JP2008028020A - Device and method for heating surface of substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To correctly control the depth of heating and the temperature of the surface of a substrate. <P>SOLUTION: A device for heating the substrate surface by irradiating accelerated electron against the surface of the substrate includes an electron producing means for producing electron between opposed electrodes 12, by discharging a gas between the opposed electrodes 12 arranged in a vacuum vessel 11; a bias application means for applying DC bias on the opposed electrodes 12 and the substrate 18, in order to irradiate electron against the surface of the substrate 18 installed in the vacuum vessel 11; and an irradiation control means for reading the amount of irradiated electron as the value of current and control the amount of irradiation of the electron against the substrate 18, by integrating the values of the current. According to this method, the depth of heating and the temperature of the surface of the substrate 18 are controlled correctly. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate surface heating apparatus and a substrate surface heating method, and more particularly to a substrate surface heating apparatus and a heating method for irradiating a substrate surface with electrons accelerated in a vacuum.

  Heat treatment (annealing) in the manufacture of semiconductor devices is mainly performed by crystallinity recovery of semiconductor materials, dopant impurity diffusion, and electrical activation. With the recent miniaturization of semiconductor elements, heat treatment becomes a cause of unnecessary atomic diffusion, so the atomic layer order (0.1 to 1 nm) from the surface, such as for forming ultra shallow junctions with a depth of 50 nm or less. Heating technology in the area is needed.

Currently, surface heating techniques include RTA (Rapid Thermal Annealing) using infrared rays and laser annealing using ultraviolet light.
In the infrared annealing, the resolution in the depth direction is low. For this reason, the temperature in the depth direction cannot be controlled sufficiently. On the other hand, even if laser annealing of ultraviolet light is used, the resolution is about 5 nm at the silicon substrate, and heating in the atomic layer order is difficult.

  Further, a method of irradiating active species in plasma is disclosed (for example, see Patent Document 1). In this method, the ability to prevent active species from entering due to elastic collision with atoms constituting the sample is large, and heating in an extremely shallow region is possible. However, the method of causing the active species to collide has a large mass of the active species and induces damage on the surface of the element. Therefore, this method is not suitable for the application of an ultra-shallow junction having a depth of 50 nm or less.

  In this respect, the method of irradiating electrons is effective. This is because when the electrons are accelerated and irradiated with a predetermined voltage, the penetration depth of the electrons can be controlled to be extremely short in the solid. For example, the mean free path of electrons at a voltage of 1 keV or less is 1 nm or less.

As an electron source for the method of irradiating electrons, irradiation of electrons generated in plasma is disclosed (for example, see Patent Documents 2 and 3).
JP 2003-68666 A JP-A-8-165563 JP 2001-28343 A

  However, JP-A-8-165563 uses a radiation thermometer for controlling the surface temperature, and lacks controllability to what extent the surface is heated accurately.

  On the other hand, in Japanese Patent Laid-Open No. 2001-28343, a plasma source and a grid electrode are opposed to each other, and a positive potential is applied to the grid electrode. And the apparatus structure which irradiates the electron which passed the grid electrode to gas, plasmifies, and processes a board | substrate is disclosed.

  In such a configuration, since the substrate is disposed below the grid electrode, a uniform electric field is not formed immediately above the substrate, and the energy distribution due to collisional scattering of electrons increases. Furthermore, since arc discharge is used as the plasma source, there is a problem in that the electron density of the plasma source is distributed, and a uniform amount of electrons cannot be irradiated onto the substrate. In addition, in low voltage acceleration of 100 V or less, it is difficult to obtain a sufficient dose for the sample due to the inflow of electrons to the grid electrode.

  This invention is made | formed in view of such a point, It aims at providing the substrate surface heating apparatus excellent in controllability, and its heating method regarding the heat processing of a substrate surface.

  In the present invention, in order to solve the above-described problem, in a substrate surface heating apparatus that heats the substrate surface by irradiating the substrate surface with accelerated electrons, gas is discharged between the electrodes arranged in a vacuum vessel, Electron generating means for generating electrons, bias applying means for applying a DC bias to the electrodes and the substrate to irradiate the electrons on the surface of the substrate installed in the vacuum vessel, and the irradiated electrons There is provided a substrate surface heating apparatus, comprising: an irradiation control means for controlling the irradiation amount of the electrons to the substrate by reading the amount of the current as a current value and integrating the current value.

  In the present invention, in the substrate surface heating method of irradiating the substrate surface with accelerated electrons to heat the substrate surface, gas is discharged between the electrodes arranged in the vacuum vessel, and electrons are generated between the electrodes. A step of applying a DC bias to the electrode and the substrate to irradiate the surface of the substrate placed in the vacuum vessel with the electrons, and reading the amount of the irradiated electrons as a current value, And a step of controlling the irradiation amount of the electrons to the substrate by integrating the values.

  In these substrate surface heating apparatuses and substrate surface heating methods, gas is discharged between the electrodes arranged in the vacuum vessel, and electrons are generated between the electrodes. A DC bias is applied to the electrode and the substrate placed in the vacuum vessel, and electrons are accelerated in a DC electric field generated by applying the DC bias, and are irradiated onto the surface of the substrate. Then, the amount of electrons irradiated onto the substrate is controlled by reading the amount of irradiated electrons as a current value and integrating the current values.

  In the present invention, in the substrate surface heating apparatus and the substrate surface heating method, gas is discharged between the electrodes arranged in the vacuum vessel, and electrons are generated between the electrodes. A DC bias was applied to the electrode and the substrate placed in the vacuum vessel, and electrons were accelerated in a DC electric field generated by applying the DC bias, and the surface of the substrate was irradiated. Then, the amount of electrons irradiated is read as a current value, and the amount of electrons irradiated onto the substrate is controlled by integrating the current value.

  Accordingly, in the substrate surface heating apparatus and the heating method for irradiating the substrate surface with accelerated electrons to heat the substrate surface, the substrate surface heating apparatus having excellent controllability with respect to the depth and surface temperature to be heated and the heating thereof Realization of the method becomes possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
First, the first embodiment will be described.
FIG. 1 is a schematic cross-sectional view of an essential part for explaining the basic structure of a substrate surface heating apparatus.

  The substrate surface heating device 10 is a single-wafer type device, and a counter electrode 12 is disposed on an upper portion of a vacuum vessel 11. A power source 13 is connected to the counter electrode 12, and gas is discharged by the counter electrode 12 to generate electrons in the vacuum container 11. A plasma reference power supply 14 that is a DC power supply is connected to the power supply 13, and the plasma space potential can be adjusted by the plasma reference power supply 14. The vacuum vessel 11 is grounded. The power source 13 may be either a DC power source or an AC power source.

A gas inlet 15 for supplying a discharge gas into the vacuum vessel 11 and a gas exhaust port 16 for exhausting the gas are provided on the side of the vacuum vessel 11.
A substrate support 17 is installed below the vacuum vessel 11, and a substrate 18 is installed on the substrate support 17. The substrate support 17 is connected to a substrate bias power source 19 so that a DC bias can be applied to the substrate 18. Specifically, a DC bias is applied to the substrate support 17 so that the substrate 18 is at a positive potential with respect to the plasma space potential. Further, for example, a metal pipe capable of flowing a refrigerant from a resistance superheater heater or a chiller is embedded in the substrate support base 17, so that the temperature of the entire substrate 18 is controlled to be above or below room temperature as necessary. be able to. A shutter 20 is installed on the substrate 18.

  An ammeter 21 is provided between the substrate bias power source 19 and the ground. The current value measured and read by the ammeter 21 is transmitted to the controller 22 via the signal path. Then, the controller 22 transmits a control signal to the plasma reference power source 14, the substrate bias power source 19, and the shutter 20 based on the integrated amount of the received current value, and controls the plasma reference potential, the substrate bias, and the shutter state. To do.

Next, a method for irradiating the substrate 18 with electrons and controlling the heating depth and surface temperature will be described.
FIG. 2 is a flowchart illustrating a method for controlling the substrate surface temperature.

The depth and surface temperature for heating the substrate 18 are controlled by changing the irradiation time of electrons irradiated on the surface of the substrate and directly measuring the irradiation amount.
First, with the shutter 20 closed, for example, Ar (argon) gas, which is a rare gas, is introduced from the gas inlet 15 as a discharge gas. And Ar gas is exhausted from the gas exhaust port 16 so that the atmosphere in the vacuum vessel 11 can be maintained at a predetermined pressure. For example, Ar gas is introduced and exhausted so that the pressure in the Ar atmosphere is 30 Pa.

  A DC voltage of 400 V is applied from the power source 13 to the counter electrode 12 to discharge Ar gas, to generate low-temperature plasma between the counter electrodes 12, and to generate electrons in the vacuum vessel 11 (step S1).

  Regarding the plasma discharge conditions, the gas type, pressure, and discharge voltage are fixed in order to ensure the stability of the discharge. In the substrate surface heating apparatus 10, the distance from the plasma center to the substrate surface is 45 cm, for example. Then, the target heating depth and surface temperature are input to the controller 22.

  Next, the bias values of the substrate bias power supply 19 and the plasma reference power supply 14 are determined by the calculation in the controller 22 based on the database stored in the calculation unit of the controller 22 from the input heating depth and surface temperature. The

These bias values are converted into control signals, and the substrate bias power source 19 and the plasma reference power source 14 are controlled by the control means.
A direct current bias is applied to the counter electrode 12 and the substrate 18 in order to irradiate the surface of the substrate 18 installed in the vacuum vessel 11 with electrons (step S2).

  That is, by adjusting the plasma space potential by the plasma reference power source 14 and the DC bias of the substrate 18 by the substrate bias power source 19, a DC electric field is formed so that the substrate 18 becomes a positive potential with respect to the plasma space potential.

  Then, under the condition that the substrate 18 is positive with respect to the plasma space potential, electrons in the plasma are accelerated toward the substrate 18 (step S3). Here, the electrons incident on the substrate 18 have energy accelerated by the potential difference (potential difference between the plasma space potential and the substrate bias potential).

  Then, the shutter 20 is opened, and the surface of the substrate 18 is irradiated with electrons. All the irradiated electron quantities are measured by the ammeter 21 as current values, and the irradiation quantities are integrated in the controller 22.

  The database in the controller 22 stores the relationship between the electron irradiation accelerated by a predetermined potential difference, the predetermined heating depth, and the surface temperature. Then, while integrating the electron irradiation amount (current value × irradiation time), the substrate bias power source 21 and the plasma reference power source 14 are turned off or the shutter is closed when the target temperature is reached. That is, the irradiation amount to the substrate 18 of electrons accelerated by a predetermined potential difference is controlled (step S4).

FIG. 3 is a diagram for explaining the relationship between electron irradiation conditions, heating depth and surface temperature.
In this figure, the heating depth (heating region) and the surface temperature were calculated by simulation for the irradiation conditions of 1 to 4. In the calculation, the surface temperature was calculated on the assumption that all the energy of the irradiated electrons was converted into heat at the depth of heating. The temperature of the entire substrate was set to room temperature to simplify the calculation. The current was obtained by actual measurement. The data shown in FIG. 3 is an example of a database stored in the calculation unit of the controller 22, and irradiation condition data other than this data is stored in the controller 22.

From this figure, when the potential difference is +10 V (substrate bias power supply +10 V with respect to the plasma space potential), when the surface of the substrate 18 is irradiated with electrons at a current value of 13 μA / cm ² for 1.5 seconds, the electron irradiation amount As the temperature increases, the heated depth is 2 nm, and the surface of the substrate 18 rises from 25 ° C. to 541 ° C. In the irradiation for 3.0 seconds, the heating depth is 2 nm and the surface of the substrate 18 rises from 25 ° C. to 1050 ° C. as the electron irradiation amount increases.

In addition, when the potential difference is + 15V, when the surface of the substrate 18 is irradiated with electrons at a current value of 17 μA / cm ² for 0.4 seconds, the heating depth is 1 nm as the electron irradiation amount increases. The surface of the substrate 18 rises from 25 ° C. to 599 ° C. With 0.8 second irradiation, the heating depth is 1 nm and the surface of the substrate 18 rises from 25 ° C. to 1170 ° C. as the electron irradiation amount increases.

  Then, as described above, when the heating temperature reaches the target temperature, the substrate bias power source 19 and the plasma reference power source 14 are turned off or the shutter is closed. That is, the heating depth and the surface temperature can be controlled by measuring the irradiation amount of electrons accelerated by a predetermined potential difference.

  According to such a method, since a direct current electric field is formed between the plasma source and the substrate surface, and the irradiation amount of electrons accelerated by a predetermined potential difference is directly measured by an ammeter, Depth and surface temperature can be accurately controlled. In particular, even if slight fluctuations occur in the plasma state and fluctuations occur in the electron density in the plasma, the irradiation amount of electrons accelerated by a predetermined potential difference is directly measured by an ammeter, so atomic layer order The heating depth and surface temperature can be accurately controlled.

Next, a second embodiment will be described. In the description of the second embodiment, the same elements as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
FIG. 4 is a schematic cross-sectional view of an essential part for explaining a modification of the substrate surface heating apparatus.

  Control of the depth and surface temperature at which the substrate 18 is heated can be achieved by changing the passing distance of electrons irradiated on the surface of the substrate by selecting at least one of the bypass lines 23a, 23b and 23c, and directly changing the irradiation amount. Control by weighing into. This control utilizes the property that the ionized electron density near the substrate 18 decreases and the amount of electrons incident on the substrate 18 decreases as the distance as the bypass line increases.

  In the substrate surface heating device 30, a plurality of bypass lines 23 a, 23 b, and 23 c are provided on the side of the vacuum vessel 11 in addition to the elements of the members shown in FIG. 1. In addition, a bulb 24 that separates the upper and lower parts of the vacuum vessel 11 is provided in the middle of the vacuum vessel 11 and is closed during discharge. A gas exhaust port 25 for exhausting the gas in the vacuum vessel 11 is provided at the lower portion of the vacuum vessel 11.

An ammeter 21 is provided between the substrate bias power source 19 and the ground, and the current value measured by the ammeter 21 is transmitted to the controller 22 via the signal path.
Based on the received current value, the controller 22 transmits a control signal to the plasma reference power supply 14, the substrate bias power supply 19, and the shutter 20, and controls the plasma reference potential, the substrate bias, and the shutter state. Further, the controller 22 transmits a control signal to the plurality of bypass lines 23a, 23b, and 23c, and at least one of the plurality of bypass lines 23a, 23b, and 23c is selected.

Next, a method for irradiating the substrate 18 with electrons and controlling the heating depth and surface temperature will be described.
First, Ar gas that is a rare gas, for example, is introduced from the gas inlet 15 as a discharge gas while the shutter 20 is closed. Ar gas is exhausted from the gas exhaust port 16 so that the atmosphere in the vacuum vessel 11 can be maintained at a predetermined pressure. For example, Ar gas is introduced and exhausted so that the pressure in the Ar atmosphere is 30 Pa.

  A DC voltage, for example, 400 V is applied from the power source 13 to the counter electrode 12 to discharge Ar gas, and for example, low temperature plasma is generated between the counter electrodes 12 to generate electrons. Here, with respect to the plasma discharge conditions, the gas type, pressure, and discharge voltage are fixed in order to ensure the stability of the discharge. Then, the target heating depth and surface temperature are input to the controller 22.

  Next, based on a database stored in the controller 22 based on the input heating depth and surface temperature, the bias values of the substrate bias power supply 19 and the plasma reference power supply 14, irradiation time, and bypass are calculated by the calculation in the controller 22. At least one of the lines 23a, 23b, 23c is determined. Here, even when the same bias value and the same irradiation time are used, when the bypass line 23c is selected, the electron density decreases and the surface temperature is lower when the bypass line 23c is selected because the distance is longer. Can be controlled.

The bias value is converted into a control signal, and the substrate bias power source 19 and the plasma reference power source 14 are controlled by the control means.
A direct current bias is applied to the counter electrode 12 and the substrate 18 in order to irradiate the surface of the substrate 18 installed in the vacuum vessel 11 with electrons.

  That is, by adjusting the plasma space potential by the plasma reference power source 14 and the bias of the substrate 18 by the substrate bias power source 19, the substrate 18 becomes positive with respect to the plasma space potential. Then, when the substrate 18 is at a positive potential with respect to the plasma space potential, electrons in the plasma are accelerated toward the substrate 18 through at least one of the bypass lines 23a, 23b, and 23c. The electrons incident on the substrate 18 have energy accelerated by the potential difference (potential difference between the plasma space potential and the substrate bias potential).

  Then, the shutter 20 is opened, the electrons irradiated on the surface of the substrate 18 through at least one of the bypass lines 23a, 23b, and 23c are measured by the ammeter 21 as a current value, and the irradiation amount is integrated in the controller 22. The

  The database of the calculation unit in the controller 22 stores the relationship between the electron irradiation accelerated by the potential difference, the heating depth, the surface temperature, and the distance between the counter electrode 12 and the substrate 18 (bypass line). Then, while integrating the electron irradiation amount (current value × irradiation time), when the target temperature is reached, the substrate bias power source 19 and the plasma reference power source 14 are turned off or the shutter is closed.

FIG. 5 is a diagram for explaining the relationship between electron irradiation conditions, heating depth, and surface temperature.
As shown in this figure, when the potential difference is +15 V (substrate bias power supply +15 V with respect to the plasma space potential), when any of the bypass lines is selected, the current value by electron irradiation at 23 a is 1 μA / cm ² , 23 b Assuming 0.5 μA / cm ² at 25 ° C. and 0.25 μA / cm ² at 23c, a region 1 nm deep from the surface is heated from 25 ° C. to 850, 450 and 250 ° C., respectively, by electron irradiation for 10 seconds. The

  According to such a method, the surface of the substrate 18 is selected by selecting at least one of the bypass lines 23a, 23b, and 23c in a state where the plasma discharge conditions, for example, the type of gas, the pressure, and the discharge voltage are fixed. It is possible to control the depth of heating and the surface temperature by changing the electron density reaching the temperature.

  That is, the passage of electrons from the counter electrode 12 to the surface of the substrate 18 can be performed by selecting any of the bypass lines 23a, 23b, and 23c while maintaining the same discharge conditions without changing the plasma discharge conditions. By changing the distance, the electron density reaching the surface of the substrate 18 can be changed, and the heating depth and surface temperature can be controlled.

Next, a third embodiment will be described. In the description of the third embodiment, the same elements as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
FIG. 6 is a schematic cross-sectional view of an essential part for explaining a modification of the substrate surface heating apparatus.

  The depth and surface temperature of the substrate 18 are controlled by moving the position of the substrate support 17 to change the passing distance of electrons irradiated on the surface of the substrate and directly measuring the irradiation amount. Control. In this control, the longer the distance between the plasma source and the substrate 18, the higher the frequency of collision of electrons with the inner wall of the vacuum vessel 11 and the lower the density of electrons incident on the substrate 18.

In this substrate surface heating device 40, the substrate support 17 can be moved up and down in addition to the elements shown in FIG.
An ammeter 21 is provided between the substrate bias power source 19 and the ground, and the current value measured by the ammeter 21 is transmitted to the controller 22 via the signal path.

  Based on the received current value, the controller 22 transmits a control signal to the plasma reference power source 14, the substrate bias power source 19, and the shutter 20 to control the plasma reference potential, the substrate bias, and the state of the shutter 20. Furthermore, the controller 22 can transmit a control signal to the substrate support base 17 to control the vertical position thereof.

Next, a method for irradiating the substrate 18 with electrons and controlling the heating depth and surface temperature will be described.
First, Ar gas that is a rare gas, for example, is introduced from the gas inlet 15 as a discharge gas while the shutter 20 is closed. Ar gas is exhausted from the gas exhaust port 16 so that the atmosphere in the vacuum vessel 11 can be maintained at a predetermined pressure. For example, Ar gas is introduced and exhausted so that the pressure in the Ar atmosphere is 30 Pa.

  A DC voltage of 400 V is applied from the power source 13 to the counter electrode 12 to discharge Ar gas, and for example, low temperature plasma is generated between the counter electrodes 12 to generate electrons. Here, with respect to the plasma discharge conditions, the gas type, pressure, and discharge voltage are fixed in order to ensure the stability of the discharge. Then, the target heating depth and surface temperature are input to the controller 22.

  Next, based on a database stored in the controller 22 based on the input heating depth and surface temperature, the bias values of the substrate bias power source 19 and the plasma reference power source 14, the irradiation time, the substrate, and the like are calculated in the controller 22. 18 positions in the vertical direction are determined. Here, even with the same bias value and the same irradiation time, the longer the plasma source and the substrate 18, the lower the electron density and the lower the surface temperature.

The bias value is converted into a control signal, and the substrate bias power source 19 and the plasma reference power source 14 are controlled by the control means.
A direct current bias is applied to the counter electrode 12 and the substrate 18 in order to irradiate the surface of the substrate 18 installed in the vacuum vessel 11 with electrons.

  That is, by adjusting the plasma space potential by the plasma reference power source 14 and the bias of the substrate 18 by the substrate bias power source 19, the substrate 18 becomes positive with respect to the plasma space potential. When the substrate 18 is at a positive potential with respect to the plasma space potential, electrons in the plasma accelerate toward the substrate 18. Here, the electrons incident on the substrate 18 have energy accelerated by the potential difference (potential difference between the plasma space potential and the substrate bias potential).

Then, the shutter 20 is opened, the electrons irradiated on the surface of the substrate 18 whose position is fixed are measured by the ammeter 21 as a current value, and the irradiation amount is integrated in the controller 22.
The database in the controller 22 stores the relationship between the electron irradiation amount accelerated by the potential difference, the heating depth, the surface temperature, and the passing distance (the distance between the plasma source and the substrate). Then, while integrating the electron irradiation amount (current value × irradiation time), when the target temperature is reached, the substrate bias power supply 19 and the plasma reference power supply 14 are turned off or the shutter 20 is closed.

FIG. 7 is a diagram for explaining the relationship between electron irradiation conditions, heating depth, and surface temperature.
As shown in this figure, when the potential difference is +15 V, the electron density decreases with increasing distance from the plasma electrode as described above when the distance between the counter electrode 12 and the substrate 18 is 50, 45, and 40 cm. the current due to irradiation respectively ^{2μA / cm 2, 1μA / cm} 2, assuming 0.5 .mu.A / cm ^2, an electron irradiation for 5 seconds, a region of depth 1nm from the surface, respectively, from room temperature 25 ℃ 850,450 , Heated to 250 ° C.

  According to such a method, the density of electrons reaching the surface of the substrate 18 is changed by moving the position of the substrate 18 in a state where the plasma discharge conditions, for example, the type of gas, pressure, and discharge voltage are fixed. And the heating depth and surface temperature can be controlled.

  That is, the position of the substrate 18 is moved while maintaining the same discharge conditions without changing the plasma discharge conditions, and the passage distance of electrons from the counter electrode 12 to the surface of the substrate 18 is changed to thereby change the substrate. The electron density that reaches the surface of 18 can be changed, and the heating depth and surface temperature can be controlled.

  In the above description, in order to specifically control the substrate 18 to be positive with respect to the plasma space potential, the potential difference of the substrate 18 with respect to the plasma space potential is changed, and the characteristics of the potential difference and current are measured. To do.

  For example, when the current measured by the ammeter 21 is 0 (A), the plasma space potential and the potential of the substrate 18 are equipotential. On the other hand, when a negative current flows, the potential of the substrate 18 becomes a positive potential with respect to the plasma space potential. Then, the potential difference and current characteristics are measured, and a predetermined potential difference is determined by adjusting the plasma reference power source 14 and the substrate bias power source 19. By such a method, the plasma space potential and the potential difference between the substrate 18 can be accurately obtained.

  Further, the substrate surface heating devices 10, 30, and 40 use the capacitively coupled counter electrode 12 as an electrode for plasma discharge, but the shape of the electrode is not limited to the capacitively coupled type. But you can.

The first, second, and third embodiments may be a combination of a plurality of embodiments. Thereby, the depth of heating and the surface temperature can be controlled more accurately.
(Supplementary note 1) In a substrate surface heating apparatus that heats the substrate surface by irradiating the substrate surface with accelerated electrons,
An electron generating means for discharging gas between electrodes arranged in a vacuum vessel and generating electrons between the electrodes;
A bias applying means for applying a DC bias to the electrode and the substrate in order to irradiate the surface of the substrate placed in the vacuum container with the electrons;
An irradiation control means for controlling the irradiation amount of the electrons to the substrate by reading the amount of the irradiated electrons as a current value and integrating the current value;
A substrate surface heating apparatus comprising:

  (Supplementary note 2) The substrate surface heating apparatus according to supplementary note 1, wherein a depth of the substrate surface heated by irradiating the surface of the substrate placed in the vacuum vessel with the electrons is 1 to 2 nm. .

  (Supplementary note 3) The irradiation control means for controlling the irradiation amount of the electrons to the substrate is a means for controlling by changing the passing distance of the electrons from the electrode to the surface of the substrate. The substrate surface heating apparatus according to Supplementary Note 1 or 2, wherein:

  (Additional remark 4) About the means to control by changing the passage distance of the said electron, the means to control by selecting at least one of several bypass lines in the side part of the said vacuum vessel, or a board | substrate support stand up and down The apparatus for heating a substrate surface according to supplementary note 3, which is means for controlling by moving the substrate surface.

  (Supplementary note 5) The substrate surface heating according to any one of supplementary notes 1 to 4, wherein the irradiation control means for controlling the irradiation amount of the electrons to the substrate controls the irradiation amount according to an irradiation time. apparatus.

(Supplementary Note 6) In the substrate surface heating method of heating the substrate surface by irradiating the substrate surface with accelerated electrons,
Discharging a gas between electrodes arranged in a vacuum vessel to generate electrons between the electrodes;
Applying a DC bias to the electrode and the substrate to irradiate the surface of the substrate placed in the vacuum vessel with the electrons;
Reading the amount of the irradiated electrons as a current value, and controlling the irradiation amount of the electrons to the substrate by integrating the current value;
A substrate surface heating method characterized by comprising:

  (Supplementary note 7) The substrate surface heating method according to supplementary note 6, wherein a depth of the substrate surface heated by irradiating the surface of the substrate placed in the vacuum vessel with the electrons is 1 to 2 nm. .

  (Supplementary Note 8) The step of controlling the irradiation amount of the electrons to the substrate is a step of controlling by changing a passing distance of the electrons from the electrode to the surface of the substrate. 8. The substrate surface heating method according to 6 or 7.

  (Supplementary Note 9) In the case of controlling by changing the electron passage distance, the step of controlling by selecting at least one of a plurality of bypass lines on the side of the vacuum vessel or the substrate support table moves up and down 9. The method of heating a substrate surface according to appendix 8, wherein the step of controlling is performed.

  (Supplementary note 10) The substrate surface heating method according to any one of supplementary notes 6 to 9, wherein in the step of controlling the irradiation amount of the electrons to the substrate, the irradiation amount is controlled by an irradiation time.

It is a principal part cross-sectional schematic diagram explaining the basic structure of a substrate surface heating apparatus. It is a flowchart explaining the method of controlling a substrate surface temperature. It is a figure explaining the relationship between electron irradiation conditions, the depth of heating, and surface temperature (the 1). It is a principal part cross-sectional schematic diagram explaining the modification of a substrate surface heating apparatus (the 1). It is a figure explaining the relationship between electron irradiation conditions, the depth of heating, and surface temperature (the 2). It is a principal part cross-sectional schematic diagram explaining the modification of a substrate surface heating apparatus (the 2). It is a figure explaining the relationship between electron irradiation conditions, the depth of heating, and surface temperature (the 3).

Explanation of symbols

10, 30, 40 Substrate surface heating device 11 Vacuum vessel 12 Counter electrode 13 Power source 14 Plasma reference power source 15 Gas introduction port 16, 25 Gas exhaust port 17 Substrate support stand 18 Substrate 19 Substrate bias power source 20 Shutter 21 Ammeter 22 Controller 23a, 23b, 23c Bypass line 24 Valve

Claims (5)

In the substrate surface heating apparatus that irradiates the substrate surface with accelerated electrons and heats the substrate surface,
An electron generating means for discharging gas between electrodes arranged in a vacuum vessel and generating electrons between the electrodes;
A bias applying means for applying a DC bias to the electrode and the substrate in order to irradiate the surface of the substrate placed in the vacuum container with the electrons;
An irradiation control means for controlling the irradiation amount of the electrons to the substrate by reading the amount of the irradiated electrons as a current value and integrating the current value;
A substrate surface heating apparatus comprising:   2. The irradiation control means for controlling the irradiation amount of the electrons to the substrate is a means for controlling by changing the passing distance of the electrons from the electrode to the surface of the substrate. The substrate surface heating apparatus as described.   With respect to the means for controlling by changing the electron passage distance, the means for controlling by selecting at least one of a plurality of bypass lines on the side of the vacuum vessel or the substrate support is moved up and down. 3. The substrate surface heating apparatus according to claim 2, wherein the substrate surface heating apparatus is a control means.   4. The substrate surface heating apparatus according to claim 1, wherein the irradiation control unit that controls the irradiation amount of the electrons to the substrate controls the irradiation amount according to an irradiation time. 5. In the substrate surface heating method of heating the substrate surface by irradiating the substrate surface with accelerated electrons,
Discharging a gas between electrodes arranged in a vacuum vessel to generate electrons between the electrodes;
Applying a DC bias to the electrode and the substrate to irradiate the surface of the substrate placed in the vacuum vessel with the electrons;
Reading the amount of the irradiated electrons as a current value, and controlling the irradiation amount of the electrons to the substrate by integrating the current value;
A substrate surface heating method characterized by comprising:

Images