JP2007315986A - Circuit inspection device and circuit inspection method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform stable temperature control in inspecting the operation of a circuit constituted on a substrate. <P>SOLUTION: A circuit inspection device 1 current-carries a semiconductor laser chip 3 constituted on a semiconductor laser bar 4, and inspects its operation. The circuit inspection device 1 comprises a probe 2, that comes into contact with an electrode pad 31 conducting with the semiconductor laser chip 3 and performs current-carrying, a light-receiving element section 8 for detecting a laser beam emitted from the semiconductor laser chip 3, according to the current-carrying state to the semiconductor laser chip 3 via the probe 2, and a supply nozzle 6 for dipping the semiconductor laser chip 3 and a light-receiving element section 8 in solvent L controlled at a predetermined temperature, during detection of the operation of the semiconductor laser chip 3 by the light-receiving element section 8. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a circuit inspection apparatus and a circuit inspection method for inspecting the operation of a circuit formed on a substrate, and in particular, in a case where a number of circuits such as semiconductor laser chips are connected in a bar shape, a probe is brought into contact with each circuit. The present invention relates to a circuit inspection apparatus and a circuit inspection method for inspecting an operation state by energization.

  In the manufacturing process of a semiconductor laser chip, there are cases where an electrical measurement or an energization test is performed in the middle of the process from the state of a semiconductor wafer to separation into individual semiconductor chips. For example, semiconductor laser chips are easier to handle than electrical measurements and energization tests after being separated into individual semiconductor laser chips, so electrical measurements and energization tests in a form in which many semiconductor laser chips are connected in a bar shape I do.

  As an example of a conventional semiconductor laser bar energization device (circuit inspection device), FIG. 6 shows a circuit inspection device for inspecting the electrical characteristics of a semiconductor laser chip in the form of a semiconductor laser bar. The circuit inspection apparatus 1 mainly includes a probe 2 as an upper electrode whose end is connected to a tester (not shown) for measuring electrical characteristics, and a semiconductor laser bar 4 in which a large number of semiconductor laser chips 3 are connected in a bar shape. The lower electrode 5 that vacuum-sucks the back surface of the semiconductor laser chip 3 and is in contact with the back surface electrode of the semiconductor laser chip 3 to be conductive, and a light receiving element (not shown) that receives the laser light emitted from the semiconductor laser chip 3. .

  The probe 2 is attached to the semiconductor laser chip 3 at a slight angle, and is lowered for measurement by the elevating mechanism (not shown) and comes into contact with the surface electrode. The pitch can be moved to the position of the semiconductor laser chip 3. The reason why the probe 2 is attached obliquely is to relieve the mechanical stress applied to the surface of the semiconductor laser chip 3 by the sharp tip of the probe 2 when it is lowered.

  The lower electrode 5 is provided with a plurality of suction holes (not shown) on the surface thereof, and the semiconductor laser bar 4 is vacuum-sucked by the suction holes (not shown). In order to serve as one measurement electrode for applying the measurement voltage, at least the surface of the semiconductor laser bar 4 in contact with the back electrode is made of a metal material having good conductivity.

  In addition, a light receiving element portion (not shown) that receives laser light emitted from the semiconductor laser chip 3 is attached at a position facing the light emitting portion of the semiconductor laser chip 3 and is connected to a tester (not shown). Yes.

  Next, a method for inspecting electrical characteristics will be described. First, the semiconductor laser bar 4 is placed at a predetermined position on the lower electrode 5 by a suction nozzle (not shown) and vacuum-sucked. Next, the lower electrode 5 is moved by a horizontal movement mechanism (not shown) to a position where the semiconductor laser chip 3 at one end of the vacuum-adsorbed semiconductor laser bar 4 is directly below the probe 2, and then the semiconductor laser chip 3. The probe 2 descends to the surface electrode of the electrode and is pressed at a constant pressure to apply a voltage.

  Then, laser light emitted from the semiconductor laser chip 3 is received by a light receiving element portion (not shown), and predetermined electrical characteristics are measured. Thereafter, the probe 2 moves away from the surface electrode of the semiconductor laser chip 3 and rises to a predetermined standby position. Then, the measurement is repeated by sequentially moving the lower electrode 5 horizontally so that the next semiconductor laser chip 3 comes under the probe 2.

  In the above description, the configuration in which the lower electrode 5 moves in the horizontal pitch has been described, but a configuration in which the probe 2 moves in the horizontal pitch may be used.

  Here, in the operation inspection of a circuit such as a semiconductor laser formed on the substrate, temperature management at the time of measurement is very important. From this point of view, Patent Document 1 proposes a semiconductor inspection apparatus characterized in that a heating apparatus is built in an inspection table and measurement is performed while heating a plurality of semiconductor elements. Patent Document 2 describes a configuration in which an accelerated deterioration test is performed by placing an inspection object on a test jig and performing a heating and energizing operation at a temperature higher than room temperature.

JP 61-168238 A Japanese Patent Laid-Open No. 10-321685

  In the conventional technology as described above, for example, in a semiconductor laser for optical disc use or laser printer use, the optical output is several mW to several hundred mW, and in the light measurement in the pulse operation, the lower electrode is provided from the semiconductor laser bar. Since it functions as a heat sink that dissipates the heat generated, it is not a big problem. However, in an element called a so-called ultra-high power semiconductor laser for industrial use, it is necessary to inspect with an optical output of several hundred mW or several W by continuous energization, and heat dissipation becomes a problem.

  In general, the energy conversion efficiency of a GaAs / AlGaAs infrared semiconductor laser light-emitting element is 40% to 50%, so that 50% to 60% of the input power is converted into heat. Further, since the energy conversion efficiency of the AlGaInP / GaInP red semiconductor laser light emitting element is 15% to 20%, 80% to 85% of the input power is converted into heat. Since the energy conversion efficiency of the AlGaN / GaInN blue-violet semiconductor laser light emitting element is 12 to 15%, 85 to 88% of the input power is converted into heat.

  If this heat generation cannot be efficiently dissipated, the temperature of the light emitting portion rises, further reducing the energy conversion efficiency, negatively feeding back and causing a decrease in the light emission output, causing a negative effect on the device.

  When the light output is small, the heat generation is not large, but in the case of an ultra-high power laser, heat dissipation simply by contact with the heat sink is insufficient.

  In this regard, as shown in Patent Documents 1 and 2, when a temperature control mechanism is provided inside the table, the heat generated by the semiconductor laser bar is dissipated by the contact between the table and the bar. However, in heat dissipation due to contact, heat radiation becomes unstable due to variations in contact strength and area, and the reliability of the measured value of a semiconductor laser having temperature dependence in the optical output characteristics is reduced. Further, in the semiconductor laser bar, since the temperature rise is determined by the product of the contact thermal resistance and the heat generation amount, in particular, in the case of a high-power laser bar whose heat generation is 1 to 2 orders of magnitude larger, the temperature rise is very large in principle.

  Conventionally, in the operation measurement of a high-power semiconductor laser bar, defective chips that do not emit light or hardly emit light can be selected, but energization evaluation at a rated output has not been performed. The semiconductor laser bar is pelletized to a semiconductor laser chip, mounted on a heat sink and assembled into a form that is easy to cool, and then measured to select non-defective products. In this method, defective chips are also mounted, which reduces yield and contributes to high cost.

  As described above, in the operation inspection by energizing the circuit, although temperature management for the circuit is important, the conventional configuration cannot perform sufficient temperature management, and thus it is not possible to perform an accurate inspection in the substrate state. The problem has arisen.

  The present invention has been made to solve such problems. That is, the present invention relates to a probe for energizing a circuit formed in contact with an electrode pad that is electrically connected to the circuit in a circuit inspection apparatus that inspects the operation of the circuit by energizing the circuit configured on the substrate, and the probe. Detecting means for detecting the operation of the circuit according to the state of energization of the circuit through the circuit, and for detecting the operation of the circuit by the detecting means for immersing the circuit and the detecting means in a solvent controlled to a predetermined temperature A solvent supply means.

  Further, according to the present invention, in a circuit inspection method for energizing a circuit formed on a substrate and inspecting the operation of the circuit, an operation is performed by energizing the circuit by bringing a probe into contact with an electrode pad electrically connected to the circuit. In the detection by the detection means, the inspection is performed in a state where the circuit and the detection means are immersed in a solvent controlled to a predetermined temperature.

  In the present invention, in performing the operation inspection by energizing the circuit, the circuit and the detection means are inspected in a state of being immersed in a solvent. Therefore, the operation inspection is performed by stabilizing the temperature of the circuit in the energized state with the solvent. Will be able to.

  As an example, in the case of a circuit inspection apparatus that conducts inspection by energizing a semiconductor bar in which a large number of semiconductor chips each having electrodes on the front and back surfaces are connected in a bar shape, all the back surface electrodes of the semiconductor chip are in contact with each other and are electrically connected. A lower electrode and an upper electrode that individually contacts and conducts with each surface electrode of the semiconductor chip, and a semiconductor bar is sandwiched between the lower electrode and the upper electrode to conduct an operation test. A solvent such as pure water whose temperature is controlled is flowed from above, and light emission is detected by a photodetector installed in the flowing solvent.

  In addition, in the inspection method using a solvent, even in the form of continuous supply during the operation inspection of the circuit, the solvent is supplied into the container surrounding the circuit, the electrode pad, the probe, and the detection means, and during these operation inspections. May be carried out in a state of being immersed in a solvent.

  In addition, in order to control the temperature of the solvent, it is configured to have a temperature control means, or can be configured to switch and supply a plurality of solvents having different temperatures from the solvent supply means, or a plurality of supply nozzles are provided as the solvent supply means. Further, a configuration may be adopted in which solvents having different temperatures are supplied by switching from the respective supply nozzles.

  Here, for example, pure water is used as the solvent. In other words, the solvent is supplied so as to immerse the circuit and the detection means, and in this state, the probe is energized to the circuit, so that the solvent needs to be an insulating liquid. Furthermore, when the circuit is a light emitting element and the detection means is a light receiving element, the light emitted from the light emitting element passes through the solvent and reaches the light receiving element, so that it is necessary to prevent this light from being scattered by the solvent. There is. Therefore, pure water (pure water) having these conditions is used.

  Therefore, according to the present invention, it is possible to accurately control the temperature of the circuit to be inspected by energization, and to improve the measurement accuracy of the energization test. As a result, it is possible to select only non-defective circuits by accurate inspection in the substrate state and manufacture only non-defective products with high yield.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present embodiment, as an example of a circuit to be inspected, an energization test is performed on a semiconductor laser bar having a plurality of semiconductor lasers configured in a bar shape (semiconductor laser bar).

  FIG. 1 is a schematic diagram for explaining the circuit inspection apparatus according to the first embodiment. In other words, the circuit inspection apparatus 1 is in contact with the lower electrode 5 on which the semiconductor laser bar 4 to be inspected is placed and the electrode pad 31 that is electrically connected to the individual semiconductor laser chip (circuit) 3 to energize the semiconductor laser chip 3. Between the probe 2 that performs the detection, the light receiving element portion 8 that is a detection unit that detects light emitted by energization of the semiconductor laser chip 3 via the probe 2, and the operation inspection of the semiconductor laser chip 3 by the light receiving element portion 8 The semiconductor laser chip 3 including the electrode pad 31 and the supply nozzle 6 for immersing the light receiving element portion 8 in a solvent controlled to a predetermined temperature are provided.

  The lower electrode 5 on which the semiconductor laser bar 4 is placed is electrically connected to one end of a tester (not shown) for measuring electrical characteristics, and a suction hole (for vacuum suction of the semiconductor laser bar 4 placed on the surface thereof) (Not shown) is provided. Since this lower electrode 5 also serves as one measurement electrode for applying a voltage for measurement, at least the surface in contact with the back electrode of the semiconductor laser bar 4 is made of a metal material having good conductivity such as copper. .

  The probe 2 is electrically connected to the other end of the tester and has a pointed tip toward the electrode pad 31 on the upper surface of the semiconductor laser chip 3. When performing the measurement, it is lowered by an elevating mechanism (not shown), comes into contact with the electrode pad 31, and can be raised to a predetermined standby position after the measurement.

  The light receiving element portion 8 is arranged to face the laser light emitting surface of the semiconductor laser chip 3 to be measured in order to receive the laser light emitted from the semiconductor laser chip 3, so that an output signal is sent to the tester. It has become.

  Since the supply nozzle 6 immerses the semiconductor laser chip 3 to be measured and the light receiving element portion 8 with the solvent L, the supply of the solvent L controlled to a predetermined temperature can be made to flow continuously. . As the solvent L, a solvent that has sufficient insulation against energization during measurement and does not contain impurities that adversely affect measurement when the light receiving element 8 receives laser light is used. Therefore, pure water or other liquid that satisfies such conditions may be used.

  In addition, an air nozzle 7 is provided to dry the semiconductor laser chip 3 and the light receiving element portion 8 after the measurement is completed, and air can be ejected from the air nozzle 7 to blow off water droplets and the like. .

  FIG. 2 is a schematic side view illustrating a contact example of the probe. FIG. 2A is an example of a probe with a sharp tip, and FIG. 2B is an example of a probe with a pad provided at the tip. With the pointed probe 2 as shown in FIG. 2A, the contact area is small, so that positioning when contacting the semiconductor laser chip 3 is facilitated. Further, in the probe 2 in which the pad 21 is previously provided as shown in FIG. 2B, damage to the semiconductor laser chip 3 can be minimized at the time of contact.

  In any example, when performing an operation inspection of the semiconductor laser chip 3, the probe 2 is brought into contact with the electrode pad of the semiconductor laser chip 3 and energized with the lower electrode 5 to emit laser light from the emission surface. Let Then, the laser beam is received by the light receiving element portion 8 arranged to face the emission surface, an electrical signal corresponding to the output level of the laser beam is obtained, and the quality is determined by the tester.

  In performing the operation inspection by such energization, the solvent L is allowed to flow from the supply nozzle 6 so that the semiconductor laser chip 3 and the light receiving element portion 8 are immersed in the solvent L. Thereby, the heat generated from the semiconductor laser chip 3 by energization can be taken away by the solvent L, and the temperature rise of the semiconductor laser chip 3 can be suppressed. Further, since the solvent L is controlled to a predetermined temperature, the semiconductor laser chip 3 can be kept at a predetermined temperature and can be operated in a stable state.

  The solvent L is caused to flow so as to immerse the light receiving element portion 8 together with the semiconductor laser chip 3. Accordingly, the solvent L is interposed at least from the laser light emitting surface 3 a of the semiconductor laser chip 3 to the light receiving surface 8 a of the light receiving element portion 8, and the laser light emitted from the light emitting surface 3 a of the semiconductor laser chip 3 is transmitted to the light receiving element portion 8. It becomes possible to configure a state in which the refractive index does not change until the light receiving surface 8a is reached.

  Here, the laser beam emitted from the semiconductor laser chip 3 is reflected by the light receiving surface 8 a of the light receiving element portion 8 and does not return to the semiconductor laser chip 3, and the light receiving surface 8 a of the light receiving element portion 8. A slope is provided at the top.

  FIG. 3 is a top view for explaining an inclined state between the emission surface and the light receiving surface. The semiconductor laser chip 3 that is in contact with the probe 2 is the object to be measured, and laser light is emitted from the emission surface 3 a of the semiconductor laser chip 3. In the figure, the alternate long and short dash line is a perpendicular to the emission surface 3a. In the light receiving element portion 8 disposed opposite to the semiconductor laser chip 3, the light receiving surface 8a is made to face the emission surface 3a in order to prevent the laser light from being reflected by the light receiving surface 8a and returning to the semiconductor laser chip 3. Slightly inclined. Thereby, it is possible to prevent the laser light reflected by the light receiving surface 8a from returning to the laser chip 3 and adversely affecting the laser oscillation.

  Next, the circuit inspection method of this embodiment using the circuit inspection apparatus will be described. First, the semiconductor laser bar 4 is placed on the lower electrode 5, and suction is performed from the suction hole to vacuum-suck the semiconductor laser chip 3 to a predetermined position on the lower electrode 5.

  Next, the lower electrode 5 is moved by a horizontal moving mechanism (not shown), and the individual electrode pads 31 of all the semiconductor laser chips 3 of the semiconductor laser bar 4 vacuum-adsorbed, and the electrode pads 31 and the probes 2 are After moving to a position where one-to-one correspondence is possible, the probe 2 is lowered and brought into contact with the electrode pad 31 of the semiconductor laser chip 3.

  At the same time, a solvent L such as pure water whose temperature is controlled is supplied from the supply nozzle 6. Then, the electrode pad 31 in contact with the probe 2 is energized. Then, laser light emitted from the semiconductor laser chip 3 by this energization is received by the light receiving surface 8a of the light receiving element portion 8, and predetermined electrical characteristics are measured. During this measurement, the solvent L is continuously poured out from the supply nozzle 6.

  After the measurement is completed, the supply of the solvent L is stopped and the probe 2 is moved away from the electrode pad 31 of the semiconductor laser chip 3 and raised to a predetermined standby position. The solvent L may be kept flowing all the time.

  When the measurement of one semiconductor laser chip 3 is completed, the lower electrode 5 is moved horizontally to the position of the adjacent semiconductor laser chip 3, and the probe 2 is lowered and brought into contact with the electrode pad 31 as before and supplied. While continuously supplying the solvent L from the nozzle 6, the laser beam is detected by energization. This example operation is repeated for all the semiconductor laser chips 3.

  When the measurement of one semiconductor laser bar 4 is completed, compressed air is jetted from the air nozzle 7 and the solvent L adhering to the semiconductor laser bar 4 is blown off and dried.

  In this way, by conducting laser light output measurement in the solvent L whose temperature is controlled, the current of the semiconductor laser bar 4 that generates a large amount of heat is kept constant, and an energization test is performed with a high output operation at a large current. Is possible.

  In the above example, pure water (cooling water) is used as the solvent L, but an alcohol such as ethanol, ethylene glycol, or an aqueous solution thereof may be used. In the case of using ethanol, there is also an advantage that the cleaning effect and drying become easy.

  Next, a second embodiment will be described. FIG. 4 is a schematic view for explaining a circuit inspection apparatus according to the second embodiment. In other words, the circuit inspection apparatus 1 is in contact with the lower electrode 5 on which the semiconductor laser bar 4 to be inspected is placed and the electrode pad 31 that is electrically connected to the individual semiconductor laser chip (circuit) 3 to energize the semiconductor laser chip 3. Between the probe 2 that performs the detection, the light receiving element portion 8 that is a detection unit that detects light emitted by energization of the semiconductor laser chip 3 via the probe 2, and the operation inspection of the semiconductor laser chip 3 by the light receiving element portion 8 The semiconductor laser bar 4 is similar to the first embodiment in that the semiconductor laser chip 3 including the electrode pads 31 and the supply nozzle 6 for immersing the light receiving element portion 8 in a solvent controlled to a predetermined temperature are provided. A container 10 is provided so as to surround the periphery of the light receiving element portion 8, and the container 10 is supplied so as to fill the solvent L, so that the semiconductor laser bar 4 and the light receiving element are supplied. The part 8 is different in that soaking in a solvent L.

  That is, the probe 2 is brought into contact with the semiconductor laser chip 3 to be measured and energized, and the output of the laser beam can be inspected by emitting the laser beam and receiving it by the light receiving element unit 8. When performing the inspection, the container 10 is filled with the solvent L, and the semiconductor laser bar 4 and the light receiving element portion 8 are immersed in the solvent L.

  Here, the supply of the solvent L is stopped in a state where it is filled in the container 10, and the measurement is performed in this state. Measurement may be performed while discharging from the outlet. When measuring a plurality of semiconductor laser bars 4 sequentially in succession, the measurement may be performed using the solvent L once stored in the container 10 as it is.

  In any example, the solvent L is filled in the container 10 at the time of measurement, and the laser light emitted from the semiconductor laser chip 3 to be measured reaches the light receiving element portion 8 through the solvent L. Further, the temperature of the semiconductor laser chip 3 surrounded by the solvent L is kept constant by the solvent L, and stable measurement can be performed without being affected by heat generation.

  Next, a third embodiment will be described. FIG. 5 is a schematic diagram for explaining a circuit inspection apparatus according to the third embodiment. In other words, the circuit inspection apparatus 1 is in contact with the lower electrode 5 on which the semiconductor laser bar 4 to be inspected is placed and the electrode pad 31 that is electrically connected to the individual semiconductor laser chip (circuit) 3 to energize the semiconductor laser chip 3. The second embodiment is the same as the first embodiment in that it includes a probe 2 that performs the above and a light receiving element portion 8 that is a detection unit that detects light emitted by energizing the semiconductor laser chip 3 via the probe 2. During the operation inspection of the semiconductor laser chip 3 by the element unit 8, a plurality of supply nozzles 6 a and 6 b are provided to supply the semiconductor laser chip 3 including the electrode pads 31 and the light receiving element unit 8 with a solvent controlled to a predetermined temperature. It differs in that it is provided.

  That is, in the third embodiment, the solvents L1 and L2 having different temperatures can be supplied from the plurality of supply nozzles 6a and 6b, respectively. FIG. 6A shows a state where the solvent L1 is supplied from one supply nozzle 6a, and FIG. 6B shows a state where the solvent L2 is supplied from the other supply nozzle 6b.

  For example, this embodiment is effective when it is desired to inspect the laser light output at a low temperature and a high temperature when performing an operation inspection of the semiconductor laser chip 3. First, when the operation at a low temperature is inspected, as shown in FIG. 5A, a solvent L1 controlled to a predetermined low temperature is supplied from one supply nozzle 6a, and the semiconductor laser chip 3 to be measured and The light receiving element portion 8 is immersed in the solvent L1. In this state, the probe 2 energizes the semiconductor laser chip 3 to emit laser light, and the light receiving element portion 8 detects the laser light. Thereby, the operation inspection can be performed while the semiconductor laser chip 3 is kept at the temperature (low temperature) of the solvent L1.

  On the other hand, when the operation at a high temperature is inspected, as shown in FIG. 5B, the solvent L2 controlled to a predetermined high temperature is supplied from the other supply nozzle 6a, and the semiconductor laser chip 3 to be measured and The light receiving element portion 8 is immersed in the solvent L2. In this state, the probe 2 energizes the semiconductor laser chip 3 to emit laser light, and the light receiving element portion 8 detects the laser light. Thereby, the operation inspection can be performed while the semiconductor laser chip 3 is kept at the temperature (high temperature) of the solvent L2.

  In this way, the temperature of the solvents L1 and L2 supplied from each of the plurality of supply nozzles 6a and 6b is controlled to different temperatures, and the operation inspection at different temperatures is performed by switching the supplied solvents L1 and L2. It becomes possible. In any case, since the semiconductor laser chip 3 to be measured is immersed in the solvents L1 and L2, a stable temperature can be maintained and an accurate operation inspection can be performed.

  In the example shown in FIG. 5, an example of a circuit inspection apparatus having two supply nozzles 6a and 6b is shown. However, more temperature settings can be made by providing three or more supply nozzles. Good.

  Further, even in a configuration in which the solvent L is supplied by one supply nozzle 6 as in the first embodiment and the second embodiment, the temperature of the solvent L can be set by switching to a plurality of temperatures by a temperature control device (not shown). If it is made, even if it is one supply nozzle 6, the solvent L of a different temperature can be supplied now.

  As described above, in the circuit inspection apparatus according to the present embodiment, it is possible to perform an energization test by a high output operation with a large current while keeping the temperature of the semiconductor laser bar 4 that generates particularly large heat from the semiconductor laser chip 3 constant. For this reason, the measurement accuracy at the time of high output operation is improved, so that a defective chip and a non-defective chip can be accurately determined in the state of the semiconductor laser bar 4. Accordingly, when the semiconductor laser bar 4 is pelletized and mounted on the semiconductor laser chip 3, defective chips can be selected and discarded, and only non-defective chips can be mounted, thereby increasing the yield and reducing the cost. .

  The circuit inspection device and the circuit inspection method of this embodiment are particularly effective for application to a semiconductor laser light emitting device that emits red light whose light output is sensitive to temperature, and can also be applied to other semiconductor laser light emitting devices. In the present invention, even a circuit other than a semiconductor laser (for example, an active element such as an LED or a transistor, or other passive element) can be an inspection target, and the operation is inspected according to a desired temperature condition. Very effective in case.

It is a mimetic diagram explaining a circuit inspection device concerning a 1st embodiment. It is a model side view explaining the example of contact of a probe. It is a top view explaining the state of the inclination of an output surface and a light-receiving surface. It is a schematic diagram explaining the circuit inspection apparatus which concerns on 2nd Embodiment. It is a schematic diagram explaining the circuit inspection apparatus which concerns on 3rd Embodiment. It is a mimetic diagram explaining the energization device (circuit inspection device) of the conventional semiconductor laser bar.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Circuit inspection apparatus, 2 ... Probe, 3 ... Semiconductor laser chip, 4 ... Semiconductor laser bar, 5 ... Lower electrode, 6 ... Supply nozzle, 7 ... Air nozzle, 8 ... Light receiving element part, 31 ... Electrode pad, L ... Solvent

Claims (12)

In a circuit inspection apparatus for energizing a circuit configured on a substrate and inspecting the operation of the circuit,
A probe that contacts an electrode pad that is electrically connected to the circuit and energizes the circuit;
Detecting means for detecting the operation of the circuit according to the state of energization of the circuit via the probe;
A circuit inspection apparatus comprising: a solvent supply unit configured to immerse the circuit and the detection unit with a solvent controlled to a predetermined temperature while the operation of the circuit is detected by the detection unit. The circuit inspection apparatus according to claim 1, wherein the solvent supply unit continuously supplies the solvent while the operation of the circuit is inspected by the detection unit. The circuit according to claim 1, wherein the solvent supply unit supplies the solvent into a container surrounding the circuit and the detection unit while the operation of the circuit is inspected by the inspection unit. Inspection device. The circuit inspection apparatus according to claim 1, further comprising a temperature control unit that controls a temperature of the solvent supplied from the solvent supply unit. The circuit inspection apparatus according to claim 1, wherein the solvent supply unit supplies a plurality of the solvents having different temperatures. The circuit inspection apparatus according to claim 1, wherein the solvent supply unit includes a plurality of supply nozzles, and switches and supplies the solvent having different temperatures from the plurality of supply nozzles. The circuit inspection apparatus according to claim 1, wherein the solvent is pure water. The circuit inspection apparatus according to claim 1, wherein the circuit is a light emitting element, and the detection unit is a light receiving element that receives light emitted from the light emitting element. The circuit inspection apparatus according to claim 8, wherein the light emitting surface of the light emitting element and the light receiving surface of the light receiving element are arranged to be inclined. In a circuit inspection method for energizing a circuit configured on a substrate and inspecting the operation of the circuit,
When the probe is brought into contact with the electrode pad that is in conduction with the circuit to energize the circuit and the operation is detected by the detection means, the circuit and the detection means are inspected in a state where the circuit is immersed in a solvent controlled at a predetermined temperature. The circuit inspection method characterized by performing. The circuit inspection method according to claim 10, wherein the solvent is continuously supplied while the operation of the circuit is inspected by the detection unit. The circuit inspection method according to claim 10, wherein the solvent is supplied into a container surrounding the circuit and the detection unit while the operation of the circuit is inspected by the inspection unit.

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