JP2007311588A - Method for manufacturing light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for obtaining a light emitting device having a predetermined shape with a satisfactory yield without a deformation, a breakage or the like during the manufacturing process. <P>SOLUTION: The method for manufacturing the light emitting device related to this invention comprises a first step of mounting the semiconductor light emitting element on a substrate with a conductive member arranged on its surface, a second step of bonding a sealed form including a transparent resin having an inner wall spaced from the semiconductor light emitting element in the region spaced from the semiconductor light emitting element on the substrate, a third step of injecting the liquid resin in the sealed form and hardening it, and a fourth step of cutting the sealed form and the substrate as they are bonded. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light-emitting device that can be used for a lighting source, a display, a backlight light source of a liquid crystal display, and the like.

  2. Description of the Related Art A light-emitting device having a structure in which a semiconductor light-emitting element is mounted on a printed board, and the semiconductor light-emitting element and a conductive portion of the printed board are connected with a wire or the like and then sealed with a translucent resin such as an epoxy resin is known. . Such a light emitting device can be easily set by setting a printed circuit board on which a semiconductor light emitting element is placed in a mold, heating and melting the resin on the tablet, and injecting the resin into the mold under pressure. Can be obtained (transfer mold). Alternatively, it can also be obtained by a method in which molten resin is put on a printed circuit board and pressed from above with a mold (compression molding). Although it is possible to form the resin by printing, it can be formed into an arbitrary shape such as a lens shape by forming it using a mold.

  In the case of a transfer mold, the melt viscosity may increase when the molten resin is injected. Therefore, the quality and yield of the product are affected by the conditions at the time of resin injection. On the other hand, the use of a liquid resin can improve the quality and yield of the product (for example, Patent Document 1).

Japanese Patent Laid-Open No. 9-153646.

  However, in the method as described above, it is necessary to closely contact the mold and the printed circuit board so that the resin does not leak when the liquid resin is injected. If it is forcibly removed, the resin or the printed circuit board may be damaged. However, if the degree of adhesion is lowered to facilitate removal after the resin is cured, the resin leaks between the mold and the substrate, making it impossible to mold the desired shape.

  In order to achieve the above object, a method of manufacturing a light emitting device according to the present invention includes a first step of placing a semiconductor light emitting element on a substrate having a conductive member disposed on the surface, and the semiconductor light emitting element on the substrate. A second step of bonding a sealing mold containing a translucent resin having an inner wall spaced from the semiconductor light emitting element in a region spaced from the semiconductor light emitting element; a third step of injecting a liquid resin into the sealing mold and curing And a fourth step of cutting the sealing mold and the substrate in a joined state.

  Thereby, even if it uses liquid resin, it can be set as a desired shape, without leaking from a sealing type | mold. Moreover, since the process of taking out from a sealing mold becomes unnecessary, it can be set as the sealing member of various shapes. Furthermore, since there is no breakage or deformation at the time of taking out from the sealing mold, a decrease in yield can be prevented and a light emitting device having a desired shape can be obtained efficiently.

  In the light emitting device manufacturing method according to claim 2 of the present invention, in the third step, the fluorescent member capable of absorbing light from the semiconductor light emitting element and emitting light having a wavelength different from the light is contained in the liquid resin. Including a step of containing. Thereby, it can be set as the semiconductor light emitting element of a various color tone.

  According to a third aspect of the present invention, there is provided a method for manufacturing a light emitting device, wherein the third step includes a step of curing the fluorescent member after settling. Thereby, since the light from a semiconductor light emitting element can be irradiated to a light emitting member efficiently, a uniform luminescent color with little color unevenness can be obtained.

  In the method for manufacturing a light emitting device according to claim 4 of the present invention, the second step uses a bonding member capable of reflecting light from a semiconductor light emitting element and / or light from a fluorescent member. Thereby, it can suppress that the light propagated inside the sealing type | mold is absorbed by the joining member, and an output falls.

  According to the present invention, a light-emitting device having a desired shape can be obtained with high yield without causing deformation or breakage in the process. In addition, the light-emitting device obtained by this method can be a high-luminance light-emitting device that suppresses the chromaticity shift due to the light emission observation direction.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the light emitting device for embodying the technical idea of the present invention, and the present invention does not limit the light emitting device to the following.

  Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. The dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the description unless otherwise specified. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members, and detailed description will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing.

  FIG. 1 is a perspective view illustrating a method for manufacturing a light-emitting device according to the present invention. 1A to 1D are diagrams illustrating a manufacturing method for obtaining the light emitting device 100A illustrated in FIG. 1C, and FIG. 1E is a diagram illustrating a manufacturing method for obtaining the light emitting device illustrated in FIG. 1F. 1G is a cross-sectional view taken along the line XX ′ of FIG. 1F.

  In FIG. 1A, a conductive member 103 is disposed on the surface of a flat substrate 102 to form an electrode pattern. The conductive member 103 includes at least two regions that are electrically insulated. In FIG. 1A, a plurality of semiconductor light emitting elements 104 are placed on one conductive member 103, and the electrodes of the semiconductor light emitting elements and the conductive member 103 are electrically connected by a conductive wire 106. Further, a bonding member 105 is disposed in a region of the surface of the substrate 102 where the sealing mold 101 is to be bonded.

  The structure as shown in FIG. 1B is obtained by bonding the sealing mold 101 to the substrate 102 on which the above members are arranged. Next, a liquid resin is injected into the space region between the substrate 102 and the sealing mold 101 from the direction of the arrow in FIG. 1C using a dispenser or the like, so that the structure shown in FIG. 1C is obtained. Then, after hardening liquid resin, it can be set as the light-emitting device 100B by passing through a cutting process.

  Hereinafter, each process and each member of the present invention will be described in detail with reference to the drawings.

(First step)
In the first step, a semiconductor light emitting element is placed on a substrate having a conductive substrate on the surface. In FIG. 1A, the substrate 102 has a substantially rectangular and flat shape, and the substrate 102 has substrate side surfaces 102a and 102b, and the side surfaces of the substrate 102 and the sealing member 101 coincide with each other. ing. In this way, most of the members can be used as a light emitting device. Further, the size of the substrate 102 is not limited to such a shape, and the size of the substrate 102 when viewed from above, as shown in FIG. 1D, such as providing an extended portion 102c that extends the portion of the substrate side surface 102a of FIG. 1A. May be larger than the sealing member. The extending portion 102c can be used as a region for fixing to a jig in a manufacturing process, for example. Or as shown to FIG. 1D, it can utilize as a mounting area | region (fixed area | region) etc. of the cover members 109a and 109b used for the backflow prevention of resin. Further, at this time, the extension portion is provided only in the extending direction of the substrate side surface 102a, and the substrate side surface 102b is not provided with the extension portion and is sized so as to substantially coincide with the side surface of the sealing mold 101. Cutting in the fourth step can be performed in only one direction.

  In addition, when the semiconductor light emitting element is disposed on the substrate, the semiconductor light emitting element is disposed on the conductive member 103 in FIG. 1A. However, the present invention is not limited to this and may be disposed directly on the substrate. Or you may arrange | position through another members, such as a protection element and a submount.

  As the bonding member used for mounting, a conductive or insulating bonding member can be selected according to the type of the semiconductor light emitting element to be used and the mounting method. When the semiconductor light emitting element uses an insulating element substrate, for example, in the case of a semiconductor light emitting element having a laminated structure in which a nitride semiconductor layer is grown on sapphire, the element substrate side is placed as shown in FIG. 1A. In the case of a surface, the conductivity of the joining member may be any. In addition, when the semiconductor light emitting element using such an insulating element substrate is used as a mounting surface on the semiconductor layer side, in order to establish conduction between the electrode of the semiconductor light emitting element and the conductive member of the substrate, Bonding is performed using a conductive bonding member. In addition, when the semiconductor light emitting element uses a conductive element substrate, it is necessary to join the conductive member on the substrate using a conductive bonding member. In this case, even when another member is interposed, it is necessary to place the member on a conductive member.

(Second step)
In the second step, a sealing mold containing a translucent resin having an inner wall spaced from the semiconductor light emitting element is bonded to a region spaced from the semiconductor light emitting element on the substrate. As shown in FIG. 1A to FIG. 1B, the mounting surface of the sealing mold 101 is placed on the joining member 105 provided on the substrate 102 so as to be joined. The bonding member needs to be provided in a region separated from the semiconductor light emitting element. For example, as illustrated in FIG. 1A, the bonding member can be provided at an end portion of the surface of the substrate 102. In addition, the sealing mold 101 needs to have a shape that forms an inner wall that is separated from the semiconductor light emitting element 104 when bonded to the substrate 102. For example, as shown in FIG. 1A, a flat portion 101a and a convex portion 102a in which the upper portion of the semiconductor light emitting element 104 has a convex shape can be provided. The shape of the sealing mold is not limited to this, and can be any shape that satisfies the above conditions. In addition, when the semiconductor light emitting element and the conductive member of the substrate are connected using a conductive wire, the sealed inner wall needs to be separated from the conductive wire.

  In FIG. 1B, the sealing mold 101 is bonded on the plane of the substrate 102. However, the bonding position is not limited to the plane of the substrate, and may be a position that satisfies the above conditions. For example, as in the light emitting device 200 illustrated in FIG. 2, a step may be provided in the end region of the substrate 202 and bonded to the portion. At this time, by making the shape of the sealing mold 201 conform to the substrate 202, adhesion between the substrate 202 and the sealing mold 201 can be improved. At this time, the joining member 205 is preferably provided on the entire joining surface. Furthermore, a hole may be provided in the plane of the substrate 102, a protrusion may be provided on the corresponding joint surface of the sealing mold 101, and the protrusion may be fitted into the hole. By doing in this way, compared with the case where it joins by planes, there is little position shift and the joint strength after joining can be improved.

(Third step)
In the third step, a liquid resin is injected into the sealing mold and cured. The liquid resin is injected using a dispenser or the like. At that time, the substrate may be on the top or the substrate may be on the bottom. The injection conditions of the resin can be appropriately selected depending on the composition and viscosity of the injected liquid resin.

  The liquid resin can contain a fluorescent member capable of absorbing light from the semiconductor light emitting element and emitting light having a wavelength different from that of the light. The composition, mixing amount, and the like of the fluorescent member can be appropriately selected according to the purpose and application. Moreover, a diffusion member, a filler, a pigment, etc. can also be mixed. At this time, the composition and viscosity of the liquid resin can be adjusted to be cured while the inclusions are uniformly distributed, or can be precipitated and cured. For example, the light-emitting device 600 shown in FIG. 6 can be obtained by injecting a liquid resin 607 containing a fluorescent member, and then setting the fluorescent member with the substrate facing downward, followed by curing. Thereby, the light from the semiconductor light emitting element can be efficiently converted by the fluorescent member. Further, the light emitting device 700 shown in FIG. 7 can be obtained by injecting a liquid resin 707 containing a fluorescent member, then setting the sealing mold on the lower side, and then setting the fluorescent member to be cured. As a result, when using a fluorescent member having a composition that easily deteriorates, the fluorescent member can be arranged at a position separated from the semiconductor light emitting element, so that deterioration is suppressed, and color tone and output change with time are suppressed. Can do.

(Fourth process)
A 4th process cut | disconnects in the state in which the sealing type | mold and the board | substrate were joined. For cutting, methods such as dicing, laser, and break are used. By doing in this way, it can be set as the light-emitting device of a desired shape, without producing problems, such as a deformation | transformation at the time of removing from a sealing type | mold, and a failure | damage. For example, as shown in FIG. 1E, the semiconductor light emitting elements 104 provided on the substrate 102 are cut at the broken line portions in FIG. 1E so as to be separated, thereby obtaining the light emitting device 100B as shown in FIG. 1F. be able to. By using such a method, the width of each light emitting device can be extremely narrowed. In addition, since the deformation and breakage of the sealing mold and the liquid resin that affect the optical characteristics can be suppressed when taking out from the sealing mold, a desired light-emitting device can be obtained with high yield.

  In addition to such a small light emitting device, a planar or linear light emitting device 100A on which a plurality of semiconductor light emitting devices are mounted as shown in FIG. 1C can also be obtained. In this case, it is the cover member used at the time of liquid resin injection | pouring and its connection area | region that is cut | disconnected. Since a liquid resin is used, it is necessary to use a cover member or the like for preventing leakage, but by cutting only that portion, a planar or linear light emitting device can be easily obtained.

  Next, each member will be described in detail.

(substrate)
As shown in FIG. 1G, the conductive member is disposed on the surface of the substrate. The conductive member has a through hole 108 therein, and extends to the back side of the substrate through the through hole. ing. Then, the conductive member formed on the back surface is joined with an external electrode such as a circuit board to achieve conduction. In FIG. 1G, a through hole is provided inside the substrate, and the front surface and the back surface of the substrate are electrically connected to each other. However, the through hole 108 is not limited to the inside of the substrate and is provided at a position exposed after cutting. Alternatively, it may be formed on the side surface 102b of the substrate so as to cover from the top surface to the back surface of the substrate.

  In addition to the flat and substantially rectangular shape shown in FIG. 1A, the shape of the substrate is a shape having a recess on which the semiconductor light emitting element can be placed, and a step is provided at the position where the bonding member is provided. It is also possible to provide a hole or protrusion that fits the shape (for example, FIG. 2) and the protrusion or hole provided in the sealing mold. Furthermore, it can be set as the shape which combined these.

  The substrate material may be any member that can be cut later. Specifically, glass epoxy resin, ceramics, fluorine-based resin, modified epoxy, phenol resin, silicone resin, etc. are strong and relatively cut. It is preferable to use a member that is easy to do. In particular, by using ceramics as a material, a support having high heat resistance can be obtained.

  The ceramic is preferably alumina, aluminum nitride, mullite, silicon carbide or silicon nitride. In particular, 90 to 96% by weight of the raw material powder is alumina, and 4 to 10% by weight of viscosity, talc, magnesia, calcia, silica and the like are added as sintering aids and sintered in a temperature range of 1500 to 1700 ° C. 40-60% by weight of ceramics and raw material powder is alumina, and 60-40% by weight of borosilicate glass, cordierite, forsterite, mullite, etc. are added as sintering aids and sintered in the temperature range of 800-1200 ° C. And ceramic substrates.

  By laminating and firing ceramic green sheets obtained by molding a ceramic powder and a material obtained by mixing a binder resin into a sheet shape, a plate-shaped support can be obtained. Or it can be set as the support body which has a recessed part by forming and laminating | stacking through-hole of various magnitude | sizes in a ceramic green sheet. The first metal underlayer disposed on such a support was coated with a predetermined pattern of conductive paste containing fine particles of a refractory metal such as tungsten or molybdenum at the stage of an unfired ceramic green sheet. It can be obtained by firing. Furthermore, after firing the ceramic green sheet, nickel, gold, or silver can be plated in order on the pre-formed base layer to form a metal layer or conductor wiring disposed on the side surface of the recess. In addition, as described above, the support made of ceramic material may be formed by arranging conductor wiring on a pre-fired ceramic plate in addition to integrally forming the conductive member and the insulating portion. it can.

(Sealed type)
The sealed type has a shape having an inner wall that is separated from an electronic component mounted on the substrate, such as a semiconductor light emitting element, a conductive wire, a protective element, and a submount disposed on the substrate. For example, as shown in FIG. 1G, a sealing type including a flat portion 101a and a convex portion 101b can be used. Moreover, not only this but various shapes can be used. For example, the sealed inner wall can be shaped as shown in FIG. That is, the inner wall 301a of the part shown by the arrow among the inner walls of the sealing mold 301 can be inclined. In such a light-emitting device 300, since the bonding area between the sealing mold 301 and the substrate 302 is increased, the arrangement area of the bonding member 305 can be increased. As a result, the adhesion between the substrate 302 and the sealing mold 301 can be improved. Furthermore, as shown in FIG. 3, since the inner wall 301a is inclined so as to face upward, light from the semiconductor light emitting element can be easily reflected upward, and an effect of improving output can be obtained. be able to. In addition, as shown in FIG. 5, a light emitting device 500 having an inner wall 501c that has a convex shape as a whole can be obtained.

  In addition to the inner wall as described above, the outer wall can have various n shapes. For example, like the light emitting device 400 illustrated in FIG. 4, the entire outer wall 401 d may be formed in a convex shape. Alternatively, as in the light emitting device 500 illustrated in FIG. 5, the outer wall 501 d including only a flat surface can be used.

  In the sealing type as described above, the inner wall shape and the outer wall shape can be substantially similar to each other as shown in FIG. 1G, and the inner wall and outer wall shape can be set as shown in FIGS. 3, 4, and 5, respectively. And can have different shapes. These can be selected according to the purpose and application, and light distribution characteristics and the like can be adjusted.

  The encapsulating material preferably contains a translucent resin that can transmit light from the semiconductor light emitting element. Moreover, the member which can be cut | disconnected later is preferable. As a specific material, a thermosetting resin such as an epoxy resin or a silicone resin, or a thermoplastic resin such as an acrylic resin can be used. Further, the sealing mold may contain a fluorescent member, a diffusing member, a filler, a pigment, and the like, as in the liquid resin described later.

(Conductive member)
A conductive member is provided on the substrate to form an electrode pattern. The electrode pattern can be variously selected depending on the type of semiconductor light emitting element to be placed (element substrate is conductive or insulating), the number, and the like. In FIG. 1A, an area to be cut later is an area narrower than other parts. By doing in this way, it can make it easy to cut | disconnect. Moreover, it is preferable to provide in the position spaced apart from a joining member, and, thereby, the joining strength of a sealing type | mold and a board | substrate can be made high. In particular, when a metal is used as the conductive member, the adhesiveness with the resin may be low. Therefore, it is possible to avoid problems such as peeling by separating the metal from the bonding region.

  The composition of the conductive member is preferably one that is excellent in conductivity and hardly absorbs light from a semiconductor light emitting element or light from a fluorescent member. Specifically, Cu / Ni / Ag, Cu / Ni / Au Cu / Ni / Rh, W / Ni / Ag, W, Ni / Rh and the like are preferable. Of these, those that easily absorb light preferably have a laminated structure such as a member that easily reflects light on the surface. For example, a laminated structure such as plating of silver on a conductive member made of tungsten is preferable.

(Joining member)
The joining member is for joining the substrate and the sealing mold, and a liquid or sheet-like member can be used. Specifically, epoxy resin, silicone resin, phenol resin, acrylic resin, butadiene rubber, modified epoxy, modified silicone, or the like can be used. These are arranged in a predetermined region to bond the substrate and the sealing mold. It is preferable to provide with an area substantially the same as or larger than that of the joining region, thereby suppressing the liquid resin from leaking and improving the adhesion. The thickness of the joining member is only required to ensure the joining strength, and is preferably thinner.

(Liquid resin)
The liquid resin is a resin that is liquid at the time of injection and is cured after injection. As the material for the liquid resin, silicone resin, epoxy resin, modified epoxy, modified silicone, and the like can be used. By using a resin having a refractive index lower than that of the resin used for the sealing mold, it is possible to improve the light extraction efficiency. Moreover, the condensing effect in internal resin can be used by setting it as the same refractive index.

  This liquid resin can contain a fluorescent substance, a diffusing agent, a pigment, and the like. About content etc., it can select variously according to the objective and a use.

(Semiconductor light emitting device)
A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, the blue, the green light emitting element, the use of those using ZnSe and nitride semiconductor _{(In X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) and it can. As the red light emitting element, GaAs, InP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light-emitting element to be used can be appropriately selected depending on the purpose.

In the case of a light-emitting device having a fluorescent material, a nitride semiconductor (In _X Al _Y Ga _1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferable. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal.

  Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, together with the semiconductor light emitting element, a light receiving element, a protective element (for example, a Zener diode or a capacitor) that protects the semiconductor element from destruction due to overvoltage, or a combination thereof can be mounted.

(Conductive wire)
The conductive wire that connects the electrode of the semiconductor light emitting element and the conductive member of the substrate is required to have good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the conductive member. Preferably ^{0.01cal / (s) (cm 2} ) (℃ / cm) or higher as heat conductivity, and more preferably ^{0.5cal / (s) (cm 2} ) (℃ / cm) or more. In consideration of workability and the like, the diameter of the conductive wire is preferably Φ10 μm or more and Φ45 μm or less. Specific examples of such conductive wires include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof. Such a conductive wire can easily connect the wire bonding region formed in the conductor wiring and the electrode of the semiconductor element by a wire bonding apparatus.

(Fluorescent material)
The fluorescent member is a member containing a fluorescent material that emits light having different wavelengths by absorbing at least part of light from the semiconductor light emitting element. In particular, it is more efficient to convert light from a semiconductor light emitting element into a longer wavelength. In the case where the light from the semiconductor light emitting device is visible light having a short wavelength and high energy, YAG: Ce, which is a kind of aluminum oxide phosphor, is preferably used. Particularly, the YAG: Ce phosphor absorbs a part of blue light from the semiconductor light emitting element and emits yellow light which is a complementary color depending on its content. The diode can be formed relatively easily.

  The present invention can be used for a lighting device, a display, a backlight light source of a liquid crystal display, and the like.

FIG. 1A is a perspective view for explaining a method for manufacturing a light emitting device of the present invention. FIG. 1B is a perspective view for explaining the method for manufacturing the light emitting device of the present invention. FIG. 1C is a perspective view for explaining the method for manufacturing the light emitting device of the present invention. FIG. 1D is a perspective view for explaining the method for manufacturing the light emitting device of the present invention. FIG. 1E is a perspective view for explaining the method for manufacturing the light emitting device of the present invention. FIG. 1F is a perspective view of a light emitting device obtained by the method for manufacturing a light emitting device of the present invention. 1G is a cross-sectional view taken along the line X-X ′ of FIG. 1F. FIG. 2 is a cross-sectional view of a light emitting device obtained by the manufacturing method of the present invention. FIG. 3 is a cross-sectional view of a light emitting device obtained by the manufacturing method of the present invention. FIG. 4 is a cross-sectional view of a light emitting device obtained by the manufacturing method of the present invention. FIG. 5 is a cross-sectional view of a light emitting device obtained by the manufacturing method of the present invention. FIG. 6 is a cross-sectional view of a light emitting device obtained by the manufacturing method of the present invention. FIG. 7 is a cross-sectional view of a light emitting device obtained by the manufacturing method of the present invention.

Explanation of symbols

100A, 100B, 200, 300, 400, 500, 600, 700... Light emitting devices 101, 201, 301, 401, 501... Sealing mold 101a. Stop mold convex portions 101c, 301c, 501c ... Sealing mold inner walls 401d, 501d ... Sealing mold outer walls 102, 202, 302 ... Substrate 102a ... Substrate side surface 102b ... Side surface 102c of substrate ... Extension portion 103 of substrate ... Conductive member 104 ... Semiconductor light emitting element 105, 205, 305 ... Joining member 106 ... Conductive wire 107, 607, 707 ...・ Liquid resin 607a, 707a ... High concentration region 108 of fluorescent member in liquid resin ... Through hole 109a, 109b ... Cover member

Claims (4)

A first step of placing a semiconductor light emitting element on a substrate having a conductive member disposed on the surface;
A second step of bonding a sealing mold including a translucent resin having an inner wall spaced apart from the semiconductor light emitting element to a region spaced apart from the semiconductor light emitting element on the substrate;
A third step of injecting and curing a liquid resin in the sealing mold;
A fourth step of cutting the sealing mold and the substrate in a bonded state;
A method of manufacturing a light emitting device, comprising:   2. The light emitting device according to claim 1, wherein the third step includes a step of causing the liquid resin to contain a fluorescent member capable of absorbing light from the semiconductor light emitting element and emitting light having a wavelength different from that of the light. Manufacturing method.   The method of manufacturing a light emitting device according to claim 2, wherein the third step includes a step of curing the fluorescent member after settling. The light emitting device manufacturing method according to claim 1, wherein the second step uses a bonding member capable of reflecting light from the semiconductor light emitting element and / or light from the fluorescent member.

Images