519 translation Methods 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83393806P | 2006-07-28 | 2006-07-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008047525A true JP2008047525A (ja) | 2008-02-28 |
| JP2008047525A5 JP2008047525A5 (https=) | 2010-09-09 |
Family
ID=39181027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007195980A Pending JP2008047525A (ja) | 2006-07-28 | 2007-07-27 | イオン注入中にウエハ温度を一時的に低下させる方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008047525A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150102934A (ko) * | 2012-08-31 | 2015-09-09 | 액셀리스 테크놀러지스, 인크. | 이온 주입시 주입-유발 손상 제어 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001312990A (ja) * | 2000-04-19 | 2001-11-09 | Applied Materials Inc | イオン注入におけるワークピースの加熱低減装置及び方法 |
| WO2006060124A2 (en) * | 2004-11-30 | 2006-06-08 | Axcelis Technologies, Inc. | Optimization of beam utilization |
-
2007
- 2007-07-27 JP JP2007195980A patent/JP2008047525A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001312990A (ja) * | 2000-04-19 | 2001-11-09 | Applied Materials Inc | イオン注入におけるワークピースの加熱低減装置及び方法 |
| WO2006060124A2 (en) * | 2004-11-30 | 2006-06-08 | Axcelis Technologies, Inc. | Optimization of beam utilization |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150102934A (ko) * | 2012-08-31 | 2015-09-09 | 액셀리스 테크놀러지스, 인크. | 이온 주입시 주입-유발 손상 제어 |
| JP2015533012A (ja) * | 2012-08-31 | 2015-11-16 | アクセリス テクノロジーズ， インコーポレイテッド | イオン注入における注入に誘導される損傷制御 |
| KR102178296B1 (ko) * | 2012-08-31 | 2020-11-12 | 액셀리스 테크놀러지스, 인크. | 이온 주입시 주입-유발 손상 제어 |
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