JP2003167255A - Liquid crystal device, manufacturing method for substrate for liquid crystal device and electronic instrument - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal device wherein moisture leakage into the liquid crystal device can be prevented or suppressed even when an inorganic film is used as an alignment layer, to provide a manufacturing method for the substrate for the liquid crystal device and to provide an electronic instrument provided with the liquid crystal device. <P>SOLUTION: A counter substrate 20 and a TFT array substrate 100 are opposed to each other and a liquid crystal layer 150 is interposed between the counter substrate 20 and the TFT array substrate 100. An inorganic alignment layer 36 wherein a part or all of an oxide is nitrided is formed on the surface on the liquid crystal layer 150 side of at least one of the pair of substrates 20 and 100. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal device, a method of manufacturing a substrate for a liquid crystal device, and an electronic device, and particularly to a liquid crystal projector having a high light resistance and a high reliability suitable for a projection type light valve of a liquid crystal projector. The present invention relates to a liquid crystal device, a method for manufacturing a substrate for a liquid crystal device, and an electronic device using the same.

[0002]

2. Description of the Related Art As a liquid crystal device, for example, a liquid crystal is sealed between two transparent substrates, and a thin film transistor (TFT) which constitutes one substrate.
(Hereinafter, abbreviated as ") an array substrate and a counter substrate which is the other substrate and is opposed to the array substrate. In such a liquid crystal device, a plurality of scanning lines and a plurality of data lines intersecting the scanning lines are arranged in a grid pattern on the TFT array substrate, and the scanning lines intersect the data lines. Pixel switching TFTs are provided corresponding to the parts. Further, a pixel electrode is formed in a region surrounded by these scanning lines and data lines, and an alignment film having an organic film such as polyimide formed on the pixel electrode and having a surface subjected to an alignment treatment by a rubbing treatment is formed. The liquid crystal molecules are arranged in a predetermined direction on the substrate by such an alignment film.

However, the alignment film composed of such an organic film such as a polyimide film is deteriorated by light or heat, and as a result, the alignment regulating force of the liquid crystal molecules by the alignment film is lowered and the alignment state of the liquid crystal molecules is reduced. When the liquid crystal device is disturbed and the liquid crystal device is used as a display device, a display defect such as a decrease in contrast ratio may occur. Therefore, in order to solve such a problem, a liquid crystal device has been proposed in which an inorganic film made of an inorganic material such as silicon oxide (SiOx) is used as an alignment film, and liquid crystal molecules are aligned by the surface shape effect of the inorganic film. There is. The alignment film made of this inorganic film is formed by an oblique evaporation method in which an inorganic material is vapor-deposited from one direction at a certain angle with respect to a substrate and columnar structures grown at a predetermined angle with respect to the substrate are grown. The alignment film thus formed is superior in light resistance and heat resistance to that formed of an organic film such as polyimide, and can improve the durability of the liquid crystal device.

[0004]

However, since an inorganic film made of an inorganic material such as silicon oxide (SiOx) has a hygroscopic property, the alignment function is deteriorated due to the absorption of water and the alignment state of liquid crystal molecules is disturbed. Will end up. In addition, water may enter the liquid crystal device, causing corrosion of metal wiring in the liquid crystal device and deterioration of the drive circuit. Such a defect may cause a display defect when the liquid crystal device is used as a display device.

An object of the present invention is to suppress deterioration of the alignment function due to water absorption even when an inorganic film made of an inorganic material is used as the alignment film. Further, the object of the present invention is to
It is to prevent or suppress the intrusion of water into the liquid crystal device, and prevent or suppress the corrosion of metal wiring and the deterioration of the drive circuit in the liquid crystal device.

[0006]

In order to solve the above-mentioned problems, a liquid crystal device of the present invention comprises a liquid crystal layer sandwiched between a pair of substrates facing each other, and at least one liquid crystal layer side of the pair of substrates. An inorganic alignment film mixed with nitrogen is formed on the surface of. In such a liquid crystal device, since an inorganic alignment film is formed on the surface of the substrate on the liquid crystal layer side, it has excellent light resistance and heat resistance as compared with, for example, an organic film, and has sufficient alignment regulating force for liquid crystal molecules. Secured (that is, stable pretilt angle can be given to liquid crystal molecules)
At the same time, since nitrogen is mixed in the inorganic alignment film, the hygroscopicity is lower than that of an inorganic alignment film formed without mixing nitrogen, for example. Therefore, it becomes possible to prevent deterioration of the alignment function due to water absorption. As a result, when the liquid crystal device of the present invention is used as a display device, display defects are extremely unlikely to occur.

More specifically, the liquid crystal device of the present invention is
A liquid crystal layer is sandwiched between a pair of substrates facing each other, and at least one liquid crystal layer side surface of the pair of substrates,
It is characterized in that an inorganic alignment film in which a part or all of the oxide is nitrogenized is formed. In such a liquid crystal device, since an inorganic alignment film is formed on the surface of the substrate on the liquid crystal layer side, it has excellent light resistance and heat resistance as compared with, for example, an organic film, and has sufficient alignment regulating force for liquid crystal molecules. Secured (that is, stable pretilt angle can be given to liquid crystal molecules)
At the same time, since the oxide in the inorganic alignment film is nitrogenated to become an oxynitriding component, it has lower hygroscopicity than, for example, a conventional inorganic alignment film composed of a non-nitrided oxide. Become. Therefore, it is possible to prevent deterioration of the alignment function due to absorption of water, prevent water from entering the liquid crystal device, and thus prevent or suppress corrosion of metal wiring in the liquid crystal device and drive circuit deterioration. As a result, when the liquid crystal device of the present invention is used as a display device, display defects are extremely unlikely to occur. Examples of oxides include inorganic oxides such as silicon oxide and titanium oxide.

Specifically, the inorganic alignment film may contain a silicon oxynitride component. The silicon oxynitride component is a component containing a compound represented by the general formula: Si ₁ O _m N _n (1, m and n are natural numbers), which is an oxide (for example, SiO _x (x is a natural number)). The number of dangling bonds is smaller than that of the inorganic alignment film composed of, and therefore the hygroscopicity is low. In addition, since the inorganic alignment film has a silicon oxynitride component, it is possible to reduce the acidity of the inorganic alignment film as compared with the case where silicon nitride or the like is used as a protective film for the purpose of preventing deterioration of the liquid crystal device substrate due to moisture intrusion. Since silicon nitride has a smaller dielectric constant than silicon nitride, when the liquid crystal device of the present invention is used as a display device, display defects such as burn-in are less likely to occur.

The inorganic alignment film may include a columnar structure inclined by a predetermined angle with respect to the substrate surface. In this case, the liquid crystal molecules are aligned due to the surface shape effect of the columnar structure. An inorganic alignment film containing such a columnar structure is obtained by an oblique vapor deposition method using SiO, and SiO _x (x Is an orthorhombic vapor-deposited film containing
As in the present invention, for example, SiO _x (x is a natural number) is replaced with Si ₁ O 2.
_By setting _m N _n (1, m and n are natural numbers), it becomes possible to suppress the hygroscopicity of the inorganic alignment film while maintaining the alignment of the liquid crystal molecules by the columnar structure.

More specifically, the liquid crystal device of the present invention further comprises a plurality of pixel electrodes arranged in a matrix on one of the pair of substrates and a plurality of pixel electrodes respectively driving the plurality of pixel electrodes. A switching means and a plurality of data lines and a plurality of scanning lines respectively connected to the plurality of switching means are provided, and a counter electrode is provided on the other substrate of the pair of substrates. The inorganic alignment film may be provided on the surface of at least one of the liquid crystal layers. In the liquid crystal device including the switching means for driving the pixel electrodes and the scanning lines, the data lines, etc., particularly, the switching means, the scanning lines, the data lines, etc. are apt to be corroded or deteriorated by water. By adopting the inorganic alignment film containing or the inorganic alignment film containing a nitrogenated oxide (oxynitride), it is possible to prevent or suppress their corrosion or deterioration. As a concrete liquid crystal device, a TFT is used as a switching means.
An active matrix type liquid crystal device using a three-terminal type element represented by a (Thin-Film Transistor) element can be exemplified. A liquid crystal having pixel electrodes and switching elements arranged in a matrix corresponding to intersections of scan lines provided on one substrate of the pair of substrates and data lines provided on the other substrate. In the device, the inorganic alignment film may be provided on the liquid crystal layer side surface of at least one of the pair of substrates. That is,
An active matrix type liquid crystal device using a two-terminal type element represented by a TFD (Thin-Film Diode) element or the like can be applied to the present invention.

In order to solve the above-mentioned problems, a method of manufacturing a substrate for a liquid crystal device according to the present invention comprises an alignment film forming step of forming an inorganic alignment film on the substrate, and an inorganic film formed on the substrate. And a nitriding reaction step of performing a nitriding reaction on the alignment film. According to such a manufacturing method,
Since the inorganic alignment film is nitrided after the inorganic alignment film is formed on the substrate, the oxide in the alignment film can be reliably nitrogenized, that is, an oxynitride can be formed in the alignment film.

The nitriding reaction step may include a radical nitrogen generating step of generating radical nitrogen, and the generated radical nitrogen may be used to nitride the inorganic alignment film. In this case, since the nitriding reaction can be performed at a relatively low temperature, the nitriding can be performed without impairing the alignment force of the alignment film.

Specifically, the inorganic alignment film may contain silicon oxide, and a nitriding reaction may be performed on the silicon oxide. In this case, silicon oxynitride having lower hygroscopicity than silicon oxide is generated. In addition,
The alignment film forming step is performed by an oblique vapor deposition method in which an inorganic material such as silicon oxide is vapor-deposited from one direction at a certain angle with respect to the substrate, and columnar structures arranged at a predetermined angle with respect to the substrate are grown. You can

In the nitriding reaction step, an excited nitrogen-containing gas producing step of producing an excited nitrogen-containing gas by a plasma source located separately from the substrate surface, and the excited nitrogen-containing gas are formed into the alignment film. It is possible to include a step of supplying an excited nitrogen-containing gas to the substrate surface and a step of subjecting the orientation film to a nitriding reaction based on the supplied excited nitrogen-containing gas. That is, by performing the nitriding reaction step with the plasma source and the substrate separated from each other by the remote plasma processing apparatus provided in another processing chamber, the nitriding reaction can be performed at a lower temperature and ion damage to the substrate can be achieved. Can be reduced.

On the other hand, as a different method of manufacturing a substrate for a liquid crystal device, it is possible to include a vapor deposition step of forming an inorganic alignment film on the substrate by vapor deposition, and perform the vapor deposition step in a nitrogen atmosphere. In this case, the alignment film can be nitrided at the same time when the alignment film is formed. The vapor deposition step in this case can also be performed by the above-described oblique vapor deposition. Specifically, by forming an alignment film of silicon oxide on the substrate by vapor deposition in a nitrogen atmosphere, a predetermined surface with respect to the substrate surface can be obtained. It becomes possible to form a silicon oxynitride film including a columnar structure inclined at an angle. In the vapor deposition process, by performing ion assist for ionizing the nitrogen component, the nitriding reaction with respect to the vapor deposition component can be promoted.

Next, the electronic equipment of the present invention is characterized by including the liquid crystal device having any one of the above configurations. Since such an electronic device includes a liquid crystal device including an inorganic alignment film in which a part or all of an oxide is nitrided, liquid crystal molecules are highly aligned with a predetermined pretilt angle, and further, moisture in the liquid crystal device is increased. Is prevented or suppressed, and it is difficult for defective display to occur. As such an electronic device, for example, a projection display device can be exemplified, and for example, a light source, a liquid crystal device that modulates light emitted from the light source, and light that is modulated by the liquid crystal device is enlarged and projected on a projection surface. A device having a magnifying projection optical system can be used. According to the projection type display device having such a configuration, it is possible to realize a display device having a high display quality by using the liquid crystal device having the inorganic alignment film having excellent light resistance and low hygroscopicity, which has the above configuration. Become.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION [One Embodiment of Liquid Crystal Device] The structure of a liquid crystal device of the present invention will be described with reference to the drawings. FIG. 1 is an equivalent circuit of various elements, wirings, etc. in a plurality of pixels formed in a matrix which form an image display area of the liquid crystal device 300. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. are formed. Figure 3
FIG. 3 is a sectional view taken along the line AA ′ of FIG. Note that, in FIG. 3, the scales of the layers and members are different in order to make the layers and members recognizable in the drawing.

As shown in FIG. 1, in the liquid crystal device 300 of the present embodiment, a plurality of pixels formed in a matrix form an image display area are provided with a pixel electrode 9a and a pixel electrode 9a for controlling the pixel electrode 9a. Pixel switching TFT3
A plurality of 0s are formed in a matrix, and the data line 6a for supplying the image signal is electrically connected to the source region of the TFT 30. The image signals S1, S2, ..., Sn to be written to the data line 6a may be line-sequentially supplied in this order, or may be supplied to each of a plurality of adjacent data lines 6a in groups. good. Further, the scanning line 30a is electrically connected to the gate of the TFT 30, so that the scanning signals G1, G2, ..., Gm are applied to the scanning line 30a in a pulse-wise manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is
The image signal S supplied from the data line 6a is electrically connected to the drain region of the pixel switching TFT 30 and is closed by closing the switch of the pixel switching TFT 30 which is a switching element for a certain period.
1, S2, ..., Sn are written at a predetermined timing.

The image signals S1, S2, ..., Sn having a predetermined level written in the liquid crystal through the pixel electrode 9a are supplied to the counter electrode 21 (see FIG. 3) formed on the counter substrate 20 (see FIG. 3). Held for a period of time. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 3). For example, the pixel electrode 9a
Is held for three hours longer than the time when the source voltage is applied by the storage capacitor 70. Storage capacity 7
As a method of forming 0, a capacitance line 30b which is a wiring for forming a capacitance with the semiconductor layer is provided.

Next, with reference to FIG. 2, the planar structure in the pixel portion (image display region) of the TFT array substrate of the liquid crystal device 300 of this embodiment will be described. On the TFT array substrate of the liquid crystal device 300, a plurality of transparent pixel electrodes 9a (outlined by a dotted line portion 9a ') are provided in a matrix, and the pixel electrodes 9a are arranged along the vertical and horizontal boundaries, respectively. Data line 6a, scanning line 30a, and capacitance line 30b
Is provided. The data line 6a has a semiconductor layer 11a made of a polysilicon film or the like via the contact hole 50.
Of the semiconductor layer 11a electrically connected to the source region of the semiconductor layer 11a through the contact hole 80.
Of which is electrically connected to the drain region. In addition,
The semiconductor layer is not limited to the polysilicon film, and single crystal silicon or the like can be used by, for example, a bonding method. Further, the pixel electrode pitch is about 20 μm in the XGA having a diagonal of 1 inch (768 × 1024), and is about 15 μm in the XGA having a diagonal of 0.7 inch. Further, the scanning line 30a is arranged so as to face the channel region of the semiconductor layer 11a, and the scanning line 30a functions as a gate electrode.

Next, looking at the sectional structure, as shown in FIG. 3, the liquid crystal device 300 of the present embodiment has a pair of transparent substrates, one of which is the TFT array substrate 1
00 and a counter substrate 20 which is the other substrate facing the counter substrate 00. The TFT array substrate 100 is made of, for example, a quartz substrate or hard glass, and includes a counter substrate 20.
Is made of, for example, a glass substrate or a quartz substrate.
A pixel electrode 9a made of a transparent conductive film such as an ITO film is provided on the TFT array substrate 100, and a pixel for switching control of each pixel electrode 9a is provided at a position adjacent to each pixel electrode 9a on the TFT array substrate 100. A switching TFT 30 is provided. Pixel switching T
The FT 30 has an LDD (Lightly Doped Drain) structure and includes a scanning line 30a, a channel region 1a 'of the semiconductor layer 11a in which a channel is formed by an electric field from the scanning line 30a, the scanning line 30a and the semiconductor layer 11a. An insulating thin film 12 for insulating the data, a data line 6a, a low concentration source region 1b and a low concentration drain region 1c of the semiconductor layer 11a, a high concentration source region 1d and a high concentration drain region 1e of the semiconductor layer 11a.

The insulating thin film 12 is formed on the scanning line 30a.
On the TFT array substrate 100 including the upper part, the second interlayer insulating film 14 in which the contact hole 50 communicating with the high concentration source region 1d and the contact hole 80 communicating with the high concentration drain region 1e are respectively formed is formed. That is,
The data line 6a is electrically connected to the high concentration source region 1d via a contact hole 50 penetrating the second interlayer insulating film 14. Further, on the data line 6a and the second interlayer insulating film 14, the third interlayer insulating film 17 in which the contact hole 80 leading to the high concentration drain region 1e is formed.
Are formed. That is, the high concentration drain region 1e
Are electrically connected to the pixel electrode 9a through a contact hole 80 penetrating the second interlayer insulating film 14 and the third interlayer insulating film 17. The third interlayer insulating film 17 and the pixel electrode 9a serve as a base layer of the inorganic alignment film 36.

Further, the insulating thin film 12 serving as a gate insulating film is extended from a position facing the gate electrode formed of a part of the scanning line 30a to be used as a dielectric film, and the semiconductor layer 11a is extended to form the first storage. A storage capacitor 70 is formed by using the capacitance electrode 1f and a part of the capacitance line 30b facing the capacitance electrode 1f as the second storage capacitance electrode.

Further, as shown in FIG. 3, a first light shielding film 111 is provided on the surface of the TFT array substrate 100 at a position corresponding to each pixel switching TFT 30. First
The light shielding film 111 includes a metal layer M1 provided on the TFT array substrate 100 and a barrier layer B1 provided on the metal layer M1. The first light-shielding film 11
It is also possible to form 1 in a single layer.

A first interlayer insulating film (insulator layer) 112 is provided between the first light shielding film 111 and the plurality of pixel switching TFTs 30. First interlayer insulating film 11
2 is provided to electrically insulate the semiconductor layer 11a forming the pixel switching TFT 30 from the first light shielding film 111. Further, the first interlayer insulating film 11
No. 2 is formed on the entire surface of the TFT array substrate 100, and its surface is polished and flattened in order to eliminate the step difference of the first light shielding film 111 pattern.

On the other hand, on the counter substrate 20, a second region is formed in a region opposite to the formation region of the data line 6a, the scanning line 30a, and the pixel switching TFT 30 on the TFT array substrate 100, that is, a region other than the opening region of each pixel portion. A light shielding film 23 is provided. Further, a counter electrode (common electrode) 21 is provided over the entire surface of the counter substrate 20 including the second light shielding film 23. The counter electrode 21 is also formed of a transparent conductive film such as an ITO film, like the pixel electrode 9a of the TFT array substrate 100. Due to the presence of the second light-shielding film 23, the incident light from the counter substrate 20 side causes the channel region 1a ′ of the semiconductor layer 11a of the pixel switching TFT 30.
Or low concentration source region 1b, low concentration drain region 1c
Never break into. Further, in the display device having the color filter, the second light-shielding film 23 can exhibit the functions of improving the contrast ratio, preventing the color mixture of the color materials, or the so-called black matrix function.

Next, the pixel switching TFTs 30 of the TFT array substrate 100, the data lines 6a and the scanning lines 30a.
An inorganic alignment film 36 made of an inorganic oblique vapor deposition film is formed on the third interlayer insulating film 17 and the pixel electrode 9a corresponding to the formation region of the. The inorganic alignment film 36 is the first light-shielding film 11
An inorganic material such as silicon oxide is formed on the TFT array substrate 100 on which the first, first interlayer insulating film 112, TFT 30, second interlayer insulating film 14, third interlayer insulating film 17, pixel electrode 9a and the like are formed by using a predetermined vapor deposition device. Is formed by the oblique evaporation method of growing columnar structures arranged at a predetermined angle with respect to the substrate 100. In addition, the inorganic alignment film 36 in the case of the present embodiment contains silicon oxynitride in which silicon oxide is nitrided.

FIG. 4 is a diagram schematically showing the cross-sectional structure of the portion where the inorganic alignment film 36 is formed and the portion in the vicinity thereof, taken along the oblique vapor deposition direction. The inorganic alignment film 36 is formed on the substrate 100.
Has a columnar structure (hereinafter also referred to as a column) 36a made of an inorganic material, which is oriented at a predetermined angle θ _{3 with} respect to the surface of the column 36a.
There is a gap 37 between a and 36a.

Returning to FIG. 3, the inorganic alignment film 1 made of the same material is also formed on the counter electrode 21 of the counter substrate 20 at a position facing the inorganic alignment film 36 on the TFT array substrate 100 side.
42 are provided. Similar to the inorganic alignment film 36, the inorganic alignment film 142 is formed on the counter substrate 20 on which the second light-shielding film 23, the counter electrode 21 and the like are formed by vapor-depositing an inorganic material such as silicon oxide on the substrate 20. It is formed by oblique vapor deposition in which columns arranged at a predetermined angle are grown. The inorganic alignment film 142 contains silicon oxynitride obtained by nitriding silicon oxide, like the inorganic alignment film 36.

TFT array substrate 100 and counter substrate 20
Are arranged so that the pixel electrode 9a and the counter electrode 21 face each other. Then, liquid crystal is sealed in a space surrounded by the substrates 100 and 20 and a sealing material provided on the side of the substrate (not shown), and a liquid crystal layer 150 is formed. The liquid crystal layer 150 is in a predetermined alignment state by the action of the inorganic alignment films 36 and 142 when the electric field from the pixel electrode 9a is not applied (when no voltage is applied). Note that "when no voltage is applied" and "when voltage is applied" refer to "when the voltage applied to the liquid crystal layer is less than the threshold voltage of the liquid crystal" and "when the voltage applied to the liquid crystal layer is the threshold voltage of the liquid crystal", respectively. When it is above the voltage, it means.

As shown in FIG. 4, the inorganic alignment film 36 is formed.
The liquid crystal molecules in the vicinity of the part where is formed have the major axis of the molecule aligned in a plane including the direction along the oblique deposition direction when no electric field is applied (when no voltage is applied), and in TN mode. The pretilt angle θ _p is set to fall within the range of approximately 5 degrees to 30 degrees. The liquid crystal molecules are aligned in this way
The inorganic alignment films 36 and 142 have a structure having the gap 37 between the tilted columns as described above, and this is due to the surface shape effect of the inorganic alignment films 36 and 142 on the liquid crystal layer 150 side.

In addition, as described above, the inorganic alignment films 36 and 14
2 contains silicon oxynitride obtained by nitriding silicon oxide, and specifically, in the silicon oxynitride, nitrogen is 30 to 30%.
The content is about 60 atom%, and it is possible that all of silicon oxide is nitrided. As described above, since the inorganic alignment film 36 has a structure in which a part or all of silicon oxide is nitrided, the hygroscopicity is reduced as compared with the case where it is composed of only silicon oxide, and the liquid crystal device 300 has It becomes difficult for moisture to enter the inside, that is, the inside of the substrates 100 and 20, and, for example, a pixel switching TFT.
It is configured such that problems such as corrosion and deterioration due to moisture in the 30, data lines 6a, the scanning lines 30a and the like are less likely to occur. Note that the nitrogen content in silicon oxynitride is preferably 50 to 60 atom%. The higher the nitrogen content, the better the moisture resistance. The inorganic alignment film containing silicon oxynitride is used at least in the TFT array substrate 100.
If it is formed on the side (that is, the inorganic alignment film 36 contains silicon oxynitride), it can be improved compared to the conventional one. Further, the alignment film of the counter substrate 20 may be an organic film.

[Overall Configuration of Liquid Crystal Device] Next, the overall configuration of the liquid crystal device 300 will be described with reference to FIGS. 10 is a plan view of the TFT array substrate 100 together with the components formed on the TFT array substrate 100 from the side of the counter substrate 20, and FIG. 11 shows the counter substrate 20 including H- of FIG. It is a H'sectional view.

In FIG. 10, the TFT array substrate 100 is shown.
The sealing material 51 is provided along the edge of the above, and the third light shielding film 53 as a frame made of the same or different material as the second light shielding film 23 is provided in parallel with the inside thereof. Has been. The data line driving circuit 101 and the external circuit connecting terminal 10 are provided in the area outside the sealing material 51.
2 is provided along one side of the TFT array substrate 100, and the scanning line driving circuit 104 is provided along two sides adjacent to this one side.

Further, a plurality of wirings 105 for connecting the scanning line driving circuits 104 provided on both sides of the image display area are provided on the remaining one side of the TFT array substrate 100. In addition, at least one position of the corner portion of the counter substrate 20 is provided with a conductive material 106 for electrically connecting the TFT array substrate 100 and the counter substrate 20. Then, as shown in FIG. 11, the counter substrate 20 having substantially the same contour as the sealing material 51 shown in FIG.
Are fixed to the TFT array substrate 100 by the sealing material 51.

[Manufacturing Process of Liquid Crystal Device] Next, a manufacturing process of the liquid crystal device having the above structure will be described with reference to FIGS. 5 to 9. 5 and 6 show each layer on the TFT array substrate 100 side in each step, and FIGS. 7A and 7B show the counter substrate 2 in each step.
FIG. 4 is a process diagram showing each layer on the 0 side corresponding to the AA ′ cross section of FIG. 2 as in FIG. 3. 8 and 9 show a method of manufacturing a substrate for a liquid crystal device, a vapor deposition device in the case of performing oblique vapor deposition to form an alignment film on the substrate, and a nitriding reaction device for nitriding the alignment film. It is a schematic diagram.

As shown in FIG. 5, a metal layer M is formed on the TFT array substrate 100 made of a quartz substrate, hard glass or the like.
1 and the barrier layer B1, the first light-shielding film 111, the first interlayer insulating film 112, the semiconductor layer 11a, the channel region 1
a ′, low-concentration source region 1b, low-concentration drain region 1
c, high concentration source region 1d, high concentration drain region 1e,
The first storage capacitor electrode 1f, the insulating thin film 12, the scanning line 30a,
Capacitance line 30b, second interlayer insulating film 14, data line 6a, third interlayer insulating film 17, contact hole 80, pixel electrode 9
Prepare a prepared by a method similar to the conventional method (for example, photolithography method). An inorganic material (vapor deposition substance) is vapor-deposited from a predetermined direction on the surface of the TFT array substrate 100 on which the pixel electrodes 9a and the like are formed in this way by using the vapor deposition device 1 shown in FIG. The reaction device 49 performs a nitriding reaction on the substrate 100 after vapor deposition. Then, as shown in FIG. 6, a TFT having a columnar structure (column) oriented in a predetermined direction and having an inorganic orientation film 36 (see FIG. 4) containing a silicon oxynitride component, in which a pixel electrode 9a and the like are formed is formed. It is formed on the surface layer of the array substrate 100.

On the other hand, as the counter substrate 20, a glass substrate or the like is first prepared, and as shown in FIG. 7A, after the second light-shielding film 23 is sputtered with, for example, metallic chromium, a photolithography process and an etching process are performed. To be formed. The light-shielding film is made of Cr, Ni (nickel), A
In addition to a metal material such as l, it may be formed from a material such as resin black in which carbon or Ti is dispersed in a photoresist. Then, the counter substrate 20 on which the second light shielding film 23 is formed
The counter electrode 21 is formed by depositing a transparent conductive film such as ITO to a thickness of about 50 to 200 nm on the entire surface of the substrate by sputtering or the like. Next, with respect to the counter substrate 20 on which the second light shielding film 23, the counter electrode 21 and the like are formed, as shown in FIG.
An inorganic material (vapor deposition substance) is vapor-deposited from a predetermined direction by using the vapor deposition apparatus 1 shown in FIG. 1, and the nitriding reaction apparatus 49 shown in FIG. As a result, as shown in FIG. 7B, an inorganic alignment film 142 having a columnar structure (column) oriented in a predetermined direction and containing a silicon oxynitride component is formed on the surface layer of the counter electrode 21.

Finally, the T on which each layer was formed as described above.
The FT array substrate 100 (see FIG. 6) and the counter substrate 20 (see FIG. 7) are arranged so that the oblique vapor deposition directions deviate from each other by approximately 90 ° (the column array in which the TFT array substrate 100 and the counter substrate 20 are arranged at a predetermined angle). Structures are arranged so that the arrangement direction thereof is shifted by about 90 °), and the cells are bonded by a sealing material 51 (see FIG. 10) so that the cell thickness becomes about 3 μm, and an empty panel is manufactured. A positive type liquid crystal such as fluorine is used as the liquid crystal, and the liquid crystal is sealed in the panel to obtain the liquid crystal device of the present embodiment.

Here, a process of forming an inorganic alignment film on the substrates 100 and 20, that is, a method of manufacturing a substrate for a liquid crystal device will be described with reference to FIGS. 8 and 9. FIG. 8 is an explanatory diagram schematically showing the outer appearance of an example of a vapor deposition apparatus used for forming a vapor deposition film by the above-mentioned oblique vapor deposition method. This vapor deposition device 1
Is a vapor deposition source 2 for generating vapor of a vapor deposition substance, and a vapor circulation unit 3 having an opening 3a through which vapor of the vapor deposition substance can flow.
And a vacuum pump 10 for evacuating the vapor deposition chamber 8 and a vapor deposition chamber 8 including the substrates 100 and 20 inclined with respect to the vapor deposition source 2 at a predetermined angle. .

The vapor deposition method in this case is as follows.
First, when the vacuum pump 10 is operated, the vapor deposition chamber 8 is evacuated, and when the vapor deposition source 2 is further heated by a heating device (not shown), vapor of the vapor deposition substance (here, silicon oxide) is generated from the vapor deposition source 2. The vapor stream of silicon oxide generated from the vapor deposition source 2 passes through the opening 3a and is vapor-deposited on the surfaces of the substrates 100 and 20 at a predetermined angle (vapor deposition angle).

With respect to the substrates 100 and 20 on which the vapor-deposited film of silicon oxide is formed, the nitriding reactor 4 shown in FIG. 9 is used.
The nitriding reaction is carried out using 9. The nitriding reaction device 49 is
A device that includes a nitrogen-containing gas supply unit 40, a plasma generation unit 42, and a nitriding reaction main body unit 44, and mounts the substrates 100 and 20 on a substrate mounting unit 45 provided in the nitriding reaction device 49 to perform a reaction. It is said that. The plasma generator 42 is
For example, a vacuum container having an inductively coupled plasma source and a high-frequency power source are adopted, and the nitriding reaction main body 44 is separated by a predetermined distance. In the present embodiment, a so-called remote plasma processing method is adopted. .

First, from the nitrogen-containing gas supply unit 40 to the supply pipe 4
Nitrogen gas is supplied to the plasma generation unit 42 via 1,
The nitrogen gas supplied by the plasma generation unit 42 is excited to generate radical nitrogen (excited nitrogen gas). And
The generated radical nitrogen is supplied to the nitriding reaction main body 44 via the supply pipe 43, and the nitriding reaction is performed on the vapor deposition film of silicon oxide formed on the substrates 100 and 20. .

On the other hand, in the oblique vapor deposition apparatus 1 shown in FIG. 8, nitrogen gas is supplied into the vapor deposition chamber 8 and silicon oxide is vapor-deposited on the substrates 100 and 20 in a nitrogen atmosphere to align them in the predetermined direction. It is also possible to form the inorganic alignment film 36 having the columnar structure (column) described above and containing the silicon oxynitride component on the substrates 100 and 20. Further, it is preferable to activate the nitrogen gas by performing a predetermined ion assist to enhance the reactivity of nitrogen with respect to the deposited silicon oxide.

By the FT-IR measurement after the reaction, the substrates 100 and 20 that have been subjected to the nitriding reaction by using the nitriding reaction apparatus 49 as described above, or the substrates 100 and 20 that have been obliquely vapor-deposited in a nitrogen atmosphere An absorption peak based on the ON bond was observed, and it was found that silicon oxide was changed to silicon oxynitride.

In the liquid crystal device and the method for manufacturing a substrate for a liquid crystal device according to the above-described embodiment, the present invention is an active matrix type liquid crystal device using a three-terminal type element represented by a TFT element, and a method for manufacturing the substrate for a liquid crystal device. Although the case of application to the method has been described, an active matrix type liquid crystal device using a two-terminal type element represented by a TFD element and a method for manufacturing a substrate for the liquid crystal device, a passive matrix type liquid crystal device and the liquid crystal device It can also be applied to a substrate manufacturing method. Further, the present invention can be applied not only to a transmissive liquid crystal device but also to a reflective liquid crystal device.

[Electronic Equipment] Next, specific examples of electronic equipment provided with the liquid crystal device 300 of the above embodiment will be described.
FIG. 12A is a perspective view showing an example of a mobile phone. In FIG. 12A, reference numeral 500 denotes a mobile phone main body, and 501 denotes a liquid crystal display unit including the liquid crystal device 300. FIG. 12B is a perspective view showing an example of a portable information processing device such as a word processor and a personal computer. In FIG. 12B, 600 is an information processing device, 601 is an input unit such as a keyboard, 603 is an information processing main body, 60
Reference numeral 2 denotes a liquid crystal display unit including the liquid crystal device 300. FIG. 12C is a perspective view showing an example of a wristwatch type electronic device. In FIG. 12C, 700 indicates a watch body, and 701 indicates a liquid crystal display section including the liquid crystal device 300.

FIG. 13 is a schematic configuration diagram showing a main part of a projection type display device using the liquid crystal device 300 as a light modulator. In FIG. 13, reference numeral 810 is a light source, and 813 and 81.
4 is a dichroic mirror, 815, 816 and 817 are reflection mirrors, 818 is an entrance lens, 819 is a relay lens, 820 is an exit lens, 822, 823 and 824 are liquid crystal light modulators, 825 is a cross dichroic prism, and 826 is a projection lens. Indicates.

The light source 810 is a lamp 8 such as a metal halide.
11 and a reflector 812 that reflects the light of the lamp. Dichroic mirror 813 that reflects blue light and green light
Transmits the red light of the light flux from the light source 810 and reflects the blue light and the green light. The transmitted red light is reflected by the reflection mirror 817, and the red light is transmitted to the liquid crystal device 30.
It is incident on the liquid crystal light modulation device 822 for red light provided with 0. On the other hand, of the color light reflected by the dichroic mirror 813, green light is green light-reflecting dichroic mirror 8
The light is reflected by 14 and enters the liquid crystal light modulator for green light 823 including the liquid crystal device 300. The blue light also passes through the second dichroic mirror 814. For blue light, in order to compensate that the optical path length is different from that of green light and red light, the incident lens 818 and the relay lens 81
9. A light guide unit 821 including a relay lens system including an emission lens 820 is provided, and blue light is incident on the blue light liquid crystal light modulator 824 including the liquid crystal device 300 via the light guide unit 821. In addition, the liquid crystal light modulators 822 and 82 for each color
3, 824 are incident side polarization means 822, respectively.
a, 823a, 824a and the output side polarization means 822b,
The liquid crystal light valve includes 823b and 824b and a liquid crystal device arranged between them.

The three color lights modulated by the respective light modulators enter the cross dichroic prism 825. This prism is formed by laminating four right-angled prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. Three color lights are combined by these dielectric multilayer films to form light representing a color image. The combined light is projected on the screen 827 by the projection lens 826 which is a projection optical system, and the image is enlarged and displayed.

Since the electronic equipment shown in FIGS. 12A to 12C and FIG. 13 is equipped with the liquid crystal display device of the above-mentioned embodiment, it is possible to obtain a clearer color display and an excellent display quality. Will be things. The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

[0052]

As described above in detail, according to the liquid crystal device of the present invention, one of the pair of substrates sandwiching the liquid crystal layer has at least one liquid crystal layer side surface thereof with the oxide as described above. Since part or all of the inorganic alignment film is nitrogenized, it is excellent in light resistance and heat resistance, and the alignment control force of liquid crystal molecules is sufficiently secured. Therefore, it is considered to have high humidity resistance. Therefore, it is difficult for moisture to enter the liquid crystal device, and it is possible to prevent or suppress corrosion of metal wiring and deterioration of the drive circuit in the liquid crystal device. Further, when the liquid crystal device of the present invention is used as a display device, it is extremely difficult for display defects to occur.

[Brief description of drawings]

FIG. 1 is a diagram showing an equivalent circuit of a liquid crystal device as an embodiment of the invention.

2 is a plan view showing a plurality of pixel groups adjacent to each other on a TFT array substrate of the liquid crystal device of FIG.

3 is a cross-sectional view taken along the line A-A ′ of FIG.

FIG. 4 is a diagram schematically showing a cross-sectional structure of a portion of the liquid crystal device of FIG. 1 on which an oblique vapor deposition film is formed.

FIG. 5 is a process drawing for explaining the method for manufacturing a liquid crystal device of the present invention.

FIG. 6 is a step diagram for explaining the manufacturing method, following FIG. 5;

FIG. 7 is a process chart for explaining the manufacturing method, following FIG. 6;

FIG. 8 is an explanatory diagram showing an example of a vapor deposition device used when manufacturing a substrate for a liquid crystal device.

FIG. 9 is an explanatory diagram showing an example of a nitriding reaction device used when manufacturing a substrate for a liquid crystal device.

FIG. 10 is a plan view showing the TFT array substrate of the liquid crystal device of the present embodiment together with the constituent elements formed thereon.

11 is a cross-sectional view taken along the line H-H 'of FIG.

FIG. 12 is a diagram showing some examples of electronic devices of the present invention.

FIG. 13 is a diagram showing an example of a projection type display device for an electronic apparatus of the invention.

[Explanation of symbols] 9a Pixel electrode 20 Counter substrate 36,142 Inorganic alignment film 36a columnar structure 49 Nitriding reactor 100 TFT array substrate 150 liquid crystal layer 300 liquid crystal device

Claims (12)

[Claims] 1. A liquid crystal device in which a liquid crystal layer is sandwiched between a pair of substrates facing each other, wherein an inorganic alignment film containing nitrogen is formed on the surface of at least one liquid crystal layer side of the pair of substrates. A liquid crystal device characterized by being formed. 2. A liquid crystal device comprising a liquid crystal layer sandwiched between a pair of substrates facing each other, wherein part or all of the oxide is nitrogen on at least one liquid crystal layer side surface of the pair of substrates. A liquid crystal device, wherein a liquid crystallized inorganic alignment film is formed. 3. The liquid crystal device according to claim 1, wherein the inorganic alignment film contains a silicon oxynitride component. 4. The liquid crystal device according to claim 1, wherein the inorganic alignment film includes a columnar structure inclined by a predetermined angle with respect to the substrate surface. 5. A plurality of pixel electrodes arranged in a matrix on one of the pair of substrates, a plurality of switching means for driving the plurality of pixel electrodes, and a plurality of the switching means. A plurality of data lines and a plurality of scanning lines connected to each other, and a counter electrode on the other substrate of the pair of substrates, the liquid crystal layer side of at least one of the pair of substrates. The liquid crystal device according to any one of claims 1 to 4, wherein the inorganic alignment film is provided on a surface of the liquid crystal display device. 6. A liquid crystal comprising: an alignment film forming step of forming an inorganic alignment film on a substrate; and a nitriding reaction step of performing a nitriding reaction on the inorganic alignment film formed on the substrate. Method for manufacturing device substrate. 7. The substrate for a liquid crystal device according to claim 6, wherein the nitriding reaction step includes a radical nitrogen generation step of generating radical nitrogen, and the radical alignment nitrogen is used to nitride the inorganic alignment film. Manufacturing method. 8. The substrate for a liquid crystal device according to claim 6, wherein the inorganic alignment film contains silicon oxide, and a nitriding reaction is performed on the silicon oxide. Production method. 9. The nitriding reaction step comprises: an excited nitrogen-containing gas producing step of producing an excited nitrogen-containing gas by a plasma source located separately from the substrate surface; and the oriented film forming the excited nitrogen-containing gas. 9. An excited nitrogen-containing gas supplying step for supplying the excited nitrogen-containing gas to the substrate surface, and a nitriding reaction-based step for nitriding the alignment film based on the supplied excited nitrogen-containing gas. Item 1. A method for manufacturing a substrate for a liquid crystal device according to item 1. 10. A method of manufacturing a substrate for a liquid crystal device, comprising a vapor deposition step of forming an inorganic alignment film on a substrate by vapor deposition, and performing the vapor deposition step in a nitrogen-containing atmosphere. 11. The method for manufacturing a substrate for a liquid crystal device according to claim 10, wherein ion assisting for ionizing a nitrogen component is performed in the vapor deposition step. 12. An electronic apparatus comprising the liquid crystal device according to claim 1. Description: