JP2007311432A - 半導体装置およびその製造方法 - Google Patents
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Abstract
【解決手段】電極パッドを、接合部の領域が、パッシベーション膜の開口と、半導体基板から垂直方向に平面的に重ならないように構成し、電極パッドの接合部領域以外の箇所に、パッシベーション膜の開口を通じて、下層のCu配線よりCuを拡散させて腐食を発生させることにより、電極パッドの接合部領域での腐食の発生を抑える。
【選択図】図1
Description
また、本発明の請求項2記載の半導体装置は、請求項1記載の半導体装置であって、前記第1導電層が前記パッシベーション膜の開口により前記第2導電層の配線と電気的接続されている前記電極パッドより小さいダミーパッドを有することを特徴とする。
また、この構成では、ダミーパッドを形成するため、電極パッドの数は倍になるが、ダミーパッドは、プローブ等の検査をする必要がないため、パッドサイズを縮小することが可能であり、さらにプローブ等検査をするための配置の制約や、プローブ等検査による下層の半導体素子への影響もないため、チップの内部回路領域上も含めて自由に配置することが可能であるので、チップサイズの拡大によるコストアップを抑えることができる。
また、本発明の請求項4記載の半導体装置は、請求項1または請求項2記載の半導体装置であって、前記第2導電層における前記第1導電層の直下領域には、配線を形成しないことを特徴とする。
(実施の形態1)
本発明の実施の形態1の半導体装置およびその製造方法を説明する。
また、本実施の形態では、外部と電気的接続をする接合部領域53の下層の層間絶縁膜3に配線を配置していないので、プローブ検査実施時に、外部と電気的接続をする接合部領域53の下層のパッシベーション膜4にクラックが発生しても、そのクラックを通じて外部と電気的接続をする接合部領域53にCuが拡散することはない。
(実施の形態2)
本発明の実施の形態2の半導体装置およびその製造方法を説明する。
(実施の形態3)
本発明の実施の形態3の半導体装置およびその製造方法を説明する。
(実施の形態4)
本発明の実施の形態4の半導体装置およびその製造方法を説明する。
(実施の形態5)
本発明の実施の形態5の半導体装置およびその製造方法を説明する。
(実施の形態6)
本発明の実施の形態6の半導体装置およびその製造方法を説明する。
(実施の形態7)
本発明の実施の形態7の半導体装置およびその製造方法を説明する。
2、3 絶縁膜
211、212、213、214 絶縁膜2内の配線
31 絶縁膜3内の配線
311a、312a、313a、314a 第2導電層の配線
311b、312b、313b、314b 第2導電層の配線
311c 第2導電層の配線
311d、312d、313d、314d、315 第2導電層の配線
311e、312e、313e、314e 第2導電層の配線群
311f、312f、313f、314f 第2導電層の配線
311g、312g、313g 第2導電層の配線
32a、32b ビア
4 パッシベーション膜
411a、412a、413a、414a パッシベーション膜の開口
411b、412b、413b、414b パッシベーション膜の開口
411c パッシベーション膜の開口
411d、412d、413d、414d パッシベーション膜の開口
411e、412e、413e、414e パッシベーション膜の開口
411f、412f、413f、414f パッシベーション膜の開口
411g、412g、413g パッシベーション膜の開口
41a、41b パッシベーション膜の開口
5a、5b、5c、5d、5e、5f、5g、5g’、513g 第1導電層
51a、51b 第1導電層
53 外部との電気的接続をとる接合部
6 半導体素子
7 保護膜
71f、71g、72g 保護膜の開口
8 プローブ
9 ボンディングワイヤ
Claims (7)
- 半導体基板の上層に、複数の絶縁膜、パッシベーション膜、外部と電気的接続するための電極パッドが積層された状態で形成された半導体装置であって、
前記電極パッドは、
前記パッシベーション膜上にAlまたはAl合金で形成された第1導電層と、
前記第1導電層の上面に前記外部と電気的接続するための領域として形成された接合部とからなり、
前記絶縁膜内で前記パッシベーション膜の直下に、
CuまたはCu合金からなる配線を有する第2導電層が形成され、
前記パッシベーション膜に、
前記第1導電層と前記第2導電層の前記配線とを接続するための開口が形成され、
前記電極パッドを、
前記接合部の領域が、前記パッシベーション膜の開口と、
前記半導体基板から垂直方向に平面的に重ならないように構成した
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記第1導電層が前記パッシベーション膜の開口により前記第2導電層の配線と電気的接続されている前記電極パッドより小さいダミーパッドを有する
ことを特徴とする半導体装置。 - 請求項1または請求項2記載の半導体装置であって、
前記第2導電層における前記第1導電層の直下領域に、前記第1導電層と電気的に接続されない配線を有する
ことを特徴とする半導体装置。 - 請求項1または請求項2記載の半導体装置であって、
前記第2導電層における前記第1導電層の直下領域には、配線を形成しない
ことを特徴とする半導体装置。 - 請求項1〜請求項4のいずれかに記載の半導体装置であって、
前記第2導電層の配線の少なくとも一部は、前記パッシベーション膜の開口より面積が小さく、前記パッシベーション膜の開口直下の前記絶縁膜を、その高さが前記第2導電層の配線よりも低くなるように形成した
ことを特徴とする半導体装置。 - 請求項1〜請求項5のいずれかに記載の半導体装置であって、
前記第1導電層で、前記第2導電層の配線のうち内部回路と電気的接続する配線と前記パッシベーション膜の開口により接続される部分は、絶縁性の保護膜で覆う
ことを特徴とする半導体装置。 - 請求項5記載の半導体装置の製造方法であって、
前記半導体基板の上層に前記絶縁膜を形成する工程と、
前記絶縁膜にビア孔を形成する工程と、
前記絶縁膜に配線溝を形成する工程と、
前記ビア孔にビアを形成する工程と、
前記配線溝に配線を形成する工程と、
前記配線のうち最上層の配線上にパッシベーション膜を形成する工程と、
前記パッシベーション膜に開口を形成する工程と、
外部と電気的接続をするための電極パッドとなる導電層を形成する工程とからなり、
前記パッシベーション膜に開口を形成する工程をエッチングにより実施し、前記パッシベーション膜の開口直下の前記絶縁膜の高さが前記第2導電層の配線よりも低くなるように、前記エッチング時に、前記パッシベーション膜の開口直下の前記絶縁膜および前記最上層の配線も同時にエッチングする
ことを特徴とする半導体装置の製造方法。
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JP2006137118A JP2007311432A (ja) | 2006-05-17 | 2006-05-17 | 半導体装置およびその製造方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0382129A (ja) * | 1989-08-25 | 1991-04-08 | Agency Of Ind Science & Technol | 半導体チップ |
JPH07122604A (ja) * | 1993-10-26 | 1995-05-12 | Nec Corp | 半導体集積回路装置 |
JP2004022869A (ja) * | 2002-06-18 | 2004-01-22 | Toshiba Corp | 半導体装置 |
JP2004047771A (ja) * | 2002-07-12 | 2004-02-12 | Denso Corp | 半導体装置、その製造方法、及びその検査方法 |
JP2004247522A (ja) * | 2003-02-14 | 2004-09-02 | Seiko Epson Corp | 半導体装置及びその製造方法 |
WO2006016918A1 (en) * | 2004-07-08 | 2006-02-16 | Spansion Llc | Bond pad structure for copper metallization having inceased reliability and method for fabricating same |
-
2006
- 2006-05-17 JP JP2006137118A patent/JP2007311432A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0382129A (ja) * | 1989-08-25 | 1991-04-08 | Agency Of Ind Science & Technol | 半導体チップ |
JPH07122604A (ja) * | 1993-10-26 | 1995-05-12 | Nec Corp | 半導体集積回路装置 |
JP2004022869A (ja) * | 2002-06-18 | 2004-01-22 | Toshiba Corp | 半導体装置 |
JP2004047771A (ja) * | 2002-07-12 | 2004-02-12 | Denso Corp | 半導体装置、その製造方法、及びその検査方法 |
JP2004247522A (ja) * | 2003-02-14 | 2004-09-02 | Seiko Epson Corp | 半導体装置及びその製造方法 |
WO2006016918A1 (en) * | 2004-07-08 | 2006-02-16 | Spansion Llc | Bond pad structure for copper metallization having inceased reliability and method for fabricating same |
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