JP2008028200A - Three-dimensional circuit component and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a three-dimensional circuit component capable of obtaining excellent electromagnetic wave shieldability, and to provide its manufacturing method. <P>SOLUTION: By forming a recess 2 provided with a metal film 6 including carbon nanotubes 7 on the inner side face on an insulation substrate 1, and arranging a sensor element 4 which needs to be shut off from noise inside the recess 2; the sensor element 4 is surrounded by the metal film 6 including the carbon nanotubes 7. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a three-dimensional circuit component and a method for manufacturing the same.

  In a three-dimensional circuit component, an electronic component that becomes a noise source or an electronic component that needs to be shielded from noise may be mounted. For example, a sensor element or the like operates with a weak current. It is strongly affected and easily causes malfunctions.

In addition, as a conventional electromagnetic wave shield, a polyamide resin and carbon fiber are melt-kneaded and molded (for example, refer to Patent Document 1), an antistatic layer or a conductive layer made of a thermoplastic resin containing carbon nanotubes. Some are provided on a substrate (for example, see Patent Documents 2 and 3).
Japanese Patent Laid-Open No. 2002-234950 Japanese Patent Application Laid-Open No. 2004-230690 Japanese Patent Laid-Open No. 2004-253776

  However, the conventional electromagnetic wave shielding body is not an insulator because carbon fiber or carbon nanotube is mixed in the resin, and circuit formation by electroplating is impossible. It could not be used. Moreover, the electromagnetic wave shielding property was not sufficient.

  This invention is made | formed in view of the said reason, The objective is to provide the three-dimensional circuit component which can obtain the outstanding electromagnetic wave shielding property, and its manufacturing method.

  The invention of claim 1 comprises an insulating substrate provided with an inner surface surrounding an electronic component that is a noise source or an electronic component that needs to be shielded from noise, and carbon nanotubes are provided on at least the inner surface of the insulating substrate. One or more layers of metal films are provided.

  According to the present invention, excellent electromagnetic shielding properties can be obtained by the synergistic effect of reflection or absorption of electromagnetic waves by metal and absorption of electromagnetic waves by carbon nanotubes.

  According to a second aspect of the present invention, in the first aspect, the metal film is copper or an alloy containing copper.

  According to this invention, since copper has high conductivity (low volume resistivity), loss due to reflection of electromagnetic waves can be increased.

  According to a third aspect of the present invention, in the first aspect, the metal film is nickel or an alloy containing nickel.

  According to this invention, since nickel has a large magnetic loss, the loss due to the absorption of electromagnetic waves can be increased.

  A fourth aspect of the present invention is the electronic device according to any one of the first to third aspects, wherein the insulating substrate is formed with a recess provided on the inner surface of the metal film containing carbon nanotubes, and the electron provided on the bottom surface of the recess. A mounting terminal for mounting a component, a wiring pattern provided on the outer surface of the insulating substrate, and a through hole for connecting the mounting terminal and the wiring pattern are provided.

  According to the present invention, since the wiring pattern does not pass through the inner side surface of the recess, the metal film containing carbon nanotubes can be formed on the entire inner side surface, and the shielding effect against electromagnetic waves is further improved.

  According to a fifth aspect of the present invention, the insulating substrate according to any one of the first to fourth aspects, wherein the insulating substrate is formed with concave portions provided with the metal film containing carbon nanotubes on an inner surface and a bottom surface, and the electronic device is disposed in the concave portion. It is characterized by arranging.

  According to the present invention, the shielding effect against electromagnetic waves is further improved.

  According to a sixth aspect of the present invention, in any one of the first to fifth aspects, the insulating substrate is formed with a concave portion having an opening on one surface, the electronic device is disposed in the concave portion, and the inner side surface of the concave portion and the insulating substrate The metal film containing carbon nanotubes is provided on the one surface of the substrate, and the one surface of the insulating substrate is covered with a metal lid that closes the opening of the recess and contacts the metal film provided on the one surface. To do.

  According to the present invention, the shielding effect against electromagnetic waves is further improved.

  A seventh aspect of the invention is characterized in that, in the sixth aspect, the metal film provided on one surface of the insulating substrate is used as a power supply line for an electroplating process performed when another metal film is formed.

  According to the present invention, it is not necessary to separately provide a feeder line, and the structure can be simplified.

  In the invention of claim 8, after the surface of the insulating substrate is activated by plasma treatment, a metal layer covering the surface of the insulating substrate is formed, and then the boundary between the circuit forming portion and the non-circuit forming portion. In a method of manufacturing a three-dimensional circuit component in which a metal film is formed by irradiating a region with a laser beam to remove a metal layer in a boundary region and then plating the metal layer in a circuit forming portion, an electron that becomes a noise source One or more metal films containing carbon nanotubes are formed by plating on at least the inner surface of an insulating substrate provided with an inner surface surrounding an electronic component that needs to be shielded from components or noise. To do.

  According to the present invention, excellent electromagnetic shielding properties can be obtained by the synergistic effect of the reflection or absorption of electromagnetic waves by the metal film and the absorption of electromagnetic waves by the carbon nanotubes.

  As described above, the present invention has an effect that an excellent electromagnetic shielding property can be obtained.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
1 and 2 (a) and (b) (FIG. 2 (a) shows a cross section taken along line X1-X1 ′ of FIG. 2 (however, sensor element 4 is omitted in FIG. 2 (b)). 1 shows the configuration of the three-dimensional circuit component A1 of the present embodiment, in which a recess 2 is formed on the top surface of an insulating substrate 1 formed in a rectangular parallelepiped, and a pair of mounting terminals 3 and 3 are formed on the bottom surface of the recess 2. The sensor element 4 is disposed on the mounting terminals 3 and 3, and the sensor element 4 is electrically connected to the mounting terminals 3 and 3. A wiring pattern 5 extends from the mounting terminal 3, and the wiring pattern 5 extends in the opposite direction from each mounting terminal 3, so that the bottom surface of the recess 2, the inner surface of the insulating substrate 1, and the insulating substrate 1. It is formed in a straight line over the upper surface of the outer edge and the outer surface of the insulating substrate 1, and is electrically connected to the outside of the three-dimensional circuit component A1. When the sensor element 4 detects and outputs a change in its own capacitance or resistance value, a pair of mounting terminals 3 and a pair of wiring patterns 5 are formed as shown in FIG. When the sensor element 4 requires a power supply, three mounting terminals 3 and three wiring patterns 5 are formed and used as a power supply line, a signal line, and a GND line, respectively.

  In this embodiment, the metal film 6a is formed on the inner surface of the insulating substrate 1 other than the vicinity of the wiring pattern 5, the metal film 6b is formed on the outer surface, and the inner surface and the outer surface are formed on the upper surface of the outer edge portion of the insulating substrate 1. The metal films 6c that connect the metal films 6a and 6b on the side surfaces are formed at two locations, and these metal films 6 (hereinafter, the metal films 6a, 6b, 6c,. ) Contains carbon nanotubes 7.

  Hereinafter, the process of forming the mounting terminals 3, the wiring pattern 5, and the metal film 6 on the surface of the insulating substrate 1 will be described with reference to FIGS. 3 (a) to 3 (c) and FIGS. 4 (a) to 4 (d). To do. First, the insulating substrate 1 is made of a polymer base material excellent in heat resistance such as polyphthalamide (PPA), liquid crystal polymer (LCP), polyether ether ketone (PEEK), or alumina (92 to 99%), aluminum nitride, The substrate is made of a ceramic substrate such as silicon carbide, and is formed into a rectangular parallelepiped through a pin gate 8 provided on the outer surface of the insulating substrate 1 facing each other where the wiring pattern 5 is not formed. It is formed (FIG. 3A). A preferable polymer base material is a thermoplastic resin. In addition to the above, for example, 6 nylon (PA6), 6-6 nylon (PA6-6), 4-6 nylon (PA46), 11 nylon (PA11) , 6-10 nylon, PA-MXD-6, polyamides such as aromatic polyamide (PA6T, PA9T, etc.), polyphenylene sulfide, polyketones such as polyphenylene ether, polyetherketone, or polyethylene terephthalate (PET), polybutylene terephthalate Examples thereof include polyester, polyetherimide, polyimide and the like.

Next, the surface of the insulating substrate 1 is subjected to RF plasma treatment to activate the surface of the insulating substrate 1. The plasma processing is performed using a plasma processing apparatus in which a pair of electrodes are disposed facing each other in a chamber, a high frequency power source is connected to one electrode, and the other electrode is grounded. And when plasma-treating the surface of the insulating substrate 1, the insulating substrate 1 is set on one electrode, the inside of the chamber is evacuated to reduce the pressure to about 10 ⁻⁴ Pa, and then N ₂ or NH is put into the chamber. A gas having an active chemical reaction such as ₃ is introduced and circulated, the gas pressure in the chamber is controlled to 8 to 15 Pa, and then a high frequency voltage (RF: 13.56 MHz) is applied between the electrodes by a high frequency power source. Apply for about 100 seconds. At this time, the active gas in the chamber is excited by the gas discharge phenomenon due to the high-frequency glow discharge between the electrodes, plasma such as cations and radicals is generated, and cations and radicals are formed in the chamber.

  The cations, radicals, and the like collide with the surface of the insulating substrate 1 to activate the surface of the insulating substrate 1, and chemically bond between the insulating substrate 1 and the metal layer M1 in the metalizing process described later. Can be formed to improve the adhesion. In particular, when a cation attracts and collides with the insulating substrate 1, a nitrogen polar group or an oxygen polar group that easily binds to a metal is introduced to the surface of the insulating substrate 1, so that the adhesion with the metal layer M 1 is further improved.

  Note that the conditions for the plasma treatment are not limited to the above, and the conditions can be arbitrarily set within a range in which the surface of the insulating substrate 1 is not excessively roughened by the plasma treatment. The type of plasma is not particularly limited, but nitrogen plasma treatment is desirable. In the nitrogen plasma treatment, since the ester bond of the resin is not cut and the carbon dioxide gas is not released as in the oxygen plasma treatment, the strength reduction of the surface layer portion of the insulating substrate 1 can be suppressed. It can prevent that adhesiveness falls.

  Then, after the plasma treatment of the insulating substrate 1 as described above, a metalizing process for forming the metal layer M1 on the surface of the insulating substrate 1 by a physical vapor deposition method (PVD method) such as sputtering, vacuum vapor deposition, or ion plating is performed. Perform (FIG. 3B). Here, after the insulating substrate 1 is plasma-treated in the chamber, it is desirable to perform any treatment such as sputtering, vacuum deposition, ion plating, etc. in a continuous process without opening the inside of the chamber to the atmosphere. As a metal forming the metal layer M1, a simple substance such as copper, nickel, gold, aluminum, titanium, molybdenum, chromium, tungsten, tin, lead, brass, nichrome, or an alloy can be used.

As the sputtering, for example, a DC sputtering method is applied. First, the insulating substrate 1 is placed in the chamber, the inside of the chamber is evacuated by a vacuum pump and the pressure is reduced to about 10 ⁻⁴ Pa, and then an inert gas such as argon is brought to a gas pressure of 0.1 Pa in the chamber. To introduce. Then, by applying a DC voltage of 500 V to the insulating substrate 1, the copper target is bombarded, and a metal layer M1 such as copper having a thickness of about 200 to 500 nm is formed on the surface of the insulating substrate 1.

Moreover, as a vacuum evaporation, an electron beam heating type vacuum evaporation system is applied, for example. First, the insulating substrate 1 is placed in the chamber, and the inside of the chamber is evacuated by a vacuum pump to reduce the pressure to about 10 ⁻⁴ Pa. Then, an electron current of 400 to 800 mA is generated, When heated by colliding with the vapor deposition material, the vapor deposition material evaporates, and a metal layer M1 such as copper having a film thickness of about 200 nm is formed on the surface of the insulating substrate 1.

When the metal layer M1 is formed by ion plating, first, the insulating substrate 1 is placed in the chamber, the inside of the chamber is evacuated by a vacuum pump and the pressure is reduced to about 10 ⁻⁴ Pa, and then the vacuum deposition is performed. The evaporation material in the crucible is evaporated, and an inert gas such as argon is introduced into the induction antenna provided between the insulating substrate 1 and the crucible so that the gas pressure in the chamber is 0.05 to 0. 0. Plasma is generated by setting to 1 Pa. Then, high frequency power of 13.56 MHz and 500 W is applied to the induction antenna, and further, high frequency power is applied to the electrode on which the insulating substrate 1 is placed to generate a desired bias voltage, thereby causing 200 to 500 nm. A metal layer M <b> 1 such as copper having a thickness of about a thickness is formed on the surface of the insulating substrate 1.

  In forming the metal layer M1 on the surface of the insulating substrate 1 by the physical vapor deposition method, it is difficult to obtain an adhesive force capable of forming a circuit even if the metal layer M1 is formed without performing plasma treatment. As described above, the surface of the insulating substrate 1 is chemically activated in advance by plasma treatment, so that the adhesion of the metal layer M1 to the surface of the insulating substrate 1 is increased.

  In addition to the above, an electroless plating process may be used for the metalizing process.

  Next, patterning for forming a circuit with the metal layer M1 provided on the surface of the insulating substrate 1 is performed (FIG. 3C). In the present embodiment, the insulating substrate 1 has a three-dimensional solid surface having a concave portion 2 formed on the upper surface thereof, and by forming a circuit pattern after forming the metal layer M1 on the three-dimensional surface, a three-dimensional surface such as MID is formed. Finish on the circuit board.

  Patterning is performed by, for example, a laser method (fine three-dimensional laser processing). By irradiating the metal layer M1 with a laser beam along the boundary region between the circuit forming portion and the circuit non-forming portion, and removing the metal layer M1 in the boundary region, the metal layer M1 in the circuit forming portion is used as a circuit pattern. It separates from the circuit non-formation part of the metal layer M1.

  Next, power is supplied only to the metal layer M1 in the circuit forming portion through the pin gate 8, and the copper conductive layer M2 having a thickness of about 5 to 20 μm is formed on the surface of the metal layer M1 by performing an electrolytic copper plating process. Form (FIG. 4A). This copper conductive layer M2 may be any copper plating of copper sulfate, copper cyanide, copper pyrophosphate, copper borofluoride.

  Next, by performing a soft etching process, the metal layer M1 remaining in the circuit non-formation portion is removed, and the circuit formation portion having the copper conductive layer M2 formed on the surface is left to form a circuit having a desired pattern shape. The formed circuit board is obtained (FIG. 4B). This soft etching treatment uses ammonium persulfate, nitric acid, sulfuric acid, hydrochloric acid or the like when the metal layer M1 is copper.

  Next, power is supplied through the pin gate 8, and the surface of the copper conductive layer M2 is subjected to an electro nickel plating process to form a nickel conductive layer M3 having a thickness of about several μm (FIG. 4C). For this electro nickel plating treatment, any of Watts bath, sulfamic acid bath, citric acid bath, borofluoride bath, total chloride bath, or total sulfate bath may be used.

  Next, power is supplied through the pin gate 8, and the surface of the nickel plating layer M3 is subjected to electrogold plating to form a gold conductive layer M4 having a thickness of about several μm (FIG. 4D).

  3 and 4 show the processing for one insulating substrate 1, but when a plurality of insulating substrates 1 are made from one molded body, the above-described series of processing is performed on the molded body, and the final processing is performed. The insulating substrate 1 is cut into individual pieces.

  The mounting terminal 3, the wiring pattern 5, and the metal film 6 are composed of the metal layer M1, the copper conductive layer M2, the nickel conductive layer M3, and the gold conductive layer M4 by the above-described series of processing. In order to contain the nanotubes 7, in the electrolytic copper plating process, the carbon nanotubes 7 are added to the copper plating solution together with a dispersing agent, and the carbon nanotubes 7 are dispersed in the plating solution by the dispersing agent. The copper conductive layer M <b> 2 including the carbon nanotubes 7 is formed by performing an electrolytic copper plating process using the above. The plating solution may be copper or an alloy containing copper.

  Alternatively, in the nickel plating treatment, the carbon conductive layer M3 containing the carbon nanotubes 7 is formed by adding the carbon nanotubes 7 together with the dispersant in the nickel plating solution, and the carbon nanotubes 7 are formed on the metal film 6. Containing. The plating solution may be nickel or an alloy containing nickel.

  Alternatively, both the copper conductive layer M2 containing the carbon nanotubes 7 and the nickel conductive layer M3 containing the carbon nanotubes 7 may be formed so that the carbon nanotubes 7 are contained in the metal film 6. Good.

  As shown in FIG. 1, metal films 6a and 6b containing carbon nanotubes 7 are respectively formed on the inner and outer surfaces of the insulating substrate 1, and the copper or copper alloy of the copper conductive layer M2 is conductive. Because of its high properties (low volume resistivity), the loss due to the reflection of the electromagnetic wave can be increased, and the nickel or nickel alloy of the nickel conductive layer M3 has a large absorption of the electromagnetic wave due to the magnetic loss, so the metal films 6a and 6b reflect the electromagnetic wave noise. , And further, the carbon nanotube 7 absorbs electromagnetic wave noise, so that the sensor element 4 disposed on the bottom surface of the recess 2 is resistant to electromagnetic wave noise by the synergistic effect of the surrounding metal films 6a and 6b and the carbon nanotube 7. Excellent shielding properties can be obtained, and interference of electromagnetic wave noise from outside and superposition of noise can be prevented.

  Further, not only the metal film 6 but also the mounting terminals 3 and the wiring patterns 5 are plated using a plating solution mixed with the carbon nanotubes 7 to form the mounting terminals 3 and the wiring patterns 5 containing the carbon nanotubes 7. Alternatively, the shielding property can be further improved, and the mounting terminal 3 and the wiring pattern 5 including the carbon nanotubes 7 are excellent in electrical conductivity.

  In addition, if an electronic component serving as a noise source is disposed in the recess 2 instead of the sensor element 4, the electromagnetic noise emitted to the outside is suppressed by the synergistic effect of the surrounding metal films 6a and 6b and the carbon nanotubes 7. it can.

(Embodiment 2)
5 and 6A to 6C show the configuration of the three-dimensional circuit component A2 of the present embodiment. The same reference numerals are given to the same configurations as those of the first embodiment, and the description thereof will be omitted. FIG. 6A shows an X2-X2 ′ cross section of FIG.

  The three-dimensional circuit component A2 is constituted by an insulating substrate 11 formed into a rectangular frame, and a rectangular hole 11b is formed inside the frame portion 11a of the insulating substrate 11. A plurality of continuous wiring patterns 12 are formed on the two opposite sides of the frame portion 11a over the three surfaces of the upper surface, the inner surface, and the lower surface, and are formed on the inner surfaces of the remaining two sides of the frame portion 11a. A metal film 6a containing carbon nanotubes 7 is formed, and a metal film 6b containing carbon nanotubes 7b is also formed on the outer surface of the frame portion 11a.

  When the insulating substrate 11 is formed, the base material is supplied through the side gates 13 provided along two sides forming the wiring pattern 12 of the frame portion 11a.

  Further, the process of forming the metal film 6 and the wiring pattern 12 on the surface of the insulating substrate 11 is the same as that of the first embodiment shown in FIGS. 3 (a) to 3 (c) and FIGS. 4 (a) to 4 (d). 4A, 4C, and 4D, power is supplied through the side gates 13 provided along two sides of the insulating substrate 11 on which the wiring pattern 12 is formed. Further, the process of incorporating the carbon nanotubes 7 into the metal film 6 is also performed in the same manner as in the first embodiment.

  In addition, if the plurality of insulating substrates 1 are formed of a single molded body through the side gates 13, the plurality of insulating substrates 1 are fed by supplying power to the respective insulating substrates 1 through the wiring patterns 14 provided on the side gates 13. At the same time, electroplating can be performed. Finally, the side gate 13 is cut and divided into individual pieces, thereby improving productivity.

  The three-dimensional circuit component A2 (FIG. 6A) is placed on the upper surface of the printed wiring board 21 on which the electronic component 22 serving as a noise source is mounted. The electronic component 22 is placed in the hole 11b of the insulating substrate 1. The wiring pattern 23 located on the upper surface of the printed wiring board 21 is electrically connected to the wiring pattern 12 formed on the lower surface of the frame portion 11a of the insulating substrate 1 via the solder H1 (FIG. 6B). Further, on the upper surface of the three-dimensional circuit component A2, the lower surface of the printed wiring board 24 on which the electronic component 25 serving as a noise source is mounted on the lower surface is placed. The electronic component 25 is located in the hole 11b of the insulating substrate 1 and is printed. The wiring pattern 26 on the lower surface of the wiring board 24 is electrically connected to the wiring pattern 12 formed on the upper surface of the frame portion 11a of the insulating substrate 1 through the solder H2 (FIG. 6C). That is, the printed wiring boards 21 and 24 are electrically connected to each other via the wiring pattern 12 of the three-dimensional circuit component A2.

  In the state of FIG. 6C, the electronic components 22 and 25 are located in the holes 11b of the frame portion 11a of the three-dimensional circuit component A2, and contain carbon nanotubes 7 formed on the inner and outer surfaces of the frame portion 11a. The surroundings are surrounded by metal films 6a and 6b. Therefore, an excellent shielding property against electromagnetic wave noise can be obtained by the synergistic effect of the metal films 6a and 6b surrounding the periphery and the carbon nanotube 7, and electromagnetic wave noise emitted to the outside can be suppressed. Further, if a sensor element is mounted on the printed wiring boards 21 and 24 instead of the electronic components 22 and 25, interference of electromagnetic wave noise from outside and superposition of noise can be prevented.

  In this way, it is not necessary to provide a metal shield member on each of the printed wiring boards 21 and 24, and it is possible to reduce the size while electrically connecting the printed wiring boards 21 and 24 to each other by a single three-dimensional circuit component A2. In addition, an excellent shielding property can be obtained for the electronic components mounted on the printed wiring boards 21 and 24.

(Embodiment 3)
7, FIG. 8 (a) (b), FIG. 9 has shown the structure of 3D circuit component A3 of this embodiment, The same code | symbol is attached | subjected to the structure similar to Embodiment 1, and description is abbreviate | omitted. To do. FIG. 8A shows an X3-X3 ′ cross section of FIG.

  In the three-dimensional circuit component A3, the mounting terminal 3 provided on the bottom surface of the recess 2 of the insulating substrate 1 is provided with a wiring pattern provided on the bottom surface of the insulating substrate 1 through a through hole 31 penetrating the bottom surface of the recess 2 in the vertical direction. 32 (see a partially enlarged view of FIG. 9). Therefore, in the first embodiment, the metal films 6a and 6b containing the carbon nanotubes 7 are formed on the inner side surface and the outer side surface of the insulating substrate 1 avoiding the wiring pattern 5, but in this embodiment, the carbon nanotubes 7 The metal films 6a and 6b containing can be formed over the entire inner surface and outer surface of the insulating substrate 1, and the shielding effect is further improved.

  In this embodiment, as shown in FIG. 8B, three mounting terminals 3 are provided, and the sensor element 4 is connected to a power supply line, a signal line, and a GND line via each mounting terminal 3. Yes.

(Embodiment 4)
FIGS. 10, 11A and 11B show the configuration of the three-dimensional circuit component A4 of the present embodiment. The same reference numerals are given to the same configurations as those of the second embodiment, and the description thereof will be omitted. In addition, Fig.11 (a) shows the X4-X4 'cross section of FIG.

  The three-dimensional circuit component A4 is provided with a plurality of connection terminals 41, 43 on the upper and lower surfaces of the frame portion 11a of the insulating substrate 11, and each connection terminal 41 and each connection terminal 43 penetrates the frame portion 11a in the vertical direction. Electrical connection is made through the through hole 42 (see a partially enlarged view of FIG. 11B). Therefore, in Embodiment 2, in order to form the wiring pattern 12 on the upper surface, the inner surface, and the lower surface of the frame portion 11a of the insulating substrate 11, the inner surface of the frame portion 11a avoids the wiring pattern 12 and contains the carbon nanotubes 7. Although the metal film 6a is formed, in this embodiment, the metal film 6a containing the carbon nanotubes 7 can be formed over the entire inner surface of the frame portion 11a, and the shielding effect is further improved.

(Embodiment 5)
12A and 12B, the three-dimensional circuit board A5 is not limited to the inner surface and the outer surface of the insulating substrate 1 in the three-dimensional circuit board A1 of Embodiment 1, but also the bottom surface of the recess 2 of the insulating substrate 1. By forming the metal film 6d containing the nanotubes 7, it is possible to further improve the shielding effect.

  13A and 13B is not limited to the inner surface and the outer surface in the three-dimensional circuit board A3 of the third embodiment, and the carbon nanotubes 7 are also formed on the bottom surface of the recess 2 of the insulating substrate 1. The metal film 6d containing is formed, and the shield effect can be further improved.

(Embodiment 6)
FIG. 14, FIG. 15 (a) (b) has shown the structure of 3D circuit component A7 of this embodiment, the same code | symbol is attached | subjected to the structure similar to Embodiment 1, and description is abbreviate | omitted.

  In the three-dimensional circuit component A7, a concave portion 61 is provided in each of the upper surfaces of two opposite outer edge portions of the insulating substrate 1 at a substantially central portion in the side direction, and the wiring pattern 5 passes through the concave portion 61. It is formed to be continuous with the inner surface and the outer surface.

  A metal film 6c containing carbon nanotubes 7 is formed continuously on the inner and outer metal films 6a and 6b on the entire upper surface of the outer edge of the insulating substrate 1 excluding the recess 61. ing. A metal lid 62 is arranged on the upper surface of the insulating substrate 1 so as to block the opening of the recess 2, and the lower surface of the metal lid 62 is formed on the metal film 6 c provided on the upper surface of the outer edge portion of the insulating substrate 1. It is connected via the solder H3. Therefore, the metal film 6 and the lid 62 of the three-dimensional circuit component A7 have the same potential, and the shielding effect is further improved.

  Further, as shown in FIG. 15A, the three-dimensional circuit component A6 covering the lid 62 is mounted on the printed wiring board 63, and the metal film 6b provided on the outer surface of the insulating substrate 1 is attached to the printed wiring board 63. By connecting the metal film 6 and the lid 62 to the GND potential of the printed wiring board 63, the shielding effect is further improved.

  Furthermore, in the present embodiment, the metal film 6c is formed on the entire upper surface of the outer edge portion of the insulating substrate 1 excluding the recess 61, so that the contact area between the metal film 6c and the lid 62 is maximized, and the shielding by the lid 62 is performed. The function is effective.

(Embodiment 7)
FIG. 16 shows the configuration of the three-dimensional circuit component A8 of the present embodiment. The same reference numerals are given to the same configurations as those of the first embodiment, and the description thereof will be omitted.

  In the three-dimensional circuit component A8, a concave portion 61 is provided in each of the upper surfaces of two opposite outer edges of the insulating substrate 1 at the substantially center in the side direction, and the wiring pattern 5 passes through the concave portion 61 to It is formed to be continuous with the inner surface and the outer surface.

  The metal lid 62 is disposed on the upper surface of the insulating substrate 1 so as to block the opening of the recess 2, and the lower surface of the metal lid 62 is provided at two locations on the upper surface of the outer edge portion of the insulating substrate 1. The film 6c is connected via the solder H5. Therefore, the metal film 6 and the lid 62 of the three-dimensional circuit component A7 have the same potential, and the shielding effect is further improved.

  Further, if the two metal films 6c provided on the upper surface of the outer edge portion of the insulating substrate 1 are used as a power supply line in the electroplating process of FIGS. 4A, 4C and 4D, it is necessary to provide a power supply line separately. The structure can be simplified.

FIG. 3 is a perspective view illustrating a configuration of a molded circuit component according to the first embodiment. (A) (b) It is sectional drawing and a top view which show the structure same as the above. (A)-(c) It is sectional drawing which shows the manufacturing method same as the above. (A)-(d) It is sectional drawing which shows the manufacturing method same as the above. It is a perspective view which shows the structure of the three-dimensional circuit component of Embodiment 2. FIG. (A)-(c) It is sectional drawing which shows the usage pattern same as the above. It is a perspective view which shows the structure of the three-dimensional circuit component of Embodiment 3. FIG. (A) (b) It is sectional drawing and a top view which show the structure same as the above. It is an expanded sectional view showing a part same as the above. It is a perspective view which shows the structure of the three-dimensional circuit component of Embodiment 4. (A) (b) It is sectional drawing and a partially expanded sectional view which show the structure same as the above. (A) (b) It is the perspective view and top view which show the structure of the three-dimensional circuit component of Embodiment 5. FIG. (A) (b) It is the perspective view and top view which show the structure of another three-dimensional circuit component same as the above. FIG. 10 is a perspective view illustrating a configuration of a molded circuit component according to a sixth embodiment. (A) (b) It is sectional drawing and a partial enlarged view which show the structure same as the above. FIG. 10 is a perspective view illustrating a configuration of a molded circuit component according to a seventh embodiment.

Explanation of symbols

A1 three-dimensional circuit component 1 Insulating substrate 2 Recessed part 3 Mounting terminal 4 Sensor element 5 Wiring pattern 6 Metal film 7 Carbon nanotube

Claims (8)

One or more metal films including an insulating substrate having an inner surface that surrounds an electronic component that is a noise source or an electronic component that needs to be shielded from noise, and includes carbon nanotubes on at least the inner surface of the insulating substrate A three-dimensional circuit component comprising: The three-dimensional circuit component according to claim 1, wherein the metal film is copper or an alloy containing copper. The three-dimensional circuit component according to claim 1, wherein the metal film is nickel or an alloy containing nickel. The insulating substrate is formed with a recess provided on the inner surface with the metal film containing carbon nanotubes, and provided on the outer surface of the insulating substrate for mounting the electronic component provided on the bottom surface of the recess. 4. The three-dimensional circuit component according to claim 1, further comprising: a wiring pattern; and a through hole that connects the mounting terminal and the wiring pattern. 5. 5. The insulating substrate according to claim 1, wherein the insulating substrate is formed with a recess provided on the inner surface and the bottom surface of the metal film containing carbon nanotubes, and the electronic device is disposed in the recess. 3D circuit parts. The insulating substrate is formed with a recess having an opening on one surface, the electronic device is disposed in the recess, and the metal film containing carbon nanotubes is provided on the inner surface of the recess and the one surface of the insulating substrate,
6. The three-dimensional circuit component according to claim 1, wherein the one surface of the insulating substrate is covered with a metal lid that closes the opening of the recess and contacts the metal film provided on the one surface. The three-dimensional circuit component according to claim 6, wherein the metal film provided on one surface of the insulating substrate is used as a power supply line for an electroplating process performed when another metal film is formed. After the surface of the insulating substrate is activated by plasma treatment, a metal layer is formed to cover the surface of the insulating substrate, and then laser light is irradiated to the boundary area between the circuit forming portion and the non-circuit forming portion. In the method of manufacturing a three-dimensional circuit component in which a metal film is formed by removing the metal layer in the boundary region and then plating the metal layer in the circuit forming portion.
One or more metal films containing carbon nanotubes are formed by plating on at least the inner surface of an insulating substrate provided with an inner surface that surrounds an electronic component that becomes a noise source or an electronic component that needs to be shielded from noise. A method for manufacturing a three-dimensional circuit component.

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