JP2008041318A - Device for generating direct current high voltage - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device for generating direct current high voltage in which size reduction is realized by obtaining a structure of securing insulating withstand voltage and effectively utilizing space in the device. <P>SOLUTION: In the device for generating direct current high voltage, in which a booster circuit is constituted by arranging a capacitor and a diode on an insulating substrate and which is equipped with a multistage voltage doubler rectifying circuit 1, in which the insulating substrates 20 of the booster circuit are piled in a plurality of numbers stepwise, the size of the insulating substrates 20 of the booster circuit, constituting the multistage voltage doubler rectifying circuit 1, is made to be different according to the stages, and a high voltage output stage is constituted of the insulating substrate 20 smaller than that at a low-voltage output stage. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a direct current high voltage generator used for accelerating an electron beam with an electron gun, an ion beam generator, an electron microscope or the like.

  In a DC high voltage generator used for accelerating an electron beam with an electron gun, an ion beam generator, an electron microscope, etc., a multi-stage voltage doubler rectifier circuit is used as a circuit for converting an AC voltage into a DC high voltage. As a typical multistage voltage doubler rectifier circuit, a Cockcroft-Walton circuit (hereinafter abbreviated as CW circuit) is known.

  Depending on the circuit configuration, the CW circuit is a single type that is a normal CW circuit, a symmetrical type that combines two of them, or a balanced type that is symmetrically connected on both the DC side and the AC side, and There are various configurations such as a single type, an inverse type in which the first AC capacitor and diode are omitted in a symmetrical type, and a circuit called a symmetrical inverse type.

  A symmetric CW circuit has a feature that a voltage drop and a ripple are smaller than those of a single CW circuit, and is often used when a large current capacity is required. Further, the inverse CW circuit has a feature that the output voltage is slightly lowered because the number of AC column capacitors is small, but the voltage drop under load is small. These circuit systems are usually selected according to the application.

  By the way, as a conventional DC high voltage generator using this CW circuit, for example, each voltage doubler booster circuit composed of a capacitor and a diode is arranged on an insulating substrate having the same shape, and a plurality of stages are stacked to constitute a CW circuit. In some cases, by molding with a flexible insulating resin, the occurrence of discharge in the CW circuit is prevented, and the distance between the insulating substrates is shortened to reduce the size of the device (for example, Patent Document 1). reference).

  Further, as another conventional DC high-voltage generator, a conductive shield member for shielding the electric circuit components used in the high-voltage generator from discharges outside or inside the high-voltage generator is provided between the electric circuit components. By providing them, even if a discharge occurs between the electrical circuit components used in the high-voltage generator, direct discharge to the electrical circuit components is avoided, and damage to the electrical circuit components and burnout are avoided. In some cases, the insulation space is reduced to achieve downsizing (see, for example, Patent Document 2).

Japanese Patent Laid-Open No. 7-312300 (Summary column, FIG. 1) JP 2005-228494 A (summary column, FIG. 2)

  However, since the DC high-voltage generator disclosed in Patent Document 1 has the same shape of the insulating substrate at each stage, it is necessary to consider the voltage of the highest voltage high-voltage part for insulation from the outer peripheral container. Therefore, the low-pressure part has an excessive withstand voltage, which is disadvantageous for downsizing of the apparatus. In addition, the entire high-voltage circuit and the entire electric circuit components arranged at each stage are integrally formed with a resin molding material, which increases the weight of the entire apparatus.

  Further, the DC high voltage generator disclosed in Patent Document 2 is intended to avoid direct discharge to electrical circuit components and avoid damage and burnout of electrical circuit components, but completely prevent discharge. In addition, since the output impedance of the entire CW circuit is higher than that of a general power supply device, if a discharge occurs in the CW circuit, an excessive ripple voltage is generated in the output voltage if the charge amount is large. There is a problem that occurs. On the other hand, if the distance between the electric circuit components or the distance between the electric circuit components and the outer peripheral container is increased, the insulation effect is increased and the discharge is reduced.

  The present invention was made to solve the above-mentioned problems of the prior art, and obtained a structure that ensures a dielectric breakdown voltage and that effectively utilizes the space in the device, and thus the device scale of the DC high-voltage generator is small. The purpose is to realize the system.

  A DC high voltage generator according to the present invention comprises a multi-stage voltage doubler rectifier circuit in which a capacitor and a diode are arranged on an insulating substrate to constitute a booster circuit, and a plurality of booster circuits are stacked in stages. In the apparatus, the size of the insulating substrate of the booster circuit constituting the multistage voltage doubler rectifier circuit is varied depending on the stage, and the high voltage output stage is configured with an insulating substrate smaller than the low voltage output stage.

  According to the present invention, it is possible to secure a withstand voltage between each stage of the multi-stage voltage doubler rectifier circuit and between the high voltage terminal and the outer casing, thereby obtaining a structure that effectively uses the space in the device, and the DC high voltage generator The device scale can be reduced.

  Exemplary embodiments of a direct current high voltage generator according to the present invention will be explained below in detail with reference to the accompanying drawings. In each of the embodiments described below, a symmetric inverse CW circuit will be described as an example. However, other forms of CW circuits may be used, and as an example, a symmetric inverse type with a 13-fold boost is used. A DC high voltage generator having a CW circuit will be described, but is not limited thereto.

Embodiment 1 FIG.
FIG. 1 is a symmetric inverse CW circuit diagram of a 13-fold boost used in the DC high-voltage generator according to the first embodiment. FIG. 2 is a cross-sectional view showing the DC high-voltage generator according to the first embodiment. 2 (A) is a cross-sectional view seen from the front, and FIG. 2 (B) is a cross-sectional view seen from the side.

  First, a symmetrical inverse CW circuit used in the first embodiment will be described with reference to FIG. In FIG. 1, a symmetrical inverse CW circuit 1 is connected to two step-up transformers 102 a and 102 b connected to an inverter circuit 101. The inverter circuit 101 has a half-bridge configuration or a full-bridge configuration that is driven at a high frequency of 10 KHz to 100 KHz, and since these are widely known, detailed description thereof is omitted.

  The step-up transformers 102a and 102b are transformers that step up the output of the inverter circuit 101 several tens of times, and each has primary windings t1a, t2a, secondary windings t1b, t2b, and secondary windings t1b, t2b are connected in series with each other. The polarity of each winding is indicated by a black dot, and the secondary windings t1b and t2b are connected to each other on the black dot side. Both terminals of the secondary winding t1b of the step-up transformer 102a become input terminals T1 and T2 of the symmetrical inverse CW circuit 1, and both terminals of the secondary winding t2b of the step-up transformer 102b are inputs of the symmetrical inverse CW circuit 1. Terminals T2 and T3 are provided. The input terminal T2 is connected to a fixed potential.

  The symmetrical inverse CW circuit 1 is configured by arranging a plurality of diodes and a plurality of capacitors on an insulating substrate. As described above, since the first AC column capacitor and the diode are omitted in the symmetrical inverse CW circuit 1, the first stage simply forms the rectifier circuit unit 11. A plurality of voltage doubler booster circuit units 10 including a DC column capacitor Cb1, AC column capacitors Cb2, Cb3, and diodes Db1 to Db4 are stacked in a stepwise manner on the DC column capacitor Ca and the diodes Da1 and Da2 constituting the rectifier circuit unit 11. These are combined to form a multistage voltage doubler rectifier circuit. In general, the capacity of the DC column capacitor Ca of the rectifier circuit unit 11 is often set to twice the capacity of the DC column capacitor Cb1 of the voltage doubler booster circuit unit 10.

The output voltage of the symmetrical inverse CW circuit 1 is taken out as a high voltage output V through a resistor for load short-circuit protection, that is, a load short-circuit protection resistor 3, and used as a high voltage for generating an electron beam, for example. Is done. At this time, the high voltage output V is the step-up transformer 102a, and the output voltage peak value of 102b and _{v 0,} expressed as _{V = (2n + 1) v} 0. However, n represents the series number of the voltage doubler rectifier circuit unit 10. For example, if the total series number of the voltage doubler rectifier circuit unit 10 is 6, this symmetrical inverse CW circuit is a 13 times booster circuit.

  Further, the high voltage output is often connected to a voltage detection circuit 2 in which a number of resistors 105 and capacitors 106 connected in parallel are connected in series in order to detect this output voltage.

  Note that each of the components of the symmetrical inverse CW circuit 1 is a low breakdown voltage component, but the voltage increases as the voltage is boosted and approaches the output terminal. For this reason, a large potential difference is generated between the low voltage portion and the high voltage portion of the symmetrical inverse CW circuit 1, and discharge between these terminals or between the high voltage portion and the outer peripheral vessel is likely to occur due to the mismatch of these electric fields. In order to prevent the occurrence of such discharge, it is necessary to secure a sufficient withstand voltage, and a device mounting method and an insulation technique are devised.

  The symmetrical inverse CW circuit 1 is configured as described above. Next, a first embodiment of a DC high-voltage generator using the symmetrical inverse CW circuit 1 will be described with reference to FIGS. The configuration will be described with reference to B).

  2 (A) and 2 (B), the symmetrical inverse CW circuit 1 of the DC high voltage generator is installed in a cylindrical outer peripheral container 200, and a step-up transformer 102a disposed on a bottom plate 80 at the bottom of the container. , 102b are stacked in stages and boosted by a booster circuit that combines them. The stages constituting the symmetric inverse CW circuit 1 are stacked at approximately equal intervals via four insulating spacers 90a to 90d, and the voltage detection circuit 2 and the load short-circuit protection resistor 3 are arranged at the uppermost stage. The outer peripheral container 200 is grounded to the GND potential.

  The resin mold blocks 30a to 30d are arranged on an insulating substrate 20a to 20d made of hard resin, for example, glass epoxy resin, and the lowermost resin mold block 30a includes the first rectifier circuit unit 11 and two The double voltage booster circuit unit 10, the next resin mold block 30b includes two voltage doubler voltage booster circuit units 10, and the upper resin mold blocks 30c and 30d each include one voltage doubler voltage booster circuit unit 10. Yes.

  The resin mold blocks 30a to 30d are composed of an insulating substrate, for example, a capacitor and a diode disposed on a printed board. For example, the resin mold block 30d will be described in detail. As shown in FIG. 3, the resin mold block 30d includes diodes Db1 to Db4 disposed on the printed board 110, a DC column capacitor Cb1, and AC column capacitors Cb2 and Cb3. Each of the capacitors constituting the symmetric inverse CW circuit 1 may be a large capacitor having a large capacity, but if a plurality of small capacitors are connected in parallel, the capacitors can be arranged relatively freely. Therefore, there is an advantage that the resin mold block 30d can be further downsized.

  In particular, in FIG. 3, the small capacitors are linearly arranged, but the small capacitors dispersed in a large number do not necessarily have to be linear, and may be arranged by changing the shape as appropriate according to the space of the printed circuit board 110. Also good. For example, when the printed circuit board 110 is circular, a circular shape (according to the shape of the printed circuit board 110, the capacitors arranged in the center of the AC column capacitors Cb2 and Cb3 are closer to the outside, and the capacitors close to the end are closer to the inner side. ). In this case, since the components can be arranged up to approximately the same distance with respect to the outer peripheral container 200 installed in a cylindrical shape, a design in which the area of the printed board 110 is maximized is possible.

  On the other hand, in FIG. 3, for example, when there is a concern about dielectric breakdown between the vicinity of the terminal portion of the AC column capacitor Cb2 and the cathode portion of the diode Db1 or the anode portion of the diode Db3, the end portion of the AC column capacitor Cb2 is connected to the diodes Db1 and Db3. For example, it may be arranged in a bow shape so as to be separated from the center. Of course, the relationship between the AC column capacitor Cb3 and the diode portions Db2 and Db4 is the same. As a result, a sufficient insulation distance can be secured between the terminal portions (or the end portions of the capacitor portion and the end portion of the diode portion).

  Of course, the linear arrangement as shown in FIG. 3 has an advantage that component mounting can be easily performed. In order to secure an insulation distance with respect to the outer container 200, it is more preferable that the terminals on the high voltage side of the capacitors connected in parallel are arranged toward the central portion of the printed circuit board 110. For example, it is desirable that the output terminal 70a has a lower voltage than the output terminal 70d.

  Gaps are provided on the printed circuit board 110 so that an insulation distance is secured between the terminals of the capacitors Cb1, Cb2, and Cb3 and between each capacitor and each diode. These components are fixed on the printed circuit board 110 by soldering, and the components are electrically connected with a copper pattern. The output terminals 70a to 70f of the resin mold block 30d are high withstand voltage wiring cables or high withstand voltage wiring cables via terminal blocks. In other words, the ends of the high withstand voltage wiring cables are resin molded.

  Molding is performed, for example, by inserting the printed circuit board 110 to which components and a high-voltage wiring cable are connected into a container such as acrylic and pouring a resin molding material. At this time, the molding is performed with one end of the wiring cable protruding from the container. After the mold liquid has hardened, the resin mold block 30d is removed from the container and used. Alternatively, the entire container may be used as the resin mold block 30d. If a translucent material such as acrylic is used for the container, there are merits such as confirmation of the filling state of the mold and the presence or absence of bubbles.

  FIG. 4 is a connection diagram of the upper and lower stages of the resin mold blocks 30d and 30c. If the wiring cable is used, the resin mold blocks 30d and 30c after molding can be easily connected. The upper and lower resin mold blocks 30d and 30c are connected by connecting the high-voltage wiring cables 70a and 70f protruding from the resin mold blocks 30d and 30c through the connection terminals 75 in the upper and lower stages. The high withstand voltage wiring cables 70a and 70f may be connected using a high withstand voltage connection terminal 75. However, if insulation can be provided, the high withstand voltage wiring cables 70a and 70f are directly connected to the outer periphery of the connection portion. A simple method such as winding a high-voltage insulating tape or covering the connecting portion with a high-voltage heat-shrinkable tube or the like may be used.

  Further, it is not always necessary to use the high withstand voltage wiring cables 70a and 70f for the connection in the upper and lower stages. One of the features of the present embodiment is that one end of the output terminal is cured with a mold resin and the other end is projected from the mold resin. As long as it satisfies this requirement, a pipe-shaped material made of stainless steel, copper, or the like may be formed as an output terminal. FIG. 5 shows a connection diagram when the metal pipe 76 is used as an output terminal. In particular, since stainless steel has a lower electrical conductivity than copper, generally a large current cannot be passed due to problems such as heat generation. However, since the work function is higher than copper, dielectric breakdown is difficult. Therefore, the use of stainless steel is very effective in the present embodiment in which the structure has a high voltage, a small current, and a short distance between the upper and lower steps.

  The high voltage boosted by the symmetrical inverse CW circuit 1 is taken out via the load short-circuit protection resistor 3 disposed on the uppermost insulating substrate 40, and is used as, for example, a high voltage for generating an electron beam. The high voltage output is connected to the voltage detection circuit 2 installed on the uppermost insulating substrate 40 in the same manner as the load short-circuit protection resistor 3. With this configuration, since the insulation space can be reduced, the DC high-voltage generator can be reduced in size. Further, since the voltage detection circuit 2 needs to have a withstand voltage corresponding to the output of the symmetric inverse CW circuit 1, the voltage detection circuit 2 is configured by connecting a plurality of resistors 105 and capacitors 106 connected in series, and having the lowest potential. A detection voltage is drawn from both ends of a certain resistor. With this configuration, the voltage detection circuit 2 can obtain a withstand voltage corresponding to the output of the symmetrical inverse CW circuit 1. The load short-circuit protection resistor 3 and the voltage detection circuit 2 are molded separately or collectively as in the resin mold blocks 30d and 30c.

  In addition, the load short-circuit protection resistor 3 and the voltage detection circuit 2 have a load short-circuit protection resistor 3 having a high voltage, for example, as shown in FIG. The resistor 105 and the capacitor 106 are arranged in a substantially circular shape arranged at the center of the insulating substrate. By disposing a component having a high voltage in the central portion of the insulating substrate in this way, insulation is ensured with respect to the outer peripheral container 200, so that the mold thickness can be reduced and the space can be used effectively. In addition, since the voltage drop between adjacent components is small in the resistors and capacitors arranged on the outer peripheral portion, the components can be arranged with high density. Therefore, there is an advantage that the apparatus can be reduced in size and weight.

  Further, as shown in FIG. 7, the resistors 105 of the voltage detection circuit 2 arranged on the outer peripheral portion are arranged in a circle toward the center of the outer peripheral container 200, and when connecting the respective resistors, the outer terminals − It is preferable to connect the inner terminal to the outer terminal. Such a connection can minimize the potential difference between the adjacent component terminals, so that the components can be arranged with higher density.

  Furthermore, the load short-circuit protection resistor 3 and the voltage detection circuit 2 are arranged such that the load short-circuit protection resistor 3 that requires a large insulation distance with respect to the outer container 200 is arranged at the center of the circle as shown in FIG. A spiral configuration may be adopted in which the resistor 105 and the capacitor 106 of the voltage detection circuit 2 are sequentially arranged outward as the voltage drops. With such an arrangement, it is possible to reduce the electric field strength with respect to the outer peripheral container 200, and even if the mold thickness is thin, insulation is ensured for the outer peripheral container 200, and the space can be used effectively. Therefore, there is an advantage that the apparatus can be reduced in size and weight.

  Here, the low voltage output stage of the symmetrical inverse CW circuit 1 does not require a large withstand voltage with respect to the outer peripheral container 200 as compared with the high voltage output stage. Therefore, the resin mold block at each stage is made smaller as the high voltage output stage of the symmetrical inverse CW circuit 1 is reached. For example, the lowermost resin mold block 30a has an initial rectifier circuit section 11 and two voltage doubler voltage booster circuit sections 10, and the next resin mold block 30b has two voltage doubler voltage booster circuit sections 10 and an upper resin. One voltage doubler voltage booster circuit unit 10 is arranged in each of mold blocks 30c and 30d. In this way, if the insulating substrate is made smaller as the high voltage output stage is reached and the circuit components are arranged in the central portion of the outer peripheral container 200, insulation is ensured with respect to the outer peripheral container 200, so that the mold thickness can be reduced, and the device can be reduced. There is an advantage that it can be reduced in size and weight.

  In the present embodiment, the sizes of the insulating substrates 20a to 20d are different. As described above, the dielectric breakdown may be considered to occur between the resin mold blocks 30a to 30d and the outer peripheral container 200 or between the resin mold blocks 30a to 30d. When the sizes of all the insulating substrates are aligned with the insulating substrate 20a, the insulation between the resin mold blocks 30a to 30d is further ensured. Specifically, in FIG. 2, for example, an electric field leaks from the end portion between the resin mold blocks 30c and 30d, and there is a possibility that dielectric breakdown occurs. However, the size of the insulating substrate 20d is as in the insulating substrate 20a. If it is sufficiently wide, the electric field strength is weakened and dielectric breakdown is less likely to occur. Alternatively, if all the members are simply arranged on the insulating substrate 20a, there is an advantage that productivity is improved.

  However, if the dielectric breakdown between the resin mold block 30d and the outer peripheral container 200 is considered, there is a possibility of discharge between the resin mold block 30d and the outer peripheral container 200 via the edge surface on the insulating substrate 20d. . In this case, it is desirable to secure a spatial distance between the resin mold block 30d and the outer container 200 in order to ensure the insulation distance. Therefore, in this embodiment, the dielectric breakdown with respect to the outer peripheral container 200 is prevented by reducing the area of the insulating substrate at the upper stage where the generated voltage is higher than that at the lower stage.

  Whether the dielectric breakdown with the outer peripheral container 200 or the dielectric breakdown between the mold resins is dominant depends on the distance from the outer peripheral container 200, the material of the outer peripheral container 200, or the distance between the resin mold blocks 30a to 30d. .

  Although the present embodiment has been described using a symmetric inverse CW circuit of 13-fold boost configured by the rectifier circuit unit 11 and the six-stage voltage doubler booster circuit 10, the number of boost stages of the symmetric inverse CW circuit is limited. Any selection is possible. Further, in the present embodiment, the two-stage booster circuit including the first DC capacitor column and the diode, the next-stage resin mold block 30b includes the two-stage booster circuit, and the upper resin mold blocks 30c and 30d include Although one stage of booster circuits is disposed, the number of booster circuits included in each of the resin mold blocks 30a to 30d is not limited.

Embodiment 2. FIG.
Next, the direct current high voltage generator of Embodiment 2 is demonstrated. FIG. 9 is a front sectional view showing a DC high-voltage generator according to Embodiment 2. In this embodiment, since the basic configuration is the same as that of the first embodiment, the same parts are denoted by the same reference numerals, and the size and arrangement method of the insulating substrate at each stage, and each stage. Except for the point that the resin mold blocks have the same shape, the fabrication method, the connection method, and the configurations of the voltage detection circuit 2 and the load short-circuit protection resistor 3 are the same as those in the first embodiment.

  In the present embodiment, as shown particularly in FIG. 9, the sizes of the insulating substrates 21a to 21d are made different from one another, and the large, small, large,... As described above, dielectric breakdown is likely to occur between the resin mold blocks 31 a to 31 d and between the resin mold blocks 31 a to 31 d and the outer peripheral container 200. In particular, when the insulating substrates 21a to 21d are used, the electric field strength concentrates on the edges (end portions) of the insulating substrates 21a to 21d, and corona discharge is likely to occur, resulting in dielectric breakdown between the resin mold blocks 31a to 31d. There is a case. At this time, it was found that the insulation strength can be secured by separating the edges of the insulating substrates as much as possible. For example, as described in the first embodiment, the structure may be such that the size of the insulating substrate decreases monotonically as it goes upward. At least the distance between the edges can be increased rather than making the insulating substrate area the same. However, this has a problem that the space is difficult to use effectively.

  Therefore, in the present embodiment, the sizes of the insulating substrates 21a to 21d are alternately changed. With such a configuration, it is possible to effectively use the space while ensuring the space between the edges of the insulating substrates 21a to 21d. Specifically, for example, since the size of the uppermost insulating substrate 21d can be secured, a circuit configuration in which the number of uppermost components is increased is possible.

Embodiment 3 FIG.
Next, the direct current high voltage generator of Embodiment 3 is demonstrated. In the first embodiment, the DC high-voltage generator in which the number of symmetrical inverse CW circuits is different for each resin mold block has been described. In particular, the voltage detection circuit 2 is separately configured on the uppermost insulating substrate 40 separately from the symmetrical inverse CW circuit. This is a configuration that is easy to manage from the standpoint of boosting circuit, voltage detection, and function separation, but there is a problem that productivity is poor because the configuration differs at each stage. In particular, since the number of the voltage doubler rectifier circuits 10 of the symmetrical inverse CW circuit is different in each block, the resin mold block has to be manufactured for each block.

  Therefore, in the present embodiment, as shown in FIG. 10 or FIG. 11, the voltage detection circuit and the booster circuit are integrated, and the whole is molded into a resin mold to form resin mold blocks 32a to 32d. FIG. 10 is a front sectional view of the resin mold blocks 32a to 32d, and FIG. 11 is a component arrangement view of the resin mold blocks 32a to 32d as viewed from the top. The component arrangement of FIG. The piezoresistive blocks 2a to 2d are arranged in a distributed manner corresponding to the boosted voltage. At this time, the output terminal 71a is at a lower pressure (GND side) than the output terminal 71b and is aligned in the same direction as the output terminals 70b and 70e. As a result, the voltage gradient is uniform, so that dielectric breakdown is less likely to occur.

  With such a configuration, since all the resin mold blocks 32a to 32d are equal, productivity is improved. Further, in the first embodiment, although the resin mold blocks 30a to 30d are designed so as to increase in voltage toward the top, there is a steep potential gradient from high voltage to GND in the voltage detection circuit 2. However, with the configuration as in the present embodiment, the higher the voltage is, the higher the voltage is unidirectionally, the more rapid the potential gradient does not occur, and the insulation strength can be ensured. That is, a high breakdown voltage can be achieved.

  Since the voltage detection circuit 2 is a monitor for the high voltage output end, strictly speaking, it must divide the GND and the high voltage output end as described in the present invention. If it is considered that the voltage is evenly divided by the CW circuit, it is conceivable to provide a voltage dividing resistor in each symmetrical inverse CW circuit to sense the voltage. That is, the output terminals 70b and 71a, and 70e and 71b may be connected. Alternatively, the voltage dividing resistor block 2a may be arranged in the immediate vicinity of the DC column capacitor Cb1, and the output terminal 70b may be shared.

  Furthermore, as shown in FIG. 12, a configuration in which a part of the symmetrical inverse CW circuit also serves as a voltage dividing function may be used. In FIG. 12, the DC column capacitor Cb1 is not connected in parallel but at least in series, and a voltage dividing resistor 107 is connected in parallel to each capacitor. For example, the DC column capacitor Cb1 is a relatively large capacity capacitor such as a film capacitor, and is configured so that the combined capacitances between the output terminals 70a-70d, 70b-70e, and 70c-70f are substantially equal. If all the symmetrical inverse CW circuits are ideally divided, only the lowermost rectifier circuit unit 11 has the configuration shown in FIG. 12, and a part of the voltage dividing resistor 107 connected in series is used for sensing. By doing so, the number of parts can be greatly reduced.

  As described above, the DC high-voltage generator according to the present invention can secure a dielectric strength between each stage of the multi-stage voltage doubler rectifier circuit and between the high-voltage terminal and the outer casing, and effectively uses the space in the apparatus. The industrial applicability is great.

It is a symmetrical inverse CW circuit diagram of 13 times boost used for the direct-current high-voltage generator of Embodiment 1 of this invention. It is sectional drawing which shows the direct-current high voltage generator by Embodiment 1 of this invention. It is a figure which shows the example of resin mold block arrangement | positioning of the direct-current high voltage generator by Embodiment 1 of this invention. It is a figure which shows the example of a connection of the resin mold block of the direct-current high voltage generator by Embodiment 1 of this invention. It is a figure which shows the other connection example of the resin mold block of the direct-current high-voltage generator by Embodiment 1 of this invention. It is a figure which shows the example of arrangement | positioning of the voltage detection circuit of the direct-current high voltage generator by Embodiment 1 of this invention. It is a figure which shows the other example of arrangement | positioning of the voltage detection circuit of the direct-current high voltage generator by Embodiment 1 of this invention. It is a figure which shows the further example of arrangement | positioning of the voltage detection circuit of the direct-current high voltage generator by Embodiment 1 of this invention. It is sectional drawing which shows the direct-current high voltage generator by Embodiment 2 of this invention. It is sectional drawing which shows the direct current | flow high voltage generator by Embodiment 3 of this invention. It is a figure which shows the example of arrangement | positioning of the resin mold block by Embodiment 3 of this invention. It is a figure which shows the other example of arrangement | positioning of the resin mold block by Embodiment 3 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Symmetric inverse type CW circuit 2 Voltage detection circuit 2a-2d Voltage dividing resistance block 3 Load short circuit protection resistance 10 Voltage doubler voltage booster circuit part 11 Rectifier circuit part 20a-20d, 21a-21d, 40 Insulating board 30a-30d, 31a-31d , 32a to 32d Resin mold block 70a to 70f, 71a, 71b Output terminal (high voltage wiring cable)
75 Connection terminal 76 Metal pipe 80 Bottom plate 90a-90d Insulating spacer 101 Inverter circuit 102a, 102b Step-up transformer 105, 107 Resistance 106 Capacitor 110 Printed circuit board 200 Outer peripheral container T1-T3 Input terminal Ca, Cb1 DC column capacitor t1a, t2a Primary winding Line t1b, t2b Secondary winding Da1, Da2, Da3, Da4 Diode Cb2, Cb3 AC column capacitor

Claims (7)

  In the DC high voltage generator comprising a multi-stage voltage doubler rectifier circuit in which a capacitor and a diode are arranged on an insulating substrate to form a booster circuit, and a plurality of insulating substrates of the booster circuit are stacked in stages, the multi-stage voltage doubler rectifier described above A DC high voltage generator characterized in that the size of the insulating substrate of the booster circuit constituting the circuit is varied depending on the stage, and the high voltage output stage is composed of an insulating substrate smaller than the low voltage output stage.   A DC high voltage generator comprising a multi-stage voltage doubler rectifier circuit in which a capacitor and a diode are arranged on an insulating substrate to constitute a booster circuit, and a plurality of insulating substrates of the booster circuit are stacked in stages. A DC high-voltage generator characterized in that one end of an output terminal of a booster circuit is molded for each stage, and each stage is connected by the other end of the output terminal.   A DC high voltage generator comprising a multi-stage voltage doubler rectifier circuit in which a capacitor and a diode are arranged on an insulating substrate to form a booster circuit, and a plurality of step-up voltage rectifier circuits are stacked in stages. A DC high voltage generator characterized in that a voltage detection circuit for detecting an output voltage of the device is disposed on an insulating substrate provided on the uppermost stage of the multi-stage voltage doubler rectifier circuit and is molded with a molding material.   4. The DC high voltage generator according to claim 3, wherein the voltage detection circuit is constituted by connecting a plurality of resistors and capacitors connected in parallel in series.   A DC high voltage generator comprising a multi-stage voltage doubler rectifier circuit in which a capacitor and a diode are arranged on an insulating substrate to form a booster circuit, and a plurality of step-up voltage rectifier circuits are stacked in stages. The output voltage of the device is taken out through a resistor, and the resistor is placed on an insulating substrate provided on the uppermost stage of the multi-stage voltage doubler rectifier circuit, and is formed of a molding material. Voltage generator.   6. The DC high voltage generator according to claim 5, wherein the high voltage side of the resistor is disposed in the center of the insulating substrate.   A DC high voltage generator comprising a multi-stage voltage doubler rectifier circuit in which a capacitor and a diode are arranged on an insulating substrate to form a booster circuit, and a plurality of step-up voltage rectifier circuits are stacked in stages. A voltage detection circuit for detecting the output voltage of the device is configured by connecting a plurality of resistors and capacitors connected in parallel in series, and the resistors and capacitors connected in parallel are connected to a plurality of insulating substrates of the multistage voltage doubler rectifier circuit. A direct-current high-voltage generator characterized by being arranged in a distributed manner corresponding to the boosted voltage.

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