JP2007311219A - Organic electroluminescent element - Google Patents
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Abstract
Description
本発明は、有機エレクトロルミネッセンス素子に関する。 The present invention relates to an organic electroluminescence element.
有機エレクトロルミネッセンス素子 （有機ＥＬ素子）は、陽極と陰極からなる一対の電極間に有機発光層を配置し、陽極（ホール注入電極）から注入された正孔と、陰極（電子注入電極）から注入された電子とを発光層で再結合させて発光させる素子である。
この発光層は有機物からなり、大気中の酸素や水分により劣化し易いため、無機膜（窒化シリコン膜）や高分子膜からなる保護膜で有機発光層を封止する技術が開発されている（特許文献１、２）。
図４は、有機発光層を保護膜で封止した従来の有機ＥＬ素子２００の構造の一例を示す。この図において、透明基板２上に陽極となる透明導電膜（ＩＴＯ膜）４が形成され、透明導電膜４上に画素となる有機発光層８０が形成されている。有機発光層８０の上面には陰極（Ａｌ層）１００が形成され、有機発光層８０と陰極１００の露出面（上面及び側面）を覆うように保護膜１２０が形成されている。
An organic electroluminescence device (organic EL device) has an organic light emitting layer disposed between a pair of electrodes consisting of an anode and a cathode, and holes injected from the anode (hole injection electrode) and the cathode (electron injection electrode). The device emits light by recombining the emitted electrons with the light emitting layer.
Since this light emitting layer is made of an organic material and easily deteriorates due to oxygen or moisture in the atmosphere, a technique for sealing the organic light emitting layer with a protective film made of an inorganic film (silicon nitride film) or a polymer film has been developed ( Patent Documents 1 and 2).
FIG. 4 shows an example of the structure of a conventional organic EL element 200 in which an organic light emitting layer is sealed with a protective film. In this figure, a transparent conductive film (ITO film) 4 serving as an anode is formed on a transparent substrate 2, and an organic light emitting layer 80 serving as a pixel is formed on the transparent conductive film 4. A cathode (Al layer) 100 is formed on the upper surface of the organic light emitting layer 80, and a protective film 120 is formed so as to cover the exposed surfaces (upper surface and side surfaces) of the organic light emitting layer 80 and the cathode 100.
又、発光層を含む素子を光硬化性樹脂等のバッファ層で被覆した上に、酸化物、窒化物、又は金属層等の透水性が低いバリア層を形成することにより、ダークスポット（画素の端部から成長する非発光部分（ダークフレーム））を抑制する技術が開発されている（特許文献３）。 In addition, by covering a device including a light emitting layer with a buffer layer such as a photocurable resin, and forming a barrier layer having low water permeability such as an oxide, nitride, or metal layer, dark spots (pixels) are formed. A technique for suppressing a non-light emitting portion (dark frame) that grows from an end has been developed (Patent Document 3).
しかしながら、通常、保護膜１２０は蒸着やスパッタによって成膜されるため、透明導電膜４と有機発光層８０の間の段差部分や、有機層８０と陰極１００の間の段差部分において、保護膜１２０の薄い部分１２０ａ、１２０ｂが生じやすい。そして、この場合には上記部分１２０ａ、１２０ｂから劣化物質が有機発光層８０に侵入し、画素の端部から非発光部分（ダークフレーム）が序々に成長し、発光特性が劣化するおそれがある。
又、上記特許文献３記載の技術の場合、バッファ層によって素子の段差を埋めることが記載されているが、依然としてダークスポットの抑制が充分でない場合があった。
However, since the protective film 120 is usually formed by vapor deposition or sputtering, the protective film 120 is formed at the step portion between the transparent conductive film 4 and the organic light emitting layer 80 or at the step portion between the organic layer 80 and the cathode 100. Thin portions 120a and 120b are likely to occur. In this case, a deteriorating substance enters the organic light emitting layer 80 from the portions 120a and 120b, and a non-light emitting portion (dark frame) gradually grows from the end portion of the pixel, which may deteriorate the light emission characteristics.
In the case of the technique described in Patent Document 3, it is described that the step of the element is filled with the buffer layer, but there are cases where the suppression of dark spots is still insufficient.
本発明は上記の課題を解決するためになされたものであり、発光特性の劣化が少ない有機エレクトロルミネッセンス素子の提供を目的とする。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide an organic electroluminescence element with little deterioration in light emission characteristics.
上記の目的を達成するために、本発明の有機エレクトロルミネッセンス素子は、透明基板上に形成される透明電極と、前記透明電極上に形成され画素領域を規定する開口を有する無機層と、前記開口及び該開口周縁部における前記無機層上面に形成される有機発光層と、前記有機発光層の上面及び側面を覆い前記透明電極の対極となる上部電極と、前記電極の上面及び側面を覆う保護層とを有する。
このような構成とすると、有機発光層の周縁と透明電極との間に絶縁性の無機層が介装される。そのため、透明電極と上部電極とを導通させずに、有機発光層の上面及び側面を上部電極で完全に封止することができ、有機発光層の劣化を防止することができる。さらに、上部電極を保護膜で覆うことにより有機発光層の劣化をさらに防止することができる。
In order to achieve the above object, an organic electroluminescence device of the present invention includes a transparent electrode formed on a transparent substrate, an inorganic layer formed on the transparent electrode and having an opening defining a pixel region, and the opening. And an organic light emitting layer formed on the upper surface of the inorganic layer at the periphery of the opening; an upper electrode that covers the upper surface and side surfaces of the organic light emitting layer and that serves as a counter electrode of the transparent electrode; and a protective layer that covers the upper surface and side surfaces of the electrode And have.
With such a configuration, an insulating inorganic layer is interposed between the periphery of the organic light emitting layer and the transparent electrode. Therefore, the upper surface and side surfaces of the organic light emitting layer can be completely sealed with the upper electrode without conducting the transparent electrode and the upper electrode, and deterioration of the organic light emitting layer can be prevented. Further, the organic light emitting layer can be further prevented from being deteriorated by covering the upper electrode with a protective film.
前記保護層は無機膜から成り、さらに、前記保護層の表面にポリマー層と第２の無機層とをこの順で形成してなることが好ましい。
このようにすると、ポリマー層が上部電極や保護層の成膜時に生じる厚みの薄い部分を埋め、保護層の表面凹凸を平滑化する。このため、ポリマー層の上層の第２の無機層を均一な厚みで形成することができるので、バリヤー性がさらに向上する。
Preferably, the protective layer is made of an inorganic film, and further, a polymer layer and a second inorganic layer are formed in this order on the surface of the protective layer.
If it does in this way, a polymer layer will fill in the thin part which arises at the time of film-forming of an upper electrode or a protective layer, and the surface unevenness | corrugation of a protective layer will be smoothed. For this reason, since the 2nd inorganic layer of the upper layer of a polymer layer can be formed with uniform thickness, barrier property further improves.
本発明によれば、発光特性の劣化が少ない有機エレクトロルミネッセンス素子が得られる。 According to the present invention, an organic electroluminescence element with little deterioration in light emission characteristics can be obtained.
以下、本発明の実施形態について、図１〜図３を参照して説明する。 Hereinafter, embodiments of the present invention will be described with reference to FIGS.
＜第１の実施形態＞
図１は、本発明の第１の実施形態に係る有機エレクトロルミネッセンス素子２０Ａの断面構造の一例を示す。この図において、透明基板２上に透明電極（透明導電膜；ＩＴＯ膜）４が形成されている。透明電極４上には無機層６が形成され、無機層６の一部が開口６ａをなし、透明電極４が表出している。
そして、無機層６の開口６ａと、開口周縁部６ｂにおける無機層６上面とに有機発光層８が形成されている。有機発光層８は、無機層６の周縁６ｂに重なる（オーバーラップする）ように形成されているため、有機発光層８の周縁はその上面８ａより高い隆起部８ｂになっている。無機層６の周縁に重なりを設けるのは有機発光層８の成膜位置の誤差等を考慮したものであり、有機発光層８の周縁に確実に無機層６を介装することにより、後述するように透明電極４と上部電極１０との導通を防止することができる。
有機発光層８は、陽極から注入された正孔と、陰極から注入された電子とを再結合させて発光させる層である。有機発光層８の画素（ピクセル）は無機層６の開口６ａで規定され、有機発光層８からの光は開口６ａから透明基板２の下面側に出射される。
<First Embodiment>
FIG. 1 shows an example of a cross-sectional structure of an organic electroluminescence element 20A according to the first embodiment of the present invention. In this figure, a transparent electrode (transparent conductive film; ITO film) 4 is formed on a transparent substrate 2. An inorganic layer 6 is formed on the transparent electrode 4, a part of the inorganic layer 6 forms an opening 6a, and the transparent electrode 4 is exposed.
And the organic light emitting layer 8 is formed in the opening 6a of the inorganic layer 6, and the inorganic layer 6 upper surface in the opening peripheral part 6b. Since the organic light emitting layer 8 is formed so as to overlap (overlap) the peripheral edge 6b of the inorganic layer 6, the peripheral edge of the organic light emitting layer 8 is a raised portion 8b higher than the upper surface 8a. The reason for providing an overlap at the periphery of the inorganic layer 6 is to consider an error in the film forming position of the organic light emitting layer 8 and the like, which will be described later by reliably interposing the inorganic layer 6 around the periphery of the organic light emitting layer 8. Thus, conduction between the transparent electrode 4 and the upper electrode 10 can be prevented.
The organic light emitting layer 8 is a layer that emits light by recombining holes injected from the anode and electrons injected from the cathode. A pixel of the organic light emitting layer 8 is defined by the opening 6 a of the inorganic layer 6, and light from the organic light emitting layer 8 is emitted from the opening 6 a to the lower surface side of the transparent substrate 2.
そして、有機発光層８の露出面（上面及び側面）を覆うようにして、透明電極４の対極となる上部電極（Ａｌ）１０が形成されている。上部電極１０は、有機発光層８の上面及び側端面を覆い、さらにその周囲の無機層６上に延びている。
さらに、上部電極１０の露出面（上面及び側面）を覆うようにして保護層１２が形成されている。保護層１２は上部電極１０の側端面を覆い、さらにその周囲の無機層６上に延びている。
And the upper electrode (Al) 10 used as the counter electrode of the transparent electrode 4 is formed so that the exposed surface (upper surface and side surface) of the organic light emitting layer 8 may be covered. The upper electrode 10 covers the upper surface and side end surfaces of the organic light emitting layer 8 and further extends onto the surrounding inorganic layer 6.
Further, a protective layer 12 is formed so as to cover the exposed surfaces (upper surface and side surfaces) of the upper electrode 10. The protective layer 12 covers the side end face of the upper electrode 10 and further extends on the surrounding inorganic layer 6.
透明基板２としては、例えばガラス、石英ガラス、合成樹脂（例えば、ポリエチレンテレフタレート、ポリカーボネート、ＰＭＭＡ（ポリメチルメタクリレート）等）を用いることができるが、特にこれらに限定されない。又、半透明の基板であってもよい。
透明電極４としては、例えば、金；ポリアニリン；ＩＴＯ（ＩｎＯ３−ＳｎＯ２）、ＳｎＯ：Ｓｂ等の酸化スズ、ＺｎＯ：Ａｌ等の酸化亜鉛からなる導電性透明膜を用いることができる。透明電極４の極性は陽極（ホール注入電極）でも陰極でもよいが、ＩＴＯ膜の場合は陽極として機能する。
無機層６としては、例えば無機酸化物又は無機窒化物の層を用いることができる。無機層６として具体的には、例えばＢ、Ａｌ，Ｓｉ、Ｇａ、Ｇｅ、Ｉｎ、Ｓｎ、Ｚｎ、Ｔｉ、Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｗ、Ｈｆ、Ｔａ、及びＣｅの群から選ばれる一種以上の酸化物若しくは窒化物、又はそれらの複数層を挙げることができる。無機層６は、これらの無機酸化物又は無機窒化物を、ＰＶＤ（物理的蒸着）法またはＣＶＤ（化学的蒸着）法で成膜することによって得られる。
As the transparent substrate 2, for example, glass, quartz glass, synthetic resin (for example, polyethylene terephthalate, polycarbonate, PMMA (polymethyl methacrylate), etc.) can be used, but is not particularly limited thereto. Further, it may be a translucent substrate.
As the transparent electrode 4, for example, a conductive transparent film made of gold; polyaniline; ITO (InO 3 —SnO 2 ), tin oxide such as SnO: Sb, or zinc oxide such as ZnO: Al can be used. The polarity of the transparent electrode 4 may be an anode (hole injection electrode) or a cathode, but in the case of an ITO film, it functions as an anode.
As the inorganic layer 6, for example, an inorganic oxide or inorganic nitride layer can be used. Specifically, the inorganic layer 6 is a kind selected from the group of, for example, B, Al, Si, Ga, Ge, In, Sn, Zn, Ti, Y, Zr, Nb, Mo, W, Hf, Ta, and Ce. The above oxides or nitrides, or multiple layers thereof can be given. The inorganic layer 6 is obtained by forming a film of these inorganic oxides or inorganic nitrides by a PVD (physical vapor deposition) method or a CVD (chemical vapor deposition) method.
有機発光層８は、単層構造でも多層構造でもよく、有機ＥＬ素子に用いる従来公知の有機発光層を用いることができる。多層構造として、例えば、発光層とホール輸送層の二層構造、発光層と電子輸送層の二層構造、電子輸送層と発光層とホール輸送層の三層構造のものが挙げられる。更には、電子注入層と電子輸送層と発光層とホール輸送層とホール注入層の五層構造のものも挙げられる。
有機発光層８の組成も有機ＥＬ素子に用いる従来公知の組成（例えば低分子蛍光色素、有機金属錯体、高分子材料等の有機化合物）を用いることができる。有機発光層８として具体的には、例えば８−ハイドロキシキノリンアルミニウム（Ａｌｑ３）が挙げられる。有機発光層８を多層とする場合、例えばホール輸送層としてはトリフェニルアミン誘導体を、発光層および電子輸送層としてＡｌｑ３を用いることができる。
The organic light emitting layer 8 may have a single layer structure or a multilayer structure, and a conventionally known organic light emitting layer used for an organic EL element can be used. Examples of the multilayer structure include a two-layer structure of a light-emitting layer and a hole transport layer, a two-layer structure of a light-emitting layer and an electron transport layer, and a three-layer structure of an electron transport layer, a light-emitting layer, and a hole transport layer. Furthermore, the thing of the five-layer structure of an electron injection layer, an electron carrying layer, a light emitting layer, a hole transport layer, and a hole injection layer is also mentioned.
The composition of the organic light emitting layer 8 can also be a conventionally known composition used for an organic EL element (for example, an organic compound such as a low molecular fluorescent dye, an organometallic complex, or a polymer material). Specific examples of the organic light emitting layer 8 include 8-hydroxyquinoline aluminum (Alq 3 ). When the organic light emitting layer 8 has a multilayer structure, for example, a triphenylamine derivative can be used as the hole transport layer, and Alq 3 can be used as the light emitting layer and the electron transport layer.
上部電極１０としては、例えばアルミニウム、マグネシウム、Ａｌ−Ｌｉ合金、Ａｌ−Ｍｇ合金、Ａｌ−Ｎｄ合金、Ａｌ−Ｍｇ合金等の金属や合金の膜を用いることができる。透明電極４を陽極とする場合、対極は陰極となるので、上部電極１０として仕事関数の小さい金属又は合金を用いることが好ましい。
保護層１２としては、有機ＥＬ素子に用いる従来公知のもの（例えば、窒化シリコン膜等の無機膜や高分子膜）を用いることができる。保護層１２のみを形成してもよいが、以下のように保護層１２上にさらに別の層を形成すると、バリヤー性が向上するので好ましい。
As the upper electrode 10, for example, a metal or alloy film such as aluminum, magnesium, Al—Li alloy, Al—Mg alloy, Al—Nd alloy, or Al—Mg alloy can be used. When the transparent electrode 4 is used as an anode, the counter electrode serves as a cathode. Therefore, it is preferable to use a metal or alloy having a low work function as the upper electrode 10.
As the protective layer 12, a conventionally known one used for an organic EL element (for example, an inorganic film such as a silicon nitride film or a polymer film) can be used. Although only the protective layer 12 may be formed, it is preferable to form another layer on the protective layer 12 as described below because the barrier property is improved.
第１の実施形態ではバリヤー性を向上させるため、保護層１２が無機膜から成り、さらに保護層１２の表面にポリマー層１４と第２の無機層１６とがこの順で形成されている。保護層１２は、上部電極１０の上面及び側端面を覆い、さらにその周囲の無機層６上に延びている。又、有機ＥＬ素子の最端部となる画素端部（ドライバＩＣと繋がる四周部の画素端部）において、ポリマー層１４は保護層１２の上面及び側面を覆っているが、ポリマー層１４の周縁は保護層１２の周縁より内側に位置している。ポリマー層１４は、上部電極１０や保護層１２の成膜時に生じる厚みの薄い部分を埋め、保護層１２の表面凹凸を平滑化する。このため、ポリマー層１４の上層の第２の無機層１６を均一な厚みで形成することができるので、バリヤー性がさらに向上する。
第２の無機層１６はポリマー層１４の露出面（上面及び側面）を覆い、さらに第２の無機層１６の周縁は無機層１２の周縁と同じ位置まで延びている。
保護層１２、ポリマー層１４、及び第２の無機層１６の構造として、上記構成の代わりに、保護層１２の無機層６上の延設部分を短くし、保護層１２の外周縁を完全に覆うようにポリマー層１４を形成し、さらにポリマー層１４の外周縁を完全に覆うように第２の無機層１６を形成してもよい。この場合、保護層１２、ポリマー層１４、及び第２の無機層１６の外周縁はいずれも無機層６上面に接触するように構成され、各層はシャドーマスクによりその形成範囲（外周縁）を規定することにより成膜することができる。
In the first embodiment, in order to improve barrier properties, the protective layer 12 is made of an inorganic film, and the polymer layer 14 and the second inorganic layer 16 are formed on the surface of the protective layer 12 in this order. The protective layer 12 covers the upper surface and side end surfaces of the upper electrode 10 and further extends onto the surrounding inorganic layer 6. In addition, the polymer layer 14 covers the upper surface and side surfaces of the protective layer 12 at the pixel end portion (four end pixel end portions connected to the driver IC) which is the outermost end portion of the organic EL element. Is located inside the periphery of the protective layer 12. The polymer layer 14 fills a thin portion generated when the upper electrode 10 and the protective layer 12 are formed, and smoothes the surface unevenness of the protective layer 12. For this reason, since the second inorganic layer 16 on the upper layer of the polymer layer 14 can be formed with a uniform thickness, the barrier property is further improved.
The second inorganic layer 16 covers the exposed surface (upper surface and side surface) of the polymer layer 14, and the periphery of the second inorganic layer 16 extends to the same position as the periphery of the inorganic layer 12.
As a structure of the protective layer 12, the polymer layer 14, and the second inorganic layer 16, instead of the above configuration, the extended portion of the protective layer 12 on the inorganic layer 6 is shortened so that the outer peripheral edge of the protective layer 12 is completely The polymer layer 14 may be formed so as to cover it, and the second inorganic layer 16 may be formed so as to completely cover the outer periphery of the polymer layer 14. In this case, the outer peripheral edges of the protective layer 12, the polymer layer 14, and the second inorganic layer 16 are all in contact with the upper surface of the inorganic layer 6, and each layer defines its formation range (outer peripheral edge) by a shadow mask. By doing so, a film can be formed.
保護層１２として用いる無機膜としては、Ａｌ２Ｏ３、Ｓｉ３Ｎ４、ＳｉＯ２、ＳｉＯｘＮｙ等（ｘ、ｙは所定の組成比である）を用いることができる。 As the inorganic film used as the protective layer 12, Al 2 O 3 , Si 3 N 4 , SiO 2 , SiO x N y, etc. (x and y are predetermined composition ratios) can be used.
ポリマー層１４は、例えば所定のモノマー又はオリゴマーを蒸発させて被着物に蒸着した後、重合硬化させて成膜することができる。重合方法としては、モノマーの熱分解温度に応じて熱重合、紫外線重合を適宜用いることができる。
モノマーとしては、例えば米国特許４４９９５２０号明細書に記載のモノマーを用いることができる。特に、分子量３００程度のアクリル基又はメタクリル基を有する単一又は複数の組成の液状モノマーであって、モノアクリレート、ジアクリレート、又はメタクリレートを包含するモノマーが、化学的安定性の点、及び重合反応速度を制御し易い点から好ましい。このようなモノマーとして、トリプロピレングリコールジアクリレート、ポリエチレングリコールジアクリレートが好ましく、これらの単一又は複数種を混合して用いることもできる。
The polymer layer 14 can be formed, for example, by evaporating a predetermined monomer or oligomer and evaporating it on an adherend, followed by polymerization and curing. As the polymerization method, thermal polymerization or ultraviolet polymerization can be appropriately used depending on the thermal decomposition temperature of the monomer.
As the monomer, for example, monomers described in US Pat. No. 4,499,520 can be used. In particular, a liquid monomer having an acrylic group or a methacryl group having a molecular weight of about 300 and having a single composition or a plurality of compositions, which includes a monoacrylate, a diacrylate, or a methacrylate, has a chemical stability point and a polymerization reaction. This is preferable because the speed can be easily controlled. As such a monomer, tripropylene glycol diacrylate and polyethylene glycol diacrylate are preferable, and these single or plural kinds may be used in combination.
上記したモノマーを用いる場合、モノマー蒸発時の加熱温度を５０〜３００℃とすることが好ましく、特に１００〜２５０℃とすると、モノマーの蒸気圧が高くなり、かつモノマーの熱分解を防止できるので好ましい。
上記したモノマーを用いる場合、光重合開始剤を添加することが好ましい。光重合開始剤としては特に制限されないが、例えばベンゾフェノンや、ラジカル型光重合開始剤（例えばチバ・スペシャリティ・ケミカル社製の商品名DAROCUR（登録商標）、IRGACURE（登録商標））を好適に用いることができる。光重合開始剤はモノマーに対して0.01〜10質量％配合することができる。
上記したモノマーを用いる場合、モノマー膜を蒸着した後、波長200〜400ｎｍ程度の紫外線により重合硬化することができる。
When using the above-mentioned monomer, it is preferable to set the heating temperature at the time of monomer evaporation to 50 to 300 ° C., and particularly preferably 100 to 250 ° C., because the vapor pressure of the monomer becomes high and thermal decomposition of the monomer can be prevented. .
When using the monomer described above, it is preferable to add a photopolymerization initiator. Although it does not restrict | limit especially as a photoinitiator, For example, a benzophenone and radical type photoinitiators (For example, brand name DAROCUR (trademark), IRGACURE (trademark) by Ciba Specialty Chemicals company) should be used suitably Can do. The photopolymerization initiator can be blended in an amount of 0.01 to 10% by weight based on the monomer.
In the case of using the above-described monomer, after the monomer film is deposited, it can be polymerized and cured by ultraviolet rays having a wavelength of about 200 to 400 nm.
第２の無機層１６としては、Ａｌ２Ｏ３、Ｓｉ３Ｎ４、ＳｉＯ２、ＳｉＯｘＮｙ等（ｘ、ｙは所定の組成比である）を用いることができる。 As the second inorganic layer 16, Al 2 O 3 , Si 3 N 4 , SiO 2 , SiO x N y or the like (x and y are predetermined composition ratios) can be used.
＜作用＞
本発明によれば、有機発光層の周縁と透明電極との間に絶縁性の無機層が介装される。そのため、透明電極と上部電極とを導通させずに、有機発光層の上面及び側面を上部電極で完全に封止することができ、有機発光層の劣化を防止することができる。さらに、上部電極を保護膜で覆うことにより有機発光層の劣化をさらに防止することができる。
なお、第２の無機層１６の成膜方法としてプラズマ法を用いた場合、ポリマー層１４がプラズマによって分解して汚染物質として遊離し、皮膜の薄い部分から有機発光層に到達するので、有機発光層の劣化が促進される。従って、このような場合に、本発明がさらに有効となる。
<Action>
According to the present invention, the insulating inorganic layer is interposed between the periphery of the organic light emitting layer and the transparent electrode. Therefore, the upper surface and side surfaces of the organic light emitting layer can be completely sealed with the upper electrode without conducting the transparent electrode and the upper electrode, and deterioration of the organic light emitting layer can be prevented. Further, the organic light emitting layer can be further prevented from being deteriorated by covering the upper electrode with a protective film.
In addition, when the plasma method is used as the film formation method of the second inorganic layer 16, the polymer layer 14 is decomposed by the plasma and released as a contaminant, and reaches the organic light emitting layer from a thin portion of the film. Deterioration of the layer is promoted. Therefore, the present invention becomes more effective in such a case.
＜第２の実施形態＞
図２は、本発明の第２の実施形態に係るパッシブマトリクス型の有機エレクトロルミネッセンス素子２０Ｂの平面構造の一例を示す。この図において、第１の実施形態と同一の構成部分については同一の符号を付して説明を省略する。
<Second Embodiment>
FIG. 2 shows an example of a planar structure of a passive matrix organic electroluminescence element 20B according to the second embodiment of the present invention. In this figure, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.
この図において、透明基板２上に横方向に短冊状に延びる２個の透明電極４がそれぞれ離間して形成されている。一方、透明電極４の上面には、透明電極４の長手方向と直角（縦方向Ｌ）に短冊状に延びる複数の無機層６がそれぞれ離間して形成され、無機層６の離間部分が開口６ａをなしている。矩形状の有機発光層８は、開口６ａから表出した透明電極４を覆い、さらに有機発光層８の横の辺は透明電極４の長辺より外側に延び、有機発光層８の縦の辺は無機層６の周縁（長辺）６ｂ上に延びて周縁６ｂとオーバーラップしている。
有機発光層８の上面には、縦方向Ｌに短冊状に延びる上部電極１０が形成され、各上部電極１０の長辺は有機発光層８の縦の辺より外側に延びて有機発光層８の縦の辺の側端面を覆い、さらにその周囲の無機層６上に延びている。各上部電極１０は無機層６上でそれぞれ離間している。
さらに、図示しない保護層１２、ポリマー層１４、及び第２の無機層１６が基板２のほぼ全面に渡ってこの順で形成されている。
In this figure, two transparent electrodes 4 extending in a strip shape in the horizontal direction are formed on a transparent substrate 2 so as to be separated from each other. On the other hand, a plurality of inorganic layers 6 extending in a strip shape perpendicular to the longitudinal direction of the transparent electrode 4 (longitudinal direction L) are formed on the upper surface of the transparent electrode 4 so as to be separated from each other. I am doing. The rectangular organic light emitting layer 8 covers the transparent electrode 4 exposed from the opening 6 a, and the horizontal side of the organic light emitting layer 8 extends outward from the long side of the transparent electrode 4, and the vertical side of the organic light emitting layer 8 Extends on the peripheral edge (long side) 6b of the inorganic layer 6 and overlaps the peripheral edge 6b.
An upper electrode 10 extending in a strip shape in the longitudinal direction L is formed on the upper surface of the organic light emitting layer 8, and the long side of each upper electrode 10 extends outward from the vertical side of the organic light emitting layer 8 to form the organic light emitting layer 8. It covers the side end face of the vertical side and further extends onto the surrounding inorganic layer 6. The upper electrodes 10 are separated from each other on the inorganic layer 6.
Further, the protective layer 12, the polymer layer 14, and the second inorganic layer 16 (not shown) are formed in this order over almost the entire surface of the substrate 2.
ここで、画素（ピクセル）の縦の辺はその下側に位置する無機層６の周縁６ｂで規定され、画素の横の辺は有機発光層８の周縁（横の辺）で規定され、図３のクロスハッチング部分が画素領域となっている。各上部電極１０は垂直駆動回路１８に接続され、各透明電極４は水平駆動回路１９に接続され、各回路を駆動することにより、所定位置の画素（ピクセル）を発光するようになっている。 Here, the vertical side of the pixel is defined by the peripheral edge 6b of the inorganic layer 6 positioned below the pixel, and the horizontal side of the pixel is defined by the peripheral edge (horizontal side) of the organic light emitting layer 8. The cross-hatched portion 3 is a pixel region. Each upper electrode 10 is connected to a vertical drive circuit 18, and each transparent electrode 4 is connected to a horizontal drive circuit 19. By driving each circuit, a pixel at a predetermined position is emitted.
図３は、図２のIII−III線に沿う断面図である。第１の実施形態の場合と同様、有機発光層８の露出面が上部電極１０で完全に封止されていることがわかる。ここで、図３の領域Ｃにおいてポリマー層１４は各有機ＥＬ素子の画素ごとに分離して形成され、第２の無機層１６が領域Ｃに表出した保護層１２の上面を覆っている。ポリマー層１４をこのように成膜する場合、シャドウマスクにより画素ごとにポリマー層１４の外周縁を規定する必要がある。一方、ポリマー層１４を各有機ＥＬ素子の画素ごとに分離して形成せず、全体に一様にポリマー層１４を成膜してもよい。又、図３の実施形態の場合、保護層１２は上部電極１０及び無機層６表面全体に一様に形成されているが、領域Ｃにおいて保護層１２を各有機ＥＬ素子の画素ごとに分離して形成してもよい。
なお、図２のY−Y線（図２の縦方向L）に沿う断面から見たとき、無機層６は存在せず、画素領域は透明電極４の周縁で規定されている。これは、この方向では透明電極４がそれぞれ離間し、有機発光層８の周縁の下側に透明電極４が存在しないためである。この場合、透明電極４と上部電極１０が導通する問題は生じないので、無機層６を形成する必要がない。
このようなことから、有機発光層８の周縁の下側に透明電極４が存在する場合（例えば、図２のIII−III線に沿う方向）に、本発明が適用される。但し、図２のY−Y線に沿う方向においても、基板２上に無機層６を形成させること自体は構わない。この場合、無機層６を基板２の全面に形成させ、画素領域となる部分に矩形状の窓を設ければよい。
3 is a cross-sectional view taken along line III-III in FIG. As in the case of the first embodiment, it can be seen that the exposed surface of the organic light emitting layer 8 is completely sealed by the upper electrode 10. Here, in the region C of FIG. 3, the polymer layer 14 is formed separately for each pixel of each organic EL element, and the second inorganic layer 16 covers the upper surface of the protective layer 12 exposed in the region C. When the polymer layer 14 is formed in this way, it is necessary to define the outer periphery of the polymer layer 14 for each pixel by a shadow mask. On the other hand, the polymer layer 14 may be formed uniformly on the whole without forming the polymer layer 14 separately for each pixel of each organic EL element. In the embodiment of FIG. 3, the protective layer 12 is uniformly formed on the entire surface of the upper electrode 10 and the inorganic layer 6, but in the region C, the protective layer 12 is separated for each pixel of each organic EL element. May be formed.
Note that the inorganic layer 6 does not exist and the pixel region is defined by the periphery of the transparent electrode 4 when viewed from a cross section along the YY line in FIG. 2 (vertical direction L in FIG. 2). This is because the transparent electrodes 4 are separated from each other in this direction, and there is no transparent electrode 4 below the periphery of the organic light emitting layer 8. In this case, there is no problem of electrical conduction between the transparent electrode 4 and the upper electrode 10, so there is no need to form the inorganic layer 6.
For this reason, the present invention is applied to the case where the transparent electrode 4 is present below the periphery of the organic light emitting layer 8 (for example, the direction along line III-III in FIG. 2). However, it is permissible to form the inorganic layer 6 on the substrate 2 also in the direction along the YY line in FIG. In this case, the inorganic layer 6 may be formed on the entire surface of the substrate 2 and a rectangular window may be provided in a portion that becomes a pixel region.
＜有機エレクトロルミネッセンス素子の製造＞
本発明の有機エレクトロルミネッセンス素子は、例えば真空蒸着装置を用いて以下のように製造することができる。まず、基板２上にマスクを用いて透明電極４を短冊状に成膜する。次に、透明電極４の長手方向と垂直な方向に、マスクを用いて無機層６を短冊状に成膜する。続いて、マスクを用いて所定位置に矩形状の有機発光層８を成膜し、さらにマスクを用いて短冊状の上部電極１０を成膜する。その後、保護層１２、ポリマー層１４、及び第２の無機層１６をこの順で基板２のほぼ全面に成膜する。
なお、上記したように、ポリマー層１４はモノマーを蒸着した後、紫外線等により重合硬化して形成することができる。又、ポリマー層１４及び第２の無機層１６をこの順で複数層重ね合わせてもよい。
<Manufacture of organic electroluminescence element>
The organic electroluminescent element of this invention can be manufactured as follows, for example using a vacuum evaporation system. First, the transparent electrode 4 is formed in a strip shape on the substrate 2 using a mask. Next, the inorganic layer 6 is formed into a strip shape using a mask in a direction perpendicular to the longitudinal direction of the transparent electrode 4. Subsequently, a rectangular organic light emitting layer 8 is formed at a predetermined position using a mask, and a strip-shaped upper electrode 10 is further formed using a mask. Thereafter, the protective layer 12, the polymer layer 14, and the second inorganic layer 16 are formed on almost the entire surface of the substrate 2 in this order.
As described above, the polymer layer 14 can be formed by depositing a monomer and then polymerizing and curing with ultraviolet rays or the like. Further, a plurality of polymer layers 14 and second inorganic layers 16 may be stacked in this order.
本発明は、パッシブマトリクス型の有機エレクトロルミネッセンス素子に限定されることはなく、本発明の趣旨を逸脱しない限り、アクティブマトリクス型の有機エレクトロルミネッセンス素子や他の方式の有機エレクトロルミネッセンス素子に制限なく本発明を適用することが可能である。 The present invention is not limited to passive matrix organic electroluminescence elements, and is not limited to active matrix organic electroluminescence elements or other types of organic electroluminescence elements without departing from the spirit of the present invention. The invention can be applied.
２ 透明基板
４ 透明電極
６ 無機層
６ａ 開口
６ｂ 開口周縁部
８ 有機発光層
１０ 上部電極
１２ 保護層
２０Ａ、２０Ｂ 有機エレクトロルミネッセンス素子
DESCRIPTION OF SYMBOLS 2 Transparent substrate 4 Transparent electrode 6 Inorganic layer 6a Opening 6b Opening peripheral part 8 Organic light emitting layer 10 Upper electrode 12 Protective layer 20A, 20B Organic electroluminescent element
Claims (2)
を有する有機エレクトロルミネッセンス素子。 A transparent electrode formed on a transparent substrate; an inorganic layer formed on the transparent electrode having an opening defining a pixel region; and an organic light emitting layer formed on the opening and the inorganic layer on the periphery of the opening; An organic electroluminescence device comprising: an upper electrode that covers an upper surface and a side surface of the organic light emitting layer and serves as a counter electrode of the transparent electrode; and a protective layer that covers the upper surface and the side surface of the electrode.
The organic electroluminescence device according to claim 1, wherein the protective layer is made of an inorganic film, and further a polymer layer and a second inorganic layer are formed in this order on the surface of the protective layer.
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| JP2006139789A JP2007311219A (en) | 2006-05-19 | 2006-05-19 | Organic electroluminescent element |
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|---|---|---|---|
| JP2006139789A JP2007311219A (en) | 2006-05-19 | 2006-05-19 | Organic electroluminescent element |
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| JP2007311219A true JP2007311219A (en) | 2007-11-29 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003797A (en) * | 2008-06-19 | 2010-01-07 | Rohm Co Ltd | Organic el element, and manufacturing method of the organic el element |
| WO2013073302A1 (en) * | 2011-11-14 | 2013-05-23 | コニカミノルタ株式会社 | Organic electroluminescent element and planar light-emitting unit |
| WO2014196137A1 (en) * | 2013-06-07 | 2014-12-11 | 株式会社アルバック | Element structure and method for producing same |
| JP2019532326A (en) * | 2016-12-09 | 2019-11-07 | エルジー・ケム・リミテッド | Sealant composition |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004127606A (en) * | 2002-09-30 | 2004-04-22 | Seiko Epson Corp | Electrooptical device and electronic apparatus |
| JP2006004650A (en) * | 2004-06-15 | 2006-01-05 | Toshiba Matsushita Display Technology Co Ltd | Display element and optical device |
-
2006
- 2006-05-19 JP JP2006139789A patent/JP2007311219A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004127606A (en) * | 2002-09-30 | 2004-04-22 | Seiko Epson Corp | Electrooptical device and electronic apparatus |
| JP2006004650A (en) * | 2004-06-15 | 2006-01-05 | Toshiba Matsushita Display Technology Co Ltd | Display element and optical device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003797A (en) * | 2008-06-19 | 2010-01-07 | Rohm Co Ltd | Organic el element, and manufacturing method of the organic el element |
| WO2013073302A1 (en) * | 2011-11-14 | 2013-05-23 | コニカミノルタ株式会社 | Organic electroluminescent element and planar light-emitting unit |
| JPWO2013073302A1 (en) * | 2011-11-14 | 2015-04-02 | コニカミノルタ株式会社 | Organic electroluminescence device and planar light emitter |
| US9236583B2 (en) | 2011-11-14 | 2016-01-12 | Konica Minolta, Inc. | Organic electroluminescent element and planar light-emitting unit |
| WO2014196137A1 (en) * | 2013-06-07 | 2014-12-11 | 株式会社アルバック | Element structure and method for producing same |
| CN105284186A (en) * | 2013-06-07 | 2016-01-27 | 株式会社爱发科 | Element structure and method for producing same |
| JPWO2014196137A1 (en) * | 2013-06-07 | 2017-02-23 | 株式会社アルバック | Element structure and manufacturing method thereof |
| US10276827B2 (en) | 2013-06-07 | 2019-04-30 | Ulvac, Inc. | Device structure and method of producing the same |
| JP2019532326A (en) * | 2016-12-09 | 2019-11-07 | エルジー・ケム・リミテッド | Sealant composition |
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