573442 玖、—明說明 (發明δ兌明應敘明：發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明) 一、發明所屬之技術領域 本發明係關於一種離子佈植機電漿溢出腔室孔徑之 控制方法，尤指一種可依實際狀況調整之電漿溢出腔室 孔徑控制方法。 一、尤丽技術573442 明, —Explanation (Invention δ should be stated: the technical field, prior art, content, implementation, and drawings of the invention are briefly explained) 1. Technical field to which the invention belongs The present invention relates to an ion implantation machine A method for controlling the hole diameter of a plasma overflow chamber, especially a method for controlling the hole diameter of a plasma overflow chamber which can be adjusted according to actual conditions. I. Uli Technology
離子佈植在現今積體電路製造上扮演相當重要的 色。所謂離子佈植，是將欲摻雜之原子或分子，轉變 帶電離子束，通常帶正電，並經由一加速過程獲取能量 射入矽阳圓，以形成Ρ_Ν接合面、調整元件工作條件或 變基材結構。然而，在離子佈植時，被佈植的把材不i t接受，荷；當靶材為絕緣體或非良導體(如矽晶厦 y電何會累積絲材表面，此電荷累積會傷害該絕# :=性，甚至造成崩潰，如破壞聰間極氧化心Ion implantation plays a very important role in today's integrated circuit manufacturing. The so-called ion implantation is to convert the atom or molecule to be doped into a charged ion beam, which is usually positively charged, and acquires energy through an accelerated process to enter the silicon sun circle to form a P_N junction, adjust the working conditions of the component, or change Substrate structure. However, during ion implantation, the implanted handles do not accept it. When the target is an insulator or a non-conducting conductor (such as how silicon crystals accumulate on the surface of the wire, this charge accumulation will harm the insulator. #: = Sex, and even cause collapse, such as destroying Satama extreme oxidation heart
::、心離Γ卜’㈣影響離子束的傳輪，改變其… 直機^ 劑量的不均勻般在離B 植枝：都配備有電荷令和的機制，如第1圖所示。 植機凊第1圖，請係習知技藝中所使用之離子句 植機，包含一植入離子束產 隹十啊 子束115，i访跳 σσ ，以產生欲佈植之_ 溢出腔室120,可產生電子以及-電子束電聚 器no所產生㈣旦正中和植人離子束產生 有一可％敕4 里私何，其中該電漿溢出腔室120罝 有可-整式開口125,可依使 ⑽具 小。在傳饼制妒忐^ 可而求凋正其孔徑大 在傳、、先製私中，欲進行離子佈植時’係先進行多次 6 573442 測試，決定最佳的植入離子束流量以及電子束流量並 由該流量推算回最佳的電子束電聚溢出腔室孔洞125之 口大小。之後便固定此孔徑大小與植入離子束之流 量’置放上晶圓樣本進行離子佈植。但實際操作時發現， »亥中彳用之電子束"IL i會隨時間而衰減，此種波動會導 致離子佈植時，晶圓上累積過多的正電荷，而造成元件 結構上的破壞。尤其是目前半導體製程由⑽聰進步至 130㈣’在窄線寬的製作過程中，此種問題更為突顯， 會嚴重影響離子佈植之良率。因此，目前市場上相當需 要一種新的方法，能解決上述中和用之電子束流量^減 或波動的情況，使離子佈植效果良好，進而提高晶圓製 三、發明内容 本發明之撫.诚 本發明之主要目的係在提供—種離子佈植機之電浆 ::腔室孔徑控制方法，俾能解決上述中和用之電子束 々丨•里衰減或波動的情況，即時調整該中和用之電子束， 改善離子佈植效果’進而提高晶圓之良率。 為達成上述之目的’本發明―種電襞溢出腔室孔徑 之控制方法，係配合—離子佈植機使用，其中該離子佈 植機包含-植人離子束（iGnbeam)產生單元，一中和用 電漿溢出單元（n敵alizing pla_ flQQd她），—偵測單 元，以及一回饋控制單元；該中和用電漿溢出 llZmgfl〇〇d)單元具有至少—電渡溢出腔 7 573442 至’且β 4桌溢出腔至之出口孔徑大小係由該回饋控制 單元控制；其控制方法主要包含下列步驟··（4該回饋控 制單元接收一對應於該電漿溢出腔室孔徑尺寸之植入離 子束流量（ion beam current)與中和用電子束流量 ’ (emission current)之起始比值及一預設電漿溢出腔室之 起始孔徑，且該回饋控制單元並將該電漿溢出腔室之孔 徑設定為該起始孔徑；（b)由該偵測單元偵測該中和用 電子束之實際流量，並將該中和用電子束實際流量回傳 至該回饋控制單元；以及（c)該回饋控制單元依據該中和 用電子束實際流量計算實際之植入離子束流量與中和用 電子束流量之實際比值，並調整該電漿溢出腔室孔徑， 使該實際比值符合該起始比值。 由於本务明確有增進功效，故依法申請發明專利。 發明詳細説明 本發明「電漿溢出腔室孔徑之控制方法」，係配合一 離子佈植機制，所使耗離子佈值機除了包含上述的 /> 四2元：（1)植入離子束（ion beam)產生單元，（2)中和用 電漿溢出（neutralizing plasma fl〇〇d)單元，⑺债測單元， 以及（4)回饋控制單元之外，更可包含一（5)工作單元， 以供晶圓置放並進行離子佈植之用；紅作單元通常為 二轉輪機構，可置放—個或複數個晶圓。本發明之债測 單几車乂仏包含一中和用電子束流量感測器，更佳為包 含:中和用電子束流量感測器以及—植人離子束流量感 測益；其中該感測器係與該回饋控制單元相連結。本發 8 573442 微處理 明之回饋控制單元較佳係包含一回饋電路、 器，以及一孔徑控制機構。 本發明「電II溢出腔室孔徑之控制方法」，包含下列 方法· —⑻相饋控制單元接收—對應於該電漿溢出腔室 =徑尺植入離子束流量（i〇n beam 叫與中和用 電子束流量（emission current)之起始比值及一預設電聚 溢出腔室之起始孔徑，且該回饋控制單元並將該電聚溢 出腔至之孔控設定為該起始孔徑； 旦偵測單元债測該中和用電子束之實際流 置：亚將5亥中和用電子束實際流量回傳至該回饋控制單 元，以及 該回饋控制單元依據該中和㈣子束實際流量 计异貫際之植入離子束流量與中和用電子束流際 :值’並調整該電聚溢出腔室孔徑，使該實際比值符： 5亥起始比值。 :中’該中和用電子束之行進方向係穿透植入離子 束之某-區域’以中和該植入離子束中過多之正電荷。 上述之控财法較佳更包含在進行上述步驟 途行下列步驟： 尤 ⑻測試各種植人離子束流量（iQn beam _㈣ 之景;:電:Γ 一1 °ncurrent)對於晶圓離子佈植 、'“⑽挑選-最適當條件’由此推知當時植入離子束 q(_beamcurrent)與中和用電子束流量㈣sslon 9 573442 current)之比值 單元中。 並將該比值作為預設值輸入 該回饋控制 料：佳的情？為’本發明之控制方法包含-步驟⑷， 雄Γ “子束流量維持穩定後，將晶圓置人社作單元中 進行離子佈植。此外，±述之 子束·ί二： 生植入離子束以及中和用電 旦束：亚視$要地由㈣單元㈣植人離子束之實際流 牛驟字：:ί入離子束實際流量回傳至該回饋控制單元之 二固測單權方式無限制，較佳為每隔 口疋守間偵測一次，進而使本發明之控 為依時間調整電漿溢出腔室孔徑之控制方法。Ζ 四、實施方式 為能讓貴審查委員能更瞭解本發明之技術内容，特 舉下列各較佳具體實施例說明如下。 宜旌例1 離子佈梢機 本實施例所使用之離子佈植機係包含下列四單元·· ⑴植入離子束（ion beam)產生單元，⑺中和用電聚溢出 (neutralizing plasma fl〇od)單元，（3)偵測與回饋控制單 元’以及（4)離子佈植工作單元。 明參如、第2圖，上述之植入離子束（丨〇11 beam)產生單 元·210包含一離子源，以及一離子加速器，以產生足夠動 量與能量之植入離子束215。該中和用電漿溢出單元包含 一電漿溢出腔室220，以及一電子束引導管（guide 573442 tube)226’係用於產生中和用電子束23〇，並使其通過植 入離子束之某一區域，以中和該植入離子束中過多之正 電荷。 該债測單元包含—❹m中和用電子束流量之偵測 器260，以及一感測該佈植離子束流量之偵測器280。、該 回饋控制單元包含一回饋電路270、一微處理器275，以 及一孔徑控制機構（圖上未顯示）。其中該回饋電路270盘 該與微處理器275相連結，該微處理器275係與該孔徑控 制機構相連結，而該孔徑控制機構係與電漿溢出腔室之 出228相連結，藉此控制該電漿溢出腔室出口 2M之孔 徑大小。該離子佈植工作單元包含一工作區25〇以及一轉 輪機構（圖上未顯示），該轉輪機構可置放複數個晶圓 240，並將其移出或移入該工作區25〇内。 上述工作區250内之晶圓240係位於可承接由離子束 產生严210打出之離子束215之方向上，該電漿溢出腔室 220係與該離子束產生器21〇呈垂直置放，該回饋控制單 元270同日可與該偵測器26〇、28〇以及該電漿溢出腔室出口 228相連結。該回饋控制單元270係以一微處理器275建立 各項資料，並控制該電漿溢出腔室出口 228孔徑大小。 溢出輩开. 一般電漿溢出單元主要包含三部份··電漿來源、低 月b虽私子產生裔以及電子束引導裝置。本實施例之電漿 /益出單7L所使用之電漿來源為氬氣，電子產生器為線圈 222，電子束引導裝置為引導管226。其構造上主要包括 11 573442::, Xin Li Γ ㈣ ㈣ ㈣ affects the transfer of the ion beam, changing it ... Straight ^ The uneven dose is planted in Li B: both are equipped with the mechanism of charge reconciliation, as shown in Figure 1. Implanting machine Figure 1. Please refer to the ion sentence implanting machine used in the conventional arts. It includes an implanted ion beam to produce the ten sub-beams 115 and σσ to generate the _ overflow chamber. 120, can produce electrons and-the electron beam ionizer no produced by the Danzhong center and the implanted ion beam to produce a small amount of 4%, where the plasma overflow chamber 120 has a possible-integral opening 125, can Make the tool small. In the cake-passing system, 孔径 忐 can be corrected, and its aperture is large. In the transmission, pre-production private, when you want to perform ion implantation, you should first perform multiple 6 573442 tests to determine the best implant ion beam flow rate and The flow rate of the electron beam is estimated from the flow rate and returns to the optimal opening size of the electron beam overflow chamber cavity 125. After that, the aperture size and the flux of the implanted ion beam are fixed, and a wafer sample is placed for ion implantation. However, in actual operation, it was found that the electron beam "IL i" used by Haizhong will decay with time. Such fluctuations will cause excessive positive charges to accumulate on the wafer during ion implantation, which will cause damage to the component structure. . In particular, the current semiconductor process has progressed from Satoshi to 130㈣ '. In the narrow line width manufacturing process, such problems are more prominent, which will seriously affect the yield of ion implantation. Therefore, there is a considerable need for a new method on the market that can solve the above-mentioned neutralization of the electron beam flow ^ reduction or fluctuation, so that the ion implantation effect is good, and then improve the wafer system III. SUMMARY OF THE INVENTION The present invention. The main purpose of the present invention is to provide a plasma control method of the ion implanter :: chamber aperture control method, which can solve the above-mentioned neutralization of the electron beam 々 里 decay or fluctuation, and immediately adjust the With the use of electron beams, the ion implantation effect is improved, and the yield of the wafer is improved. In order to achieve the above-mentioned object, the present invention-a method for controlling the hole diameter of an electroporation overflow chamber, is used in conjunction with an ion implanter, wherein the ion implanter includes a human implanted ion beam (iGnbeam) generating unit, which neutralizes Plasma overflow unit (n-alizing pla_flQQd),-detection unit, and a feedback control unit; the neutralization plasma overflow unit (llZmgfl0d) has at least-electro-overflow overflow chamber 7 573442 to 'and The exit aperture size of the β 4 table overflow chamber is controlled by the feedback control unit; the control method mainly includes the following steps ... (4 The feedback control unit receives an implanted ion beam corresponding to the size of the plasma overflow chamber aperture The initial ratio of the ion beam current to the electron beam current for neutralization (emission current) and a preset initial aperture of the plasma overflow chamber, and the feedback control unit sends the plasma overflow to the chamber. The aperture is set to the starting aperture; (b) the detection unit detects the actual flow of the electron beam for neutralization, and returns the actual flow of the electron beam for neutralization to the feedback control unit; and (c) The feedback control unit calculates the actual ratio of the actual implanted ion beam flow rate and the neutralization electron beam flow rate based on the actual flow rate of the neutralization electron beam, and adjusts the diameter of the plasma overflow chamber to make the actual ratio conform to the start Ratio. Due to the clear improvement of this task, the invention patent is applied for according to the law. Detailed description of the invention "the method for controlling the aperture of the plasma overflow chamber" of the present invention is matched with an ion implantation mechanism. The above / > four 2 yuan: (1) implanted ion beam (ion beam) generating unit, (2) neutralizing plasma flood unit, neutral debt measuring unit, and (4) ) In addition to the feedback control unit, a (5) working unit can be included for wafer placement and ion implantation; the red working unit is usually a two-wheel mechanism, which can place one or more crystals. The vehicle for measuring the debt of the present invention includes an electron beam flow sensor for neutralization, and more preferably includes: an electron beam flow sensor for neutralization, and a human implanted ion beam flow sensor; The sensor is related to the back The feedback control unit is connected. The feedback control unit of the present invention is preferably a feedback circuit, a device, and an aperture control mechanism. The "control method for the aperture of the electric II overflow chamber" of the present invention includes the following methods: —Receiving by the phase feedback control unit—corresponding to the plasma overflow chamber = the initial ratio of the ion implantation ion beam flow rate (i0n beam called and the neutralization electron beam current (emission current) and a preset voltage The initial aperture of the polymer overflow chamber, and the feedback control unit sets the hole control of the electro-polymer overflow chamber to the initial aperture; once the detection unit detects the actual flow of the neutralization electron beam: Asia The actual flow rate of the neutralization electron beam is returned to the feedback control unit, and the feedback control unit is based on the implanted ion beam flow rate of the neutralization electron beam flowmeter and the neutralization electron beam flow rate. : Value 'and adjust the hole diameter of the electropolymerization overflow chamber so that the actual ratio is: the starting ratio of 5 Hz. : Neutralization The traveling direction of the neutralizing electron beam is to penetrate a certain region of the implanted ion beam to neutralize the excessive positive charge in the implanted ion beam. The above financial control method preferably further includes the following steps in performing the above steps: In particular, test the ion beam flux of each planter (iQn beam _㈣ 景;: electricity: Γ-1 ° ncurrent) for wafer ion implantation, '"⑽Selection-the most appropriate conditions'" from this, it is inferred that the ratio unit of the implanted ion beam q (_beamcurrent) and the electron beam flow for neutralization ㈣sslon 9 573442 current) was inferred at the time. The ratio was entered as a preset value into the feedback control Material: Good condition? For the control method of the present invention includes-step ⑷, after the beam flux is maintained stable, the wafer is placed in a human society as a unit for ion implantation. In addition, the beam of the child described in the second paragraph: the implanted ion beam and the neutralization electron beam: ATV's actual flow of the ion beam implanted by the unit: the actual flow of the ion beam There is no limitation to the second solid measurement unitary method of returning to the feedback control unit, and it is preferable to detect it every other time, so that the control of the present invention is a control method for adjusting the diameter of the plasma overflow chamber according to time. Z. Implementation Modes In order for your review committee to better understand the technical content of the present invention, the following preferred embodiments are described below. Example 1 Ion cloth tipping machine The ion implanter used in this example includes the following four units: ⑴ Implanted ion beam (ion beam) generating unit, neutralizing plasma flood ) Unit, (3) detection and feedback control unit 'and (4) ion implantation work unit. As shown in Fig. 2, the above-mentioned implanted ion beam (01011 beam) generating unit 210 includes an ion source and an ion accelerator to generate an implanted ion beam 215 with sufficient momentum and energy. The neutralization plasma overflow unit includes a plasma overflow chamber 220 and an electron beam guide tube 573442 tube 226 'for generating an electron beam 23 for neutralization and passing it through the implanted ion beam. An area to neutralize the excess positive charge in the implanted ion beam. The debt measuring unit includes a detector 260 for neutralizing the electron beam flow and a detector 280 for sensing the implanted ion beam flow. The feedback control unit includes a feedback circuit 270, a microprocessor 275, and an aperture control mechanism (not shown in the figure). The feedback circuit 270 is connected to the microprocessor 275. The microprocessor 275 is connected to the aperture control mechanism, and the aperture control mechanism is connected to the plasma outflow chamber 228. The diameter of the 2M aperture of the plasma overflow chamber exit. The ion implantation work unit includes a work area 250 and a rotating mechanism (not shown in the figure). The rotating mechanism can place a plurality of wafers 240 and move them out of or into the working area 250. The wafer 240 in the working area 250 is located in a direction that can receive the ion beam 215 emitted by the ion beam 210. The plasma overflow chamber 220 is placed perpendicular to the ion beam generator 21. The feedback control unit 270 can be connected to the detectors 26 and 28 and the plasma overflow chamber outlet 228 on the same day. The feedback control unit 270 uses a microprocessor 275 to establish various data, and controls the size of the aperture of the plasma overflow chamber outlet 228. The overflow generation is on. The general plasma overflow unit mainly consists of three parts: the plasma source, the generation of the babies and the electron beam guiding device. In this embodiment, the plasma / Yingdan 7L plasma source is argon, the electron generator is the coil 222, and the electron beam guiding device is the guide tube 226. Its structure mainly includes 11 573442
一腔室220，該腔室220内置一線圈（filament) 222，一氣 體入口 224，以及一電子束引導管226。上述之線圈222為 習用之Bernas型線圈，亦即上述所稱之低能量電子產生 器，用以提供產生電漿所需能量；該腔室220具有一氣體 入口 224，以及一電漿出口 228。該電漿出口 228孔徑大小 係以回饋控制單元之孔徑控制機構控制。該電子束引導 管226位於離子束215之平行方向上，通常具有電極或磁 場，可吸引電子束穿透該植入離子束。 產生電漿時，係由氣體入口 224通入氬氣（Ar)，之後 於該線圈222通入電流，該氬氣流過該熾熱的線圈222 時，會激發出大量電子瀰漫於該腔室220中。此時可外加 一偏向正電壓，此偏向正電壓與該線圈222可提供足夠能 量，幫助氬氣大量游離，以產生電漿。腔室220中的電子 會因擴散作用而由該出口 228溢出該腔室220，再經由電 子束引導管226引導穿透離子束215，以中和該離子束中 過多之正電荷。A chamber 220 includes a coil 222, a gas inlet 224, and an electron beam guiding tube 226. The above-mentioned coil 222 is a conventional Bernas type coil, that is, the above-mentioned low-energy electron generator, which is used to provide the energy required for generating plasma; the chamber 220 has a gas inlet 224 and a plasma outlet 228. The diameter of the plasma outlet 228 is controlled by the aperture control mechanism of the feedback control unit. The electron beam guiding tube 226 is located in the parallel direction of the ion beam 215, and usually has an electrode or a magnetic field, which can attract the electron beam to penetrate the implanted ion beam. When plasma is generated, argon (Ar) is passed through the gas inlet 224, and then a current is passed through the coil 222. When the argon gas flows through the hot coil 222, a large number of electrons are excited to diffuse in the chamber 220. . At this time, a bias voltage can be applied. This bias voltage and the coil 222 can provide sufficient energy to help the argon gas to dissipate in large amounts to generate plasma. The electrons in the chamber 220 will overflow the chamber 220 through the outlet 228 due to diffusion, and then be guided through the ion beam 215 through the electron beam guide tube 226 to neutralize the excessive positive charge in the ion beam.
實施例3-4離子佈植條件選擇 利用如實施例1所述之離子佈植機，以及實施例2所 述之電漿產生條件進行各種不同條件之離子佈植，主要 變因為植入離子束之流量（beam current)與電子束流量 (emission current)，其結果如下表 1 : 12Example 3-4 ion implantation condition selection The ion implantation machine described in Example 1 and the plasma generation conditions described in Example 2 were used to perform ion implantation under various conditions, mainly due to the implantation of ion beams. Beam current and Emission current, the results are shown in Table 1 below: 12
丨73442 際流量之押制 本實施例係使用如實施例i所述之離子佈植機，以及 ^例2與實施例3之離子佈植條件進行離子佈植，並以 列方式控制電漿溢出腔室之出口孔徑大小： ⑴將實施例3中植入離子束流量（i〇n以⑽cu職〇 人中和用電子束流量(emisslon c職nt)之比值，建立於該 回饋控制單元之微處理器275中； (2) 啟動該離子束產生單元21〇以及中和用電漿溢 出單元220，以產生植入離子束215，以及中和用電子 230 ； (3) 由偵測器260偵測中和用電子束之實際流量，以 及由該偵測器280偵測該植入離子束215之流量，並將此 二者之實際流量回傳至該微處理器275申，得到一實際比 13 573442 (4) 該微處理器275係依據所建入之比值資料，下達 指令於該孔徑控制機構，調整該孔徑228大小，使流出的 中和用電子束實際流量符合該比值資料； (5) 待中和用電子束之實際流量維持穩定之後（亦即 孔徑大小維持穩定之後），利用轉輪將晶圓240移入工作 區250内，進行離子佈植。 以上述方式進行之離子佈植結果隨時間之變化如下 表3 : 表3電子束流量與離子佈植結果隨時間之改變 時間 Ii/Ie 離子佈植 情況 第1曰 0.7 佳 —--—---- 0.68 第3曰 0.67 第4曰 0.69 第5曰 ____ 0.67 ——^_ 上述結果可知，習知技藝中僅將早 口流量盥雷不击士曰， 值八離子束之出 /、子束之出口流量維持於定值，並無法完 14 573442 =掌^正的離子佈植情況，尤其是②略 過程中可能有的電子散失現象。事實上 了= 隨時間而有波動，因此習知 ，现里曰 有波動，無法精確控制，往往支;情況亦隨之 抨 ^ ^ „ 住仏成日日0上各元件受到破 权。而本發明利用-新賴的控制方法，將原本電子束杏 際流量的波動情況建立於一饋 戶、 制早凡_漿溢出腔室開口孔徑大小，以此方法補償 该電子束實際流量之波動，使電 禮—^ 使電子束的實際流量可維持 二：而達到母一批離子佈植狀況皆可精確掌握，進而 提幵晶圓離子佈植之良率。 綜上所陳，本發明無論就目的、手段及功效，在在 其迴異於習知技術之特徵，為「電漿溢出腔室孔 1控制方法」之-大突破，料早日賜准專利。惟庫 左思的是，上述諸多實施例僅係為了便於㈣而舉· =本發明所主張之權利範圍自應㈣請專利範圍所述 為準’而非僅限於上述實施例。 # 五、圖式簡單說明 第1圖係習知技藝中所使用之離子佈植機。 第2圖係本發明所使用之離子佈植機。 六·、圖號說明 110離子束產生器 120電漿溢出腔室 115植入離子束 125電漿出口 15 573442 130電漿（電子束） 150工作區 140晶圓 210離子束產生單元 215植入離子束（ion beam) 220電漿溢出腔室 2 2 2線圈 224氣體入口 226電子束引導管 228電漿出口 230 電子束（emission current) 240晶圓 250工作區 260電子束流量偵測器 270回饋線路 275微處理器 280植入離子流量偵測器 16丨 73442 International flow control This embodiment uses the ion implanter as described in Example i, and the ion implantation conditions of Example 2 and Example 3 to perform ion implantation, and control the plasma overflow in a column manner. The exit aperture size of the chamber: ⑴ The ratio of the implanted ion beam flow rate (i0n to ⑽cu and 〇person neutralization electron beam flow (emisslon c) nt) in Example 3 was established in the micro of the feedback control unit. In the processor 275; (2) activating the ion beam generating unit 21 and the neutralization plasma overflow unit 220 to generate the implanted ion beam 215 and the neutralization electron 230; (3) detected by the detector 260 The actual flow of the electron beam measured and used, and the flow of the implanted ion beam 215 detected by the detector 280, and the actual flow of the two is returned to the microprocessor 275 to obtain an actual ratio. 13 573442 (4) The microprocessor 275 is based on the built-in ratio data, and issues an instruction to the aperture control mechanism to adjust the size of the aperture 228 so that the actual flow of the outflowing neutralizing electron beam conforms to the ratio data; (5 ) The actual flow of the electron beam to be neutralized remains stable After that (that is, after the aperture size remains stable), the wafer 240 is moved into the work area 250 using a wheel for ion implantation. The ion implantation results performed in the above manner over time are shown in Table 3 below: Table 3 Electron beam Flow rate and ion implantation results change with time. Ii / Ie Ion implantation situation is the best in the first 0.7. 0.68 the 3rd 0.67 the 4th 0.69 the 5th ____ 0.67 ---- ^ _ From the above results, it can be known that in the conventional art, only the early-mouth flow rate lightning arrester is used, and the exit flow of the eight ion beams and the exit flow of the sub-beams are maintained at a fixed value, and 14 573442 = positive ion implantation cannot be completed. The situation, especially the phenomenon of electron loss that may occur in the process of ②. In fact, = fluctuates with time, so it is known that there are fluctuations in the present, can not be accurately controlled, and often support; the situation is also attacked ^ ^ „ Each component on the Sumiyoshi Chengri day was subjected to power breach. The present invention utilizes the Xinlai control method to establish the fluctuation of the original electron beam interstitial flow rate in a feeding house, making the early opening of the opening hole of the pulp overflow chamber. Size to compensate in this way The fluctuation of the actual flow of the electron beam makes Dianli ^ enable the actual flow of the electron beam to be maintained at two: the ion implantation status of the mother batch can be accurately grasped, thereby improving the yield of wafer ion implantation. As a result, the present invention, regardless of its purpose, means, and effect, is different from the conventional technology in its characteristics. It is a major breakthrough in the "control method of plasma overflow chamber hole 1", which is expected to grant a quasi-patent at an early date. What is left to think is that many of the above-mentioned embodiments are merely for the sake of convenience. The scope of the rights claimed in the present invention is self-explanatory. The scope of the patent claims shall prevail, and not only the above-mentioned embodiments. # V. Brief Description of Drawings Figure 1 is an ion implanter used in the conventional art. Fig. 2 is an ion implanter used in the present invention. VI. Explanation of drawing number 110 Ion beam generator 120 Plasma overflow chamber 115 Implanted ion beam 125 Plasma exit 15 573442 130 Plasma (electron beam) 150 Working area 140 Wafer 210 Ion beam generation unit 215 Implanted ion Ion beam 220 plasma overflow chamber 2 2 2 coil 224 gas inlet 226 electron beam guide tube 228 plasma outlet 230 electron beam (emission current) 240 wafer 250 working area 260 electron beam flow detector 270 feedback line 275 microprocessor 280 implanted ion flow detector 16