JP2007325046A - Electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve an electronic component capable of adjusting the coupling strength between adjacent resonators easily. <P>SOLUTION: The electronic component 1 has: a multilayer board 20; and three resonators 11, 12, 13 composed by using not less than one conductor layer in the multilayer board 20 each. The three resonators 11, 12, 13 function as a band-pass filter. The three resonators 11, 12, 13 are arranged at places that differ mutually for a lamination direction T on the multilayer board 20 and do not overlap mutually when they are seen from a direction vertical to sides 20C, 20D arranged at both the ends of the lamination direction T. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electronic component having a plurality of resonators.

  Bluetooth communication devices and wireless LAN (local area network) communication devices are strongly demanded to be smaller and thinner, and therefore, electronic components used therefor are required to be smaller and thinner. One of the electronic components in the communication apparatus is a band-pass filter that filters a received signal. This band pass filter is also required to be small and thin. Therefore, as a band-pass filter that can correspond to the frequency band used in the communication device and can be reduced in size and thickness, for example, as shown in Patent Documents 1 to 3, it is configured using a conductor layer in a multilayer substrate. A multilayer filter including a plurality of resonators has been proposed. In this filter, adjacent resonators are electromagnetically coupled.

  In the filter described in Patent Document 1, three resonance electrodes are arranged side by side on the same dielectric layer.

  In the filter described in Patent Document 2, each of the two resonators has a plurality of resonance electrode bodies stacked in the stacking direction. The two resonators are arranged side by side in a direction parallel to the surface of each layer constituting the laminated substrate.

  Patent Document 3 describes a filter in which a plurality of resonator electrodes are arranged in the stacking direction, and a filter in which a plurality of resonator electrodes are arranged on the same dielectric layer. Patent Document 3 describes a technique in which a dielectric between two adjacent resonator electrodes is made of a material having a lower dielectric constant than other dielectrics.

JP 7-226602 A JP 2003-218603 A JP 2002-261504 A

  In the conventional multilayer filter, the distance between adjacent resonators must be shortened in order to reduce the size and thickness. Then, the coupling between the adjacent resonators becomes too strong, which causes a problem that it becomes difficult to realize a desired filter characteristic.

  In Patent Document 3, as described above, a technique is described in which the dielectric between two adjacent resonator electrodes is made of a material having a lower dielectric constant than the other dielectrics. However, with this technique alone, it is difficult to freely adjust the magnitude of coupling between adjacent resonators.

  The present invention has been made in view of such problems, and an object of the present invention is to provide an electronic component having a plurality of resonators that can easily adjust the magnitude of coupling between adjacent resonators. It is to provide.

  The electronic component of the present invention includes a plurality of dielectric layers and a plurality of conductor layers that are stacked, a multilayer substrate having first and second surfaces disposed at both ends in the stacking direction of each layer, And a plurality of resonators configured using one or more conductor layers in the substrate.

  In the electronic component of the present invention, the plurality of resonators are arranged at positions that are different from each other in the stacking direction and do not overlap each other when viewed from a direction perpendicular to the first and second surfaces. . Thereby, in the electronic component of the present invention, it is easy to adjust the magnitude of coupling between adjacent resonators.

  In the electronic component of the present invention, the multilayer substrate further has a third surface perpendicular to the first and second surfaces, and the electronic component is further disposed on the third surface as an electromagnetic shield. A functioning shield layer may be provided.

  In the electronic component of the present invention, the multilayer substrate includes a plurality of first dielectric layers and a second dielectric layer arranged between two adjacent first dielectric layers as dielectric layers. And may be included. In this case, the first and second dielectric layers have different dielectric constants, and the second dielectric layer is disposed at a position sandwiched between the two resonators. The dielectric constant of the second dielectric layer may be smaller than the first dielectric constant.

  In addition, the electronic component of the present invention further includes an input terminal and an output terminal arranged on the outer peripheral portion of the multilayer substrate, and the plurality of resonators are provided between the input terminal and the output terminal on the circuit configuration, A band-pass filter function may be realized.

  In the electronic component of the present invention, the plurality of resonators are arranged at positions that are different from each other in the stacking direction and do not overlap each other when viewed from a direction perpendicular to the first and second surfaces. . Thereby, according to the electronic component of this invention, there exists an effect that the magnitude | size of the coupling | bonding between adjacent resonators can be adjusted easily.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, a circuit configuration of an electronic component according to an embodiment of the present invention will be described with reference to FIG. The electronic component 1 according to the present embodiment has a function of a band pass filter. As shown in FIG. 4, the electronic component 1 includes an input terminal 2, an output terminal 3, and three resonators 11, 12, and 13 each composed of a TEM line. The electronic component 1 further includes a capacitor 14 provided between one end of the resonator 11 and the ground, a capacitor 15 provided between one end of the resonator 12 and the ground, and one end of the resonator 13 and the ground. And a capacitor 16 provided between the two. The input terminal 2 is connected to one end of the resonator 11. The output terminal 3 is connected to one end of the resonator 13. The other ends of the resonators 11, 12, and 13 are connected to the ground. The TEM line is a transmission line that transmits a TEM wave (Transverse Electromagnetic Wave), which is an electromagnetic wave in which both an electric field and a magnetic field exist only in a cross section perpendicular to the traveling direction of the electromagnetic wave.

  The resonators 11, 12, and 13 are provided between the input terminal 2 and the output terminal 3 in terms of circuit configuration, and realize the function of a bandpass filter. Each of the resonators 11, 12, and 13 is a quarter wavelength resonator in which one end is opened and the other end is short-circuited. The resonator 12 is disposed between the resonator 11 and the resonator 13. Adjacent resonators 11 and 12 are electromagnetically coupled, and adjacent resonators 12 and 13 are also electromagnetically coupled.

  In the electronic component 1 according to the present embodiment, when a signal is input to the input terminal 2, a signal having a frequency within a predetermined frequency band is selectively configured using the resonators 11, 12, and 13. The signal passes through the bandpass filter and is output from the output terminal 3.

  Next, the structure of the electronic component 1 will be described with reference to FIGS. FIG. 1 is a perspective view showing the main part of the electronic component 1. FIG. 2 is a perspective view showing an external appearance of the electronic component 1. FIG. 3 is a cross-sectional view showing a cross section parallel to the upper surface of the electronic component 1.

  As shown in FIG. 2, the electronic component 1 includes a laminated substrate 20 for integrating the components of the electronic component 1. As will be described in detail later, the laminated substrate 20 includes a plurality of laminated dielectric layers and a plurality of conductor layers. The resonators 11, 12, and 13 are configured using one or more conductor layers in the multilayer substrate 20. The capacitors 14, 15, and 16 are configured using a conductor layer and a dielectric layer in the multilayer substrate 20.

  As shown in FIG. 2, the laminated substrate 20 has a rectangular parallelepiped shape having an upper surface 20A, a bottom surface 20B, and four side surfaces 20C to 20F. The top surface 20A and the bottom surface 20B are parallel, the side surfaces 20C and 20D are also parallel, and the side surfaces 20E and 20F are also parallel. The side surfaces 20C to 20F are perpendicular to the top surface 20A and the bottom surface 20B.

  The side surface 20C is provided with an input terminal 22 and two ground terminals 24 and 25 arranged on both sides thereof. The side surface 20D is provided with an output terminal 23 and two ground terminals 26 and 27 arranged on both sides thereof. The input terminal 22 corresponds to the input terminal 2 in FIG. 4, and the output terminal 23 corresponds to the output terminal 3 in FIG. The ground terminals 24, 25, 26, and 27 are connected to the ground.

  In the laminated substrate 20, the direction perpendicular to the side surfaces 20C and 20D is the laminated direction of the conductor layer and the dielectric layer. 1 to 3, an arrow with a symbol T represents a stacking direction. Accordingly, the side surfaces 20C and 20D are surfaces disposed at both ends in the stacking direction. The side surface 20C corresponds to the first surface in the present invention, and the side surface 20D corresponds to the second surface in the present invention. The top surface 20A and the bottom surface 20B perpendicular to the side surfaces 20C and 20D correspond to the third surface in the present invention. In the following description, the side surface 20C is also referred to as a first surface, the side surface 20D is also referred to as a second surface, and the top surface 20A and the bottom surface 20B are also referred to as a third surface.

  Shield layers 28 and 29 functioning as electromagnetic shields are disposed on the top surface 20A and the bottom surface 20B, respectively. The ground terminals 24 to 27 are connected to the shield layers 28 and 29.

  The electronic component 1 is mounted on the mounting substrate such that the bottom surface 20B of the multilayer substrate 20 is in contact with the mounting substrate.

  Next, with reference to FIGS. 5 to 7, the dielectric layer and the conductor layer in the multilayer substrate 20 will be described in detail. Here, the side surface 20C side of the multilayer substrate 20 will be described as the upper side, and the side surface 20D side of the multilayer substrate 20 will be described as the lower side. 5A to 5E respectively show the top surfaces of the first to fifth dielectric layers from the top. 6A to 6F respectively show the top surfaces of the sixth to eleventh dielectric layers from the top. 7A to 7E show the top surfaces of the 12th to 16th dielectric layers from the top, respectively. In FIG. 6, (f) shows the 16th dielectric layer from the top and the conductor layer therebelow as viewed from above.

  The upper surface of the first dielectric layer 31 shown in FIG. 5A is the side surface 20C of the multilayer substrate 20. On the upper surface of the dielectric layer 31, an input terminal conductor layer 311 and two ground conductor layers 312 and 313 disposed on both sides thereof are formed. The input terminal conductor layer 311 is connected to the input terminal 22. The ground conductor layer 312 is connected to the ground terminal 24 and the shield layers 28 and 29. The ground conductor layer 313 is connected to the ground terminal 25 and the shield layers 28 and 29. The dielectric layer 31 has a through hole 314 connected to the input terminal conductor layer 311.

  In the second dielectric layer 32 shown in FIG. 5B, a through hole 321 connected to the through hole 314 is formed.

  A resonator conductor layer 331 is formed on the top surface of the third dielectric layer 33 shown in FIG. The conductor layer 331 has a rectangular resonance part 331a and a connection part 331b extending from the vicinity of one end of the resonance part 331a. The other end of the resonance part 331 a is connected to the shield layer 28. The dielectric layer 33 has a through hole 332 connected to the connecting portion 331b. A through hole 321 is connected to the through hole 332.

  A capacitor conductor layer 341 is formed on the upper surface of the fourth dielectric layer 34 shown in FIG. One end of the conductor layer 341 is connected to the shield layer 29. In addition, a through hole 342 connected to the through hole 332 is formed in the dielectric layer 34.

  A resonator conductor layer 351 is formed on the upper surface of the fifth dielectric layer 35 shown in FIG. The conductor layer 351 has a rectangular resonance part 351a and a connection part 351b extending from the vicinity of one end of the resonance part 351a. The other end of the resonance part 351 a is connected to the shield layer 28. The dielectric layer 35 has a through hole 352 connected to the connection portion 351b. A through hole 342 is connected to the through hole 352.

  The resonator 11 illustrated in FIG. 4 is configured by resonating units 331a and 351a. The capacitor 14 shown in FIG. 4 includes resonance parts 331a and 351a, a conductor layer 341, and dielectric layers 33 and 34.

  No conductor layer is formed on each upper surface of the sixth dielectric layer 36 shown in FIG. 6A and the seventh dielectric layer 37 shown in FIG. 6B.

  A resonator conductor layer 381 is formed on the upper surface of the eighth dielectric layer 38 shown in FIG. One end of the conductor layer 381 is connected to the shield layer 28.

  A capacitor conductor layer 391 is formed on the top surface of the ninth dielectric layer 39 shown in FIG. One end of the conductor layer 391 is connected to the shield layer 29.

  A resonator conductor layer 401 is formed on the top surface of the tenth dielectric layer 40 shown in FIG. One end of the conductor layer 401 is connected to the shield layer 28.

  The resonator 12 shown in FIG. 4 is composed of conductor layers 381 and 401. The capacitor 15 shown in FIG. 4 includes conductor layers 381, 391, 401 and dielectric layers 38, 39.

  No conductor layer is formed on the top surfaces of the eleventh dielectric layer 41 shown in FIG. 6 (f) and the twelfth dielectric layer 42 shown in FIG. 7 (a).

  A resonator conductor layer 431 is formed on the top surface of the thirteenth dielectric layer 43 shown in FIG. 7B. The conductor layer 431 has a rectangular resonance part 431a and a connection part 431b extending from the vicinity of one end of the resonance part 431a. The other end of the resonance part 431 a is connected to the shield layer 28. The dielectric layer 43 has a through hole 432 connected to the connection portion 431b.

  A capacitor conductor layer 441 is formed on the top surface of the fourteenth dielectric layer 44 shown in FIG. One end of the conductor layer 441 is connected to the shield layer 29. In addition, a through hole 442 connected to the through hole 432 is formed in the dielectric layer 44.

  A resonator conductor layer 451 is formed on the top surface of the fifteenth dielectric layer 45 shown in FIG. The conductor layer 451 has a rectangular resonance part 451a and a connection part 451b extending from the vicinity of one end of the resonance part 451a. The other end of the resonance part 451a is connected to the shield layer 28. The dielectric layer 45 has a through hole 452 connected to the connection portion 451b. A through hole 442 is connected to the through hole 452.

  The resonator 13 shown in FIG. 4 is configured by resonating units 431a and 451a. The capacitor 16 shown in FIG. 4 includes resonance parts 431a and 451a, a conductor layer 441, and dielectric layers 43 and 44.

  A through hole 460 connected to the through hole 452 is formed in the sixteenth dielectric layer 46 shown in FIG.

  As shown in FIG. 7F, the output terminal conductor layer 461 and two ground conductor layers 462 and 463 arranged on both sides thereof are formed on the lower surface of the dielectric layer 46. The output terminal conductor layer 461 is connected to the output terminal 23. The ground conductor layer 462 is connected to the ground terminal 26 and the shield layers 28 and 29. The ground conductor layer 463 is connected to the ground terminal 27 and the shield layers 28 and 29. A through hole 460 is connected to the conductor layer 461. The lower surface of the dielectric layer 46 becomes the side surface 20D of the multilayer substrate 20.

  The dielectric layers 31 to 46 and the conductor layer shown in FIGS. 5 to 7 are laminated to form a laminated body. The shield layers 28 and 29 shown in FIG. 2 are formed on two surfaces of the outer peripheral surface of the stacked body that are perpendicular to the stacking direction and parallel to each other. Further, terminals 22 to 27 are formed on the laminated body so as to be in contact with the conductor layers 311, 461, 312, 313, 462, and 463, respectively.

  Of the dielectric layers 31 to 46 shown in FIGS. 5 to 7, the dielectric layers 36 and 41 have a dielectric constant different from the dielectric constants of the other dielectric layers. The dielectric constants of the dielectric layers 36 and 41 are preferably smaller than the dielectric constants of the other dielectric layers. Specifically, for example, the relative dielectric constants of the dielectric layers 36 and 41 are in the range of 3 to 50, and the relative dielectric constants of the other dielectric layers are in the range of 60 to 100. The dielectric layers 36 and 41 correspond to the second dielectric layer in the present invention, and the other dielectric layers correspond to the first dielectric layer in the present invention.

  As shown in FIGS. 1 and 3, the resonators 11, 12, and 13 are positions different from each other in the stacking direction T in the stacked substrate 20, and include the side surface 20 </ b> C as the first surface and the second surface as the second surface. They are arranged at positions that do not overlap each other when viewed from a direction perpendicular to the side surface 20D.

  As shown in FIG. 3, the multilayer substrate 20 includes a plurality of first dielectric layers (dielectric layers other than the dielectric layers 36 and 41) as dielectric layers and two adjacent first first layers. And second dielectric layers 36 and 41 disposed between the dielectric layers. The dielectric layer 36 is disposed at a position between the resonators 11 and 12. The dielectric layer 41 is disposed at a position between the resonators 12 and 13.

  In the present embodiment, as the laminated substrate 20, various materials such as a material using a resin, ceramic, or a composite material of both can be used as the material of the dielectric layer. However, as the laminated substrate 20, it is particularly preferable to use a low-temperature co-fired ceramic multilayer substrate having excellent high-frequency characteristics.

  As described above, electronic component 1 according to the present embodiment includes a plurality of dielectric layers and a plurality of conductor layers stacked, and first surface 20C disposed at both ends in the stacking direction of each layer. And a multilayer substrate 20 having a second surface 20D, and a plurality of resonators 11, 12, and 13 each configured by using one or more conductor layers in the multilayer substrate 20. The electronic component 1 further includes an input terminal 22 and an output terminal 23 arranged on the outer peripheral portion of the multilayer substrate 20. The resonators 11, 12, and 13 are provided between the input terminal 22 and the output terminal 23 in terms of circuit configuration, and realize the function of a bandpass filter.

  In the present embodiment, the resonators 11, 12, and 13 are positions different from each other in the stacking direction T in the stacked substrate 20 and viewed from a direction perpendicular to the first surface 20 </ b> C and the second surface 20 </ b> D. Sometimes they are placed in positions that do not overlap. Here, consider the following two comparative examples. In the first comparative example, the resonators 11, 12, and 13 are at the same position in the stacking direction T and do not overlap each other when viewed from the direction perpendicular to the first surface 20C and the second surface 20D. It is a case where it is arranged at a position. In the second comparative example, the resonators 11, 12, and 13 are at positions different from each other in the stacking direction T in the stacked substrate 20 and viewed from a direction perpendicular to the first surface 20C and the second surface 20D. This is a case where they are arranged at positions overlapping each other. According to the present embodiment, it is possible to increase the distance between adjacent resonators as compared with the first and second comparative examples.

  Here, in order to facilitate the comparison between the present embodiment and the first and second comparative examples, in the present embodiment and the first comparative example, a horizontal direction (lamination between two adjacent resonators). The distance in the direction orthogonal to the direction) is D1, and in the present embodiment and the second comparative example, the distance in the stacking direction between two adjacent resonators is D2. In this case, the distance between two adjacent resonators in the first comparative example is D1, and the distance between two adjacent resonators in the second comparative example is D2. When the distance between two adjacent resonators in the present embodiment is D3, D3 is expressed by the following equation.

D3 = √ (D1 ² + D2 ² )

  It is clear that D3 is larger than both D1 and D2. According to this embodiment, when the size of the laminated substrate 20 is made constant, the distance between two adjacent resonators can be made the longest. Thereby, according to this Embodiment, when the magnitude | size of the laminated substrate 20 is made constant, it is possible to minimize the magnitude | size of the coupling | bonding between two adjacent resonators.

  In the present embodiment, D1 is in the range of 0.2 to 1.0 mm, for example, D2 is in the range of 0.08 to 0.5 mm, and D3 is in the range of 0.2 to 1.2 mm, for example. Is within the range.

  As described above, according to the present embodiment, since the distance between adjacent resonators can be increased, the range in which the distance between adjacent resonators can be adjusted by design is increased. Therefore, according to the present embodiment, the magnitude of coupling between adjacent resonators can be easily adjusted.

  Further, in the present embodiment, the dielectric constant of the dielectric layer 36 disposed at a position sandwiched between the resonators 11 and 12 and the dielectric constant of the dielectric layer 41 disposed at a position sandwiched between the resonators 12 and 13. Is different from the dielectric constant of other dielectric layers. Therefore, according to the present embodiment, by selecting the dielectric constants of the dielectric layers 36 and 41, the size of the coupling between the adjacent resonators 11 and 12 and the coupling between the adjacent resonators 12 and 13 are determined. The size can be easily adjusted. In particular, by making the dielectric constants of the dielectric layers 36 and 41 smaller than the dielectric constants of the other dielectric layers, the dielectric constants of the dielectric layers 36 and 41 are equal to the dielectric constants of the other dielectric layers. Thus, the size of the coupling between the resonators 11 and 12 and the size of the coupling between the resonators 12 and 13 can be reduced, respectively.

Next, the advantage of reducing the magnitude of coupling between adjacent resonators will be described with reference to the results of experiments. First, the relationship among the distance between adjacent resonators, the magnitude of coupling between adjacent resonators, and the resonance frequency of each resonator will be described with reference to the results of the first experiment. In the first experiment, two resonators are arranged on the same dielectric layer, the distance d (mm) between the two resonators, the magnitude of coupling between the two resonators, and the two resonators. The relationship with the resonance frequency of was investigated. The width of each resonator is 100 μm, and the length of each resonator is 1.0 mm. If two resonators are electromagnetically coupled, the two resonators are both, will have a resonant frequency f _o of the resonance frequency f _e and the odd mode of the even mode. The magnitude of coupling between the two resonators is represented by the coupling coefficient k. The greater the coupling coefficient k, the greater the coupling between the two resonators. The coupling coefficient k is expressed by the following equation using the resonance frequencies f _e and f _o .

_{k = 2 | f e -f o} | / (f e + f o)

  The results of the first experiment are shown in Table 1 below and FIG.

Table 1 and as can be seen from FIG. 8, as the distance d between the two resonators is decreased, the coupling coefficient k increases, the difference between the resonance frequency f _o of the resonance frequency f _e and the odd mode of even mode is large . The band-pass filter comprising two resonators, the resonant frequency f _e, the difference f _o is the passband width is increased significantly, on the contrary, the resonance frequency f _e, and the pass band width is small difference f _o decreases Become. Therefore, in order to realize a bandpass filter having a narrow passband width, it is necessary to increase the distance d between the two resonators and decrease the coupling coefficient k.

  In the second experiment, the pass / attenuation characteristics of a band-pass filter including two resonators that are electromagnetically coupled were examined. In the second experiment, the first bandpass filter shown in FIG. 9 and the second bandpass filter shown in FIG. 10 were produced. In any bandpass filter, two conductor layers 101 and 102 are disposed on the same dielectric layer in a rectangular region having a length of 2.0 mm and a width of 1.2 mm. The conductor layer 101 includes a resonator part 101a that is long in one direction, a connection part 101b that extends laterally from the vicinity of one end part of the resonator part 101a, and a capacitor constituent part 101c that is connected to one end part of the resonator part 101a. Have. The conductor layer 102 includes a resonator unit 102a that is long in one direction, a connection unit 102b that extends laterally from the vicinity of one end of the resonator unit 102a, and a capacitor configuration unit 102c that is connected to one end of the resonator unit 102a. Have. The resonator units 101a and 102a each constitute a resonator. The width of each resonator unit 101a, 102a is 200 μm, and the length of each resonator unit 101a, 102a is 1.35 mm. The connection unit 101b is connected to the input terminal, and the connection unit 102b is connected to the output terminal. Capacitor constituting portions 101c and 102c face a ground conductor layer (not shown) and constitute a capacitor together with the ground conductor layer.

  In any bandpass filter, the resonator units 101a and 102a are electromagnetically coupled. However, in the first band-pass filter, the distance between the resonator units 101a and 102a is 0.2 mm, and in the second band-pass filter, the distance between the resonator units 101a and 102a is 0.5 mm. Each bandpass filter is designed to pass a signal having a frequency within a frequency band of 2.4 to 2.5 GHz and attenuate a signal having a frequency of 2 GHz or less and a signal having a frequency of 3 GHz or more. . Here, the desired characteristics of the bandpass filter are that the attenuation in the frequency band of 2.4 to 2.5 GHz is 2.5 dB or less, the attenuation in the frequency band of 2 GHz or less and the frequency band of 3 GHz or more is 12 dB or more. Suppose that there is. The frequency band of 2.4 to 2.5 GHz corresponds to a pass band of a bandpass filter used in a Bluetooth standard communication device or a wireless LAN communication device.

  The result of the second experiment is shown in FIG. In FIG. 11, the pass / attenuation characteristics of the first bandpass filter are indicated by broken lines, and the pass / attenuation characteristics of the second bandpass filter are indicated by solid lines. As can be seen from FIG. 11, the first band-pass filter does not satisfy the desired characteristics, but the second band-pass filter satisfies the desired characteristics. As can be seen from the results of the first experiment, the band-pass filter has a wider pass band as the distance between the resonator units 101a and 102a is smaller. Therefore, under the conditions in the second experiment, if the distance between the resonator portions 101a and 102a exceeds 0.5 mm, the desired characteristics may not be satisfied. Therefore, under the conditions in the second experiment, in order to satisfy the desired characteristics, the distance between the resonator units 101a and 102a needs to be 0.5 mm or more. As can be seen from FIG. 10, in order to satisfy the desired characteristics, the number of resonators that can be arranged in a rectangular region of 2.0 mm in length and 1.2 mm in width is two or less. Therefore, under the conditions in the second experiment, three resonators are arranged on the same dielectric layer in the rectangular region of 2.0 mm in length and 1.2 mm in width to satisfy desired characteristics. A bandpass filter cannot be realized.

  On the other hand, in the present embodiment, the plurality of resonators are located at positions different from each other in the stacking direction of the stacked substrate and are disposed at both ends of the stacked substrate in the stacking direction. Arrange them so that they do not overlap each other when viewed from the vertical direction. Therefore, according to the present embodiment, even under the conditions in the second experiment, three resonators are placed on different dielectric layers in a rectangular area of 2.0 mm in length and 1.2 mm in width. It is possible to realize a bandpass filter that is arranged and satisfies desired characteristics. Increasing the number of resonators composing the bandpass filter makes it possible to make the pass / attenuation characteristics in the passband wider and flat, and to make the pass / attenuation characteristics near the attenuation pole steep. Thus, it becomes possible to increase the attenuation in the frequency region near the passband.

  Further, as can be seen from the first and second experiments, a bandpass filter having a narrow passband width can be realized by reducing the magnitude of coupling between adjacent resonators.

  In addition, this invention is not limited to the said embodiment, A various change is possible. For example, in the embodiment, each of the resonators 11 to 13 is configured by two conductor layers, but each of the resonators 11 to 13 may be configured by one conductor layer, or three or more conductor layers. You may comprise by.

  Further, the electronic component of the present invention is not limited to the band-pass filter, and can be applied to all electronic components including a plurality of resonators. The number of resonators included in the electronic component may be two, or four or more.

  The electronic component of the present invention is useful as a filter, particularly a band-pass filter, used in a Bluetooth standard communication device or a wireless LAN communication device.

It is a perspective view which shows the principal part of the electronic component which concerns on one embodiment of this invention. It is a perspective view which shows the external appearance of the electronic component which concerns on one embodiment of this invention. It is sectional drawing which shows a cross section parallel to the upper surface of the electronic component which concerns on one embodiment of this invention. It is a circuit diagram which shows the circuit structure of the electronic component which concerns on one embodiment of this invention. It is explanatory drawing which shows the upper surface of the 1st layer thru | or the 5th dielectric layer of the laminated substrate in one embodiment of this invention. It is explanatory drawing which shows the upper surface of the dielectric material layer of the 6th thru | or 11th layer of the multilayer substrate in one embodiment of this invention. It is explanatory drawing which shows the upper surface of the 12th thru | or 16th dielectric layer of the laminated substrate in one embodiment of this invention, and the lower surface of the 16th dielectric layer. It is a characteristic view which shows the result of a 1st experiment. It is explanatory drawing which shows the 1st band pass filter used in 2nd experiment. It is explanatory drawing which shows the 2nd band pass filter used in the 2nd experiment. It is a characteristic view which shows the result of a 2nd experiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Electronic component, 2 ... Input terminal, 3 ... Output terminal, 11-13 ... Resonator, 14-16 ... Capacitor, 20 ... Multilayer substrate.

Claims (5)

A multilayer substrate including a plurality of dielectric layers and a plurality of conductor layers stacked, and having first and second surfaces disposed at both ends in the stacking direction of the layers;
An electronic component comprising a plurality of resonators each configured using one or more conductor layers in the multilayer substrate,
The plurality of resonators are arranged at positions different from each other in the stacking direction and not overlapping each other when viewed from a direction perpendicular to the first and second surfaces. Electronic parts. The laminated substrate further has a third surface perpendicular to the first and second surfaces,
The electronic component according to claim 1, further comprising a shield layer disposed on the third surface and functioning as an electromagnetic shield.   The multilayer substrate includes, as the dielectric layer, a plurality of first dielectric layers and a second dielectric layer disposed between two adjacent first dielectric layers, 3. The second dielectric layer according to claim 1, wherein the second dielectric layer has a different dielectric constant, and the second dielectric layer is disposed at a position sandwiched between two resonators. Electronic components.   4. The electronic component according to claim 3, wherein a dielectric constant of the second dielectric layer is smaller than the first dielectric constant. Furthermore, an input terminal and an output terminal disposed on the outer peripheral portion of the multilayer substrate are provided,
5. The electronic component according to claim 1, wherein the plurality of resonators are provided between the input terminal and the output terminal in a circuit configuration, and realize a function of a band-pass filter. .

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