JP2007294936A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007294936A5 JP2007294936A5 JP2007087164A JP2007087164A JP2007294936A5 JP 2007294936 A5 JP2007294936 A5 JP 2007294936A5 JP 2007087164 A JP2007087164 A JP 2007087164A JP 2007087164 A JP2007087164 A JP 2007087164A JP 2007294936 A5 JP2007294936 A5 JP 2007294936A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor layer
- forming
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 32
- 239000012535 impurity Substances 0.000 claims 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 238000009832 plasma treatment Methods 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007087164A JP5094179B2 (ja) | 2006-03-31 | 2007-03-29 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006101076 | 2006-03-31 | ||
| JP2006101076 | 2006-03-31 | ||
| JP2007087164A JP5094179B2 (ja) | 2006-03-31 | 2007-03-29 | 不揮発性半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007294936A JP2007294936A (ja) | 2007-11-08 |
| JP2007294936A5 true JP2007294936A5 (enrdf_load_stackoverflow) | 2010-03-25 |
| JP5094179B2 JP5094179B2 (ja) | 2012-12-12 |
Family
ID=38765184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007087164A Expired - Fee Related JP5094179B2 (ja) | 2006-03-31 | 2007-03-29 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5094179B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010135556A (ja) * | 2008-12-04 | 2010-06-17 | Sharp Corp | 半導体記憶装置 |
| US20220378069A1 (en) * | 2021-05-26 | 2022-12-01 | A-Sha Republic Inc. | Quick-cooking noodle structure |
| US20220378068A1 (en) * | 2021-05-26 | 2022-12-01 | A-Sha Republic Inc. | Quick-cooking noodle structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4761646B2 (ja) * | 2000-04-27 | 2011-08-31 | 株式会社半導体エネルギー研究所 | 不揮発性メモリ |
| JP2004040064A (ja) * | 2002-07-01 | 2004-02-05 | Yutaka Hayashi | 不揮発性メモリとその製造方法 |
| JP2004047614A (ja) * | 2002-07-10 | 2004-02-12 | Innotech Corp | トランジスタとそれを用いた半導体メモリ、およびトランジスタの製造方法 |
| JP2004087770A (ja) * | 2002-08-27 | 2004-03-18 | Sony Corp | 不揮発性半導体メモリ装置およびその電荷注入方法 |
-
2007
- 2007-03-29 JP JP2007087164A patent/JP5094179B2/ja not_active Expired - Fee Related