JP2008010418A - Display device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-luminance organic EL element which can be operated on such a substrate as a glass substrate which cannot withstand a high temperature and provide a manufacturing method of a display device which is simpler and has a higher productivity. <P>SOLUTION: A first transparent substrate having a first transparent electrode layer and a second substrate having at least a second electrode layer are bonded by resin hardening with ultraviolet rays, or the like, to obtain an inorganic EL light-emitting element and a display device is manufactured. A light-emitting layer is pinched between the first transparent substrate having the first electrode layer and the second substrate having the second electrode layer and can be formed on either side of the first electrode layer or the second electrode layer. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a method for manufacturing a display device.

In recent years, development of a liquid crystal display device and an electroluminescence display device in which thin film transistors (hereinafter also referred to as “TFTs”) are integrated on a glass substrate has been advanced. Each of these display devices uses a thin film forming technique on a glass substrate to form a thin film transistor, and a liquid crystal element or a light emitting element (hereinafter referred to as “electroluminescence” (hereinafter referred to as “light emitting element”) as a display element on various circuits constituted by the thin film transistor. Also referred to as “EL”.) An element) is formed to function as a display device.

A light-emitting element utilizing electroluminescence is distinguished depending on whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element and the latter is called an inorganic EL element.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. A dispersion-type inorganic EL element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and has been widely studied because an element can be manufactured by a simple method.

On the other hand, a thin-film inorganic EL element generally has a structure in which a light-emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes. The dielectric layer and the light-emitting layer are formed by a resistance heating method, an electron beam (EB) method, The film is formed by vacuum deposition using a sputtering method or the like. The phosphor is usually made by adding Zn or Cu or Mn to ZnS, and the amount or element of the additive is changed depending on the desired emission color or the like.

In order to obtain excellent stability, high light emission efficiency, and high brightness in the thin film type inorganic EL element manufactured in this way, generally, after forming the light emitting layer, heat treatment at high temperature is performed to obtain crystallinity. The method of improving is taken. In particular, with a thioaluminate phosphor known as a blue material capable of realizing high brightness and high color purity, annealing is performed at a very high temperature of 500 to 900 (° C.) as thermal annealing after forming the light emitting layer. By performing, the original performance can be exhibited (for example, refer to Patent Document 1). However, when such a high temperature treatment is performed, a substrate such as a glass having low heat resistance cannot be used, and a process for manufacturing an element is limited.
JP 2005-520924 A

Therefore, an object of the present invention is to provide a high-brightness inorganic EL element that is driven on a substrate that cannot withstand high temperatures such as a glass substrate. In addition, a technique for manufacturing a display device that is simpler and more productive is provided.

In addition, a display device can be manufactured using the present invention. In a display device to which the present invention can be used, a light-emitting element in which a layer that emits light called electroluminescence is interposed between electrodes and a thin film transistor (hereinafter also referred to as a TFT (Thin Film Transistor)) are connected. A light emitting display device (also simply referred to as a light emitting device). The EL element includes an element that includes at least a material that can obtain electroluminescence and emits light when an electric current flows.

In the present invention, a light-transmitting first substrate having a light-transmitting first electrode layer and a second substrate having at least a second electrode layer are bonded with a resin curable with ultraviolet rays or the like. An inorganic EL light emitting element is formed. The light-emitting layer is sandwiched between a light-transmitting first substrate having a first electrode layer and a second substrate having a second electrode layer, and the second electrode layer is also provided on the first electrode layer side. It may be formed on the side. When the light emitting layer is formed on the first electrode layer side, the light emitting layer is provided between the first electrode layer and the resin, and when the light emitting layer is formed on the second electrode layer side, the light emitting layer is A structure is provided between the second electrode layer and the resin.

According to one method for manufacturing a display device of the present invention, a first dielectric layer is formed over a first electrode layer formed over a first substrate, and a light emitting layer is formed over the first dielectric layer. Then, an adhesive layer made of an uncured resin is formed on the light emitting layer, and the adhesive layer is cured after contacting the adhesive layer and the second electrode of the second substrate having the second electrode layer. A light emitting element is formed.

According to one method for manufacturing a display device of the present invention, a first dielectric layer is formed over a first electrode layer formed over a first substrate, and a light emitting layer is formed over the first dielectric layer. A second dielectric layer is formed on the light emitting layer, an adhesive layer made of uncured resin is formed on the second dielectric layer, and a second layer having an adhesive layer and a second electrode layer is formed. After making contact with the second electrode of the substrate, the adhesive layer is cured to form a light emitting element.

According to one method for manufacturing a display device of the present invention, an adhesive layer is formed by adhering a resin having a curing adhesive function dispersed in a particulate light emitting material on a first electrode layer formed over a first substrate. After forming and bringing the adhesive layer into contact with the second electrode of the second substrate having the second electrode layer, the adhesive layer is cured to form a light emitting element.

According to one method for manufacturing a display device of the present invention, a light-emitting material is dispersed in a solution containing a binder over a first electrode layer formed over a first substrate, and a solution containing the light-emitting material and the binder is manufactured. A light-emitting layer including a light-emitting material and a binder is formed by being attached and fired on the first electrode layer, and a resin having a cured adhesive function is attached to the light-emitting layer to form an adhesive layer. The adhesive layer and the second electrode After contacting the second electrode of the second substrate having the layer, the adhesive layer is cured to form a light emitting element.

The resin having a curing adhesive function may be a single resin such as an epoxy resin, or may be mixed with a high dielectric material or a conductive material according to circumstances.

By using the present invention, a substrate subjected to high temperature treatment and a substrate not subjected to high temperature treatment can be separately manufactured to finally form one display device. Therefore, a high-brightness inorganic EL display device that can be driven over a substrate that cannot be subjected to high-temperature treatment can be manufactured.

In the present invention, since the first substrate and the second substrate can be processed separately, the number of options for the device manufacturing method is increased, leading to improvement in productivity. In addition, by dispersing a light emitting material, a high dielectric material, and a conductive material in the adhesive layer, functions other than adhesion can be provided, and the process can be simplified.

Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
A method for manufacturing the light-emitting element in this embodiment will be described in detail with reference to FIGS.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has a light emitting layer in which particles of a light emitting material are dispersed in a binder, and the latter has a light emitting layer made of a thin film of a fluorescent material. However, the mechanism is common, and light emission can be obtained by collision excitation of the base material or emission center by electrons accelerated by a high electric field. In this embodiment mode, a method for manufacturing a thin-film inorganic EL element will be described.

1A to 1C illustrate a method for manufacturing a light-emitting element using the present invention. A structure 18 in FIG. 1A includes a first substrate 11, a first electrode 12, a first dielectric layer 13, and a light emitting layer 14. Note that the formation process of the light emitting layer 14 may include a heat treatment process of the layer including the light emitting material in addition to the formation process of the layer including the light emitting material. The heat treatment step is preferably performed at 400 ° C. or higher.

As shown in FIG. 1B, an adhesive resin is attached on the light emitting layer 14 of the structure 18 to form the adhesive layer 15.

Here, as the adhesive resin, a resin that is cured by light energy such as ultraviolet rays or an epoxy resin that is cured by thermal energy can be used. In addition, bisphenol A type liquid resin, bisphenol A type solid resin, bromine-containing epoxy resin, bisphenol F type resin, bisphenol AD type resin, phenol type resin, cresol type resin, novolac type resin, cyclic aliphatic epoxy resin, epibis type epoxy Resins, glycidyl ester resins, glycidyl amine resins, heterocyclic epoxy resins, modified epoxy resins, and the like can be used. The thickness of the adhesive resin is preferably 0.5 μm or more and 550 μm or less.

As a method for attaching the adhesive resin, a dropping method, a dispenser method, a droplet discharging method, a screen printing method, or the like can be used.

This adhesive resin may be a single material, or a high dielectric material may be mixed as necessary.

Further, a structure 19 having the second electrode 16 and the second substrate 17 is prepared separately, and the second electrode 16 and the adhesive layer 15 are brought into contact with each other. After the contact, the adhesive layer 15 is cured.

As a method for curing the adhesive resin applicable to the present invention, means such as ultraviolet irradiation or heating can be used depending on the type of the adhesive resin.

Through the above steps, the light-emitting element illustrated in FIG. 1C can be manufactured. By using the present invention, the structure 18 and the structure 19 can be manufactured by completely different processes. Therefore, a high-quality display device can be manufactured by optimizing process conditions for manufacturing each structure.

For example, when high-temperature heat treatment is performed for the purpose of improving the luminance of the light-emitting layer 14, a high-temperature heat treatment is performed using a quartz substrate, a ceramic substrate, or the like that can withstand the heating temperature as the first substrate 11 provided with the light-emitting layer 14. An inexpensive and highly light-transmissive glass substrate can be used for the second substrate 17 that is not present. In other words, a substrate having lower heat resistance than the first substrate 11 can be used as the second substrate 17.

In addition, by mixing a high dielectric material in the adhesive resin, the adhesive layer 15 can also function as a dielectric layer, so that the film forming process by vacuum deposition can be reduced and the process can be simplified.

(Embodiment 2)
Another structure example of a light-emitting element manufactured using the present invention will be described with reference to FIGS.

Note that a light-emitting material that can be used in the light-emitting layer of the present invention includes a base material and an impurity element that serves as a light emission center. By changing the impurity element, luminescence of various emission colors can be obtained. As a method for manufacturing the light emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

In the solid phase method, the base material and the impurity element are weighed, mixed in a mortar, heated and fired in an electric furnace, and reacted to cause the base material to contain the impurity element. The firing temperature is preferably 700 to 1500 ° C. This is because the solid reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material and an impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, the particle size is small, and the reaction can proceed even at a low firing temperature.

As a base material that can be used in the present invention, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), or the like can be used. Furthermore, zinc selenide (ZnSe), zinc telluride (ZnTe), and the like can also be used, and calcium sulfide-gallium sulfide (CaGa ₂ S ₄ ), strontium sulfide-gallium sulfide (SrGa ₂ S ₄ ), barium sulfide-gallium (BaGa). _It may be a ternary mixed crystal such as ₂ S ₄ ).

In the present invention, the impurity element in the light emitting material includes at least two kinds of materials. For example, copper (Cu), silver (Ag), gold (Au), platinum (Pt), silicon (Si), or the like can be used as the first impurity element. Examples of the second impurity element include fluorine (F), chlorine (Cl), bromine (Br), iodine (I), boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium. (Tl) or the like can be used.

The above-described materials can be used as a base material, and a light-emitting material composed only of the first impurity element and the second impurity element can be used as a light emission center. These are luminescence due to donor-acceptor recombination.

Two kinds of materials may be included using the first impurity element and the third impurity element as impurity elements in the light emitting material. Examples of the third impurity element include lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), nitrogen (N), phosphorus (P), arsenic (As), and antimony. (Sb), bismuth (Bi), or the like can be used.

In addition to the first impurity element and the second impurity element as the impurity element in the light emitting material, a third impurity element may be used to include three kinds of materials. The concentration of these impurities may be 0.01 to 10 mol%, preferably 0.1 to 5 mol%, based on the base material.

In addition, as the impurity element in the case of using the solid phase reaction, a combination of the first impurity element and the second impurity element, or a compound composed of the second impurity element and the third impurity element may be used. . In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. Examples of the compound composed of the first impurity element and the second impurity element include copper fluoride (CuF ₂ ), copper chloride (CuCl), copper iodide (CuI), copper bromide (CuBr), and nitride Copper (Cu ₃ N), copper phosphide (Cu ₃ P), silver fluoride (AgF), silver chloride (AgCl), silver iodide (AgI), silver bromide (AgBr), gold chloride (AuCl ₃ ), Gold bromide (AuBr ₃ ), platinum chloride (PtCl ₂ ), or the like can be used. Examples of the compound composed of the second impurity element and the third impurity element include lithium fluoride (LiF), lithium chloride (LiCl), lithium iodide (LiI), copper bromide (LiBr), Alkali halides such as sodium chloride (NaCl), boron nitride (BN), aluminum nitride (AlN), aluminum antimonide (AlSb), gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP) Indium arsenide (InAs), indium antimonide (InSb), or the like can be used.

The light-emitting material thus obtained can emit light by recombination of donor-acceptor pairs, and becomes a light-emitting material with high electrical conductivity. A light-emitting layer using a light-emitting material containing three kinds of materials can emit light without requiring hot electrons accelerated by a high electric field. That is, since it is not necessary to apply a high voltage to the light emitting element, a light emitting element that can operate with a low driving voltage can be obtained. In addition, since light can be emitted with a low driving voltage, a light-emitting element with reduced power consumption can be obtained.

Furthermore, as a light emitting material that does not depend on donor-acceptor recombination, for example, the above-described material is used as a base material, and manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), Erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr), or the like can be used. Light emission by these light emitting materials utilizes inner-shell electronic transition of metal ions. Note that not only a simple metal but also a halogen element such as fluorine (F) or chlorine (Cl) may be added to these light emitting materials for charge compensation.

The light-emitting layers (the light-emitting layers 14 and 24) described in Embodiment 1 and this embodiment are layers containing the above-described light-emitting materials, and are vacuum deposition methods such as a resistance heating vapor deposition method and an electron beam vapor deposition (EB vapor deposition) method. It can be formed by physical vapor deposition (PVD) such as sputtering, metal organic chemical vapor deposition (CVD), chemical vapor deposition (CVD) such as hydride transport low pressure CVD, atomic layer epitaxy (ALE), or the like. it can.

The dielectric layers (dielectric layers 13 and 23a, 23b) described in the first embodiment and the present embodiment are not particularly limited, but preferably have a high withstand voltage and a dense film quality. Furthermore, it is preferable that the dielectric constant is high. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTiO ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., a mixed film thereof, or two or more kinds thereof A laminated film can be used. These dielectric layers can be formed by sputtering, vapor deposition, CVD, or the like.

A structure 28a in FIG. 2A includes a first substrate 21, a first electrode 22, a first dielectric layer 23a, a light emitting layer 24, and a second dielectric layer 23b. Adhesive resin is deposited on the second dielectric layer 23b of the structure 28a to form the adhesive layer 25.

Here, a dropping method will be described with reference to FIG. FIG. 10 shows one embodiment of an adhesive resin dropping apparatus applicable to the present invention, in which 80 is a dropping control circuit, 81 is an imaging means such as a CCD, 83 is a marker, and 82 is a head. An adhesive resin is dropped onto the substrate 84 from the nozzle of the dropping head 82 by the dropping control circuit 80. A frame body 86 is formed on the substrate 84 to determine the region of the composition 85 containing the liquid adhesive resin. A composition 85 containing a liquid adhesive resin is dropped into a region surrounded by the frame 86 to form an adhesive layer.

Further, a structure 29 a having the second electrode 26 and the second substrate 27 is prepared separately, and the second electrode 26 and the adhesive layer 25 are brought into contact with each other. After the contact, according to the type of the adhesive resin, the adhesive resin is cured by means such as ultraviolet irradiation or heating.

Through the above steps, the light-emitting element illustrated in FIG. 2A can be manufactured.

In addition, as shown in FIG. 2B, the first substrate 21, the first electrode 22, the first dielectric layer 23a, the structure 28b having the light emitting layer 24, the second dielectric layer 23b, It is also possible to adhere the structure 29 b having the two electrodes 26 and the second substrate 27 with the adhesive layer 25.

As described above, by using the present invention, the structure 28a and the structure 29a and the structure 28b and the structure 29b can be manufactured by completely different processes. Therefore, a display device with higher quality can be manufactured by optimizing the process for manufacturing each structure.

(Embodiment 3)
A light-emitting element that can be manufactured using the present invention will be described with reference to FIGS. Note that in this embodiment, a method for manufacturing a dispersion-type inorganic EL element is described.

A structure 30 in FIG. 3A includes a first substrate 31 and a first electrode 32.

A light emitting material 33 dispersed in an adhesive resin 34 is attached onto the first electrode 32 of the structure 30 to produce an adhesive layer 40a.

Note that the light-emitting material 33 used here is obtained by processing the light-emitting material shown in Embodiment Mode 2 into particles. The processing into particles may be pulverized with a mortar or the like, or may be performed using an apparatus such as a pulverizer. When particles having a desired size are sufficiently obtained by the method for manufacturing a light emitting material, no further processing is necessary. The particle size may be 0.1 μm or more and 50 μm or less (more preferably 10 μm or less). The shape of the luminescent material may be any shape such as granular, columnar, needle-like, or plate-like, and a plurality of luminescent material particles may aggregate to form an aggregate as a single body.

Further, a structure 39 having the second electrode 35 and the second substrate 36 is prepared separately, and the second electrode 35 and the adhesive layer 40a are brought into contact with each other. After the contact, according to the type of the adhesive resin, the adhesive resin is cured by means such as ultraviolet irradiation or heating.

Through the above steps, the light-emitting element illustrated in FIG. 3A can be manufactured. By using this method, the adhesive layer can have a function as a light emitting layer, and the process can be simplified.

In addition, as shown in FIG. 3B, a material in which the light emitting material 33 is dispersed in a material 38 in which an adhesive resin and a high dielectric material are mixed can be used as the adhesive layer 40b.

Here, an organic material or an inorganic material can be used as the high dielectric material, and a mixed material of an organic material and an inorganic material may be used. As the organic material, a polymer having a high polarity and a high dielectric constant such as cyanoethyl cellulose resin is preferable, and as the inorganic material, fine particles having a high dielectric constant such as barium titanate (BaTiO ₃ ) and strontium titanate (SrTiO ₃ ). Should be used.

Further, as shown in FIG. 3C, the light emitting material 33 is dispersed in a binder 37 made of a mixture of a high dielectric constant material and a solvent, and is deposited on the first electrode 32 and dried to produce the light emitting layer 40c. Then, an adhesive resin 34 is attached on the light emitting layer 40c to form an adhesive layer, and the adhesive layer and the second electrode 35 are brought into contact with each other to cure the adhesive layer, whereby a light emitting element can be manufactured.

Here, as a binder that can be used in the present invention, an organic material or an inorganic material can be used, and a mixed material of an organic material and an inorganic material may be used. As the organic material, a polymer having a relatively high dielectric constant such as a cyanoethyl cellulose resin, or a resin such as polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aryl group) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. In addition, a photosensitive resin can be used. For example, a photosensitive resin having photocurability can be used. The dielectric constant can be adjusted by appropriately mixing fine particles having a high dielectric constant such as BaTiO ₃ or SrTiO _{3 with} these resins.

Examples of the inorganic material contained in the binder include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum nitride (AlN), aluminum oxynitride (AlON), aluminum nitride oxide (AlNO), aluminum oxide, and titanium oxide (TiO2). ₂ ), BaTiO ₃ , SrTiO ₃ , PbTiO ₃ , KNbO ₃ , PbNbO ₃ , Ta ₂ O ₃ , BaTa ₂ O ₆ , LiTaO ₃ , Y ₂ O ₃ , Al ₂ O ₃ , ZrO ₂ , ZnS, other inorganic insulation It can be formed of a material selected from substances including a conductive material. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the light emitting layer made of the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased.

As a solvent that can be used for the binder of the present invention, a method for forming a light emitting layer by dissolving the binder material (various wet processes) and a solvent that can produce a solution having a viscosity suitable for a desired film thickness are appropriately selected. do it. For example, when a siloxane resin is used as a binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB) can be used. Etc. can be used.

By using the present invention, a substrate that is subjected to high temperature treatment and a substrate that is not subjected to high temperature treatment can be separately manufactured, and finally, an integrated display device of this embodiment can be manufactured. Therefore, a high-brightness inorganic EL display device that can be driven over a glass substrate that cannot be subjected to high-temperature treatment can be manufactured.

In the present invention, since the first substrate and the second substrate can be processed separately, the number of options for the device manufacturing method is increased, leading to improvement in productivity. In addition, by dispersing a light emitting material, a high dielectric material, and a conductive material in the adhesive layer, functions other than adhesion can be provided, and the process can be simplified.

(Embodiment 4)
In this embodiment, an example of a structure of a display device including the light-emitting element of the present invention will be described with reference to drawings. More specifically, the case where the structure of the display device is a passive matrix type will be described.

Note that there is a difference in structure between the thin-film type inorganic EL and the dispersion-type inorganic EL, but both are the same in that they emit electroluminescence, and therefore, a portion related to these light emission mechanisms is an electroluminescent layer. This electroluminescent layer is composed of, for example, a light emitting layer and a dielectric layer in the case of a thin-film inorganic EL, and in the case of a dispersed inorganic EL, a light emission formed by firing a material in which a particulate light emitting material is dispersed in a binder. A layer and a dielectric layer.

4A is a top view of the display device, and FIG. 4B is a cross-sectional view taken along line AB in FIG. 4A. In FIG. 4A, the second substrate 755 is omitted and not shown, but is provided as shown in FIG. 4B.

4A and 4B, the display device includes a first substrate 750, a first electrode layer 751a extending in the first direction, a first electrode layer 751b, a first electrode layer 751c, The first electrode layer 751a, the first electrode layer 751b, the adhesive layer 752 provided to cover the first electrode layer 751c, the electroluminescent layer 753, and the second extending in the second direction perpendicular to the first direction. The electrode layer 754a, the second electrode layer 754b, the second electrode layer 754c, and the second substrate 755. The adhesive layer 752 and the electric field are provided between the first electrode layer 751a, the first electrode layer 751b, the first electrode layer 751c and the second electrode layer 754a, the second electrode layer 754b, and the second electrode layer 754c. A light emitting layer 753 is provided. The electroluminescent layer 753, the second electrode layer 754a, the second electrode layer 754b, and the second electrode layer 754c are formed over the second substrate, and the electrode layer side of the first substrate is formed by the adhesive layer 752. And the electroluminescent layer side of the second substrate are bonded. Note that in the case where there is a concern about the influence of a horizontal electric field between adjacent memory cells, the electroluminescent layer 753 provided in each light-emitting element may be separated.

FIG. 4C is a modification example of FIG. 4B, in which the first substrate 750, the first electrode layer 751a, the first electrode layer 751b, the first electrode layer 751c, the adhesive layer 752, the electric field The light-emitting layer 753, the second electrode layer 754 a, the second electrode layer 754 b, the second electrode layer 754 c, and the second substrate 755 are included. As in the first electrode layer 751a, the first electrode layer 751b, and the first electrode layer 751c in FIG. 4C, the first electrode layer may have a tapered shape, and the curvature radius is continuous. The shape may change. Shapes such as the first electrode layer 751a, the first electrode layer 751b, and the first electrode layer 751c can be formed by a droplet discharge method or the like. When the curved surface has such a curvature, an effect of preventing a short circuit due to electric field concentration at the electrode corner can be obtained.

Further, as shown in FIGS. 5A and 5B, a partition wall (insulating layer) may be formed so as to cover an end portion of the first electrode layer. The partition (insulating layer) functions like a wall separating other memory elements. FIGS. 5A and 5B are the same as the structures shown in FIGS. 4B and 4C except that the end portion of the first electrode layer is covered with a partition wall (insulating layer). A top view corresponding to the cross-sectional views shown in FIGS. 5A and 5B is FIG.

In the example of the light-emitting element illustrated in FIG. 5A, a partition (insulating layer) 776 serving as a partition covers an end portion of the first electrode layer 751a, the first electrode layer 751b, and the first electrode layer 751c. It is formed in a shape having a taper. A partition wall (insulating layer) 776 is formed on end portions of the first electrode layer 751a, the first electrode layer 751b, and the first electrode layer 751c provided over the first substrate 750, and the first electrode layer 751a, the first electrode layer 751b, and the first electrode layer 751c are attached with an adhesive resin to form a first adhesive layer 772a, a first adhesive layer 772b, and a first adhesive layer 772c. A second layer 753, a second electrode layer 754a (shown in FIG. 4A), a second electrode layer 754b, and a second electrode layer 754c (shown in FIG. 4A). It is produced by contacting the second substrate 755 and curing the adhesive resin.

FIG. 5B is a modification example of FIG. 5A, in which the partition wall (insulating layer) 776 of the light-emitting element has a curvature, and the radius of curvature continuously changes. A partition wall (insulating layer) 776 is formed on end portions of the first electrode layer 751a, the first electrode layer 751b, and the first electrode layer 751c provided over the first substrate 750, and the first electrode layer 751a, first electrode layer 751b, and first electrode layer 751c are attached with an adhesive resin to form a first adhesive layer 752, an electroluminescent layer 753, and a second electrode layer 754a (shown in FIG. 4A). In contact with a second substrate 755 having a second electrode layer 754b and a second electrode layer 754c (shown in FIG. 4A) and curing the adhesive resin. The

Moreover, the partition may have a reverse taper shape in which the outer end of the top portion protrudes outward with respect to the bottom portion.

As the first substrate 750 and the second substrate 755, a quartz substrate, a silicon substrate, a metal substrate, a stainless steel substrate, or the like can be used in addition to a glass substrate or a flexible substrate. The flexible substrate is a substrate that can be bent (flexible), and examples thereof include a plastic substrate made of polycarbonate, polyarylate, polyethersulfone, or the like. It is also possible to use films (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.), paper made of fibrous materials, substrate films (polyester, polyamide, inorganic vapor deposition film, papers, etc.), etc. it can. In addition, a light-emitting element can be provided above a field effect transistor (FET) formed on a semiconductor substrate such as Si or above a thin film transistor (TFT) formed on a substrate such as glass. .

The materials and formation methods of the first electrode layer, the second electrode layer, the light emitting material, the light emitting layer, and the adhesive layer described in this embodiment mode are any of the materials and formation methods described in Embodiment Modes 1 to 3 above. It can carry out similarly using these.

By using the present invention, a substrate that is subjected to high temperature treatment and a substrate that is not subjected to high temperature treatment can be separately manufactured, and finally, an integrated display device of this embodiment can be manufactured. Therefore, a high-brightness inorganic EL display device that can be driven over a glass substrate that cannot be subjected to high-temperature treatment can be manufactured.

In the present invention, since the first substrate and the second substrate can be processed separately, the number of options for the device manufacturing method is increased, leading to improvement in productivity. In addition, by dispersing a light emitting material, a high dielectric material, and a conductive material in the adhesive layer, functions other than adhesion can be provided, and the process can be simplified.

(Embodiment 5)
In this embodiment mode, a display device having a structure different from that of Embodiment Mode 4 will be described. Specifically, the case where the structure of the display device is an active matrix type is described.

6A is a top view of the display device, and FIG. 6B is a cross-sectional view taken along line EF in FIG. 6A. In FIG. 6A, the electroluminescent layer 312, the second electrode layer 313, and the second substrate 314 are omitted and not shown, but are provided as shown in FIG. 6B. .

A first wiring extending in the first direction and a second wiring extending in a second direction perpendicular to the first direction are provided in a matrix. The first wiring is connected to the source electrode or the drain electrode of the transistors 310a and 310b, and the second wiring is connected to the gate electrodes of the transistors 310a and 310b. Further, the first electrode layer 306a and the first electrode layer 306b are connected to the source electrode or the drain electrode of the transistor 310a and the transistor 310b which are not connected to the first wiring, respectively. An adhesive layer 316a and an adhesive layer 316b are formed over the first electrode layer 306a and the first electrode layer 306b, and are bonded to the second substrate 314 including the electroluminescent layer 312 and the second electrode layer 313. A light emitting element 315a and a light emitting element 315b are formed. A partition wall (insulating layer) 307 is provided between each adjacent light emitting element, and a space is provided on the partition wall 307 to prevent the partition wall 307 and the electroluminescent layer 312 from being in direct contact with each other. Thin film transistors are used as the transistors 310a and 310b (see FIG. 6B).

6B is provided over a substrate 300, and includes an insulating layer 301a, an insulating layer 301b, an insulating layer 308, an insulating layer 309, an insulating layer 311, a semiconductor layer 304a included in the transistor 310a, and a gate electrode layer. 302a includes a wiring 305a also serving as a source electrode layer or a drain electrode layer, a semiconductor layer 304b included in the transistor 310b, and a gate electrode layer 302b. An adhesive layer 316a and an adhesive layer 316b are formed over the first electrode layer 306a and the first electrode layer 306b, and are in contact with the second substrate 314 including the electroluminescent layer 312 and the second electrode layer 313, so that the light emitting element Is forming.

Note that in the case where it is desired to pass a direct current through the electroluminescent layer 312, a conductive material can be mixed into the adhesive resin so that the adhesive layer 316a and the adhesive layer 316b have conductivity. The conductive material may be an organic material such as a conductive polymer or an inorganic material such as metal fine particles. For example, metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd and Zn, oxides such as Fe, Ti, Si, Ge, Zr, and Ba, halogen Silver fine particles or dispersible nanoparticles can be used.

As illustrated in FIG. 11, a light-emitting element 365a and a light-emitting element 365b may be connected to the field-effect transistor 360a and the field-effect transistor 360b provided over the single crystal semiconductor substrate 350. Here, an insulating layer 370 is provided so as to cover the source or drain electrode layers 355a to 355d of the field effect transistor 360a and the field effect transistor 360b, and the first electrode layer 356a and the first electrode layer are provided over the insulating layer 370. A partition wall (insulating layer) 367 is formed, and a light-emitting element 365a and a light-emitting element 365b are formed by the adhesive layer 371, the electroluminescent layer 362a, the electroluminescent layer 362b, and the second electrode layer 363 thereon. An electroluminescent layer such as the electroluminescent layer 362a and the electroluminescent layer 362b may be selectively provided only for each light emitting element using a mask or the like. In addition, the display device illustrated in FIG. 11 also includes an element isolation region 368, an insulating layer 369, an insulating layer 361, and a second substrate 364. An adhesive layer 371 is formed over the first electrode layer 356a, the first electrode layer 356b, and the partition wall 367, and the second substrate includes the electroluminescent layer 362a, the electroluminescent layer 362b, and the second electrode layer 363. 364 is bonded.

Note that the adhesive layer can be selectively formed only on a portion of each light-emitting element as shown in FIG. 6B, or can be continuously formed without dividing the light-emitting elements as shown in FIG. . In the case of manufacturing as shown in FIG. 6B, a droplet discharge method, a screen printing method, a dispensing method, or the like is preferably used.

In the display device manufactured using the present invention, the first substrate 350 and the second substrate 364 can be manufactured through completely different processes; therefore, a high-quality display device can be obtained by optimizing each process. It can be produced.

As shown in FIG. 11, the first electrode layer can be freely disposed by providing the insulating layer 370 to form a light-emitting element. That is, in the structure in FIG. 6B, the light-emitting element 315a and the light-emitting element 315b need to be provided in a region where the source electrode layer and the drain electrode layer of the transistor 310a and the transistor 310b are avoided. For example, the light-emitting element 315a and the light-emitting element 315b can be formed above the transistors 310a and 310b. As a result, a display device manufactured using the present invention can be more highly integrated.

The transistors 310a and 310b may have any structure as long as they can function as switching elements. As the semiconductor layer, various semiconductors such as an amorphous semiconductor, a crystalline semiconductor, a polycrystalline semiconductor, and a microcrystalline semiconductor can be used, and an organic transistor may be formed using an organic compound. FIG. 6A illustrates an example in which a planar thin film transistor is provided over an insulating substrate; however, a transistor can be formed with a staggered structure, an inverted staggered structure, or the like.

By using the present invention, a substrate that is subjected to high temperature treatment and a substrate that is not subjected to high temperature treatment can be separately manufactured, and finally, an integrated display device of this embodiment can be manufactured. Therefore, a high-brightness inorganic EL display device that can be driven over a glass substrate that cannot be subjected to high-temperature treatment can be manufactured.

In the present invention, since the first substrate and the second substrate can be processed separately, the number of options for the device manufacturing method is increased, leading to improvement in productivity. In addition, by dispersing a light emitting material, a high dielectric material, and a conductive material in the adhesive layer, functions other than adhesion can be provided, and the process can be simplified.

(Embodiment 6)
A method for manufacturing the display device in this embodiment will be described in detail with reference to FIGS. 7, 8, 16, and 17.

FIG. 16A is a top view illustrating a structure of a display panel according to the present invention. A pixel portion 2701 in which pixels 2702 are arranged in a matrix over a substrate 2700 having an insulating surface, a scan line side input terminal 2703, a signal A line side input terminal 2704 is formed. The number of pixels may be provided in accordance with various standards. For full color display using XGA and RGB, 1024 × 768 × 3 (RGB), and for full color display using UXGA and RGB, 1600 × 1200. If it corresponds to x3 (RGB) and full spec high vision and is full color display using RGB, it may be set to 1920 x 1080 x 3 (RGB).

The pixels 2702 are arranged in a matrix by a scan line extending from the scan line side input terminal 2703 and a signal line extending from the signal line side input terminal 2704 intersecting. Each of the pixels 2702 includes a switching element and a pixel electrode layer connected to the switching element. A typical example of a switching element is a TFT. By connecting the gate electrode layer side of the TFT to a scanning line and the source or drain side to a signal line, each pixel can be controlled independently by a signal input from the outside. It is said.

FIG. 16A illustrates a structure of a display panel in which signals input to the scan lines and the signal lines are controlled by an external driver circuit. As illustrated in FIG. 17A, COG (Chip on The driver IC 2751 may be mounted on the substrate 2700 by a glass method. As another mounting mode, a TAB (Tape Automated Bonding) method as shown in FIG. 17B may be used. The driver IC may be formed on a single crystal semiconductor substrate or may be a circuit in which a TFT is formed on a glass substrate. In FIG. 17, the driver IC 2751 is connected to an FPC (Flexible printed circuit) 2750.

In the case where the TFT provided for the pixel is formed using a crystalline semiconductor, the scan line driver circuit 3702 can be formed over the substrate 3700 as shown in FIG. In FIG. 16B, the pixel portion 3701 is controlled by an external driver circuit as in FIG. 16A connected to the signal line side input terminal 3704. In the case where a TFT provided for a pixel is formed using a polycrystalline (microcrystalline) semiconductor, a single crystal semiconductor, or the like with high mobility, FIG. 16C illustrates a pixel portion 4701, a scan line driver circuit 4702, and a signal line driver circuit. 4704 can be integrally formed on the substrate 4700.

In FIG. 7, a CVD method (Chemical Vapor Deposition) such as a sputtering method, a PVD method (Physical Vapor Deposition), a low pressure CVD method (LPCVD method), or a plasma CVD method is used as a base film on the first substrate 100 having an insulating surface. ) Or the like is used to form a base film 101a with a silicon nitride oxide film of 10 to 200 nm (preferably 50 to 150 nm), and a silicon oxynitride film is used to stack a base film 101b with a thickness of 50 to 200 nm (preferably 100 to 150 nm). . Alternatively, heat-resistant polymers such as acrylic acid, methacrylic acid and derivatives thereof, polyimide, aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, epoxy resins, phenol resins, novolac resins, acrylic resins, melamine resins, and urethane resins may be used. Further, an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, polyimide, a composition material containing a water-soluble homopolymer and a water-soluble copolymer, or the like may be used. Moreover, an oxazole resin can also be used, for example, photocurable polybenzoxazole or the like can be used.

Further, a droplet discharge method, a printing method (a method for forming a pattern such as screen printing or offset printing), a coating method such as a spin coating method, a dipping method, a dispenser method, or the like can also be used. In this embodiment, the base film 101a and the base film 101b are formed by a plasma CVD method. As the first substrate 100, a glass substrate, a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate such as a film may be used. As the plastic substrate, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and PES (polyethersulfone) can be used, and as the flexible substrate, a synthetic resin such as acrylic can be used. Since the display device manufactured in this embodiment has a structure in which light from the light-emitting element is extracted through the first substrate 100, the first substrate 100 needs to have a light-transmitting property.

As the base film, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, or the like can be used, and a single layer or a laminated structure of two layers or three layers may be used.

Next, a semiconductor film is formed over the base film. The semiconductor film may be formed by various means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) with a thickness of 25 to 200 nm (preferably 30 to 150 nm). In this embodiment mode, it is preferable to use a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film by laser crystallization.

As a material for forming the semiconductor film, an amorphous semiconductor (hereinafter also referred to as “amorphous semiconductor: AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane is used. A polycrystalline semiconductor obtained by crystallizing a crystalline semiconductor using light energy or thermal energy, or a semi-amorphous (also referred to as microcrystal or microcrystal; hereinafter, also referred to as “SAS”) semiconductor can be used.

SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. SAS is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. As a gas containing silicon, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _4, or the like can be used. Further, F ₂ and GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained. In addition, a SAS layer formed of a hydrogen-based gas may be stacked on a SAS layer formed of a fluorine-based gas as a semiconductor film.

A typical example of an amorphous semiconductor is hydrogenated amorphous silicon, and a typical example of a crystalline semiconductor is polysilicon. Polysilicon (polycrystalline silicon) is mainly made of so-called high-temperature polysilicon using polysilicon formed through a process temperature of 800 ° C. or higher as a main material, or polysilicon formed at a process temperature of 600 ° C. or lower. And so-called low-temperature polysilicon, and polysilicon crystallized by adding an element that promotes crystallization. Needless to say, as described above, a semi-amorphous semiconductor or a semiconductor containing a crystal phase in part of a semiconductor film can also be used.

In the case where a crystalline semiconductor film is used as the semiconductor film, a method for manufacturing the crystalline semiconductor film can be a known method (laser crystallization method, thermal crystallization method, or heat using an element that promotes crystallization such as nickel. A crystallization method or the like may be used. In addition, a microcrystalline semiconductor that is a SAS can be crystallized by laser irradiation to improve crystallinity. In the case where an element for promoting crystallization is not introduced, the concentration of hydrogen contained in the amorphous semiconductor film is set to 1 × by heating at 500 ° C. for 1 hour in a nitrogen atmosphere before irradiating the amorphous semiconductor film with laser light. Release to 10 ²⁰ atoms / cm ³ or less. This is because when an amorphous semiconductor film containing a large amount of hydrogen is irradiated with laser light, the amorphous semiconductor film is destroyed. As the heat treatment for crystallization, a heating furnace, laser irradiation, irradiation with light emitted from a lamp (also referred to as lamp annealing), or the like can be used. There are RTA methods such as a GRTA (Gas Rapid Thermal Anneal) method and an LRTA (Lamp Rapid Thermal Anneal) method as heating methods. GRTA is a method for performing heat treatment using a high-temperature gas, and LRTA is a method for performing heat treatment with lamp light.

Further, in the crystallization step of crystallizing the amorphous semiconductor layer to form the crystalline semiconductor layer, an element for promoting crystallization (also referred to as a catalyst element or a metal element) is added to the amorphous semiconductor layer, and heat treatment ( Crystallization may be carried out at 550 ° C. to 750 ° C. for 3 minutes to 24 hours. As elements that promote crystallization, iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), platinum One or more types selected from (Pt), copper (Cu), and gold (Au) can be used.

The method of introducing the metal element into the amorphous semiconductor film is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor film or inside the amorphous semiconductor film. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and to spread the aqueous solution over the entire surface of the amorphous semiconductor film, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

In order to remove or reduce the element that promotes crystallization from the crystalline semiconductor layer, a semiconductor layer containing an impurity element is formed in contact with the crystalline semiconductor layer and functions as a gettering sink. As the impurity element, an impurity element imparting n-type conductivity, an impurity element imparting p-type conductivity, a rare gas element, or the like can be used. For example, phosphorus (P), nitrogen (N), arsenic (As), antimony (Sb ), Bismuth (Bi), boron (B), helium (He), neon (Ne), argon (Ar), Kr (krypton), and Xe (xenon) can be used. A semiconductor layer containing a rare gas element is formed over the crystalline semiconductor layer containing an element that promotes crystallization, and heat treatment (at 550 ° C. to 750 ° C. for 3 minutes to 24 hours) is performed. The element that promotes crystallization contained in the crystalline semiconductor layer moves into the semiconductor layer containing a rare gas element, and the element that promotes crystallization in the crystalline semiconductor layer is removed or reduced. After that, the semiconductor layer containing a rare gas element that has become a gettering sink is removed.

Laser irradiation can be performed by relatively scanning the laser and the semiconductor film. In laser irradiation, a marker can be formed by superimposing beams with high accuracy or by controlling the laser irradiation start position and laser irradiation end position. The marker may be formed on the substrate simultaneously with the amorphous semiconductor film.

When laser irradiation is used, a continuous wave laser beam (CW (continuous-wave) laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as an Ar laser, a Kr laser, or an excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants A laser oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonic laser beams of these fundamental waves, a crystal having a large grain size can be obtained. For example, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. This laser can be emitted by CW or pulsed oscillation. When injected at a CW, the power density 0.01 to 100 MW / cm ² of about laser (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta, a laser using a medium added with one or more, an Ar ion laser, or a Ti: sapphire laser should be continuously oscillated. It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation or mode synchronization. When the laser beam is oscillated at an oscillation frequency of 10 MHz or more, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

When ceramic (polycrystal) is used as the medium, it is possible to form the medium in a free shape in a short time and at low cost. When a single crystal is used, a cylindrical medium having a diameter of several millimeters and a length of several tens of millimeters is usually used. However, when ceramic is used, a larger one can be made.

Since the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission cannot be changed greatly regardless of whether it is a single crystal or a polycrystal, there is a certain limit to improving the laser output by increasing the concentration. However, in the case of ceramic, since the size of the medium can be remarkably increased as compared with the single crystal, a great improvement in output can be obtained.

Further, in the case of ceramic, a medium having a parallelepiped shape or a rectangular parallelepiped shape can be easily formed. When a medium having such a shape is used to cause oscillation light to travel in a zigzag manner inside the medium, the oscillation optical path can be made longer. As a result, amplification is increased and oscillation can be performed with high output. Further, since the laser beam emitted from the medium having such a shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser beam using an optical system, it is possible to easily obtain a linear beam having a short side length of 1 mm or less and a long side length of several mm to several m. Become. In addition, by irradiating the medium with the excitation light uniformly, the linear beam has a uniform energy distribution in the long side direction. Further, the laser may be irradiated with an incident angle θ (0 <θ <90 degrees) with respect to the semiconductor film. This is because laser interference can be prevented.

By irradiating the semiconductor film with this linear beam, the entire surface of the semiconductor film can be annealed more uniformly. When uniform annealing is required up to both ends of the linear beam, it is necessary to arrange a slit at both ends to shield the energy attenuating portion.

When a semiconductor film is annealed using a linear beam with uniform intensity obtained in this way and a display device is manufactured using this semiconductor film, the characteristics of the display device are good and uniform.

Further, laser light may be irradiated in an inert gas atmosphere such as a rare gas or nitrogen. Accordingly, the surface roughness of the semiconductor can be suppressed by laser light irradiation, and variations in threshold values caused by variations in interface state density can be suppressed.

Crystallization of the amorphous semiconductor film may be a combination of heat treatment and crystallization by laser light irradiation, or may be performed multiple times by heat treatment or laser light irradiation alone.

In this embodiment, an amorphous semiconductor film is formed over the base film 101b, and the crystalline semiconductor film is formed by crystallizing the amorphous semiconductor film.

After removing the oxide film formed on the amorphous semiconductor film, the oxide film is formed to 1 nm by irradiation with UV light in an oxygen atmosphere, thermal oxidation, treatment with ozone water containing hydrogen radicals or hydrogen peroxide, and the like. Form ~ 5 nm. In this embodiment mode, Ni is used as an element for promoting crystallization. An aqueous solution containing 10 ppm of Ni acetate is applied by spin coating.

In this embodiment mode, heat treatment is performed at 750 ° C. for 3 minutes by an RTA method, and then an oxide film formed over the semiconductor film is removed and laser light is irradiated. The amorphous semiconductor film is crystallized by the above crystallization treatment and formed as a crystalline semiconductor film.

When crystallization using a metal element is performed, a gettering step is performed in order to reduce or remove the metal element. In this embodiment mode, a metal element is captured using an amorphous semiconductor film as a gettering sink. First, an oxide film is formed over the crystalline semiconductor film by irradiation with UV light in an oxygen atmosphere, a thermal oxidation method, treatment with ozone water containing hydroxyl radicals or hydrogen peroxide, and the like. The oxide film is preferably thickened by heat treatment. Next, an amorphous semiconductor film is formed to a thickness of 50 nm by a plasma CVD method (conditions 350 W and 35 Pa in this embodiment mode, a deposition gas SiH ₄ (flow rate 5 sccm), Ar (flow rate 1000 sccm)).

Thereafter, heat treatment is performed at 744 ° C. for 3 minutes by the RTA method to reduce or remove the metal element. The heat treatment may be performed in a nitrogen atmosphere. Then, the amorphous semiconductor film that has been a gettering sink and the oxide film formed on the amorphous semiconductor film are removed with hydrofluoric acid or the like, and the crystalline semiconductor film in which the metal element is reduced or removed is obtained. Obtainable. In this embodiment mode, the amorphous semiconductor film serving as a gettering sink is removed using TMAH (Tetramethyl ammonium hydroxide).

In order to control the threshold voltage of the thin film transistor, the semiconductor film thus obtained may be doped with a trace amount of impurity element (boron or phosphorus). This doping of the impurity element may be performed on the amorphous semiconductor film before the crystallization step. When the impurity element is doped in the state of the amorphous semiconductor film, the impurity can be activated by heat treatment for subsequent crystallization. In addition, defects and the like generated during doping can be improved.

Next, the crystalline semiconductor film is etched into a desired shape to form a semiconductor layer.

As the etching process, either plasma etching (dry etching) or wet etching may be employed, but plasma etching is suitable for processing a large area substrate. As an etching gas, a fluorine-based gas such as CF ₄ or NF ₃ or a chlorine-based gas such as Cl ₂ or BCl ₃ may be used, and an inert gas such as He or Ar may be appropriately added. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

In the present invention, a conductive layer for forming a wiring layer or an electrode layer, a mask layer for forming a predetermined pattern, or the like may be formed by a method capable of selectively forming a pattern such as a droplet discharge method. . A droplet discharge (ejection) method (also called an ink-jet method depending on the method) is a method in which a droplet of a composition prepared for a specific purpose is selectively ejected (ejection) to form a predetermined pattern (such as a conductive layer or a conductive layer). An insulating layer or the like can be formed. At this time, a process for controlling wettability and adhesion may be performed on the formation region. In addition, a method by which a pattern can be transferred or drawn, for example, a printing method (a method for forming a pattern such as screen printing or offset printing), a dispenser method, or the like can also be used.

In this embodiment mode, a resin material such as an epoxy resin, an acrylic resin, a phenol resin, a novolac resin, a melamine resin, or a urethane resin is used as a mask to be used. In addition, a composition comprising an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, translucent polyimide, a compound material obtained by polymerization of a siloxane polymer, a water-soluble homopolymer and a water-soluble copolymer A material or the like can also be used. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like may be used. When using the droplet discharge method, regardless of which material is used, the surface tension and viscosity are adjusted as appropriate by adjusting the concentration of the solvent or adding a surfactant or the like.

A gate insulating layer 107 is formed to cover the semiconductor layer. The gate insulating layer is formed of an insulating film containing silicon with a thickness of 10 to 150 nm using a plasma CVD method or a sputtering method. The gate insulating layer may be formed of a known material such as silicon nitride, silicon oxide, silicon oxynitride, or silicon oxide or nitride material typified by silicon nitride oxide, and may be a stacked layer or a single layer. Further, the insulating layer may be a three-layer stack of a silicon nitride film, a silicon oxide film, and a silicon nitride film, or a stack of a single layer and two layers of a silicon oxynitride film.

Next, a gate electrode layer is formed over the gate insulating layer 107. The gate electrode layer can be formed by a technique such as sputtering, vapor deposition, or CVD. The gate electrode layer is an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), neodymium (Nd), or What is necessary is just to form with the alloy material or compound material which has the said element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used for the gate electrode layer. The gate electrode layer may be a single layer or a stacked layer.

In this embodiment mode, the gate electrode layer is formed to have a tapered shape; however, the present invention is not limited thereto, and the gate electrode layer has a stacked structure, and only one layer has a tapered shape, and the other is anisotropic. You may have a vertical side surface by an etching. As in this embodiment, the taper angle may be different between the stacked gate electrode layers, or may be the same. By having a tapered shape, the coverage of a film stacked thereon is improved and defects are reduced, so that reliability is improved.

The gate insulating layer 107 may be slightly etched by an etching process when forming the gate electrode layer, and the film thickness may be reduced (so-called film reduction).

An impurity element is added to the semiconductor layer to form an impurity region. The impurity region can be a high concentration impurity region and a low concentration impurity region by controlling the concentration thereof. A thin film transistor having a low concentration impurity region is called an LDD (Light Doped Drain) structure. The low-concentration impurity region can be formed so as to overlap with the gate electrode. Such a thin film transistor is referred to as a GOLD (Gate Overlapped LDD) structure. The polarity of the thin film transistor is n-type by using phosphorus (P) or the like in the impurity region. When p-type is used, boron (B) or the like may be added.

In this embodiment, a region where the impurity region overlaps with the gate electrode layer through the gate insulating layer is referred to as a Lov region, and a region where the impurity region does not overlap with the gate electrode layer through the gate insulating layer is referred to as a Loff region. In FIG. 7, hatching and white background are shown in the impurity region, but this does not indicate that the impurity element is not added to the white background portion, but the concentration distribution of the impurity element in this region is mask or doping. This is because it is possible to intuitively understand that the conditions are reflected. This also applies to other drawings in this specification.

In order to activate the impurity element, heat treatment, intense light irradiation, or laser light irradiation may be performed. Simultaneously with activation, plasma damage to the gate insulating layer and plasma damage to the interface between the gate insulating layer and the semiconductor layer can be recovered.

Next, a first interlayer insulating layer is formed to cover the gate electrode layer and the gate insulating layer. In this embodiment mode, a stacked structure of the insulating film 167 and the insulating film 168 is employed. As the insulating film 167 and the insulating film 168, a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, a silicon oxide film, or the like using a sputtering method or plasma CVD can be used, and another insulating film containing silicon can be used. A single layer or a stacked structure of three or more layers may be used.

Further, a heat treatment is performed at 300 to 550 ° C. for 1 to 12 hours in a nitrogen atmosphere to perform a step of hydrogenating the semiconductor layer. Preferably, it carries out at 400-500 degreeC. This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the insulating film 167 which is an interlayer insulating layer. In this embodiment, heat treatment is performed at 410 degrees (° C.).

In addition, as the insulating films 167 and 168, aluminum nitride (AlN), aluminum oxynitride (AlON), aluminum nitride oxide (AlNO) or aluminum oxide in which the nitrogen content is higher than the oxygen content, diamond like carbon (DLC) , Nitrogen-containing carbon (CN), polysilazane, and other materials including inorganic insulating materials. Further, a material containing siloxane may be used. Further, an organic insulating material may be used, and as the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene can be used. Moreover, an oxazole resin can also be used, for example, photocurable polybenzoxazole or the like can be used.

Next, contact holes (openings) that reach the semiconductor layers are formed in the insulating film 167, the insulating film 168, and the gate insulating layer 107 using a resist mask. A conductive film is formed so as to cover the opening, and the conductive film is etched to form a source electrode layer or a drain electrode layer that is electrically connected to a part of each source region or drain region. The source electrode layer or the drain electrode layer can be formed by forming a conductive film by a PVD method, a CVD method, an evaporation method, or the like and then etching the conductive film into a desired shape. In addition, a conductive layer can be selectively formed at a predetermined place by a droplet discharge method, a printing method, a dispenser method, an electroplating method, or the like. Furthermore, a reflow method or a damascene method may be used. The material of the source electrode layer or the drain electrode layer is Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr, Ba Or a metal nitride thereof or a metal nitride thereof. Moreover, it is good also as these laminated structures.

Through the above steps, the peripheral driver circuit region 204 includes a thin film transistor 285 which is a p-channel thin film transistor having a p-type impurity region in the Lov region, and a thin film transistor 275 which is an n-channel thin film transistor having an n-channel impurity region in the Lov region. In 206, an active matrix substrate having a thin film transistor 265 which is a multi-channel n-channel thin film transistor having an n-type impurity region in a Loff region and a thin film transistor 255 which is a p-channel thin film transistor having a p-type impurity region in a Lov region is manufactured. Can do.

Without being limited to this embodiment mode, the thin film transistor may have a single gate structure in which one channel formation region is formed, a double gate structure in which two channel formation regions are formed, or a triple gate structure in which three channel formation regions are formed. The thin film transistor in the peripheral driver circuit region may have a single gate structure, a double gate structure, or a triple gate structure.

Next, an insulating film 181 is formed as a second interlayer insulating layer. In FIG. 7, a separation region 201 for separation by scribing, an external terminal connection region 202 as an FPC attachment portion, a second electrode layer 189 on a second substrate 195, and a connection wiring 210 on the first substrate. A connection region 205 that joins to each other, a wiring region 203 that is a peripheral wiring region, a peripheral driver circuit region 204, and a pixel region 206. In the connection region 205, a conductive filler 211 for electrically connecting the connection wiring 210 and the second electrode layer 189 is provided. The wiring region 203 is provided with wirings 179a and 179b, and the external terminal connection region 202 is provided with a terminal electrode layer 178 that is connected to an external terminal.

As the insulating film 181, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum nitride (AlN), aluminum oxide containing nitrogen (also referred to as aluminum oxynitride) (AlON), aluminum nitride oxide containing oxygen (nitrided oxide) Also includes aluminum (AlNO), aluminum oxide, diamond like carbon (DLC), nitrogen-containing carbon film (CN), PSG (phosphorus glass), BPSG (phosphorus boron glass), alumina film, and other inorganic insulating materials It can be formed of a material selected from substances. A siloxane resin may also be used. Further, an organic insulating material may be used, and the organic material may be either photosensitive or non-photosensitive, and polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene, polysilazane, low dielectric constant (Low− k) Materials can be used. Moreover, an oxazole resin can also be used, for example, photocurable polybenzoxazole or the like can be used. An interlayer insulating layer provided for planarization is required to have high heat resistance and high insulation and a high planarization rate. Therefore, a method for forming the insulating film 181 is represented by a spin coating method. It is preferable to use a coating method.

The insulating film 181 can be formed by other dipping methods, spray coating, doctor knife, roll coater, curtain coater, knife coater, CVD method, vapor deposition method, or the like. The insulating film 181 may be formed by a droplet discharge method. When the droplet discharge method is used, the material liquid can be saved. Further, a method capable of transferring or drawing a pattern, such as a droplet discharge method, for example, a printing method (a method for forming a pattern such as screen printing or offset printing), a dispenser method, or the like can be used.

A fine opening, that is, a contact hole is formed in the insulating film 181 in the pixel region 206.

Next, a first electrode layer 185 (also referred to as a pixel electrode layer) is formed so as to be in contact with the source electrode layer or the drain electrode layer. The first electrode layer 185 functions as an anode or a cathode and is an element selected from Ti, Ni, W, Cr, Pt, Zn, Sn, In, or Mo, or titanium nitride, TiSi _X N _Y , WSi _X , Tungsten nitride, WSi _X N _Y , NbN, or the like, a film mainly containing an alloy material or compound material containing the above elements as a main component, or a stacked film thereof may be used in a total film thickness range of 100 nm to 800 nm.

In this embodiment, a light-emitting element is used as a display element and light from the light-emitting element is extracted from the first electrode layer 185 side; thus, the first electrode layer 185 has a light-transmitting property. A transparent conductive film is formed as the first electrode layer 185, and the first electrode layer 185 is formed by etching into a desired shape.

In the present invention, a transparent conductive film made of a light-transmitting conductive material may be used for the first electrode layer 185 that is a light-transmitting electrode layer, indium oxide containing tungsten oxide, Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or the like can be used. Needless to say, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide added with silicon oxide (ITSO), or the like can also be used.

Further, even when a material such as a metal film that does not have translucency is used, the first film thickness can be reduced by thinning (preferably about 5 nm to 30 nm) so that light can be transmitted. It becomes possible to emit light from the electrode layer 185. As the metal thin film that can be used for the first electrode layer 185, a conductive film made of titanium, tungsten, nickel, gold, platinum, silver, aluminum, magnesium, calcium, lithium, or an alloy thereof is used. Can do.

The first electrode layer 185 can be formed by an evaporation method, a sputtering method, a CVD method, a printing method, a dispenser method, a droplet discharge method, or the like. In this embodiment, the first electrode layer 185 is formed by a sputtering method using indium zinc oxide containing tungsten oxide. The first electrode layer 185 is preferably used in a total film thickness range of 100 nm to 800 nm.

The first electrode layer 185 may be wiped with a CMP method or a polyvinyl alcohol-based porous material and polished so that the surface thereof is planarized. Further, after polishing using the CMP method, the surface of the first electrode layer 185 may be subjected to ultraviolet irradiation, oxygen plasma treatment, or the like.

Heat treatment may be performed after the first electrode layer 185 is formed. By this heat treatment, moisture contained in the first electrode layer 185 is released. Therefore, the first electrode layer 185 does not cause degassing. Therefore, even when a light-emitting material that is easily deteriorated by moisture is formed over the first electrode layer, the light-emitting material is not deteriorated and the display device has high reliability. Can be produced.

Next, an insulating layer 186 (referred to as a partition wall, a barrier, a bank, or the like) is formed to cover the end portion of the first electrode layer 185 and the source or drain electrode layer.

As the insulating layer 186, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, or the like can be used, and a single layer or a stacked structure of two layers or three layers may be used. As other materials for the insulating layer 186, aluminum nitride, aluminum oxynitride having an oxygen content higher than the nitrogen content, aluminum nitride oxide or aluminum oxide having a nitrogen content higher than the oxygen content, diamond-like carbon (DLC) ), Nitrogen-containing carbon, polysilazane, and other materials including inorganic insulating materials. A material containing siloxane may be used. Further, an organic insulating material may be used, and the organic material may be either photosensitive or non-photosensitive, and polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, or polysilazane can be used. Moreover, an oxazole resin can also be used, for example, photocurable polybenzoxazole or the like can be used.

The insulating layer 186 is formed by a sputtering method, a PVD method (Physical Vapor Deposition), a low pressure CVD method (LPCVD method), a CVD method such as a plasma CVD method (Chemical Vapor Deposition), or a droplet discharge capable of selectively forming a pattern. It is also possible to use a method, a printing method capable of transferring or drawing a pattern (a method of forming a pattern such as screen printing or offset printing), a coating method such as a dispenser method, a spin coating method, or a dipping method.

As the etching process for processing into a desired shape, either plasma etching (dry etching) or wet etching may be employed. Plasma etching is suitable for processing large area substrates. As an etching gas, a fluorine-based gas such as CF ₄ or NF ₃ or a chlorine-based gas such as Cl ₂ or BCl ₃ may be used, and an inert gas such as He or Ar may be appropriately added. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

An adhesive resin is attached on the first electrode layer 185 to form an adhesive layer 193. Further, a conductive filler 211 is attached on the connection wiring 210 in the connection region 205.

Here, a conductive material can be mixed in the adhesive resin so that the adhesive layer 193 has conductivity. The conductive material may be an organic material such as a conductive polymer or an inorganic material such as metal fine particles. For example, metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd and Zn, oxides such as Fe, Ti, Si, Ge, Zr, and Ba, halogen Silver fine particles or dispersible nanoparticles can be used.

In addition, as shown in FIG. 7, a sealing material 192 for fixing the first substrate 100 and the second substrate 195 may be prepared. At that time, as the sealant 192, it is typically preferable to use a visible light curable resin, an ultraviolet curable resin, or a thermosetting resin. For example, bisphenol A type liquid resin, bisphenol A type solid resin, bromine-containing epoxy resin, bisphenol F type resin, bisphenol AD type resin, phenol type resin, cresol type resin, novolac type resin, cyclic aliphatic epoxy resin, epibis type epoxy Epoxy resins such as resins, glycidyl ester resins, glycidyl amine resins, heterocyclic epoxy resins, and modified epoxy resins can be used.

Next, a second electrode layer 189 formed on the second substrate 195 and an electroluminescent layer 188 formed on the second electrode layer 189 is prepared separately. Although only one pixel is shown in FIG. 7, in the present embodiment, field electrode layers corresponding to each color of R (red), G (green), and B (blue) are separately formed. The electroluminescent layer 188 may be manufactured as described in Embodiment Mode 1.

As the second electrode layer 189, Al, Ag, Li, Ca, or an alloy or compound thereof such as MgAg, MgIn, AlLi, CaF ₂ , or calcium nitride may be used.

After the second electrode layer 189 and the adhesive layer 193 are brought into contact, they are cured. Thus, a light-emitting element 190 including the first electrode layer 185, the adhesive layer 193, the electroluminescent layer 188, and the second electrode layer 189 is formed (see FIG. 7B).

In the display device in this embodiment mode illustrated in FIG. 7, light emitted from the light-emitting element 190 is transmitted through and emitted from the first electrode layer 185 side in the direction of the arrow in FIG.

In the display device in FIG. 7 manufactured in this embodiment mode in FIG. 8, the source electrode layer or the drain electrode layer and the first electrode layer are not in direct contact with each other for electrical connection, but through the wiring layer. An example of connection is shown. In the display device in FIG. 8, the source electrode layer or the drain electrode layer of the thin film transistor for driving the light-emitting element and the first electrode layer 185 are electrically connected to each other through the wiring layer 199. Further, in FIG. 8, the first electrode layer 185 is connected so as to be partially stacked on the wiring layer 199. However, the first electrode layer 185 is formed first, and the first electrode layer 185 is formed. The wiring layer 199 may be formed so as to be in contact with the top.

In this embodiment mode, the FPC 194 is connected to the terminal electrode layer 178 with the anisotropic conductive layer 196 in the external terminal connection region 202 so as to be electrically connected to the outside. As shown in FIG. 7A, which is a top view of the display device, the display device manufactured in this embodiment includes a peripheral driver circuit region 204 and a peripheral driver circuit region 209 each including a signal line driver circuit. A peripheral driving circuit region 207 having a scanning line driving circuit and a peripheral driving circuit region 208 are provided.

In this embodiment mode, the circuit is formed as described above. However, the present invention is not limited to this, and an IC chip may be mounted as a peripheral driver circuit by the above-described COG method or TAB method. Further, the gate line driver circuit and the source line driver circuit may be plural or singular.

In the display device of the present invention, the screen display driving method is not particularly limited. For example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the display device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

By using this embodiment mode, the first substrate and the second substrate can be manufactured by separate processes, so that the manufacturing conditions of a film formed on each substrate can be optimized. Become. Therefore, a higher quality display device can be manufactured.

In addition, since a high dielectric material can be mixed with the adhesive resin, it can also function as a dielectric layer, so that the film forming process by vacuum deposition can be reduced and the process can be simplified.

(Embodiment 7)
Although a display device having a light-emitting element can be formed by applying the present invention, light emitted from the light-emitting element performs any one of bottom emission, top emission, and dual emission. In this embodiment, examples of a dual emission type and a top emission type will be described with reference to FIGS. This embodiment shows an example in which the second interlayer insulating layer (insulating film 181) is not formed in the display device manufactured in Embodiment 5. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

9 includes a first substrate 1600, a thin film transistor 1655, a thin film transistor 1665, a thin film transistor 1675, a thin film transistor 1685, a first electrode layer 1617, an adhesive layer 1622, an electroluminescent layer 1619, a second electrode layer 1620, and a seal. Material 1632, insulating film 1601a, insulating film 1601b, gate insulating layer 1610, insulating film 1611, insulating film 1612, insulating layer 1614, second substrate 1625, connection wiring layer 1692, conductive filler 1691, wiring layer 1633, terminal electrode The layer 1681, the anisotropic conductive layer 1682, and the FPC 1683 are included. The display device includes an external terminal connection region 232, a connection region 235, a sealing region 233, a peripheral driver circuit region 234, and a pixel region 236.

The display device in FIG. 9 is a dual emission type, and has a structure in which light is emitted from both the first substrate 1600 side and the second substrate 1625 side in the direction of the arrow. Therefore, a light-transmitting electrode layer is used as the first electrode layer 1617 and the second electrode layer 1620.

In this embodiment mode, specifically, a transparent conductive film formed using a light-transmitting conductive material may be used for the first electrode layer 1617 and the second electrode layer 1620 which are light-transmitting electrode layers. Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or the like can be used. Needless to say, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide added with silicon oxide (ITSO), or the like can also be used.

Further, even when a material such as a metal film that does not have translucency is used, the first film thickness can be reduced by thinning (preferably about 5 nm to 30 nm) so that light can be transmitted. Light can be emitted from the electrode layer 1617 and the second electrode layer 1620 of the first electrode. In addition, examples of a metal thin film that can be used for the first electrode layer 1617 and the second electrode layer 1620 include titanium, tungsten, nickel, gold, platinum, silver, aluminum, magnesium, calcium, lithium, and alloys thereof. A conductive film can be used.

As described above, the display device in FIG. 9 has a structure in which light emitted from the light-emitting element 1605 passes through both the first electrode layer 1617 and the second electrode layer 1620 and emits light from both sides. .

The display device in FIG. 19 has a structure in which the top surface is emitted in the direction of the arrow. 19 includes a first substrate 1300, a thin film transistor 1355, a thin film transistor 1365, a thin film transistor 1375, a thin film transistor 1385, a wiring layer 1324, a first electrode layer 1317, an electroluminescent layer 1319, an adhesive layer 1322, and a second electrode. Layer 1320, sealing material 1332, insulating film 1301a, insulating film 1301b, gate insulating layer 1310, insulating film 1311, insulating film 1312, insulating film 1314, second substrate 1325, wiring layer 1333, connection wiring layer 1392, conductive filler 1391, a terminal electrode layer 1381, an anisotropic conductive layer 1382, and an FPC 1383.

9 and 19, the insulating layer stacked on the terminal electrode layer is removed by etching. As described above, the reliability is further improved when the insulating layer having moisture permeability is not provided around the terminal electrode layer. In FIG. 19, the display device includes an external terminal connection region 232, a connection region 235, a sealing region 233, a peripheral driver circuit region 234, and a pixel region 236. In the display device in FIG. 19, the wiring layer 1324 that is a reflective metal layer is formed under the first electrode layer 1317 in the dual emission display device shown in FIG. A first electrode layer 1317 that is a transparent conductive film is formed over the wiring layer 1324. Since the wiring layer 1324 only needs to have reflectivity, a conductive film made of titanium, tungsten, nickel, gold, platinum, silver, copper, tantalum, molybdenum, aluminum, magnesium, calcium, lithium, or an alloy thereof, or the like May be used. A substance having high reflectivity in the visible light region is preferably used, and a titanium nitride film is used in this embodiment mode. Further, a conductive film may be used for the first electrode layer 1317. In that case, the wiring layer 1324 having reflectivity is not necessarily provided.

For the first electrode layer 1317 and the second electrode layer 1320, specifically, a transparent conductive film formed using a light-transmitting conductive material may be used. Indium oxide containing tungsten oxide or indium containing tungsten oxide may be used. Zinc oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or the like can be used. Needless to say, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide added with silicon oxide (ITSO), or the like can also be used.

Further, even if the material is a material such as a metal film that does not have translucency, the second film thickness can be reduced (preferably, about 5 nm to 30 nm) so that light can be transmitted. It becomes possible to emit light from the electrode layer 1320. As the metal thin film that can be used for the second electrode layer 1320, a conductive film made of titanium, tungsten, nickel, gold, platinum, silver, aluminum, magnesium, calcium, lithium, or an alloy thereof is used. Can do.

A pixel of a display device formed using a light-emitting element can be driven by a simple matrix method or an active matrix method. Further, either digital driving or analog driving can be applied.

A color filter (colored layer) may be formed on the second substrate. The color filter (colored layer) can be formed by an evaporation method or a droplet discharge method. When the color filter (colored layer) is used, high-definition display can be performed. This is because an emission spectrum having a sharp peak can be obtained by the color filter (colored layer).

Full color display can be performed by forming a material exhibiting monochromatic light emission and combining a color filter and a color conversion layer. The color filter (colored layer) and the color conversion layer may be formed, for example, on the second substrate (sealing substrate) and attached to the substrate.

Of course, monochromatic light emission may be displayed. For example, an area color type display device may be formed using monochromatic light emission. As the area color type, a passive matrix type display unit is suitable, and characters and symbols can be mainly displayed.

By using the present invention, the first substrate and the second substrate can be manufactured by completely different processes. Therefore, a high-quality display device can be manufactured by optimizing the process for manufacturing each structure.

In addition, since a high dielectric material can be mixed with the adhesive resin, it can also function as a dielectric layer, so that the film forming process by vacuum deposition can be reduced and the process can be simplified.

(Embodiment 8)
A television device can be completed with the display device formed according to the present invention. FIG. 18 is a block diagram illustrating a main configuration of a television device (an EL television device in this embodiment). In the display panel, only a pixel portion is formed as shown in FIG. 16A, and a scanning line side driver circuit and a signal line side driver circuit are mounted by a TAB method as shown in FIG. And a case where the TFT is formed by SAS as shown in FIG. 16B, and the pixel portion and the scanning line side driver circuit are integrated on the substrate. In some cases, the signal line side driver circuit is separately mounted as a driver IC, and the pixel portion, the signal line side driver circuit, and the scanning line side driver circuit are integrally formed over the substrate as shown in FIG. However, any form is acceptable.

As other external circuit configurations, on the video signal input side, among the signals received by the tuner 854, the video signal amplification circuit 855 that amplifies the video signal, and the signals output from the video signal amplification circuit 855 are red, green, and blue And a control circuit 857 for converting the video signal into the input specifications of the driver IC. The control circuit 857 outputs a signal to each of the scanning line side and the signal line side. In the case of digital driving, a signal dividing circuit 858 may be provided on the signal line side, and an input digital signal may be divided into m pieces and supplied.

Of the signals received by the tuner 854, the audio signal is sent to the audio signal amplifier circuit 859, and the output is supplied to the speaker 863 via the audio signal processing circuit 860. The control circuit 861 receives control information on the receiving station (reception frequency) and volume from the input unit 862, and sends a signal to the tuner 854 and the audio signal processing circuit 860.

As shown in FIGS. 12A and 12B, the display module can be incorporated into a housing to complete the television device. A display panel attached to the FPC is generally referred to as an EL display module. Therefore, when an EL display module is used, an EL television device can be completed. A main screen 2003 is formed by the display module, and a speaker portion 2009, operation switches, and the like are provided as other accessory equipment. Thus, a television device can be completed according to the present invention.

Moreover, you may make it cut off the reflected light of the light which injects from the outside using a phase difference plate or a polarizing plate. In the case of a top emission display device, an insulating layer serving as a partition may be colored and used as a black matrix. This partition wall can also be formed by a droplet discharge method or the like. Carbon black or the like may be mixed with a pigment-based black resin or a resin material such as polyimide, or may be laminated. A different material may be discharged to the same region a plurality of times by a droplet discharge method to form a partition wall. As the phase difference plate and the phase difference plate, a λ / 4 plate or a λ / 2 plate may be used so that light can be controlled. As a configuration, a TFT element substrate, a light emitting element, a sealing substrate (sealing material), a phase difference plate, a phase difference plate (λ / 4 plate, λ / 2 plate), and a polarizing plate are sequentially emitted from the light emitting element. The light passes through these and is emitted to the outside from the polarizing plate side. You may laminate | stack a polarizing plate, a phase difference plate, etc. The retardation plate and the polarizing plate may be installed on the side from which light is emitted, and may be installed on both sides as long as the display is a double-sided emission type that emits light on both sides. Further, an antireflection film may be provided outside the polarizing plate. Thereby, it is possible to display a higher-definition and precise image.

As shown in FIG. 12A, a display panel 2002 using a display element is incorporated in a housing 2001, and reception of general television broadcasting is started by a receiver 2005, or wired or wirelessly via a modem 2004. By connecting to a communication network, information communication in one direction (from the sender to the receiver) or in both directions (between the sender and the receiver or between the receivers) can be performed. The television device can be operated by a switch incorporated in the housing or a separate remote controller 2006, and this remote controller is also provided with a display unit 2007 for displaying information to be output. Also good.

In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display channels, volume, and the like. In this configuration, the main screen 2003 may be formed using an EL display panel with an excellent viewing angle, and the sub screen may be formed using a liquid crystal display panel that can display with low power consumption. In order to prioritize the reduction in power consumption, the main screen 2003 may be formed using a liquid crystal display panel, the sub screen may be formed using an EL display panel, and the sub screen may blink. When the present invention is used, a highly reliable display device can be obtained even when such a large substrate is used and a large number of TFTs and electronic components are used.

FIG. 12B illustrates a television device having a large display portion of 20 to 80 inches, for example, which includes a housing 2010, a keyboard portion 2012 that is an operation portion, a display portion 2011, a speaker portion 2013, and the like. The present invention is applied to manufacture of the display portion 2011. Since the display portion in FIG. 12B uses a bendable substance, the display device is a television device having a curved display portion. Since the shape of the display portion can be freely designed as described above, a television device having a desired shape can be manufactured.

According to the present invention, since a display device can be formed through a simple process, cost reduction can be achieved. Therefore, a television device using the present invention can be formed at low cost even if it has a large screen display portion. Therefore, a high-performance and highly reliable television device can be manufactured with high yield.

Of course, the present invention is not limited to a television device, but can be applied to various applications such as personal computer monitors, information display boards at railway stations and airports, and advertisement display boards on streets. can do.

This embodiment mode can be used in combination with each of Embodiment Modes 1 to 7.

(Embodiment 9)
This embodiment will be described with reference to FIG. In this embodiment, an example of a module using a panel including the display device manufactured in Embodiments 4 to 8 will be described.

    An information terminal module illustrated in FIG. 13A includes a printed wiring board 986, a controller 901, a central processing unit (CPU) 902, a memory 911, a power supply circuit 903, an audio processing circuit 929, a transmission / reception circuit 904, and other resistors. Elements such as a buffer and a capacitive element are mounted. The panel 900 is connected to a printed wiring board 986 via a flexible wiring board (FPC) 908.

  The panel 900 includes a pixel portion 905 in which a light-emitting element is provided in each pixel, a first scanning line driver circuit 906 a that selects a pixel included in the pixel portion 905, and a second scanning line driver circuit 906 b. A signal line driver circuit 907 for supplying a video signal to the pixels is provided.

  Various control signals are input / output via an interface (I / F) unit 909 provided on the printed wiring board 986. An antenna port 910 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 986.

  Note that although a printed wiring board 986 is connected to the panel 900 through the FPC 908 in this embodiment mode, the present invention is not necessarily limited to this structure. The controller 901, the audio processing circuit 929, the memory 911, the CPU 902, or the power supply circuit 903 may be directly mounted on the panel 900 by using a COG (Chip on Glass) method. The printed wiring board 986 is provided with various elements such as a capacitor element and a buffer to prevent noise from being applied to the power supply voltage and the signal and the rise of the signal from being slowed down.

  FIG. 13B shows a block diagram of the module shown in FIG. This module includes a VRAM 932, a DRAM 925, a flash memory 926, and the like as the memory 911. The VRAM 932 stores image data to be displayed on the panel, the DRAM 925 stores image data or audio data, and the flash memory stores various programs.

  The power supply circuit 903 generates a power supply voltage to be supplied to the panel 900, the controller 901, the CPU 902, the sound processing circuit 929, the memory 911, and the transmission / reception circuit 904. Depending on the specifications of the panel, the power supply circuit 903 may be provided with a current source.

  The CPU 902 includes a control signal generation circuit 920, a decoder 921, a register 922, an arithmetic circuit 923, a RAM 924, an interface 935 for the CPU, and the like. Various signals input to the CPU 902 via the interface 935 are once held in the register 922 and then input to the arithmetic circuit 923, the decoder 921, and the like. The arithmetic circuit 923 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the signal input to the decoder 921 is decoded and input to the control signal generation circuit 920. The control signal generation circuit 920 generates a signal including various instructions based on the input signal, and a location designated by the arithmetic circuit 923, specifically, a memory 911, a transmission / reception circuit 904, an audio processing circuit 929, a controller 901, and the like. Send to.

  The memory 911, the transmission / reception circuit 904, the audio processing circuit 929, and the controller 901 operate according to the received commands. The operation will be briefly described below.

  A signal input from the input unit 930 is sent to the CPU 902 mounted on the printed wiring board 986 via the interface 909. The control signal generation circuit 920 converts the image data stored in the VRAM 932 into a predetermined format according to a signal sent from the input unit 930 such as a pointing device or a keyboard, and sends the image data to the controller 901.

  The controller 901 performs data processing on a signal including image data sent from the CPU 902 in accordance with the panel specifications, and supplies the processed signal to the panel 900. Further, the controller 901 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R based on the power supply voltage input from the power supply circuit 903 and various signals input from the CPU 902. Generated and supplied to the panel 900.

  In the transmission / reception circuit 904, signals transmitted / received as radio waves in the antenna 933 are processed. Specifically, high-frequency signals such as isolators, band-pass filters, VCOs (Voltage Controlled Oscillators), LPFs (Low Pass Filters), couplers, and baluns are used. Includes circuitry. A signal including audio information among signals transmitted and received in the transmission / reception circuit 904 is sent to the audio processing circuit 929 in accordance with a command from the CPU 902.

  A signal including audio information sent in accordance with a command from the CPU 902 is demodulated into an audio signal by the audio processing circuit 929 and sent to the speaker 928. The audio signal sent from the microphone 927 is modulated by the audio processing circuit 929 and sent to the transmission / reception circuit 904 in accordance with a command from the CPU 902.

  The controller 901, the CPU 902, the power supply circuit 903, the sound processing circuit 929, and the memory 911 can be mounted as a package of this embodiment mode. This embodiment can be applied to any circuit other than a high-frequency circuit such as an isolator, a band-pass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, and a balun.

(Embodiment 10)
This embodiment will be described with reference to FIG. FIG. 14 shows one mode of a portable small telephone (mobile phone) using radio including the module manufactured in the ninth embodiment. The panel 900 is detachably incorporated in the housing 981 so that it can be easily combined with the module 999. The shape and size of the housing 981 can be changed as appropriate in accordance with an electronic device to be incorporated.

A housing 981 to which the panel 900 is fixed is fitted to a printed wiring board 986 and assembled as a module. A plurality of packaged semiconductor devices are mounted on the printed wiring board 986. The plurality of semiconductor devices mounted on the printed wiring board 986 have any one function of a controller, a central processing unit (CPU), a memory, a power supply circuit, a resistor, a buffer, a capacitor, and the like. Further, a signal processing circuit 993 such as an audio processing circuit including a microphone 994 and a speaker 995 and a transmission / reception circuit is provided. Panel 900 is connected to printed wiring board 986 via FPC 908.

Such a module 999, a housing 981, a printed wiring board 986, input means 998, and a battery 997 are housed in a housing 996. The pixel portion of the panel 900 is arranged so as to be visible from an opening window formed in the housing 996.

A housing 996 illustrated in FIG. 14 illustrates an external shape of a telephone as an example. However, the electronic device according to this embodiment can be transformed into various modes depending on the function and application. In the following embodiment, an example of the aspect will be described.

(Embodiment 11)
As an electronic apparatus according to the present invention, a television device (also simply referred to as a television or a television receiver), a camera such as a digital camera or a digital video camera, a mobile phone device (also simply referred to as a mobile phone or a mobile phone), a PDA, or the like Portable information terminals, portable game machines, computer monitors, computers, sound reproduction apparatuses such as car audio, and image reproduction apparatuses equipped with recording media such as home game machines. A specific example thereof will be described with reference to FIG.

A portable information terminal device illustrated in FIG. 15A includes a main body 9201, a display portion 9202, and the like. The display device of the present invention can be applied to the display portion 9202. As a result, a portable information terminal device with lower power consumption, high image quality, and high reliability can be provided.

A digital video camera shown in FIG. 15B includes a display portion 9701, a display portion 9702, and the like. The display device of the present invention can be applied to the display portion 9701. As a result, a digital video camera with lower power consumption, high image quality, and high reliability can be provided.

A cellular phone shown in FIG. 15C includes a main body 9101, a display portion 9102, and the like. The display device of the present invention can be applied to the display portion 9102. As a result, a mobile phone with lower power consumption, high image quality, and high reliability can be provided.

A portable television device illustrated in FIG. 15D includes a main body 9301, a display portion 9302, and the like. The display device of the present invention can be applied to the display portion 9302. As a result, a portable television device with lower power consumption, high image quality, and high reliability can be provided. In addition, the present invention can be applied to a wide variety of television devices, from a small one mounted on a portable terminal such as a cellular phone to a medium-sized one that can be carried and a large one (for example, 40 inches or more). The display device can be applied.

A portable computer shown in FIG. 15E includes a main body 9401, a display portion 9402, and the like. The display device of the present invention can be applied to the display portion 9402. As a result, a portable computer with lower power consumption, high image quality, and high reliability can be provided.

The display device of the present invention can also be used as a lighting device. One mode in which the light-emitting element of the present invention is used as a lighting device is described with reference to FIGS.

FIG. 20 shows an example of a liquid crystal display device using the display device of the present invention as a backlight. The liquid crystal display device illustrated in FIG. 20 includes a housing 501, a liquid crystal layer 502, a backlight 503, and a housing 504, and the liquid crystal layer 502 is connected to a driver IC 505. The backlight 503 uses the display device of the present invention, and a current is supplied from a terminal 506.

By using the display device of the present invention as a backlight of a liquid crystal display device, a long-life backlight unique to inorganic EL can be obtained. In addition, since the display device of the present invention is a surface-emitting illumination device and can have a large area, the backlight can have a large area and a liquid crystal display device can have a large area. Further, since the display device is thin, the display device can be thinned.

Further, it can be used as a headlight for automobiles, bicycles, ships, and the like. FIG. 21 shows an example in which a display device to which the present invention is applied is used as a headlight of an automobile. FIG. 21B is an enlarged cross-sectional view of the headlight 1000 of FIG. In FIG. 21B, the display device of the present invention is used as the light source 1011. Light emitted from the light source 1011 is reflected by the reflecting plate 1012 and extracted to the outside. As shown in FIG. 21B, light with higher luminance can be obtained by using a plurality of light sources. FIG. 21C shows an example in which the display device of the present invention manufactured in a cylindrical shape is used as a light source. Light emitted from the light source 1021 is reflected by the reflecting plate 1022 and extracted outside.

FIG. 22 shows an example in which the display device to which the present invention is applied is used as a table lamp which is a lighting device. The desk lamp shown in FIG. 22 includes a housing 2101 and a light source 2102, and the display device of the present invention is used as the light source 2102. Since the display device of the present invention can emit light with high luminance, the user can illuminate his / her hand brightly when performing fine work.

FIG. 23 shows an example in which a display device to which the present invention is applied is used as an indoor lighting device 3001. Since the display device of the present invention can have a large area, the display device can be used as a large-area lighting device. In addition, since the display device of the present invention is thin and has low power consumption, it can be used as a lighting device with low thickness and low power consumption. As described above, the television set according to the present invention as described with reference to FIGS. 12A and 12B is installed in a room where the display device to which the present invention is applied is used as the indoor lighting device 3001. You can watch broadcasts and movies. In such a case, since both devices have low power consumption, powerful images can be viewed in a bright room without worrying about electricity charges.

The lighting device is not limited to those illustrated in FIG. 21, FIG. 22, and FIG. 23, and can be applied as various types of lighting devices including lighting of houses and public facilities. In such a case, since the illuminating device according to the present invention has a thin light-emitting medium and thus has a high degree of design freedom, it is possible to provide products with various designs on the market.

As described above, the display device of the present invention can provide an electronic device with lower power consumption, high image quality, and high reliability. This embodiment mode can be freely combined with the above embodiment modes.

4A and 4B illustrate a method for manufacturing a light-emitting element of the present invention. 4A and 4B illustrate a light-emitting element of the present invention. 4A and 4B illustrate a light-emitting element of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 8A and 8B each illustrate an electronic device of the invention. The figure explaining the lighting fixture of this invention. The figure explaining the lighting fixture of this invention. The figure explaining the lighting fixture of this invention.

Explanation of symbols

11 First substrate 12 First electrode 13 Dielectric layer 14 Light emitting layer 15 Adhesive layer 16 Second electrode 17 Second substrate 18 Structure 19 Structure 21 First substrate 22 First electrode 23a Dielectric layer 23b Dielectric Body layer 24 Light emitting layer 25 Adhesive layer 26 Second electrode 27 Second substrate 28a Structure 28b Structure 29a Structure 29b Structure 30 Structure 31 First substrate 32 First electrode 33 Luminescent material 34 Adhesive resin 35 Second electrode 36 Second substrate 37 Binder 38 Material 39 Structure 40a Adhesive layer 40b Adhesive layer 40c Light emitting layer 80 Drop control circuit 82 Drop head 84 Substrate 85 Composition 86 Frame 100 First substrate 101a Base film 101b Base film 107 Gate insulating layer 167 Insulating film 168 Insulating film 178 Terminal electrode layer 179a Wiring 179b Wiring 181 Insulating film 185 First electrode layer 186 Insulating layer 188 Electric Field light emitting layer 189 Second electrode layer 190 Light emitting element 192 Sealing material 193 Adhesive layer 194 FPC
195 Second substrate 196 Anisotropic conductive layer 199 Wiring layer 201 Area 202 External terminal connection area 203 Wiring area 204 Peripheral drive circuit area 205 Connection area 206 Pixel area 207 Peripheral drive circuit area 208 Peripheral drive circuit area 209 Peripheral drive circuit area 210 Connection wiring 211 Conductive filler 232 External terminal connection region 233 Sealing region 234 Peripheral drive circuit region 235 Connection region 236 Pixel region 255 Thin film transistor 265 Thin film transistor 275 Thin film transistor 285 Thin film transistor 300 Substrate 301a Insulating layer 301b Insulating layer 302a Gate electrode layer 302b Gate electrode Layer 304a semiconductor layer 304b semiconductor layer 305a wiring 306a first electrode layer 306b first electrode layer 307 partition wall (insulating layer)
308 Insulating layer 309 Insulating layer 310a Transistor 310b Transistor 311 Insulating layer 312 Electroluminescent layer 313 Second electrode layer 314 Second substrate 315a Light emitting element 315b Light emitting element 316a Adhesive layer 316b Adhesive layer 350 First substrate 351 Single crystal semiconductor substrate 355a Electrode layer 355b Electrode layer 355c Electrode layer 355d Electrode layer 356a First electrode layer 356b First electrode layer 360a Field effect transistor 360b Field effect transistor 361 Insulating layer 362a Electroluminescent layer 362b Electroluminescent layer 363 Second electrode layer 364 Second substrate 365a Light emitting element 365b Light emitting element 367 Partition (insulating layer)
368 Element isolation region 369 Insulating layer 370 Insulating layer 371 Adhesive layer 501 Case 502 Liquid crystal layer 503 Backlight 504 Case 505 Driver IC
506 Terminal 750 First substrate 751a First electrode layer 751b First electrode layer 751c First electrode layer 752 Adhesive layer 753 Electroluminescent layer 754a Second electrode layer 754b Second electrode layer 754c Second electrode layer 755 Second substrate 772a Adhesive layer 772b Adhesive layer 772c Adhesive layer 776 Partition (insulating layer)
795 Second board 854 Tuner 855 Video signal amplification circuit 856 Video signal processing circuit 857 Control circuit 858 Signal division circuit 859 Audio signal amplification circuit 860 Audio signal processing circuit 861 Control circuit 862 Input unit 863 Speaker 900 Panel 901 Controller 902 CPU
903 Power supply circuit 904 Transmission / reception circuit 905 Pixel portion 906a Scanning line driving circuit 906b Scanning line driving circuit 907 Signal line driving circuit 908 FPC
909 Interface 910 Antenna port 911 Memory 920 Control signal generation circuit 921 Decoder 922 Register 923 Arithmetic circuit 924 RAM
925 DRAM
926 Flash memory 927 Microphone 928 Speaker 929 Audio processing circuit 930 Input means 904 Transmission / reception circuit 932 VRAM
933 Antenna 935 Interface 986 Printed circuit board 999 Module 981 Housing 986 Printed circuit board 993 Signal processing circuit 994 Microphone 995 Speaker 996 Case 997 Battery 998 Input means 1000 Headlight 1011 Light source 1012 Reflector 1021 Light source 1022 Reflector 1300 First substrate 1301a Insulating film 1301b Insulating film 1310 Gate insulating layer 1311 Insulating film 1312 Insulating film 1314 Insulating film 1317 First electrode layer 1319 Electroluminescent layer 1320 Second electrode layer 1322 Adhesive layer 1324 Wiring layer 1325 Second substrate 1332 Sealing material 1333 Wiring layer 1355 Thin film transistor 1365 Thin film transistor 1375 Thin film transistor 1381 Terminal electrode layer 1382 Anisotropic conductive layer 1383 FPC
1385 Thin film transistor 1391 Conductive filler 1392 Connection wiring layer 1600 First substrate 1601a Insulating film 1601b Insulating film 1605 Light emitting element 1610 Gate insulating layer 1611 Insulating film 1612 Insulating film 1614 Insulating layer 1617 First electrode layer 1619 Electroluminescent layer 1620 Second Electrode layer 1622 adhesive layer 1625 second substrate 1632 sealing material 1633 wiring layer 1655 thin film transistor 1665 thin film transistor 1675 thin film transistor 1681 terminal electrode layer 1682 anisotropic conductive layer 1683 FPC
1685 Thin film transistor 1691 Conductive filler 1692 Connection wiring layer 2001 Case 2002 Display panel 2003 Main screen 2004 Modem 2005 Receiver 2006 Remote control operation device 2007 Display unit 2008 Sub screen 2009 Speaker unit 2010 Case 2011 Display unit 2012 Keyboard unit 2013 Speaker unit 2101 Housing 2102 Light source 2700 Substrate 2701 Pixel portion 2702 Pixel 2703 Scan line side input terminal 2704 Signal line side input terminal 2750 FPC
2751 Driver IC
3001 Illumination device 3700 Substrate 3701 Pixel portion 3702 Scan line side drive circuit 3704 Signal line side input terminal 4700 Substrate 4701 Pixel portion 4702 Scan line drive circuit 4704 Signal line drive circuit 9101 Main body 9102 Display portion 9201 Main body 9202 Display portion 9301 Main body 9302 Display portion 9401 Main body 9402 Display portion 9701 Display portion 9702 Display portion

Claims (12)

Forming a first electrode layer on a first substrate;
Forming a first dielectric layer on the first electrode layer;
Forming a light emitting layer on the first dielectric layer;
Forming an adhesive layer made of uncured resin on the light emitting layer;
Forming a second electrode layer on the second substrate;
A method for manufacturing a light-emitting device, wherein after the second electrode layer and the adhesive layer are brought into contact with each other, the adhesive layer is cured to form a light-emitting element. Forming a first electrode layer on a first substrate;
Forming a first dielectric layer on the first electrode layer;
Forming a light emitting layer on the first dielectric layer;
Forming a second dielectric layer on the light emitting layer;
Forming an adhesive layer of uncured resin on the second dielectric layer;
Forming a second electrode layer on the second substrate;
A method for manufacturing a light-emitting device, wherein after the second electrode layer and the adhesive layer are brought into contact with each other, the adhesive layer is cured to form a light-emitting element. In claim 1 or claim 2,
A method for manufacturing a light-emitting device, comprising forming a light-emitting layer over the first dielectric layer and then performing heat treatment. Forming a first electrode layer on a first substrate;
Forming an adhesive layer made of an uncured resin containing a light emitting material on the first electrode layer;
Forming a second electrode layer on the second substrate;
A method for manufacturing a light-emitting device, wherein after the second electrode layer and the adhesive layer are brought into contact with each other, the adhesive layer is cured to form a light-emitting element. In any one of Claim 1 to Claim 4,
A method for manufacturing a light-emitting device, wherein a conductive material is mixed in the adhesive layer. In any one of Claim 1 to Claim 4,
A method for manufacturing a light-emitting device, wherein a dielectric material is mixed in the adhesive layer. In claim 6,
The method for manufacturing a light-emitting device, wherein the dielectric material is a cyanoethyl cellulose resin, barium titanate, or strontium titanate. In any one of Claims 1 thru | or 7,
A method for manufacturing a display device, wherein the adhesive layer is dropped by a dropping method. In any one of Claims 1 thru | or 8,
A method for manufacturing a display device, wherein the adhesive layer is cured by ultraviolet rays. A first electrode layer, a second electrode layer, a light emitting layer, a dielectric layer and an adhesive layer between the first electrode layer and the second electrode layer;
The light emitting layer is provided on the first electrode layer;
The adhesive layer is provided on the light emitting layer;
The second electrode layer is provided on the adhesive layer;
The light emitting device, wherein the dielectric layer is in contact with the first electrode layer or the second electrode layer. A first electrode layer, a second electrode layer, and an adhesive layer between the first electrode layer and the second electrode layer;
The adhesive layer containing a light emitting material is provided on the first electrode layer,
The light-emitting device, wherein the second electrode layer is provided on the adhesive layer. In claim 11,
The light emitting layer includes particles of a light emitting material and a binder,
A light emitting device having a structure in which particles of the light emitting material are dispersed in the binder.

Images