JP2007321217A - Method for forming protective film on device and device - Google Patents

Method for forming protective film on device and device Download PDF

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JP2007321217A
JP2007321217A JP2006154813A JP2006154813A JP2007321217A JP 2007321217 A JP2007321217 A JP 2007321217A JP 2006154813 A JP2006154813 A JP 2006154813A JP 2006154813 A JP2006154813 A JP 2006154813A JP 2007321217 A JP2007321217 A JP 2007321217A
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protective film
forming
substrate
film
base material
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JP4755941B2 (en
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Takaaki Kosuge
孝章 小菅
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Fujifilm Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To improve adhesiveness of a protective film having a specific pattern. <P>SOLUTION: The protective film 3 has portions 3B and 3A showing relatively strong and weak adhesion forces, respectively, at a boundary between the protective film 3 and a substrate 1 to enable patterning of the protective film 3. The portion 3A showing a relatively weak adhesion force in the protective film is removed, and the protective film having the specific pattern is formed on the substrate 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、デバイスの保護膜形成方法に関し、詳細には、パターニングされた保護膜の形成方法に関するものである。   The present invention relates to a method for forming a protective film for a device, and more particularly to a method for forming a patterned protective film.

従来、ファクシミリ、複写機あるいは放射線撮像装置などにおいて、画像情報を一旦画像記録手段に潜像として記録させ、その後この画像記録手段から画像情報を読み取ることが広範になされている。   2. Description of the Related Art Conventionally, in facsimiles, copying machines, radiation imaging apparatuses, and the like, image information is once recorded as a latent image on an image recording unit, and then image information is read from the image recording unit.

例えば、医療用放射線画像の記録再生においては、X線等の放射線に感応するa−Seから成るセレン板等の光電変換素子を感光体(放射線画像記録媒体)として用い、この感光体等に放射線画像情報を担持する放射線を照射して放射線画像情報に対応する潜像電荷を蓄積させ、その後レーザビームで感光体を走査し、そのとき感光体内に生じる電流を感光体両側の平板電極あるいは線状電極を介して検出することにより、潜像電荷が担持する静電潜像すなわち放射線画像情報を読み取るシステムが知られている。また、近年、画像読取手段を構成する光源として、有機EL発光素子を用いることも検討されている。   For example, in the recording and reproduction of medical radiation images, a photoelectric conversion element such as a selenium plate made of a-Se that is sensitive to radiation such as X-rays is used as a photoreceptor (radiation image recording medium), and radiation is applied to the photoreceptor. The latent image charge corresponding to the radiation image information is accumulated by irradiating the radiation carrying the image information, and then the photosensitive member is scanned with a laser beam. There is known a system that reads an electrostatic latent image carried by a latent image charge, that is, radiation image information by detecting through an electrode. In recent years, the use of an organic EL light-emitting element as a light source constituting the image reading unit has been studied.

一般に、これらの素子上には素子の物理的化学的保護のために保護膜が設けられているが、ポリパラキシリレンは、CVD法により容易に被膜形成ができるとともに、膜(パリレン被膜)としての防湿性、耐電圧性に優れ、化学的にも不活性で耐薬品性が高いことから、電気部品、電気回路基板、その他多くの部品等の保護膜として検討されてきている。しかし、一方で、パリレン被膜の基材に対する密着性は、基材の種類によってその特性が大きく異なることが知られている。   In general, a protective film is provided on these elements for physical and chemical protection of the elements. Polyparaxylylene can be easily formed into a film by a CVD method, and as a film (parylene film). It has been studied as a protective film for electrical components, electrical circuit boards, and many other components because of its excellent moisture resistance and voltage resistance, chemical inactivity, and high chemical resistance. However, on the other hand, it is known that the property of the adhesion of the parylene coating to the base material varies greatly depending on the type of the base material.

この基材に対する密着性の特性を利用したものとして、特許文献1には分離層にパリレン被膜を用い、基材の表面改質により基材との界面で部分的に分離層に対して密着性の良好な部分と、乏しい部分を設けて、分離層を容易に剥離することができる技術が記載されている。一方、特許文献2には、基材との密着性が向上させる方法として、パリレン被膜を形成後に紫外線照射をする技術が記載されている。
特開2005−183615号公報 特開平1−168859号公報
Patent Document 1 uses a parylene coating for the separation layer as part of this adhesive property to the substrate, and partially adheres to the separation layer at the interface with the substrate by surface modification of the substrate. A technique is described in which the separation layer can be easily peeled off by providing a good portion and a poor portion. On the other hand, Patent Document 2 describes a technique of irradiating ultraviolet rays after forming a parylene film as a method for improving the adhesion to a substrate.
JP 2005-183615 A Japanese Patent Laid-Open No. 1-168859

精密部品のコーティング、特にデバイスの保護膜の形成に際しては、配線などの点から基材上のある部分には保護膜を形成し、ある部分には保護膜を形成したくないという場合がある。このような場合、従来は、所定のパターニングをした保護膜を貼り付けたり、あるいは、保護膜を形成した後に、保護膜を形成したくない部分の保護膜を物理的、化学的処理を施して取り除くという手法がとられていた。   When coating precision parts, particularly when forming a protective film for a device, there is a case where a protective film is formed on a certain part on the substrate from the viewpoint of wiring or the like and a protective film is not desired to be formed on a certain part. In such a case, conventionally, a protective film with a predetermined patterning is attached, or after forming the protective film, a part of the protective film where the protective film is not to be formed is subjected to physical and chemical treatment. The technique of removing was taken.

しかし、前者のようにパターニングをした保護膜を貼り付ける方法では、精密コーティングに対応できないとい問題があり、後者の保護膜を形成した後に保護膜を部分的に取り除くという方法では、取り除く際の作業性を重視すれば、保護膜全体と基材との密着性をある程度弱くしておく必要があるが、そうするとパターニング後の保護膜と基材との密着性が充分ではなく、一方、パターニングされた保護膜の密着性を重視すれば、パターニング後の保護膜と基材との密着性は確保されるものの、保護膜を形成したくない部分の保護膜を充分に取り除くことができなかったり、取り除く際に、基材を浸食したりするという問題がある。特に、デバイスのような精密部品の場合、部分的に保護膜を取り除く際の物理的、化学的処理には温度や薬剤に制限があるため、保護膜の容易なパターニング方法が要望されている。   However, the method of pasting a protective film patterned like the former has a problem that it cannot cope with precision coating, and the method of removing the protective film partially after forming the latter protective film is a work to remove If the emphasis is placed on the property, it is necessary to weaken the adhesion between the entire protective film and the substrate to some extent, but if so, the adhesion between the protective film after patterning and the substrate is not sufficient, while the patterned film is patterned. If importance is attached to the adhesion of the protective film, the adhesion between the protective film after patterning and the substrate is ensured, but the protective film of the portion where the protective film is not desired cannot be sufficiently removed or removed. In this case, there is a problem that the substrate is eroded. In particular, in the case of precision parts such as devices, there is a demand for an easy patterning method of a protective film because there are limitations on temperature and chemicals in physical and chemical treatments when partially removing the protective film.

本発明は上記事情に鑑みなされたものであり、保護膜のパターニングが容易であって、パターニングされた保護膜の密着性が良好なデバイスの保護膜形成方法およびパターニング保護膜を有するデバイスを提供することを目的とするものである。   The present invention has been made in view of the above circumstances, and provides a protective film forming method for a device in which patterning of the protective film is easy and the adhesion of the patterned protective film is good, and a device having the patterned protective film. It is for the purpose.

本発明のデバイスの保護膜形成方法は、所定のパターニングされた保護膜を基材上に形成するデバイスの保護膜形成方法であって、前記保護膜に対しパターニング可能なように該保護膜と前記基材との界面で密着力が相対的に強い部分と弱い部分を形成し、該保護膜の密着力の相対的に弱い部分を取り除いて、所定のパターニングを有する保護膜を前記基材上に形成することを特徴とするものである。   The method for forming a protective film for a device of the present invention is a method for forming a protective film for a device, wherein a predetermined patterned protective film is formed on a substrate, and the protective film and the protective film can be patterned with respect to the protective film. A protective film having a predetermined patterning is formed on the substrate by forming a relatively strong portion and a weak portion at the interface with the substrate and removing a relatively weak portion of the protective film. It is characterized by forming.

前記保護膜は、ポリパラキシリレン材料からなる有機物膜であることが好ましい。この場合、前記保護膜に紫外線照射を選択的に施すことにより、前記密着力が相対的に強い部分と弱い部分を形成することが好ましい。   The protective film is preferably an organic film made of a polyparaxylylene material. In this case, it is preferable that the protective film is selectively irradiated with ultraviolet rays to form a relatively strong part and a weak part.

前記基材上に残された前記密着力の相対的に強い部分の保護膜の端部には、膜保持部材を設けることが好ましい。   It is preferable to provide a film holding member at the end of the protective film of the relatively strong adhesion remaining on the substrate.

本発明のパターニング保護膜を有するデバイスは、前記本発明のデバイスの保護膜形成方法により製造されたことを特徴とするものである。   A device having a patterning protective film of the present invention is manufactured by the method for forming a protective film of a device of the present invention.

本発明のデバイスの保護膜形成方法は、保護膜に対しパターニング可能なようにこの保護膜と基材との界面で密着力が相対的に強い部分と弱い部分を形成し、保護膜の密着力の相対的に弱い部分を取り除いて、所定のパターニングを有する保護膜を基材上に形成するので、基材上に残された密着力の相対的に強い部分の保護膜は基材との密着性を良好なものとすることが可能な一方、密着力の相対的に弱い部分は基材上から容易に取り除くことが可能である。   The method for forming a protective film of a device of the present invention forms a relatively strong part and a weak part at the interface between the protective film and the substrate so that the protective film can be patterned. Since the protective film having a predetermined patterning is formed on the base material by removing the relatively weak part of the protective film, the protective film of the relatively strong adhesive force remaining on the base material is in close contact with the base material. While it is possible to improve the property, it is possible to easily remove a portion having a relatively low adhesion from the substrate.

特に、本発明のデバイスの保護膜形成方法は、保護膜に対しパターニング可能なようにこの保護膜と基材との界面で密着力が相対的に強い部分と弱い部分を形成するので、保護膜を形成する基材の種類を選ばず、所定のパターニングを有する保護膜を基材上に形成することができる。   In particular, the method for forming a protective film of a device of the present invention forms a relatively strong and weak adhesion portion at the interface between the protective film and the substrate so that the protective film can be patterned. A protective film having a predetermined patterning can be formed on the base material regardless of the type of base material for forming the film.

以下、図面を用い、本発明のデバイスの保護膜形成方法について、基材上に電極が配置された表面に部分的に保護膜としてパリレン被膜を形成する場合を例にとって説明する。図1は基材上に電極が配置された表面に部分的にパリレン被膜を形成し、電極に配線をする場合の工程図である。   Hereinafter, a method for forming a protective film of a device of the present invention will be described with reference to the drawings, taking as an example a case where a parylene film is partially formed as a protective film on a surface on which an electrode is disposed on a substrate. FIG. 1 is a process diagram in the case where a parylene film is partially formed on a surface on which an electrode is arranged on a substrate, and wiring is performed on the electrode.

まず、図1(a)に示す基材1上に配置された電極2に対して、基板1上および電極2上の全面に亘ってパリレン被膜3を重合法によって形成する(図1(b))。パリレン被膜3を形成した後、形成したパリレン被膜3の取り除きたい部分に対してマスク4を配置し、パリレン被膜3全体に対して紫外線を照射する(図1(c))。照射後、マスク4でカバーされていたパリレン被膜3A部分は、電極2に対して密着力が弱いままであり、マスク4でカバーされていなかったパリレン被膜3B部分は基材1に対して密着力が強くなる(図1(d))。次いで、密着力が弱いパリレン被膜3A部分を電極2上から取り除く(図1(e))。続いて、電極2に対して配線5を接続し(図1(f))、パリレン被膜3B部分の端部を覆うように膜保持部材6で配線5を固定する(図1(g))。   First, a parylene coating 3 is formed on the substrate 1 and the entire surface of the electrode 2 by a polymerization method on the electrode 2 disposed on the substrate 1 shown in FIG. 1A (FIG. 1B). ). After the parylene coating 3 is formed, a mask 4 is disposed on the portion of the parylene coating 3 to be removed, and the entire parylene coating 3 is irradiated with ultraviolet rays (FIG. 1 (c)). After the irradiation, the parylene coating 3A portion covered with the mask 4 remains weak in adhesion to the electrode 2, and the parylene coating 3B portion not covered with the mask 4 adheres to the substrate 1. Becomes stronger (FIG. 1 (d)). Next, the parylene coating 3A portion having a weak adhesion is removed from the electrode 2 (FIG. 1 (e)). Subsequently, the wiring 5 is connected to the electrode 2 (FIG. 1 (f)), and the wiring 5 is fixed by the film holding member 6 so as to cover the end of the parylene coating 3B (FIG. 1 (g)).

なお、図1ではパリレン被膜3は基材1上のみに形成しているが、基材1の側面まで、あるいは側面と底面まで設けることによって、パリレン被膜3B部分と基材1の剥離をより抑制することが可能である。   In FIG. 1, the parylene coating 3 is formed only on the base material 1, but the separation between the parylene coating 3 </ b> B portion and the base material 1 is further suppressed by providing up to the side surface of the base material 1 or the side surface and the bottom surface. Is possible.

本発明のデバイスの保護膜形成方法は、保護膜に対しパターニング可能なように保護膜と基材との界面で密着力が相対的に強い部分と弱い部分を設けるので、基材の種類は何ら限定されるものではなく、金、銀、アルミニウム、鉄、銅、ニッケルなどの金属、ABS、PBT、塩化ビニル樹脂、スチレンなどのプラスチックなど広く選択することができる。また、基材はある程度の剛性を有するものの他、可撓性、弾性を有するものであってもよく、その厚みも限定されるものではない。   In the method for forming a protective film for a device of the present invention, a relatively strong part and a weak part are provided at the interface between the protective film and the base material so that the protective film can be patterned. It is not limited, but can be selected widely from metals such as gold, silver, aluminum, iron, copper and nickel, plastics such as ABS, PBT, vinyl chloride resin and styrene. Further, the substrate may have flexibility and elasticity in addition to a certain degree of rigidity, and the thickness is not limited.

特に、基材が極薄のガラス(例えば数十μm)のような場合、密着性を重視して保護膜を形成すると、保護膜を形成したくない部分の保護膜を充分に取り除くことができなかったり、あるいは極薄のガラス基材の割れなどを引き起こすことがあるが、本発明の保護膜形成方法では、保護膜に対しパターニング可能なように基材との界面で密着力が相対的に強い部分と弱い部分を形成し、この相対的に密着力が弱い部分を取り除くので、割れなどの問題を生じることがなく、一方、残された相対的に密着力の強い部分は基材に対して密着力が良好であるため、充分な密着性を確保することができる。   In particular, when the base material is an extremely thin glass (for example, several tens of μm), if a protective film is formed with an emphasis on adhesion, the protective film in a portion where the protective film is not desired can be sufficiently removed. However, in the method for forming a protective film according to the present invention, the adhesive force is relatively low at the interface with the base material so that the protective film can be patterned. The strong and weak parts are formed and the relatively weak adhesion is removed, so there is no problem such as cracking. On the other hand, the remaining relatively strong adhesion is against the substrate. Since the adhesion is good, sufficient adhesion can be ensured.

なお、基材側にあらかじめ溝や段差などを形成しておき、ここを境界として密着力が相対的に強い部分と弱い部分を形成し、溝や段差部に刃などを入れることにより、相対的に密着力が弱い部分をきれいに取り除くことができる。   In addition, a groove or a step is formed in advance on the base material side, a relatively strong part and a weak part are formed with this as a boundary, and a blade or the like is put in the groove or the step part, thereby making the relative The part with weak adhesion can be removed cleanly.

密着力が相対的に強い部分と弱い部分を形成する手段は、保護膜の種類によって最適なものを選べばよく、紫外線照射、カップリング剤、コロナ放電、プラズマ処理、オゾン洗浄、酸処理、表面粗化等の物理的、化学的処理を施す手法などから適宜選択することができるが、保護膜が、ポリパラキシリレン材料からなる有機物膜である場合には、紫外線照射によると、基材に対する影響を与えにくく、かつ精密に領域を選択することができる。   The most suitable means for forming the relatively strong and weak adhesion parts may be selected according to the type of protective film. UV irradiation, coupling agent, corona discharge, plasma treatment, ozone cleaning, acid treatment, surface It can be selected as appropriate from the method of performing physical and chemical treatment such as roughening, but when the protective film is an organic film made of a polyparaxylylene material, A region can be selected precisely with little influence.

紫外線照射の波長は、300〜400nmの波長が好ましい。これより短い波長の場合は被膜の劣化が起こりやすく、長い波長の場合には長時間の照射が必要となって経済的でない。紫外線の強度は波長や基材や保護膜の種類によって、さらにこれらの組合せによって微妙に異なるため一概には言えないが、例えば1kwの水銀ランプをパリレン被膜上20cmのところから10分前後照射することにより、ガラスに対する密着性を強くすることができる。   The wavelength of ultraviolet irradiation is preferably 300 to 400 nm. When the wavelength is shorter than this, the coating is liable to be deteriorated, and when the wavelength is longer, long-time irradiation is required, which is not economical. The intensity of ultraviolet rays varies slightly depending on the wavelength, the type of substrate and the protective film, and further varies depending on the combination of these. For example, a 1 kW mercury lamp is irradiated for about 10 minutes from 20 cm above the parylene coating. Thereby, the adhesiveness with respect to glass can be strengthened.

本発明の保護膜に用いられるポリパラキシリレン材料としては、以下の化学構造式の化合物が挙げられる。

Figure 2007321217
Figure 2007321217
Figure 2007321217
Figure 2007321217
Figure 2007321217
Figure 2007321217
Examples of the polyparaxylylene material used for the protective film of the present invention include compounds having the following chemical structural formula.
Figure 2007321217
Figure 2007321217
Figure 2007321217
Figure 2007321217
Figure 2007321217
Figure 2007321217

(但し、nは5000以上の整数)等の化学式であらわされ、単独で用いても組み合わせて用いても良い。 (Where n is an integer greater than or equal to 5000), and may be used alone or in combination.

パリレン被膜は気相蒸着重合法によって形成されるが、その蒸着機構は3つの工程より成る。即ち、原料である固体二量体のジパラキシリレン(A)の気化が起こる第一工程、二量体の熱分解によるジラジカルパラキシリレン(B)の発生が起こる第二工程、基材へのジラジカルパラキシリレンの吸着と重合が同時に成され、高分子量のポリパラキシリレン(C)の被膜形成が起こる第三工程である。この3つの工程における化学式(1)の反応式は下記の様になる。

Figure 2007321217
The parylene film is formed by vapor deposition polymerization, and the deposition mechanism is composed of three steps. That is, the first step in which the diparaxylylene (A) of the solid dimer as a raw material is vaporized, the second step in which the diradical paraxylylene (B) is generated by thermal decomposition of the dimer, and the diradical para to the substrate. This is a third step in which the adsorption and polymerization of xylylene are simultaneously performed to form a film of high molecular weight polyparaxylylene (C). The reaction formula of chemical formula (1) in these three steps is as follows.
Figure 2007321217

この工程中において一般に真空度は0.1〜100Pa(10−3〜1Torr)であり、第一工程は100〜200℃、第二工程は450〜700℃、第三工程は室温にて行われる。これら、気相蒸着重合法によって得られたパリレン被膜は、基材に対してコンフォーマル(同形)コーティングが可能である他、コーティングそのものは室温で行うことができるので、基材に対する熱履歴を与えないでコーティングを行うことができる。このため、高温の処理をすることができないSeデバイス等の基材に対するコーティングにも最適である。 In this process, the degree of vacuum is generally 0.1 to 100 Pa (10 −3 to 1 Torr), the first process is performed at 100 to 200 ° C., the second process is performed at 450 to 700 ° C., and the third process is performed at room temperature. . These parylene coatings obtained by vapor deposition polymerization can be conformally coated on the substrate, and the coating itself can be performed at room temperature, giving a thermal history to the substrate. The coating can be done without. For this reason, it is also optimal for coating on substrates such as Se devices that cannot be processed at high temperatures.

加えて、パリレン被膜は、シリコーン、エポキシ、ウレタン等を上回る電気絶縁性、150℃以下の温度で全ての有機溶剤に対しての不溶性、ほとんどの酸、アルカリにも腐蝕されないという耐薬品性、真空及び不活性ガス雰囲気下であれば200℃以上で10年間の連続使用に耐え得る耐熱性、−150℃の低温においても180°の曲げにも破損しない耐寒性、ミクロンオーダーの狭い隙間への浸透性及び精密性、水蒸気及びガスの浸透性が極めて少なく同時に被着体からのアウトガスの遮断性も優れるガスバリア性のあるパターニング保護膜を得ることが可能である。さらに、パリレン被膜は、被着体によっては0.2μmの厚さよりピンホールの無いコンフォーマルコーティングが可能であり、更にコーテイング時に基材に熱履歴を加えないためにコーティング歪を残さずにパターニングをすることができる。   In addition, the parylene coating has better electrical insulation than silicone, epoxy, urethane, etc., insolubility to all organic solvents at temperatures below 150 ° C, chemical resistance not to be corroded by most acids and alkalis, vacuum Heat resistance that can withstand continuous use for 10 years at 200 ° C or higher in an inert gas atmosphere, cold resistance that does not break even at low temperatures of -150 ° C and 180 ° bending, and penetration into narrow gaps on the order of microns Therefore, it is possible to obtain a patterning protective film having a gas barrier property, which has extremely low permeability and precision, water vapor and gas permeability, and at the same time, is excellent in blocking outgas from the adherend. In addition, the parylene coating can be conformally coated with no pinholes from a thickness of 0.2 μm depending on the adherend, and furthermore, it does not leave a coating history and does not leave a coating distortion because it does not add a thermal history to the substrate. can do.

基材上に残された前記密着力の相対的に強い部分の保護膜の端部に設ける膜保持部材としてはエポキシ樹脂があげられ、このエポキシ樹脂を固めることにより、保護膜の端部を補強することができる。また、ガラス部材などで端部を上から押さえたり、あるいは端部とその近辺以外をマスキングした上で、パリレン膜端の上からパリレン膜を形成して固めるといった方法を用いてもよい。   The film holding member provided at the end of the protective film of the relatively strong adhesion remaining on the base material is an epoxy resin, and by hardening the epoxy resin, the end of the protective film is reinforced. can do. Alternatively, a method may be used in which the end portion is pressed from above with a glass member or the like, or a portion other than the end portion and its vicinity is masked and a parylene film is formed and hardened from above the end of the parylene film.

以上のように、本発明のデバイスの保護膜形成方法は、保護膜に対しパターニング可能なようにこの保護膜と基材との界面で密着力が相対的に強い部分と弱い部分を形成し、保護膜の密着力の相対的に弱い部分を取り除いて、所定のパターニングを有する保護膜を基材上に形成するので、基材上に残された密着力の相対的に強い部分の保護膜は基材との密着性を良好なものとすることが可能な一方、密着力の相対的に弱い部分は基材上から容易に取り除くことが可能である。   As described above, the method for forming a protective film of the device of the present invention forms a relatively strong part and a weak part at the interface between the protective film and the substrate so that the protective film can be patterned. Since the protective film having a predetermined patterning is formed on the base material by removing the relatively weak part of the protective film, the protective film of the part having the relatively strong adhesive force left on the base material is While it is possible to improve the adhesion to the substrate, the relatively weak part of the adhesion can be easily removed from the substrate.

従って、本発明のデバイスの保護膜形成方法は、有機TFT素子や有機EL素子を有する信頼性の高い薄膜デバイス装置、これらを用いた液晶表示装置、電気泳動表示装置等の電気光学装置などに広く利用することができる。   Therefore, the device protective film forming method of the present invention is widely applied to highly reliable thin film device devices having organic TFT elements and organic EL elements, electro-optical devices such as liquid crystal display devices and electrophoretic display devices using these. Can be used.

本発明の保護膜形成方法の工程を示す概略図Schematic which shows the process of the protective film formation method of this invention

符号の説明Explanation of symbols

1 基材
2 電極
3 パリレン被膜
4 マスク
5 配線
6 膜保持部材
DESCRIPTION OF SYMBOLS 1 Base material 2 Electrode 3 Parylene film 4 Mask 5 Wiring 6 Film holding member

Claims (5)

所定のパターニングされた保護膜を基材上に形成するデバイスの保護膜形成方法であって、前記保護膜に対しパターニング可能なように該保護膜と前記基材との界面で密着力が相対的に強い部分と弱い部分を形成し、該保護膜の密着力の相対的に弱い部分を取り除いて、所定のパターニングを有する保護膜を前記基材上に形成することを特徴とするデバイスの保護膜形成方法。   A method for forming a protective film for a device, wherein a predetermined patterned protective film is formed on a substrate, wherein the adhesive force is relatively relative to the interface between the protective film and the substrate so that the protective film can be patterned. A protective film for a device, wherein a protective film having a predetermined patterning is formed on the base material by forming a strong part and a weak part in the protective film, and removing a relatively weak part of the protective film. Forming method. 前記保護膜が、ポリパラキシリレン材料からなる有機物膜であることを特徴とする請求項1記載のデバイスの保護膜形成方法。   The method for forming a protective film for a device according to claim 1, wherein the protective film is an organic film made of a polyparaxylylene material. 前記保護膜に紫外線照射を選択的に施すことにより、前記密着力が相対的に強い部分と弱い部分を形成することを特徴とする請求項2記載のデバイスの保護膜形成方法。   3. The method of forming a protective film for a device according to claim 2, wherein the protective film is selectively irradiated with ultraviolet rays to form a relatively strong part and a weak part. 前記基材上に残された前記密着力の相対的に強い部分の保護膜の端部に、膜保持部材を設けることを特徴とする請求項1,2または3記載のデバイスの保護膜形成方法。   4. The method of forming a protective film for a device according to claim 1, wherein a film holding member is provided at an end portion of the protective film of the relatively strong adhesion portion left on the base material. . 請求項1〜4のいずれかに記載のデバイスの保護膜形成方法により製造されたことを特徴とするパターニング保護膜を有するデバイス。   A device having a patterning protective film manufactured by the method for forming a protective film for a device according to claim 1.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005214800A (en) * 2004-01-29 2005-08-11 Hamamatsu Photonics Kk Radiation image sensor
JP2006049847A (en) * 2004-06-28 2006-02-16 Semiconductor Energy Lab Co Ltd Methods for manufacturing wiring substrate, thin film transistor, display device and television device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005214800A (en) * 2004-01-29 2005-08-11 Hamamatsu Photonics Kk Radiation image sensor
JP2006049847A (en) * 2004-06-28 2006-02-16 Semiconductor Energy Lab Co Ltd Methods for manufacturing wiring substrate, thin film transistor, display device and television device

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