JP2008023926A - Pressure-sensitive adhesive film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a gas barrier pressure-sensitive adhesive film of which the gas barrier properties are kept without being lowered even if the pressure-sensitive adhesive film receives physical load such as stretching, folding, wrinkling, etc. caused by the repeated opening and re-closing of the takeout port of a container. <P>SOLUTION: The pressure-sensitive adhesive film for repeatedly opening and re-closing the opening part of the container is composed of a pressure-sensitive adhesive film base material and the pressure-sensitive adhesive layer provided thereon. The pressure-sensitive adhesive film base material is composed of a base material film comprising a plastic film and the inorganic oxide vapor deposition film formed at least on one side thereof and reduced in the lowering of gas barrier properties even if repeated opening and re-closing are performed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention is a pressure-sensitive adhesive film having gas barrier properties for repeated opening and resealing of an opening of a container, the pressure-sensitive adhesive film comprising a pressure-sensitive adhesive film substrate and a pressure-sensitive adhesive layer provided thereon, and repeatedly The present invention relates to a gas barrier pressure-sensitive adhesive film characterized in that a decrease in gas barrier property due to opening and resealing of the opening is small.

As the base material of the transparent adhesive tape, polyamide, PET, OPP, cellophane, and the like have been selected and used according to purposes such as hand cutting, strength, and heat resistance. However, the base material of these transparent adhesive tapes has poor gas barrier properties, and when the opening of the packaging body is sealed with a transparent adhesive tape comprising these base materials, it is transparent even if the packaging body has sufficient barrier performance. There was a problem that the gas barrier performance of the package could not be utilized due to leakage from the part resealed with the adhesive tape. In particular, in the case of a packaging form in which a wet tissue take-out port is sealed with an adhesive film, as seen in packaging materials for portable wet tissues, the take-out port can be used even if a package made of an aluminum vapor deposition film having a low water vapor permeability is used. Is only covered with an adhesive tape, there is a problem that the original barrier performance of the package cannot be utilized due to the leakage of water vapor through the adhesive tape. In addition, since the container outlet is opened and resealed many times until the package contents are used up, there is a problem that the adhesive film itself cannot be stored for a long period of time without barrier properties. In order to solve these problems, adhesive tapes based on polyvinylidene chloride or aluminum foil have been put into practical use.
Also, packaging fields and electronic equipment members that require a high water vapor barrier, such as adhesive films with high gas barrier properties for packaging used in the packaging field of food / daily necessities, electronics-related parts and pharmaceuticals, etc. As a pressure-sensitive adhesive film having a high gas barrier property used in the above field, a pressure-sensitive adhesive film having a high gas barrier property provided with a laminate in which vapor-deposited thin film layers and intermediate coating layers are alternately laminated on one side of a substrate made of a plastic material Is known (see Patent Document 1).
JP 2004-276294 A

However, in the case of a pressure-sensitive adhesive film based on polyvinylidene chloride, the barrier property may be insufficient, and there is a problem in that a chlorine compound gas is generated at the time of waste combustion. Moreover, the adhesive film which uses aluminum foil as a base material is opaque, and there is a problem that the content cannot be seen through the adhesive film, especially when the container body is opaque.
In addition, when the adhesive film described in Patent Document 1 is repeatedly opened and resealed at the container outlet, the deposited thin film layer and the intermediate coating layer constituting the laminate are opened and reopened at the outlet. There has been a problem that a physical load such as pulling and ironing is applied every time the sealing is performed, whereby the original barrier property is lowered.
The problem to be solved by the present invention is that the deterioration of gas barrier properties is small even when subjected to physical loads such as pulling, folding, and stagnation that occur every time the container outlet is opened and resealed, and the gas barrier properties are maintained. It is to provide an adhesive film having gas barrier properties.

  The invention according to claim 1 solves the above-mentioned problem, and is an adhesive film having gas barrier properties for repeatedly sealing and opening an opening of a container, wherein the adhesive film is an adhesive film substrate. And the pressure-sensitive adhesive layer provided thereon, the pressure-sensitive adhesive film base material is composed of a base film made of a plastic film and an inorganic oxide vapor deposition film formed on at least one surface thereof, and is repeatedly opened and resealed. However, the gist of the present invention is a pressure-sensitive adhesive film having a gas barrier property, which is characterized by a small decrease in the barrier property.

  In the present invention, as the inorganic oxide vapor deposition film, a film formed by a chemical vapor deposition method, a physical vapor deposition method or the like can be used, but a film formed by a plasma CVD method is particularly desirable.

  In that case, a carbon-containing silicon oxide vapor deposition film is particularly preferable as the inorganic oxide vapor deposition film formed by the plasma CVD method. A silicon oxide vapor deposition film can also be preferably formed. Moreover, you may provide the surface protective layer which consists of a plastic film further on an inorganic oxide vapor deposition film.

  The pressure-sensitive adhesive film of the present invention is a pressure-sensitive adhesive film having gas barrier properties for repeatedly sealing and opening the opening of a container, and the pressure-sensitive adhesive film comprises a pressure-sensitive adhesive film substrate and a pressure-sensitive adhesive layer provided thereon. The adhesive film base material is composed of a base film made of a plastic film and an inorganic oxide vapor deposition film formed on at least one surface thereof, so that even if repeated opening and re-sealing is performed, the barrier property deterioration due thereto is small. Have advantages. The pressure-sensitive adhesive film of the present invention can be effectively used for sealing a take-out port of a wet tissue packaging container, for example.

  FIG. 1 is a sectional view showing a first embodiment of the pressure-sensitive adhesive film of the present invention.

  The pressure-sensitive adhesive film body of the present invention shown in FIG. 1 comprises a pressure-sensitive adhesive film substrate 1 and a pressure-sensitive adhesive layer 2 formed on the pressure-sensitive adhesive film substrate 1, and the pressure-sensitive adhesive film substrate 1 is a base film made of a plastic film. 3 and an inorganic oxide vapor deposition film 4 formed on one surface thereof.

  As the base film 3, a polyester film such as polyethylene terephthalate or polyethylene naphthalate, biaxially stretched polyethylene, biaxially stretched polypropylene, polyamide film, polycarbonate film, polyacrylonitrile film, polyimide film, or the like can be used. The base film 3 may be provided with a print layer such as a decorative pattern or a trade name.

  The inorganic oxide vapor deposition film 4 can be formed by a chemical vapor deposition method, a physical vapor deposition method, or the like, and a carbon-containing silicon oxide vapor deposition film or a silicon oxide vapor deposition film formed by a plasma CVD method is particularly preferable.

  As described above, the pressure-sensitive adhesive film of the present invention comprises a pressure-sensitive adhesive film substrate 1 and a pressure-sensitive adhesive layer 2 provided thereon, and the pressure-sensitive adhesive film substrate 1 is formed on a single-sided substrate film 3 made of a plastic film. Since it consists of the formed inorganic oxide vapor deposition film 4, even if it repeats opening and resealing, it has the advantage that the fall of barrier property by it is small. The pressure-sensitive adhesive film of the present invention can be effectively used for sealing a take-out port of a wet tissue packaging container, for example.

  FIG. 2 shows a second embodiment of the pressure-sensitive adhesive film of the present invention. The pressure-sensitive adhesive film of the present invention shown in FIG. 2 is composed of a pressure-sensitive adhesive film substrate 1 and a pressure-sensitive adhesive layer 2 formed on the pressure-sensitive adhesive film substrate 1, and the pressure-sensitive adhesive film substrate 1 is a base film 3 made of a plastic film. And a surface protective layer 5 made of a plastic film such as polyethylene, polypropylene, polyethylene terephthalate, etc. in order to further protect the surface of the inorganic oxide vapor deposited film 4 on the inorganic oxide deposited film 4. It is provided.

  FIG. 3 shows a third embodiment of the adhesive film of the present invention. In this adhesive film, the inorganic oxide vapor deposition film 4 is provided on the side facing the adhesive layer 2 of the base film 3.

  FIG. 4 shows a fourth embodiment of the adhesive film of the present invention. In this adhesive film, the inorganic oxide vapor deposition film 4 is provided on both surfaces of the base film 3, the adhesive layer 2 is provided on the surface of one inorganic oxide adhesive layer 4, and the other inorganic oxide vapor deposition is provided. A surface protective layer 5 is provided on the surface of the film 4.

  Next, a chemical vapor deposition method, a physical vapor deposition method, and the like for forming the inorganic oxide vapor deposition film 4 will be sequentially described.

In the present invention, the inorganic oxide vapor-deposited film by the chemical vapor deposition method will be further described. As the inorganic oxide vapor-deposited film by the chemical vapor deposition method, for example, a plasma enhanced deposition process (PECVD method) is used. ), A chemical vapor deposition method (chemical vapor deposition method, CVD method) such as a thermal chemical vapor deposition method or a photochemical vapor deposition method can be used to form an inorganic oxide vapor deposition film.
In the present invention, specifically, an evaporation gas such as an organosilicon compound is used as a raw material on one surface of the base film 3 and an inert gas such as argon gas or helium gas is used as a carrier gas. Further, an inorganic oxide vapor deposition film 4 such as silicon oxide can be formed by using a low temperature plasma chemical vapor deposition method using an oxygen gas or the like as an oxygen supply gas and using a low temperature plasma generator or the like. it can.

  In the above, as the low-temperature plasma generator, for example, a generator such as high-frequency plasma, pulse wave plasma, or microwave plasma can be used. Thus, in the present invention, highly active and stable plasma is obtained. For this purpose, it is desirable to use a high-frequency plasma generator.

Specifically, an example of the formation method of the inorganic oxide vapor deposition film by the low temperature plasma CVD method will be described. FIG. 5 shows the formation method of the inorganic oxide vapor deposition film 4 by the plasma CVD method. It is a schematic block diagram of the low-temperature plasma CVD apparatus which shows an outline.
As shown in FIG. 5, the base film 3 is fed out from the unwinding roll 23 disposed in the vacuum chamber 22 of the plasma CVD apparatus 21, and the base film 3 is further moved to the auxiliary roll 24. Then, it is conveyed on the circumferential surface of the cooling / electrode drum 25 at a predetermined speed.
Then, an oxygen gas, an inert gas, a monomer gas for vapor deposition such as an organosilicon compound, and the like are supplied from the gas supply devices 26 and 27, the raw material volatilization supply device 28, and the like, and a vapor mixture gas composition comprising them. Since the mixed gas composition for vapor deposition is introduced into the vacuum chamber 22 through the raw material supply nozzle 29 without adjusting the above, and on the substrate film 3 conveyed on the circumferential surface of the cooling / electrode drum 25 described above. The plasma is generated by the glow discharge plasma 30 and irradiated to form an inorganic oxide vapor deposition film 4 such as silicon oxide or carbon-containing silicon oxide.
At that time, a predetermined power is applied to the cooling / electrode drum 25 from a power source 31 disposed outside the vacuum chamber 22, and a magnet 32 is disposed in the vicinity of the cooling / electrode drum 25. Thus, the generation of plasma is promoted.

Next, the base film 3 on which the inorganic oxide vapor deposition film such as silicon oxide is formed is wound on the winding roll 34 via the auxiliary roll 33. The base film 3 having the wound inorganic oxide vapor-deposited film 4 is provided with an adhesive layer 2 to form an adhesive film.
In the figure, 35 represents a vacuum pump.
Further, the above plasma CVD apparatus exemplifies one example, and it goes without saying that the present invention is not limited thereto.
Although not shown, in the present invention, the inorganic oxide deposited film may be not only one layer of the inorganic oxide deposited film but also a multilayer film in which two or more layers are laminated and used. The materials may be used as a single kind or a mixture of two or more kinds, and an inorganic oxide vapor deposition film in which different kinds of materials are mixed can also be constituted.

In the above, the inside of the vacuum chamber 22 is depressurized by the vacuum pump 35, and the degree of vacuum is about 1 × 10 ⁻¹ to 1 × 10 ⁻⁸ Torr, preferably the degree of vacuum is 1 × 10 ⁻³ to 1 × 10 ⁻⁷ Torr. It is desirable to adjust to.
In the raw material volatilization supply device 28, the organic silicon compound as the raw material is volatilized and mixed with oxygen gas, inert gas or the like supplied from the gas supply devices 26, 27, and this mixed gas is supplied to the raw material supply nozzle 29. Is introduced into the vacuum chamber-22.
In this case, the content of the organosilicon compound in the mixed gas is about 1 to 40%, the content of oxygen gas is about 10 to 70%, and the content of inert gas is about 10 to 60%. For example, the mixing ratio of the organosilicon compound, oxygen gas, and inert gas can be about 1: 6: 5 to 1:17:14.

On the other hand, since a predetermined voltage is applied to the cooling / electrode drum 25 from the power supply 31, the glow discharge plasma is generated in the vicinity of the opening of the raw material supply nozzle 29 in the vacuum chamber 22 and the cooling / electrode drum 25. 30 is generated, and the glow discharge plasma 30 is derived from one or more gas components in the mixed gas. In this state, the base film 3 is conveyed at a constant speed, and the glow discharge plasma is supplied. 30, an inorganic oxide vapor deposition film such as silicon oxide can be formed on the base film 3 on the circumferential surface of the cooling / electrode drum 25. At this time, the degree of vacuum in the vacuum chamber should be adjusted to 1 × 10 ⁻¹ to 1 × 10 ⁻⁴ Torr, preferably to 1 × 10 ⁻¹ to 1 × 10 ⁻² Torr. In addition, it is desirable that the conveyance speed of the base film 3 is adjusted to about 10 to 300 m / min, preferably about 50 to 150 m / min.

In addition, in the plasma CVD apparatus 21 described above, the inorganic oxide vapor deposition film 4 such as silicon oxide is formed on the base film 3 as a thin film in the form of SiO _x while oxidizing the plasma source gas with oxygen gas. Therefore, the formed inorganic oxide vapor deposition film 4 such as silicon oxide is a dense continuous layer having a small gap and rich in flexibility. Therefore, an inorganic oxide such as silicon oxide is formed. The barrier property of the oxide vapor deposition film 4 is much higher than that of the inorganic oxide vapor deposition film 4 such as silicon oxide formed by the conventional vacuum vapor deposition method or the like. It can be obtained.
In the present invention, the surface of the base film 3 is cleaned by SiO _x plasma, and polar groups, free radicals, and the like are generated on the surface of the base film 3. This has the advantage that the tight adhesion between the inorganic oxide vapor-deposited film 4 and the base film 3 is high.
Furthermore, as described above, the degree of vacuum when forming a continuous film of an inorganic oxide such as silicon oxide is about 1 × 10 ⁻¹ to 1 × 10 ⁻⁴ Torr, preferably 1 × 10 ⁻¹ to 1 × 10. ^Since it is adjusted to ^-2 Torr position, the degree of vacuum when forming an inorganic oxide vapor deposition film such as silicon oxide by the conventional vacuum evaporation method is compared with 1 × 10 ⁻⁴ to 1 × 10 ⁻⁵ Torr position. Since the degree of vacuum is low, the vacuum state setting time when the base film 3 is exchanged can be shortened, the degree of vacuum is easily stabilized, and the film forming process is stabilized.

In the present invention, a vapor deposition film of silicon oxide formed using a vapor deposition monomer gas such as an organosilicon compound chemically reacts with a vapor deposition monomer gas such as an organic silicon compound and oxygen gas, and the reaction product. Is closely adhered to one surface of the base film 3 to form a dense thin film having high flexibility, etc., and is generally represented by the general formula SiO _x (where X represents a number from 0 to 2). It is a continuous thin film mainly composed of silicon oxide.
Thus, the silicon oxide vapor-deposited film is represented by the general formula SiO _x (where X represents a number from 1.3 to 1.9) from the viewpoint of transparency and barrier properties. A thin film mainly composed of a deposited silicon oxide film is preferable.
In the above, the value of X varies depending on the molar ratio of vapor deposition monomer gas and oxygen gas, plasma energy, etc. Generally, the gas permeability decreases as the value of X decreases, but the film itself Yellowish and less transparent.

In addition, the silicon oxide vapor-deposited film is mainly composed of silicon oxide, and further, at least one kind of compound composed of one kind of carbon, hydrogen, silicon, or oxygen, or two or more kinds thereof is chemically used. It consists of a vapor deposition film contained by bonding or the like.
For example, when a compound having a C—H bond, a compound having a Si—H bond, or a carbon unit is in the form of graphite, diamond, fullerene, etc. A derivative may be contained by a chemical bond or the like.
Specific examples include hydrocarbons having a CH ₃ site, hydrosilica such as SiH ₃ silyl, SiH ₂ silylene, and hydroxyl derivatives such as SiH ₂ OH silanol.
In addition to the above, the type, amount, etc. of the compound contained in the silicon oxide vapor deposition film can be changed by changing the conditions of the vapor deposition process.
Thus, the content of the above compound in the deposited film of silicon oxide is about 0.1 to 50%, preferably about 5 to 20%.
In the above, if the content is less than 0.1%, the impact resistance, spreadability, flexibility, etc. of the deposited silicon oxide film become insufficient, and scratches, cracks, etc. easily occur due to bending, It becomes difficult to stably maintain a high barrier property, and if it exceeds 50%, the barrier property is lowered, which is not preferable.
Furthermore, in the present invention, in the silicon oxide vapor deposition film, the content of the above compound is preferably decreased from the surface of the silicon oxide vapor deposition film in the depth direction. Is improved in impact resistance and the like by the above compound and the like. On the other hand, at the interface with the base film 3, the content of the above compound is small. This has the advantage that the tight adhesion becomes strong.

Next, in the above, as a monomer gas for vapor deposition of an organic silicon compound or the like that forms the inorganic oxide vapor deposition film 4 such as silicon oxide, for example, 1.1.3.3-tetramethyldisiloxane, hexamethyldisiloxane Siloxane, vinyltrimethylsilane, methyltrimethylsilane, hexamethyldisilane, methylsilane, dimethylsilane, trimethylsilane, diethylsilane, propylsilane, phenylsilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, tetraethoxysilane, phenyl Trimethoxysilane, methyltriethoxysilane, octamethylcyclotetrasiloxane, etc. can be used.
In the present invention, among the organic silicon compounds as described above, use of 1.1.3.3-tetramethyldisiloxane or hexamethyldisiloxane as a raw material is easy to handle and formed continuous film. In view of the above characteristics and the like, it is a particularly preferable raw material.
Moreover, in the above, as an inert gas, argon gas, helium gas, etc. can be used, for example.

Next, in the present invention, the inorganic oxide vapor deposition film 4 by the physical vapor deposition method will be described in more detail. Examples of the inorganic oxide vapor deposition film by the physical vapor deposition method include, for example, a vacuum vapor deposition method and a sputtering method. Inorganic oxide vapor deposition film 4 can be formed using physical vapor deposition methods (Physical Vapor Deposition method, PVD method) such as ion plating method and ion cluster beam method.
In the present invention, specifically, a metal oxide is used as a raw material, this is heated and vaporized, and this is vapor-deposited on one of the substrate films 3, or a metal or metal as a raw material. Using an oxidation reaction deposition method that uses an oxide, oxidizes by introducing oxygen and deposits on one side of the substrate film 3, and further uses a plasma-assisted oxidation reaction deposition method that assists the oxidation reaction with plasma. A vapor deposition film can be formed.
In the above, as a heating method of the vapor deposition material, for example, a resistance heating method, a high frequency induction heating method, an electron beam heating method (EB), or the like can be used.

In the present invention, specific examples of the method for forming an inorganic oxide thin film by physical vapor deposition are given. FIG. 6 is a schematic configuration diagram showing an example of a take-up vacuum deposition apparatus.
As shown in FIG. 6, the base film 3 fed out from the unwinding roll 43 in the vacuum chamber 42 of the take-up vacuum deposition apparatus 41 is cooled through the guide rolls 44 and 45. -Guided to the dating drum 46;
Thus, the evaporation source 48 heated by the crucible 47, for example, metal aluminum or aluminum oxide is evaporated on the base film 3 guided on the cooled coating drum 46, Further, if necessary, an inorganic oxide vapor deposition film such as aluminum oxide is formed through the masks 50 and 50 while jetting oxygen gas or the like from the oxygen gas outlet 49 and supplying the oxygen gas. In the above, for example, the base film 3 on which an inorganic oxide vapor deposition film such as aluminum oxide is formed is sent out through the guide rolls 45 ′ and 44 ′ and taken up on the take-up roll 51. An inorganic oxide vapor deposition film can be formed by the physical vapor deposition method according to the invention.
In the present invention, the first-layer inorganic oxide vapor-deposited film is first formed by using the winding type vacuum vapor deposition apparatus as described above, and then the inorganic oxide vapor-deposited film is formed in the same manner. In addition, an inorganic oxide vapor deposition film is formed, or the above-described winding type vacuum vapor deposition apparatus is used to connect the two in series and continuously form an inorganic oxide vapor deposition film. Thereby, the inorganic oxide vapor deposition film which consists of a multilayer film of two or more layers can be formed.

In the above, as the inorganic oxide vapor deposition film, any thin film in which a metal oxide is vapor deposited can be used. For example, silicon (Si), aluminum (Al), magnesium (Mg), calcium (Ca ), Potassium (K), tin (Sn), sodium (Na), boron (B), titanium (Ti), lead (Pb), zirconium (Zr), yttrium (Y), etc. Can be used.
Thus, preferable examples include vapor-deposited films of metal oxides such as silicon (Si) and aluminum (Al).
Thus, the metal oxide vapor deposition film 4 can be referred to as a metal oxide such as silicon oxide, aluminum oxide, magnesium oxide, etc., and its notation is, for example, SiO x, AlO _x , MO _X (in the formula, M represents a metal element, the value of X is in the range respectively of a metal element different.) as MgO _X such as represented by.
Moreover, as a range of said X value, silicon (Si) is 0-2, aluminum (Al) is 0-1.5, magnesium (Mg) is 0-1, calcium (Ca) is 0 to 1, potassium (K) is 0 to 0.5, tin (Sn) is 0 to 2, sodium (Na) is 0 to 0.5, boron (B) is 0 to 1, 5, Titanium (Ti) can take values in the range of 0 to 2, lead (Pb) in the range of 0 to 1, zirconium (Zr) in the range of 0 to 2, and yttrium (Y) in the range of 0 to 1.5.
In the above, when X = 0, it is a complete metal and is not transparent and cannot be used at all. The upper limit of the range of X is a completely oxidized value.
In the present invention, generally, examples other than silicon (Si) and aluminum (Al) are scarce, silicon (Si) is 1.0 to 2.0, and aluminum (Al) is 0.5. Those with values in the range of -1.5 can be used.
In the present invention, the film thickness of the inorganic oxide vapor-deposited film 4 as described above varies depending on the type of metal or metal oxide used, but is, for example, about 50 to 2000 mm, preferably about 100 to 1000 mm. It is desirable to select and form arbitrarily within the range.
In the present invention, the inorganic oxide vapor deposition film 4 is a metal to be used, or the metal oxide is one or a mixture of two or more, and an inorganic oxide vapor deposition mixed with different materials. A membrane can also be constructed.

  The pressure-sensitive adhesive layer 2 is preferably an acrylic pressure-sensitive adhesive used as a re-peelable pressure-sensitive adhesive. Acrylic pressure-sensitive adhesive is a pressure-sensitive adhesive mainly composed of a copolymer of alkyl acrylate and acrylic acid, and a cross-linking agent, tackifier, plasticizer, filler, heat stabilizer, UV absorber, etc. as auxiliary components. Agents can be used.

  The surface of the pressure-sensitive adhesive layer 2 may be laminated with release paper as necessary. Moreover, you may provide a peeling layer as needed in the side which does not provide the inorganic oxide layer 4 of the winding-shaped base film 3. FIG.

A roll-up plasma CVD apparatus was used. Moreover, polyester (PET) (Toray Industries, Inc., P60, 12μ) was used as a base material. A carbon-containing silicon oxide vapor deposition film was formed on one side of the substrate under the following vapor deposition conditions.
[Vapor deposition conditions]
Output: 10kW
Degree of vacuum: 60 mTorr
Line speed: 50m / min
Gas: Hexamethyldisiloxane: Oxygen gas: He: Ar = 1.0: 5.0: 1.0: 0.5 (unit: slm)

  An acrylic emulsion (HVC-3006 manufactured by Toa Gosei Co., Ltd.) was coated on the obtained carbon-containing silicon oxide vapor-deposited film to form an adhesive layer to obtain an adhesive film.

A roll-up PECVD apparatus was used. In addition, biaxially stretched polypropylene (OPP) (manufactured by Tosero Co., Ltd., OPU-1, 20 μ) was used as the substrate. A carbon-containing silicon oxide vapor deposition film was formed on one side of the substrate under the following vapor deposition conditions.
[Vapor deposition conditions]
Output: 10kW
Degree of vacuum: 60 mTorr
Line speed: 20m / min
Gas: Hexamethyldisiloxane: Oxygen gas: He: Ar = 1.0: 5.0: 1.0: 0.5 (unit: slm)

  An acrylic emulsion (HVC-3006 manufactured by Toa Gosei Co., Ltd.) was coated on the obtained carbon-containing silicon oxide vapor-deposited film to form an adhesive layer to obtain an adhesive film.

  Silica-deposited PET (manufactured by Mitsubishi Plastics Co., Ltd., TECH-H, # 12) is coated with acrylic emulsion (HVC-3006 manufactured by Toa Gosei Co., Ltd.) on one side to form an adhesive layer to obtain an adhesive film It was.

  One side of alumina-deposited PET (Toray processed film, 1011 HGC # 12) was coated with an acrylic emulsion (HVC-3006 manufactured by Toa Gosei Co., Ltd.) to form an adhesive layer to obtain an adhesive film.

[Comparative Example 1]
An acrylic emulsion (HVC-3006 manufactured by Toa Gosei Co., Ltd.) was coated on one side of polyvinylidene OPP (Tosero, OLD # 12) to form an adhesive layer to obtain an adhesive film.

  For Examples 1, 2, 3, 4 and Comparative Example 1, the barrier properties at the initial stage, the barrier properties after 2% pulling, and the barrier properties after the 50-time bending test were examined. The measurement results are shown in Table 1. In addition, the measurement of barrier property was measured using OX-TRAN2 / 20 (oxygen permeability) and PERMATRAN-W3 / 31 (water vapor permeability) manufactured by MOCON.

  As shown in Table 1, in Comparative Example 1, the barrier property after 2% pulling and the barrier property after 50 times bending test were greatly deteriorated compared to the initial barrier property. In Examples 1 and 2, the decrease in barrier properties was small. Further, it was found that the barrier performance was not lowered in Examples 3 and 4 as compared with Comparative Example 1.

  The pressure-sensitive adhesive film of the present invention can be used as a sealing piece that repeatedly opens and reseals the mouth of a container, such as a wet tissue packaging container.

It is sectional drawing of 1st embodiment of the adhesive film of this invention. It is sectional drawing of 2nd embodiment of the adhesive film of this invention. It is sectional drawing of 3rd embodiment of the adhesive film of this invention. It is sectional drawing of 4th embodiment of the adhesive film of this invention. 1 is a schematic view of a plasma CVD apparatus. 1 is a schematic view of a take-up vacuum deposition apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Adhesive film base material 2 Adhesive layer 3 Base film 4 Inorganic oxide vapor deposition film

Claims (5)

  An adhesive film for repeatedly opening and resealing an opening of a container, the adhesive film comprising an adhesive film substrate and an adhesive layer provided thereon, the adhesive film substrate being a plastic film A pressure-sensitive adhesive film comprising a base film made of the above and an inorganic oxide vapor deposition film formed on at least one surface thereof, and a reduction in gas barrier properties due to repeated opening and resealing is small.   The pressure-sensitive adhesive film according to claim 1, wherein the inorganic oxide layer is formed by a chemical vapor deposition method.   The pressure-sensitive adhesive film according to claim 2, wherein the inorganic oxide layer is formed by a plasma CVD method.   The pressure-sensitive adhesive film according to claim 3, wherein the inorganic oxide layer is a carbon-containing silicon oxide layer. The pressure-sensitive adhesive film according to claim 1, wherein the inorganic oxide layer is formed by physical vapor deposition.

Images