JP2008018305A - Gas purifier - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a gas purifier employing an adsorbent suitable for adsorption removal of organic silicon type impurities from a hydrocarbon type raw gas. <P>SOLUTION: The gas purifier 10 is used to purify a raw gas 1 containing sulfur type impurities 1a, organic silicon type impurities 1b and moisture 1c and has an adsorption column 11 provided with adsorbents 12 and 13 adsorbing impurities 1a and 1b, respectively, and an adsorption column 21 provided with an adsorbent 24 adsorbing moisture 1c. The adsorbent 12 is silicalite, the adsorbent 13 is one of SBA-1, SBA-3, SBA-7 and SBA-15, and the adsorbent 24 is silica gel. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a gas purification apparatus, and in particular, organic silicon such as biogas such as sewage digestion gas and food waste fermentation methane gas, and waste pyrolysis gas generated by pyrolyzing waste such as waste. It is effective when applied to purify gas containing system impurities.

  Biogas such as sewage digestion gas and food waste fermented methane gas, and waste pyrolysis gas generated by pyrolyzing wastes such as garbage, etc., can be used effectively for power generation by driving gas engines and micro gas turbines In this case, the harmful substances such as sulfur impurities (for example, hydrogen sulfide, thiocarbonyl, thiophene, mercaptan) and organic silicon impurities (for example, siloxane) contained in the gas are removed in advance. Therefore, it is necessary to purify the gas. For this reason, conventionally, sulfur-based impurities in raw gases such as the biogas and the waste pyrolysis gas are chemically absorbed and removed with an aqueous sodium hydroxide solution (Takahax method) or physically with iron oxide or the like. The raw gas is purified by adsorption or removal (Dalai powder layer method) or by physically adsorbing and removing organic silicon impurities in the raw gas with activated carbon or the like.

  For example, Patent Document 1 discloses that organosilicon of any one of USY, USM, MCM-41, and MCM-48 disposed in the first treatment tank by feeding the raw gas to the first treatment tank. There is disclosed a gas purifier for purifying a purified gas composed of methane by adsorbing and removing the organosilicon impurities and the sulfur impurities by a system impurity adsorbent and a sulfur impurity adsorbent. In this gas purification apparatus, a moisture adsorbent is provided in the first treatment tank on the downstream side of the impurity adsorbent in the first treatment tank in the gas flow direction, and is included in the raw gas. Moisture was removed by adsorption.

  Patent Document 2 discloses that the digestion gas is fed to the siloxane removal unit, and the organic compound is adsorbed by a siloxane compound adsorbent (organosilicon-based impurity adsorbent) made of activated carbon for gas treatment disposed in the siloxane removal unit. An apparatus for purifying digestion gas that purifies a purified gas composed of methane by adsorbing and removing a siloxane compound that is a silicon-based impurity is disclosed.

JP 2006-16439 A JP 2006-83311 A

  However, in the gas purification apparatus and the digestion gas purification apparatus described above, the organosilicon impurities are adsorbed from the raw gas by the organosilicon impurity adsorbent of any of USY, USM, MCM-41, MCM-48, and activated carbon. In addition to these adsorbents, a gas purifier using an adsorbent that is suitable for adsorbing and removing organosilicon impurities from raw gas (hydrocarbon) has been desired.

  Accordingly, the present invention has been proposed in view of the above-described problems, and provides a gas purification apparatus using an adsorbent that is suitable for adsorption removal of organosilicon impurities from raw gas (hydrocarbon). With the goal.

  A gas purification apparatus according to a first invention that solves the above-described problem is a gas purification apparatus that purifies a raw gas containing sulfur-based impurities, organic silicon-based impurities, and moisture, and includes a first treatment tank, A first gas feeding means for circulating the raw gas from one side of the first treatment tank to the other side; a first reduced pressure exhaust means for evacuating and exhausting the inside of the first treatment tank; A sulfur-based impurity adsorbent that adsorbs the sulfur-based impurities, disposed in the first processing tank so as to partition one side and the other side in the first processing tank, and in the first processing tank Arranged in the first treatment tank so as to partition one side and the other side, an organosilicon impurity adsorbent that adsorbs the organosilicon impurities, a second treatment tank, and the first treatment tank The gas flowing from one side of the second to the other side flows from one side of the second treatment tank to the other side. A second gas feeding means, a second reduced pressure exhaust means for evacuating and exhausting the inside of the second treatment tank, and the one side and the other side in the second treatment tank so as to partition each other. And a moisture adsorbent that adsorbs moisture, the sulfur-based impurity adsorbent is silicalite, and the organosilicon impurity adsorbent is SBA-1, SBA- 3, SBA-7, or SBA-15, wherein the moisture adsorbent is silica gel.

  A gas purification apparatus according to a second invention that solves the above-described problem is a gas purification apparatus that purifies a raw gas containing sulfur-based impurities, organic silicon-based impurities, and moisture, and includes a first treatment tank, The first reduced pressure exhaust means for depressurizing and exhausting the inside of the first treatment tank, and disposed in the first treatment tank so as to partition one side and the other side in the first treatment tank, The sulfur-based impurity adsorbent that adsorbs the sulfur-based impurities and the first processing tank are disposed in the first processing tank so as to separate one side and the other side, and adsorb the organosilicon impurities. An organic silicon-based impurity adsorbent, a second treatment tank, and the raw gas flowing from one side of the first treatment tank to the other side, and from one side of the first treatment tank to the other side. A second gas that circulates the circulated gas from one side of the second treatment tank to the other side. Gas supply means, second reduced pressure exhaust means for depressurizing and exhausting the inside of the second treatment tank, and the second treatment so as to partition one side and the other side in the second treatment tank. It is arranged in a tank and has a moisture adsorbent that adsorbs moisture, the sulfur-based impurity adsorbent is silicalite, and the organosilicon-based impurity adsorbent is SBA-1, SBA-3, SBA-7. , SBA-15, and the moisture adsorbent is silica gel.

  According to the gas purification apparatus of the present invention, sulfur-based impurities, organosilicon impurities and moisture contained in the raw gas are transferred to the sulfur-based impurity adsorbent disposed in the first processing tank and the second processing tank. The sulfur-based impurities and the moisture are not brought into contact with each other because the sulfur-based impurities and the moisture are discharged out of the system through different exhaust paths. Therefore, it is possible to avoid corrosion of the treatment tank, the adsorbent, and an exhaust path through which the sulfur impurities are exhausted by a solution in which the sulfur impurities are dissolved in the moisture. As a result, purification by removing sulfur impurities and moisture from the raw gas can be stably performed at low cost. Further, since the organosilicon adsorbent is any one of SBA-1, SBA-3, SBA-7, and SBA-15, the adsorbent is adsorbed on the adsorbent. It has a reversible adsorption performance for adsorbing organic silicon impurities again after removing the organic silicon impurities, and can adsorb and remove the organic silicon impurities from hydrocarbons containing the organic silicon impurities continuously and stably. .

  Below, the best form for implementing the gas purification apparatus which concerns on this invention is demonstrated concretely based on each embodiment.

[First embodiment]
Hereinafter, the gas purification apparatus according to the first embodiment of the present invention will be specifically described with reference to the drawings.

  FIG. 1 is a schematic configuration diagram of a gas purification apparatus according to the first embodiment of the present invention, and FIG. 2 is an explanatory diagram of a third treatment tank that it has.

As shown in FIG. 1, the gas purification apparatus according to the present embodiment includes biogas such as sewage digestion gas and food waste fermentation methane gas, and waste pyrolysis gas generated by pyrolyzing waste such as garbage. Such as sulfur-based impurities (for example, hydrogen sulfide, thiocarbonyl, thiophene, mercaptan) 1a (content: 1000 ppm or more), organosilicon-based impurities (for example, siloxane) 1b (content: about 50 mg / Nm ³⁾ ), A gas purification apparatus 10 for purifying the raw gas 1 containing moisture 1c and carbon dioxide 1d, and a first treatment tank that adsorbs and removes sulfur-based impurities 1a and organosilicon-based impurities 1b from the raw gas 1 The first adsorbing tower 11, the first gas feeding means for circulating the raw gas 1 from the lower side (one side) to the upper side (the other side) of the adsorbing tower 11, The first reduced-pressure exhaust means for exhausting the impurities 1a and 1b adsorbed in the adsorption tower 11 and the purified gas 1e that is circulated from the lower side to the upper side of the adsorption tower 11 to adsorb moisture 1c. An adsorption tower 21 which is a second treatment tank to be removed, a second gas feeding means for circulating the purified gas 1e from the lower side (one side) to the upper side (the other side) of the adsorption tower 21, and the adsorption tower 21 The second reduced pressure exhaust means for evacuating the water 1c adsorbed in the adsorption tower 21 and the lower pressure (one side) to the upper side (the other side) of the adsorption tower 21 were purified. An adsorption tower 31 that is a third treatment tank that adsorbs and removes carbon dioxide 1d from the purified gas 1f, and a first gas that passes the purified gas 1f from the lower side (one side) to the upper side (the other side) of the adsorption tower 31. Three gas feeding means and the adsorption tower 31 are depressurized and the adsorption tower 31 And a third decompression means for exhausting the adsorbed carbon dioxide 1d.

  In addition, the gas purification apparatus 10 described above causes carbon dioxide (gas) 1d that has been decompressed and exhausted from one side of the adsorption tower 31 to be fed again from one side of the adsorption tower 31, and the other of the adsorption towers 11 and 21. A first exhaust re-transmission means for feeding the gas to the side, and a second exhaust re-transmission means for feeding the gas 1g flowing from one side of the adsorption tower 31 to the other side to the other side of the adsorption tower 31.

  Examples of the first gas supply means include a blower 16 and valves 18a and 18b.

  Examples of the first vacuum exhaust means include a vacuum pump 56 and a valve 19a.

  A plurality of (two in this embodiment) adsorption towers 11 are provided and connected in parallel. The adsorption tower 11 is arranged in the adsorption tower 11 so as to partition the lower side (one side) and the upper side (the other side) in the adsorption tower 11 and is made of a high silica zeolite that adsorbs the sulfur impurities 1a. The honeycomb-shaped sulfur-based impurity adsorbent 12 is disposed in the adsorption tower 11 so as to partition the lower side (one side) and the upper side (the other side) in the adsorption tower 11, and the organosilicon impurities 1b are It has a honeycomb-shaped organosilicon impurity adsorbent 13 made of adsorbing high silica zeolite.

  Silicalite is mentioned as a high silica zeolite which comprises the sulfur type impurity adsorption agent 12. FIG.

  Note that the high silica zeolite has hydrophobicity, and the amount of adsorption is hardly reduced even in the presence of moisture.

  USM, USY, MCM-41, MCM-48, SBA-1, SBA-3, SBA-7, SBA-15 are listed as the high silica zeolite constituting the organosilicon impurity adsorbent (gas purification agent) 13. In particular, MCM-41, SBA-1, and SBA-15 are preferable, and SBA-15 is most preferable.

  A plurality (two in this embodiment) of adsorption towers 21 are provided and connected in parallel. The adsorption tower 21 is arranged in the adsorption tower 21 so as to partition the lower side (one side) and the upper side (the other side) in the adsorption tower 21 and is made of silica gel that adsorbs moisture and has a honeycomb-shaped moisture. It has an adsorbent 24.

  Examples of the second gas supply means include a blower 26 and valves 28a and 28b.

  Examples of the second decompression means include a vacuum pump 66 and a valve 29a.

  A plurality (three in this embodiment) of adsorption towers 31 are provided and connected in parallel. The adsorption tower 31 is disposed in the adsorption tower 31 so as to partition the lower side (one side) and the upper side (the other side) in the adsorption tower 31 and adsorbs the carbon dioxide 1d. It has a carbon dioxide adsorbent 35 made of zeolite.

  As the X-type zeolite constituting the carbon dioxide adsorbent 35, an X-type zeolite (Li-X, Ca-X, Sr-X, Mg) using any one of Li, Ca, Sr, Mg, and Na as an exchange cation. -X, Na-X), and the silica / alumina ratio is preferably 2 to 2.5, particularly X-type zeolite (Li-X or Na-X) having Li or Na as an exchange cation. More preferably, the silica / alumina ratio is most preferably 2.

  Examples of the third gas feeding means include a blower 36 and valves 38a and 38b.

  Examples of the third decompression means include a vacuum pump 46 and a valve 39a.

  Examples of the first exhaust retransmission supply means include a first surge tank 47, valves 14a, 14b, 19b, 29b, 49a, 49b, flow rate adjusting valves 2, 3 and the like.

  Examples of the second exhaust re-transmission supply means include a second surge tank 57, a flow rate adjusting valve 6, a valve 39b, and the like.

  In the gas purification device 10 described above, the sulfur-based impurity adsorbent 12 is disposed upstream of the organosilicon-based impurity adsorbent 13 in the flow direction of the raw gas 1. The moisture adsorbent 24 is disposed downstream of the sulfur-based impurity adsorbent 12 and the organosilicon impurity adsorbent 13 in the flow direction of the raw gas 1. The carbon dioxide adsorbent 35 is disposed downstream of the sulfur-based impurity adsorbent 12, the organosilicon impurity adsorbent 13, and the moisture adsorbent 24 in the flow direction of the raw gas 1.

  By disposing the sulfur-based impurity adsorbent 12 at such a position, deterioration of the organosilicon impurity adsorbent 13 and the moisture adsorbent 24 due to the sulfur-based impurity 1a can be suppressed. By disposing the carbon dioxide adsorbent 35 at such a position, it is possible to suppress the deterioration of the carbon dioxide adsorbent 35 due to the sulfur-based impurities 1a, the organic silicon-based impurities 1b, and the moisture 1c.

  The gas 1h that flows from the first surge tank 47 to the other side of the adsorption tower 31 and joins the purified gas 1f is adjusted by the flow rate control valves 7 and 8. The carbon dioxide 1d is exhausted outside the system through the flow rate adjustment valve 32 and the valve 33. 1 g of purified gas is recovered via the flow rate control valve 37.

  In such a gas purification apparatus 10, an adsorption step for adsorbing and removing sulfur-based impurities 1 a and organosilicon-based impurities 1 b is performed in one adsorption tower 11, and adsorbents 12, A desorption process for desorbing the sulfur-based impurities 1a and the organosilicon-based impurities 1b adsorbed on the respective 13 is performed. Further, an adsorption process for adsorbing and removing the moisture 1c is performed in one adsorption tower 21, and a desorption process for desorbing the moisture 1c adsorbed by the adsorbent 24 in the other adsorption tower 21 is performed. Further, an adsorption process for adsorbing and removing carbon dioxide 1d is performed in one adsorption tower 31, a purge process for desorbing 1 g of purified gas adsorbed in the other adsorption tower 31 is performed, and another one is performed. A desorption process for desorbing carbon dioxide 1d adsorbed by the adsorbent 35 in the two adsorption towers 31 is performed.

  That is, when an adsorption process is performed in one adsorption tower 11, the valves 18a and 18b corresponding to the gas flow path are opened, while the valves 19a and 19b are closed and the blower 16 is operated, whereby the raw gas 1 is fed into the adsorption tower 11. At this time, the raw gas 1 flows through the adsorption tower 11 from the lower side to the upper side, and the impurities 1a and 1b are adsorbed and removed by the adsorbents 12 and 13 in the adsorption tower 11, respectively. As a result, the raw gas 1 becomes purified gas 1e and is sent out from above the adsorption tower 11.

  When the desorption process is performed in the other adsorption tower 11, the valve 19 a corresponding to the gas flow path is opened, while the valves 18 a, 18 b, and 19 b are closed and the vacuum pump 56 is operated, whereby the adsorption tower 11 is operated. The inside is depressurized. At this time, the impurities 1 a and 1 b adsorbed on the adsorbents 12 and 13 are desorbed from the adsorbents 12 and 13 and exhausted out of the system through the vacuum pump 56.

  Subsequently, when such desorption is performed for a predetermined time, the valves 18a and 18b are closed, while the valves 14b, 19a and 19b are opened, and the flow rate adjusting valve 3 is adjusted, whereby the first surge tank 47 Of carbon dioxide 1d is fed into the adsorption tower 11. By performing this operation, the impurities 1a and 1b adsorbed on the adsorbents 12 and 13 are further desorbed.

  Subsequently, after performing the above-described operation for a predetermined time, the valves 14b, 18a, 18b, and 19a are closed, while the valves 15b and 19b are opened and the flow rate control valve 5 is adjusted to increase the pressure by the vacuum pump 46. The carbon dioxide 1d is fed from the first surge tank 47 into the adsorption tower 11. Thereby, the inside of the adsorption tower 11 is pressurized and becomes a normal pressure. The exhausted impurities 1a and 1b may be recovered.

  When the adsorption process and the desorption process described above are performed for a predetermined time, the desorption process is performed in the adsorption tower 11 that has performed the adsorption process, and the adsorption process is performed in the adsorption tower 11 that has performed the desorption process. By repeatedly performing the above-described steps alternately in the two adsorption towers 11, the removal of the impurities 1a and 1b from the raw gas 1 (purification treatment of the raw gas 1) can be performed continuously.

  Further, when the adsorption process is performed in one adsorption tower 21, the valves 28a and 28b corresponding to the gas flow path are opened, while the valves 29a and 29b are closed and the blower 26 is operated, whereby the adsorption tower is operated. The purified gas 1 e that has been circulated from one side of 11 to the other side and purified is fed into the adsorption tower 21. At this time, the purified gas 1e flows through the adsorption tower 21 from the lower side to the upper side, and the impurities 1c are adsorbed and removed by the adsorbent 24 in the adsorption tower 21. Thereby, the purified gas 1e becomes the purified gas 1f and is sent from the upper side of the adsorption tower 21.

  When the desorption process is performed in the other adsorption tower 21, the valve 29 a corresponding to the gas flow path is opened, while the valves 28 a, 28 b, and 29 b are closed and the vacuum pump 56 is operated, thereby the adsorption tower 21. The inside is depressurized. At this time, the moisture 1c adsorbed by the adsorbent 24 is desorbed from the adsorbent 24 and exhausted outside the system through the vacuum pump 66.

  Subsequently, when such desorption is performed for a predetermined time, the valves 28a and 28b are closed, while the valves 14a, 29a and 29b are opened, and the flow rate control valve 2 is adjusted, so that the inside of the first surge tank 47 Of carbon dioxide 1d is fed into the adsorption tower 21. By performing this operation, the impurity 1c adsorbed on the adsorbent 24 is further desorbed.

  Subsequently, after performing the above-described operation for a predetermined time, the valves 14a, 28a, 28b, and 29a are closed, while the valves 15a and 29b are opened and the flow rate adjusting valve 4 is adjusted so that the pressure is applied by the vacuum pump 46. The carbon dioxide 1d is fed from the first surge tank 47 into the adsorption tower 21. Thereby, the inside of the adsorption tower 21 is pressurized and becomes a normal pressure. The exhausted impurity 1c may be recovered.

  When the adsorption process and the desorption process described above are performed for a predetermined time, the desorption process is performed in the adsorption tower 21 that has performed the adsorption process, and the adsorption process is performed in the adsorption tower 21 that has performed the desorption process. By repeatedly performing the above-described steps alternately in the two adsorption towers 21, the removal of the impurity 1c from the purified gas 1e (purification treatment of the raw gas 1) can be performed continuously.

  Here, an adsorption process, a purge process, and a desorption process in the adsorption tower 31 will be described with reference to FIG. In this figure, the adsorption process is performed in the adsorption tower 31 on the left side in the figure, the purge process is performed in the central adsorption tower 31 in the figure, and the desorption process is performed in the adsorption tower 31 on the right side in the figure. Is shown.

  In one adsorption tower 31 (left side in the figure), the valves 38a and 38b corresponding to the gas flow path of the adsorption tower 31 are opened, while the valves 39a, 39b, 49a and 49b are closed, and the blower 36 is opened. By operating, the purified gas 1 f that is circulated and purified from one side of the adsorption tower 21 to the other side is fed into the adsorption tower 31. At this time, the purified gas 1 f flows from the lower side to the upper side in the adsorption tower 31, and the impurities 1 d are adsorbed and removed by the adsorbent 35 in the adsorption tower 31. As a result, the purified gas 1 f becomes 1 g of purified gas and is sent from above the adsorption tower 31.

  In another adsorption tower 31 (center in the figure), the valves 49a and 49b corresponding to the gas flow path of the adsorption tower 31 are opened, while the valves 38a, 38b, 39a and 39b are closed, and the blower By operating 36 and the vacuum pump 46, the gas 1d in the first surge tank 47 is circulated from one side of the adsorption tower 31 to the other side. At this time, the partial pressure of carbon dioxide 1d is increased in the adsorption tower 31, the carbon dioxide 1d and the purified gas 1g adsorbed on the adsorbent 35 are replaced, and the purified gas 1g is desorbed, and the purified gas 1h. Is delivered from above the adsorption tower 31. This purified gas 1h joins with the purified gas 1f flowing from one side of the adsorption tower 21 to the other side and is fed into an (other) adsorption tower 31 (left in the figure) that performs an adsorption step. Therefore, since 1 g of purified gas adsorbed on the adsorbent 35 can be recovered, the recovery rate of 1 g of purified gas from the raw gas 1 can be improved.

  Further, in another adsorption tower 31 (right side in the figure), the valve 39a corresponding to the gas flow path of the adsorption tower 31 is opened, while the valves 38a, 38b, 39b, 49b are closed, and the vacuum pump By operating 46, the inside of the adsorption tower 31 is depressurized. At this time, the carbon dioxide 1 d adsorbed by the adsorbent 35 is desorbed from the adsorbent 35, passes through the vacuum pump 46, and is stored in the first surge tank 47.

  Subsequently, after performing the above-described operation for a predetermined time, the valve 38a, 38b, 39a, 49a, 49b is closed, while the valve 39b is opened and the flow rate adjustment valve 6 is adjusted so that the pressure is applied by the blower 36. 1 g of purified gas is fed from the second surge tank 57 into the adsorption tower 31. Thereby, the inside of the adsorption tower 31 is pressurized and becomes a normal pressure. In addition, you may make it collect | recover the exhausted carbon dioxide 1d.

  When each of the above-described steps is performed for a predetermined time, the purge step is performed in the adsorption tower 31 that has performed the adsorption step, the desorption step is performed in the adsorption tower 31 that has performed the purge step, and the desorption step is performed. An adsorption step is performed at 31. Further, when each step is performed for a predetermined time, the desorption process is performed in the adsorption tower 31 where the purge process is performed, the adsorption process is performed in the adsorption tower 31 where the desorption process is performed, and the adsorption process is performed. A purge step is performed in the broken adsorption tower 31. Therefore, the process which removes the carbon dioxide 1d from the refined gas 1f and refine | purifies the refined gas 1g can be performed continuously by repeating the process mentioned above in the three adsorption towers 31 sequentially.

  1 g of the purified gas described above can be used as a fuel for power generation in a gas engine or a micro gas turbine.

  Therefore, the purification of the raw gas 1 can be continuously performed by repeatedly performing the operations in the adsorption towers 11, 21, 31 described above.

  The gas purification apparatus 10 described above is disposed in the adsorption tower 11, the sulfur-based impurity adsorbent 12 and the organosilicon impurity adsorbent 13, the moisture adsorbent 24 disposed in the adsorption tower 21, and the adsorption tower 31. And the impurities 1a, 1b, the moisture 1c and the carbon dioxide 1d can be separately removed from the raw gas 1 by pressure swing adsorption (PSA).

  Therefore, conventionally, the sulfur-based impurities removed by the sulfur-based impurity adsorbent are dissolved in the water removed by the moisture adsorbent, and the adsorbent, the adsorption tower, and the exhaust path of the impurities (piping, vacuum pump, valve) In the present embodiment, sulfur-based impurities 1a and moisture 1c contained in the raw gas 1 are sulfur-based impurity adsorbents 12 disposed in the adsorption tower 11, and Since the sulfur-based impurities 1a and the moisture 1c are respectively adsorbed by the moisture adsorbent 24 disposed in the adsorption tower 21 and are discharged out of the system through different exhaust paths, the sulfur-based impurities 1a and the moisture 1c are not in contact with each other. . Therefore, it is possible to avoid corrosion of the adsorption towers 11, 21, the adsorbents 12, 13, and 24, and the exhaust path through which the sulfur impurities 1 a are exhausted by the solution in which the sulfur impurities 1 a are dissolved in the moisture 1 c. it can. As a result, purification by removing sulfur-based impurities 1a and moisture 1c from the raw gas 1 can be carried out stably at a low cost.

  Therefore, according to the gas purification apparatus 10 according to the first embodiment of the present invention, the sulfur-based impurity 1a and the moisture 1c contained in the raw gas 1 are disposed in the adsorption tower 11, the sulfur-based impurity adsorbent 12, and Since the sulfur-based impurities 1a and the moisture 1c are respectively adsorbed by the moisture adsorbent 24 disposed in the adsorption tower 21 and are discharged out of the system through different exhaust paths, the sulfur-based impurities 1a and the moisture 1c are not in contact with each other. . Therefore, it is possible to avoid corrosion of the adsorption towers 11, 21, the adsorbents 12, 13, and 24, and the exhaust path through which the sulfur impurities 1 a are exhausted by the solution in which the sulfur impurities 1 a are dissolved in the moisture 1 c. it can. As a result, purification by removing sulfur-based impurities 1a and moisture 1c from the raw gas 1 can be carried out stably at a low cost.

  In addition, by arranging the organosilicon impurity adsorbent 13 in the adsorption tower 11, purification by removing the organosilicon impurity 1b from the raw gas 1 can be carried out stably at a low cost. By supplying the purified gas 1f discharged from the adsorption tower 21 to the adsorption tower 31 in which the carbon dioxide adsorbent 35 is disposed, the carbon dioxide 1d is adsorbed and removed by the carbon dioxide adsorbent 35, and the calorie and the purity are adjusted. 1 g of high purified gas can be obtained.

  By providing a plurality of adsorption towers 11 and 21 and connecting them in parallel, the purification process of the raw gas 1 can be performed continuously, and the processing efficiency can be improved. Further, by providing three adsorption towers 31 and connecting them in parallel, the purification process of the raw gas 1 can be performed continuously, and the processing efficiency can be improved.

  Since the carbon dioxide 1d desorbed from the carbon dioxide adsorbent 35 disposed in the adsorption tower 31 is fed to one side of the adsorption tower 31, the recovery rate of 1 g of purified gas from the raw gas 1 can be improved. . Further, by supplying the carbon dioxide 1d to the other side of the adsorption towers 11 and 21, the impurities 1a and 1b adsorbed on the adsorbents 12, 13 and 24 and the moisture 1c can be desorbed. 13 and 24 can be efficiently reproduced.

  Further, since the adsorbents 12 and 13 have a honeycomb shape, pressure loss when the raw gas 1 is circulated can be reduced as compared with the case where the adsorbents 12 and 13 are formed in a granular shape. Therefore, a relatively small blower 16 can be used. it can. As a result, initial costs and running costs can be further reduced, and at the same time, a smaller installation space can be achieved.

[Second Embodiment]
Hereinafter, a gas purification apparatus according to a second embodiment of the present invention will be described with reference to the drawings.
FIG. 3 is a schematic configuration diagram of a gas purification apparatus according to the second embodiment of the present invention. However, this gas purification apparatus is the same as the above-described gas purification apparatus according to the first embodiment of the present invention, in which a flow meter, a control device, and a carbon dioxide concentration meter are provided. It is the same structure as the gas purification apparatus which concerns on this embodiment, and attaches | subjects the same code | symbol to the same location, and abbreviate | omits the description.

  As shown in FIG. 3, the gas purifier 20 according to the second embodiment of the present invention has a flow meter 23 a that measures the gas flow rate of the gas 1 d flowing from the first surge tank 47 to one side of the adsorption tower 31. A flow meter 23b for measuring the gas flow rate of the gas 1h fed from the other side of the adsorption tower 31 to the upstream side of the blower 36, and carbon dioxide 1d in the first surge tank 47 and the second surge tank 57. Carbon dioxide concentration meters 27a and 27b which are carbon dioxide concentration measuring means for measuring the concentration of carbon dioxide, the carbon dioxide concentration measured by the carbon dioxide concentration meters 27a and 27b, and the gas flow rate measured by the flow meters 23a and 23b. And control devices 25a and 25b which are control means for controlling the opening degree of the flow rate control valves 7 and 8, respectively.

  In this gas purification device 20, the flow rate of the gas 1d or gas 1h flowing from one side of the adsorption tower 31 to the other side is controlled by the control devices 25a and 25b in one purge step in the adsorption tower 31. .

  Specifically, in the control devices 25a and 25b, when the concentration of carbon dioxide 1d in the second surge tank 57 measured by the carbon dioxide concentration meters 27a and 27b becomes a first predetermined value, for example, 5 vol% or more. The opening degree of one or both of the flow rate adjusting valves 7 and 8 is reduced (adjusted), and the flow rates of the gases 1d and 1h are reduced.

  When the concentration of carbon dioxide 1d in the first surge tank 47 measured by the carbon dioxide concentration meters 27a and 27b becomes a second predetermined value, for example, 95 vol% or less, either one of the flow rate control valves 7 or 8 or Both the openings are relaxed (adjusted), and the flow rates of the gases 1d and 1h are increased.

  Therefore, the carbon dioxide in the mixed gas 1j fed to the adsorption tower 31 is adjusted to a predetermined concentration range, and the carbon dioxide in the purified gas 1g purified by the adsorption tower 31 is reduced to a predetermined concentration or less. Can do.

  In the gas purification apparatus 20 described above, the sulfur-based impurities 1a and the organic silicon-based impurities are converted from the raw gas 1 in the adsorption tower 11 by operating in the same manner as the gas purification apparatus 10 according to the first embodiment described above. 1b is adsorbed and removed to become purified gas 1e, moisture 1c is adsorbed and removed from purified gas 1e by adsorption tower 21 to become purified gas 1f, and carbon dioxide 1d is adsorbed and removed from purified gas 1f by adsorption tower 31 to be purified. It becomes 1g of gas. 1 g of this purified gas is sent from above the adsorption tower 31 and supplied to a gas engine, a micro gas turbine or the like, and used as a fuel for power generation.

  Therefore, according to the gas purification device 20 according to the second embodiment of the present invention, the same effect as the gas purification device 10 according to the first embodiment described above is obtained, and the carbon dioxide 1d is converted from the raw gas 1 to carbon dioxide 1d. Since it is efficiently and stably removed, carbon dioxide in 1 g of purified gas purified from raw gas 1 can be reduced to a predetermined concentration or less to obtain 1 g of purified gas having a high purity. The recovery rate of methane, which is 1 g of gas, can be improved.

[Third embodiment]
Below, the gas purification apparatus which concerns on 3rd embodiment of this invention is demonstrated using drawing.
FIG. 4 is a schematic configuration diagram of a gas purification apparatus according to the third embodiment of the present invention. However, this gas purification apparatus is a gas purification apparatus according to the first embodiment of the present invention described above, in which a mixing tank is provided on the upstream side of the blower arranged in the vicinity of the third treatment tank, Other than that is the same structure as the gas purification apparatus which concerns on 1st embodiment of this invention, and attaches | subjects the same code | symbol to the same location and abbreviate | omits the description.

  As shown in FIG. 4, the gas purification device 30 according to the third embodiment of the present invention has a mixing tank 34 provided on the upstream side of the blower 36 in the gas flow direction and in the vicinity thereof. The mixing tank 34 is supplied with the purified gas 1 f circulated from one side of the adsorption tower 21 to the other side, the first surge tank 47, and the gas 1 h circulated from one side of the adsorption tower 31 to the other side. Can be stored.

  In the mixing tank 34, the gas 1h and the purified gas 1f are mixed and homogenized. The homogenized gas 1 j is circulated from one side of the adsorption tower 31 to the other side by the blower 36.

  However, the mixing tank 34 is more than the sum of the flow rate of the purified gas 1f discharged in one adsorption step in the adsorption tower 21 and the flow rate of the gas 1h discharged in one purge step in the adsorption tower 31. Large capacity.

  In this gas purification device 30, the flow rate of the gas 1h flowing into the mixing tank 34 from the adsorption tower 31 in which the purge process is performed is adjusted by adjusting the flow rate control valves 7 and 8. Therefore, the concentration of methane and carbon dioxide in the gas 1j can be adjusted to a predetermined range. As a result, even if the concentration of 1 g of methane in the gas 1 h fluctuates, the concentration of 1 g of methane in the gas 1 j can be adjusted within a predetermined range, and the adsorption performance of the carbon dioxide adsorbent 35 can be sufficiently expressed. Thus, 1 g of purified gas (methane) can be obtained efficiently and stably from the mixed gas 1j.

  In the gas purification apparatus 30 described above, the sulfur-based impurities 1a and the organic silicon-based impurities are converted from the raw gas 1 in the adsorption tower 11 by operating in the same manner as the gas purification apparatus 10 according to the first embodiment described above. 1b is adsorbed and removed to become purified gas 1e, moisture 1c is adsorbed and removed from purified gas 1e by adsorption tower 21 to become purified gas 1f, and carbon dioxide 1d is adsorbed and removed from purified gas 1f by adsorption tower 31 to be purified. It becomes 1g of gas. 1 g of this purified gas is sent from above the adsorption tower 31 and supplied to a gas engine, a micro gas turbine or the like, and used as a fuel for power generation.

  Therefore, according to the gas purification apparatus according to the third embodiment of the present invention, the flow control valves 7 and 8 are adjusted in addition to the same effects as the gas purification apparatus 10 according to the first embodiment described above. As a result, the flow rate of the gas 1h flowing from one side to the other side of the first surge tank 47 and the adsorption tower 31 is adjusted, and the concentration of methane and the concentration of carbon dioxide in the gas 1h are adjusted to predetermined ranges, respectively. Is done. As a result, this gas 1h and the purified gas 1f purified by the adsorption tower 21 flow into the mixing tank 34, and are mixed and homogenized. The gas 1j also has a predetermined concentration of methane and carbon dioxide in the gas 1j. Adjusted to range. Therefore, the mixed gas 1j is circulated from one side of the adsorption tower 31 to the other side for purification, and the adsorption performance of the carbon dioxide adsorbent 35 in the adsorption tower 31 is sufficiently expressed. 1 g of purified gas can be obtained efficiently and stably.

[Fourth embodiment]
A gas purification apparatus according to a fourth embodiment of the present invention will be described below with reference to the drawings.
FIG. 5 is a schematic configuration diagram of a gas purification apparatus according to the fourth embodiment of the present invention. However, this gas purification apparatus is the same as the gas purification apparatus according to the first embodiment described above, except that the third processing tank is provided with a jacket whose temperature can be adjusted within a predetermined temperature range, while being fed to the third processing tank. Is provided with a heat exchanger capable of adjusting the temperature of the gas to be within a predetermined temperature range, and other than that, it has the same configuration as the gas purification apparatus according to the first embodiment of the present invention, and is the same in the same place. Reference numerals are added and explanations thereof are omitted.

  In the gas purification apparatus 40 according to the fourth embodiment of the present invention, as shown in FIG. 5, a jacket 41 capable of adjusting the temperature within a predetermined temperature range is provided in the adsorption tower 31 that is the third treatment tank, A heat exchanger 42 capable of adjusting the temperature of the gas fed into the adsorption tower 31 to a predetermined temperature range is provided on the downstream side of the blower 36.

  Examples of the jacket 41 include a jacket in which a heat medium (for example, water or air) having a predetermined temperature is circulated in the jacket 41. The jacket 41 only needs to have a structure capable of circulating a heat medium therein. Any structure and shape that can transfer the heat of the heat medium to the adsorption tower 31 may be used.

  The heat exchanger 42 only needs to be capable of adjusting the temperature within a predetermined temperature range.

  Therefore, the carbon dioxide adsorbent 35 itself in the adsorption tower 31 is adjusted to a predetermined temperature range by the jacket 41.

  Further, since the gas supplied to the adsorption tower 31 by the heat exchanger 42 is adjusted to a predetermined temperature range, the heat of this gas is transmitted to the carbon dioxide adsorbent 35, and this carbon dioxide adsorbent 35 is at a predetermined temperature. It becomes a range.

  As a result, the carbon dioxide adsorbent 35 can exhibit a predetermined adsorption performance. The recovery rate of 1 g of purified gas from the raw gas 1 can be improved. Furthermore, it is possible to suppress a decrease in the amount of adsorption of the carbon dioxide adsorbent 35 disposed in the adsorption tower 31 due to 1 g of methane in the purified gas 1f adhering to the third adsorption tower 31.

  In the gas purification apparatus 40 described above, by operating in the same manner as in the case of the gas purification apparatus 10 according to the first embodiment described above, the organosilicon irregular material 1a and the sulfur-based material are converted from the raw gas 1 in the adsorption tower 11. The impurities 1a are adsorbed and removed to become purified gas 1e, the adsorption tower 21 adsorbs and removes moisture 1c from the purified gas 1e to become purified gas 1f, and the adsorption tower 31 adsorbs and removes carbon dioxide 1d from the purified gas 1f. Purified gas 1g. 1 g of this purified gas is sent from above the adsorption tower 31 and supplied to a gas engine, a micro gas turbine or the like, and used as a fuel for power generation.

  Therefore, according to the gas purification apparatus 40 according to the fourth embodiment of the present invention, the same effect as the gas purification apparatus 10 according to the first embodiment described above is obtained, and the gas purification apparatus 40 is disposed in the adsorption tower 31. Since the carbon dioxide adsorbent 35 itself falls within a predetermined temperature range, adsorption of 1 g of the purified gas to the adsorbent 35 can be suppressed, and the adsorption performance of the carbon dioxide adsorbent 35 can be sufficiently expressed. As a result, the recovery rate of 1 g of purified gas from the raw gas 1 can be improved.

[Other Embodiments]
In the gas purification apparatuses 10, 20, 30, and 40 according to the first to fourth embodiments described above, the sulfur-based impurities 1a and the organic silicon-based impurities 1b are caused by the adsorbents 12 and 13 disposed in the adsorption tower 11. The adsorbent 24 arranged in the adsorption tower 21 adsorbs and removes the moisture 1c, and the adsorbent 35 arranged in the adsorption tower 31 adsorbs and removes the carbon dioxide 1d. The adsorbent 12 disposed in the adsorption tower 11 may be a gas purification apparatus that adsorbs and removes the sulfur-based impurities 1 a by the adsorbent 12 disposed and adsorbs and removes moisture by the adsorbent 24 disposed in the adsorption tower 21. , 13 can adsorb and remove sulfur-based impurities 1a and organosilicon-based impurities 1b, and can also be used as a gas purification device that adsorbs and removes moisture 1c with an adsorbent 24 disposed in the adsorption tower 21. . Even in such a gas purification apparatus, the sulfur-based impurities 1a and the moisture 1c are not brought into contact with each other because the sulfur-based impurities 1a and the moisture 1c are discharged out of the system through different exhaust paths. Therefore, it is possible to avoid corrosion of the adsorption tower, the adsorbent, and the exhaust path through which the sulfur-based impurity 1a is exhausted due to a solution in which the sulfur-based impurity 1a is dissolved in the moisture 1c. As a result, purification by removing sulfur-based impurities 1a and moisture 1c from the raw gas 1 can be carried out stably at a low cost.

  In the gas purification apparatus 10 according to the first embodiment described above, the organosilicon impurity 1b is adsorbed and removed using the organosilicon impurity adsorbent 13 disposed in the first adsorption tower 11. As shown in FIG. 6, two adsorption towers 51 provided in the present embodiment and connected in parallel in the gas flow direction, and arranged in the adsorption tower 51, are disposed in the adsorption tower 51. It is good also as the gas purification apparatus 50 which has the activated carbon 52 which is the adsorption layer to adsorb | suck, and the valves 53a and 53b provided before and behind the adsorption tower 51. FIG. In such a gas purification apparatus 50, the organosilicon impurities 1b are more reliably removed from the raw gas 1 by the activated carbon 52, and a purified gas 1g having higher purity can be obtained.

  Further, as another embodiment, high-purity carbon dioxide is supplied by supplying the recovered carbon dioxide to a carbon dioxide adsorbent or the like in the gas purification apparatus according to the first embodiment described above, and depressurizing and exhausting the carbon dioxide. It is good also as a gas refining device which made recovery possible. According to such a gas purification device, the same effect as the gas purification device according to the first embodiment of the present invention described above can be obtained, and high-purity carbon dioxide can be recovered. It can be used effectively, such as using high-concentration carbon dioxide during welding, sterilizing treated water in water purification or sewage treatment, or cooling the carbon dioxide and using it as dry ice. it can.

  As another embodiment, for example, as shown in FIG. 7, the raw gas 1 is circulated from one side of the adsorption tower 11 to the other side by a blower 26 disposed between the adsorption tower 11 and the adsorption tower 21. At the same time, a gas purifier 60 having a blower 26 for circulating the gas 1e flowing from one side of the adsorption tower 11 to the other side from the one side to the other side of the adsorption tower 21 may be used. In such a gas purifier 60, corrosion of the blower 26 due to contact between the blower 26 and the sulfur-based impurity 1a contained in the raw gas 1 can be avoided.

  As another embodiment, for example, as shown in FIG. 8, a gas purifier 70 that can supply dry air 71 to a vacuum pump 56 that depressurizes the adsorption tower 11 and a vacuum pump 66 that depressurizes the adsorption tower 21. good. In such a gas purifier 70, the evacuated impurities 1a, 1b, 1c and the like are prevented from being liquefied by the vacuum pumps 56, 66, and the regeneration efficiency of the adsorbents 12, 13, 24 is further improved. As a result, corrosion of the vacuum pumps 56 and 66 and the exhaust path due to liquefied impurities and the like can be prevented, and further, the load on the vacuum pumps 56 and 66 can be reduced to suppress an increase in running cost.

  Furthermore, as another embodiment, for example, as shown in FIG. 9, a gas purification device 80 in which a drain tank 81 is provided in the vicinity of the gas supply ports 56 a and 66 a of the vacuum pumps 56 and 66 may be used. In such a gas purification device 80, even if the impurities 1a, 1b, 1c and the like adsorbed by the adsorbents 12, 13, and 24 are liquefied and the liquefied impurities are discharged from the vacuum pumps 56 and 66, the drain tank 81 Can be stored. As a result, corrosion of the exhaust path and the like downstream of the drain tank 81 in the gas flow direction is prevented, and an increase in running cost can be suppressed.

  In the gas purification apparatus 20 according to the second embodiment of the present invention described above, the flow meters 23a and 23b are provided to measure the flow rates of the gases 1d and 1h. Of these flow meters 23a and 23b, It is good also as a gas purification apparatus which provided only either one. Even such a gas purifier has the same effects as the gas purifier 20 according to the second embodiment of the present invention described above.

  In the above, in the gas purification apparatus 30 according to the third embodiment of the present invention, the mixing tank 34 is provided, but this mixing tank is used in the first, second, fourth, and other embodiments of the present invention. The gas purifier 10, 20, 40 to 80 according to the embodiment may be provided, and such a gas purifier also has the same effect as the gas purifier 30.

  In the gas purification apparatuses 10 to 80 according to the first to fourth and other embodiments described above, the raw gas 1 is biogas such as sewage digestion gas and food waste fermented methane gas, and waste such as garbage. In the case of using a waste pyrolysis gas generated by pyrolyzing the gas, if purifying a gas containing an organosilicon impurity and a sulfur impurity, the first to fourth, It can be applied in the same manner as in the other embodiments.

  In addition, the gas purification apparatuses 10 to 80 according to the first to fourth and other embodiments described above can be used alone or applied to sewage purification equipment, and the biogas It is also possible to connect to the downstream side of various facilities that generate the pyrolysis gas or the like and to make a system capable of continuous purification treatment.

  In the gas purification apparatuses 10 to 80 according to the first to fourth and other embodiments described above, 1 g of purified gas is supplied to a gas engine, a micro gas turbine, or the like so as to be used as a fuel for power generation or the like. However, for example, it can be used as a fuel gas for a fuel cell, or as a raw material for various compounds (for example, dimethyl ether).

  In the gas purification apparatuses 10 to 80 according to the first to fourth and other embodiments of the present invention described above, the impurities 1a and 1a in the raw gas 1 are formed by pressure swing adsorption (PSA). Although 1b, 1c, and 1d are removed, the present invention can also be applied to, for example, temperature swing adsorption (TSA).

  In order to confirm the effect of the gas purification apparatus according to the present invention, the following tests were conducted.

[Effect confirmation test of organosilicon impurity adsorbent]
The effect confirmation test of the organosilicon impurity adsorbent was performed as follows using the small column test apparatus shown in FIG.

  While adjusting the adsorption pressure with the valve 111a of the nitrogen gas cylinder 111, and adjusting the flow rate of the gas of the organosilicon impurity 1b (siloxane) generated from the siloxane generator 112 and the nitrogen gas 120 with the mass flow controllers 113a and 113b, their concentrations are adjusted. And the on-off valves 119a and 119b are opened to supply the column 114 filled with the honeycomb-shaped organosilicon impurity adsorbent 13 and the siloxane concentration in the gas flowing through the column 114 is determined by GC-MS. Measured with an analyzer 115 such as an HC meter by the FID method or a siloxane analyzer by the ND-IR method (first time).

  After a predetermined time has elapsed, the on-off valves 119a and 119b are closed, the on-off valves 119c and 119d are opened, the valve 116a of the nitrogen gas cylinder 116 is adjusted, and nitrogen gas 121 is purged into the column 114 in the opposite direction to the above gas. By supplying, the reversible concentration of the impurity 1b (siloxane) adsorbed by the adsorbent 13 is almost removed (back washing). After almost removing the reversible impurity 1b (siloxane) from the adsorbent 13, the on-off valves 119c and 119d are closed, the on-off valves 119a and 119b are opened, and the impurity 1b (siloxane) gas is introduced into the column 114. Supply again, and measure the siloxane concentration in the gas flowing through the column 114 with the analyzer 115 (second time).

  By measuring the siloxane concentration in this manner, the total amount of adsorption of the adsorbent 13 with respect to the impurity 1b was obtained in the first time, and the amount of reversible adsorption of the adsorbent 13 with respect to the impurity 1b was obtained in the second time. .

  The test conditions at this time are shown below, and the effect (reversible adsorption amount) is shown in FIG.

<Organic silicon impurities>
One type of decamethyltetrasiloxane (DMTS) <Organic silicon-based impurity adsorbent>
Seven types of USY, MCM-41, MCM-48, SBA-1, SBA-3, SBA-7, SBA-15 <impurity concentration>
2.6 × 10 ³ mg / m ³ N

<Honeycomb shape>
φ10mm × 10mmH
<Adsorption temperature>
25 ° C
<Adsorption pressure>
100 kPa
<Adsorption time>
60 minutes to 120 minutes <back washing time>
180 minutes to 360 minutes

  As shown in FIG. 11, in USY, MCM-41, MCM-48, SBA-1, SBA-3, SBA-7, and SBA-15, the reversible adsorption amounts were 10.0 LN / g / atm, 18. It was 0 LN / g / atm, 10.2 LN / g / atm, 22.4 LN / g / atm, 4.9 LN / g / atm, 8.9 LN / g / atm, 27.6 LN / g / atm. Therefore, SBA-15 showed the highest reversible adsorption performance with respect to USY, MCM-41, MCM-48, SBA-1, SBA-3, and SBA-7. In particular, MCM-41, SBA-1, and SBA-15 exhibit very high reversible adsorption performance with respect to USY, MCM-48, SBA-3, and SBA-7. Among them, SBA-15 is MCM. The highest reversible adsorption performance was exhibited with respect to −41 and SBA-1.

  Further, the above-described adsorption of the organosilicon impurity 1b to the adsorbent 13 and the removal of the impurity 1b from the adsorbent 13 are repeatedly performed four times on the SBA-15 which is the organosilicon impurity adsorbent 13. The amount of reversible adsorption at the second time, the third time, and the fourth time was determined. The result is shown in FIG. In addition, about 2% of water vapor was included in the gas supplied to the column 114 to obtain the fourth reversible adsorption amount.

  As shown in FIG. 12, the values were 27.6 LN / g / atm, 28.1 LN / g / atm, and 29.0 LN / g / atm at the second, third and fourth times, respectively. That is, it was found that the reversible adsorption amount of the adsorbent 13 with respect to the impurity 1b is almost the same, and there is no deterioration in the adsorption performance. Moreover, it turned out that there is no deterioration of adsorption | suction performance also with respect to the gas containing a 4th water | moisture content.

  Therefore, in the gas purification apparatuses 10 to 80 according to the first to fourth and other embodiments of the present invention described above, SBA-1, SBA-3, and SBA are used as the organosilicon impurity adsorbent (gas purification agent) 13. -7 and SBA-15 are used, these adsorbents have reversible adsorption performance of adsorbing organosilicon impurities again after removing the organosilicon impurities adsorbed on the adsorbent. Thus, the adsorption and removal of the organosilicon impurities from the hydrocarbon (raw gas) containing the organosilicon impurities can be performed continuously and stably. Furthermore, if the organosilicon impurity adsorbent 13 is SBA-1 or SBA-15, the amount of reversible adsorption of organosilicon impurities is greater than the conventional adsorbents USY, MCM-41, MCM48, The filling amount of the adsorbent disposed in the treatment tank can be reduced, and the size of the first treatment tank and the cost of the apparatus can be reduced.

  The gas purification apparatus according to the present invention can obtain, for example, high-purity methane gas by applying it to a sewage purification treatment facility, which can be used as a fuel for an incineration facility, as well as a gas engine or a micro It can be supplied to gas turbines and used as fuel for power generation, and can be used as fuel gas for fuel cells and raw materials for various compounds (such as dimethyl ether). can do.

It is a schematic block diagram of the gas purification apparatus which concerns on 1st embodiment of this invention. It is explanatory drawing of the 3rd processing tank which the gas purification apparatus which concerns on 1st embodiment of this invention has. It is a schematic block diagram of the gas purification apparatus which concerns on 2nd embodiment of this invention. It is a schematic block diagram of the gas purification apparatus which concerns on 3rd embodiment of this invention. It is a schematic block diagram of the gas purification apparatus which concerns on 4th embodiment of this invention. It is a schematic block diagram of the gas purification apparatus which concerns on other embodiment of this invention. It is a schematic block diagram of the gas purification apparatus which concerns on other embodiment of this invention. It is a schematic block diagram of the gas purification apparatus which concerns on other embodiment of this invention. It is a schematic block diagram of the gas purification apparatus which concerns on other embodiment of this invention. It is a schematic block diagram of the small column test apparatus used for the effect confirmation test of an organosilicon type impurity adsorption agent. It is a graph showing the test result of the effect confirmation test of an organosilicon type impurity adsorption agent. It is a graph showing the test result of the durability test of SBA-15 which is an organosilicon type impurity adsorption agent.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Source gas 1a Sulfur system impurity 1b Organosilicon system impurity 1c Water | moisture content 1d Carbon dioxide 1e, 1f, 1g Purified gas 1h Gas 1j Gas 2,3,4,5,6,7,8 Flow control valve 10 Gas refiner 11 Adsorption Tower 12 Sulfur-based impurity adsorbent 13 Organosilicon-based impurity adsorbent 16 Blower 18a, 18b, 19a, 19b Valve 20 Gas purification device 21 Adsorption tower 23a, 23b Flow meter 24 Moisture adsorbent 25a, 25b Control device 26 Blower 27a, 27b Carbon dioxide concentration meter 30 Gas purification device 31 Adsorption tower 33, 37 Flow control valve 34 Mixing tank 35 Carbon dioxide adsorbent 36 Blower 38a, 38b, 39a, 39b Valve 46, 56, 66 Vacuum pump 40 Gas purification device 41 Jacket 42 Heat Exchanger 47 First surge tank 50 Gas purification device 51 Adsorption tower 52 Activated carbon catalyst 5 3a, 53b Valve 57 Third surge tank 60 Gas purification device 70 Gas purification device 71 Dry air 80 Gas purification device 81 Drain tank 111 Nitrogen gas cylinder 112 Siloxane generator 113a, 113b Mass flow controller 114 Column 115 Analyzer 116 Nitrogen gas cylinder 117a, 117b Pressure gauges 118a and 118b Flow meters 119a to 119d On-off valve 120 Nitrogen gas 121 Nitrogen gas

Claims (2)

A gas purification apparatus for purifying a raw gas containing sulfur-based impurities, organosilicon-based impurities, and moisture,
A first treatment tank;
First gas feeding means for circulating the raw gas from one side of the first treatment tank to the other side;
First reduced pressure exhaust means for evacuating and exhausting the inside of the first treatment tank;
A sulfur-based impurity adsorbent that is disposed in the first processing tank so as to partition one side and the other side in the first processing tank, and adsorbs the sulfur-based impurities;
An organosilicon-based impurity adsorbent that is disposed in the first processing tank so as to partition one side and the other side in the first processing tank, and adsorbs the organosilicon-based impurities;
A second treatment tank;
A second gas feeding means for circulating the gas flowing from one side of the first processing tank to the other side from the one side of the second processing tank;
A second vacuum exhaust means for evacuating and exhausting the inside of the second treatment tank;
A water adsorbent that is arranged in the second treatment tank so as to partition one side and the other side in the second treatment tank, and adsorbs moisture;
The sulfur-based impurity adsorbent is silicalite,
The organosilicon impurity adsorbent is any one of SBA-1, SBA-3, SBA-7, and SBA-15;
The gas purification apparatus, wherein the moisture adsorbent is silica gel. A gas purification apparatus for purifying a raw gas containing sulfur-based impurities, organosilicon-based impurities, and moisture,
A first treatment tank;
First reduced pressure exhaust means for evacuating and exhausting the inside of the first treatment tank;
A sulfur-based impurity adsorbent that is disposed in the first processing tank so as to partition one side and the other side in the first processing tank, and adsorbs the sulfur-based impurities;
An organosilicon-based impurity adsorbent that is disposed in the first processing tank so as to partition one side and the other side in the first processing tank, and adsorbs the organosilicon-based impurities;
A second treatment tank;
The raw gas is circulated from one side of the first processing tank to the other side, and the gas circulated from one side of the first processing tank to the other side is transferred from one side of the second processing tank to the other side. A second gas supply means for distribution to
A second vacuum exhaust means for evacuating and exhausting the inside of the second treatment tank;
It is arranged in the second treatment tank so as to partition one side and the other side in the second treatment tank, and has a moisture adsorbent that adsorbs moisture,
The sulfur-based impurity adsorbent is silicalite,
The organosilicon impurity adsorbent is any one of SBA-1, SBA-3, SBA-7, and SBA-15;
The gas purification apparatus, wherein the moisture adsorbent is silica gel.

Images