JP2007329642A - Rf power amplifying device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a difference between detection output signals of a high-output mode or low-output mode at the time of high-frequency-side transmission and low-frequency-side transmission when one coupler detects transmission power levels of a plurality of RF power amplifiers. <P>SOLUTION: The output power levels of a first power amplifier RF_PA_LB for low-band frequency and a second power amplifier RF_PA_HB for high-band frequency are detected by the one coupler CPL. A first detector DET1 and a second detector DET2 perform low-level detection and high-level detection. When the RF_PA_LB is selected, the output signal amplitude of a first output adjusting unit Var_Att between the CPL and DET2 is set to a low level to keep balance with loss of a high-level detection signal at the time of the high band. When the RF_PA_HB is selected, on the other hand, the output V<SB>DET</SB>of a second output adjusting unit Vdet_Amp between the output of the DET1 and a power control circuit Err_Amp is set to a high level to compensate loss of a low-level detection signal at the time of the high band. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an RF power amplifying apparatus for RF transmission mounted in a communication terminal device such as a mobile phone terminal that performs communication with a base station, and in particular, a plurality of RF power amplifiers that transmit a plurality of RF transmission frequencies. The present invention relates to a technique useful for detecting output transmission power by a common power detection coupler.

  Ubiquitous coverage, which is the capability of communication terminal devices such as mobile phone terminals that communicate wirelessly anywhere in the world, is not real today and is currently being developed.

  According to the following Non-Patent Document 1, these mobile systems are GSM (Global System for Mobile Communication), GPRS (General Packet Radio Service), EDGE (Enhanced Data for GSM Evolution; Enhanced Data for GPRS), WCDMA (Wideband Code). Division Multiple Access) and networks such as IEEE 803.11-b, -a, and -g, for example, personal area networks such as Bluetooth and ZigBee. These systems are characterized by a wide range of combinations of constant envelope and envelope change signals, time division and code division multiplexing, and high (several watts) to low (microwatts) transmission output power. It reaches to. As a result, there is a growing demand for RF power amplifiers in multimode applications.

  On the other hand, Non-Patent Document 2 below describes an RF power amplifier module that transmits a quad band including the frequency bands of GSM850, GSM900, DCS1800, and PCS1900. DCS is an abbreviation for Digital Cellular System, and PCS is an abbreviation for Personal Communication System. The RF power amplifier module amplifies a first power amplifier for amplifying a first RF transmission input signal having a first frequency band of GSM850 and GSM900, and a second RF transmission input signal having a second frequency band of DCS1800 and PCS1900. A second power amplifier, a first output matching circuit of the first power amplifier, a second output matching circuit of the second power amplifier, a first directional coupler connected to the first output matching circuit, and a second output A second directional coupler connected to the matching circuit, and a logarithmic power detector / power controller to which the outputs of the first directional coupler and the second directional coupler are supplied. This logarithmic power detector is supplied with a four-stage multistage amplifier that amplifies the output of the directional coupler, an input signal of the multistage amplifier, three interstage output signals of the multistage amplifier, and a final output signal of the multistage amplifier. And a stage detector. The output of the directional coupler and the set voltage are compared by a logarithmic power detector, and the APC (Automatic Power Control) voltage Vapc of the output from the power controller is an RF power amplifier so that the output of the directional coupler matches the set voltage. To control the gain.

Earl McCune, “High-Efficiency, Multi-Mode, Multi-Band Terminal Power Amplifiers”, IEEE microwave magazine, March 2005, PP. 44-55. Shuyun Zhang et al, “A Novel Power-Amplifier Module for Quad-Band Wireless Handset Applications”, IEEE TRANSACTIONS ON MICROWAVELTE QUALITY. 52, no. 11, NOVEMBER 2003, PP. 2203-2210.

  Prior to the present invention, the inventors engaged in the development of an RF power amplifier module that transmits a quad band including the frequency bands of GSM850, GSM900, DCS1800, and PCS1900.

  In the RF power amplifier module developed prior to the present invention, an attempt was made to reduce the cost and the module size by reducing the number of directional couplers, which were conventionally required, to one.

  In this RF power amplifier module, two output matching circuits are connected to the outputs of the two RF power amplifiers, and an output selection switch of two inputs and one output is connected to the outputs of the two output matching circuits. A common power detection coupler is connected to one output of the power supply, and the output of the coupler is connected to the input of the power detection circuit via a signal line.

  This power detection circuit also has a large input dynamic range that covers a wide input range from a high output mode in which the RF power amplifier outputs extremely high transmission output power to a low output mode in which extremely low transmission output power is output. Therefore, the power detection circuit is constituted by the multistage amplifier and the plurality of detectors. The multistage amplifier amplifies an RF detection signal from a common power detection coupler. The multistage output signal of the multistage amplifier is supplied to the input of the multistage detector constituting the first detector, the RF detection signal from the coupler is supplied to the input of the second detector, and the output signal of the first detector A detection output signal is generated by combining with the output signal of the second detector.

  However, the present inventors, in the RF power amplifier module developed prior to the present invention, have two transmission frequency bands of a low frequency side RF transmission frequency of about 850 to 900 MHz and a high frequency side RF transmission frequency of about 1800 to 1900 MHz. It has been found that the detected output signal in the high output mode is lower when transmitting at the high frequency side RF transmission frequency than when transmitting at the low frequency side RF transmission frequency due to the large difference in frequency. As a result, a difference occurs in the transmission output power in the high output mode between the transmission at the high frequency side RF transmission frequency and the transmission at the low frequency side RF transmission frequency. A more specific problem is that, in the high output mode at the time of transmission at the high frequency side RF transmission frequency, the predetermined high output power is output from the RF power amplifier even though the predetermined high output power is output from the RF power amplifier. That is, a detection output signal having a signal level indicating a low transmission output power is output from the power detector. As a result, it is determined that the transmission output power is insufficient in the power detection circuit, and the transmission output power higher than a predetermined high level is actually output from the RF power amplifier when transmitting at the high frequency side RF transmission frequency. Will be.

  In the RF power amplifier module developed prior to the present invention, the present inventors have transmitted the low frequency side RF transmission frequency when the signal level of the detected output signal in the low output mode is the high frequency side RF transmission frequency. I also found the problem of lowering than time. As a result, there is a difference in transmission output power in the low output mode between transmission at the high frequency side RF transmission frequency and transmission at the low frequency side RF transmission frequency. A more specific problem is that, in the low output mode at the time of transmission of the high frequency side RF transmission frequency, the predetermined low level transmission output power is output from the RF power amplifier in spite of the predetermined low level output power. Furthermore, a detection output signal having a signal level indicating a further lower transmission output power is output from the power detector. As a result, it is determined that the transmission output power is insufficient in the power detection circuit, and in actuality, transmission output power higher than a predetermined low level is output from the RF power amplifier when transmitting at the high frequency side RF transmission frequency. It will be.

  Accordingly, an object of the present invention is to detect the transmission power of the outputs of a plurality of RF power amplifiers that transmit a plurality of RF transmission frequencies with a single power detection coupler in the high output mode. The object is to reduce the difference in the signal level of the detection output signal that occurs between the transmission of the high frequency side RF transmission frequency and the transmission of the low frequency side RF transmission frequency. Another object of the present invention is to provide a low output mode when detecting the transmission power of the outputs of a plurality of RF power amplifiers that transmit a plurality of RF transmission frequencies by a single power detection coupler. It is intended to reduce the difference in the signal level of the detection output signal that occurs between the transmission at the high frequency side RF transmission frequency and the transmission at the low frequency side RF transmission frequency.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  The outline of a typical invention among the inventions disclosed in the present application will be briefly described as follows.

That is, an RF power amplifying apparatus according to an embodiment of the present invention includes a first power amplifier (RF_PA_LB) that amplifies a first RF transmission input signal (Pin_LB) having a first frequency band, and a frequency higher than the first frequency band. A second power amplifier (RF_PA_HB) for amplifying a second RF transmission input signal (Pin_HB) having the second frequency band, transmission of the output of the first power amplifier (RF_PA_LB) and the output of the second power amplifier (RF_PA_HB) One coupler (CPL) for detecting the level of the output power (Pout) and an RF coupler detection signal (RF_cpl) from the coupler (CPL) are supplied to one end, and the RF power detection input is input to the other end. A signal line (MSL) for transmitting a signal (RFin) and the other end of the signal line (MSL) Power detector for generating a RF power detection output signal _{(V DET)} by serial RF power detection input signal (RFin) is supplied to the input terminal and (RF_DET), RF transmission level instruction signal (Vramp) and the power detection In response to the RF power detection output signal (V _DET ) generated from the detector (RF_DET), the transmission output power (Pout) at a level according to the level of the RF transmission level instruction signal (Vramp) is the first power. The arbitrary power of the first power amplifier (RF_PA_LB) and the second power amplifier (RF_PA_HB) to be output from any one of the outputs of a power amplifier (RF_PA_LB) and the second power amplifier (RF_PA_HB) And an error amplifier (Err_Amp) for controlling one of them.

  The power detector (RF_DET) includes a multistage amplifier (RF_Det_Amp), a first detector (DET1), and a second detector (DET2). The multistage amplifier (RF_Det_Amp) amplifies the RF power detection input signal (RFin) at the other end of the signal line (MSL). A plurality of cascaded amplifiers (AMP1, AMP2, AMP3) constituting the multistage amplifier (RF_Det_Amp) are connected to input terminals of a plurality of detectors (Det1, Det2, Det3) constituting the first detector (DET1). The amplified output signal is supplied.

  The RF power detection input signal (RFin) at the other end of the signal line (MSL) is supplied to the input of the second detector (DET2), and the output signal of the first detector (DET1) and the first A detection output signal (ΣIdet) is generated by combining with the output signal of the two detectors (DET2).

  The RF power amplifier is supplied with a band selection signal (BAND) indicating whether to use either the first power amplifier (RF_PA_LB) or the second power amplifier (RF_PA_HB). At one level of the band selection signal (BAND), the first power amplifier (RF_PA_LB) is activated and the second power amplifier (RF_PA_HB) is deactivated, and at the other level of the band selection signal (BAND) The first power amplifier (RF_PA_LB) is deactivated and the second power amplifier (RF_PA_HB) is activated.

  A first output adjustment unit (Var_Att) controlled by the band selection signal (BAND) is connected between the input of the second detector (DET2) and the other end of the signal line (MSL). When the first power amplifier (RF_PA_LB) is activated and the second power amplifier (RF_PA_HB) is deactivated by the one level of the band selection signal (BAND), the first output adjustment unit (Var_Att) Is controlled to a low amplitude level, the first power amplifier (RF_PA_LB) is deactivated and the second power amplifier (RF_PA_HB) is activated by the other level of the band selection signal (BAND). The output signal of the first output adjustment unit (Var_Att) is higher than the low amplitude level. Is controlled (see FIG. 1, FIG. 4).

  According to the means of the one aspect of the present invention, the initial object can be achieved by the following operation.

  When the first power amplifier (RF_PA_LB) is deactivated and the second power amplifier (RF_PA_HB) is activated by the other level of the band selection signal (BAND), the first frequency band is higher than the first frequency band. The second RF transmission input signal (Pin_HB) in the second frequency band having a high frequency is supplied to the RF power amplifier. In the high output mode in which high transmission output power (Pout) is output, the RF power detection input signal (RFin) at the other end of the signal line (MSL) supplied to the input of the multistage amplifier (RF_Det_Amp) is also The signal level is high. Therefore, when the signal level of the RF power detection input signal (RFin) is high, the plurality of cascade-connected amplifiers (AMP1, AMP2, AMP3) constituting the multistage amplifier (RF_Det_Amp) are saturated and the amplified output thereof The signal level is clipped by the power supply voltage. Accordingly, the plurality of detection output signals of the plurality of detectors (Det1, Det2, Det3) constituting the first detector (DET1) are also saturated. However, even if the signal level of the RF power detection input signal (RFin) is high, the second detector (DET2) to which the first output adjustment unit (Var_Att) is connected is not saturated. Therefore, the detection output signal of the second detector (DET2) rises substantially linearly with respect to the level rise of the RF power detection input signal (RFin) at the other end of the signal line (MSL). As a result, when the signal level of the RF power detection input signal (RFin) is high, the detection output signal (ΣIdet) of the power detector (RF_DET) is the detection output signal of the second detector (DET2). Is the dominant signal component.

  In addition, when the second RF transmission input signal (Pin_HB) in the second frequency band at a high frequency is supplied, the first RF transmission input signal (Pin_LB) in the first frequency band at a low frequency is supplied. Compared with the case where the transmission output power (Pout) level is detected, the loss of the coupler (CPL) for detecting the level of the transmission output power (Pout) is small. However, when the RF coupler detection signal (RF_cpl) from the coupler (CPL) is supplied to one end, the signal line (MSL) that transmits the RF power detection input signal (RFin) to the other end has a high frequency. The loss is larger when the second RF transmission input signal (Pin_HB) in two frequency bands is supplied (see FIG. 2).

  As a result, the level of the detection output signal of the second detector (DET2) due to loss of the signal line (MSL) when the second RF transmission input signal (Pin_HB) in the second frequency band of high frequency is supplied. The signal level of the detection output signal (ΣIdet) of the power detector (RF_DET) in the high output mode is lower when transmitting the high frequency side RF transmission frequency than when transmitting the low frequency side RF transmission frequency. It is the cause.

  According to the one aspect of the present invention, the first power amplifier (RF_PA_LB) is activated and the second power amplifier (RF_PA_HB) is deactivated by the one level of the band selection signal (BAND). In this case, the output signal of the first output adjustment unit (Var_Att) is controlled to a low amplitude level, and the first power amplifier (RF_PA_LB) is deactivated by the other level of the band selection signal (BAND). When the second power amplifier (RF_PA_HB) is activated, the output signal of the first output adjustment unit (Var_Att) is controlled to a high amplitude level (see FIGS. 1 and 4). Therefore, by controlling the amplitude level of the output signal of the first output adjustment unit (Var_Att), the signal level of the detection output signal (ΣIdet) in the high output mode is transmitted at the high frequency side RF transmission frequency and the low frequency side RF. It is possible to reduce the difference that occurs between transmission frequencies.

In the RF power amplifying device according to one specific form of the present invention, the power detector (RF_DET) includes the output signal of the first detector (DET1) and the output signal of the second detector (DET2). And a second output adjustment unit (Vdet_Amp) that generates the RF power detection output signal (V _DET ) by being supplied with a detection voltage (Vdet_in) based on the detection output signal (ΣIdet) generated by combining Yes. In the RF power detection output signal (V _DET ) generated from the second output adjustment unit (Vdet_Amp), the first power amplifier (RF_PA_LB) is activated by the one level of the band selection signal (BAND). When the second power amplifier (RF_PA_HB) is deactivated, it is controlled to a low level, and the first power amplifier (RF_PA_LB) is deactivated by the other level of the band selection signal (BAND). When the second power amplifier (RF_PA_HB) is activated, it is controlled to a level higher than the low level (see FIGS. 1 and 4).

  According to the means of the one specific form of the present invention, the initial object can be achieved by the following operation.

  When the first power amplifier (RF_PA_LB) is deactivated and the second power amplifier (RF_PA_HB) is activated by the other level of the band selection signal (BAND), the first frequency band is higher than the first frequency band. The second RF transmission input signal (Pin_HB) in the second frequency band having a high frequency is supplied to the RF power amplifier. In the low output mode in which low transmission output power (Pout) is output, the RF power detection input signal (RFin) at the other end of the signal line (MSL) supplied to the input of the multistage amplifier (RF_Det_Amp) is also The signal level is low. Therefore, when the RF power detection input signal (RFin) is low, the plurality of cascaded amplifiers (AMP1, AMP2, AMP3) constituting the multi-stage amplifier (RF_Det_Amp) operate in a non-saturated manner and the amplified output thereof The signal level has not been clipped by the power supply voltage yet. Therefore, the output signal level of the plurality of amplifiers (AMP1, AMP2, AMP3) constituting the multistage amplifier (RF_Det_Amp) is the signal of the RF power detection input signal (RFin) at the other end of the signal line (MSL). Responds almost linearly to changes in level. As a result, a plurality of detectors (Det1, Det2,...) Constituting the first detector (DET1) to which output signals of the plurality of amplifiers (AMP1, AMP2, AMP3) constituting the multistage amplifier (RF_Det_Amp) are supplied. The detection output signal level of Det3) also changes substantially linearly in response to a change in the signal level of the RF power detection input signal (RFin) at the other end of the signal line (MSL). On the other hand, when the RF power detection input signal (RFin) is low, the detection output signal level from the second detector (DET2) connected to the input of the first output adjustment unit (Var_Att) is negligibly low. . As a result, when the RF power detection input signal (RFin) is low, the detection output signal of the first detector (DET1) is dominant as the detection output signal (ΣIdet) of the power detector (RF_DET). It is a signal component. Therefore, the signal level of the detection output signal (ΣIdet) obtained by combining the output signal of the first detector (DET1) and the output signal of the second detector (DET2) is also the RF power detection input signal (RFin). Changes substantially linearly in response to changes in the signal level.

  However, when the second RF transmission input signal (Pin_HB) in the second frequency band at a high frequency is supplied, the first RF transmission input signal (Pin_LB) in the first frequency band at a low frequency is supplied. Compared with the case where the multistage amplifier (RF_Det_Amp) is included, the plurality of amplifiers (AMP1, AMP2, AMP3) configuring the multistage amplifier (RF_Det_Amp) according to the frequency characteristics of the plurality of amplifiers (AMP1, AMP2, AMP3) configuring the multistage amplifier (RF_Det_Amp) The signal level of the output signal is lowered. Accordingly, when the second RF transmission input signal (Pin_HB) in the second frequency band having a high frequency is supplied, a plurality of detectors (Det1, Det2, Det3) constituting the first detector (DET1) are provided. The signal level of the detected output signal is also lowered.

  The outputs of the plurality of amplifiers (AMP1, AMP2, AMP3) constituting the multistage amplifier (RF_Det_Amp) when the second RF transmission input signal (Pin_HB) of the second frequency band having a high frequency is supplied as described above. The signal level of the signal is a cause of the detection output signal (ΣIdet) in the low output mode being lower when transmitting the high frequency side RF transmission frequency than when transmitting the low frequency side RF transmission frequency.

According to the means of the one specific form of the present invention, the RF power detection output signal (V _DET ) generated from the second output adjustment unit (Vdet_Amp) is the band selection signal (BAND) of the band selection signal (BAND). When the first power amplifier (RF_PA_LB) is activated and the second power amplifier (RF_PA_HB) is deactivated according to one level, the second power amplifier (RF_PA_HB) is controlled to a low level, and the other of the band selection signals (BAND) is controlled. When the first power amplifier (RF_PA_LB) is deactivated according to the level and the second power amplifier (RF_PA_HB) is activated, the level is controlled to a high level. By the level control of the RF power detection output signal (V _DET ) generated from the second output adjustment unit (Vdet_Amp), the high frequency side RF transmission frequency of the signal level of the detection output signal (ΣIdet) in the low output mode is set. It is possible to reduce the difference that occurs between transmission and transmission of the low frequency side RF transmission frequency.

  In an RF power amplifying device according to another specific form of the present invention, the first output adjustment unit (Var_Att) is a variable attenuator, and the amplitude level of the output signal of the first output adjustment unit (Var_Att). Is controlled by the amount of attenuation of the variable attenuator (see FIG. 1).

In an RF power amplifying apparatus according to another specific form of the present invention, the second output adjustment unit (Vdet_Amp) is a variable gain amplifier, and the RF power generated from the second output adjustment unit (Vdet_Amp). The level control of the detection output signal (V _DET ) is adjusted by the variable gain of the variable gain amplifier (see FIG. 1).

  In another RF power amplifying device according to another embodiment of the present invention, the variable gain amplifier of the second output adjustment unit (Vdet_Amp) includes a non-inverting input terminal (+), an inverting input terminal (−), and an output. A first amplifier circuit (OP2) having a terminal, a second amplifier circuit (OP3) having a non-inverting input terminal (+), an inverting input terminal (−), and an output terminal, a first resistor (R61), The second resistor (R62), the third resistor (R63), the fourth resistor (R64), the fifth resistor (R65), the sixth resistor (R66), the first switch, and the second switch Including. A reference voltage (Vref) is supplied to the non-inverting input terminal (+) of the first amplifier circuit (OP2), and the first resistor is connected to the inverting input terminal (−) of the first amplifier circuit (OP2). A base voltage (Voff) is supplied via (R61), the second resistor (R62) is connected between the inverting input terminal (−) and the output terminal of the first amplifier circuit (OP2), and The detection voltage (Vdet_in) generated from the detection output signal (ΣIdet) is supplied to the non-inverting input terminal (+) of the second amplification circuit (OP3), and the inversion of the second amplification circuit (OP3). The output terminal of the first amplifier circuit (OP2) is connected to the input terminal (−) through the third resistor (R63), and the inverting input terminal (−) of the second amplifier circuit (OP3). The fourth between the output terminals. Resistance (R64) is connected, a series connection of the fifth resistor (R65) and the first switch is connected in parallel with the second resistor (R62), a sixth resistor (R66) and the second switch, Are connected in parallel with the third resistor (R63). In response to the one level of the band selection signal (BAND), the first switch and the second switch are controlled to be in an off state, and in response to the other level of the band selection signal (BAND). The first switch and the second switch are controlled to be in an on state (see FIGS. 5 and 6).

  In an RF power amplifying apparatus according to another specific form of the present invention, the frequency of the second frequency band is set to approximately twice the frequency of the first frequency band. The first power amplifier (RF_PA_LB) includes a harmonic trap circuit (HTC; L101, C101) that bypasses the second harmonic of the transmission output signal (Pout_LB) in the first frequency band to the ground potential point (see FIG. 7). ).

  In an RF power amplifying apparatus according to another specific form of the present invention, the first RF transmission input signal (Pin_LB) having the first frequency band has frequency bands of GSM850 and GSM900, and the second frequency band. The second RF transmission input signal (Pin_HB) having a frequency band of DCS1800 and PCS1900.

  In an RF power amplifying apparatus according to another specific form of the present invention, the second RF transmission input signal (Pin_HB) having the second frequency band further has a frequency band of approximately 1920 MHz to 1980 MHz of WCDMA.

  In an RF power amplifier according to another specific embodiment of the present invention, the amplification elements of the first power amplifier (RF_PA_LB) and the second power amplifier (RF_PA_HB) are field effect transistors.

  In an RF power amplifier according to a more specific form of the invention, the field effect transistor is an LDMOS.

  In an RF power amplifier according to another specific embodiment of the present invention, the amplification elements of the first power amplifier (RF_PA_LB) and the second power amplifier (RF_PA_HB) are bipolar transistors.

  In an RF power amplifier according to a more specific form of the present invention, the bipolar transistor is a heterojunction type.

  In the RF power amplifying apparatus according to the most specific embodiment of the present invention, the first power amplifier (RF_PA_LB), the second power amplifier (RF_PA_HB), the coupler (CPL), and the power detector (RF_DET) The error amplifier (Err_Amp) is mounted on the RF power module package.

According to another aspect of the present invention, an RF power amplifier includes a first power amplifier (RF_PA_LB) that amplifies a first RF transmission input signal (Pin_LB) having a first frequency band, and a frequency higher than the first frequency band. A second power amplifier (RF_PA_HB) for amplifying a second RF transmission input signal (Pin_HB) having the second frequency band, transmission of the output of the first power amplifier (RF_PA_LB) and the output of the second power amplifier (RF_PA_HB) One coupler (CPL) for detecting the level of the output power (Pout) and an RF coupler detection signal (RF_cpl) from the coupler (CPL) are supplied to one end, and the RF power detection input is input to the other end. A signal line (MSL) for transmitting a signal (RFin) and the R at the other end of the signal line (MSL) Power detector for generating a RF power detection output signal _{(V DET)} by a power detection input signal (RFin) is supplied to the input terminal and (RF_DET), the power detector and the RF transmit level indication signal (Vramp) ( In response to the RF power detection output signal (V _DET ) generated from RF_DET), the transmission output power (Pout) at a level according to the level of the RF transmission level instruction signal (Vramp) is the first power amplifier. The arbitrary one of the first power amplifier (RF_PA_LB) and the second power amplifier (RF_PA_HB) is output from any one of the outputs of (RF_PA_LB) and the second power amplifier (RF_PA_HB). And an error amplifier (Err_Amp) to be controlled.

  The power detector (RF_DET) includes a multistage amplifier (RF_Det_Amp), a first detector (DET1), and a second detector (DET2). The multistage amplifier (RF_Det_Amp) amplifies the RF power detection input signal (RFin) at the other end of the signal line (MSL). A plurality of cascaded amplifiers (AMP1, AMP2, AMP3) constituting the multistage amplifier (RF_Det_Amp) are connected to input terminals of a plurality of detectors (Det1, Det2, Det3) constituting the first detector (DET1). The amplified output signal is supplied.

  The RF power detection input signal (RFin) at the other end of the signal line (MSL) is supplied to the input of the second detector (DET2), and the output signal of the first detector (DET1) and the first A detection output signal (ΣIdet) is generated by combining with the output signal of the two detectors (DET2).

  The RF power amplifier is supplied with a band selection signal (BAND) indicating whether to use either the first power amplifier (RF_PA_LB) or the second power amplifier (RF_PA_HB). At one level of the band selection signal (BAND), the first power amplifier (RF_PA_LB) is activated and the second power amplifier (RF_PA_HB) is deactivated, and at the other level of the band selection signal (BAND) The first power amplifier (RF_PA_LB) is deactivated and the second power amplifier (RF_PA_HB) is activated.

The power detector (RF_DET) is detected by the detection output signal (ΣIdet) generated by combining the output signal of the first detector (DET1) and the output signal of the second detector (DET2). An output adjustment unit (Vdet_Amp) that generates the RF power detection output signal (V _DET ) when supplied with a voltage (Vdet_in) is included. The RF power detection output signal (V _DET ) generated from the output adjustment unit (Vdet_Amp) is activated when the first power amplifier (RF_PA_LB) is activated by the one level of the band selection signal (BAND). When the second power amplifier (RF_PA_HB) is deactivated, the power amplifier is controlled to a low level, and the first power amplifier (RF_PA_LB) is deactivated by the other level of the band selection signal (BAND). When the two power amplifier (RF_PA_HB) is activated, it is controlled to a level higher than the low level (see FIGS. 1 and 4).

In an RF power amplifier according to another specific form of the present invention, the output adjustment unit (Vdet_Amp) is a variable gain amplifier, and the RF power detection output signal (Vdet_Amp) generated from the output adjustment unit (Vdet_Amp) The level control of V _DET ) is adjusted by the variable gain of the variable gain amplifier (see FIG. 1).

  The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, according to the present invention, when the transmission power of the outputs of a plurality of RF power amplifiers that transmit a plurality of RF transmission frequencies is detected by a single power detection coupler, the high-frequency side RF in the high output mode is detected. It is possible to reduce the difference in the signal level of the detection output signal that occurs between transmission at the transmission frequency and transmission at the low frequency side RF transmission frequency.

  In addition, according to the present invention, when detecting the transmission power of the outputs of a plurality of RF power amplifiers that transmit a plurality of RF transmission frequencies by using a single power detection coupler, the high frequency side RF can be used in the low output mode. It is also possible to reduce the difference in the signal level of the detection output signal that occurs between transmission at the transmission frequency and transmission at the low frequency side RF transmission frequency.

≪Configuration of RF power module≫
FIG. 1 is a circuit diagram showing an RF power amplifying apparatus mounted on a mobile phone that performs communication with a base station according to an embodiment of the present invention.

  As shown in the figure, the RF power amplifying device according to one embodiment of the present invention is configured as an RF power module incorporated in one package.

  A first RF transmission input signal Pin_LB having a first frequency band of GSM850 and GSM900 from an RF transmission / reception analog signal processing integrated circuit (hereinafter referred to as RF IC) mounted in a communication terminal device such as a mobile phone terminal; A second RF transmission input signal Pin_HB having a second frequency band of DCS 1800 and PCS 1900 having a frequency higher than one frequency band and approximately 1900 MHz of WCDMA is supplied to the RF power module.

  The RF transmission signal in the GSM850 MHz band and the RF transmission signal in the GSM 900 MHz band are supplied to the input of the first RF power amplifier RF_PA_LB as the first RF transmission input signal Pin_LB having the first frequency band. The frequency band of the RF transmission signal in the GSM850 MHz band is 824 MHz to 849 MHz, and the frequency band of the RF transmission signal in the GSM 900 MHz band is 880 MHz to 915 MHz.

  The RF transmission signal in the band of DCS 1800 MHz and the RF transmission signal in the band of CS 1900 MHz are supplied to the input of the second RF power amplifier RF_PA_HB as the second RF transmission input signal Pin_HB having the second frequency band. In addition, an RF transmission signal in a band of approximately 1900 MHz of WCDMA can also be supplied to the input of the second RF power amplifier RF_PA_HB as the second RF transmission input signal Pin_HB. The frequency band of the RF transmission signal in the DCS 1800 MHz band is 1710 MHz to 1785 MHz, the frequency band of the RF transmission signal in the PCS 1900 MHz band is 1850 MHz to 1910 MHz, and the frequency band of the RF transmission signal in the approximately 1900 MHz band of WCDMA is 1920 MHz to 1980 MHz.

  The output signal of the first RF power amplifier RF_PA_LB is supplied to the input terminal of the first output matching circuit MN_LB, the output signal of the first output matching circuit MN_LB is supplied to the input terminal of the first low-pass filter LPF_LB, and the first low-pass filter LPF_LB The output signal is supplied to one input terminal of the antenna switch ANT_SW. The output signal of the second RF power amplifier RF_PA_HB is supplied to the input terminal of the second output matching circuit MN_HB, and the output signal of the second output matching circuit MN_HB is supplied to the input terminal of the second low-pass filter LPF_HB. The output signal of LPF_HB is supplied to the other input terminal of the antenna switch ANT_SW. The selection of the two inputs of the antenna switch ANT_SW is determined by the level of the band selection signal BAND supplied from the RF IC. If the band selection signal BAND is at a high level, the first RF transmission input signal Pin_LB is selected, and the output signal of the first RF power amplifier RF_PA_LB is transmitted to the output of the antenna switch ANT_SW. If the band selection signal BAND is at a low level, the second RF transmission input signal Pin_HB is selected, and the output signal of the second RF power amplifier RF_PA_HB is transmitted to the output of the antenna switch ANT_SW.

Further, regardless of which of the first RF transmission input signal Pin_LB and the second RF transmission input signal Pin_HB is selected, a part of the transmission output power Pout that is an amplified output of the selected transmission input signal is a coupler for detecting transmission power. It is detected as an RF coupler detection signal RF_cpl from the output terminal of the CPL. The RF coupler detection signal RF_cpl is supplied to one end of the signal line MSL via the coupling capacitor Ci, whereby the RF power detection input signal RFin is transmitted to the other end of the signal line MSL. The signal line MSL is specifically configured by a transmission line formed by a microstrip line inside the RF power module. By supplying the RF power detection input signal RFin transmitted via the signal line MSL to the input terminal of the power detector RF_DET, the power detection output signal V _DET is generated from the output terminal of the power detector RF_DET. This power detection output signal V _DET is compared with the ramp voltage Vramp by the error amplifier Err_Amp, and the error amplifier Err_Amp increases the gain of the RF power amplifier so that the level of the power detection output signal V _DET matches the level of the ramp voltage Vramp. Control. This ramp voltage Vramp is supplied from a baseband signal processing unit such as a baseband LSI to the RF power amplifier via the RF IC, and is supplied to the RF power amplifier proportional to the distance between the base station and the mobile phone terminal device. Is a transmission power instruction signal. When the first RF transmission input signal Pin_LB is selected, the output signal of the error amplifier Err_Amp is supplied to the first RF power amplifier RF_PA_LB as the first APC control voltage Vapc_LB via the APC switch APC_SW. When the second RF transmission input signal Pin_HB is selected, the output signal of the error amplifier Err_Amp is supplied to the second RF power amplifier RF_PA_HB as the second APC control voltage Vapc_HB via the APC switch APC_SW.

≪Error amplifier configuration≫
As shown in FIG. 1, the error amplifier Err_Amp includes a differential amplifier DA1 whose ramp voltage Vramp is supplied to the non-inverting input terminal + and a power detection output signal V _DET from the output terminal of the power detector RF_DET as a differential amplifier DA1. Resistor R91 supplied to the inverting input terminal −, a resistor R92 connected in parallel between the inverting input terminal − and the output terminal of the differential amplifier DA1, and a phase compensation capacitor C91.

≪Power detector configuration≫
1 shows the configuration of the power detector RF_DET in one embodiment of the present invention, FIG. 5 shows the detailed circuit configuration of the power detector RF_DET shown in FIG. 1, and FIG. 6 shows the power detection shown in FIG. A more detailed circuit configuration of the device RF_DET is shown.

  As shown in FIG. 1, the power detector RF_DET includes a multistage amplifier RF_Det_Amp, a first detector DET1, and a second detector DET2. The multistage amplifier RF_Det_Amp includes a plurality of cascade-connected amplifiers AMP1, AMP2, and AMP3 that amplify the voltage of the RF power detection input signal RFin transmitted to the other end of the signal line MSL.

  Further, as shown in FIG. 5, the multistage amplifier RF_Det_Amp includes a plurality of subordinately connected amplifiers AMP1, AMP2 & AMP2A (corresponding to AMP2 in FIG. 1) that amplify the voltage of the RF power detection input signal RFin transmitted to the other end of the signal line MSL. ) And AMP3. The RF power detection input signal RFin is supplied to the input of the first amplifier AMP1 via the coupling capacitor C01, the output of the first amplifier AMP1 is supplied to the input of the second amplifier AMP2 via the coupling capacitor C02, and the second amplifier AMP2 Is supplied to the input of the third amplifier AMP3 through the coupling capacitor C03.

  Further, as shown in FIG. 6, the first amplifier AMP1 of the multistage amplifier RF_Det_Amp is composed of a coupling capacitor C01, a source-grounded N-channel MOSFET (hereinafter abbreviated as N-MOS) Q01, an input resistor R01, and a load resistor R04. The second amplifier AMP2 includes a coupling capacitor C02, a grounded N-MOS Q02, an input resistor R02, and a load resistor R05. The third amplifier AMP3 includes a coupling capacitor C03, a grounded N-MOS Q03, an input resistor R03, and a load. It is comprised by resistance R06. All gate inputs of the N-MOS Q01, Q02, and Q03 are biased by a bias voltage generated by a diode-connected N-MOS Q89 of the bias circuit Bias_Cir.

  As shown in FIG. 1, the amplification terminals of a plurality of amplifiers AMP1, AMP2, and AMP3 constituting a multistage amplifier RF_Det_Amp are connected to the input terminals of a plurality of detection circuits Det1, Det2, and Det3 constituting the first detector DET1 of the power detector RF_DET. An output signal is provided.

  Furthermore, as shown in FIG. 5, the amplified output signal of the first amplifier AMP1 of the multistage amplifier RF_Det_Amp is supplied to the input terminal of the first detection circuit Det1 of the first detector DET1 via the coupling capacitor C11, and the second detection circuit Det2 Is supplied with the amplified output signal of the second amplifier AMP2A of the multistage amplifier RF_Det_Amp through the coupling capacitor C12, and the third amplifier of the multistage amplifier RF_Det_Amp through the coupling capacitor C13 to the input terminal of the third detection circuit Det3. An amplified output signal of AMP3 is supplied. The input terminals of the first detection circuit Det1, the second detection circuit Det2, and the third detection circuit Det3 are connected to the N-MOS Q10 and the smoothing capacitor C14, in which the bias current generated by the N-MOS Q84 and Q86 is diode-connected. The bias voltage generated by the supply is supplied via the input resistors R11, R12, and R13.

  Further, as shown in FIG. 6, the first detection circuit Det1 of the first detector DET1 includes a coupling capacitor C11, a source-grounded N-MOS Q11, and an input resistor R11, and the second detection circuit Det2 includes a coupling capacitor C12. The source grounded N-MOS Q12 and the input resistor R12 are included, and the third detection circuit Det3 is configured of a coupling capacitor C13, a source grounded N-MOS Q13, and an input resistor R13. A bias voltage generated by the diode-connected N-MOS Q10 and the smoothing capacitor C14 is supplied to the gate inputs of the N-MOS Q11, Q12, and Q13 via the input resistors R11, R12, and R13. Thus, the power detection circuit RF_DET covers a wide input range from the high output mode in which the RF power amplifiers RF_PA_LB and RF_PA_HB output extremely high transmission output power Pout to the low output mode in which extremely low transmission output power is output. Therefore, the multi-stage amplifier RF_Det_Amp (AMP1, AMP2, AMP3), the first detector DET1 (Det1, Det2, Det3), and the second detector DET2 (Det4) are used. .

  The first detector DET1 (Det1, Det2, Det3) detection N-MOS Q11, Q12, Q13 and the detection N-MOS Q31 of the second detector DET2 (Det4) described later are diode-connected N-MOS Q10 and By being biased by Q30, the dead zone at the time of amplitude detection is reduced. The detection N-MOS Q11, Q12, Q13, and Q31 respond to the negative half cycle of the RF AC signal by flowing a large drain current in response to the positive half cycle of the RF AC signal supplied to the gate. The half-wave rectification is performed by shutting off. Therefore, the detection N-MOS Q11, Q12, Q13, and Q31 can use NPN bipolar transistors in addition to N-MOS, and can also use diodes.

  As shown in FIG. 1, the variable attenuator Var_Att as the first output adjustment unit of the power detector RF_DET includes a first attenuator Att_LB having a large attenuation, a second attenuator Att_HB having a small attenuation, and a band selection signal BAND. And an attenuator switch Att_SW controlled by. When the band selection signal BAND is at a high level and the first RF transmission input signal Pin_LB is selected, the attenuator switch Att_SW supplies the output of the first attenuator Att_LB having a large attenuation amount to the input of the second detector DET2. Conversely, when the band selection signal BAND is low and the second RF transmission input signal Pin_HB is selected, the attenuator switch Att_SW supplies the output of the second attenuator Att_HB having a small attenuation amount to the input of the second detector DET2.

Further, as shown in FIG. 5, the variable attenuator Var_Att of the power detector RF_DET is connected in series with the coupling capacitor C21 to which the RF power detection input signal RFin transmitted to the other end of the signal line MSL is supplied to one end. a resistor _{R ATT1, R ATT2,} a coupling capacitor C22, is composed of a N-MOS Q21 controlled by the band selection signals bAND. If the band selection signal BAND is first 1RF transmission input signal Pin_LB is selected at a high level, the N-MOS Q21 is turned on, the damping resistance _R ATT1 connected in _series, the partial pressure function of _{R ATT2,} variable attenuator Var_Att indicates a large attenuation. Conversely, when the 2RF transmission input signal Pin_HB band selection signals BAND is at the low level is selected, the N-MOS Q21 is turned off, the damping resistors connected in series _{R ATT1,} partial pressure function stops the _{R ATT2} As a result, the variable attenuator Var_Att shows a small attenuation.

  As shown in FIG. 1, the output signal of the variable attenuator Var_Att is supplied to the input terminal of the fourth detection circuit Det4 constituting the second detector DET2 of the power detector RF_DET.

  Further, as shown in FIG. 5, the output signal of the variable attenuator Var_Att is supplied to the input terminal of the fourth detection circuit Det4 of the second detector DET2, and is generated by the diode-connected N-MOS Q30 and the smoothing capacitor C31. The bias voltage is supplied via the input resistor R31.

  Further, as shown in FIG. 6, the fourth detection circuit Det4 of the second detector DET2 is composed of an N-MOS Q31 having a common source and an input resistor R31. A bias voltage generated by the diode-connected N-MOS Q30 and the smoothing capacitor C31 is supplied to the gate input of the N-MOS Q31 via the input resistor R31.

  As shown in FIG. 1, the output signal of the first detector DET1 and the output signal of the second detector DET2 of the power detector RF_DET are combined by an adder Σ.

  Further, as shown in FIG. 5, detection currents Idet1, Idet2, Idet3 and a temperature compensation circuit from the first detection circuit Det1, the second detection circuit Det2, and the third detection circuit Det3 constituting the first detector DET1 of the power detector RF_DET. The detection current Idet4 from the fourth detection circuit Det4 constituting the second detector DET2 via the TCC is combined with the adder Σ, so that a detection output signal current ΣIdet is formed from the output of the adder Σ. .

  Further, as shown in FIG. 6, the adder Σ includes P-channel MOSFETs (hereinafter abbreviated as P-MOS) Q51 and Q52 which are current mirror connected. The first detection circuit Det1 of the first detector DET1 has a detection current Idet1 that flows through the grounded N-MOS Q11, a detection current Idet2 that flows through the grounded N-MOS Q12 of the second detector DET2, and the third detection circuit Det3. The detection current Idet3 flowing through the common source N-MOS Q13 is summed at the drains of the N-MOS Q11, Q12, and Q13.

Here, a plurality of amplifiers AMP1, AMP2, and AMP3 of the multi-stage amplifier RF_Det_Amp of the power detector RF_DET shown in FIG. 6 have common source N-MOSs Q01, Q02, and Q03 and a plurality of detection circuits Det1 and Det2 of the first detector DET1. The temperature compensation of the grounded N-MOSs Q11, Q12, Q13 of Det3 and the grounded N-MOS Q31 of the fourth detection circuit Det4 of the second detector DET2 will be described. In a source-grounded N-MOS, the mutual conductance gm of the N-MOS varies due to temperature variation, and the amplification signal and detection signal vary. Therefore, it is desirable to compensate the temperature of gm. Therefore, in FIG. 6, a PN junction diode D81 having a negative temperature-dependent forward voltage is connected to the resistor R84 connected to the non-inverting input terminal + of the operational amplifier OP5 of the bias circuit Bias_Cir. On the other hand, a reference voltage obtained by dividing the band gap reference voltage V _BGR having extremely small temperature dependence by the resistors R82 and R83 from the band gap reference circuit BGR is supplied to the inverting input terminal − of the operational amplifier OP5. Even if the forward voltage of the diode D81 decreases due to the temperature rise, the drain current of the P-MOS Q83 increases so that the voltage at the non-inverting input terminal + of the operational amplifier OP5 of the bias circuit Bias_Cir does not decrease. As a result, the gate-source voltage _{Vgs Q83} of P-MOS Q83 increases, P-MOS Q84, Q86, the drain current and the N-MOSQ85 of Q88, Q87, and the drain current of Q89 is increased. As a result, the bias currents of the N-MOSs Q01, Q02, and Q03 of the plurality of amplifiers AMP1, AMP2, and AMP3 of the multi-stage amplifier RF_Det_Amp and the source grounds of the detection circuits Det1, Det2, and Det3 of the first detector DET1 The bias currents of the N-MOS Q11, Q12, and Q13 are increased, and the temperature compensation of the mutual conductance gm of the N-MOS with the common source is performed.

Further, as shown in FIG. 6, the N-MOS Q31 of the fourth detection circuit Det4 of the second detector DET2 is connected to the temperature dependence of the P-MOS Q82 controlled by the output of the operational amplifier OP4 of the bias circuit Bias_Cir. Is biased stably by a diode-connected N-MOS Q30 to which a small drain current is supplied. Since the band gap reference voltage V _BGR having extremely small temperature dependence is supplied from the band gap reference circuit BGR to the inverting input terminal − of the operational amplifier OP4 of the bias circuit Bias_Cir, the P-MOS Q81, the resistor R81, The current flowing through the is also less temperature dependent. Accordingly, since the smaller temperature dependence gate-source voltage _{Vgs Q81} of P-MOS Q81, the drain current is also the temperature dependence of the P-MOS Q82 it is small. The detection current Idet4 flowing in the N-MOS Q31 that is grounded at the source of the fourth detection circuit Det4 of the second detector DET2 is supplied to the common source of the differential N-MOS Q73 and Q74 of the temperature compensation circuit TCC. Resistors R71 and R72 and a PN junction diode D71 having a negative temperature-dependent forward voltage are connected to the gate of the N-MOS Q73, and resistors R73 and R74 are connected to the gate of the N-MOS Q74. Yes. Therefore, due to the temperature rise, the gate voltage of the N-MOS Q73 is lowered by the negative temperature-dependent forward voltage of the PN junction diode D71 rather than the gate voltage of the N-MOS Q74. As a result, the detection current Idet4 that flows through the N-MOS Q31 that is grounded at the source of the fourth detection circuit Det4 of the second detector DET2 flows less in the N-MOS Q73 and flows more in the N-MOS Q74. The component of the detection current Idet4 reflected in the drain current of the N-MOS Q74 is commonly connected to the first detector DET1 via the current mirrors of the N-MOS Q75 and Q76 and the current mirror of the P-MOS Q77 and Q78. Also supplied to the drains of the N-MOS Q11, Q12, and Q13.

  As shown in FIG. 1, the detection output signal current ΣIdet from the output of the adder Σ is converted into a detection output signal voltage Vdet_in by the current / voltage converter I / V_Conv.

  Further, as shown in FIG. 5, the current / voltage converter I / V_Conv is composed of a diode-connected N-MOS Q50.

  Further, as shown in FIG. 6, the output of the current mirror of P-MOS Q51 and Q52 to which detection currents Idet1, Idet2, Idet3 and Idet4 flowing in the drains of the commonly connected N-MOSs Q11, Q12, Q13 and Q78 are supplied. Is output to a diode-connected N-MOS Q50 of the current / voltage converter I / V_Conv.

As shown in FIG. 1, the detection output signal voltage Vdet_in from the output of the current / voltage converter I / V_Conv is amplified by a detection voltage amplifier Vdet_Amp as a second output adjustment unit, and the output power of the detection voltage amplifier Vdet_Amp is output. A detection output signal V _DET is generated. When the band selection signal BAND is high and the first RF transmission input signal Pin_LB is selected, the voltage amplification factor of the detection voltage amplifier Vdet_Amp is set to a small value. Conversely, when the band selection signal BAND is low and the second RF transmission input signal Pin_HB is selected. Is selected, the voltage amplification factor of the detection voltage amplifier Vdet_Amp is set to a large value. The detection voltage amplifier Vdet_Amp includes two operational amplifiers OP2 and OP3, resistors R61, R62, R63, R64, R65, and R66, and a voltage gain changeover switch Gv_SW. The reference voltage Vref and the offset voltage Voff through the resistor R61 are supplied to the non-inverting input terminal and the inverting input terminal of the operational amplifier OP2. The non-inverting input terminal and the inverting input terminal of the operational amplifier OP3 are supplied with the output signal of the operational amplifier OP2 through the resistor R63 and the detection output signal voltage Vdet_in from the output of the current / voltage converter I / V_Conv. Yes.

As further shown in FIG. 5, the offset voltage Voff is generated from the offset voltage generator Voff_Gen comprised of buffer amplifiers BUF2 by resistors R51, R52 and operational amplifier OP1 for dividing the bandgap reference voltage _{V BGR.} As shown in FIG. 5, when the band selection signal BAND is at a high level and the first RF transmission input signal Pin_LB is selected, the two switches of the voltage gain changeover switch Gv_SW are both controlled to be in an off state, and conversely, the band selection signal BAND When the second RF transmission input signal Pin_HB is selected at the low level, both of the two switches of the voltage gain changeover switch Gv_SW are controlled to be in the ON state. A resistance value between the resistors R61 and R64 is Z1, a resistance value between the resistors R62 and R63 is Z2, and a resistance value between the resistors R65 and R66 is Z3. The power detection output signal V _DET from the output of the detection voltage amplifier Vdet_Amp when the band selection signal BAND is high and the first RF transmission input signal Pin_LB is selected and the two switches of the voltage gain changeover switch Gv_SW are both in the OFF state It becomes as follows.

V _DET = (1+ (Z1 / Z2)) × (Vdet_in−Vref) + Voff (1)
On the other hand, the power detection output signal V _DET is output from the output of the detection voltage amplifier Vdet_Amp when the band selection signal BAND is low and the second RF transmission input signal Pin_HB is selected and the two switches of the voltage gain changeover switch Gv_SW are both in the on state. Is as follows. Z23 is a parallel resistance of the resistance value Z2 and the resistance value Z3. Therefore, the resistance value of the parallel resistance Z23 of the resistance value Z2 and the resistance value Z3 is lower than the resistance value Z2 of the resistors R62 and R63.

V _DET = (1+ (Z1 / Z23)) × (Vdet_in−Vref) + Voff (2)
Thus, equation (1) than the power detection output signal _{V DET} (2) driven power detection output signal _{V DET} is increased, the detection and band selection signals BAND is first 2RF transmission input signal Pin_HB is selected at a low level The voltage amplification factor of the voltage amplifier Vdet_Amp is set to a large value. Further, in both the equations (1) and (2), the gate-source threshold voltage Vth of the N-MOS Q50, which is the DC component of the detection output signal voltage Vdet_in from the output of the current / voltage converter I / V_Conv, This cancels out the gate-source threshold voltage Vth of the N-MOS Q85, which is the DC component of the reference voltage Vref. As a result, the power detection output signal V _DET is detected from the output of the current / voltage converter I / V_Conv to the offset voltage Voff generated from the bandgap reference voltage V _BGR and having a small temperature dependence and set with high accuracy. The AC voltage component of the signal voltage Vdet_in can be superposed.

≪Operation of RF power module≫
FIG. 2 shows that the RF coupler detection signal RF_cpl from the output terminal of the transmission power detection coupler CPL of FIG. 1 is supplied to one end of the signal line MSL via the coupling capacitor Ci, so that the other end of the signal line MSL is connected. It is a figure which shows a mode that RF power detection input signal RFin is transmitted. The upper diagram of FIG. 2 shows exactly this situation. Specifically, the signal line MSL is configured by a transmission line by a microstrip line inside the RF power module. Accordingly, the lower diagram of FIG. 2 shows an equivalent circuit of a transmission line by a microstrip line, and this transmission line has a characteristic impedance of an inductance L _Z and a capacitance C _Z.

  In addition, when the high frequency DCS1800, PCS1900, and the WCDMA second RF transmission input signal Pin_HB of about 1900 MHz are supplied, compared to the case where the low frequency GSM850 and GSM900 first RF transmission input signal Pin_LB are supplied. The loss of the coupler CPL itself for detecting the level of the transmission output power Pout is small. Therefore, as shown on the left side of the center diagram in FIG. 2, at one end of the signal line MSL, the power level PL_HB when the high-frequency second RF transmission input signal Pin_HB is supplied is the low-frequency first RF transmission input signal. It is higher than the power level PL_LB when Pin_LB is supplied. However, a high frequency second RF transmission input signal Pin_HB is supplied to the signal line MSL that transmits the RF power detection input signal RFin to the other end when the RF coupler detection signal RF_cpl from the coupler CPL is supplied to the one end. In this case, the loss is larger than the loss when the first RF transmission input signal Pin_LB having a low frequency is supplied. As a result, as shown on the right side of the center diagram in FIG. 2, at the other end of the signal line MSL, the power level PL_HB when the high-frequency second RF transmission input signal Pin_HB is supplied is the low-frequency first RF transmission. The power level is lower than the power level PL_LB when the input signal Pin_LB is supplied.

  Therefore, a decrease in the level of the detection output signal of the second detector DET2 due to the loss of the signal line MSL when the second RF transmission input signal Pin_HB having a high frequency is supplied is the power detector RF_DET in the high output mode. The detection output signal ΣIdet is a cause of lowering at the time of transmission at the high frequency side RF transmission frequency than at the time of transmission at the low frequency side RF transmission frequency. In the high output mode, the detection output signal Idet4 of the second detector DET2 is a dominant signal component as the detection output signal ΣIdet of the power detector RF_DET.

  FIG. 3 shows the detection output signals Idet1, Idet2, and Idet3 of the first detector DET1 and the detection outputs of the second detector DET2 with respect to the change in the transmission power Pout in the RF power amplifying device shown in FIGS. It is a figure which shows the change of signal Idet4. In the high output mode, the level of the transmission power Pout is high, and the level of the RF power detection input signal RFin is also high. As a result, the plurality of amplifiers AMP1, AMP2, and AMP3 constituting the multistage amplifier RF_Det_Amp are saturated, and the plurality of detection circuits Det1, Det2, and Det3 constituting the first detector DET1 are also saturated. On the other hand, even in the high output mode, the second detector DET2 having the variable attenuator Var_Att connected to the input does not saturate, and the detection current Idet4 of the second detector DET2 increases the level of the RF power detection input signal RFin. Rises almost linearly. Therefore, in the high output mode on the right side of FIG. 3, the detection output signal Idet4 of the second detector DET2 is the dominant signal component as the detection output signal ΣIdet of the power detector RF_DET.

  According to the RF power amplifying apparatus according to the embodiment of the present invention shown in FIGS. 1, 5 and 6, the first power amplifier RF_PA_LB is activated and the second power amplifier RF_PA_HB is inactivated by the high level of the band selection signal BAND. The variable attenuator Var_Att is controlled to have a large attenuation when the first power amplifier RF_PA_LB is deactivated and the second power amplifier RF_PA_HB is activated by the low level of the band selection signal BAND. Var_Att is controlled to a small attenuation. Therefore, by controlling the amount of attenuation of the variable attenuator Var_Att, the difference between the transmission of the detection output signal ΣIdet at the high frequency side RF transmission frequency and the transmission at the low frequency side RF transmission frequency in the high output mode is reduced. It becomes possible.

  FIG. 4 shows the RF power amplifying apparatus shown in FIGS. 1, 5, and 6, when the magnitude of the attenuation of the variable attenuator Var_Att is not controlled and when the RF power is changed, and the transmission power It is a figure which shows the change of the detection output signal (SIGMA) Idet of power detector RF_DET with respect to the change of Pout. 4 is a detection output signal of the power detector RF_DET at the time of transmission of the RF transmission frequency on the low frequency side when the magnitude of the attenuation amount of the variable attenuator Var_Att is not controlled in the high output mode on the right side of FIG. Yes, the loss in the signal line MSL is smaller than the detection output signal of the power detector RF_DET at the time of transmission at the high-frequency side RF transmission frequency indicated by the broken line ΣIdet_HB. In the RF power amplifying apparatus shown in FIG. 1, FIG. 5, and FIG. 6, the amount of attenuation of the variable attenuator Var_Att is controlled. Therefore, when the first power amplifier RF_PA_LB is activated and the second power amplifier RF_PA_HB is deactivated by the high level of the band selection signal BAND, the variable attenuator Var_Att is controlled to a large attenuation amount. As indicated by the arrow Var_Att, the level of the detection output signal ΣIdet_LB of the power detector RF_DET at the time of transmission at the low frequency side RF transmission frequency is the level of the detection output signal ΣIdet_HB of the power detector RF_DET at the time of transmission at the high frequency side RF transmission frequency. It has been reduced to a level close to the level.

  On the other hand, in the intermediate output mode between the high output mode and the low output mode, the level of the transmission power Pout is relatively low, and the level of the RF power detection input signal RFin is also relatively low. Therefore, the level of the detection current Idet4 of the second detector DET2 having the variable attenuator Var_Att connected to the input is negligibly low as shown in the center of FIG. On the other hand, the plurality of amplifiers AMP1, AMP2, and AMP3 constituting the multistage amplifier RF_Det_Amp have started a saturation operation. Therefore, the detection currents Idet1, Idet2, and Idet3 of the first detector DET1 increase at a relatively small increase rate with respect to the level increase of the RF power detection input signal RFin. In such an intermediate output mode, the detection currents Idet1, Idet2, and Idet3 of the first detector DET1 are the dominant signal components of the detection output signal ΣIdet of the power detector RF_DET. On the other hand, the level of the detection output signal ΣIdet in such an intermediate output mode is determined by the saturation operation of the plurality of amplifiers AMP1, AMP2, and AMP3 constituting the multistage amplifier RF_Det_Amp during transmission of the high frequency side RF transmission frequency and the low frequency side. There is no significant difference between the transmission at the RF transmission frequency.

  However, in the low output mode, the level of the transmission power Pout is low, and the level of the RF power detection input signal RFin is also low. Accordingly, the level of the detection current Idet4 of the second detector DET2 having the variable attenuator Var_Att connected to the input is negligibly low as shown on the left side of FIG. On the other hand, a plurality of amplifiers AMP1, AMP2, and AMP3 constituting the multistage amplifier RF_Det_Amp are operated in a non-saturated state, and a plurality of detection circuits Det1, Det2, and Det3 constituting the first detector DET1 are also operated in a non-saturated state. . Therefore, the detection currents Idet1, Idet2, and Idet3 of the first detector DET1 rise substantially linearly with respect to the level rise of the RF power detection input signal RFin. Therefore, in the low output mode on the left side of FIG. 3, the detection output signals Idet1, Idet2, and Idet3 of the first detector DET1 are dominant signal components as the detection output signal ΣIdet of the power detector RF_DET.

  In this low output mode, the multi-stage amplifier RF_Det_Amp is configured in comparison with the low-frequency side RF transmission frequency transmission by the frequency characteristics of the plurality of amplifiers AMP1, AMP2, and AMP3 constituting the multi-stage amplifier RF_Det_Amp during transmission of the high-frequency side RF transmission frequency. The output signal levels of the plurality of amplifiers AMP1, AMP2, and AMP3 are reduced. As a result, the levels of the detection output signals Idet1, Idet2, and Idet3 of the plurality of detection circuits Det1, Det2, and Det3 constituting the first detector DET1 are also lowered.

  According to the RF power amplifying apparatus according to the embodiment of the present invention shown in FIGS. 1, 5 and 6, when the band selection signal BAND is low level and the second RF transmission input signal Pin_HB is selected, the voltage of the detection voltage amplifier Vdet_Amp The amplification factor is set to a large value. FIG. 4 shows changes in the RF transmission frequency and transmission when the RF power amplifying apparatus shown in FIGS. 1, 5, and 6 does not implement the magnitude control of the voltage amplification factor of the detection voltage amplifier Vdet_Amp. It is a figure which shows the change of the detection output signal (SIGMA) Idet of power detector RF_DET with respect to the change of power Pout. The detection output signal (broken line ΣIdet_HB) of the power detector RF_DET at the time of transmission of the RF transmission frequency on the high frequency side when the magnitude control of the voltage amplification factor of the detection voltage amplifier Vdet_Amp is not performed in the low output mode on the left side of FIG. The output is lower than the detection output signal of the power detector RF_DET (one-dot chain line ΣIdet_LB) at the time of transmission at the low frequency side RF transmission frequency. In the RF power amplifying apparatus shown in FIGS. 1, 5 and 6, the magnitude of the voltage amplification factor of the detection voltage amplifier Vdet_Amp is controlled. That is, since the voltage amplification factor of the detection voltage amplifier Vdet_Amp is controlled to a large value at the time of transmission at the high frequency side RF transmission frequency, the power at the time of transmission at the high frequency side RF transmission frequency is indicated by an arrow Vdet_Amp on the left side of FIG. The level of the detection output signal ΣIdet_HB of the detector RF_DET is raised to a level close to the level of the detection output signal ΣIdet_LB of the power detector RF_DET at the time of transmission at the low frequency side RF transmission frequency.

≪More specific configuration of RF power module≫
FIG. 7 is a diagram for explaining in more detail the configuration of the first RF power amplifier RF_PA_LB, the second RF power amplifier RF_PA_HB, and the like of the RF power amplifier shown in FIG.

  The basic configuration of the two first RF power amplifiers RF_PA_LB and the second RF power amplifier RF_PA_HB is substantially the same. In the following, the configuration as this basic amplifier will be described.

An RF transmission input signal from an RF IC mounted on a communication terminal device such as a mobile phone terminal is amplified by a first stage RF amplifier 1st_Stg, and an RF amplification signal of the first stage RF amplifier 1st_Stg is further amplified by a next stage RF amplifier 2nd_Stg. The RF amplification signal of the next stage RF amplifier 2nd_Stg is amplified by the final stage RF amplifier 3rd_Stg, and the RF amplification signal of the final stage RF amplifier 3rd_Stg is supplied to a transmitting antenna (not shown). In the first-stage RF amplifier 1st_Stg, the RF transmission input signal is supplied to the source-grounded first-stage RF amplification element Q1 via the capacitor C1, and the drain of the first-stage RF amplification element Q1 is connected to the power supply voltage V _LVDO via the first-stage load inductor L1. . In the next-stage RF amplifier 2nd_Stg, the RF amplification signal from the first-stage RF amplifier 1st_Stg is supplied to the next-stage RF amplification element Q2 grounded via the capacitor C2, and the drain of the next-stage RF amplification element Q2 is routed through the next-stage load inductor L2. To the power supply voltage V _LVDO . In the final stage RF amplifier 3rd_Stg, the RF amplification signal from the next stage RF amplifier 2nd_Stg is supplied to the final stage RF amplification element Q3 having a common source via the capacitor C3, and the drain of the final stage RF amplification element Q3 is connected to the final stage load inductor L3. To the power supply voltage V _LVDO .

  The first stage RF amplification element Q1, the next stage RF amplification element Q2, and the last stage RF amplification element Q3 are all N-channel power MOS transistors called LD-MOS (Lateral Diffused MOS) suitable for RF amplification. It can also be replaced by other RF power amplifying elements such as heterobipolar transistors.

  The first stage bias circuit 1st_BC is connected to the gate input terminal of the first stage RF amplifying element Q1 of the grounded source of the first stage RF amplifier 1st_Stg, and the next stage RF amplifying element Q2 of the grounded source of the next stage RF amplifier 2nd_Stg is connected to the gate input terminal of the next stage. The bias circuit 2nd_BC is connected, and the final-stage bias circuit 3rd_BC is connected to the gate input terminal of the final-stage RF amplifier element Q3 that is grounded to the source of the final-stage RF amplifier 3rd_Stg. In the first stage bias circuit 1st_BC, the first bias voltage is generated by the current source I1, the diode-connected amplification element Q4, and the resistor R1. In the next-stage bias circuit 2nd_BC, a second bias voltage is generated by the current source I2, the diode-connected amplification element Q5, and the resistor R2. In the final stage bias circuit 3rd_BC, a third bias voltage is generated by the current source I3, the diode-connected amplifying element Q6, and the resistor R3.

  An APC bias control circuit APC_Bias_Cnt and an APC power supply control circuit APC_Pw_Spl_Cnt are connected to the two first RF power amplifiers RF_PA_LB and the second RF power amplifier RF_PA_HB.

In the APC bias control circuit APC_Bias_Cnt, the power detection output signal V _DET from FIG. 1 is supplied to the inverting input terminal − of the first differential amplifier DA1, while the power detection output signal V _DET from FIG. The ramp voltage Vramp from 1 is supplied. An APC (Automatic Power Control) control voltage Vapc at the output terminal of the first differential amplifier DA1 is supplied to the inverting input terminal − of the second differential amplifier DA2, while being supplied to the non-inverting input terminal + of the second differential amplifier DA2. Is supplied with an offset voltage Voffset. The offset voltage Voffset is generated when the offset current Ioffset flows through the resistor R4. When the power detection output signal V _DET is at a lower level than the lamp voltage Vramp, the APC control voltage Vapc is at a high level. When the APC control voltage Vapc becomes higher than the level of the offset voltage Voffset, the output voltage of the second differential amplifier DA2 becomes a low level. Then, the drain voltage of the P-MOS Q20 and the voltage at the non-inverting input terminal + of the second differential amplifier DA2 increase following the level of the APC control voltage Vapc. Then, the current flowing through the P-MOS Q20 and the resistor R4 increases. Further, the current I1 from the drain of the P-MOS Q21, the current I2 from the drain of the P-MOS Q22, and the current source I3 from the drain of the P-MOS Q23 also increase. These current I1, current I2, and current I3 are the current source I1 of the first stage bias circuit 1st_BC, the current source I2 of the next stage bias circuit 2nd_BC, and the current source I3 of the last stage bias circuit 3rd_BC, respectively. Therefore, when the power detection output signal V _DET is lower than the ramp voltage Vramp, the bias voltage of the gate input terminal of the first stage RF amplifier element Q1 of the first stage RF amplifier 1st_Stg and the next stage RF amplifier element Q2 of the next stage RF amplifier 2nd_Stg. And the bias voltage at the gate input terminal of the final stage RF amplifier element Q3 of the final stage RF amplifier 3rd_Stg increase. As a result, all the RF amplification gains of the first stage RF amplifier 1st_Stg, the next stage RF amplifier 2nd_Stg, and the last stage RF amplifier 3rd_Stg are increased.

In the APC power supply control circuit APC_Pw_Spl_Cnt, the APC control voltage Vapc from the output terminal of the first differential amplifier DA1 of the APC bias control circuit APC_Bias_Cnt is supplied to the inverting input terminal − of the third differential amplifier DA3, and the non-inverting input A negative feedback signal from the P-MOS Qp3 and the voltage dividing resistors R5 and R6 is supplied to the terminal +. When the power supply voltage Vdd from the battery of the mobile phone terminal is supplied to the source of the P-MOS Qp3, the APC power supply control circuit APC_Pw_Spl_Cnt uses the operating power supply voltage V _LVDO that follows the level of the APC control voltage _Vapc as the first RF power amplifier. RF_PA_LB and the second RF power amplifier RF_PA_HB are supplied. As a result, more effective APC control is performed by APC gate bias control and APC drain power supply voltage control. This APC drain power supply voltage control is an effective AM modulation method when the RF power amplifying apparatus of FIG. 7 executes AM modulation in the EDGE method or the WCDMA method.

  Further, in the RF power amplifying apparatus of FIG. 7, the drain of the N-MOS Q1 as the first-stage RF-grounded amplifier of the first RF power amplifier RF_PA_LB for the GSM850 and GSM900 has a harmonic composed of an inductor L101 and a capacitor C101. A wave trap circuit HTC is connected. The series resonance frequency of the inductor L101 and the capacitor C101 of the harmonic trap circuit HTC is set so as to substantially resonate at a frequency (1700 MHz to 1800 MHz) that is twice the frequency of the RF transmission input signal RFPin_LB of GSM850 MHz and GSM900 MHz. As a result, the second harmonic of the drain of the N-MOS Q1 as the first-stage RF amplifier of the first RF power amplifier RF_PA_LB is grounded via the extremely low series resonance impedance of the inductor L101 and the capacitor C101 of the harmonic trap circuit HTC. Bypassed to a potential point. The harmonic trap circuit HTC connected to the drain of the N-MOS Q1 as the first-stage RF grounded amplifier of the first RF power amplifier RF_PA_LB has an interference signal that is a second harmonic of the frequency of the RF transmission input signal RFPin_LB of GSM850 MHz and GSM900 MHz. This reduces the influence on the N-MOS Q1, Q2, and Q3 of the second RF power amplifier RF_PA_HB that amplifies the RF transmission input signal RFPin_HB of DCS 1800 MHz and PCS 1900 MHz.

  Although the invention made by the present inventor has been specifically described based on the embodiments, it is needless to say that the present invention is not limited thereto and can be variously modified without departing from the gist thereof.

  For example, in FIG. 1, the first output adjustment unit Var_Att may use a variable gain amplifier in addition to the variable attenuator. In FIG. 1, the second output adjustment unit Vdet_Amp may use a variable attenuator in addition to the variable gain amplifier. good.

  In FIG. 1, when a variable gain amplifier is used as the first output adjustment unit Var_Att and the band selection signal BAND is low and the second RF power amplifier RF_PA_HB is selected, the variable gain of the variable gain amplifier is changed to the band selection signal BAND. Is higher than the variable gain of the variable gain amplifier when the first RF power amplifier RF_PA_LB is selected. Then, the level of the detection output signal ΣIdet_HB of the power detector RF_DET at the time of transmission of the high frequency side RF transmission frequency in the direction opposite to the arrow Var_Att shown on the right side of FIG. It can be raised to a level close to the level of the detection output signal ΣIdet_LB of the detector RF_DET.

  Further, for example, when a variable attenuator is used as the second output adjustment unit Vdet_Amp in FIG. 1 and the band selection signal BAND is at a low level and the second RF power amplifier RF_PA_HB is selected, the variable attenuation amount of the variable attenuator is set. When the band selection signal BAND is at a high level and the first RF power amplifier RF_PA_LB is selected, the variable attenuator is set larger than the variable attenuation amount. Then, the level of the detection output signal ΣIdet_LB of the power detector RF_DET at the time of transmission at the low frequency side RF transmission frequency in the direction opposite to the arrow Vdet_Amp shown on the left side of FIG. It can be lowered to a level close to the level of the detection output signal ΣIdet_HB of the detector RF_DET.

  Further, as a power amplifying element, in addition to an LDMOS and a heterobipolar transistor, a compound semiconductor MESFET such as GaAs or InP, or a HEMT N-channel field effect transistor can be used.

FIG. 1 is a circuit diagram showing an RF power amplifying apparatus mounted on a mobile phone that performs communication with a base station according to an embodiment of the present invention. FIG. 2 shows an RF power detection input to the other end of the signal line when an RF coupler detection signal from the output terminal of the transmission power detection coupler CPL of FIG. 1 is supplied to one end of the signal line through a coupling capacitor. It is a figure which shows a mode that a signal is transmitted. FIG. 3 is a diagram showing changes in the detection output signal of the first detector and the detection output signal of the second detector DET2 with respect to the change in transmission power in the RF power amplifying apparatus shown in FIGS. is there. FIG. 4 shows a case where the RF power amplifying apparatus shown in FIG. 1, FIG. 5 and FIG. It is a figure which shows the change of the detection output signal of a power detector with respect to a change. FIG. 5 is a circuit diagram showing a detailed circuit configuration of the power detector of the RF power amplifier according to the embodiment of the present invention shown in FIG. FIG. 6 is a circuit diagram showing a more detailed circuit configuration of the power detector of the RF power amplifying apparatus according to one embodiment of the present invention shown in FIG. FIG. 7 is a diagram for explaining the configuration of the first RF power amplifier, the second RF power amplifier, and the like of the RF power amplifier shown in FIG. 1 in more detail.

Explanation of symbols

Pin_LB First RF transmission input signal having a first frequency band Pin_HB Second RF transmission input signal having a second frequency band RF_PA_LB First power amplifier RF_PA_HB Second power amplifier CPL Coupler Pout Transmission output power RF_cpl RF coupler detection signal MSL Signal line RFin RF Power detection input signal RF_DET Power detector V _DET RF power detection output signal Vramp RF transmission level instruction signal Err_Amp Error amplifier RF_Det_Amp Multistage amplifier AMP1, AMP2, AMP3 Multiple amplifiers DET1 First detector DET2 Second detector Det1, Det2, Det3 A plurality of detectors ΣIdet detection output signal Vdet_in detection voltage BAND band selection signal Var_Att first output adjustment unit Vdet_Amp first Output adjustment unit

Claims (24)

A first power amplifier for amplifying a first RF transmission input signal having a first frequency band;
A second power amplifier for amplifying a second RF transmission input signal having a second frequency band having a frequency higher than the first frequency band;
One coupler for detecting the level of transmission output power of the output of the first power amplifier and the output of the second power amplifier;
A signal line for transmitting an RF power detection input signal to the other end by supplying an RF coupler detection signal from the coupler to the one end;
A power detector that generates an RF power detection output signal by supplying the RF power detection input signal at the other end of the signal line to an input terminal;
In response to the RF transmission level indication signal and the RF power detection output signal generated from the power detector, the transmission output power at a level according to the level of the RF transmission level indication signal is the first power amplifier and the An error amplifier that controls the arbitrary one of the first power amplifier and the second power amplifier so as to be output from any one of the outputs of the second power amplifier;
The power detector includes a multistage amplifier, a first detector, and a second detector, and the multistage amplifier amplifies the RF power detection input signal at the other end of the signal line, and Amplified output signals of a plurality of subordinately connected amplifiers constituting the multistage amplifier are supplied to input terminals of a plurality of detectors constituting the detector, and the other of the signal lines is inputted to the second detector. The RF power detection input signal at the end is supplied, and a detection output signal is generated by combining the output signal of the first detector and the output signal of the second detector,
The first power amplifier is activated and the second power amplifier is deactivated at one level of a band selection signal indicating whether to use the first power amplifier or the second power amplifier. At the other level of the selection signal, the first power amplifier is deactivated and the second power amplifier is activated;
A first output adjustment unit controlled by the band selection signal is connected between the input of the second detector and the other end of the signal line,
When the first power amplifier is activated and the second power amplifier is deactivated by the one level of the band selection signal, the output signal of the first output adjustment unit is controlled to a low amplitude level, When the first power amplifier is deactivated and the second power amplifier is activated by the other level of the band selection signal, the output signal of the first output adjustment unit has an amplitude higher than the low amplitude level. RF power amplifier controlled by level. The power detector is supplied with a detection voltage based on the detection output signal generated by combining the output signal of the first detector and the output signal of the second detector, and thereby the RF power detection output A second output conditioning unit for generating a signal;
The RF power detection output signal generated from the second output adjustment unit is activated when the first power amplifier is activated and the second power amplifier is deactivated according to the one level of the band selection signal. Is controlled to a low level, and is controlled to a level higher than the low level when the first power amplifier is deactivated and the second power is activated by the other level of the band selection signal. The RF power amplifying device according to claim 1.   The first output adjustment unit is a variable attenuator, and the control of the amplitude level of the output signal of the first output adjustment unit is adjusted by the attenuation amount of the variable attenuator. An RF power amplifying device according to claim 1.   The second output adjustment unit is a variable gain amplifier, and the level control of the RF power detection output signal generated from the second output adjustment unit is adjusted by a variable gain of the variable gain amplifier. Item 4. The RF power amplifying apparatus according to any one of Items 1 to 3. The variable gain amplifier of the second output adjustment unit includes a first amplification circuit having a non-inverting input terminal, an inverting input terminal, and an output terminal, and a second amplification having a non-inverting input terminal, an inverting input terminal, and an output terminal. A circuit, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a first switch, and a second switch;
A reference voltage is supplied to the non-inverting input terminal of the first amplifier circuit, and a base voltage is supplied to the inverting input terminal of the first amplifier circuit via the first resistor. The second resistor is connected between the inverting input terminal and the output terminal;
The non-inverting input terminal of the second amplifier circuit is supplied with the detection voltage generated from the detection output signal, and the inverting input terminal of the second amplifier circuit is supplied with the first resistor via the third resistor. The output terminal of the amplifier circuit is connected, and the fourth resistor is connected between the inverting input terminal and the output terminal of the second amplifier circuit,
A series connection of the fifth resistor and the first switch is connected in parallel with the second resistor, a series connection of the sixth resistor and the second switch is connected in parallel with a third resistor,
The first switch and the second switch are controlled to be in an off state in response to the one level of the band selection signal, and the first switch and the first switch in response to the other level of the band selection signal. The RF power amplifying apparatus according to claim 4, wherein the two switches are controlled to be in an on state. The frequency of the second frequency band is set to approximately twice the frequency of the first frequency band,
4. The RF power amplification according to claim 1, wherein the first power amplifier includes a harmonic trap circuit that bypasses a second harmonic of the transmission output signal of the first frequency band to a ground potential point. 5. apparatus.   The first RF transmission input signal having the first frequency band has a frequency band of GSM850 and GSM900, and the second RF transmission input signal having the second frequency band has a frequency band of DCS1800 and PCS1900. The RF power amplifying device according to claim 3.   The RF power amplification device according to claim 7, wherein the second RF transmission input signal having the second frequency band further has a frequency band of approximately 1920 MHz to 1980 MHz of WCDMA.   9. The RF power amplifying apparatus according to claim 1, wherein the amplifying elements of the first power amplifier and the second power amplifier are field effect transistors. 10.   The RF power amplifier according to claim 9, wherein the field effect transistor is an LDMOS.   9. The RF power amplifying apparatus according to claim 1, wherein amplification elements of the first power amplifier and the second power amplifier are bipolar transistors.   The RF power amplifier according to claim 11, wherein the bipolar transistor is a heterojunction type.   The first power amplifier, the second power amplifier, the coupler, the power detector, and the error amplifier are mounted in a package of an RF power module. An RF power amplifying device according to claim 1. A first power amplifier for amplifying a first RF transmission input signal having a first frequency band;
A second power amplifier for amplifying a second RF transmission input signal having a second frequency band having a frequency higher than the first frequency band;
One coupler for detecting the level of transmission output power of the output of the first power amplifier and the output of the second power amplifier;
A signal line for transmitting an RF power detection input signal to the other end by supplying an RF coupler detection signal from the coupler to the one end;
A power detector that generates an RF power detection output signal by supplying the RF power detection input signal at the other end of the signal line to an input terminal;
In response to the RF transmission level indication signal and the RF power detection output signal generated from the power detector, the transmission output power at a level according to the level of the RF transmission level indication signal is the first power amplifier and the An error amplifier that controls the arbitrary one of the first power amplifier and the second power amplifier so as to be output from any one of the outputs of the second power amplifier;
The power detector includes a multistage amplifier, a first detector, and a second detector, and the multistage amplifier amplifies the RF power detection input signal at the other end of the signal line, and Amplified output signals of a plurality of subordinately connected amplifiers constituting the multistage amplifier are supplied to input terminals of a plurality of detectors constituting the detector, and the other of the signal lines is inputted to the second detector. The RF power detection input signal at the end is supplied, and a detection output signal is generated by combining the output signal of the first detector and the output signal of the second detector,
The first power amplifier is activated and the second power amplifier is deactivated at one level of a band selection signal indicating whether to use the first power amplifier or the second power amplifier. At the other level of the selection signal, the first power amplifier is deactivated and the second power amplifier is activated;
The power detector is supplied with a detection voltage based on the detection output signal generated by combining the output signal of the first detector and the output signal of the second detector, and thereby the RF power detection output Including an output conditioning unit for generating a signal;
The RF power detection output signal generated from the output adjustment unit is low when the first power amplifier is activated and the second power amplifier is deactivated by the one level of the band selection signal. RF power controlled to a level higher than the low level when the first power amplifier is deactivated and the second power is activated by the other level of the band selection signal Amplification equipment.   The RF power amplification according to claim 14, wherein the output adjustment unit is a variable gain amplifier, and the level control of the RF power detection output signal generated from the output adjustment unit is adjusted by a variable gain of the variable gain amplifier. apparatus. The variable gain amplifier of the output adjustment unit includes a first amplifier circuit having a non-inverting input terminal, an inverting input terminal, and an output terminal, and a second amplifier circuit having a non-inverting input terminal, an inverting input terminal, and an output terminal. A first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a first switch, and a second switch,
A reference voltage is supplied to the non-inverting input terminal of the first amplifier circuit, and a base voltage is supplied to the inverting input terminal of the first amplifier circuit via the first resistor. The second resistor is connected between the inverting input terminal and the output terminal;
The non-inverting input terminal of the second amplifier circuit is supplied with the detection voltage generated from the detection output signal, and the inverting input terminal of the second amplifier circuit is supplied with the first resistor via the third resistor. The output terminal of the amplifier circuit is connected, and the fourth resistor is connected between the inverting input terminal and the output terminal of the second amplifier circuit,
A series connection of the fifth resistor and the first switch is connected in parallel with the second resistor, a series connection of the sixth resistor and the second switch is connected in parallel with a third resistor,
The first switch and the second switch are controlled to be in an off state in response to the one level of the band selection signal, and the first switch and the first switch in response to the other level of the band selection signal. The RF power amplifying device according to any one of claims 14 to 15, wherein the two switches are controlled to be in an on state. The frequency of the second frequency band is set to approximately twice the frequency of the first frequency band,
The RF power amplification according to any one of claims 14 to 16, wherein the first power amplifier includes a harmonic trap circuit that bypasses a second harmonic of the transmission output signal of the first frequency band to a ground potential point. apparatus.   The first RF transmission input signal having the first frequency band has a frequency band of GSM850 and GSM900, and the second RF transmission input signal having the second frequency band has a frequency band of DCS1800 and PCS1900. The RF power amplifying device according to claim 17.   The RF power amplifier according to claim 18, wherein the second RF transmission input signal having the second frequency band further has a frequency band of approximately 1920 MHz to 1980 MHz of WCDMA.   The RF power amplifier according to any one of claims 14 to 19, wherein amplification elements of the first power amplifier and the second power amplifier are field effect transistors.   The RF power amplifier according to claim 20, wherein the field effect transistor is an LDMOS.   The RF power amplifier according to any one of claims 14 to 19, wherein amplification elements of the first power amplifier and the second power amplifier are bipolar transistors.   The RF power amplifier according to claim 22, wherein the bipolar transistor is a heterojunction type.   The first power amplifier, the second power amplifier, the coupler, the power detector, and the error amplifier are mounted on a package of an RF power module. An RF power amplifying device according to claim 1.

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