JP2008019497A - Film-forming apparatus, liquid crystal device and projector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming apparatus which prevents the quality of a film from degrading due to the deposition of a film-forming material onto a member arranged between a target and a substrate, and also improves an operating efficiency of the apparatus. <P>SOLUTION: The film-forming apparatus comprises: a substrate transfer system 50 which relatively moves a substrate 15 against a target 11 so that the substrate 15 crosses a flying region of particles emitted from the target 11; a straightening holder 100 which is arranged in the flying region of the particles and regulates an incident direction and/or an incident region of the particles with respect to the substrate 15; and a holder-carrying system 60 which carries the straightening holder 100 into or out from the flying region of the particles. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a film forming apparatus, a liquid crystal device, and a projector.

  Conventionally, a film forming apparatus that adheres and deposits particles released from a target material on a substrate has been widely used. For example, a film forming material is released in a state where the substrate is placed in a vacuum chamber, and the emitted particles are discharged. When reaching the film formation surface of the substrate, a film of the material grows on the film formation surface. As such a film formation technique, for example, a vapor deposition method, a sputtering method, and the like are known.

In a film forming apparatus, there is a technique of moving a substrate relative to a target material and arranging a member having a specific function between the target material and the substrate (for example, see Patent Document 1).
Japanese Patent Laid-Open No. 2002-365639

  Since a film forming material adheres to the member disposed between the target material and the substrate, when the film forming material is deposited, the function of the member is deteriorated or the deposit is peeled off from the member to form a film. There is a risk of film quality deterioration due to adhesion to the substrate.

  In the film forming apparatus, since the target material and the substrate are generally arranged in a vacuum atmosphere, the vacuum atmosphere is easily destroyed when a member arranged between the target material and the substrate is replaced or cleaned. . Resetting the vacuum atmosphere takes a relatively long time, leading to a reduction in the operating rate of the equipment.

  The present invention provides a film forming apparatus capable of preventing deterioration in film quality caused by deposition of a film forming material on a member disposed between a target and a substrate and improving the apparatus operating rate. The purpose is to provide.

  The film forming apparatus of the present invention is a film forming apparatus for adhering particles emitted from a target to a substrate, and is relatively relative to the target so as to cross a flight region of particles emitted from the target. A substrate transport system for moving a substrate; a rectifying jig that is disposed in a flying region of the particles and restricts the incident direction and / or the incident region of the particles with respect to the substrate; and the rectifying treatment for the flying region of the particles. And a jig conveyance system for carrying in and out the tool.

  According to the film forming apparatus of the present invention, since the jig transport system is provided, the rectifying jig can be carried in and out independently at any timing separately from the carrying in and out of the substrate. Therefore, it is relatively easy to replace or clean the rectifying jig, and the apparatus operating rate can be improved. Furthermore, it is possible to suppress deposition of film forming material on the rectifying jig by replacing or cleaning the rectifying jig at an appropriate timing, resulting in deposition of film forming material on the rectifying jig. It is possible to prevent deterioration of the film quality.

In the film forming apparatus of the present invention, the rectifying jig includes a collimator that regulates an incident direction of the particles with respect to the substrate, and a shielding plate that regulates an incident area of the particles with respect to the substrate, and the collimator; The shielding plate can be integrated.
According to this configuration, since the collimator and the shielding plate in the rectifying jig are integrated, the configuration of the jig transport system can be simplified.

  Moreover, the film-forming apparatus of this invention can be set as the structure further equipped with the control apparatus which controls the timing of carrying in / out of the said rectifying jig.

In this case, the control device may be configured to determine the carry-in / out timing of the rectifying jig based on the number of processed substrates and / or the accumulated processing time.
Or the said control apparatus can be set as the structure which determines the timing of carrying in / out of the said rectifying jig based on the result of having detected the quantity of the deposit in the said rectifying jig.
As a result, the rectifying jig can be replaced and cleaned at an appropriate timing.

Further, in the film forming apparatus of the present invention, the film forming chamber set to a vacuum pressure, and provided between the film forming chamber and the external space, temporarily stores the substrate and / or the rectifying jig. It can be set as the structure further provided with a preliminary | backup chamber.
According to this configuration, since a preliminary chamber is provided between the film forming chamber and the external space, the substrate and / or the rectifying jig can be taken in and out of the film forming chamber without destroying the vacuum atmosphere of the film forming chamber. Is possible.

In this case, the preliminary chamber for the substrate and the preliminary chamber for the rectifying jig may be provided separately.
According to this configuration, since the carry-in / out path of the rectification jig is provided separately from the substrate, there are relatively few restrictions on the carry-in / out of the rectification jig, and the apparatus operating rate can be improved.

In addition, the preliminary chamber of the rectifying jig may include a storage mechanism that stores a plurality of the rectifying jigs and / or a cleaning mechanism that cleans the rectifying jigs.
According to this configuration, it is possible to replace or clean the rectifying jig without taking the rectifying jig into the external space.

In the film forming apparatus of the present invention, the incident angle when the particles are incident on one surface of the substrate may be 15 ° or less.
According to this configuration, a film suitable for horizontal alignment type liquid crystal alignment can be formed.

Further, in the film forming apparatus of the present invention, the target can be configured to mainly contain an inorganic material.
According to this configuration, a film containing an inorganic material as a main material can be formed.

The liquid crystal device of the present invention includes an alignment film formed by the film forming apparatus of the present invention.
According to the liquid crystal device of the present invention, since the alignment film is formed using a film forming apparatus having a high operation rate, the cost can be reduced.

In the liquid crystal device of the present invention, the alignment film may be an inorganic alignment film containing an inorganic material as a main component.
In general, inorganic materials are more excellent in chemical stability and light resistance than organic materials. An inorganic alignment film containing an inorganic material as a main component has little photodegradation and stable alignment characteristics over a long period of time.

The projector according to the present invention includes the liquid crystal device according to the present invention.
According to the projector of the present invention, since the liquid crystal device of the present invention is provided, the cost can be reduced.

  FIG. 1 is a diagram for explaining the basic configuration of the film forming apparatus of the present invention, and FIG. 2 is a perspective view showing the main configuration of the film forming apparatus of FIG.

  As shown in FIG. 1, the film forming apparatus IBS1 irradiates a target 11 arranged in a vacuum atmosphere with an ion beam 12 accelerated to high energy, and emits target atoms by collision of the beam 12. This is an ion beam sputtering apparatus for depositing and depositing emitted particles on the substrate 15, and is mainly composed of a vacuum chamber 20, an ion gun 30, a transport system 40, and the like as a film forming chamber. Film formation using the ion beam sputtering method has advantages such that sputtering in a high vacuum is possible, film damage due to ions and electrons is small, and a high melting point material can be made thin.

A vacuum exhaust system 21 is connected to the vacuum chamber 20. When the evacuation system 21 is operated, the inside of the vacuum chamber 20 is evacuated and a vacuum atmosphere is formed inside the vacuum chamber 20. A target 11 as a discharge source is disposed in the vacuum chamber 20. When the inside of the vacuum chamber 20 is evacuated by the evacuation system 21, the target 11 is placed in a vacuum atmosphere. When the film forming pressure is a high vacuum pressure (for example, 5 × 10 ⁻¹ Pa or less, more preferably 5 × 10 ⁻² or less), the straightness of the ion beam 12 is improved and the sputtered particles in the vacuum chamber 20 are improved. Scattering (flight direction disorder) is suppressed.

As the material for forming the inorganic alignment film, the target 11 is made of SiO ₂ , SiO, Al ₂ O ₃ , ZnO ₂ , Ta ₂ O ₃ , TiO ₂ , Si ₃ N ₄ , ITO (indium tin oxide), etc. Various inorganic materials (inorganic oxides, inorganic nitrides, metal oxides, metal nitrides) are preferably applied. One or a combination of two or more materials can be used for the target. SiO ₂ has a particularly low dielectric constant and high light stability. A material other than the above may be used for the target 11 for forming an upper layer film or a lower layer film of the inorganic alignment film or a film other than the inorganic alignment film.

  The ion gun 30 introduces sputtering gas into an independent ion source, ionizes and accelerates the gas, and draws it out from the emission port 31 in a beam shape. Is disposed on the opposite side of the substrate 15. The discharge port 31 of the ion gun 30 is directed to the sputter surface 11 a that is the surface of the target 11 inside the vacuum chamber 20, and the ion beam 12 from the ion gun 30 is incident obliquely on the sputter surface 11 a of the target 11. In addition to the ion gun 30, assist means for performing assist ion irradiation or assist laser irradiation on the substrate 15 before or during film formation may be provided.

  Here, an intersection (irradiation point) between the sputter surface 11a and the beam axis 32 of the ion beam 12 is Pt, and an angle formed by the normal 16 of the sputter surface 11a passing through the irradiation point Pt and the beam axis 32 (hereinafter referred to as a beam angle). (Referred to as “beam angle”), θ1 <90 °, preferably 45 ° ≦ θ1 ≦ 70 °, for example, θ1 = 45 °.

  As the sputtering gas, various inert gases inert to the target 11 can be used in addition to Ar, He, Ne, Kr, and Xe. For example, molecular ions such as nitrogen, neutral particles, cluster ions, and the like may be used. The ion beam 12 has a predetermined beam width. When the ion beam 12 is incident on the sputter surface 11 a, a region having a width corresponding to the beam width is sputtered and sputtered particles are emitted into the vacuum chamber 20. .

  The transport system 40 includes a substrate transport system 50 that moves the substrate 15 relative to the target 11. At the time of film formation, the substrate 15 is disposed at a position away from the target 11 and obliquely to the side of the target 11 and within the range of the sputtered particle emission distribution from the target 11. The substrate transport system 50 moves the substrate 15 relative to the target 11 so as to cross the flight region of particles emitted from the target 11. Thereby, sputtered particles are emitted from the target 11 so as to cross the movement axis of the substrate 15, and deposit on the film formation surface 15 a by colliding with the film formation surface 15 a of the substrate 15.

  Here, although it is difficult to accurately predict the energy distribution / angle distribution of sputtered particles emitted from a certain point, the sputtered particles fly with at least a three-dimensional spread. It is known that the emission angle distribution of sputtered particles generally follows the law of cosines. The emission distribution is said to have an axially symmetric two-dimensional cross section that is fan-shaped or heart-shaped (butterfly-shaped), and may change depending on sputtering conditions such as the power of the ion beam. When the sputtering beam is incident on the target surface obliquely, the distribution center axis of the sputtered particles is also inclined obliquely with respect to the target surface.

  When a film formation point at an arbitrary position on the film formation surface 15a of the substrate 15 (in this example, the center of the film formation surface 15a) is Ps, the expected distribution central axis of the sputtered particles is the film formation point on the substrate 15. Arranged to pass through Ps. That is, since the expected distribution central axis of the sputtered particles is inclined with respect to the sputter surface 11a which is the surface of the target 11, the substrate 15 has a beam axis 32 of the ion beam 12 with respect to the normal 16 of the sputter surface 11a. It is arranged in the position that fell in the opposite direction.

  When the angle formed by the line segment PtPs connecting the irradiation point Pt and the film formation point Ps and the normal line 16 of the sputter surface 11a (hereinafter referred to as the slant angle of the substrate 15) is θ2, θ2 <90 °, preferably 45 ° ≦ θ2 <90 °.

  As shown in FIG. 2, in the substrate transport system 50, a predetermined angle is further formed between the line segment PtPs and the film formation surface 15a of the substrate 15 along the movement center axis 51 based on the tilt angle θ2. The substrate 15 is moved while maintaining the state. That is, the movement direction of the substrate 15 during film formation is a direction that crosses a virtual plane including the beam axis 32 and the line segment PtPs, and the film formation surface 15 a of the substrate 15 is centered on the movement center axis 51. It is inclined with respect to the line segment PtPs. In this example, the movement center axis 51 and the line segment PtPs are orthogonal to each other, and the movement center axis 51 coincides with the locus of the center of the film formation surface 15 a of the substrate 15.

  Here, returning to FIG. 1, the angle formed by the line segment PtPs and the film formation surface 15 a of the substrate 15, that is, the inclination of the substrate 15 (film formation surface 15 a) with respect to the line segment PtPs around the movement center axis 51. When the tilt angle is θ3, θ3 <90 °, preferably θ3 <45 °, and more preferably θ3 ≦ 15 °.

3A and 3B are diagrams showing a configuration example of the substrate transfer system 50, where FIG. 3A is a plan view and FIG. 3B is a cross-sectional view.
As shown in FIG. 3, the substrate transport system 50 includes a tray 53 on which the substrate 15 is mounted, a transport mechanism 54 that transports the tray 53, and a height defining member 55 disposed on the tray 53. The tray 53 is provided with an opening 53 a for allowing particles from the target 11 to pass toward the film formation surface 15 a of the substrate 15. When the substrate 15 is mounted on the tray 53, the arrangement angle of the substrate 15 with respect to the tray 53 is determined.

  The transport mechanism 54 supports a first position PT1 close to the target 11 and a second position PT2 far from the target 11 in the tray 53, and crosses an axis AT passing through the first position PT1 and the second position PT2 ( The tray 53 is transported in the direction of the movement center axis 51). As the transport mechanism 54, various forms such as a linear drive mechanism, a roller conveyor, and a belt conveyor can be applied.

  The height defining member 55 defines the height of the tray 53 with respect to the transport mechanism 54, that is, the distance LT between the support surface of the transport mechanism 54 and the tray 53, and the first position PT1 and / or the second position in the tray 53. Arranged at position PT2. In this example, the height defining member 55 is made of a plate-like member, and is disposed only on the edge portion of the tray 53 far from the target 11.

FIG. 4 is a diagram schematically showing a change in the relative posture of the substrate 15 with respect to the target 11.
In the example of FIG. 4, three types of trays 53A, 53B, and 53C are shown. Height defining members 55A, 55B, and 55C are disposed at the edge portions of the trays 53A, 53B, and 53C that are far from the target 11. The height defining members 55A, 55B, and 55C have different shapes, and the support surface of the transport mechanism 54 at a position (second position PT2) far from the target 11 according to each shape of the height defining members 55A, 55B, and 55C. The trays 53A, 53B, 53C are different in height from each other. That is, when the distances of the respective trays 53A, 53B, 53C from the transport mechanism 54 at the second position PT2 are LT (A), LT (B), LT (C), LT (C) <LT (A ) <LT (B). Further, at the position close to the target 11 (first position PT1), the heights of the trays 53A, 53B, and 53C from the support surface of the transport mechanism 54 are equal.

  In this case, regarding the tilt angle θ2 of the substrate 15, tray 53B <tray 53A <tray 53C. Regarding the inclination angle θ3 of the substrate 15, tray 53B <tray 53A <tray 53C. Note that the amount of change in θ3 is smaller than that in θ2. Further, regarding the length of the line segment PtPs connecting the irradiation point Pt and the film formation point Ps, that is, the distance (TS distance) between the irradiation point Pt and the film formation point Ps, the tray 53C <tray 53A <tray 53B. is there.

  Thus, in the substrate transport system 50 of this example, the inclination (θ2, θ3) of the substrate 15 with respect to the target 11 and the target 11 are determined according to the shape of the height defining member 55 disposed on the tray 53 for the substrate 15. And the distance between the substrate 15 (TS distance) change. That is, the posture of the substrate 15 with respect to the target 11 can be adjusted by changing the height from the transport mechanism 54 by the height defining member 55 at the second position PT2 far from the target 11 in the tray 53.

  The configuration of the substrate transport system 50 relating to the posture adjustment of the substrate 15, that is, the configuration in which the height defining member 55 having an arbitrary shape is attached to the tray 53 is simple and highly flexible. Further, by changing the shape of the height defining member 55 for each tray 53, the posture of the substrate 15 with respect to the target 11 can be adjusted for each substrate 15. The film forming method for adjusting the posture with respect to the target 11 for each substrate 15 is preferably applied to multi-product production.

  In the above example, only the position of the tray 53 far from the target 11 (second position PT2) is configured to change the height from the transport mechanism 54 by the height defining member 55, but the present invention is not limited thereto. It is not limited. That is, the height from the transport mechanism 54 may be changed by the height defining member 55 even at a position (first position PT1) close to the target 11 on the tray 53. For the first position PT1 near the target 11 and / or the second position PT2 far from the target 11 in the tray 53, by changing the height from the transport mechanism 54 by the height defining member 55, the configuration is simple. The relative posture of the substrate 15 with respect to the target 11 can be adjusted.

  Moreover, the form of the height defining member 55 is not limited to the plate-like member, but may be another form. For example, the height defining member 55 may be formed integrally with the tray 53 as a part of the tray 53. Alternatively, the height defining member 55 may have a mechanism having an adjustable shape.

  Returning to FIG. 1, the sputtered particles traveling along the line segment PtPs are incident on the deposition surface 15 a of the substrate 15 obliquely based on the tilt angle θ <b> 3. Actually, since the sputtered particles travel with a three-dimensional spread, the incident direction of the sputtered particles with respect to the substrate 15 varies. Further, the closer to the target 11, the higher the particle density, and the farther away, the lower the particle density.

  In this example, the distance (TS distance) between the irradiation point Pt and the film formation point Ps is controlled for the purpose of regulating the incident direction of the sputtered particles with respect to the film formation surface 15a, and the target 11 and the substrate. 15, a collimator 110 is arranged.

  Among the sputtered particles emitted from the target 11, the relatively high energy sputtered particles traveling along the distribution center axis reach a relatively distant point. On the other hand, the relatively low energy sputtered particles traveling away from the distribution center axis do not reach the far point. Therefore, by controlling the TS distance, it is possible to regulate the incident direction of the sputtered particles with respect to the film formation surface 15a. For example, the longer the TS distance, the closer the incident direction of sputtered particles is to a direction parallel to the distribution center axis (for example, the line segment PtPs). When controlling the TS distance, the width of the ion beam 12 is also appropriately controlled.

  In this example, the tilt angle θ2 of the substrate 15 is not less than 45 ° and less than 90 °, and the tilt angle θ3 of the substrate 15 is less than 45 °, so that the deposition surface can be obtained even if the TS distance is relatively short. The incident direction of the sputtered particles is regulated with respect to a direction non-parallel to 15a, that is, a direction inclined with respect to the film formation surface 15a. However, in the direction parallel to the film formation surface 15a, that is, the twist direction in the plane parallel to the film formation surface 15a, if the TS distance is relatively short, the inclination angle θ3 of the substrate 15 is merely reduced. It is difficult to regulate the incident direction of sputtered particles. In this example, the collimator 110 regulates the incident direction with respect to the twist direction.

  As shown in FIG. 2, the collimator 110 has a plurality of regulating plates 111 that are arranged apart from each other in the moving direction of the substrate 15 (in this example, the direction parallel to the film formation surface 15a). Of the particles emitted from the target 11, the particles that have passed through the gaps between the plurality of regulating plates 111 continue to fly toward the substrate 15. On the other hand, most of the particles colliding with the restriction plate 111 are captured by the restriction plate 111 or the energy is attenuated and does not reach the substrate 15. Therefore, by disposing the collimator 110 between the target 11 and the substrate 15, the incident direction of the sputtered particles is regulated with respect to the moving direction of the substrate 15 (direction parallel to the film formation surface 15a, twist direction). be able to. Note that, as the gaps (slit widths) between the plurality of regulating plates 111 are narrower, the incident directions of the sputtered particles with respect to the film formation surface 15a are aligned.

  The beam angle θ1, the tilt angle θ2 of the substrate 15, and the tilt angle θ3 of the substrate 15 are appropriately set according to the target film formation crystal structure. In this example, by controlling θ1, θ2, and θ3, the deposition surface 15a of the substrate 15 is disposed so as to be inclined with respect to the sputtering surface 11a of the target 11 at an oblique side position of the target 11, The angle (incident angle) formed between the incident direction of the sputtered particles and the film formation surface 15a is set to be less than 90 °. As a result, the sputtered particles are incident on the film formation surface 15a obliquely, and enter the film formation surface 15a. An orthorhombic crystal of the film forming material grows.

  Further, in this example, the incident direction of the sputtered particles is regulated with respect to the inclination direction with respect to the film formation surface 15a by the control of θ2 and θ3, and the moving direction of the substrate 15 by the collimator 110 (direction parallel to the film formation surface 15a). , Twist direction), the incident direction of the sputtered particles is regulated. As a result, a film having an oblique columnar structure excellent in crystal orientation can be formed without increasing the TS distance, that is, expanding the apparatus.

  Furthermore, in this example, by using the ion beam sputtering method, as described below, a film having a dense oblique structure with a small growth azimuth angle with respect to the deposition surface 15a can be formed.

FIG. 5 shows a state in which the orthorhombic crystal grows by the particles flying on the substrate 15.
As shown in FIG. 5, in general, relatively large material particles in a cluster state fly toward the substrate in the vapor deposition method, and relatively small material particles in a molecular state fly toward the substrate in the ion beam sputtering method. Therefore, in the vapor deposition method, the crystal growth orientation tends to stand with respect to the deposition surface, that is, the angle of the growth orientation tends to be larger than the incident angle of the particles with respect to the deposition surface. In the vapor deposition method, particularly when the incident angle of the particle is reduced, crystal growth is suppressed (shadowing) in the shadowed portion of the crystal, and as a result, a porous film having a relatively large distance between crystals is formed. Tend to be.

  In contrast, in the ion beam sputtering method, the correlation between the incident angle and the crystal growth orientation is high, and the above-mentioned shadowing is unlikely to occur. Therefore, even if the incident angle is small, the growth orientation is almost the same as the incident angle. The crystal grows with a corner, and the distance between the crystals is relatively small. In other words, in the ion beam sputtering method, a crystal film having a dense oblique columnar structure with a small growth azimuth angle can be formed. Such a film is preferably applied as an alignment film of a horizontal alignment type liquid crystal. Here, the alignment film has a function of aligning the alignment direction of the liquid crystal molecules and a function of controlling the pretilt angle of the liquid crystal molecules, and the horizontal alignment type pretilt angle is, for example, 0 ° to 20 °.

  Returning to FIG. 1, when forming an alignment film of a horizontal alignment type liquid crystal using the ion beam sputtering method, the maximum incident angle (maximum incident angle θ5) of the sputtered particles incident on an arbitrary point on the film formation surface 15a. ) Is preferably limited to 15 ° or less, and the expected incidence angle Δθ, which is the difference between the maximum value and the minimum value of the incident angle, is preferably limited to 10 ° or less. For example, when the inclination angle θ3 of the substrate 15 is set to 15 ° or less, the maximum incident angle θ5 is set to 15 ° or less, and when the TS distance is increased, the expected incident angle Δθ is also reduced to 10 ° or less. Thus, a film suitable for horizontal alignment type liquid crystal alignment can be formed using ion beam sputtering.

  The tilt angle θ3 of the substrate 15 may be changed according to the crystal growth process. For example, in the case of forming an alignment film of a horizontal alignment type liquid crystal, θ3 is set to be greater than 15 ° in the initial stage of growth, and θ3 is set to 15 ° or less in the middle stage or later stage of growth. Thereby, the film growth rate (deposition rate) in the initial stage of growth can be increased, and the processing time can be shortened. In the formation of other films, the inclination angle θ3 of the substrate 15 is not limited to 15 ° or less, and the maximum incident angle θ5 is not limited to 15 ° or less. In addition to the ion beam 12, film characteristics such as crystallographic properties of the film can be controlled by performing assist ion irradiation or assist laser irradiation on the substrate 15. Is possible.

  As shown in FIG. 2, a shielding plate 120 is further disposed between the target 11 and the substrate 15 for the purpose of regulating the incident area of the sputtered particles with respect to the film formation surface 15 a of the substrate 15. The shielding plate 120 includes shielding portions 121 and 122 that block the passage of particles, and an opening portion 123 that is formed between the shielding portions 121 and 122 and allows the particles to pass therethrough. In this example, the shielding plate 120 is disposed between the collimator 110 and the substrate 15 at a position adjacent to the film-forming surface 15a of the substrate 15, and the shielding portions 121 and 122 are spaced from each other at the edge portions facing each other. A plane that is disposed in the same plane and includes the shielding portions 121 and 122 is parallel to the film formation surface 15 a of the substrate 15. The shielding plate 120 may have a form in which the shielding parts 121 and 122 are integrated, or a form in which the distance between the shielding parts 121 and 122 can be adjusted.

  FIG. 6 is a schematic plan view seen from the direction of arrow A shown in FIG. In the following description, the movement direction of the substrate 15 (scanning direction, the direction that coincides with the movement center axis 51 of the substrate 15) is defined as the Y direction.

  As shown in FIG. 6, the opening 123 of the shielding plate 120 has different widths in the movement direction (Y direction) of the substrate 15 according to the distance from the target 11. Specifically, of the opposite ends of the shielding portions 121 and 122, the edge farther from the target 11 has a curve, and the edge farther than the distance between the closer edges. Spacing between parts is widened. Accordingly, the opening 123 of the shielding plate 120 gradually increases in width while drawing a curve along the direction away from the target 11. That is, the opening 123 of the shielding plate 120 has a narrower width closer to the target 11 (narrower portion 123a) and a wider distant portion (wider portion 123b).

  The form of the shielding plate 120 is not limited to the above example. For example, the shielding plate 120 may have a shape having an opening that gradually increases along the direction away from the target 11. Alternatively, the shielding plate 120 may have a plurality of openings.

  At the time of film formation, the shielding plate 120 (shielding portions 121 and 122) and the film formation surface 15a of the substrate 15 are parallel to each other, and the substrate 15 is fixed to the shielding plate 120 at a constant speed while maintaining the parallel state. To move in the Y direction (scanning movement). Simultaneously with the movement of the substrate 15, the sputtered particles that have passed through the opening 123 of the shielding plate 120 enter the deposition surface 15 a of the substrate 15. Then, when the entire region of the film formation surface 15a of the substrate 15 crosses the opening 123 of the shielding plate 120, the sputtered particles adhere to the entire region of the film formation surface 15a.

  When the sputtered particles are incident on the deposition surface 15a at an incident angle of less than 90 °, the distance from the target 11 is between the target 11 side end and the opposite end of the deposition surface 15a. A relatively large difference occurs, and the sputtered particles are diffused at a position far away from the target 11 by a distance that travels a long distance, so that the density of the sputtered particles is reduced.

  As described above, the opening 123 of the shielding plate 120 has a narrower width closer to the target 11 and a wider distance farther from the target 11. Therefore, the portion of the film formation surface 15a that is closer to the target 11 is exposed to the target 11 through the opening 123 in a shorter time. That is, of the deposition surface 15a of the substrate 15, a portion close to the target 11 is exposed to high density particles for a short time, and a distant portion is exposed to low density particles for a long time. As a result, substantially equal amounts of particles reach the portion near the target 11 and the portion far from the target 11 on the film formation surface 15a, and a film with a uniform film thickness is formed on the film formation surface 15a.

  Further, in this example, since the incident direction of the sputtered particles passing through the opening 123 of the shielding plate 120 with respect to the substrate 15 is regulated by the collimator 110, the film formed on the film formation surface 15a of the substrate 15 is In addition to uniform film thickness, it has an oblique structure with aligned orientation directions. When the entire region of the deposition surface 15a of the substrate 15 repeatedly passes through the opening 123 a plurality of times, a film having a larger film thickness than a film formed by passing once can be formed.

  In order to prevent the sputtered particles from entering the substrate 15 from a location different from the opening 123 of the shielding plate 120, a sputtered particle flight region is provided outside the outer peripheral edge of the shielding plate 120. An adhesion preventing plate to be restricted is appropriately disposed.

  Here, the shapes of the gaps between the plurality of regulating plates 111 in the collimator 110 are the distance between the irradiation point Pt and the film formation point Ps (TS distance), the size of the irradiation region 35 of the beam 12 on the target 11 (emission region). ), The pressure in the arrangement space of the substrate 15 (film formation pressure), the arrangement position of the collimator 110, the shape of the opening 123 of the shielding plate 120, and the like. In this example, the ratio (aspect ratio) between the width La in the gap between the plurality of regulating plates 111 and the depth Lb in the axial direction of the line segment PtPs is the entire width Lc of the narrow portion 123a in the opening 123 of the shielding plate 120. Is substantially the same as the ratio of the opening length Ld, for example, La: Lb = 1: 5. This aspect ratio is an example, and the present invention is not limited to this. As the aspect ratio La / Lb decreases, the incident direction of the sputtered particles with respect to the film formation surface 15a becomes uniform, but the amount of particles passing through the collimator 110 decreases and the film formation rate decreases. The film formation rate can be controlled by changing the irradiation region 35 of the beam 12 on the target 11.

  The shape of the collimator 110 is not particularly limited. For example, the slit width may be different between the central portion and the end portion with respect to the moving direction of the substrate 15. Moreover, the form by which an opening cross section becomes a grid | lattice form by a some board may be sufficient.

  The shape of the shielding plate 120 is not particularly limited, and may be a form having a plurality of openings. In addition, the width of the opening of the shielding plate 120 may be reduced stepwise from the side far from the target 11 toward the side closer to the target 11.

  The shape of the substrate 15 is not limited to a disc shape, and substrates having various shapes such as a rectangle, a square, and an ellipse can be used.

  Further, the method of sputtering the target 11 is not limited to the ion beam sputtering method as described above, and the vacuum evacuation is performed while supplying the sputtering gas into the vacuum chamber 20, and a vacuum atmosphere at a predetermined pressure is maintained inside the vacuum chamber 20. However, a negative voltage may be applied to the target 11 to perform sputtering.

  In addition, the present invention includes a vapor deposition method in which film formation is performed by discharging vapor of the film formation material from the opening of the container containing the film formation material and the liquid level (release source, target) of the film formation material into the vacuum chamber. It is.

  The present invention is not limited to the case where film formation is performed while moving only the substrate 15. While the substrate 15 is fixed, film formation may be performed while the collimator 110, the shielding plate 120, and the target 11 are moved together, or while the substrate 15, the collimator 110, the shielding plate 120, and the target 11 are moved. A film may be formed. In the case of performing film formation by ion beam sputtering, the irradiation position of the ion beam 12 is moved while the target 11 is fixed, or the irradiation position of the ion beam 12 is moved together with the movement of the target 11. The target 11 can be moved.

7 and 8 show a modification of the film forming apparatus IBS1 shown in FIGS.
In the example of FIG. 7, a plurality of targets 11 </ b> A, 11 </ b> B, 11 </ b> C are disposed in the vacuum chamber, and any one of the plurality of targets 11 </ b> A, 11 </ b> B, 11 </ b> C is selectively disposed at the irradiation position of the ion beam 12. The The plurality of targets 11A, 11B, and 11C may be made of the same material or different materials.

  In the example of FIG. 8, a plurality of targets 11D and 11E are arranged at different positions in the vacuum chamber, and particles are emitted from the targets 11D and 11E at the respective arrangement positions. The configuration may be such that each target 11D, 11E is irradiated with an ion beam from one ion gun, or the plurality of targets 11D, 11E may be individually irradiated with an ion beam from a plurality of ion guns.

  Such multi-source sputtering is preferably used to control the film structure to be formed or to form a film having a laminated structure. In this case, the posture (tilt, TS distance, etc.) of the substrate with respect to the target is controlled as necessary. In the case of forming a laminated film, for example, a film that does not require a columnar structure can be formed as a base film of an alignment film, and a film having a dense structure can be formed by ion beam sputtering. For example, an ion barrier film that blocks the movement of the eluted substance from the substrate can be formed. In addition, when controlling the film structure and forming the laminated film, the method is not limited to a method using a single vacuum chamber (film formation chamber), and a method using a plurality of vacuum chambers (film formation chambers) may be employed.

  9 and 10 show another modification of the film forming apparatus IBS1 shown in FIGS. FIG. 11 is a schematic plan view seen from the direction of arrow B shown in FIG. Note that the same components as those in the above-described film forming apparatus IBS1 are denoted by the same reference numerals, and the description thereof is omitted or simplified.

  As shown in FIGS. 9, 10, and 11, the film forming apparatus IBS <b> 2 is composed mainly of a vacuum chamber 20, an ion gun 30, a transfer system 40, and the like, similar to the film forming apparatus IBS <b> 1. A collimator 110 and a shielding plate 120 are disposed between the substrate 15 and the substrate 15. The beam angle θ1 is θ1 <90 °, and preferably 45 ° ≦ θ1 ≦ 70 °, for example, θ1 = 45 °. The tilt angle θ2 of the substrate 15 is θ2 <90 °, and preferably 45 ° ≦ θ2 <90 °. The inclination angle θ3 of the substrate 15 is θ3 <90 °, preferably θ3 <45 °, and more preferably θ3 ≦ 15 °.

  Further, unlike the film forming apparatus IBS1, the film forming apparatus IBS2 of this example forms a jig (rectifying jig 100) in which the collimator 110 and the shielding plate 120 are integrated. That is, the collimator 110 has a plurality of regulating plates 111 that are spaced apart from each other in the moving direction of the substrate 15 (in this example, the direction parallel to the film formation surface 15a). It has shielding parts 121 and 122 that block passage, and an opening 123 that is formed between the shielding parts 121 and 122 and allows particles to pass therethrough. A plurality of restricting plates 111 having a length approximately the same as the opening length Ld in the opening 123 of the shielding plate 120 are formed, and the collimator 110 is disposed on the front surface of the shielding plate 120.

  Also in the film forming apparatus IBS2 of this example, the sputtered particles emitted from the target 11 are incident on the film forming surface 15a of the substrate 15 obliquely based on the tilt angle θ3. The incident direction of the sputtered particles is regulated by the collimator 110, and the incident region of the sputtered particles is regulated by the shielding plate 120. As a result, a film having an oblique structure with a uniform film thickness and uniform orientation is formed on the substrate 15. Formed on top.

  Further, in this example, since the collimator 110 and the shielding plate 120 are integrated to form the rectifying jig 100, the jig 100 can be easily conveyed during cleaning. For example, when the film forming material deposited on the collimator 110 and the shielding plate 120 is cleaned, the collimator 110 and the shielding plate 120 are simultaneously and easily carried out of the vacuum chamber 20 by the conveying means of the rectifying jig 100. be able to. It is also easy to prepare a plurality of types of rectifying jigs 100 having different forms and selectively use any rectifying jig 100 according to the target film formation structure.

  12 and 13 are views showing how the substrate 15 and the rectifying jig 100 are carried in and out of the vacuum chamber 20 (film formation chamber).

  In the example of FIG. 12, a spare chamber (load chamber 25, unload chamber 26) for temporarily storing the substrate 15 and the rectifying jig 100 is provided between the vacuum chamber 20 and the external space. Shutters (not shown) that can be opened and closed as necessary are provided between the vacuum chamber 20 and the load chamber 25 and the unload chamber 26 and between the load chamber 25 and the unload chamber 26 and the external space. . In addition to the substrate transport system 50, the transport system 40 includes a jig transport system 60 that transports the rectifying jig 100. Note that reference numerals 130 and 131 shown in FIG. 12 are adhesion prevention plates for preventing the sputtered particles from entering the substrate 15 from a location different from the opening of the shielding plate 120.

  When the substrate 15 mounted on the tray 53 is carried into the load chamber 25 from the external space, the inside of the load chamber 25 is set to a vacuum atmosphere similar to that of the vacuum chamber 20 (film formation chamber). Thereafter, the substrate transport system 50 carries the substrate 15 from the load chamber 25 into the vacuum chamber 20 and moves the substrate 15 relative to the target 11 so as to cross the flight region of the particles emitted from the target 11. Move. When the film formation is completed, the substrate 15 is sent to the unload chamber 26 and then carried out to the external space.

  The rectifying jig 100 is carried in and out of the vacuum chamber 20 (film formation chamber) along the same path as the substrate 15. That is, the jig conveyance system 60 carries the rectifying jig 100 into the load chamber 25 from the external space, and then the rectifying jig 100 is discharged from the target 11 at a predetermined position in the vacuum chamber 20, that is, the target 11. The rectifying jig 100 is disposed in the flight region. The jig conveyance system 60 carries the rectifying jig 100 out of the vacuum chamber 20 to the outside at an appropriate timing. That is, the jig conveyance system 60 sends the rectifying jig 100 to the external space after sending the rectifying jig 100 to the unload chamber 26. The rectifying jig 100 carried out to the external space is carried into the vacuum chamber 20 again after being cleaned. Alternatively, another rectifying jig 100 is carried into the vacuum chamber 20.

  The timing of carrying in / out the rectifying jig 100 is controlled by the control device 70. For example, the control device 70 determines the carry-in / out timing of the rectifying jig 100 based on the number of processed substrates 15 and / or the accumulated processing time. Alternatively, the control device 70 determines the carry-in / out timing of the rectifying jig 100 based on the result of detecting the amount of deposits in the rectifying jig 100. The detection of the deposit can be performed using various detectors such as a film thickness measurement vibrator and an optical sensor, for example. By such control, the rectifying jig 100 can be replaced or cleaned at an appropriate timing.

  As described above, in the example of FIG. 12, the transport system 40 includes the jig transport system 60 in addition to the substrate transport system 50. Can be performed independently at any timing. Therefore, replacement or cleaning of the rectifying jig 100 is relatively easy, and the apparatus operating rate is improved. Moreover, the jig transport system 60 only needs to transport the rectifying jig 100 in which the collimator 110 and the shielding plate 120 are integrated, and the configuration is simple compared to the case where the collimator 110 and the shielding plate 120 are individually transported. Just do it.

  Furthermore, in the example of FIG. 12, the rectifying jig 100 can be replaced or cleaned at an appropriate timing to suppress deposition of the film forming material on the rectifying jig 100, and as a result, the rectifying jig 100. It is possible to prevent the film quality from being deteriorated due to the deposition of the film forming material.

  In the example of FIG. 12, a load chamber 25 and an unload chamber 26 are provided between the vacuum chamber 20 and the external space, so that the vacuum atmosphere in the vacuum chamber 20 is not destroyed. The substrate 15 and the rectifying jig 100 can be carried in and out. Therefore, the apparatus operating rate can be improved.

  Next, in the example of FIG. 13, as in the example of FIG. 12, the transport system 40 includes a jig transport system 60 in addition to the substrate transport system 50. In the example of FIG. 13, unlike the example of FIG. 12, a rectifying jig is provided between the vacuum chamber 20 (deposition chamber) and the external space, separately from the load chamber 25 and the unload chamber 26 for the substrate 15. A spare room 27 for 100 is provided. Shutters (not shown) that can be opened and closed as necessary are provided between the vacuum chamber 20 and the spare chamber 27 and between the spare chamber 27 and the external space.

  In the example of FIG. 13, similarly to the example of FIG. 12, in addition to the loading / unloading of the substrate 15, the loading / unloading of the rectifying jig 100 is performed independently at an arbitrary timing. In addition, in the example of FIG. 13, since the carry-in / out route of the rectifying jig 100 is different from that of the substrate 15, there are relatively few restrictions related to the carrying-in / out of the rectifying jig 100, and the apparatus operating rate is improved.

  Here, the spare chamber 27 for the rectifying jig 100 can be configured to have a storage mechanism for storing the plurality of rectifying jigs 100 and / or a cleaning mechanism for cleaning the rectifying jigs 100. In this case, for example, when the rectifying jig 100 is sent from the vacuum chamber 20 to the preliminary chamber 27, another rectifying jig 100 accommodated in the preliminary chamber 27 is carried into the vacuum chamber 20 and the vacuum chamber 20. The rectifying jig 100 taken out from the container is accommodated in the accommodating mechanism after being cleaned by the cleaning mechanism.

  Since the spare chamber 27 for the rectifying jig 100 has a housing mechanism and / or a cleaning mechanism, the rectifying jig 100 can be replaced or cleaned without taking the rectifying jig 100 into the external space. It becomes. Not only this but the structure which takes out the rectification jig | tool 100 from the preliminary | backup chamber 27, and can wash | clean separately can also be used.

  In the example of FIGS. 12 and 13 described above, the jig transport system 60 that unloads the rectifying jig 100 in which the collimator 110 and the shielding plate 120 are integrated has been described. The structure which conveys 110 and the shielding board 120 separately may be sufficient.

  In addition to the substrate transport system 50 and the jig transport system 60, the transport system 40 may include a transport system for a deposition plate that carries in and out the deposition plates 130 and 131. By replacing or cleaning the deposition preventive plates 130 and 131 at an appropriate timing to suppress the deposition of the deposition material on the deposition preventing plates 130 and 131, the deposition material deposition on the deposition preventing plates 130 and 131 is prevented. It is possible to prevent the film quality from being deteriorated.

(Liquid crystal device)
Next, the liquid crystal device of the present invention will be described.
FIG. 14 is a plan view schematically showing an example of the liquid crystal device of the present invention, and FIG. 15 is a partial cross-sectional view of the liquid crystal device.

  As shown in FIGS. 14 and 15, the liquid crystal device 500 is sandwiched between a substrate 502 and a substrate 503 made of a transparent material such as glass and quartz and facing each other, and the substrate 502 and the substrate 503. The liquid crystal layer 504 includes a sealing material 505 (adhesive) for bonding the substrate 502 and the substrate 503 together. Here, the liquid crystal device 500 is a horizontal alignment type that horizontally aligns the liquid crystal, and is an active matrix type transmissive liquid crystal device having a switching element such as a thin film transistor (TFT).

  As shown in FIG. 14, an image production region 501 is formed at the center of the substrate 502, and a sealing material 505 is disposed at the peripheral portion of the image production region 501. In the image formation region 501, a liquid crystal layer 504 (see FIG. 15) is sealed between the substrate 502 and the substrate 503. In this liquid crystal device 500, since the liquid crystal is directly disposed on the substrate by a coating method, the sealing material 505 is not provided with a liquid crystal injection port. On the outside of the sealing material 505, a scanning line driving element 510 that supplies a scanning signal to a scanning line (not shown) and a data line driving element 511 that supplies an image signal to a data line (not shown) are mounted. A wiring 531 is routed from the driving elements 510 and 511 to the connection terminal 530 formed at the end of the substrate 502.

On the other hand, a common electrode 521 is formed on the substrate 503. The common electrode 521 is formed almost all over the image production region 501, and inter-substrate conducting portions 525 are provided at the four corners of the common electrode 521. A wiring 532 is routed from the inter-substrate conductive portion 525 to the connection terminal 530.
Then, various signals input from the outside are supplied to the image production region 501 via the connection terminals 530, whereby the liquid crystal device 500 is driven.

As shown in FIG. 15, a plurality of pixel electrodes 520 arranged in a matrix are formed on the surface of the substrate 502 on the liquid crystal side. Specifically, on the surface of the substrate 502, pixel electrodes 520 arranged in a matrix, switching elements (not shown) connected to the pixel electrodes 520, and metal wirings (not shown) connected to the switching elements. ) And the like, and an alignment film 550 is provided so as to cover the pixel electrode 520.
A common electrode 521 made of a transparent material such as ITO is formed on the surface of the substrate 503 on the liquid crystal side, and an alignment film 551 is provided so as to cover the common electrode 521.

  The liquid crystal layer 504 sandwiched between the substrate 502 and the substrate 503 is made of nematic liquid crystal. Nematic liquid crystal molecules have a positive dielectric anisotropy, and are horizontally aligned along the substrate when a non-selection voltage is applied, and vertically aligned along the electric field direction when a selection voltage is applied. Nematic liquid crystal molecules have positive refractive index anisotropy, and the product (retardation) Δnd of the birefringence and the liquid crystal layer thickness is, for example, about 0.40 μm (60 ° C.). Note that the alignment regulating direction of the substrate 502 by the alignment film 550 and the alignment regulating direction of the substrate 503 by the alignment film 551 are set to be twisted by about 90 °. That is, the liquid crystal device 500 operates in a TN (Twisted Nematic) mode.

  Polarizing plates 560 and 561 are attached to the surfaces of the substrates 502 and 503 opposite to the liquid crystal, respectively. The polarizing plates 560 and 561 are made of, for example, a material obtained by doping polyvinyl alcohol (PVA) with iodine, and have a function of absorbing linearly polarized light in the absorption axis direction and transmitting linearly polarized light in the transmission axis direction. The polarizing plate 560 on the substrate 502 side is arranged so that the transmission axis thereof substantially coincides with the alignment regulating direction of the alignment film 550, and the polarizing plate 561 on the substrate 503 side has its transmission axis aligned with the alignment regulating direction of the alignment film 551. It arrange | positions so that it may correspond substantially. In order to improve heat dissipation, it is desirable that polarizing plates 560 and 561 are mounted on a support substrate made of a high thermal conductivity material such as sapphire glass or quartz, and spaced apart from the liquid crystal device 500. Of the light incident from the substrate 503 side, only linearly polarized light that coincides with the transmission axis of the polarizing plate 561 passes through the polarizing plate 561 and enters the liquid crystal layer 504.

At the time of non-selection voltage application, liquid crystal molecules horizontally aligned with respect to the substrate are arranged in a spiral manner by twisting about 90 ° along the thickness direction of the liquid crystal layer 504, and linearly polarized light incident on the liquid crystal layer 504 is The liquid crystal layer 504 is emitted after being rotated by about 90 °. This linearly polarized light coincides with the transmission axis of the polarizing plate 560 and passes through the polarizing plate 560.
On the other hand, when the selection voltage is applied, since the liquid crystal molecules are vertically aligned with respect to the substrate, the linearly polarized light incident on the liquid crystal layer 504 is emitted from the liquid crystal layer 504 without being rotated. This linearly polarized light is orthogonal to the transmission axis of the polarizing plate 560 and does not pass through the polarizing plate 560.

  In the liquid crystal device 500 described above, an inorganic alignment film containing an inorganic material as a main component is employed as the alignment films 550 and 551, and the inorganic alignment film is formed using the film forming apparatus and the film forming method described above. Yes. In an alignment film containing an organic material such as polyimide as a main component, organic substances are easily damaged by high-intensity light or heat. For example, organic matter is decomposed by light, and the decomposition is accelerated by absorbed heat. On the other hand, an inorganic alignment film containing an inorganic material as a main component has little optical deterioration and stable alignment characteristics over a long period of time. In addition, since the alignment film formed by using the film formation apparatus and the film formation method described above has an oblique structure with excellent orientation and a uniform film thickness, the liquid crystal device 500 is excellent in operational stability. .

As the inorganic material, various inorganic materials (inorganic oxides, metal oxides) other than SiO ₂ , SiO, Al ₂ O ₃ , ZnO ₂ , Ta ₂ O ₃ , TiO _{2 and the} like are employed. For example, the average thickness of the inorganic alignment film is preferably 0.02 to 0.3 μm, and more preferably 0.02 to 0.08 μm. If the thickness of the inorganic alignment film is too thin, the in-plane uniformity of the pretilt angle is liable to decrease, and this is not preferable, and if the thickness of the inorganic alignment film is too large, the driving voltage of the liquid crystal device 500 increases.

Note that the liquid crystal device functioning in the TN (Twisted Nematic) mode has been described as an example, but the present invention can also be applied to a liquid crystal device functioning in the VA (Vertical Alignment) mode.
In addition, the liquid crystal device including a TFT as a switching element has been described as an example, but the present invention can also be applied to a liquid crystal device including a two-terminal element such as a thin film diode as a switching element. is there.
Further, although the transmissive liquid crystal device has been described as an example, the present invention can also be applied to a reflective liquid crystal device.
Further, although an active liquid crystal device has been described as an example, the present invention can also be applied to a passive liquid crystal device.

(projector)
Next, the projector of the present invention will be described.
FIG. 16 is a diagram schematically showing an example of the projector of the present invention.
This projector PJ1 uses the liquid crystal device of the present invention as a light modulation means (liquid crystal light valve), and includes a transmissive liquid crystal light valve for each of different colors of R (red), G (green), and B (blue). 3 plate type intermittent display type color liquid crystal projector.

  As shown in FIG. 16, the projector PJ1 includes a light source 810, dichroic mirrors 813, 814, reflection mirrors 815, 816, 817, an incident lens 818, a relay lens 819, an exit lens 820, and a liquid crystal light valve 822. , 823, 824, a cross dichroic prism 825, and a projection lens 826.

The light source 810 includes a lamp 811 such as a metal halide and a reflector 812 that reflects the light of the lamp.
The dichroic mirror 813 transmits red light contained in white light from the light source 810 and reflects blue light and green light. The transmitted red light is reflected by the reflection mirror 817 and enters the red light liquid crystal light valve 822. The green light reflected by the dichroic mirror 813 is reflected by the dichroic mirror 814 and enters the liquid crystal light valve 822 for green light. Further, the blue light reflected by the dichroic mirror 813 passes through the dichroic mirror 814. For blue light, in order to prevent light loss due to a long optical path, a light guide means 821 including a relay lens system including an incident lens 818, a relay lens 819, and an exit lens 820 is provided. Blue light is incident on the blue light liquid crystal light valve 824 via the light guiding means 821.

  The three color lights modulated by the liquid crystal light valves 822, 823, and 824 are incident on the cross dichroic prism 825. This cross dichroic prism 825 is formed by bonding four right-angle prisms, and a dielectric multilayer film reflecting red light and a dielectric multilayer film reflecting blue light are formed in an X shape at the interface. Yes. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected on the screen 827 by the projection lens 826 which is a projection optical system, and the image is enlarged and displayed.

  According to the projector PJ1 described above, since the liquid crystal light valves 822, 823, and 824 employing the inorganic alignment film are provided, the light deterioration is small. Moreover, the orientation of the inorganic alignment film is excellent and has high reliability.

In this example, the liquid crystal device of the present invention is adopted for each of the liquid crystal light valves for red light, green light, and blue light. However, the liquid crystal device is not necessarily applied to all liquid crystal light valves. When applied to at least one of the liquid crystal light valves of R, G, and B, the effect can be obtained. The liquid crystal device of the present invention is particularly effective when applied to a liquid crystal light valve for blue light (B) having high light energy.
Further, although the description has been given by taking a three-plate projection display device (projector) as an example, the present invention can also be applied to a single-plate projection display device or a direct-view display device.

  The liquid crystal device of the present invention can also be applied to electronic devices other than projectors. As a specific example, a mobile phone including the liquid crystal device of the present invention in a display portion can be given. Other electronic devices include, for example, a video camera, a personal computer, a head mounted display, a fax machine with a display function, a digital camera finder, a portable TV, a PDA (Personal Digital Assistant), an electronic notebook, and an electric bulletin board. And advertising announcement displays.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims. It is understood that it belongs to.

The figure for demonstrating the basic composition of the film-forming apparatus of this invention. The perspective view which shows the principal part structure of the film-forming apparatus of FIG. The figure which shows the structural example of a board | substrate conveyance system. The figure which shows typically the mode of the change of the relative attitude | position of the board | substrate with respect to a target. The figure which shows a mode that an orthorhombic crystal grows with the particle | grains which came to the board | substrate. The typical top view seen from the arrow A direction shown in FIG. The figure which shows the modification of the film-forming apparatus of FIG.1 and FIG.2. The figure which shows the modification of the film-forming apparatus of FIG.1 and FIG.2. The figure which shows another modification of the film-forming apparatus of FIG.1 and FIG.2. The figure which shows another modification of the film-forming apparatus of FIG.1 and FIG.2. The typical top view seen from the arrow B direction shown in FIG. The figure which shows a mode that a board | substrate and a rectification jig are carried in / out with respect to a vacuum chamber (film-forming chamber). The figure which shows a mode that a board | substrate and a rectification jig are carried in / out with respect to a vacuum chamber (film-forming chamber). 1 is a plan view schematically showing an example of a liquid crystal device of the present invention. FIG. 13 is a partial cross-sectional view of the liquid crystal device of FIG. 12. FIG. 2 schematically shows an example of a projector according to the invention.

Explanation of symbols

  IBS1, IBS2 ... film forming apparatus, Pt ... irradiation point, Ps ... film forming point, [theta] 1 ... beam angle, [theta] 2 ... substrate tilt angle, [theta] 3 ... substrate tilt angle, 11 ... target, 11a ... sputter surface, 12 ... ion Beam: 15 ... Substrate, 15a ... Film-forming surface, 16 ... Normal, 20 ... Vacuum chamber (film formation chamber), 21 ... Vacuum exhaust system, 25 ... Load chamber (preliminary chamber), 26 ... Unload chamber (preliminary) Chamber), 27 ... preliminary chamber (for rectifying jig), 30 ... ion gun, 31 ... discharge port, 32 ... beam axis, 35 ... irradiation region (discharge region), 40 ... transport system, 50 ... substrate transport system, 51 ... Central axis of movement, PT1 ... first position, PT2 ... second position, 53 ... tray, 54 ... conveying mechanism, 55 ... height regulating member, 60 ... jig conveying system, 70 ... control device, 100 ... rectifying jig, 110 ... collimator, 111 ... regulating plate, 120 ... shielding plate, 121, 12 DESCRIPTION OF SYMBOLS Shielding part, 123 ... Opening part, 123a ... Narrow part, 123b ... Wide part, 130, 131 ... Anti-adhesion plate, 500 ... Liquid crystal device, 504 ... Liquid crystal layer, 550, 551 ... Alignment film, PJ1 ... Projector, 822 , 823, 824 ... Liquid crystal light valve (liquid crystal device).

Claims (13)

A film forming apparatus for attaching particles released from a target to a substrate,
A substrate transport system for moving the substrate relative to the target so as to cross a flight region of particles emitted from the target;
A rectifying jig which is disposed in a flight region of the particles and regulates the incident direction and / or the incident region of the particles with respect to the substrate;
A film forming apparatus comprising: a jig conveying system that carries the rectifying jig into and out of the flying region of the particles. The rectifying jig includes a collimator that regulates the incident direction of the particles with respect to the substrate, and a shielding plate that regulates the incident area of the particles with respect to the substrate,
The film forming apparatus according to claim 1, wherein the collimator and the shielding plate are integrated.   The film forming apparatus according to claim 1, further comprising a control device that controls a timing of carrying in and out of the rectifying jig.   The film forming apparatus according to claim 3, wherein the control device determines the carry-in / out timing of the rectifying jig based on the number of processed substrates and / or the accumulated processing time.   The film forming apparatus according to claim 3, wherein the control device determines a timing for carrying in and out the rectifying jig based on a result of detecting an amount of deposits in the rectifying jig. A film forming chamber set to a vacuum pressure;
6. The apparatus according to claim 1, further comprising: a spare chamber provided between the film forming chamber and the external space and temporarily accommodating the substrate and / or the rectifying jig. The film-forming apparatus in any one.   The film forming apparatus according to claim 6, wherein a preliminary chamber for the substrate and a preliminary chamber for the rectifying jig are provided separately.   The preliminary chamber of the rectifying jig has a housing mechanism that accommodates a plurality of the rectifying jigs and / or a cleaning mechanism that cleans the rectifying jigs. Deposition device.   The film forming apparatus according to claim 1, wherein an incident angle when the particles are incident on one surface of the substrate is 15 ° or less.   The film forming apparatus according to claim 1, wherein the target mainly includes an inorganic material.   A liquid crystal device comprising an alignment film formed by the film forming apparatus according to claim 1.   The liquid crystal device according to claim 11, wherein the alignment film is an inorganic alignment film containing an inorganic material as a main component.   A projector comprising the liquid crystal device according to claim 12.

Images