JP2007206535A - Manufacturing method for liquid crystal device, liquid crystal device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a liquid crystal device with which an alignment film having high reliability and superior aligning power can be formed with high mass-productivity. <P>SOLUTION: In the manufacturing method for the liquid crystal device, a stage of forming the alignment film comprises: a stage of discharging an alignment film material made of an inorganic material obliquely onto a substrate W becoming a body to be treated from a target 205 by using a sputtering device 203 and depositing an inorganic alignment layer having a plurality of columnar structures crystal-grown obliquely to the normal direction of the substrate W on the substrate W; and a stage of surface-treating the top surface of the inorganic alignment layer with a silane coupling agent or alcohol and forming an organic alignment layer of a monomolecular film of an organic material chemically bonded to the inorganic alignment layer on the top surface of the inorganic alignment layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a liquid crystal device, a liquid crystal device, and an electronic apparatus.

  In general, an alignment film of a liquid crystal device is obtained by rubbing the surface of a polymer film made of polyimide or the like to which a side chain alkyl group is added. Since this alignment film is organic, when used in a device equipped with a high output light source such as a liquid crystal projector, the alignment film may be damaged by strong light or heat irradiated from the light source, resulting in alignment failure. There is. Especially when the projector is downsized and the brightness is increased, the energy per unit area incident on the liquid crystal device is increased, the polyimide itself is decomposed by the absorption of the incident light, and the heat generated by the absorption of the light. This further accelerates the decomposition. As a result, a great deal of damage is added to the alignment film, which degrades the display characteristics of the device. In addition, unnecessary scratches and dust generation are generated after rubbing, which adversely affects display characteristics and yield.

Then, adoption of the alignment film (inorganic alignment film) which consists of an inorganic material excellent in light resistance and heat resistance is examined. As a method for producing this inorganic alignment film, an ion beam sputtering method, an oblique deposition method, or the like has been proposed. In addition to the alignment film made of such an inorganic material, a technique for forming an alignment film by irradiating a diamond-like carbon film (DLC) with a charged particle beam has also been proposed (for example, Patent Document 1). reference).
JP 2000-222873 A

  As a method for forming the inorganic alignment film, a vacuum deposition method is about to be mass-produced. However, since the vapor deposition method forms a film at a high degree of vacuum, the mean free path of the film forming material (alignment film material) becomes long, so the film forming chamber composed of a vacuum chamber and the like becomes large, and the burden on the apparatus is large. Become. In addition, vapor deposition originally has a slow film formation rate of 2 nm / second at the maximum, and oblique vapor deposition requires film formation from a very inclined direction of 60 ° to 80 ° with respect to the substrate. It was difficult to obtain the film rate and film thickness distribution. In addition, since the energy of the cluster-like particles generated from the evaporation source is small, for example, the cluster-like particles adhere to the inner wall surface of the apparatus and then fall off from the inner wall surface due to vibration or the like, causing dust generation, which is generated on the substrate. There is a risk of adhering as a foreign matter. Furthermore, it is difficult to control the pretilt angle of the liquid crystal molecules compared to the organic alignment film, and it is difficult to obtain a uniform alignment state.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method of manufacturing a liquid crystal device capable of forming an alignment film having high reliability and excellent alignment force with high productivity. It is another object of the present invention to provide a liquid crystal device and an electronic device that have high display quality and high reliability by including an alignment film having such excellent characteristics.

In order to solve the above problems, a method for manufacturing a liquid crystal device according to the present invention includes a liquid crystal sandwiched between a pair of opposing substrates, and an alignment film is formed on the inner surface side of at least one of the pair of substrates. In the manufacturing method of the liquid crystal device formed, the alignment film forming step uses a sputtering apparatus to obliquely release the alignment film material made of an inorganic material onto the substrate to be processed from the target. A step of forming an inorganic alignment layer having a plurality of columnar structures grown on the substrate in an oblique direction with respect to a normal direction of the substrate; and a surface of the inorganic alignment layer is formed with a silane coupling agent or alcohol. And a step of forming an organic alignment layer made of a monomolecular film of an organic material chemically bonded to the inorganic alignment layer on the surface of the inorganic alignment layer.
According to this method, since most of the alignment film is formed of an inorganic material, even when mounted on a device equipped with a high output light source such as a liquid crystal projector, there is little damage due to light energy and reliability. Will be expensive.
In addition, since the alignment of the liquid crystal can be controlled by the intermolecular interaction between the organic functional group of the organic alignment film and the liquid crystal molecules, compared to the case where the alignment of the liquid crystal is controlled only by the surface shape of the inorganic alignment layer, Excellent orientation characteristics. In addition, since the organic alignment layer is chemically bonded to the columnar structure whose crystal has grown in an oblique direction, the organic functional group of the organic alignment layer can be inclined in an oblique direction with respect to the substrate. The corner can be controlled well.
Further, the surface of silicon oxide generally used as an inorganic alignment layer has a large number of polarized hydroxyl groups, and there is a problem that the liquid crystal deteriorates due to the adsorption of water to these hydroxyl groups. In the apparatus, since the surface of the inorganic alignment layer is covered with the organic alignment layer, the water repellency is increased and the durability can be improved.
In addition, since the sputtering method using a sputtering device is adopted as a method for forming the inorganic alignment layer, film formation can be performed at a lower degree of vacuum than, for example, a vapor deposition method, thus reducing the burden on a vacuum device such as a vacuum pump. can do. Furthermore, since the film is formed at a lower degree of vacuum than the vapor deposition method, the mean free path of the film formation material (alignment film material) is shortened, and therefore, a composition comprising a vacuum chamber or the like is compared with the case where the vapor deposition method is employed. A membrane chamber can be reduced in size and the burden regarding an apparatus can be reduced.
Further, the energy of the sputtered particles (alignment film material) emitted from the target by the sputtering method is, for example, 10 eV, and the energy of the cluster-like particles generated from the vapor deposition source by the vapor deposition method is, for example, 0.1 eV. Therefore, the sputtered particles have higher adhesion than the clustered particles obtained by the vapor deposition method. Therefore, in the case of cluster-like particles, for example, particles attached to the inner wall surface of the apparatus may fall off from the inner wall surface, for example, due to vibration, etc. In the case of sputtered particles, once adhering to the inner wall surface or the like, it does not easily fall off due to its high adhesion, so that the disadvantage of adhering as foreign matter on the substrate is avoided.

In the present invention, the organic alignment layer may have an alkyl group as an organic functional group, and a major axis direction of the alkyl group may be substantially parallel to a crystal growth direction of the columnar structure. . In the present invention, the organic alignment layer has an alkyl group as an organic functional group, and the major axis direction of the alkyl group is substantially the same as the crystal growth direction of the columnar structure in a plane parallel to the substrate. It can be vertical.
According to these methods, the alignment direction of the liquid crystal molecules can be easily controlled by the organic functional group of the organic alignment layer. For example, in the former method, the initial alignment state of the liquid crystal can be perpendicular to the substrate. In the latter method, the initial alignment state of the liquid crystal can be horizontal with respect to the substrate.

In the present invention, when forming the inorganic alignment layer, a grounded metal plate is provided between the target and the substrate for blocking the plasma so that the substrate is not exposed to the plasma generated on the target side. And an opening for selectively allowing the alignment film material released from the target to pass through at a position in an oblique direction having a predetermined angle with respect to the target of the metal plate. It is desirable to keep it.
According to this method, the alignment film material released from the target is selectively placed at a position in a diagonal direction at a predetermined angle with respect to the target on a metal plate disposed between the target and the substrate. Since an opening for passing through is provided, the incident angle of the sputtered particles emitted from the target to the substrate can be regulated by the opening, and thus a columnar structure having a desired shape, that is, a columnar structure having a desired angle. An inorganic alignment layer with good orientation can be formed. Since the inorganic alignment layer can be formed with a desired angle and good orientation in this way, the pre-tilt angle of the liquid crystal molecules can be better controlled by the obtained alignment film. The alignment state can be freely controlled from the TN mode to the VA mode.
In addition, since a grounded metal plate for shutting off the plasma is disposed between the target and the substrate, electrons and ionic substances can be trapped by the metal plate, and thus the substrate is the target. Exposure to plasma generated on the side can be suppressed. Therefore, it is possible to prevent the disadvantage that an alignment film having a desired shape cannot be obtained, and to form the inorganic alignment film more favorably.

In the present invention, a transfer means for transferring the substrate is provided on the side of the metal plate opposite to the target, and the target is substantially orthogonal to the moving direction of the substrate by the transfer means. It is desirable to extend in a direction and be elongated in a line shape, and the opening is formed to be elongated corresponding to the target.
According to this method, while the substrate is transferred by the transfer means, the alignment film material is released from the line-shaped target, and the film corresponding to the length of the target is formed on the substrate by continuously performing film formation by sputtering. Thus, an inorganic alignment layer can be formed in a planar shape, and thus productivity can be improved.

The liquid crystal device of the present invention is a liquid crystal device in which liquid crystal is sandwiched between a pair of opposing substrates, and an alignment film is formed on the inner surface side of at least one of the pair of substrates, The alignment film is composed of an inorganic alignment layer made of an inorganic material having a plurality of columnar structures grown in a direction oblique to the normal direction of the substrate, and a single molecule of an organic material chemically bonded to the surface of the inorganic alignment layer And an organic alignment layer made of a film.
According to this configuration, since most of the alignment film is composed of an inorganic material, even when mounted on a device equipped with a high output light source such as a liquid crystal projector, there is little damage due to light energy and reliability. Will be expensive. In addition, since the alignment of the liquid crystal can be controlled by the organic alignment layer, and the pretilt angle of the liquid crystal can be controlled by the crystal growth direction of the columnar structure of the inorganic alignment layer, the alignment characteristics are excellent. Furthermore, since the moisture-proof property can be improved by covering the surface of the inorganic alignment layer with the organic alignment layer, the reliability is further improved.

An electronic apparatus according to the present invention includes a liquid crystal device manufactured by the above-described method for manufacturing a liquid crystal device of the present invention, or the above-described liquid crystal device of the present invention.
According to this configuration, since the highly reliable liquid crystal device is provided, the electronic device itself is also highly reliable.

  Hereinafter, an embodiment of the present invention will be described as an example. In the following description, various structures are illustrated with reference to the drawings, but the structures shown in these drawings may be shown with dimensions different from those of the actual structures in order to easily show the characteristic portions. In this embodiment, an active matrix transmissive liquid crystal device including a thin film transistor (TFT) as a pixel switching element will be described as an example. This liquid crystal device can be suitably used, for example, as a light valve (light modulation means) of a projector.

[Liquid Crystal Device]
First, the configuration of the liquid crystal device 100 will be described. FIG. 1A is a plan view of the liquid crystal device 100 as viewed from the side of the counter substrate together with each component, and FIG. 1B is along the line HH ′ shown in FIG. 1 of the liquid crystal device 100. It is sectional drawing.

  As shown in FIG. 1, the liquid crystal device 100 according to the present embodiment includes a TFT array substrate (first substrate) 10 and a counter substrate (second substrate) 20 that are arranged to face each other. The TFT array substrate 10 and the counter substrate 20 are bonded together by a sealing material 52 having a substantially rectangular frame shape in plan view provided on the outer periphery of these substrates, and the liquid crystal 50 is sealed in a region partitioned by the sealing material 52. Yes. A light shielding film (peripheral parting) 53 having a rectangular frame shape in plan view along the inner peripheral side of the sealing material 52 is formed inside the formation area of the sealing material 52, and the area inside the light shielding film 53 is an image display area 10a. It has become. In the area outside the sealing material 52, the data line driving circuit 101 and the external circuit mounting terminal 102 are formed along one side (the lower side in the drawing) of the TFT array substrate 10, and the two sides adjacent to this one side are formed. Scanning line driving circuits 104 and 104 are formed along the lines to constitute peripheral circuits. The remaining one side (the upper side in the figure) of the TFT array substrate 10 is provided with a plurality of wirings 105 that connect between the scanning line drive circuits 104 on both sides of the image display region 10a. In addition, an inter-substrate conductive material 106 for providing electrical continuity between the TFT array substrate 10 and the counter substrate 20 is disposed at each corner of the counter substrate 20.

FIG. 2 is a diagram showing equivalent circuits such as various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal device 100.
As shown in FIG. 2, a plurality of pixels D are configured in a matrix in the image display region 10a, and a pixel switching TFT 30 is formed in each of the pixels D, and the pixel signal S1. , S 2,..., Sn are electrically connected to the source of the TFT 30. Pixel signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is obtained by turning on the TFT 30 as a switching element for a certain period. Write to each pixel at a predetermined timing. The pixel signals S1, S2,..., Sn written in the liquid crystal via the pixel electrode 9 in this way are held for a certain period with the counter electrode 21 of the counter substrate 20 shown in FIG. Further, in order to prevent the held pixel signals S1, S2,..., Sn from leaking, a storage capacitor 17 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9 and the counter electrode 21. Reference numeral 3 b denotes a capacitor line that constitutes the storage capacitor 17.

  Next, the structure of the pixel portion of the TFT array substrate of the liquid crystal device of the present embodiment will be described in detail with reference to FIGS. FIG. 3 is a plan view of a plurality of adjacent pixel groups on the TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. are formed, and FIG. 4 is a cross-sectional view taken along the line AA ′ of FIG. is there. FIG. 4 illustrates the case where the upper side in the figure is the light incident side and the lower side in the figure is the viewing side (observer side).

  As shown in FIG. 3, on the TFT array substrate 10 of the liquid crystal device 100, a plurality of transparent pixel electrodes 9 (outlined by dotted line portions 9a) are provided in a matrix form. A data line 6a, a scanning line 3a, and a capacitor line 3b are provided along the vertical and horizontal boundaries. The data line 6a is electrically connected to a source region described later in the semiconductor layer 1a made of a polysilicon film through the contact hole 5, and the pixel electrode 9 is connected to the source layer in the semiconductor layer 1a through the contact hole 8. It is electrically connected to a drain region described later. The pixel electrode pitch is about 20 μm or less, preferably about 15 μm or less. In addition, the scanning line 3a is disposed so as to face a channel region (a hatched region rising to the right in the drawing) described later in the semiconductor layer 1a, and the scanning line 3a itself functions as a gate electrode.

  The capacitor line 3b is formed from a main line portion (that is, a first region formed along the scanning line 3a in plan view) that extends substantially linearly along the scanning line 3a and a portion intersecting the data line 6a. And a protruding portion (that is, a second region extending along the data line 6 a when viewed in a plan view) that protrudes forward (upward in the drawing) along the data line 6 a. A plurality of first light-shielding films 11a are provided in a region indicated by oblique lines rising to the right in the drawing. More specifically, the first light-shielding film 11a is provided at a position that covers the TFT including the channel region of the semiconductor layer 1a when viewed from the TFT array substrate side in the pixel portion, and further, the main line portion of the capacitor line 3b. And a main line portion that extends linearly along the scanning line 3a and a protruding portion that protrudes from the location intersecting the data line 6a to the rear stage side (downward in the figure) adjacent to the data line 6a. ing. The tip of the downward protruding portion in each stage (pixel row) of the first light shielding film 11a overlaps the tip of the upward protruding portion of the capacitor line 3b in the next stage under the data line 6a. A contact hole 13 for electrically connecting the first light-shielding film 11a and the capacitor line 3b to each other is provided at the overlapping portion. In other words, in the present embodiment, the first light-shielding film 11a is electrically connected to the upstream or downstream capacitor line 3b through the contact hole 13.

  Next, referring to the cross-sectional structure of FIG. 4, the liquid crystal device of the present embodiment has a pair of transparent substrates, the TFT array substrate 10 forming one of the substrates, and the other disposed opposite to the TFT array substrate 10. A liquid crystal layer 50 is sandwiched between the counter substrate 20 and the counter substrate 20. The liquid crystal layer 50 is made of a liquid crystal having an initial alignment state of vertical alignment and a negative dielectric anisotropy, and the transmissive liquid crystal device is a display device of a vertical alignment mode.

  The TFT array substrate 10 is provided with pixel electrodes 9 made of a transparent conductive film such as indium tin oxide (hereinafter abbreviated as ITO), and each pixel electrode 9 on the TFT array substrate 10 is provided on each TFT electrode 10. A TFT 30 that controls switching of each pixel electrode 9 is provided at an adjacent position. The TFT 30 has an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a, a channel region 1a ′ of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a, and the scanning line 3a and the semiconductor layer 1a. The insulating thin film 2 to be insulated, the data line 6a, the low concentration source region 1b and the low concentration drain region 1c of the semiconductor layer 1a, and the high concentration source region 1d and the high concentration drain region 1e of the semiconductor layer 1a are provided.

  A second contact hole 5 leading to the high concentration source region 1d and a contact hole 8 leading to the high concentration drain region 1e are formed on the TFT array substrate 10 including the scanning line 3a and the insulating thin film 2, respectively. An interlayer insulating film 4 is formed. That is, the data line 6 a is electrically connected to the high concentration source region 1 d through the contact hole 5 that penetrates the second interlayer insulating film 4. Further, on the data line 6a and the second interlayer insulating film 4, a third interlayer insulating film 7 in which a contact hole 8 leading to the high concentration drain region 1e is formed is formed. That is, the high concentration drain region 1 e is electrically connected to the pixel electrode 9 through the contact hole 8 that penetrates the second interlayer insulating film 4 and the third interlayer insulating film 7. An alignment film 16 is formed on the third interlayer insulating film 7 and the pixel electrode 9.

  Further, the insulating thin film 2 serving as a gate insulating film is extended from a position facing the gate electrode formed of a part of the scanning line 3a and used as a dielectric film, and the semiconductor layer 1a is extended to extend the first storage capacitor electrode 1f. Further, a part of the capacitor line 3b facing these is used as the second storage capacitor electrode, whereby the storage capacitor 17 is configured.

  A first light shielding film 11 a is provided at a position corresponding to each pixel switching TFT 30 on the surface of the TFT array substrate 10. A first interlayer insulating film (insulator layer) 12 made of, for example, highly insulating glass, a silicon oxide film, a silicon nitride film, or the like is provided between the first light shielding film 11a and the TFT 30. Further, the first interlayer insulating film 12 is formed on the entire surface of the TFT array substrate 10, and the surface is polished and planarized in order to eliminate the step of the first light shielding film 111 pattern.

  On the other hand, on the counter substrate 20, the second light shielding film 23 is formed in a region facing the formation region of the data line 6 a, the scanning line 3 a, and the pixel switching TFT 30 on the TFT array substrate 10, that is, a region other than the opening region of each pixel portion. Is provided. Further, a counter electrode (common electrode) 21 is provided over the entire surface of the counter substrate 20 including the second light shielding film 23. The counter electrode 21 is also formed of a transparent conductive film such as an ITO film, similarly to the pixel electrode 9 of the TFT array substrate 10. Due to the presence of the second light shielding film 23, incident light from the counter substrate 20 side does not enter the channel region 1 a ′, the low concentration source region 1 b, or the low concentration drain region 1 c of the semiconductor layer 1 a of the pixel switching TFT 30. Absent. Further, an alignment film 22 is provided on the counter electrode 21.

Here, the configuration of the alignment film 16 on the TFT array substrate side and the alignment film 22 on the counter substrate side will be described. FIG. 5 is a schematic diagram showing a cross-sectional structure of these alignment films.
As shown in FIG. 5, the alignment film 16 on the TFT array substrate 10 side includes an inorganic alignment layer 16A as a base made of an inorganic material, and an organic alignment layer 16B made of an organic material chemically bonded to the surface of the inorganic alignment layer 16A. And. The alignment film 22 on the counter substrate 20 side includes a base inorganic alignment layer 22A made of an inorganic material and an organic alignment layer 22B made of an organic material chemically bonded to the surface of the inorganic alignment layer 22A.

The inorganic alignment layers 16A and 22A have a thickness of 0.02 μm to 0.3 μm (preferably, a silicon oxide such as SiO ₂ or SiO, or a metal oxide such as Al ₂ O ₃ , ZnO, MgO, or ITO). 0.02 μm to 0.08 μm). The inorganic alignment layers 16A and 22A are composed of innumerable columnar structures 16a and 22a. These columnar structures 16a and 22a are formed by obliquely sputtering an inorganic alignment film material (inorganic alignment film material) using an alignment film manufacturing apparatus described later. Therefore, the columnar structures 16a and 22a Each is arranged in a state where crystals are grown obliquely with respect to the normal direction of the substrates 10 and 20.

  When the inorganic alignment film material is obliquely sputtered, the resulting film becomes a dense film. For this reason, if the liquid crystal molecules are aligned only by the inorganic alignment layers 16A and 22A, the liquid crystal molecules are aligned horizontally along the irregular shape of the surface of the inorganic alignment films 16A and 22A, and a vertical alignment state can be realized. Disappear. Further, in the columnar structures 16a and 22a formed in this way, when viewed at the atomic level, as shown in FIG. 6A, a large number of polarized hydroxyl groups exist on the surface, and silanol groups (Si -OH). This hydroxyl group has activity as a Bronsted acid point, and easily adsorbs or reacts with an impurity present on the alignment film, particularly a compound having a polar group such as water.

  Therefore, in the present embodiment, the organic alignment layers 16B and 22B are formed on the surfaces of the inorganic alignment layers 16A and 22A, and a good vertical alignment state is realized by the side chain alkyl group of the organic alignment layers 16B and 22B. By chemically bonding the organic alignment layers 16B and 22B to the silanol group, the activity of the hydroxyl group in the silanol group is lost, and the above-described disadvantages due to the hydroxyl group are avoided. The organic alignment layers 16B and 22B are formed, for example, by surface-treating the inorganic alignment films 16A and 22A with a silane coupling agent having an organic functional group such as an alkyl group.

Here, the silane coupling material has an organic functional unit and a hydrolyzable group in one molecule, thereby linking the inorganic substance and the organic resin, and the physical strength, water resistance, light resistance, adhesion of the material. It is possible to improve the property. Specifically, a silicon atom (Si) has one organic functional group and a functional group that reacts with a few inorganic substances, and is represented by the following formula 1.
YSiX ₃ (Formula 1)
X: hydrolysis group bonded to a silicon atom, -OR, -Cl, -NR _2, etc. Y: organic functional group reactive such as an organic matrix, an alkyl group (-R), such as

  When the surfaces of the inorganic alignment layers 16A and 22A are treated with such a silane coupling agent, as shown in FIG. 6B, silanol groups (Si—OH) on the surfaces of the inorganic alignment layers 16A and 22A and silane couplings. A hydrolysis reaction occurs with the hydrolyzing group (X) of the agent, and a monomolecular film of an organic material composed of the organic functional group (Y) is formed. The orientation direction of the liquid crystal molecules can be controlled by the intermolecular interaction between the organic functional group (Y) and the liquid crystal molecules. For example, when a long-chain alkyl group is used as the organic functional group (Y), if the major axis direction of the alkyl group is parallel to the crystal growth direction of the columnar structures 16a and 22a, the initial liquid crystal molecules The alignment state (alignment state when a non-selection voltage is applied) can be perpendicular to the substrate. Further, if the major axis direction of the alkyl group is in a direction substantially perpendicular to the crystal growth direction of the columnar structures 16a and 22a in a plane parallel to the substrate, the initial alignment state of the liquid crystal molecules is horizontal to the substrate. It can be oriented. In addition, since the organic functional group (Y) is chemically bonded to the columnar structures 16a and 22a grown in an oblique direction with respect to the substrates 10 and 20, the organic functional group (Y) is bonded to the substrate 10 and The tilt angle of the liquid crystal molecules can be controlled in an oblique direction with respect to 20.

The silane coupling material to be used is not particularly limited as long as the organic functional group has good orientation and water repellency, and has good light resistance. Specifically, The organic functional group (Y) in the formula is preferably an alkyl group. Also, the hydrolyzable group is not particularly limited, but it is preferable because, for example, it is difficult to cause steric hindrance when a low molecular weight group such as a methoxy group (—OCH ₃ ) is reacted and added to the surface of the inorganic alignment layer. . When an alkyl group (C _n H _{2n + 1} ) is used as the organic functional group (Y), higher orientation, water repellency, and light resistance can be imparted as n is larger.

  In the present embodiment, the silane coupling agent is used as the material for performing the surface treatment of the inorganic alignment layer. However, similar effects can be obtained by using alcohol instead of the silane coupling agent.

[Method of manufacturing liquid crystal device]
Next, a method for manufacturing the liquid crystal device 100 will be described. In the following, a method for forming an alignment film will be mainly described. Among the TFT array substrate 10 and the counter substrate 20, various wirings such as the scanning lines 3a, data lines 6a, and capacitor lines 3b, driving circuit elements such as the TFT 30, It is assumed that the formation of the pixel electrode 9 and the counter electrode 21 has already been completed.

[Method for forming alignment film]
<Alignment film manufacturing equipment>
FIG. 7 is a schematic configuration diagram showing an embodiment of an alignment film manufacturing apparatus. Reference numeral 201 in the figure denotes a manufacturing apparatus (hereinafter referred to as a manufacturing apparatus) for manufacturing the inorganic alignment layers 16A and 22A among the alignment films 16 and 22 on the surface of the substrate W as a constituent member of the liquid crystal device. . The manufacturing apparatus 201 includes a film forming chamber 202 formed by a vacuum chamber, and a sputtering method for forming an inorganic alignment layer by forming an alignment film material on the substrate W by sputtering in the film forming chamber 202. Device 203.

  The film forming chamber 202 is connected to and communicated with a load lock chamber (not shown) for carrying the substrate W into the film forming chamber 202. An exhaust control device (not shown) for controlling the internal pressure and obtaining a desired degree of vacuum is connected to the film forming chamber 202 via a pipe or the like. An exhaust control device (not shown) that independently adjusts the load lock chamber to a vacuum atmosphere is also connected to the load lock chamber. A gate valve (not shown) is provided between the load lock chamber and the film forming chamber 202 to hermetically close communication between the load lock chamber and the film forming chamber 202. The substrate W can be carried in, and the substrate W can be carried out from the film formation chamber 202 to the load lock chamber without greatly reducing the degree of vacuum in the film formation chamber 202.

The sputtering apparatus 203 provided in the film forming chamber 202 is a known RF sputtering apparatus in the present embodiment, and includes a high-frequency power source 204 and a target 205 held by an electrode electrically connected to the high-frequency power source 204. It is what has. Then, plasma P is generated in the vicinity of the target 205, in this embodiment, below the target 205, and a discharge gas such as Ar gas or O ₂ gas is introduced into the plasma atmosphere to add energy to the discharge gas. Then, the ions are made to collide with the target 205, and particles, that is, sputtered particles are knocked out from the target 205 to form a film on the substrate W.

The target 205 is made of an inorganic alignment film material formed on the substrate W, such as SiO ₂ or Al ₂ O _{3. In} the present embodiment, the target 205 has a rectangular parallelepiped shape that is particularly elongated in a line shape. . And the largest surface is installed so that it may become substantially horizontal, as shown by the continuous line in FIG. In FIG. 5, the length direction of the target 205 is a direction orthogonal to the paper surface. With respect to the target 205, the normal line L is inclined by a predetermined angle θ ₁ (for example, 45 °) with respect to the horizontal plane as shown by a two-dot chain line in FIG. May be installed.

  Below the sputtering apparatus 203 having such a configuration, a substrate holder 206 for holding the substrate W so that the surface to be processed (film formation surface) is horizontal is disposed. The substrate holder 206 is provided with known transfer means (not shown) for horizontally transferring the substrate holder 206 from the load lock chamber (not shown) side to the opposite side. Note that the transfer direction of the substrate W by this transfer means is the direction of arrow A in FIG. 7, and is therefore a direction orthogonal to the length direction of the target 205 described above.

  The substrate holder 206 is provided with a heater (heating means) 207 for heating the held substrate W, and further provided with a cooling means 208 for cooling the held substrate W. The heater 207 is connected to a power source and a temperature regulator (not shown), and is configured to heat the substrate holder 206 to a desired temperature, thereby heating the substrate W to a desired temperature. The cooling unit 208 includes a refrigerant pipe (not shown) provided in the substrate holder 206 and a refrigerant supply unit that circulates the refrigerant in the refrigerant pipe. From the refrigerant supply part (not shown), the refrigerant supply port 208a. The substrate holder 206 is cooled to a desired temperature by introducing the refrigerant into the inside and further circulating the refrigerant from the refrigerant discharge port 208b to the refrigerant supply unit, whereby the substrate W can be cooled to the desired temperature. It has been done. Here, the refrigerant supply unit is provided with a known cooling mechanism for controlling the temperature of the refrigerant.

  Further, a metal plate 209 is disposed between the target 205 and the substrate W in the film forming chamber 202. The metal plate 209 is made of a non-magnetic metal such as aluminum, and is grounded (grounded) by a wiring 209a as shown in FIG. Under such a configuration, the metal plate 209 operates the sputtering apparatus 203 to generate a plasma P in the vicinity (below) of the target 205 to form a plasma atmosphere. I try not to expose it. That is, since electrons and ionic substances in the plasma P can be trapped and removed by the grounded metal plate 209, the influence of the plasma P on the opposite side of the plasma atmosphere to the metal plate 209 is a substrate. It does not reach the W side.

  The metal plate 209 is provided with an opening 210 for selectively allowing the alignment film material emitted from the target 205 to pass through at an oblique position having a predetermined angle with respect to the target 205. . The opening 210 has an elongated slit shape, and its length direction is substantially parallel to the length direction of the target, that is, a direction orthogonal to the paper surface in FIG.

Here, the angle (predetermined angle) of the opening 210 with respect to the target 5 is the orientation angle of the alignment film to be formed, that is, the inclination angle of the central axis of the columnar structure to be formed with respect to the film formation surface of the substrate W. Determined accordingly. In the present embodiment, the angle of the position of the opening 210 (the angle indicated by θ ₂ in FIG. 7) is 45 °. That is, the opening 210 is formed and arranged in a direction inclined by 45 ° with respect to the normal direction (that is, the vertical direction) of the lower surface of the target 205 indicated by a solid line in FIG. Under such a configuration, as will be described later, a portion of the alignment film material (sputtered particles) emitted from the target 205 by sputtering passes through the opening 210 and is deposited on the substrate W, and the rest is the Most of the particles are deposited on the metal plate 209. Therefore, the alignment film material (sputtered particles) deposited on the substrate W is deposited and grown on the substrate W according to the incident angle because the incident angle to the substrate W is regulated by the position of the opening 210. The columnar structure is inclined in an oblique direction.

  In the present embodiment, the opening 210 is provided with a metal mesh 211 and a plurality of metal cylindrical bodies 212. The metal mesh 211 is made of a nonmagnetic metal such as aluminum like the metal plate 209, and is attached so as to cover the opening 210 on the bottom surface side of the metal plate 209. Under such a configuration, the metal mesh 211 is electrically connected to the metal plate 209 and is therefore grounded (grounded) via the metal plate 209. Therefore, similarly to the metal plate 209, the metal mesh 211 traps and removes electrons and ionic substances in the plasma P, thereby preventing the influence of the plasma P on the substrate W. That is, although the opening 210 is slit-shaped and has a relatively small area, the plasma P may leak from the opening 210 and come into contact with the substrate W. Therefore, such a metal mesh 211 is provided. Thus, the plasma P is prevented from leaking from the opening 210. Since the opening diameter of the metal mesh 211 can be reduced to, for example, about 2 to 3 mm, the effect of preventing the plasma P from leaking can be sufficiently exhibited by setting the opening diameter to a desired value.

  The metallic tubular body 212 is a hexagonal tubular body made of a non-magnetic metal such as aluminum, and is attached to the bottom surface side of the metallic mesh 211. Further, as shown in FIG. 8, the metal cylindrical body 212 constitutes a cylindrical body group 213 by arranging a large number of metal cylindrical bodies 212 in parallel. In FIG. 8, for ease of viewing, a part of the metal mesh 211 is omitted, but in the present embodiment, the opening 210 of the metal plate 209 has the metal mesh 211 on the bottom side as described above. The cylindrical body group 213 is attached through the metal mesh 211 so as to cover the opening 210.

Each metallic cylindrical body 212 constituting the cylindrical body group 213 is arranged such that its central axis is inclined at an angle substantially coincident with the above θ ₂ with respect to the normal direction to the horizontal plane, that is, the vertical direction. ing. Therefore, the central axis is inclined at the same inclination angle as the inclination angle with respect to the vertical direction of the straight line connecting the target 205 and the opening 210. With such a configuration, the sputtered particles emitted from the target 205 pass through the metal cylindrical body 212, and are thus better regulated to an angle at which the incident angle with respect to the substrate W is set. ing. In addition, although there is no restriction | limiting in particular about the length (height) of the metal cylindrical body 212, For example, it is set as about several cm-about dozen cm.

  In addition, the cylindrical body group 213 including the respective metallic cylindrical bodies 212 is arranged so that the openings of the respective metallic cylindrical bodies 212 have a close-packed structure called a honeycomb structure. Under such a configuration, the cylindrical body group 213 has a high space ratio formed by the openings of the respective metal cylindrical bodies 212, thereby reducing the pressure loss, and thus sputtered particles without impairing the film formability. The incident angle with respect to the substrate W can be well regulated.

  In this embodiment, the cylindrical body group 213 is also grounded (grounded) in the same manner as the metal plate 209, and this cylindrical body group 213 also traps electrons and ionic substances in the plasma P. This function is performed so that the influence of the plasma P does not reach the substrate W.

<Formation process of inorganic alignment layer>
Next, a method for forming an inorganic alignment layer using the manufacturing apparatus 201 will be described.
First, a quartz glass substrate on which a transparent conductive film made of ITO is formed is prepared as a substrate W, and this substrate W is put into a load lock chamber, where it is kept in a vacuum state. Separately, the exhaust control device is operated to adjust the inside of the film formation chamber 202 to a desired degree of vacuum.

Subsequently, the substrate W is transported into the film forming chamber 202 and set on the substrate holder 206. Then, as a pretreatment for forming the alignment film, the substrate W is heated at, for example, about 250 ° C. to 300 ° C. by the heater 207 of the substrate holder 206 to perform dehydration / degassing treatment of adsorbed water or gas adhering to the surface of the substrate W. Do.
Next, after the heating by the heater 207 is stopped, the cooling means 208 in the substrate holder 206 is operated to suppress the rise in the substrate temperature due to sputtering, and the coolant is circulated in the substrate holder 206 to bring the substrate W to a predetermined temperature. For example, it is kept at room temperature.

Next, while introducing argon gas and oxygen gas at a predetermined flow rate, the exhaust control device is operated and adjusted to a predetermined operating pressure, for example, about 10 ⁻¹ Pa. Since oxygen radicals and oxygen negative ions are generated in the plasma region P, oxygen gas may not be directly introduced into the plasma space. Further, by operating the heater 207 and the cooling means 208 as necessary, the substrate W is kept at room temperature.

  Thereafter, sputtering is performed under such film forming conditions while the substrate W is moved at a predetermined speed in the direction of arrow A in FIG. 7 by a transfer means (not shown). Then, although the sputter particles serving as the alignment film forming material are emitted radially from the target 205, the metal plate 209 is disposed between the target 205 and the substrate W. Only the light that passes through the opening portion 210 of 209 enters the substrate W.

That is, the sputtered particles are selectively incident only on the film formation surface of the substrate W facing the openings of the metal mesh 211 and the metal cylindrical body 212 in the opening 210. Further, the sputtered particles that have passed through the opening 210 in this way and further passed through the openings of the metal mesh 211 and the metal cylindrical body 212 are at a predetermined angle with respect to the film formation surface of the substrate W, that is, Incident light enters at θ ₂ . As a result, the obtained inorganic alignment film becomes a desired alignment film having a columnar structure inclined at an angle corresponding to the incident angle θ ₂ .

<Formation process of organic alignment layer>
When the inorganic alignment layer is formed on the substrate W as described above, the surface of the inorganic alignment layer is surface-treated with a silane coupling agent or alcohol. As the material for the surface treatment, for example, the above-described silane coupling agent can be used.

  When performing the surface treatment with the silane coupling agent, two methods of a gas phase method and a liquid phase method are possible. In the vapor phase method, for example, a substrate W on which an inorganic alignment layer is formed is placed in a CVD apparatus, and a silane coupling agent is introduced as a vapor so that the inorganic alignment layer is surface-treated with the vapor of the silane coupling agent. When the surface treatment is performed by the liquid phase method, the inorganic alignment layer can be surface treated by dissolving the silane coupling agent in an appropriate solvent. As a specific method for the surface treatment, a contact treatment by a coating method such as a spin coating method, a contact treatment by a spray method, or a dipping method can be employed. In particular, when the surface of the inorganic alignment layer is surface-treated by immersing the substrate W in a solution of a silane coupling agent, ultrasonic waves are applied to the substrate W or the solution in this state, or the processing chamber is depressurized. preferable. By performing ultrasonic treatment and pressure reduction treatment in this way, the silane coupling agent solution enters better into the gap in the surface layer portion of the inorganic alignment layer and reacts with silanol groups (Si—OH) in this gap. It becomes easy.

As described above, the organic alignment layer that is a monomolecular film of an organic material composed of an organic functional group is formed on the surface of the inorganic alignment layer that has been surface-treated in this manner. This organic alignment layer can align liquid crystal molecules satisfactorily by the organic functional group. Further, by covering the surface of the inorganic alignment layer, moisture proofness is improved by water repellency, and light resistance can also be improved. In addition, since the organic material is embedded in the micropores (pores) on the surface of the inorganic alignment layer, the surface can be made dense, so that the space between the inorganic alignment layer and the sealing material 19 (see FIG. 1) It is also possible to improve the air tightness of the sealing portion at the interface between the inorganic alignment layer and the sealing material 19.
Thus, the alignment film is completed.

  As described above, in the present embodiment, the inorganic alignment layers 16A and 22A are formed by the sputtering method, and the surfaces of the inorganic alignment layers 16A and 22A are surface-treated with a silane coupling agent or the like. The organic alignment layers 16B and 22B made of a monomolecular film of an organic material were formed. In this method, since most of the alignment film is formed of an inorganic material, even when it is mounted on a device equipped with a high-output light source such as a liquid crystal projector, damage due to light energy is small and reliable. It will be expensive. In addition, since the orientation of the liquid crystal can be controlled by the organic orientation layers 16B and 22B, and the pretilt angle of the liquid crystal can be controlled by the crystal growth direction of the columnar structure of the inorganic orientation layers 16A and 22A, the orientation characteristics are excellent. . Furthermore, since the moisture-proof property can be improved by covering the surfaces of the inorganic alignment layers 16A and 22A with the organic alignment layers 16B and 22B, the reliability is further improved.

  In addition, in the inorganic alignment layer manufacturing apparatus 201, an opening 210 for selectively allowing the sputtered particles (alignment film material) emitted from the target 205 to pass therethrough is provided. The incident angle of the sputtered particles emitted from the target 205 to the substrate W can be regulated, and thus a columnar structure with a desired shape, that is, a columnar structure with a desired angle is formed, and an inorganic alignment layer with good orientation is formed. be able to. In addition, since the inorganic alignment layer can be formed at a desired angle and with good alignment, the liquid crystal device including the inorganic alignment layer can control the pretilt angle of the liquid crystal molecules better by the inorganic alignment layer. Will be able to.

In addition, since a grounded metal plate 209 for blocking plasma is disposed between the target 205 and the substrate W, electrons and ionic substances can be trapped by the metal plate 209, and thus Exposure of the substrate W to the plasma generated on the target 205 side can be suppressed. Therefore, it is possible to prevent the inconvenience that an inorganic alignment layer having a desired shape cannot be obtained, and to form the inorganic alignment layer better.
Further, since a sputtering method using an RF sputtering device (sputtering device 203) is employed, film formation can be performed at a lower degree of vacuum than, for example, a vapor deposition method or an ion beam sputtering method, and thus a vacuum device such as a vacuum pump. The burden on the (exhaust control device) can be reduced.
Furthermore, since the film is formed at a lower degree of vacuum than the vapor deposition method, the mean free path of the film formation material (alignment film material) is shortened, and therefore, a composition comprising a vacuum chamber or the like is compared with the case where the vapor deposition method is employed. A membrane chamber can be reduced in size and the burden regarding an apparatus can be reduced.

  Further, the energy of the sputtered particles (alignment film material) emitted from the target by the sputtering method is, for example, 10 eV, and the energy of the cluster-like particles generated from the vapor deposition source by the vapor deposition method is, for example, 0.1 eV. Therefore, the sputtered particles have higher adhesion than the clustered particles obtained by the vapor deposition method. Therefore, in the case of cluster-like particles, for example, particles adhering to the inner wall surface of the film forming chamber 202 or the metal plate 209 fall off due to, for example, vibration, and generate dust, which adheres as foreign matter on the substrate W. However, in the case of sputtered particles, once they adhere to the inner wall surface, etc., they do not easily fall off due to their high adhesion, so the inconvenience that they adhere as foreign matter on the substrate W is avoided. Is done.

  In addition, since the metal mesh 211 is provided in the opening 210 of the metal plate 209, the metal mesh 211 is also grounded through the metal plate 209. Therefore, the metal mesh 211 can prevent plasma from leaking to the substrate W side through the opening 210. In particular, since the metal mesh 211 can be formed with a sufficiently small opening diameter, the effect of preventing plasma leakage can be sufficiently exhibited by setting the desired opening diameter.

In addition, since the metal cylindrical body 212 is provided in the opening 210 of the metal plate 209, the metal cylindrical body 212 also prevents plasma from leaking to the substrate W side through the opening 210. Can do. In addition, since the plurality of metal cylindrical bodies 212 are arranged so as to be inclined so that the central axis thereof substantially coincides with the θ ₂ , the sputtered particles emitted from the target 205 are emitted from the metal cylindrical body 212. By passing through, the incident angle with respect to the substrate W becomes more regulated, and thus the obtained inorganic alignment layer has better alignment. Further, since the metal cylindrical body 212 is arranged so that the opening thereof has a close-packed structure, the space ratio formed by the opening of the metal cylindrical body 212 is high, and thus the pressure loss is reduced. Therefore, the incident angle of the sputtered particles with respect to the substrate W can be well regulated without deteriorating the film formability.

  The target 205 extends in a direction substantially perpendicular to the direction of movement of the substrate W by the transfer means (not shown) (in the direction of arrow A in FIG. 5) and is elongated in a line shape, and the opening 210 is formed. Since the substrate 205 is elongated in the same direction corresponding to the target 205, the substrate W is transferred, the alignment film material is discharged from the line-shaped target, and the film is continuously formed by sputtering. An inorganic alignment layer can be formed in a planar shape on W with a width corresponding to the length of the target, and thus productivity can be improved.

  In addition, since the cooling means 208 for cooling the substrate W is provided in the substrate holder 206, the substrate W is cooled by the cooling means 208 during film formation, and the substrate W is held at a predetermined temperature, for example, room temperature. The diffusion (migration) of the molecules of the alignment film material adhering to the substrate W by sputtering on the substrate W can be suppressed, and the growth in the uniaxial direction of the alignment film material can be promoted. Therefore, the orientation of the inorganic alignment layer can be made better.

  In addition, the structure of the manufacturing apparatus 201 is not limited to the said embodiment, A various change is possible unless it deviates from the summary of this invention. For example, although the RF sputtering apparatus is used as the sputtering apparatus 203 in the above embodiment, other sputtering apparatuses such as a DC sputtering apparatus can be used. In addition, for the form of the target 205, it is possible to use a parallel plate target, a counter target, or the like. Moreover, although both the metal mesh 211 and the cylindrical body group 213 consisting of the metallic cylindrical body 212 are provided in the opening 210 of the metal plate 209, only one of them may be provided. If the width of the opening 210 is sufficiently narrow, these may not be provided.

[Electronics]
Next, an embodiment of a projector that is an example of the electronic apparatus of the invention will be described with reference to FIG. FIG. 9 is a schematic configuration diagram showing a main part of the projector. This projector includes the liquid crystal device according to the above-described embodiment as light modulation means.

  9, 810 is a light source, 813 and 814 are dichroic mirrors, 815, 816 and 817 are reflection mirrors, 818 is an incident lens, 819 is a relay lens, 820 is an exit lens, and 822, 823 and 824 are liquid crystal devices of the present invention. 825 is a cross dichroic prism, and 826 is a projection lens. The light source 810 includes a lamp 811 such as a metal halide and a reflector 812 that reflects the light of the lamp.

  The dichroic mirror 813 transmits red light contained in white light from the light source 810 and reflects blue light and green light. The transmitted red light is reflected by the reflection mirror 817 and is incident on the light modulation means 822 for red light. The green light reflected by the dichroic mirror 813 is reflected by the dichroic mirror 814 and is incident on the light modulating means 823 for green light. Further, the blue light reflected by the dichroic mirror 813 passes through the dichroic mirror 814. For blue light, in order to prevent light loss due to a long optical path, a light guide means 821 comprising a relay lens system including an incident lens 818, a relay lens 819, and an exit lens 820 is provided. Blue light is incident on the light modulating means 824 for blue light through the light guiding means 821.

  The three color lights modulated by the respective light modulation means 822, 823, and 824 are incident on the cross dichroic prism 825. The cross dichroic prism 825 is formed by bonding four right-angle prisms. A dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in an X shape at the interface. Yes. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected onto the screen 827 by the projection lens 826 which is a projection optical system, and the image is enlarged and displayed.

  The projector described above includes the liquid crystal device as light modulation means. Since the liquid crystal device has high reliability as described above, the projector (electronic device) itself has high reliability.

  It should be noted that the technical scope of the present invention is not limited to the above-described embodiment, and includes those in which various modifications are made to the above-described embodiment without departing from the gist of the present invention. For example, in the above embodiment, a liquid crystal device including a TFT as a switching element has been described as an example. However, the present invention is applied to a liquid crystal device including a two-terminal element such as a thin film diode as a switching element. It is also possible. In the above embodiment, the transmissive liquid crystal device has been described as an example. However, the present invention can also be applied to a reflective liquid crystal device. In the above embodiment, the liquid crystal device functioning in the VA (Vertical Alignment) mode has been described as an example. However, the present invention may be applied to a liquid crystal device functioning in the TN (Twisted Nematic) mode. Further, in the embodiment, the description has been given by taking a three-plate projection display device (projector) as an example, but the present invention can also be applied to a single-plate projection display device or a direct-view display device.

  The liquid crystal device of the present invention can also be applied to electronic devices other than projectors. A specific example is a mobile phone. This mobile phone includes the above-described liquid crystal device in a display unit. Other electronic devices include, for example, IC cards, video cameras, personal computers, head-mounted displays, fax machines with display functions, digital camera finders, portable TVs, DSP devices, PDAs, electronic notebooks, and electronic bulletin boards. And advertising announcement displays.

It is the top view and sectional view of a liquid crystal device concerning one embodiment of the present invention. 2 is an equivalent circuit diagram of the liquid crystal device. FIG. It is a top view which shows the several pixel group which the TFT array substrate of the liquid crystal device adjoins. FIG. 4 is a cross-sectional view taken along line A-A ′ of FIG. 3. It is sectional drawing which shows schematic structure of an alignment film. It is a figure explaining the surface treatment of the inorganic orientation layer by a silane coupling agent. It is a schematic block diagram which shows one Embodiment of the manufacturing apparatus of alignment film. It is a perspective view which shows schematic structure of the metal cylinders with which the manufacturing apparatus is equipped. It is a schematic block diagram which shows the projector which is an example of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... TFT array substrate, 16 ... Orientation film, 16a ... Columnar structure, 16A ... Inorganic orientation layer, 16B ... Organic orientation layer, 20 ... Opposite substrate, 22 ... Orientation film, 22a ... Columnar structure, 22A ... Inorganic orientation layer , 22B ... organic alignment layer, 100 ... liquid crystal device, 203 ... sputtering device, 205 ... target, 209 ... metal plate, 210 ... opening, W ... substrate

Claims (7)

A method of manufacturing a liquid crystal device, wherein a liquid crystal is sandwiched between a pair of opposing substrates, and an alignment film is formed on the inner surface side of at least one of the pair of substrates,
The step of forming the alignment film includes
Using a sputtering apparatus, an alignment film material made of an inorganic material was obliquely discharged from the target onto the substrate to be processed, and crystals were grown on the substrate obliquely with respect to the normal direction of the substrate. Forming an inorganic alignment layer having a plurality of columnar structures;
A step of surface-treating the surface of the inorganic alignment layer with a silane coupling agent or alcohol, and forming an organic alignment layer comprising a monomolecular film of an organic material chemically bonded to the inorganic alignment layer on the surface of the inorganic alignment layer; A method for manufacturing a liquid crystal device, comprising:   The liquid crystal according to claim 1, wherein the organic alignment layer has an alkyl group as an organic functional group, and a major axis direction of the alkyl group is substantially parallel to a crystal growth direction of the columnar structure. Device manufacturing method.   The organic alignment layer has an alkyl group as an organic functional group, and a major axis direction of the alkyl group is substantially perpendicular to a crystal growth direction of the columnar structure in a plane parallel to the substrate. A method for manufacturing a liquid crystal device according to claim 1.   When forming the inorganic alignment layer, a grounded metal plate is disposed between the target and the substrate so that the substrate is not exposed to the plasma generated on the target side. And an opening for selectively allowing the alignment film material emitted from the target to pass through is provided at an oblique position at a predetermined angle with respect to the target of the metal plate. The method for manufacturing a liquid crystal device according to claim 1. A transfer means for transferring the substrate is provided on the side of the metal plate opposite to the target,
The target extends in a direction substantially perpendicular to the direction of movement of the substrate by the transfer means and is formed in an elongated shape in a line shape, and the opening is formed in an elongated shape corresponding to the target. A method for manufacturing a liquid crystal device according to claim 4. A liquid crystal device comprising a liquid crystal sandwiched between a pair of opposing substrates, and an alignment film formed on the inner surface side of at least one of the pair of substrates,
The alignment film includes an inorganic alignment layer made of an inorganic material having a plurality of columnar structures grown in a direction oblique to the normal direction of the substrate, and a single organic material chemically bonded to the surface of the inorganic alignment layer. And an organic alignment layer made of a molecular film. An electronic apparatus comprising the liquid crystal device manufactured by the method for manufacturing a liquid crystal device according to claim 1 or the liquid crystal device according to claim 6.

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