JP2008010538A - Surface light emitting laser element, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface light emitting laser element having a lower semiconductor multilayer film reflecting mirror, an active layer, and an upper semiconductor multilayer film reflecting mirror on a substrate, and having a constriction structure with functions of current constriction and light constriction; and to provide a manufacturing method of the element. <P>SOLUTION: In the surface light emitting laser element, multiple semiconductor layers are laminated on the substrate. At least the lower semiconductor multilayer film reflecting mirror, the active layer, and the upper semiconductor multilayer film reflecting mirror constitute the element. The upper or lower semiconductor multilayer film reflecting mirror comprises a superlattice structure formed of a p-type semiconductor layer where a p-type impurity is doped and has a layer similar to the superlattice structure. A circumferential region of the superlattice structure is constituted of an n-type semiconductor where an n-type impurity is doped. The superlattice structure and the n-type semiconductor are arranged between the p-type semiconductor layers having impurity concentration higher than that of the p-type semiconductor layer constituting the superlattice structure. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a surface emitting laser element and a method for manufacturing the same, and more particularly to a surface emitting laser element having a constriction structure for confining current or light and a method for manufacturing the same.

A vertical cavity surface emitting laser (VCSEL) is a semiconductor laser element that emits light in a direction orthogonal to a substrate. A surface emitting laser element can arrange a large number of surface emitting laser elements in a two-dimensional array on the same substrate, and is attracting attention as a light source for communication or as a device for various other applications. In particular, there is an increasing need for surface emitting laser elements, mainly for applications of parallel optical information processing such as optical interconnection and parallel optical transmission.

  A surface emitting laser element forms a pair of semiconductor multilayer reflectors (DBR) on a semiconductor substrate such as GaAs or InP, and emits light between the pair of semiconductor multilayer reflectors. A laser structure having an active layer to be a region is provided. For example, in a GaAs-based surface emitting laser element, an AlGaAs-based material is used for a multilayer mirror.

  The GaAs surface emitting laser element can be formed on a GaAs substrate, and has a good thermal conductivity and a high reflectivity AlGaAs multilayer mirror, so that the 0.8 μm to 1.0 μm band can be used. It is considered promising as a laser element capable of emitting the laser beam. A surface-emitting laser element using a GaInNAs-based material for the active layer is considered promising as a surface-emitting laser element that can emit light in a long wavelength range of 1.2 μm to 1.6 μm. In these surface emitting laser elements, in order to increase the current injection efficiency and reduce the threshold current value, an oxide confinement type surface emitting semiconductor laser element that has a structure in which the current injection region is confined by an AlAs oxide layer is proposed. (Patent Document 1).

Here, with reference to FIG. 5 and FIG. 6, the configuration of a conventional surface emitting laser element having a long oscillation wavelength, specifically, a 1.3 μm band will be described. A conventional surface emitting semiconductor laser device 10 having an oscillation wavelength band of 1.3 μm is formed by sequentially forming p-Al _0.9 Ga _0.1 As / p-GaAs 35.5 on a p-GaAs substrate 12 having a thickness of about 100 μm. The lower reflecting mirror 14 made of a pair, the undoped GaAs lower cladding layer 18, the active layer 20, the undoped GaAs upper cladding layer 22, the upper reflecting mirror 24 made of 30 pairs of n-Al _0.9 Ga _0.1 As / n-GaAs, and the n− A laminated structure composed of the GaAs cap layer 26 is provided. As shown in FIG. 5, the uppermost layer of the lower reflecting mirror 14 made of 35.5 pairs of p-Al _0.9 Ga _0.1 As / p-GaAs has a thickness of 20 nm instead of the p-Al _0.9 Ga _0.1 As film. An Al oxide layer 16 / p-AlAs layer 17 is formed.

Among the laminated structures, an n-GaAs cap layer 26, an upper reflector 24 composed of 30 pairs of n-Al _0.9 Ga _0.1 As / n-GaAs, an undoped GaAs upper cladding layer 22, an active layer 20, and an undoped GaAs lower cladding layer 18 The Al oxide layer 16 / AlAs layer 17 is formed as a mesa post structure 30 having a diameter of 40 to 45 μm by a cylindrical groove 28.

As shown in FIG. 6, the lower reflecting mirror 14 composed of 35.5 pairs of p-Al _0.9 Ga _0.1 As / p-GaAs includes a p-Al _0.9 Ga _0.1 As film 50 having a thickness of 110 nm and a p-layer having a thickness of 94 nm. The GaAs film 46 is composed of 35.5 pairs of multilayer films laminated via a composition gradient layer.
The Al oxide layer 16 is formed along the side wall of the mesa post structure 30 by oxidizing the AlAs layer to form a current confinement region having a high electrical resistance, and the AlAs layer 17 is formed as a circular region in the center portion, and current injection The route is configured.
The active layer 20 uses GaInAsN as a well layer.
The upper reflecting mirror 24 is composed of 30 pairs of multilayer films in which an n-Al _0.9 Ga _0.1 As film 54 having a thickness of 110 nm and an n-GaAs film 56 having a thickness of 94 nm are stacked via a composition gradient layer.

A silicon nitride film 32 is formed on the entire surface including the groove wall of the cylindrical groove 28 and the mesa post structure 30. Then, the silicon nitride film 32 on the upper surface of the mesa post structure 30 is removed in a circular shape having a diameter of 30 μm to expose the n-GaAs cap layer 26.
A ring-shaped AuGeNi / Au metal laminated film having an inner diameter of 20 μm and an outer diameter of 30 μm is formed as an n-side electrode 34 there. Further, a Ti / Pt / Au laminated metal pad that covers and connects the n-side electrode 34 with a circular opening at the center is formed as an extraction electrode 36 of the n-side electrode 34.
An AuZn film is formed as a p-side electrode 38 on the back surface of the p-GaAs substrate 12.

  A surface-emitting laser element that uses an n-type semiconductor substrate and has a reverse positional relationship between the p-type semiconductor layer and the n-type semiconductor layer instead of the p-GaAs substrate 12 has also been conventionally developed. In that case, the oxidized constricting layer is formed in the upper DBR mirror and in the vicinity of the active layer 20.

Such an oxide constriction layer is obtained by oxidizing a laminated structure processed into a mesa post in a water vapor atmosphere at a temperature of about 400 ° C., and selectively oxidizing Al of the AlAs layer 17 from the outside of the mesa post. A current confinement layer made of the Al oxide layer 16 is formed.
In such an oxide confinement layer, the refractive index of the oxidized region is lower than that of the non-oxidized region serving as the current injection region, and the core portion of the non-oxidized region and the cladding portion of the oxidized region are formed, and also has an optical confinement function. ing. The difference in equivalent refractive index between the oxidized region and the non-oxidized region is about 0.005, and in order to obtain a single mode operation, the area of the non-oxidized region that becomes a laser beam path (optical aperture) is about 20 to 30 μm ^2. Must be:

In view of this, a surface emitting laser element having an optical confinement structure having an optical confinement function has been developed in addition to the oxidized constriction layer for confining current.
For example, two types of oxidized constricting layers having different diameters of non-oxidized regions are provided, and surface emitting laser elements that perform the functions of current confinement and optical confinement have been developed. (Patent Document 2)
Alternatively, a surface emitting laser element has been developed that performs optical confinement by lowering the refractive index of a semiconductor in a region doped with impurities by doping high-concentration impurities in the periphery of the semiconductor constituting the multilayer reflector. ing. (Patent Document 3)

On the other hand, the conventional edge-emitting semiconductor is a method of doping impurities into a superlattice structure in which thin semiconductor layers of different materials are alternately stacked, disordering the superlattice layer in that region, and controlling the refractive index of the semiconductor. Considered in lasers. (Patent Document 4)

JP 2003-179308 A JP 2005-93634 A JP 2003-124570 A Japanese Patent Laid-Open No. 2-106986

As described above, in the oxidized constriction type surface emitting laser element, a single mode operation can be obtained by reducing the area of the non-oxidized region which becomes the current injection region of the oxidized constricting layer. However, the area of the current injection region and the light output are in a proportional relationship, and the light output is reduced by reducing the area of the current injection region.
In addition, in an oxidation confinement type surface emitting laser element, when a mesa post is formed and a part of a specific semiconductor layer is oxidized by an oxidation process, a semiconductor layer exposed on a side surface of a mesa post such as a multilayer reflector or an active layer is formed. Since the end surface portion is also exposed to strong oxidation conditions, the exposed end surface portion may be oxidized. Such oxidation of the end face portion causes generation of stress due to volume contraction and damage to the active layer, and decreases the reliability of the surface emitting laser element.

On the other hand, in a surface emitting laser element provided with a current confinement structure and an optical confinement structure, the manufacturing process becomes complicated and the manufacturing cost increases.
In addition, by doping impurities into a superlattice structure in which thin semiconductor layers of different materials are alternately stacked, the superlattice layer in that region becomes disordered. Depending on the diffusion constant depending on the type of impurities, the doping amount and heat treatment are performed. It was difficult to control the disordered region of the superlattice and the refractive index obtained by controlling the temperature and heat treatment time.

In view of the above, the present invention provides a surface emitting laser device having a constriction structure having a current confinement function and an optical confinement function in a surface emitting laser element having a lower semiconductor multilayer reflector, an active layer, and an upper semiconductor multilayer reflector on a substrate. It is an object of the present invention to provide a laser element and a manufacturing method thereof.

In order to achieve the above object, a surface emitting laser element according to the present invention is a surface emitting laser in which semiconductor layers are multilayered on a substrate to form at least a lower semiconductor multilayer mirror, an active layer, and an upper semiconductor multilayer reflector. In the element, one of the upper or lower semiconductor multilayer mirror includes a superlattice structure composed of a p-type semiconductor layer doped with a p-type impurity, and is the same layer as the superlattice structure, The outer peripheral region of the superlattice structure is composed of an n-type semiconductor doped with n-type impurities, and the superlattice structure and the n-type semiconductor are higher in impurity concentration than the p-type semiconductor layer constituting the superlattice structure. It is characterized by being disposed between p-type semiconductor layers having an impurity concentration.

In the method of manufacturing the surface emitting laser element of the present invention, a semiconductor layer constituting an n-type semiconductor multilayer reflector, an active layer, and a semiconductor layer constituting a p-type semiconductor multilayer reflector are formed on a substrate. A laminating step of sequentially laminating to form a laminated structure;
Steps of ion-implanting n-type impurities in a part of the semiconductor layer constituting the p-type semiconductor multilayer mirror and steps of disordering the region where the n-type impurities are implanted by heat treatment are sequentially performed. It is characterized by having.

In the surface emitting laser element of the present invention and the surface emitting laser element manufactured by the method of the present invention, a highly reliable surface emitting laser element having functions of optical confinement and current confinement can be provided.

但し、
Xo： AlGaAsのAl組成の初期値
X(z)：相互拡散後の距離ｚにおけるAlGaAsのAl組成
L_z： AlGaAs層厚
L_d： Al原子の相互拡散距離

L_dはAl原子の相互拡散距離であるが、イオン注入した原子種による拡散定数や注入量、そして再成長温度や熱処理温度および処理時間による制御できる。 Impurities are doped into a superlattice structure in which thin layers with different Al composition ratios of an AlGaAs semiconductor used as a constituent material of a multilayer mirror of a surface emitting laser element are alternately laminated, and heat treatment is performed at 500 ° C. to 900 ° C. It is known that only in a region doped with impurities, mixed crystallization is promoted and the superlattice structure becomes disordered. It is said that the interdiffusion between Al atoms and Ga atoms in the AlGaAs / AlGaAs superlattice structure occurs by the following equation as a result of diffusion of ions implanted as impurities.

However,
Xo: Initial value of Al composition of AlGaAs
X (z): Al composition of AlGaAs at distance z after interdiffusion
L _z : AlGaAs layer thickness
L _d : Interdiffusion distance of Al atoms

L _d is the interdiffusion distance of Al atoms, and can be controlled by the diffusion constant and implantation amount of the ion-implanted atomic species, and the regrowth temperature, heat treatment temperature, and treatment time.

  However, in order to satisfactorily control the difference in equivalent refractive index between the core portion and the clad portion of the surface emitting laser element and form an optical confinement structure, the diffusion constant and implantation amount due to the ion-implanted atomic species as described above It was also found that a stable and good optical confinement structure cannot always be formed even if control is performed by the regrowth temperature, the heat treatment temperature and the treatment time. Although the AlGaAs / AlGaAs superlattice structure can be disordered by properly selecting the ion implanted atomic species and implantation amount and optimizing the regrowth temperature, heat treatment temperature and treatment time, the diffusion of the ion implanted atoms can be reduced. Suppression is very difficult. Since the diffusion of impurities cannot be controlled, there arises a problem that the difference in the equivalent refractive index between the core part and the clad part forming the optical confinement structure deviates from a predetermined value. In addition, when impurities are diffused to the active layer, there is a problem that the light emission characteristics of the laser are affected.

  In order to suppress the diffusion of impurities, by adopting a structure in which the superlattice structure is sandwiched between layers doped with other elements at a high concentration, a layer doped with other elements at a high concentration functions as a diffusion suppression layer, Impurities can be prevented from diffusing into layers other than the superlattice structure. For example, when Si ions are implanted into an AlGaAs / AlGaAs superlattice structure, a layer doped with high-concentration carbon (C) or beryllium (Be) can be used as a diffusion suppression layer for Si atoms.

In the optical confinement structure formed by such a method, the refractive index difference between the core portion and the clad portion can be reduced to about 0.005, and the laser light can be oscillated in a single mode even if the optical aperture is increased.
Normally, the electrostatic withstand voltage of the surface emitting laser element has a correlation with the area of the opening portion of the current confinement as shown in FIG. 1, but the optical confinement structure of the surface emitting laser element of the present invention also functions as a current confinement structure. In addition, since the opening area of the current confinement can be increased, the electrostatic withstand voltage of the surface emitting laser element can be improved.
Hereinafter, embodiments of the present invention will be described specifically and in detail with reference to the accompanying drawings.

[Embodiment 1]
FIG. 3 is a cross-sectional view illustrating the state of stacking of semiconductor layers of the surface emitting laser element according to the first embodiment of the invention illustrated in FIG. 2. In the surface emitting semiconductor laser device 110 of this embodiment, the positional relationship between the p-type semiconductor layer and the n-type semiconductor layer is reversed from the conventional surface emitting laser device 10 shown in FIG. On the n-GaAs substrate 112, each layer has a thickness of λ / 4n (where λ is an oscillation wavelength and n is a refractive index) of n-Al _0.9 Ga _0.1 As / n-Al _0.2 Ga _0.8 As. 35 multi-pair lower multilayer reflector 114, lower clad layer 118, GaAs well layer and Al _0.2 Ga _0.8 As barrier layer consisting of Al _0.2 Ga _0.8 As, upper clad layer 122, and each layer A laminated structure of upper multilayer reflectors 124A and B composed of 30 pairs of p-Al _0.9 Ga _0.1 As / p-Al _0.2 Ga _0.8 As having a thickness of λ / 4n (λ is an oscillation wavelength and n is a refractive index). I have.
A ring-shaped p-side electrode 138 is formed on the upper multilayer mirror. Further, an n-side electrode 134 is formed on the back surface of the n-GaAs substrate.

The surface emitting laser element of the present embodiment is different from the conventional surface emitting laser element in that there is no oxidized constricting layer, and instead of Al _0.3 Ga _0.7 As / with a thickness of 6 nm in the p-type multilayer reflector. It has a superlattice structure 160 in which p-Al _0.18 Ga _0.82 As is alternately stacked for eight periods. The upper and lower layers of the superlattice structure 160 are layers 150 doped with C, which is a p-type impurity, at a high concentration. The p-type impurity concentration of the p-type semiconductor constituting the p-type upper multilayer mirrors 124A and 124B and the superlattice structure 160 is preferably 1 × 10 ¹⁸ to 1 × 10 ¹⁹ cm ⁻³ . Further, in the layer 150 in which C is heavily doped, the impurity concentration is preferably 1 × 10 ¹⁹ to 1 × 10 ²⁰ cm ⁻³ .

Further, in the same layer of the superlattice structure 160 sandwiched between layers 150 heavily doped with C, the outer peripheral region surrounding the region to be an optical aperture region in a ring shape is a dose of Si, which is an n-type impurity. The AlGaAs semiconductor 170 is doped with 2 × 10 ¹⁴ cm ^{−2 and the} superlattice layer is disordered. The area of the optical aperture region is about 40 μm ² .
Since the refractive index in the outer peripheral region differs from that in the optical aperture region due to Si doping and disordering, an optical confinement structure can be formed. Further, since the p-type semiconductor layer is sandwiched between n-type semiconductors doped with Si in the outer peripheral region, the structure is such that current does not easily flow and has a function of current confinement.

The surface-emitting laser element has an emission wavelength of 850 nm, a laser beam having a narrow spectral width, and can operate at a high frequency of 10 Gbps.
Furthermore, in the surface emitting laser element of this embodiment, the optical aperture area is wide and the electrostatic withstand voltage characteristic is about 1.5 times as good as that of the conventional surface emitting laser element having the oxidized constriction layer.
FIG. 3 shows a profile obtained by SIMS (secondary ion mass spectrometry) of impurities in the depth direction of the semiconductor layer in the cladding portion (outer peripheral region) in the vicinity of the optical confinement structure of the surface emitting laser element of this embodiment.
It can be seen that after heat treatment, Si diffuses in the depth direction of the semiconductor layer, but diffusion is suppressed by the layer doped with C at a high concentration.

Next, a method for manufacturing the surface emitting laser element 110 of this embodiment will be described.
The surface emitting laser element 110 of the present embodiment can be manufactured by a process substantially similar to that of the conventional surface emitting laser element 10 shown in FIG.
However, since it is not necessary to form an oxidized constricting layer, the process for forming a mesa post shape and the oxidation process, which are necessary in the conventional surface emitting laser element, are not required.

4A to 4C are diagrams illustrating a method for manufacturing the optical confinement structure of the surface-emitting laser element 110 illustrated in FIG.
First, as shown in FIG. 4A, the lower multilayer mirror 114, the lower cladding layer 118, the quantum well active layer 120, the upper cladding layer 122, and the upper multilayer reflection are formed on the n-GaAs substrate 112 by epi growth. Two pairs of p-AlGaAs layers constituting the mirror 124B are stacked, and the uppermost layer is doped with high-concentration C, and a layer 150 doped with C at high concentration is formed. Thereafter, Al _0.3 Ga _0.7 As / p-Al _0.18 Ga _0.82 As each having a thickness of 6 nm is alternately stacked for 8 periods to form a superlattice structure 160.
Next, as shown in FIG. 4B, a SiO ₂ mask 180 is provided in a portion to be an optical aperture, and Si is ion-implanted, so that the semiconductor in the annular region surrounding the optical aperture is doped with Si.
Further, as shown in FIG. 4C, one layer doped with C at a high concentration at a growth temperature of 700 ° C. is provided, and 23 pairs of p-AlGaAs layers are stacked as the upper multilayer reflector 124A. When the upper multilayer reflector 124A is grown, the superlattice structure 160 is also heat-treated at 700 ° C., Si diffuses in the annular region doped with Si, and the superlattice structure 160 is disordered. Made.

[Embodiment 2]
Next, a surface emitting laser element according to the second embodiment will be described. The surface-emitting laser element of the second embodiment is different from the surface-emitting laser element of the embodiment 110 in that the active layer oscillates an In _0.3 Ga _0.7 As well layer that oscillates a laser beam in the 1100 nm band, and GaAs. This is that a quantum well active layer composed of a barrier layer is used, and the superlattice structure is a structure in which Al _0.36 Ga _0.64 As (6 nm) / GaAs (6 nm) are alternately stacked for five periods. Further, although the area of the optical aperture is 50 μm ² , it can oscillate in a single mode and operate at a modulation frequency of 10 Gbps. The electrostatic withstand voltage was about twice as high as that of the conventional surface emitting laser element using the oxidized constriction layer.

[Embodiment 3]
A surface emitting laser element according to the third embodiment will be described. The surface-emitting laser element of the third embodiment is different from the surface-emitting laser element 110 of the first embodiment in that the active layer is composed of an InGaAsN well layer that oscillates laser light in the 1300 nm band and a quantum well activity composed of a GaNAs barrier layer. The layer is used, and the superlattice structure is formed by alternately laminating Al _0.36 Ga _0.64 As (6 nm) / GaAs (6 nm) for five periods. In the surface emitting laser element of the present embodiment, even when the area of the optical aperture is 80 μm ² , the laser light is oscillated in a single mode, and the single mode output at 85 ° C. is 2 mW, which is significantly larger than that of the conventional surface emitting laser element. Improved.

It is a figure which shows the correlation of the electric current opening part area of a surface emitting laser element, and an electrostatic withstand voltage. It is sectional drawing of the surface emitting laser element which concerns on Embodiment 1 of this invention. It is a figure which shows the mode of the diffusion of the impurity in the optical confinement structure vicinity of the surface emitting laser element which concerns on this invention. It is a figure for demonstrating the manufacturing method of the surface emitting laser element which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the form of the surface emitting laser element which has the conventional oxidation confinement layer. It is sectional drawing which shows the form of the upper multilayer reflector, the active layer, and the lower multilayer reflector of the surface emitting laser element which has the conventional oxidation confinement layer.

Explanation of symbols

10 Conventional surface emitting laser element
12 p-GaAs substrate 14 p-Al _0.9 Ga _0.1 As / p-GaAs lower reflector made of 35.5 pairs 16 Al oxide layer 17 AlAs layer 18 non-doped GaAs lower cladding layer 20 conventional active layer 22 non-doped GaAs upper portion Clad layer 24 n-Al _0.9 Ga _0.1 As / n-GaAs 30 upper reflector 26 n-GaAs cap layer 28 cylindrical groove 30 mesa post structure 32 silicon nitride film 34 n-side electrode 36 n-side electrode lead-out Electrode 38 p-side electrode 46 p-GaAs film 50 p-Al _0.9 Ga _0.1 As film 54 n-Al _0.9 Ga _0.1 As film 56 n-GaAs film 110 Surface emitting laser element 112 of Embodiment 1 n-GaAs substrate 114 Lower multilayer Film reflector 118 Lower cladding layer 120 Quantum well active layer 122 Upper cladding layer 24A, B upper multilayer reflector
134 n-side electrode 138 p-side electrode 150 C heavily doped layer 160 superlattice structure 170 disordered AlGaAs semiconductor 180 SiO ₂ mask

Claims (11)

In a surface emitting laser element in which a plurality of semiconductor layers are stacked on a substrate, and at least a lower semiconductor multilayer reflector, an active layer, and an upper semiconductor multilayer reflector are configured,
Either one of the upper or lower semiconductor multilayer reflector includes a superlattice structure composed of a p-type semiconductor layer doped with a p-type impurity,
An outer peripheral region that is the same layer as the superlattice structure and surrounds the superlattice structure in an annular shape is composed of an n-type semiconductor layer doped with n-type impurities,
The superlattice structure and the n-type semiconductor layer are disposed between p-type semiconductor layers having an impurity concentration higher than that of the p-type semiconductor layer constituting the superlattice structure. Surface emitting laser element.
2. The surface emitting laser according to claim 1, wherein the p-type semiconductor layer having a high impurity concentration is a diffusion suppressing layer having a lower atomic diffusion rate than the p-type semiconductor layer constituting the superlattice structure. element.
3. The surface light emission according to claim 1, wherein the p-type impurity amount of the p-type semiconductor layer constituting the superlattice structure is 1 × 10 ¹⁸ to 1 × 10 ¹⁹ cm ^−3. Laser element.
5. The surface emitting laser according to claim 1, wherein the p-type semiconductor layer having the high impurity concentration has a p-type impurity amount of 1 × 10 ¹⁹ to 1 × 10 ²⁰ cm ^−3. element.
The p-type impurity amount of the p-type semiconductor layer having the high impurity concentration is 10 times or more of the p-type impurity amount of the p-type semiconductor layer constituting the superlattice structure. The surface emitting laser element according to any one of the above.
The element doped as the p-type impurity of the superlattice structure or / and the p-type semiconductor layer having the high impurity concentration includes one kind selected from C and Be. 2. The surface emitting laser element according to 1.
The surface emitting laser element according to claim 1, wherein the n-type impurity of the n-type semiconductor layer is Si (silicon).
8. The surface emitting laser element according to claim 1, wherein the n-type semiconductor layer is a semiconductor layer co-doped with an n-type impurity and a p-type impurity.
The superlattice structure and a region surrounding the superlattice structure are made of a semiconductor material made of Al _x Ga _1-x As (0 ≦ x ≦ 1). The surface emitting laser element described.
The surface emitting laser element according to any one of claims 1 to 9, wherein the superlattice structure is formed by alternately laminating layers having a composition ratio of 20 nm or less.
A laminating step of sequentially laminating a semiconductor layer constituting an n-type semiconductor multilayer reflector on the substrate, an active layer, and a semiconductor layer constituting a p-type semiconductor multilayer reflector;
A step of ion-implanting n-type impurities into a part of the semiconductor layers constituting the p-type semiconductor multilayer mirror;
A method of manufacturing a surface-emitting laser element, comprising sequentially performing a heat treatment to disorder the region into which the n-type impurity has been implanted.

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